CN102738121A - Inspection mark for overlay deviation and preparation method thereof - Google Patents
Inspection mark for overlay deviation and preparation method thereof Download PDFInfo
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- CN102738121A CN102738121A CN2011100874897A CN201110087489A CN102738121A CN 102738121 A CN102738121 A CN 102738121A CN 2011100874897 A CN2011100874897 A CN 2011100874897A CN 201110087489 A CN201110087489 A CN 201110087489A CN 102738121 A CN102738121 A CN 102738121A
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- 238000007689 inspection Methods 0.000 title abstract description 5
- 238000002360 preparation method Methods 0.000 title description 5
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Abstract
The invention provides an inspection mark (300) for overlay deviation, comprising a first substructure (301), a second substructure (302) and a third substructure (303), wherein the first substructure is formed in a first material layer, and is composed of four strip-shaped marks in a square shape, the second substructure is formed in the first material layer, and is positioned inside the first substructure, and the third substructure is formed in a second material layer which is on the first material layer, and is composed of four strip-shaped marks in a square shape. Seen planarly, the third substructure is nested in the first substructure to form a homocentric square shape. The first, second and third substructures are not overlapped with each other. According to the invention, deformation deviations in heat treatment processes such as an annealing processing can be monitored, and various position deviations caused by exposure errors can be inspected.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and in particular to a kind of alignment (overlay) deviation check mark and preparation method thereof.
Background technology
Along with semiconductor technology is followed Moore's Law continuation development, (CD) is more and more littler for critical size, and the integrated level of chip is increasingly high, thereby also more and more stricter to the requirement of semiconductor fabrication process.Therefore, must in technical process, reduce the error of each processing step as much as possible, to reduce the component failure that causes because of error.
In semiconductor fabrication, photoetching process is as the core technology of each Age of Technology and constantly development.In standard CMOS process, need use photoetching process tens of times, and influence the factor of photoetching process error, except the resolution of mask aligner, also have the accuracy of overlay alignment.
Please, wherein show the vertical view of the wafer 100 that is in the manufacture process with reference to Fig. 1.As shown in Figure 1, wafer 100 comprises a plurality of semiconductor elements 101 and the scribe line 102 of separating a plurality of semiconductor elements 101.In order to reach accurate alignment result; Usually can in scribe line 102, make one or more groups test pattern 103; As being used for the mark (be designated hereinafter simply as " alignment deviation check mark ") of technologist, with the monitoring process quality in the alignment deviation of manufacture process inspection front and back twice or multiple tracks photoetching process.
Below, will explain the alignment deviation check mark that adopts usually in the prior art with reference to accompanying drawing 2A-2B.
Please, wherein show the vertical view of the alignment deviation check mark 200 of available technology adopting with reference to Fig. 2 A.Shown in Fig. 2 A, see that from the plane alignment deviation check mark 200 comprises first minor structure 201 and second minor structure 202 that is distributed in the first minor structure outer peripheral areas.First minor structure 201 is formed in the preceding material layer and by four strip marks that surround " mouth " font to be formed; Wherein two strip marks are used to check the alignment deviation of vertical direction, and two other strip mark is used to check the alignment deviation of horizontal direction.Similarly; Second minor structure 202 is formed in the present material layer and by four strip marks that surround " mouth " font to be formed; Wherein two strip marks are used to check the alignment deviation of vertical direction, and two other strip mark is used to check the alignment deviation of horizontal direction.It shown in Fig. 2 B the schematic cross sectional view of alignment deviation check mark 200.Shown in Fig. 2 B, first minor structure 201 is formed groove-like, and second minor structure 202 is formed convex.
Generally, four kinds of pattern position deviations in actual manufacture process, may occur: translation, breathing, rotation and orthogonality change.Record sketch map and detailed description at " microelectronic manufacturing technology outline " (tight sharp people etc. write, and publishing house of Tsing-Hua University publishes) book 117-118 page or leaf to these four kinds of position deviations.
