CN102730945B - Large-area contact type machining device for fused quartz by plasma discharge machining - Google Patents
Large-area contact type machining device for fused quartz by plasma discharge machining Download PDFInfo
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- CN102730945B CN102730945B CN201210248655.1A CN201210248655A CN102730945B CN 102730945 B CN102730945 B CN 102730945B CN 201210248655 A CN201210248655 A CN 201210248655A CN 102730945 B CN102730945 B CN 102730945B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 239000005350 fused silica glass Substances 0.000 title claims abstract description 11
- 238000003754 machining Methods 0.000 title claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 50
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000001307 helium Substances 0.000 claims abstract description 30
- 229910052734 helium Inorganic materials 0.000 claims abstract description 30
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- 238000001816 cooling Methods 0.000 claims abstract description 21
- 238000002156 mixing Methods 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000009434 installation Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- 150000002500 ions Chemical class 0.000 abstract description 4
- 239000012530 fluid Substances 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005111 flow chemistry technique Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000005495 investment casting Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
大面积接触式等离子体放电加工熔石英加工装置，它涉及一种等离子体加工装置，以解决现有等离子体加工过程中的电极温度高，加工时间短，导致反应离子的活性相对较低，去除率低的问题。导风板的上端面与端部工件夹板的上端面在同一水平面内，成型电极设置在工件槽的上方，成型电极的下端面与工件槽的上端面设有两电极之间放电间距，上导流体与下导流体之间的腔体为导气腔，上导流体和下导流体的进气端端面上均设有进气孔，两个进气孔与气体混气箱连通，氦气气瓶、四氟化碳气瓶和氧气瓶分别通过氦气流量计、四氟化碳流量计和氧气流量计与气体混气箱连接，水泵与下冷却通道和上冷却通道连接，射频电源与高电极和底座板连接。本发明用于等离子体加工。
Large-area contact plasma discharge machining fused silica processing device, which relates to a plasma processing device to solve the problem of high electrode temperature and short processing time in the existing plasma processing process, which leads to relatively low activity of reactive ions and removes low rate problem. The upper end surface of the air deflector and the upper end surface of the end workpiece clamping plate are in the same horizontal plane, the forming electrode is arranged above the workpiece groove, and the discharge distance between the two electrodes is set on the lower end surface of the forming electrode and the upper end surface of the workpiece groove, and the upper guide The cavity between the fluid and the lower guide body is the air guide cavity, and the air inlet ends of the upper guide body and the lower guide body are provided with air inlet holes, and the two air inlet holes are connected with the gas mixing box, and the helium gas bottle, carbon tetrafluoride gas cylinder and oxygen cylinder are connected to the gas mixing box through the helium flowmeter, carbon tetrafluoride flowmeter and oxygen flowmeter respectively; the water pump is connected to the lower cooling channel and the upper cooling channel; The electrodes are connected to the base plate. The invention is useful in plasma processing.
Description
技术领域technical field
本发明涉及一种大气压下的等离子体加工装置，具体涉及一种通过射频电源进行大面积等离子加工熔石英的装置。The invention relates to a plasma processing device under atmospheric pressure, in particular to a device for large-area plasma processing of fused quartz through a radio frequency power supply.
背景技术Background technique
融石英是氧化硅的非晶态（玻璃态），是典型的玻璃，主要用于精密铸造、玻璃陶瓷、耐火材料及电子电器等行业，熔石英材料因其化学性质稳定、透紫外性好、均匀性好和耐辐射性好，被广泛应用于高能激光窗口、航空航天、微电子及其他光学领域。目前，由于熔石英的特性加之对精密元件的高要求，大面积加工效率较低。针对高精度熔石英表面的加工方法分为两大类，研磨和抛光。研磨的加工效率较高，但是通常会带来表面及亚表面变质层损伤，表面质量不理想；抛光虽然能得到较好的表面质量，但对于大口径的光学元件而言，其加工周期长、效率低。因此，对于表面要求较高的光学镜片的加工，为提高加工效率，采用先研磨进行大去除的面型加工、然后抛光进行表面质量修整的方法。随着光学技术的发展，提出了真空下等离子体加工方法，但是由于真空下的等离子体加工技术需要较高的设备条件，成本高，因此大气压下等离子体加工得到人们的关注。Fused silica is an amorphous state (glass state) of silicon oxide, and is a typical glass. It is mainly used in industries such as precision casting, glass ceramics, refractory materials, and electronic appliances. With good uniformity and radiation resistance, it is widely used in high-energy laser windows, aerospace, microelectronics and other optical fields. Currently, large-area processing is less efficient due to the properties of fused silica combined with high demands on precision components. The processing methods for high-precision fused silica surfaces are divided into two categories, grinding and polishing. Grinding has high processing efficiency, but it usually causes damage to the surface and sub-surface metamorphic layers, and the surface quality is not ideal; although polishing can obtain better surface quality, for large-caliber optical elements, the processing cycle is long, low efficiency. Therefore, for the processing of optical lenses with high surface requirements, in order to improve the processing efficiency, the method of surface processing for large removal by grinding first, and then polishing for surface quality modification is adopted. With the development of optical technology, the plasma processing method under vacuum has been proposed, but because the plasma processing technology under vacuum requires high equipment conditions and high cost, plasma processing under atmospheric pressure has attracted people's attention.
