CN102728957A - Method for generating laser beam irradiation trajectory - Google Patents
Method for generating laser beam irradiation trajectory Download PDFInfo
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- CN102728957A CN102728957A CN2012101779663A CN201210177966A CN102728957A CN 102728957 A CN102728957 A CN 102728957A CN 2012101779663 A CN2012101779663 A CN 2012101779663A CN 201210177966 A CN201210177966 A CN 201210177966A CN 102728957 A CN102728957 A CN 102728957A
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- helical trajectory
- bombardment
- laser beam
- laser beams
- track
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Laser Beam Processing (AREA)
- Semiconductor Lasers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The present invention relates to a method for generating a laser beam irradiation trajectory for processing a semiconductor package, capable of automatically, accurately and easily generating a laser beam irradiation trajectory in a mold portion of the semiconductor package during manufacture of the semiconductor package. According to the present invention, the method for generating a laser beam irradiation trajectory for a semiconductor package-processing apparatus, which irradiates a laser beam onto the mold portion of the semiconductor package along a spiral trajectory to form via holes, comprises the steps of: enabling a controller of a laser beam irradiation apparatus, in which a plurality of spiral trajectory patterns are stored by types, to select one of the spiral trajectory pattern types; inputting information on the selected spiral trajectory pattern to generate a spiral trajectory; and inputting a laser beam irradiation condition.
Description
The application is to be February 5, application number in 2010 the dividing an application for the original bill application of " being used to generate the method for bombardment with laser beams track " that be 201080005123.4 (international application no is PCT/KR2010/000707) and denomination of invention the applying date.
Technical field
The present invention relates to a kind of bombardment with laser beams orbit generation method of handling semiconductor packages, more specifically say, relate to the generation method of the bombardment with laser beams track of making the semiconductor encapsulation, through this method, at stacked package type (PoP; Package on Package) etc. can automatically, accurately and easily generate in the manufacturing processing procedure of semiconductor encapsulation one point to a mould part of this semiconductor packages spiral bombardment with laser beams track.
Background technology
At present, according to the small size with various functions, multiduty development trend, such as mobile portable telephone, Portable internet apparatus and portable multimedia terminal, such as multicore sheet encapsulation (MCP; Multi Chip Package) and stacked package (PoP; Package on Package) the various semiconductor packagings of technology develop, and these technology can realize making device in light weight and that size is little, also can make the device of high power capacity and high integration simultaneously.
In they's technology; This stacked package (PoP) technology is a technology like this; Promptly pile up and wherein make up the encapsulation that an above semiconductor chip is arranged; Generally speaking, realize for being electrically connected through forming a plurality of soldered balls on the soldered ball that combines to form on the semiconductor-on-insulator encapsulation downside and the semiconductor packages upside once.
When these these upper and lower semiconductor packages of stacked package technology combination; If these two semiconductor packages are because of warpage (warpage) when there are differences; Then make these soldered balls of this semiconductor-on-insulator encapsulation combine to become difficult, and so to form the possibility of defective big with the accurate of these soldered balls of this time semiconductor packages.
At present; Make it through molded this time semiconductor packages in a molded step of making this time semiconductor packages, to form fully in this part place-concordant with a part-this solder ball pad; Thereby after making that warpage difference between these upper and lower semiconductor packages is reduced to minimum degree; Shown in Fig. 1 and 2 that so place attaches, through utilizing a bombardment with laser beams device 20, at a mould part 11 places of this semiconductor packages 10; In the part of each these solder ball pad 12, form a through hole (via hole) 13, thereby this solder ball pad 12 is exposed to the outside of this mould part 11.Afterwards, contact with these solder ball pads 12 on this time semiconductor packages 10 via these through holes 13, thereby this semiconductor-on-insulator encapsulates and is stacked on this time semiconductor packages through making these soldered balls in the encapsulation of this semiconductor-on-insulator.
