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CN102723293A - Etching-first and packaging-later manufacturing method for chip inversion single-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit - Google Patents

Etching-first and packaging-later manufacturing method for chip inversion single-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit Download PDF

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CN102723293A
CN102723293A CN2012101898944A CN201210189894A CN102723293A CN 102723293 A CN102723293 A CN 102723293A CN 2012101898944 A CN2012101898944 A CN 2012101898944A CN 201210189894 A CN201210189894 A CN 201210189894A CN 102723293 A CN102723293 A CN 102723293A
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CN102723293B (en
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王新潮
梁志忠
李维平
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Stats Chippac Semiconductor Jiangyin Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Abstract

本发明涉及一种芯片倒装单面三维线路先蚀后封制造方法及其封装结构,所述方法包括以下步骤:取金属基板;金属基板表面预镀铜;绿漆被覆;基板背面去除部分绿漆;电镀惰性金属线路层;电镀金属线路层;绿漆被覆;基板背面去除部分绿漆;电镀金属线路层;绿漆被覆;基板背面去除部分绿漆;覆上线路网板;金属化前处理;移除线路网板;电镀金属线路层;绿漆被覆;基板正面面去除部分绿漆;化学蚀刻;电镀金属线路层;装片及芯片底部填充;包封;基板背面开孔;清洗;植球;切割成品。本发明的有益效果是:降低了制造成本,提高了封装体的安全性和可靠性,减少了环境污染,能够真正做到高密度线路的设计和制造。

The invention relates to a manufacturing method of flip-chip single-sided three-dimensional circuit and its packaging structure. The method includes the following steps: taking a metal substrate; pre-plating copper on the surface of the metal substrate; coating with green paint; removing part of the green on the back of the substrate Paint; electroplating inert metal circuit layer; electroplating metal circuit layer; green paint covering; removing part of the green paint on the back of the substrate; electroplating metal circuit layer; green paint covering; removing part of the green paint on the back of the substrate; ;Remove the circuit board; electroplate metal circuit layer; green paint coating; remove part of the green paint on the front side of the substrate; chemical etching; electroplate metal circuit layer; chip loading and chip bottom filling; Balls; cut finished products. The beneficial effects of the invention are: the manufacturing cost is reduced, the safety and reliability of the packaging body are improved, the environmental pollution is reduced, and the design and manufacture of high-density circuits can be truly achieved.

Description

芯片倒装单面三维线路先蚀后封制造方法及其封装结构Flip chip single-sided three-dimensional circuit manufacturing method and packaging structure after etching first

技术领域 technical field

本发明涉及一种芯片倒装单面三维线路先蚀后封制造方法及其封装结构。属于半导体封装技术领域。 The invention relates to a chip flip-chip single-sided three-dimensional circuit manufacturing method and its packaging structure. It belongs to the technical field of semiconductor packaging.

背景技术 Background technique

传统的高密度基板封装结构的制造工艺流程如下所示: The manufacturing process flow of the traditional high-density substrate package structure is as follows:

步骤一、参见图53,取一玻璃纤维材料制成的基板, Step 1, referring to Figure 53, take a substrate made of glass fiber material,

步骤二、参见图54,在玻璃纤维基板上所需的位置上开孔, Step 2, see Figure 54, make holes on the required position on the glass fiber substrate,

步骤三、参见图55,在玻璃纤维基板的背面披覆一层铜箔, Step 3, see Figure 55, coat a layer of copper foil on the back of the glass fiber substrate,

步骤四、参见图56,在玻璃纤维基板打孔的位置填入导电物质, Step 4, see Figure 56, fill in the conductive material at the position where the glass fiber substrate is punched,

步骤五、参见图57,在玻璃纤维基板的正面披覆一层铜箔, Step 5, see Figure 57, coat a layer of copper foil on the front of the glass fiber substrate,

步骤六、参见图58,在玻璃纤维基板表面披覆光阻膜, Step 6, see Figure 58, coat the photoresist film on the surface of the glass fiber substrate,

步骤七、参见图59,将光阻膜在需要的位置进行曝光显影开窗, Step 7, see Figure 59, expose and develop the photoresist film at the required position to open the window,

步骤八、参见图60,将完成开窗的部分进行蚀刻, Step 8, see Figure 60, etch the part where the window is opened,

步骤九、参见图61,将基板表面的光阻膜剥除, Step 9, see Figure 61, peel off the photoresist film on the surface of the substrate,

步骤十、参见图62,在铜箔线路层的表面进行防焊漆(俗称绿漆)的披覆, Step 10, see Figure 62, apply solder resist paint (commonly known as green paint) on the surface of the copper foil circuit layer,

步骤十一、参见图63,在防焊漆需要进行后工序的装片以及打线键合的区域进行开窗, Step 11. Referring to Figure 63, open the window in the area where the solder resist paint needs to be installed in the post-process and wire bonded.