基于大气压下的等离子体加工分为射流和接触式加工，射流式即由阳极和阴极中产生的等离子体喷射而出，作用于工件表面进行加工，接触式即工件直接置于阴极和阳极之间进行工件的表面加工。射流加工有利于进表面质量和面型的小范围修整，但由于射流导致反应离子的活性相对较低，因此去除率也较低；接触式加工产生的等离子体直接作用于工件表面，维持等离子体中反应原子的活性，提高去除率，但是对于控制面型及表面质量的能力较弱。另外，目前对于大型光学镜片的抛光普遍采用小口径加工，对于大面积的光学零件加工加工周期长，效率低。Plasma processing based on atmospheric pressure is divided into jet and contact processing. The jet type is ejected from the plasma generated in the anode and cathode and acts on the surface of the workpiece for processing. The contact type means that the workpiece is directly placed between the cathode and the anode. Carry out surface processing of the workpiece. Jet processing is beneficial to small-scale modification of surface quality and surface shape, but the activity of reactive ions caused by jet flow is relatively low, so the removal rate is also low; the plasma generated by contact processing directly acts on the surface of the workpiece to maintain plasma The activity of the reactive atoms in the medium increases the removal rate, but the ability to control the surface shape and surface quality is weak. In addition, small-diameter processing is generally used for polishing large-scale optical lenses at present, and the processing cycle for large-area optical parts is long and the efficiency is low.
发明内容Contents of the invention
本发明的目的是为解决现有等离子体加工过程中的电极温度高，加工时间短，导致反应离子的活性相对较低，去除率低的问题，提供一种大面积接触式等离子体放电加工熔石英加工装置。The purpose of the present invention is to solve the problems of high electrode temperature and short processing time in the existing plasma processing process, resulting in relatively low activity of reactive ions and low removal rate, and to provide a large-area contact plasma discharge processing melting Quartz processing device.
本发明的大面积接触式等离子体放电加工熔石英加工装置包括射频电源、高电极、成型电极、上导流体、下导流体、地电极、导风板、端部工件夹板、气体混气箱、氦气气瓶、四氟化碳气瓶、氧气瓶、氦气流量计、四氟化碳流量计、氧气流量计、水泵、销、两个上箱盖、两个侧板和两个导气管，地电极由上端板和底座板组成，上端板沿底座板的纵向中心线设置在底座板上，且上端板与底座板制成一体，底座板上端面且位于上端板的纵向两侧为侧板安装处，底座板上端面且位于上端板的出气端一侧为出气道，底座板上端面且位于上端板的进气端一侧为进气道，端部工件夹板设置在上端板上端面的出气端一侧，导风板设置在上端板的进气端端面处，导风板的上端面与端部工件夹板的上端面在同一水平面内，导风板与端部工件夹板之间为工件槽，导风板朝向进气道一侧设有第一导气斜面，第一导气斜面由进气端至出气端倾斜向上，下导流体设置在进气道处，每个侧板安装处设置一个侧板，成型电极设置在工件槽的上方，成型电极的下端面与工件槽的上端面设有两电极之间放电间距，放电间距为2mm～5mm，高电极设置在成型电极的上端面上，且高电极与成型电极通过销连接，高电极设置在两个上箱盖内，两个上箱盖以销的轴线对称设置，且一个上箱盖位于导风板的上方，另一个上箱盖位于出气道的上方，导风板上方的上箱盖上以两电极之间放电间距的水平中心线为基准对称设有第二导气斜面，上导流体与下导流体扣合设置，上导流体与下导流体之间的腔体为导气腔，上导流体的出气端端面与上箱盖连接，下导流体的出气端端面与导风板连接，上导流体和下导流体的进气端端面上均设有进气孔，两个进气孔分别通过导气管与气体混气箱连通，氦气气瓶、四氟化碳气瓶和氧气瓶分别与其对应的氦气流量计、四氟化碳流量计和氧气流量计连接，氦气流量计、四氟化碳流量计和氧气流量计均与气体混气箱连接，上端板内设有下冷却通道，高电极内设有上冷却通道，水泵分别通过导管与下冷却通道和上冷却通道连接，射频电源通过导线与高电极和底座板连接。The large-area contact plasma discharge machining fused silica processing device of the present invention includes a radio frequency power supply, a high electrode, a forming electrode, an upper guide body, a lower guide body, a ground electrode, a wind deflector, an end workpiece splint, a gas mixing box, Helium gas cylinder, carbon tetrafluoride gas cylinder, oxygen cylinder, helium flow meter, carbon tetrafluoride flow meter, oxygen flow meter, water pump, pins, two upper tank covers, two side panels and two gas guide tubes , the ground electrode is composed of an upper end plate and a base plate, the upper end plate is arranged on the base plate along