Meanwhile; Through a method; Promptly along this laser beam of helical trajectory radiation; Evenly cut this mould part through this laser beam of radiation in a position that is complementary with each these solder ball pad, thereby in this mould part of this time semiconductor packages, form this through hole, will be reduced to minimum degree to the infringement of this solder ball pad through this laser beam simultaneously.A helical trajectory like this of this laser beam is at first drawn through CAD, and the digital information of this track is provided to a controller of this bombardment with laser beams device, is used in this through hole of formation all the time with fixing this laser beam of track radiation.
Yet, change if make kind or the size of making this semiconductor packages in the processing procedure in the semiconductor encapsulation, also need change this helical trajectory, in order to satisfy this kind or the size of this semiconductor packages.Yet; As previously mentioned; In related art techniques, because this helical trajectory of this laser beam is at first to be generated by CAD, and this digital information of this track is provided to a controller of this bombardment with laser beams device; So, all need repeat this helical trajectory and generate whenever as long as the kind of this semiconductor packages of being made changes.
Therefore, because this helical trajectory generates the cost plenty of time, so productivity ratio is low.
Summary of the invention
Technical problem
For solving these problems; A target of the present invention provides a kind of method of utilizing this laser beam to generate the bombardment with laser beams track that is used to form a through hole; Through this method; In manufacturing processing procedure such as this semiconductor packages of this stacked package type (PoP), be in a mould part of this semiconductor packages, to form a through hole, it can generate a bombardment with laser beams track quickly and easily.
Technical solution
For realizing these targets and other advantages; And according to this purpose of the present invention; As the concrete and generality is here described; Utilize that semiconductor encapsulation manufacturing machine-in order to form the method for a through hole-generations bombardment with laser beams track, this method comprises these steps: selection one pattern type in a plurality of helical trajectory pattern types that in a controller of a bombardment with laser beams device, store along the mould part of a helical trajectory radiation one laser beam to semiconductor encapsulation for it; Generate a helical trajectory through input with the relevant information of selected this helical trajectory pattern; And the input bombardment with laser beams condition relevant with this helical trajectory.
In another aspect of this invention; With semiconductor encapsulation manufacturing machine-its along the mould part of a helical trajectory radiation one laser beam to semiconductor encapsulation in order to form the method for a through hole-generation one bombardment with laser beams track; This method comprises these steps: import the information relevant with a segmented spiral pattern type in order to forming this helical trajectory, this helical trajectory spacing G that this segmented spiral pattern type forms has nothing in common with each other from one section to another section; And input laser beam radiation condition.
Advantageous effects
The present invention has following advantageous effects.Because operator selectable is selected this laser beam helical trajectory pattern and can be imported the information relevant with this spiral pattern and this bombardment with laser beams condition; So make the generation of this spiral pattern and the formation of this through hole to realize automatically; Even the size and the kind of this semiconductor packages possibly change when making; This operator also can generate this spiral pattern fast and accurately, therefore boosts productivity and treatment effeciency.
Description of drawings
Fig. 1 and Fig. 2 explain the plurality of sections of key component, and each shows the processing procedure that forms a through hole, and this through hole is to make in the processing procedure in a common stacked package semiconductor package to form through a mould part that makes directed semiconductor encapsulation.
Fig. 3 explains a flow chart, and it shows according to of the present invention one preferred specific embodiment for making these steps that the semiconductor encapsulation generates a method of a bombardment with laser beams track.
Be used for generating the equidistant helical trajectory pattern of this method of a bombardment with laser beams track in Fig. 4 key diagram 3 with equidistant spiral mode generation; Wherein Fig. 4 A does not have a counter clockwise direction and the equidistant helical trajectory pattern of a clockwise direction that profile is connected track separately with the 4B explanation, and Fig. 4 C each has a counter clockwise direction and the equidistant helical trajectory pattern of a clockwise direction that profile is connected track with the 4D explanation.
Fig. 5 explains the instance of cumulative type helical trajectory pattern, and it is that a gradual spiral mode through a method that is used for generating a bombardment with laser beams track among Fig. 3 generates.
Fig. 6 explains the decrescence instance of type helical trajectory pattern, and it is that a gradual spiral mode through a method that is used for generating a bombardment with laser beams track among Fig. 3 generates.