On the other hand; Subsequent heat treatment technology (for example; Annealing in process after source/drain region ion injects) can cause the preceding material layer to deform; Thereby cause first minor structure of the alignment deviation check mark in the preceding material layer to deform, and then the judgement of alignment deviation formation reason is caused interference.Therefore, be desirably in the manufacture process and monitor the material layer distortion that heat treatment causes, thereby it is control effectively through observing the alignment deviation check mark.
Yet; Regrettably; The technologist can not be through observing that conventional alignment deviation check mark 200 shown in Fig. 2 A-2B is distinguished because distortion that subsequent heat treatment technology causes and (for example, the coordinate system of the placement location of astigmatism, wafer and sheet platform not parallel etc.) and the misalignment (misalignment) that causes because exposure error.
Annealing in process can cause the preceding material layer to produce distortion, and such torsional deformation can make that the semiconductor device noise characteristic of final formation is relatively poor.And according to present employed alignment deviation check mark, can't torsional deformation that cause owing to annealing in process and the misalignment that causes owing to exposure technology be distinguished again.Therefore, need a kind of improved alignment deviation check mark and preparation method thereof, to address the above problem.
Summary of the invention
For the defective that overcomes the alignment deviation check mark that uses in the prior art, can't torsional deformation that cause owing to annealing in process and the misalignment that causes owing to exposure technology be distinguished so that control craft precision better, the present invention has been proposed.
According to an aspect of the present invention, a kind of alignment deviation check mark is provided, comprises: first minor structure, said first minor structure is formed in first material layer, and is made up of four strip marks that surround " mouth " font; Second minor structure, said second minor structure is formed in said first material layer, and it is inboard to be positioned at said first minor structure; With the 3rd minor structure; Said the 3rd minor structure is formed on second material layer that is arranged on said first material layer and is made up of four strip marks that surround " mouth " font; And see from the plane; " return " font with the nested formation of said first minor structure, and said first, second do not overlap each other with the 3rd minor structure.
Preferably, said second minor structure can be made up of square shape mark.
Preferably, see that said the 3rd minor structure can be between said first minor structure and said second minor structure from the plane.
Preferably, see that said first minor structure can be between said second minor structure and said the 3rd minor structure from the plane.
Preferably, said second minor structure can be made up of four strip marks that surround " mouth " font.
Preferably, see that said second minor structure can be between said first minor structure and said the 3rd minor structure from the plane.
Preferably, see that said the 3rd minor structure can be between said first minor structure and said second minor structure from the plane.
Preferably, see that said first minor structure can be between said first minor structure and said second minor structure from the plane.
Preferably, see that said first, second can be formed groove-like or convex with the 3rd minor structure from section.
According to a further aspect in the invention, a kind of method that is used to make above-mentioned alignment deviation check mark is provided, said alignment deviation check mark comprises first minor structure, second minor structure and the 3rd minor structure, and said method comprises: first material layer is provided; Said first material layer of etching, with the first minor structure pattern on first mask and the second minor structure design transfer to said first material layer, thereby in said first material layer, form said first minor structure and said second minor structure; On said first material layer, form second material layer; And said second material layer of etching, with the 3rd minor structure design transfer on second mask to said second material layer, thereby in said second material layer, form said the 3rd minor structure.
Can check and distinguish because distortion that annealing in process causes and because the misalignment that exposure error causes according to alignment deviation check mark of the present invention.Therefore, through the present invention, can check again simultaneously because all places deviation that exposure error causes monitoring such as the distortion deviation that produces in the such heat treatment process of annealing in process.
Description of drawings
Attached drawings of the present invention is used to understand the present invention at this as a part of the present invention.The sketch map of embodiments of the invention has been shown in the accompanying drawing, has been used for explaining principle of the present invention.