the longitudinal centerline of the base plate, and the upper end plate and the base plate are made into one body, the upper end of the base plate is located on the longitudinal sides of the upper end plate as sides Where the plate is installed, the end surface of the base plate and the side of the air outlet end of the upper end plate is the air outlet, the end surface of the base plate and the side of the air inlet end of the upper end plate is the air inlet, and the end workpiece splint is set on the end surface of the upper end plate On the side of the air outlet end, the air deflector is set at the end face of the air inlet end of the upper end plate, the upper end face of the air deflector and the upper end face of the end workpiece splint are in the same horizontal plane, and the distance between the air deflector and the end workpiece splint is The workpiece groove, the side of the air deflector facing the air inlet is provided with a first air guide slope, the first air guide slope is inclined upward from the inlet end to the air outlet end, the lower guide body is arranged at the air inlet, and each side plate is installed Set a side plate at the center, the forming electrode is set above the workpiece groove, the lower end surface of the forming electrode and the upper end surface of the workpiece groove are provided with a discharge distance between the two electrodes, the discharge distance is 2mm ~ 5mm, and the high electrode is set on the upper surface of the forming electrode On the end face, the high electrode and the forming electrode are connected by pins, the high electrode is arranged in two upper case covers, and the two upper case covers are arranged symmetrically with the axis of the pin, and one upper case cover is located above the wind deflector, and the other The upper box cover is located above the air outlet, and the upper box cover above the air deflector is symmetrically provided with the horizontal center line of the discharge distance between the two electrodes. , the cavity between the upper guide body and the lower guide body is the air guide chamber, the air outlet end face of the upper guide body is connected with the upper box cover, the air outlet end face of the lower guide body is connected with the air guide plate, the upper guide body and the lower guide body There are inlet holes on the end face of the inlet end of the fluid, and the two inlet holes are respectively connected with the gas mixing box through the air guide tube, and the helium gas cylinder, carbon tetrafluoride gas cylinder and oxygen cylinder are respectively connected with the corresponding helium The flowmeter, carbon tetrafluoride flowmeter and oxygen flowmeter are connected, and the helium flowmeter, carbon tetrafluoride flowmeter and oxygen flowmeter are all connected to the gas mixing box. The upper end plate is equipped with a lower cooling channel, and the upper electrode is An upper cooling channel is provided, the water pump is respectively connected to the lower cooling channel and the upper cooling channel through conduits, and the radio frequency power supply is connected to the upper electrode and the base plate through wires.