Fig. 7 explains the instance of segmented helical trajectory pattern, and it is that a segmented spiral mode through a method that is used for generating a bombardment with laser beams track among Fig. 3 generates.
Fig. 8 explains a flow chart, and it shows that another preferred specific embodiment manufacturing semiconductor encapsulation according to the present invention generates these steps of a method of a bombardment with laser beams track.
Fig. 9 explains other instances of segmented helical trajectory pattern, and it is through being used to generate the method generation of a bombardment with laser beams track among Fig. 8.
* main element symbol description *
10: semiconductor packages 11: mould part
12: solder ball pad 13: through hole
20: bombardment with laser beams device G: spacing
Is: the diameter Os of penetralia track: the diameter of most external track
OL: profile connects track G
Max: maximum spacing
G
Min: minimum spacing
The specific embodiment
Existing reference in detail these certain specific embodiments of the present invention, the instance of these certain specific embodiments is illustrated in these accompanying drawings.Any maybe part, all refer to these same or analogous parts in graphic to these components identical symbols at these.
Only for reference, be at a stacked package (PoP although following description relates to according to a method of the present invention-this method; Package on Package) semiconductor package is made and is generated a bombardment with laser beams track that is used to form a through hole in the processing procedure; This through hole make a solder ball pad from the mould part of semiconductor packages once expose to the open air-specific embodiment; But the present invention is not limited thereto; But can same or analogous mode be applied to all semiconductor packages manufacturing processing procedures, promptly laser beam is scheduled to form along a helical trajectory radiation in order to form one in each these semiconductor packages manufacturing processing procedure.
Fig. 3 explains a flow chart; This flow chart shows these steps of a method; This method is to generate the bombardment with laser beams track that is used to make the semiconductor encapsulation according to of the present invention one preferred specific embodiment, and the method comprising the steps of: select a pattern in a plurality of helical trajectory patterns that in a controller of a bombardment with laser beams device, store; Generate a helical trajectory through input with the relevant information of selected this helical trajectory pattern; And input and the relevant bombardment with laser beams condition of this helical trajectory that generates.
To describe each step in detail subsequently.
In this controller of this bombardment with laser beams device of this this laser beam of radiation, store and have a plurality of spiral pattern programs that are used to generate a laser beam helical trajectory.
This helical trajectory pattern that stores in this controller comprises: equidistant type pattern, and as shown in Figure 4 in each these pattern, from the inside end beginning, end to an outer end, the constant spacing G of this helical trajectory remains unchanged; Cumulative/as to subtract type helical trajectory pattern, in each these pattern, shown in Fig. 5 or 6,, end to an outer end from the inside end beginning, the spacing G of this helical trajectory increases gradually or reduces; And segmented helical trajectory pattern, as shown in Figure 7 in each these pattern, from one section to another the section, the spacing G of this helical trajectory has nothing in common with each other.
In a plurality of helical trajectory patterns, selecting in this step of a pattern; This operator selects one of these patterns to be used to generate corresponding helical trajectory; Promptly; Select these spacing mode to generate these spacing helical trajectories, select this gradual spiral mode to be used to generate that this is cumulative/spiral pattern that subtracts, and select this segmented spiral mode to be used to generate this segmented spiral pattern.
Then, this operator's input and the relevant information of this helical trajectory of hoping to generate according to selected this helical trajectory mode.
For example; If this operator generates from this helical trajectory pattern and selects these spacing spiral modes in the mode; Then this user imports these information; That is, the diameter Os of the most external track of the diameter Is of the penetralia track of a direction of this helical trajectory (clockwise or counterclockwise), this helical trajectory, this helical trajectory, and the spacing G of this helical trajectory.In addition, this operator also imports whether generate profile connection locus O L, and it is this a most external track and a circle that is used to connect this helical trajectory that this profile connects locus O L.Fig. 4 C explains that with these helical trajectories among the 4D wherein these profiles are connected the state that track has generated.It is will to be used in this mould part of this semiconductor packages, forming one and will to be the through hole of a complete circle for this profile of this helical trajectory of a complete circle as forming that this profile connects track.