In the accompanying drawing:
Fig. 1 shows the vertical view of the wafer 100 that is in the manufacture process;
Fig. 2 A and 2B show the vertical view and the profile of the alignment deviation check mark 200 of available technology adopting respectively;
Fig. 3 A and 3B show the vertical view and the profile of alignment deviation check mark 300 according to an exemplary embodiment of the present invention respectively;
Fig. 4 A-4F shows the schematic cross sectional view according to each processing step in the process of prior art making alignment deviation check mark 300;
Fig. 5 shows the flow chart of the method that is used to make the alignment deviation check mark according to an exemplary embodiment of the present invention;
Fig. 6 shows alignment deviation check mark according to an exemplary embodiment of the present invention, is used to explain beneficial effect of the present invention; And
Fig. 7 A-7B shows various variation of the present invention.
Should be noted in the discussion above that these figure are intended to illustrate the general characteristic according to employed method, structure and/or material in the certain exemplary embodiments of the present invention, and the following written description that provides is replenished.Yet; These figure draw in proportion; Thereby possibly accurately not reflect precision architecture or the performance characteristics of any embodiment that provides, and these figure should not be interpreted as limit or restriction by according to the numerical value that exemplary embodiment of the present invention contained or the scope of attribute.For example, for the sake of clarity, can dwindle or amplify the relative thickness and the location of molecule, layer, zone and/or structural detail.In the accompanying drawings, use similar or identical Reference numeral to represent similar or components identical or characteristic.
Embodiment
Now, will describe in more detail according to exemplary embodiment of the present invention with reference to accompanying drawing.Yet these exemplary embodiments can multiple different form be implemented, and should not be interpreted as the embodiment that is only limited to here to be set forth.Should be understood that, provide these embodiment of the present inventionly to disclose thoroughly and complete, and the design of these exemplary embodiments fully conveyed to those of ordinary skills in order to make.In the accompanying drawings, for the sake of clarity, exaggerated the thickness in layer and zone, and used the identical Reference numeral to represent components identical, thereby will omit description of them.
Should be understood that when element was known as " connection " or " combination " to another element, this element can directly connect or be attached to another element, perhaps can have intermediary element.Different is when arriving another element, not have intermediary element when element is known as " directly connecting " or " directly combining ".In whole accompanying drawings, identical Reference numeral is represented components identical all the time.As used herein, term " and/or " combination in any and all combinations of comprising one or more relevant Listed Items.Should explain in an identical manner other words of being used to describe the relation between element or the layer (for example, " and ... between " and " directly exist ... between ", " with ... adjacent " and " with ... direct neighbor ", " ... on " and " directly exist ... On " etc.).
In addition; It is to be further understood that; " first ", " second " are waited and describe different elements, assembly, zone, layer and/or part although here can use a technical term, and these elements, assembly, zone, layer and/or part should not receive the restriction of these terms.These terms only are to be used for an element, assembly, zone, layer or part and another element, assembly, zone, layer or part are made a distinction.Therefore, under situation about not breaking away from according to the instruction of exemplary embodiment of the present invention, below first element, assembly, zone, layer or the part discussed also can be known as second element, assembly, zone, layer or part.
For the ease of describing; Here can the usage space relative terms; As " ... under ", " ... on ", " following ", " in ... top ", " top " etc., be used for describing spatial relation like an element shown in the figure or characteristic and other elements or characteristic.Should be understood that the space relative terms is intended to comprise the different azimuth in using or operating the orientation of being described in the drawings except device.For example, if the device in the accompanying drawing is squeezed, then be described as to be positioned as " above other elements or characteristic " or " on other elements or characteristic " after the element of " in other elements or beneath " or " under other elements or characteristic ".Thereby exemplary term " in ... below " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (revolve turn 90 degrees or be in other orientation), and employed space relative descriptors is here made respective explanations.
Here employed term only is in order to describe specific embodiment, but not the intention restriction is according to exemplary embodiment of the present invention.As used herein, only if context spells out in addition, otherwise singulative also is intended to comprise plural form.In addition; It is to be further understood that; When using a technical term " comprising " and/or " comprising " in this manual; It indicates and has said characteristic, integral body, step, operation, element and/or assembly, does not exist or additional one or more other characteristics, integral body, step, operation, element, assembly and/or their combination but do not get rid of.