本发明包含以下有益效果：The present invention comprises following beneficial effect:
一、由于本发明在高电极和地电极的内部均分别设有上冷却通道和下冷却通道，实现了加工过程中的电极冷却，降低了加工过程中的电极温度，从而可以进行长时间的加工，使得反应离子的活性相对较高，因此去除率得到提高。本发明中的成型电极可以随时更换，通过调整加工工艺参数和电极形状可以实现工件面型的加工和工件表面质量的修整，兼顾两者从而达到高效去除的效果。二、本发明通过水泵、高电极和地电极进行加工时的水冷，冷却部分对于工件加工过程的作用是降低了加工中的成型电极和工件温度，防止温度过高造成成型电极损害，从而延长了等离子体放电加工的时间，达到更好的加工效果。三、本发明实现了大气压下大面积接触式等离子体加工，比以往的小孔径及射流加工方法具有较高的去除效率。1. Since the present invention has an upper cooling passage and a lower cooling passage respectively inside the upper electrode and the ground electrode, the electrode cooling during the processing is realized, and the electrode temperature during the processing is reduced, so that long-term processing can be carried out , so that the activity of the reagent ion is relatively high, so the removal rate is improved. The forming electrode in the present invention can be replaced at any time. By adjusting the processing parameters and electrode shape, the processing of the workpiece surface and the trimming of the surface quality of the workpiece can be realized, and the effect of efficient removal can be achieved by taking into account both. 2. The present invention uses water pumps, high electrodes and ground electrodes for water cooling during processing. The effect of the cooling part on the workpiece processing process is to reduce the temperature of the forming electrodes and workpieces during processing, preventing damage to the forming electrodes caused by excessive temperatures, thereby prolonging the working life of the workpiece. The time of plasma discharge machining can achieve better processing effect. 3. The present invention realizes large-area contact plasma processing under atmospheric pressure, and has higher removal efficiency than previous small-aperture and jet-flow processing methods.
附图说明Description of drawings
图1是本发明的大面积接触式等离子体放电加工熔石英加工装置的整体主剖视图；图2是图1的A-A截面视图；图3是地电极7的结构立体图。Fig. 1 is the overall front sectional view of the large-area contact plasma discharge machining fused silica processing device of the present invention; Fig. 2 is the A-A sectional view of Fig. 1; Fig. 3 is a perspective view of the structure of the ground electrode 7.
具体实施方式Detailed ways
具体实施方式一、结合图1～图3说明本实施方式，本实施方式的大面积接触式等离子体放电加工熔石英加工装置包括射频电源1、高电极3、成型电极4、上导流体5、下导流体6、地电极7、导风板8、端部工件夹板9、气体混气箱10、氦气气瓶11、四氟化碳气瓶12、氧气瓶13、氦气流量计14、四氟化碳流量计15、氧气流量计16、水泵17、销22、两个上箱盖2、两个侧板18和两个导气管25，地电极7由上端板7-1和底座板7-2组成，上端板7-1沿底座板7-2的纵向中心线设置在底座板7-2上，且上端板7-1与底座板7-2制成一体，底座板7-2上端面且位于上端板7-1的纵向两侧为侧板安装处7-3，底座板7-2上端面且位于上端板7-1的出气端一侧为出气道7-4，底座板7-2上端面且位于上端板7-1的进气端一侧为进气道7-5，端部工件夹板9设置在上端板7-1上端面的出气端一侧，导风板8设置在上端板7-1的进气端端面处，导风板8的上端面与端部工件夹板9的上端面在同一水平面内，导风板8与端部工件夹板9之间为工件槽21，导风板8朝向进气道7-5一侧设有第一导气斜面8-1，第一导气斜面8-1由进气端至出气端倾斜向上，下导流体6设置在进气道7-5处，每个侧板安装处7-3设置一个侧板18，成型电极4设置在工件槽21的上方，成型电极4可根据工件的形状更换不同形状的电极。成型电极4的下端面与工件槽21的上端面设有两电极之间放电间距h，高电极3设置在成型电极4的上端面上，且高电极3与成型电极4通过销22连接，高电极3设置在两个上箱盖2内，两个上箱盖2以销22的轴线对称设置，且一个上箱盖2位于导风板8的上方，另一个上箱盖2位于出气道7-4的上方，导风板8上方的上箱盖2上以两电极之间放电间距h的水平中心线为基准对称设有第二导气斜面2-1，上导流体5与下导流体6扣合设置，上导流体5与下导流体6之间的腔体为导气腔20，上导流体5的出气端端面与上箱盖2连接，下导流体6的出气端端面与导风板8连接，上导流体5和下导流体6的进气端端面上均设有进气孔24，两个进气孔24分别通过导气管25与气体混气箱10连通，氦气气瓶11、四氟化碳气瓶12和氧气瓶13分别与其对应的氦气流量计14、四氟化碳流量计15和氧气流量计16连接，氦气流量计14、四氟化碳流量计15和氧气流量计16均与气体混气箱10连接，上端板7-1内设有下冷却通道7-1-1，高电极3内设有上冷却通道3-1，水泵17分别通过导管与下冷却通道7-1-1和上冷却通道3-1连接，射频电源1通过导线与高电极3和底座板7-2连接。