If this operator generates from these helical trajectory patterns and selects this gradual spiral mode in the mode; Then this operator imports these information; Promptly; The diameter Is of the penetralia track of one direction of this helical trajectory (clockwise or counterclockwise), this helical trajectory, the diameter Os of the most external track of this helical trajectory, and the spacing G of this helical trajectory.In addition, this operator also imports this changes in spacing amount (variation) of this helical trajectory, the maximum spacing G of this helical trajectory
MaxMinimum spacing G with this helical trajectory
MinCertainly; Equally under this situation; Similar with aforesaid these spacing spiral modes; Whether preferred in addition this operator's input generates in order to confirm that a profile connects this profile connection locus O L whether locus O L generates, and it is this a most external track and a circle that is used to connect this helical trajectory that this profile connects locus O L.
This variable quantity according to this spacing of this helical trajectory; This helical trajectory that generates with this gradual spiral mode or become a shape like this; Promptly wherein when this track moves gradually laterally this spacing increase gradually, as shown in Figure 5, or become a shape like this; Promptly wherein when this track moves gradually laterally this spacing reduce gradually, as shown in Figure 6.
If this operator generates from these helical trajectory patterns and selects this segmented spiral mode in the mode; Then this operator imports these information; That is, the diameter Os of the most external track of the diameter Is of the penetralia track of a direction of this helical trajectory (clockwise or counterclockwise), this helical trajectory, this helical trajectory, and each section in spacing G, and the hop count of this helical trajectory.The information of these sections can be through considering this semiconductor packages the diameter etc. of this solder ball pad (see figure 2) be provided with.
For example; This helical trajectory has a shape like this, and promptly this spacing of wherein relative with this solder ball pad of this semiconductor packages 12 a central part office is dense, and this spacing of an outside office of this core is sparse; And this spacing of a most external office of this helical trajectory becomes dense; Shown in Fig. 7 A, 7B, 7E and 7F, or this spacing at part place, a bosom is sparse, and this spacing of an outside office of this bosom part is dense; And this spacing of an outside office of this helical trajectory becomes sparse, shown in Fig. 7 C, 7D, 7E and 7F.
In case the input of the trace information of selected this helical trajectory pattern is accomplished, this controller output of this bombardment with laser beams device is used to this operator and verifies whether its desired track generates with this helical trajectory that a watch-dog generates.
Then; This operator is provided with the bombardment with laser beams condition; Such as radiation direction of the bombardment with laser beams speed of this bombardment with laser beams device, laser beam density, this bombardment with laser beams number of times, this laser beam (inboard of this helical trajectory is to the outside certainly, or vice versa) etc.For example, for cutting this mould part 11 (seeing Fig. 1 and 2) or relative therewith part, this bombardment with laser beams speed can be set to low speed or this intensity of laser beam of enhancing in needs energy many places; For cutting this mould part 11, this bombardment with laser beams speed can be set to fast or this intensity of laser beam of reduction in needs little energy place.Certainly, some these bombardment with laser beams conditions can be imported in the step of this helical trajectory information of input.
After all these bombardment with laser beams conditions are set; This operation that then generates this helical trajectory is accomplished; This controller of this bombardment with laser beams device with the number of times that is provided with along this this laser beam of bombardment with laser beams track re-radiated that has generated, therefore this through hole 13 of formation in this mould part 11 (seeing Fig. 1 and 2) of this semiconductor packages.Under this situation; Although this bombardment with laser beams device can be from inboard to the outside of this helical trajectory of having generated along this this laser beam of helical trajectory radiation; But preferably this bombardment with laser beams device from this outside to this inboard of this helical trajectory of having generated along this this laser beam of helical trajectory radiation; Therefore form this through hole 13, in order to have the inside circumference that upwards enlarges.
Meanwhile, although this aforementioned specific embodiment suggestion also can generate different helical trajectories according to this number of repetition through forming this through hole along this laser beam of this same-handed track re-radiated that has generated.