步骤十二、参见图64,在步骤十一进行开窗的区域进行电镀,相对形成基岛和引脚, Step 12, see Figure 64, perform electroplating on the area where the window is opened in step 11, and relatively form base islands and pins,

步骤十三、完成后续的装片、打线、包封、切割等相关工序。 Step thirteen, complete subsequent related processes such as film loading, wire bonding, encapsulation, and cutting.

上述传统高密度基板封装结构存在以下不足和缺陷: The above-mentioned traditional high-density substrate packaging structure has the following deficiencies and defects:

1、多了一层的玻璃纤维材料,同样的也多了一层玻璃纤维的成本; 1. There is an extra layer of glass fiber material, and also the cost of an extra layer of glass fiber;

2、因为必须要用到玻璃纤维,所以就多了一层玻璃纤维厚度约100~150μm的厚度空间; 2. Because glass fiber must be used, there is an extra layer of glass fiber thickness of about 100~150μm;

3、玻璃纤维本身就是一种发泡物质,所以容易因为放置的时间与环境吸入水分以及湿气,直接影响到可靠性的安全能力或是可靠性等级; 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

4、玻璃纤维表面被覆了一层约50~100μm的铜箔金属层厚度,而金属层线路与线路的蚀刻距离也因为蚀刻因子的特性只能做到50~100μm的蚀刻间隙(蚀刻因子: 最好制做的能力是蚀刻间隙约等同于被蚀刻物体的厚度,参见图65),所以无法真正的做到高密度线路的设计与制造; 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (etching factor: most The ability of good manufacturing is that the etching gap is approximately equal to the thickness of the object to be etched, see Figure 65), so it is impossible to truly design and manufacture high-density circuits;

5、因为必须要使用到铜箔金属层,而铜箔金属层是采用高压粘贴的方式,所以铜箔的厚度很难低于50μm的厚度,否则就很难操作如不平整或是铜箔破损或是铜箔延展移位等等; 5. Because the copper foil metal layer must be used, and the copper foil metal layer is pasted by high pressure, so the thickness of the copper foil is difficult to be less than 50μm, otherwise it will be difficult to operate such as unevenness or copper foil damage Or the extension and displacement of copper foil, etc.;

6、也因为整个基板材料是采用玻璃纤维材料,所以明显的增加了玻璃纤维层的厚度100~150μm,无法真正的做到超薄的封装; 6. Also because the entire substrate material is made of glass fiber material, the thickness of the glass fiber layer is obviously increased by 100~150 μm, and it is impossible to achieve ultra-thin packaging;

7、传统玻璃纤维加贴铜箔的工艺技术因为材质特性差异很大(膨胀系数),在恶劣环境的工序中容易造成应力变形,直接的影响到元件装载的精度以及元件与基板粘着性与可靠性。 7. Due to the large difference in material properties (expansion coefficient), the traditional glass fiber plus copper foil technology is easy to cause stress deformation in the harsh environment process, which directly affects the accuracy of component loading and the adhesion and reliability of components and substrates. sex.

发明内容 Contents of the invention

本发明的目的在于克服上述不足,提供一种芯片倒装单面三维线路先蚀后封制造方法及其封装结构,其工艺简单,不需使用玻璃纤维层,减少了制作成本,提高了封装体的安全性和可靠性,减少了玻璃纤维材料带来的环境污染,而且金属基板线路层采用的是电镀方法,能够真正做到高密度线路的设计和制造。 The purpose of the present invention is to overcome the above disadvantages, to provide a flip-chip single-sided three-dimensional circuit manufacturing method and packaging structure after etching, the process is simple, no need to use glass fiber layer, reducing production costs, improving packaging The safety and reliability of the circuit reduce the environmental pollution caused by the glass fiber material, and the metal substrate circuit layer adopts the electroplating method, which can truly achieve the design and manufacture of high-density circuits.