At this, the reference schematic cross sectional view of the preferred embodiment (and intermediate structure) of property embodiment is as an example described according to exemplary embodiment of the present invention.Like this, the shape variation that illustrates that for example caused by manufacturing technology and/or tolerance can appear in expectation.Therefore, exemplary embodiment should not be interpreted as the concrete shape that only limits in the zone shown in this, but can also comprise for example by making the form variations that is caused.For example, the injection zone that is depicted as rectangle can have rounding or the characteristic of bending and/or the graded of implantation concentration at its edge, and the binary of being not only from injection zone to non-injection zone changes.Equally, can cause the zone between the surface that this buried regions and injection are passed through also can have some injections through the buried regions that inject to form.Therefore, the zone shown in the figure comes down to schematically, and their shape is not that intention illustrates each the regional true form in the device, and is not the scope of intention restriction according to exemplary embodiment of the present invention.
Only if definition is arranged in addition, otherwise employed here whole terms (comprising technical term and scientific terminology) all have the meaning equivalent in meaning with those skilled in the art's common sense.It will also be understood that; Only if clearly definition here; Otherwise this type of the term term such as in general dictionary, defining should be interpreted as the meaning that has with they aggregatio mentiums in the linguistic context of association area, and does not explain them with desirable or too formal implication.
[exemplary embodiment]
Below, will come alignment deviation check mark and preparation method thereof is according to an exemplary embodiment of the present invention explained with reference to accompanying drawing 3A-3B and Fig. 4 A-4F.
Please, wherein show the vertical view of alignment deviation check mark 300 according to an exemplary embodiment of the present invention with reference to Fig. 3 A.
Shown in Fig. 3 A, see from the plane, alignment deviation check mark 300 comprise first minor structure 301, be arranged on second minor structure 302 in first minor structure 301 and be arranged on first minor structure 301 and second minor structure 302 between the 3rd minor structure 303.
As an example, first minor structure 301 is made up of four strip mark 301a, 301b, 301c and 301d surrounding " mouth " font.Wherein two strip mark 301a and 301c are used to check the alignment deviation of vertical direction, and two other strip mark 301b and 301d are used to check the alignment deviation of horizontal direction.
As an example, second minor structure 302 is made up of a square shape mark.Certainly, second minor structure 302 also can have other shapes.
As an example, the 3rd minor structure 303 has the structure similar with first minor structure 301.Specifically, the 3rd minor structure 303 is made up of four strip mark 302a, 302b, 302c and 302d surrounding " mouth " font.Wherein two strip mark 302a and 302c are used to check the alignment deviation of vertical direction, and two other strip mark 302b and 302d are used to check the alignment deviation of horizontal direction.These four strip mark 302a-302d are parallel to four strip mark 301a-301d of first minor structure 301 respectively, and the strip mark in the 3rd minor structure 303 is all short than the strip mark in first minor structure.See that from the plane first minor structure 301 and the 3rd minor structure 303 nest together and surround " returning " font.
Here, what need specify is, in the layout design stage, can according to the process conditions of reality adjust square shape mark every limit length with and with corresponding strip mark between distance; Spacings between the length of strip mark and the adjacent two strip marks etc. can be different and different with semiconductor process techniques level (for example, 65nm, 30nm etc.), and also can adjust these distances in the layout design stage according to actual conditions.Therefore, in this application, only to each key element of constituting the alignment deviation check mark and between the position relation do qualitative description but do not do quantitative description.
It shown in Fig. 3 B the schematic cross sectional view of alignment deviation check mark 300.Shown in Fig. 3 B, see that from section first minor structure 301 and second minor structure 302 all are formed in the preceding material layer 310, and be formed groove-like as the strip mark 301a-301d and the square shape mark of its part.The 3rd minor structure 303 is formed in the present material layer 320, and is formed convex as the strip mark 302a-302d of its part.