Specific Embodiment 1. This embodiment is described in conjunction with FIGS. 1 to 3. The large-area contact plasma discharge machining fused silica processing device of this embodiment includes a radio frequency power source 1, a high electrode 3, a forming electrode 4, an upper conductor 5, Down guide body 6, ground electrode 7, wind deflector 8, end workpiece splint 9, gas mixing box 10, helium gas cylinder 11, carbon tetrafluoride gas cylinder 12, oxygen cylinder 13, helium flow meter 14, Tetrafluorocarbon flowmeter 15, oxygen flowmeter 16, water pump 17, pin 22, two upper case covers 2, two side plates 18 and two air guide pipes 25, ground electrode 7 is made of upper end plate 7-1 and base plate 7-2, the upper end plate 7-1 is arranged on the base plate 7-2 along the longitudinal centerline of the base plate 7-2, and the upper end plate 7-1 is integrated with the base plate 7-2, and the base plate 7-2 The upper end surface and the longitudinal sides of the upper end plate 7-1 are the side plate installation places 7-3, the upper end surface of the base plate 7-2 and the air outlet side of the upper end plate 7-1 is the air outlet 7-4, and the base plate 7-2 The upper end surface and the air inlet side of the upper end plate 7-1 is the air inlet 7-5, the end workpiece splint 9 is arranged on the air outlet side of the upper end surface of the upper end plate 7-1, and the air deflector 8 Set at the end face of the air inlet end of the upper end plate 7-1, the upper end face of the wind deflector 8 and the upper end face of the end workpiece splint 9 are in the same horizontal plane, and the gap between the wind deflector 8 and the end workpiece splint 9 is a workpiece groove 21. The air deflector 8 is provided with a first air guide slope 8-1 facing the air inlet 7-5, the first air guide slope 8-1 is inclined upward from the air inlet end to the air outlet end, and the lower guide body 6 is set on At the air inlet 7-5, each side plate installation place 7-3 is provided with a side plate 18, and the forming electrode 4 is arranged on the top of the workpiece groove 21, and the forming electrode 4 can replace electrodes of different shapes according to the shape of the workpiece. The lower end surface of the forming electrode 4 and the upper end surface of the workpiece groove 21 are provided with a discharge distance h between the two electrodes, the high electrode 3 is arranged on the upper end surface of the forming electrode 4, and the high electrode 3 and the forming electrode 4 are connected by a pin 22. The electrode 3 is arranged in two upper case covers 2, and the two upper case covers 2 are arranged symmetrically with the axis of the pin 22, and one upper case cover 2 is located above the wind deflector 8, and the other upper case cover 2 is located at the air outlet 7 -4 above, on the upper box cover 2 above the wind deflector 8, the horizontal center line of the discharge distance h between the two electrodes is symmetrically provided with a second air guide slope 2-1, and the upper guide body 5 and the lower guide body 6 buckling arrangement, the cavity between the upper guide body 5 and the lower guide body 6 is the air guide chamber 20, the gas outlet end face of the upper guide body 5 is connected with the upper case cover 2, and the gas outlet end face of the lower guide body 6 is connected with the guide body The wind plate 8 is connected, and the air inlet end faces of the upper guide body 5 and the lower guide body 6 are all provided with air inlet holes 24, and the two air inlet holes 24 are respectively communicated with the gas mixing box 10 through the air guide pipe 25, and the helium gas Bottle 11, carbon tetrafluoride gas cylinder 12 and oxygen cylinder 13 are respectively connected with corresponding helium flow meter 14, carbon tetrafluoride flow meter 15 and oxygen flow meter 16, helium gas flow meter 14, carbon tetrafluoride flow meter 15 and the oxygen flow meter 16 are connected to the gas mixing box 10, the upper end plate 7-1 is provided with a lower cooling channel 7-1-1, the upper electrode 3 is provided with an upper cooling channel 3-1, and the water pump 17 is respectively passed through the conduit It is connected with the lower cooling channel 7-1-1 and the upper cooling channel 3-1, and the radio frequency power supply 1 is connected with the high electrode 3 and the base plate 7-2 through wires.