本发明的目的是这样实现的:一种芯片倒装单面三维线路先蚀后封制造方法,所述方法包括以下步骤: The purpose of the present invention is achieved in this way: a method for manufacturing a flip-chip single-sided three-dimensional circuit that is etched first and then sealed, said method comprising the following steps:

步骤一、取金属基板 Step 1. Take the metal substrate

步骤二、金属基板表面预镀铜 Step 2. Pre-plating copper on the surface of the metal substrate

在金属基板表面镀一层铜材薄膜; Coating a layer of copper film on the surface of the metal substrate;

步骤三、绿漆被覆 Step 3, green paint coating

在完成预镀铜材薄膜的金属基板正面及背面分别进行绿漆的被覆; Green paint is applied to the front and back of the metal substrate with the pre-plated copper film;

步骤四、金属基板背面去除部分绿漆 Step 4. Remove part of the green paint on the back of the metal substrate

利用曝光显影设备将步骤三完成绿漆被覆的金属基板背面进行图形曝光、显影与去除部分图形绿漆; Use the exposure and development equipment to expose, develop and remove part of the graphic green paint on the back of the metal substrate coated with green paint in step 3;

步骤五、电镀惰性金属线路层 Step 5. Electroplating inert metal circuit layer

在步骤四中金属基板背面去除部分绿漆的区域内电镀上惰性金属线路层; Electroplating an inert metal circuit layer in the area where part of the green paint is removed on the back of the metal substrate in step 4;

步骤六、电镀金属线路层 Step 6. Plating metal circuit layer

在步骤五中的惰性金属线路层表面镀上多层或是单层金属线路层;  On the surface of the inert metal circuit layer in step 5, a multi-layer or single-layer metal circuit layer is plated;

步骤七、绿漆被覆 Step 7. Green paint coating

在金属基板的背面进行绿漆的被覆; Covering the back of the metal substrate with green paint;

步骤八、金属基板背面去除部分绿漆 Step 8. Remove part of the green paint on the back of the metal substrate

利用曝光显影设备将步骤四完成绿漆被覆的金属基板背面进行图形曝光、显影与去除部分图形绿漆; Use the exposure and development equipment to perform graphic exposure, development and removal of part of the graphic green paint on the back of the metal substrate covered with green paint in step 4;

步骤九、电镀金属线路层 Step 9. Plating metal circuit layer

在步骤六中的金属线路层表面镀上多层或是单层金属线路层; Plating a multi-layer or single-layer metal circuit layer on the surface of the metal circuit layer in step 6;

步骤十、绿漆被覆 Step 10. Green paint coating

在金属基板的背面进行绿漆的被覆; Covering the back of the metal substrate with green paint;

步骤十一、金属基板背面去除部分绿漆 Step 11. Remove part of the green paint on the back of the metal substrate

利用曝光显影设备将步骤十完成绿漆被覆的金属基板背面进行图形曝光、显影与去除部分图形绿漆; Exposing, developing and removing part of the graphic green paint on the back of the metal substrate coated with green paint in step ten by using exposure and developing equipment;

步骤十二、覆上线路网板 Step 12. Cover the circuit board

在金属基板背面覆上线路网板; Cover the circuit board on the back of the metal substrate;

步骤十三、金属化前处理 Step 13, pre-metallization treatment

在基板背面进行电镀金属线路层的金属化前处理; Pre-metallization of the electroplated metal circuit layer on the back of the substrate;

步骤十四、移除线路网板 Step 14. Remove the circuit board

将步骤十二的线路网板移除; Remove the circuit board in step 12;

步骤十五、电镀金属线路层 Step 15. Electroplating the metal circuit layer

在金属基板背面镀上多层或是单层金属线路层;  Coating multi-layer or single-layer metal circuit layers on the back of the metal substrate;

步骤十六、绿漆被覆 Step sixteen, green paint coating

在金属基板的背面进行绿漆的被覆; Covering the back of the metal substrate with green paint;

步骤十七、金属基板正面面去除部分绿漆 Step 17. Remove part of the green paint on the front surface of the metal substrate

利用曝光显影设备将金属基板正面进行图形曝光、显影与去除部分图形绿漆; Use exposure and development equipment to expose, develop and remove part of the graphic green paint on the front of the metal substrate;

步骤十八、化学蚀刻 Step 18. Chemical Etching

将步骤十七中完成曝光显影的区域进行化学蚀刻; Perform chemical etching on the area where exposure and development have been completed in step seventeen;