For example; For the first time during bombardment with laser beams, only form these spacings or this progressive spacing helical trajectory at this middle body, the second time is during bombardment with laser beams; This end points of helical trajectory begins to form the reservation shape of this helical trajectory first time from this; And during bombardment with laser beams, this outermost portion that only concentrates on this helical trajectory forms this helical trajectory, is used for forming this through hole section piecemeal according to this number of repetition for the third time.
In addition, different therewith although this aforementioned specific embodiment advises before these bombardment with laser beams conditions of input, importing the information of this helical trajectory pattern, can at first import these bombardment with laser beams conditions, then import this information of this helical trajectory pattern.
In this method of a bombardment with laser beams track that generates this aforementioned specific embodiment, although these a plurality of helical trajectory patterns are stored in this controller, and this bombardment with laser beams track of generation of selected these helical trajectory patterns.Yet; As illustrated in another specific embodiment of the present invention among Fig. 8; Through store these helical trajectory patterns one of them, for example, default in this controller and to store this segmented spiral pattern; Then make this helical trajectory information and these bombardment with laser beams conditions directly imported, and need not to implement to select this step of the kind of this spiral pattern to become possibility.
Certainly; Equally in this specific embodiment; This operator imports these information; Promptly the diameter Os of the most external track of the diameter Is of the penetralia track of a direction of this helical trajectory (clockwise or counterclockwise), this helical trajectory, this helical trajectory, and the spacing G of this helical trajectory, together with the information relevant with section, these sections comprise the diameter of this solder ball pad (see figure 2) of this semiconductor packages.
In case accomplish the input of this trace information of this helical trajectory pattern; This operator exports this helical trajectory that has generated on a watch-dog; Whether the track of confirming an expectation generates; And these bombardment with laser beams conditions are set, such as radiation number of times of the bombardment with laser beams speed of this bombardment with laser beams device, laser beam intensity, this laser beam, the radiation direction of this laser beam (inboard of this helical trajectory to outside radiation certainly, or vice versa) etc.
Fig. 9 explains the instance of the segmented helical trajectory pattern that generates through the method that generates the bombardment with laser beams track among Fig. 8; Wherein Fig. 9 A explains this segmented helical trajectory pattern; This segmented helical trajectory pattern has: one first section (#1 section; #1section), this section matees with an outside of this soldered ball, and it forms with very dense spacing; One second section (the #2 section, #2section), this section is on this inboard of first section, and it is with the equidistant formation bigger than this spacing of first section; And one the 3rd section (the #3 section, #3section), this section is on this inboard of second section, and it is with the equidistant formation bigger than this spacing of second section.Fig. 9 B explanation has one the 4th section, and (the 4th section with equidistant formation for #4 section, this segmented helical trajectory pattern #4section), and it is in this outside of first section, and its spacing is greater than this spacing of first section of this segmented spiral pattern among Fig. 9 A.Except that these patterns illustrated in fig. 9, obviously can form various these segmented patterns.
For those of ordinary skill in the art, obviously do not depart from of the present invention should spirit and the prerequisite of scope under, can carry out various changes and variation to the present invention.Therefore, when changing with variation in the scope of these accompanying claims and equivalent thereof as if these, these changes of the present invention and variation are contained in the present invention.
Commercial Application
The present invention is used in the semiconductor encapsulation and makes the bombardment with laser beams track that generates this mould part that points to this semiconductor packages in the processing procedure automatically.