射频电源1、高电极3、成型电极4和地电极7构成电路部分；高电极3、地电极7和水泵17构成冷却部分；上导流体5、下导流体6、导风板8、气体混气箱10、氦气气瓶11、四氟化碳气瓶12、氧气瓶13、氦气流量计14、四氟化碳流量计15、氧气流量计16、两个上箱盖2和两个导气管25构成气流部分；气体混气箱10、氦气气瓶11、四氟化碳气瓶12、氧气瓶13、氦气流量计14、四氟化碳流量计15和氧气流量计16构成反应装置。RF power supply 1, high electrode 3, forming electrode 4 and ground electrode 7 constitute the circuit part; high electrode 3, ground electrode 7 and water pump 17 constitute the cooling part; Gas box 10, helium gas cylinder 11, carbon tetrafluoride gas cylinder 12, oxygen cylinder 13, helium gas flowmeter 14, carbon tetrafluoride flowmeter 15, oxygen flowmeter 16, two upper box covers 2 and two Air guide pipe 25 constitutes the air flow part; gas mixing box 10, helium gas cylinder 11, carbon tetrafluoride gas cylinder 12, oxygen cylinder 13, helium flowmeter 14, carbon tetrafluoride flowmeter 15 and oxygen flowmeter 16 constitute Reactor.
利用本实施方式对工件进行加工时可实现两种方法加工：大去除率加工和修整加工。When using this embodiment to process workpieces, two processing methods can be realized: large removal rate processing and trimming processing.
工件的大去除率加工：通过氦气流量计14小流量的控制氦气流速，通过四氟化碳流量计15大流量的控制四氟化碳流速，氧气流量计16的流量控制在氦气流速与四氟化碳流速之间，经气体混气箱10进行充分均匀混合后为反应气体，其反应方程式为：4CF4+Si→2C2F6+SiF4，反应气体经导气管25、进气孔24进入导气腔20中，通过第一导气斜面8-1和第二导气斜面2-1进入两电极之间放电间距h，实现工件加工时的大面积等离子接触，以达到大去除率效果。Large removal rate processing of workpieces: control the flow rate of helium through helium flow meter 14 with a small flow rate, control the flow rate of carbon tetrafluoride with a large flow rate of carbon tetrafluoride flow meter 15, and control the flow rate of oxygen flow meter 16 at the helium flow rate Between the flow rate of carbon tetrafluoride and the flow rate of carbon tetrafluoride, the reaction gas is fully and evenly mixed by the gas mixing box 10, and the reaction equation is: 4CF 4 +Si→2C 2 F 6 +SiF 4 The air hole 24 enters the air guide cavity 20, enters the discharge distance h between the two electrodes through the first air guide slope 8-1 and the second air guide slope 2-1, and realizes large-area plasma contact during workpiece processing to achieve large Removal effect.
工件的修整加工（即表面修复的小去除）：通过氦气流量计14大流量的控制氦气流速，通过四氟化碳流量计15小流量的控制四氟化碳流速，氧气流量计16的流量控制在氦气流速与四氟化碳流速之间，经气体混气箱10进行充分均匀混合后为反应气体，其反应方程式为：4CF4+Si→2C2F6+SiF4，反应气体经导气管25、进气孔24进入导气腔20中，通过第一导气斜面8-1和第二导气斜面2-1进入两电极之间放电间距h，实现工件修整加工时的大面积等离子接触，以达到表面修复的小去除率效果。Finishing of workpiece (i.e. small removal of surface repair): through helium flowmeter 14 to control the flow rate of helium with high flow rate, through carbon tetrafluoride flowmeter 15 to control the flow rate of carbon tetrafluoride with small flow rate, and to control the flow rate of carbon tetrafluoride with 16 oxygen flowmeters The flow rate is controlled between the helium flow rate and the carbon tetrafluoride flow rate, and the reaction gas is fully and uniformly mixed by the gas mixing box 10. The reaction equation is: 4CF 4 +Si→2C 2 F 6 +SiF 4 , the reaction gas Enter the air guide cavity 20 through the air guide pipe 25 and the air inlet hole 24, enter the discharge distance h between the two electrodes through the first air guide slope 8-1 and the second air guide slope 2-1, and realize the large Area plasma contact to achieve small removal rate effects for surface repair.
具体实施方式二、结合图2说明本实施方式，本实施方式的两电极之间放电间距h为2mm～5mm。在此范围内能实现等离子体稳定放电。其它组成及连接关系与具体实施方式一相同。Specific Embodiment 2. This embodiment will be described with reference to FIG. 2 . In this embodiment, the discharge distance h between two electrodes is 2 mm˜5 mm. Within this range, stable plasma discharge can be achieved. Other components and connections are the same as those in the first embodiment.