步骤十九、电镀金属线路层 Step 19. Electroplating metal circuit layer

在惰性金属线路层表面镀上单层或是多层的金属线路层,金属电镀完成后即在金属基板上形成相应的引脚或基岛和引脚或基岛、引脚和静电释放圈; A single or multi-layer metal circuit layer is plated on the surface of the inert metal circuit layer. After the metal plating is completed, corresponding pins or base islands and pins or base islands, pins and electrostatic discharge rings are formed on the metal substrate;

步骤二十、装片及芯片底部填充 Step 20, chip loading and chip bottom filling

在步骤十九的引脚正面或基岛正面和引脚正面倒装芯片及芯片底部填充环氧树脂; Fill epoxy resin on the front side of the pin or the front side of the base island and the front side of the pin flip chip and the bottom of the chip in step 19;

步骤二十一、包封 Step 21. Encapsulation

将完成装片打线后的金属基板正面进行塑封料包封工序; Carry out the plastic encapsulation process on the front of the metal substrate after chip loading and wiring;

步骤二十二、金属基板背面开孔 Step 22. Open holes on the back of the metal substrate

在金属基板背面对后续要植金属球的区域进行开孔作业; On the back of the metal substrate, drill holes in the area where metal balls will be planted;

步骤二十三、清洗 Step twenty-three, cleaning

在金属基板背面开孔处进行氧化物质、有机物质的清洗; Cleaning of oxidized substances and organic substances at the openings on the back of the metal substrate;

步骤二十四、植球 Step twenty-four, planting the ball

在金属基板背面绿漆开孔处内植入金属球; Implant metal balls in the green paint openings on the back of the metal substrate;

步骤二十五、切割成品 Step 25. Cut the finished product

将步骤二十四完成植球的半成品进行切割作业,使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来,制得单芯片倒装先蚀刻后封装基岛埋入封装结构,可采用常规的钻石刀片以及常规的切割设备即可。 Cut the semi-finished products that have been ball-planted in step 24, so that the plastic package modules that were originally integrated in the form of an array assembly and contain chips are cut and separated one by one, and the single-chip flip chip is etched first and then packaged. The base island is embedded in the packaging structure, and conventional diamond blades and conventional cutting equipment can be used.

本发明还提供一种芯片倒装单面三维线路先蚀后封封装结构,它包括引脚,所述引脚正面通过导电或不导电粘结物质设置有芯片,所述芯片正面与引脚正面之间用金属线相连接,所述引脚与引脚之间的区域、引脚上部的区域、引脚下部的区域以及芯片和金属线外均包封有塑封料和绿漆,所述引脚背面的绿漆上开设有小孔,所述小孔与引脚背面相连通,所述小孔内设置有金属球,所述金属球与引脚背面相接触。 The present invention also provides a flip-chip single-sided three-dimensional circuit packaging structure that is etched first and then sealed. It includes pins, and the front of the pins is provided with a chip through a conductive or non-conductive adhesive material. The front of the chip is connected to the front of the pins. The area between the pins, the area above the pins, the area below the pins, as well as the chip and the metal wires are all encapsulated with plastic encapsulant and green paint. A small hole is opened on the green paint on the back of the foot, and the small hole communicates with the back of the pin, and a metal ball is arranged in the small hole, and the metal ball is in contact with the back of the pin.

所述步骤二十三对金属基板背面绿漆开孔处进行清洗同时进行金属保护层被覆。 The step 23 cleans the openings of the green paint on the back of the metal substrate and covers the metal protective layer at the same time.

所述封装结构包括基岛,所述芯片的正面倒装于基岛正面和引脚正面,所述芯片底部与基岛正面和引脚正面之间设置有底部填充胶。 The packaging structure includes a base island, the front of the chip is flip-chip on the front of the base island and the front of the pins, and an underfill glue is arranged between the bottom of the chip and the front of the base island and the front of the pins.