Claims (1)
1. bombardment with laser beams orbit generation method of handling semiconductor packages, make semiconductor encapsulation manufacturing machine along a mould part of a helical trajectory radiation one laser beam to said semiconductor packages in order to form a through hole, said method comprising the steps of:
(a) select a pattern type in a plurality of helical trajectory pattern types that in a controller of a bombardment with laser beams device, store;
(b) generate a helical trajectory through input with the relevant information of selected helical trajectory pattern; And
(c) the input bombardment with laser beams condition relevant with said helical trajectory.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090014698A KR101179983B1 (en) | 2009-02-23 | 2009-02-23 | Method for Generating Laser Beam Radiation Trajectories for Processing Semiconductor Packages |
| KR10-2009-0014698 | 2009-02-23 | ||
| CN2010800051234A CN102292797A (en) | 2009-02-23 | 2010-02-05 | Method for generating laser beam irradiation trajectory |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800051234A Division CN102292797A (en) | 2009-02-23 | 2010-02-05 | Method for generating laser beam irradiation trajectory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102728957A true CN102728957A (en) | 2012-10-17 |
| CN102728957B CN102728957B (en) | 2015-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210177966.3A Active CN102728957B (en) | 2009-02-23 | 2010-02-05 | The method of semiconductor packages and manufacture semiconductor packages |
| CN2010800051234A Pending CN102292797A (en) | 2009-02-23 | 2010-02-05 | Method for generating laser beam irradiation trajectory |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010800051234A Pending CN102292797A (en) | 2009-02-23 | 2010-02-05 | Method for generating laser beam irradiation trajectory |
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| Country | Link |
|---|---|
| KR (1) | KR101179983B1 (en) |
| CN (2) | CN102728957B (en) |
| TW (2) | TWI477341B (en) |
| WO (1) | WO2010095826A2 (en) |
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| CN104981317A (en) * | 2012-12-04 | 2015-10-14 | 埃瓦格股份公司 | Laser machining device and method for machining workpiece by using laser machining device |
| CN110385521A (en) * | 2019-08-29 | 2019-10-29 | 西安交通大学 | A kind of femtosecond laser processing device and method for the quick deep etching of silicon carbide |
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| CN105108338B (en) * | 2015-09-30 | 2017-03-22 | 深圳市联赢激光股份有限公司 | Method for controlling laser welding |
| CN108406141B (en) * | 2018-04-18 | 2024-05-03 | 西安中科微精光子科技股份有限公司 | Ultrafast laser micropore processing method and device based on optical coherence tomography |
| CN110153555A (en) * | 2019-06-18 | 2019-08-23 | 西安中科微精光子制造科技有限公司 | Laser machine control method, device and the electronic equipment of rotary-cut scanning track |
| KR102410304B1 (en) * | 2020-05-27 | 2022-06-17 | 최지훈 | The chip-rework apparatus |
| KR20220046364A (en) | 2020-10-07 | 2022-04-14 | 한미반도체 주식회사 | Laser processing method of semiconductor package |
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- 2010-02-05 CN CN201210177966.3A patent/CN102728957B/en active Active
- 2010-02-05 WO PCT/KR2010/000707 patent/WO2010095826A2/en active Application Filing
- 2010-02-05 CN CN2010800051234A patent/CN102292797A/en active Pending
- 2010-02-10 TW TW101119232A patent/TWI477341B/en active
- 2010-02-10 TW TW099104048A patent/TWI429496B/en active
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104981317A (en) * | 2012-12-04 | 2015-10-14 | 埃瓦格股份公司 | Laser machining device and method for machining workpiece by using laser machining device |
| EP2928635B1 (en) | 2012-12-04 | 2017-02-22 | Ewag AG | Laser machining device and method for machining a workpiece by using a laser machining device |
| US9770784B2 (en) | 2012-12-04 | 2017-09-26 | Ewag Ag | Laser machining device and method for machining a workpiece by using a laser machining device |
| DE102012111771B4 (en) * | 2012-12-04 | 2020-12-03 | Ewag Ag | Method for machining a workpiece using a laser machining device for manufacturing a cutting tool |
| CN110385521A (en) * | 2019-08-29 | 2019-10-29 | 西安交通大学 | A kind of femtosecond laser processing device and method for the quick deep etching of silicon carbide |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102728957B (en) | 2015-09-16 |
| WO2010095826A3 (en) | 2010-11-18 |
| TWI429496B (en) | 2014-03-11 |
| KR101179983B1 (en) | 2012-09-07 |
| TWI477341B (en) | 2015-03-21 |
| WO2010095826A2 (en) | 2010-08-26 |
| KR20100095735A (en) | 2010-09-01 |
| TW201032933A (en) | 2010-09-16 |
| TW201244862A (en) | 2012-11-16 |
| CN102292797A (en) | 2011-12-21 |
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