Here; What need explain is; Though only first minor structure 301 and second minor structure 302 are depicted as groove-like and the 3rd minor structure 303 are depicted as convex among Fig. 3 A-3B; But should be understood that to those skilled in the art first minor structure 301 and second minor structure 302 also can form convex and the 3rd minor structure 303 forms groove-like, perhaps first, second all forms convex or groove-like with the 3rd minor structure 301-303.
Next, please with reference to Fig. 4 A-4F, wherein show schematic cross sectional view according to each processing step in the process of prior art making alignment deviation check mark 300.
At first, shown in Fig. 4 A, first material layer 401 is provided.Will on first material layer 401, form first minor structure and second minor structure of alignment deviation check mark.As an example, first material layer 401 can be the interconnecting metal layer that is used to make metal line that constitutes such as metals such as aluminium, copper.As another example, first material layer 401 can be the gate material layers that constitutes by such as polysilicon, metal (for example, aluminium) etc.As another example, first material layer 401 can be the interlayer dielectric layer that constitutes by such as silicon dioxide, advanced low-k materials (for example, black diamond (BD)).As another example, first material layer 401 can be a Semiconductor substrate.For example, under the situation of the lithographic process steps that is used to define active area, need on Semiconductor substrate, form first minor structure and second minor structure of alignment deviation check mark.
Then; Shown in Fig. 4 B; Spin coating first photoresist layer 402 on first material layer 401, and through exposure with develop and with the first minor structure pattern on the first mask (not shown) (that is the pattern of first minor structure 301 shown in Fig. 3 A) and the second minor structure pattern (promptly; The pattern of second minor structure 302 shown in Fig. 3 A) transfers on first photoresist layer 402, to define the first minor structure pattern and the second minor structure pattern.Wherein, said first photoresist layer 402 is positive glue.In addition, can adopt by the hard mask layer that constitutes such as silica or silicon nitride to replace first photoresist layer 402 as mask layer, perhaps with first photoresist layer 402 as mask layer.The process conditions and the parameter that form hard mask layer and photoresist layer are well-known to those skilled in the art, and they can select for use according to actual needs, repeat no more at this.
Then; Shown in Fig. 4 C; With first photoresist layer 402 is mask; Etching first material layer 401, with the first minor structure pattern on first photoresist layer 402 and the second minor structure design transfer to first material layer 401, thereby in first material layer 401, form the first minor structure 403a and the second minor structure 403b.As an example, in the present embodiment, the first minor structure 403a and the second minor structure 403b are formed groove-like.The method that forms the first minor structure 403a and the second minor structure 403b can be dry etching or wet etching, after etching is accomplished, can remove first photoresist layer 402 through plasma ashing technology.Here, need to prove, treat that can there be aberration in the first minor structure 403a and the second minor structure 403b with the peripheral region when under electron microscope, observing, thereby can be recognized after the whole completion of subsequent technique.In addition, what also need explain is that the bottom of forming the groove of the first minor structure 403a and the second minor structure 403b can be arranged in first material layer 401, perhaps can flush (that is, first material layer 401 is carved and worn) with the bottom surface of first material layer 401.
Then, shown in Fig. 4 D, on first material layer 401, the first minor structure 403a and the second minor structure 403b, form second material layer 405, in second material layer 405, will form the 3rd minor structure of alignment deviation check mark.As an example, be under the situation of Semiconductor substrate at first material layer 401, second material layer 405 can be the lamination that is made up of polycrystalline silicon grid layer and gate insulator.
Here, what need specify is that first material layer 401 and second material layer 405 can be need form any two layers of material of pattern through photoetching and etch process above that in the whole semiconductor fabrication, and are not limited to example mentioned above.Therefore, between first material layer 401 and second material layer 405, can there be intermediate layer of material 404, for example, gate insulator, interlayer dielectric layer etc.; And after forming the first minor structure 403a and before forming second material layer 405, also can carry out various middle process steps, for example, ion injection, annealing in process, contact hole filling etc.