与现有技术相比,本发明具有以下有益效果: Compared with the prior art, the present invention has the following beneficial effects:

1、本发明不需要使用玻璃纤维层,所以可以减少玻璃纤维层所带来的成本; 1. The present invention does not need to use the glass fiber layer, so the cost brought by the glass fiber layer can be reduced;

2、本发明没有使用玻璃纤维层的发泡物质,所以可靠性的等级可以再提高,相对对封装体的安全性就会提高; 2. The present invention does not use the foaming material of the glass fiber layer, so the reliability level can be further improved, and the relative safety of the package will be improved;

3、本发明不需要使用玻璃纤维层物质,所以就可以减少玻璃纤维材料所带来的环境污染; 3. The present invention does not need to use glass fiber material, so the environmental pollution caused by glass fiber material can be reduced;

4、本发明的三维金属基板线路层所采用的是电镀方法,而电镀层的总厚度约在10~15μm,而线路与线路之间的间隙可以轻松的达到25μm以下的间隙,所以可以真正地做到高密度內引腳線路平铺的技术能力; 4. The circuit layer of the three-dimensional metal substrate of the present invention adopts the electroplating method, and the total thickness of the electroplating layer is about 10-15 μm, and the gap between the lines can easily reach a gap below 25 μm, so it can be truly The technical ability to achieve high-density internal pin line tiling;

5、本发明的三维金属基板因采用的是金属层电镀法,所以比玻璃纤维高压铜箔金属层的工艺来得简单,且不会有金属层因为高压产生金属层不平整、金属层破损以及金属层延展移位的不良或困惑; 5. The three-dimensional metal substrate of the present invention adopts the metal layer electroplating method, so it is simpler than the process of glass fiber high-voltage copper foil metal layer, and there will be no metal layer unevenness, metal layer damage and metal layer due to high pressure. Poor or confused layer extension and displacement;

6、本发明的三维金属基板线路层是在金属基材的表面进行金属电镀,所以材质特性基本相同,所以镀层线路与金属基材的内应力基本相同,可以轻松的进行恶劣环境的后工程(如高温共晶装片、高温锡材焊料装片以及高温被动元件的表面贴装工作)而不容易产生应力变形。 6. The three-dimensional metal substrate circuit layer of the present invention is metal electroplated on the surface of the metal substrate, so the material properties are basically the same, so the internal stress of the plating circuit and the metal substrate is basically the same, and the post-engineering in harsh environments can be easily carried out ( Such as high-temperature eutectic chip mounting, high-temperature tin solder chip mounting, and surface mount work of high-temperature passive components) are not prone to stress deformation.

附图说明 Description of drawings

图1~图25为本发明芯片倒装单面三维线路先蚀后封制作方法实施例1的各工序示意图。 1 to 25 are schematic diagrams of each process in Embodiment 1 of the manufacturing method of flip-chip single-sided three-dimensional circuit of the present invention, which is etched first and then sealed.

图26为本发明芯片倒装单面三维线路先蚀后封封装结构实施例1的结构示意图。 Fig. 26 is a structural schematic diagram of Embodiment 1 of the packaging structure of flip-chip single-sided three-dimensional circuit etched first and then sealed according to the present invention.

图27~图51为本发明芯片倒装单面三维线路先蚀后封制作方法实施例2的各工序示意图。 27 to 51 are schematic diagrams of each process in Embodiment 2 of the manufacturing method of flip-chip single-sided three-dimensional circuit of the present invention, which is etched first and then sealed.

图52为本发明芯片倒装单面三维线路先蚀后封封装结构实施例2的结构示意图。 Fig. 52 is a structural schematic diagram of Embodiment 2 of the packaging structure of flip-chip single-sided three-dimensional circuit etched first and then sealed according to the present invention.

图53~图64为传统的高密度基板封装结构的制造工艺流程图。 53 to 64 are flow charts of the manufacturing process of the traditional high-density substrate packaging structure.

图65为玻璃纤维表面铜箔金属层的蚀刻状况示意图。 Figure 65 is a schematic diagram of the etching status of the copper foil metal layer on the surface of the glass fiber.

其中:  in:

金属基板1 Metal Substrate 1

铜材薄膜2 Copper film 2

绿漆3 Green paint 3

惰性金属线路层4 Inert metal wiring layer 4

金属线路层5 metal line layer 5

线路网板6 Circuit board 6

金属化前处理层7 Metallization pretreatment layer 7

底部填充胶8 Underfill 8

芯片9 Chip 9

塑封料10 Plastic compound 10

小孔11 Small hole 11

金属保护层12 Metal protection layer 12

金属球13 metal ball 13

基岛14 Key Island 14

引脚15。 pin 15.

具体实施方式 Detailed ways

本发明一种芯片倒装单面三维线路先蚀后封制造方法及其封装结构如下: A manufacturing method of a flip-chip single-sided three-dimensional circuit of the present invention is etched first and then sealed, and its packaging structure is as follows:

实施例一、无基岛 Embodiment 1, no base island

步骤一、取金属基板 Step 1. Take the metal substrate

参见图1,取一片厚度合适的金属基板,金属基板的材质可以依据芯片的功能与特性进行变换,例如:铜材、铁材、镍铁材、锌铁材等。 Referring to Figure 1, take a metal substrate with a suitable thickness. The material of the metal substrate can be changed according to the function and characteristics of the chip, such as copper, iron, nickel-iron, zinc-iron, etc.