具体实施方式三、结合图2说明本实施方式，本实施方式与具体实施方式一或二不同的是它还增加有两个侧工件夹板19，两个侧工件夹板19以上端板7-1的纵向中心线对称设置在上端板7-1上端面的两侧，两个侧工件夹板19的上端面与端部工件夹板9的上端面在同一水平面内。如此设置，可以防止工件在工件槽21中横向移动。更加稳固的定的位置其它组成及连接关系与具体实施方式一或二相同。Specific embodiment three, this embodiment is illustrated in conjunction with Fig. 2, the difference between this embodiment and specific embodiment one or two is that it also has two side workpiece clamping plates 19, two side workpiece clamping plates 19 above the end plate 7-1 The longitudinal center line is symmetrically arranged on both sides of the upper end surface of the upper end plate 7-1, and the upper end surfaces of the two side workpiece clamping plates 19 and the upper end surfaces of the end workpiece clamping plates 9 are in the same horizontal plane. Such arrangement can prevent the workpiece from moving laterally in the workpiece groove 21 . The other components and connection relations of the more stable fixed position are the same as those of the first or second specific embodiment.
本发明的工作过程：将成型电极4根据工件面型的需要换成所需要的面型，设备安装调整保持密封性后，检查线路连接，无误后打开射频电源1和流量计电源开关进行预热。待预热后打开冷却泵17，打开氦气气瓶11、四氟化碳气瓶12及氧气瓶13的开关，同时调整氦气流量计14、四氟化碳流量计15及氧气流量计16的流量至所需流量，待三种气体在气体混气箱10中反应后，进行系统通电，在保证反应气体流速稳定后，经导气管25、进气孔24进入导气腔20中，通过第一导气斜面8-1和第二导气斜面2-1进入两电极之间放电间距h处，此时反应进行；待加工结束后，降低射频电源功率，关闭射频电源1，关闭氦气气瓶11、四氟化碳气瓶12及氧气瓶13的开关，取出工件。The working process of the present invention: replace the forming electrode 4 with the required surface shape according to the needs of the workpiece surface shape, after the equipment is installed and adjusted to keep the airtightness, check the line connection, and turn on the radio frequency power supply 1 and the flowmeter power switch for preheating . After preheating, turn on the cooling pump 17, open the switch of the helium gas cylinder 11, the carbon tetrafluoride gas cylinder 12 and the oxygen cylinder 13, and adjust the helium gas flowmeter 14, the carbon tetrafluoride flowmeter 15 and the oxygen flowmeter 16 simultaneously After the three gases react in the gas mixing box 10, the system is powered on, and after the flow rate of the reacting gas is guaranteed to be stable, it enters the gas guide chamber 20 through the air guide tube 25 and the air inlet hole 24, and passes through The first gas-guiding slope 8-1 and the second gas-guiding slope 2-1 enter the discharge distance h between the two electrodes, and the reaction proceeds at this time; after the processing is completed, reduce the power of the radio frequency power supply, turn off the radio frequency power supply 1, and turn off the helium gas The switch of gas cylinder 11, carbon tetrafluoride gas cylinder 12 and oxygen cylinder 13 takes out workpiece.
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| CN103212774B (en) * | 2013-05-14 | 2015-07-01 | 哈尔滨工业大学 | Device for atmospheric plasma digital control processing of free curved surface optical parts |
| CN103264414B (en) * | 2013-05-14 | 2015-04-01 | 哈尔滨工业大学 | Device for processing silicon carbide sealing ring type part through atmosphere plasma |
| CN103273180B (en) * | 2013-05-14 | 2015-11-25 | 哈尔滨工业大学 | The atmosphere plasma numerical-control processing method of freeform optics part |
| CN103227092A (en) * | 2013-05-14 | 2013-07-31 | 哈尔滨工业大学 | Atmospheric plasma processing method of free-form surface microstructure optical parts |
| CN103213172B (en) * | 2013-05-14 | 2015-01-07 | 哈尔滨工业大学 | Device for water electrode atmospheric plasma processing large-caliber aspheric optical part |
| CN103236392B (en) * | 2013-05-14 | 2015-04-22 | 哈尔滨工业大学 | Method for processing rotary part by forming electrode air plasma |
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