Then; Shown in Fig. 4 E; Spin coating second photoresist layer 406 on second material layer 405; And through exposure with develop and the 3rd minor structure pattern on the second mask (not shown) (that is, the pattern of the 3rd minor structure 303 shown in Fig. 3 A) is transferred on second photoresist layer 405, to define the 3rd minor structure pattern.Wherein, said second photoresist layer 406 is positive glue.Need be noted that; Between second material layer 405 and second photoresist layer 406; Also can form one deck by the hard mask layer that constitutes such as silica or silicon nitride, the problem that possibly cause because etching period is long and photoresist layer thickness is not enough to prevent.
Then, shown in Fig. 4 F, be mask with second photoresist layer 406, etching second material layer 405, with the 3rd minor structure design transfer on second photoresist layer 406 to second material layer 405, thereby in second material layer 405, form the 3rd minor structure 407.As an example, in the present embodiment, the 3rd minor structure 407 is formed convex.The method that forms second minor structure 407 can be dry etching method or wet process, after etching is accomplished, can remove second photoresist layer 406 through plasma ashing technology.
So far, accomplished the making of alignment deviation check mark according to an exemplary embodiment of the present invention.
Please with reference to Fig. 5, wherein show the flow chart of the method that is used to make the alignment deviation check mark according to an exemplary embodiment of the present invention, be used for the flow process that generality illustrates entire method.
At first, in step S501, first material layer is provided, on said first material layer, will forms first minor structure and second minor structure of said alignment deviation check mark.
Then, in step S502, said first material layer of etching, with the first minor structure pattern on first mask and the second minor structure design transfer to said first material layer, thereby in said first material layer, form first minor structure and second minor structure.
Then, in step S503, on said first material layer, said first minor structure and said second minor structure, form second material layer, in said second material layer, will form the 3rd minor structure of said alignment deviation check mark.
At last, in step S504, said second material layer of etching, with the 3rd minor structure design transfer on second mask to said second material layer, thereby in said second material layer, form the 3rd minor structure.
[beneficial effect of the present invention]
Below, will beneficial effect of the present invention be described with reference to Fig. 6.
As shown in Figure 6, strip mark A1 and square shape mark A2 are formed in the previous material layer, constitute first minor structure and second minor structure of alignment deviation check mark.Strip mark B is formed in the current material layer, constitutes the 3rd minor structure of alignment deviation check mark.
For the strip mark, annealing in process maybe not can make its expansion and rotation and its translation or orthogonality are changed; And for square shape mark, annealing in process maybe not can make its translation or orthogonality change and can make its expansion.
Therefore, can be based on the various errors of the incompatible inspection of following pattern groups:
(1) the deviation △ A1-A2 between strip mark A1 in the preceding material layer and the square shape mark A2 can be used to check the distortion that causes owing to annealing in process;
(2) the deviation △ B-A1 between strip mark B in the present material layer and the strip mark A1 in the preceding material layer can be used to check the breathing and rotation alignment deviation that cause owing to exposure error; And
(3) the deviation △ B-A2 between strip mark B in the present material layer and the square shape mark A2 in the preceding material layer can be used to check translation, rotation and the orthogonality change location alignment deviation owing to exposure error causes.
Specifically, owing to do not have exposure error between mark A1 and the A2, the error between mark A1 and the A2 can reflect the preceding material layer distortion that causes owing to annealing in process truly.
In actual manufacture process, above each item deviation all can be measured by the alignment precision inspection board of special use automatically, and can carry out adequate compensation based on the result who measures to deviation by this board.Concrete measurement and compensation method are technology known in the field, repeat no more at this.