步骤二、金属基板表面预镀铜 Step 2. Pre-plating copper on the surface of the metal substrate

参见图2,在金属基板表面镀一层铜材薄膜, 目的是为后续电镀做基础。(电镀的方式可以采用化学镀或是电解电镀)。 Referring to Figure 2, a layer of copper film is plated on the surface of the metal substrate to lay the foundation for subsequent electroplating. (The way of electroplating can be electroless plating or electrolytic plating).

步骤三、绿漆被覆 Step 3, green paint coating

参见图3,在完成预镀铜材薄膜的金属基板的正面及背面分别进行绿漆的被覆,以保护后续的电镀金属层工艺作业。 Referring to FIG. 3 , green paint is applied to the front and back of the metal substrate on which the pre-plated copper film is completed, so as to protect the subsequent electroplating metal layer process.

步骤四、金属基板背面去除部分绿漆 Step 4. Remove part of the green paint on the back of the metal substrate

参见图4,利用曝光显影设备将步骤三完成绿漆被覆的金属基板背面进行图形曝光、显影与去除部分图形绿漆,以露出金属基板背面后续需要进行电镀的区域图形。 Referring to Figure 4, use the exposure and development equipment to expose, develop and remove part of the graphic green paint on the back of the metal substrate covered with green paint in step 3, so as to expose the pattern of the area on the back of the metal substrate that needs to be electroplated.

步骤五、电镀惰性金属线路层 Step 5. Electroplating inert metal circuit layer

参见图5,在步骤四中金属基板背面去除部分绿漆的区域内电镀上惰性金属线路层, 作为后续蚀刻工作的阻挡层,惰性金属可采用镍或钛或铜,电镀方式可以是化学电镀或是电解电镀方式。 Referring to Figure 5, an inert metal circuit layer is electroplated in the area where part of the green paint is removed on the back of the metal substrate in step 4. As a barrier layer for subsequent etching work, the inert metal can be nickel, titanium or copper, and the electroplating method can be electroless plating or It is an electrolytic plating method.

步骤六、电镀金属线路层 Step 6. Plating metal circuit layer

参见图6,在步骤五中的惰性金属线路层表面镀上多层或是单层金属线路层,所述金属线路层可采用金镍、铜镍金、铜镍钯金、钯金、铜材中的一种或者多种,电镀方式可以是化学电镀也可以是电解电镀的方式。 Referring to Fig. 6, multi-layer or single-layer metal circuit layers are plated on the surface of the inert metal circuit layer in step five, and the metal circuit layer can be made of gold-nickel, copper-nickel-gold, copper-nickel-palladium-gold, palladium-gold, copper One or more of them, the electroplating method can be electroless plating or electrolytic plating.

步骤七、绿漆被覆 Step 7. Green paint coating

参见图7,在金属基板的背面进行绿漆的被覆,以保护后续的电镀金属层工艺作业。 Referring to FIG. 7 , green paint is applied on the back of the metal substrate to protect the subsequent electroplating metal layer process.

步骤八、金属基板背面去除部分绿漆 Step 8. Remove part of the green paint on the back of the metal substrate

参见图8,利用曝光显影设备将步骤四完成绿漆被覆的金属基板背面进行图形曝光、显影与去除部分图形绿漆,以露出金属基板背面后续需要进行电镀的区域图形。 Referring to FIG. 8 , use the exposure and developing equipment to expose, develop and remove part of the patterned green paint on the back of the metal substrate coated with green paint in step 4, so as to expose the pattern of the area on the back of the metal substrate that needs to be electroplated.

步骤九、电镀金属线路层 Step 9. Plating metal circuit layer

参见图9,在步骤六中的金属线路层表面镀上多层或是单层金属线路层,所述金属线路层可采用金镍、铜镍金、铜镍钯金、钯金、铜材中的一种或者多种,电镀方式可以是化学电镀也可以是电解电镀的方式。 Referring to Fig. 9, a multi-layer or a single-layer metal circuit layer is plated on the surface of the metal circuit layer in step six, and the metal circuit layer can be made of gold-nickel, copper-nickel-gold, copper-nickel-palladium-gold, palladium-gold, or copper. One or more of them, the electroplating method can be electroless plating or electrolytic plating.