Shown in Fig. 7 A-7B several kinds of variation of the present invention.Here, those skilled in the art will appreciate that variation of the present invention is not limited to two kinds shown in Fig. 7, but can also on the example basis that has illustrated, make amendment once more, for example, first, second and the position of the 3rd minor structure are changed.But, need be noted that consider the simplicity and the existing board test program of cost problem, making, the preferred use has the alignment deviation check mark that constitutes as shown in Figure 6.
In sum, can check and distinguish according to alignment deviation check mark of the present invention because distortion that annealing in process causes and because the misalignment that exposure error causes.Therefore, can check again simultaneously because all places deviation that exposure error causes monitoring such as the distortion deviation that produces in the such heat treatment process of annealing in process.
[industrial applicibility of the present invention]
Semiconductor device according to aforesaid embodiment manufacturing can be applicable in the multiple integrated circuit (IC).For example, can be memory circuitry according to IC of the present invention, like random-access memory (ram), dynamic ram (DRAM), synchronous dram (SDRAM), static RAM (SRAM) (SRAM) or read-only memory (ROM) etc.According to IC of the present invention can also be logical device, like programmable logic array (PLA), application-specific integrated circuit (ASIC) (ASIC), combination type DRAM logical integrated circuit (buried type DRAM), radio circuit or other circuit devcies arbitrarily.For example, IC chip according to the present invention can be used for consumer electronic products, in various electronic products such as personal computer, portable computer, game machine, cellular phone, personal digital assistant, video camera, digital camera, mobile phone.
The present invention is illustrated through the foregoing description, but should be understood that, the foregoing description just is used for for example and illustrative purposes, but not is intended to the present invention is limited in the described scope of embodiments.In addition, it will be appreciated by persons skilled in the art that the present invention is not limited to the foregoing description, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by appended claims book and equivalent scope thereof.
Claims (10)
1. alignment deviation check mark comprises:
First minor structure, said first minor structure is formed in first material layer, and is made up of four strip marks that surround " mouth " font;
Second minor structure, said second minor structure is formed in said first material layer, and it is inboard to be positioned at said first minor structure; With
The 3rd minor structure; Said the 3rd minor structure is formed on second material layer that is arranged on said first material layer and is made up of four strip marks that surround " mouth " font; And see from the plane; " return " font with the nested formation of said first minor structure, and said first, second do not overlap each other with the 3rd minor structure.
2. alignment deviation check mark according to claim 1 is characterized in that, said second minor structure is made up of square shape mark.
3. alignment deviation check mark according to claim 2 is characterized in that, sees from the plane, and said the 3rd minor structure is between said first minor structure and said second minor structure.
4. alignment deviation check mark according to claim 2 is characterized in that, sees from the plane, and said first minor structure is between said second minor structure and said the 3rd minor structure.
5. alignment deviation check mark according to claim 1 is characterized in that, said second minor structure is made up of four strip marks that surround " mouth " font.
6. alignment deviation check mark according to claim 5 is characterized in that, sees from the plane, and said second minor structure is between said first minor structure and said the 3rd minor structure.
7. alignment deviation check mark according to claim 5 is characterized in that, sees from the plane, and said the 3rd minor structure is between said first minor structure and said second minor structure.
8. alignment deviation check mark according to claim 5 is characterized in that, sees from the plane, and said first minor structure is between said first minor structure and said second minor structure.
9. alignment deviation check mark according to claim 1 is characterized in that, sees from section, and said first, second is formed groove-like or convex with the 3rd minor structure.
10. method that is used to make alignment deviation check mark as claimed in claim 1, said alignment deviation check mark comprises first minor structure, second minor structure and the 3rd minor structure, said method comprises:
First material layer is provided;
Said first material layer of etching, with the first minor structure pattern on first mask and the second minor structure design transfer to said first material layer, thereby in said first material layer, form said first minor structure and said second minor structure;
On said first material layer, form second material layer; And
Said second material layer of etching, with the 3rd minor structure design transfer on second mask to said second material layer, thereby in said second material layer, form said the 3rd minor structure.
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