步骤十、绿漆被覆 Step 10. Green paint coating

参见图10,在金属基板的背面进行绿漆的被覆,以保护后续的电镀金属层工艺作业。 Referring to FIG. 10 , green paint is applied on the back of the metal substrate to protect the subsequent electroplating metal layer process.

步骤十一、金属基板背面去除部分绿漆 Step 11. Remove part of the green paint on the back of the metal substrate

参见图11,利用曝光显影设备将步骤十完成绿漆被覆的金属基板背面进行图形曝光、显影与去除部分图形绿漆,以露出金属基板背面后续需要进行电镀的区域图形。 Referring to FIG. 11 , use exposure and developing equipment to expose, develop and remove part of the graphic green paint on the back of the metal substrate covered with green paint in step ten, so as to expose the pattern of the area on the back of the metal substrate that needs to be electroplated.

步骤十二、覆上线路网板 Step 12. Cover the circuit board

参见图12,在金属基板背面覆上线路网板。 Referring to Fig. 12, the circuit board is covered on the back of the metal substrate.

步骤十三、金属化前处理 Step 13, pre-metallization treatment

参见图13,在基板背面进行电镀金属线路层的金属化前处理,金属化前处理可用涂布方法(喷洒方式、印刷方式、淋涂方式、浸泡的方式等)。 Referring to Figure 13, the metallization pretreatment of the electroplated metal circuit layer is performed on the back of the substrate, and the metallization pretreatment can be applied by coating methods (spraying, printing, shower coating, immersion, etc.).

步骤十四、移除线路网板 Step 14. Remove the circuit board

参见图14,将步骤十二的线路网板移除。 Referring to Figure 14, remove the circuit board in step 12.

步骤十五、电镀金属线路层 Step 15. Electroplating the metal circuit layer

参见图15,在金属基板背面镀上多层或是单层金属线路层,所述金属线路层可采用金镍、铜镍金、铜镍钯金、钯金、铜材中的一种或者多种,电镀方式可以是化学电镀也可以是电解电镀的方式。 Referring to Figure 15, a multi-layer or single-layer metal circuit layer is plated on the back of the metal substrate. The metal circuit layer can be one or more of gold-nickel, copper-nickel-gold, copper-nickel-palladium-gold, palladium-gold, and copper. One, the electroplating method can be chemical plating or electrolytic plating.

步骤十六、绿漆被覆 Step sixteen, green paint coating

参见图16,在金属基板的背面进行绿漆的被覆,以便将金属线路层包封。 Referring to FIG. 16 , green paint is applied on the back of the metal substrate so as to encapsulate the metal circuit layer.

步骤十七、金属基板正面面去除部分绿漆 Step 17. Remove part of the green paint on the front surface of the metal substrate

参见图11,利用曝光显影设备将金属基板正面进行图形曝光、显影与去除部分图形绿漆,以露出金属基板正面后续需要进行电镀的区域图形。 Referring to FIG. 11 , the exposure and development equipment is used to expose, develop and remove part of the graphic green paint on the front of the metal substrate, so as to expose the pattern of the area on the front of the metal substrate that needs to be electroplated.

步骤十八、化学蚀刻 Step 18. Chemical Etching

参见图18,将步骤十七中完成曝光显影的区域进行化学蚀刻,化学蚀刻直至惰性金属线路层为止,蚀刻药水可以采用氯化铜或是氯化铁。 Referring to FIG. 18 , perform chemical etching on the exposed and developed area in step seventeen until the inert metal circuit layer is reached. The etching solution can be copper chloride or ferric chloride.

步骤十九、电镀金属线路层 Step 19. Electroplating metal circuit layer

参见图19,在惰性金属线路层表面镀上单层或是多层的金属线路层,金属电镀完成后即在金属基板上形成相应的引脚,镀层种类可以是铜镍金、铜镍银、钯金、金或铜等,电镀方法可以是化学电镀或是电解电镀。 Referring to Figure 19, a single-layer or multi-layer metal circuit layer is plated on the surface of the inert metal circuit layer. After the metal plating is completed, corresponding pins are formed on the metal substrate. The type of plating can be copper-nickel-gold, copper-nickel-silver, Palladium gold, gold or copper, etc., the electroplating method can be electroless plating or electrolytic plating.

步骤二十、装片及芯片底部填充 Step 20, chip loading and chip bottom filling

参见图20,在步骤十九的引脚正面倒装芯片及芯片底部填充环氧树脂。 Referring to FIG. 20 , in the nineteenth step, the front flip chip of the pins and the bottom of the chip are filled with epoxy resin.

步骤二十一、包封 Step 21. Encapsulation

参见图21,将完成装片打线后的金属基板正面进行塑封料包封工序,目的是利用环氧树脂将芯片以及金属线进行固定与保护,包封方法采用模具灌胶、喷涂方式或刷膠方式进行,塑封料可以采用有填料或是无填料的环氧树脂。 Referring to Figure 21, the front side of the metal substrate after chip mounting and wire bonding is subjected to a plastic encapsulation process. The purpose is to use epoxy resin to fix and protect the chip and metal wires. The encapsulation method adopts mold filling, spraying or brushing. The molding compound can be filled or unfilled epoxy resin.

步骤二十二、金属基板背面开孔 Step 22. Open holes on the back of the metal substrate

参见图22,在金属基板背面进行后续要植金属球的区域进行开孔作业,可以采用干式激光烧结或是湿式化学腐蚀的方法进行开孔。 Referring to Fig. 22, holes are drilled on the back of the metal substrate in the area where metal balls are to be planted, and holes can be drilled by dry laser sintering or wet chemical etching.

步骤二十三、清洗 Step twenty-three, cleaning

参见图23,在金属基板背面绿漆开孔处进行氧化物质、有机物质的清洗,同时可进行金属保护层的被覆,金属保护层采用抗氧化材料。 Referring to Figure 23, cleaning of oxidized substances and organic substances is carried out at the openings of the green paint on the back of the metal substrate, and at the same time, the coating of the metal protective layer can be carried out, and the metal protective layer is made of anti-oxidation material.

步骤二十四、植球 Step twenty-four, planting the ball

参见图24,在金属基板背面开孔处内植入金属球,使金属球与引脚背面相接触,可以采用常规的植球机或是采用金属膏印刷再经高温溶解之后即可形成球状体,金属球的材料可以是纯锡或锡合金。 Referring to Figure 24, metal balls are implanted in the holes on the back of the metal substrate so that the metal balls are in contact with the back of the pins. A conventional ball planting machine or a metal paste can be used to print and dissolve at high temperature to form a spherical body. , the material of the metal ball can be pure tin or tin alloy.

步骤二十五、切割成品 Step 25. Cut the finished product

参见图25,将步骤二十四完成植球的半成品进行切割作业,使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来,制得单芯片倒装先蚀刻后封装基岛埋入封装结构,可采用常规的钻石刀片以及常规的切割设备即可。 Referring to Figure 25, the semi-finished product that has completed the ball planting in step 24 is cut, so that the plastic package modules that were originally integrated in the form of an array assembly and contain chips are cut and separated one by one to obtain a single chip flip chip The base island is embedded in the packaging structure after etching first, and conventional diamond blades and conventional cutting equipment can be used.

如图26所示,本发明还提供一种芯片倒装单面三维线路先蚀后封的封装结构,所述封装结构包括引脚15,所述芯片9的正面倒装于引脚15正面,所述芯片9底部与引脚15正面之间设置有底部填充胶8,所述引脚15与引脚15之间的区域、引脚15上部的区域、引脚15下部的区域以及芯片9外均包封有绿漆3和塑封料10,所述引脚15背面的绿漆3上开设有小孔11,所述小孔11与引脚15背面相连通,所述小孔11内设置有金属球13,所述金属球13与引脚15背面之间设置有金属保护层12,所述金属球13采用锡或锡合金材料。 As shown in FIG. 26 , the present invention also provides a packaging structure in which a flip-chip single-sided three-dimensional circuit is etched first and then sealed. The packaging structure includes pins 15, and the front of the chip 9 is flip-chip on the front of the pins 15. Underfill glue 8 is arranged between the bottom of the chip 9 and the front of the pin 15, the area between the pin 15 and the pin 15, the area on the upper part of the pin 15, the area on the lower part of the pin 15, and the area outside the chip 9. Both are encapsulated with green paint 3 and molding compound 10, the green paint 3 on the back of the pin 15 is provided with a small hole 11, the small hole 11 communicates with the back of the pin 15, and the small hole 11 is provided with A metal ball 13, a metal protection layer 12 is provided between the metal ball 13 and the back of the pin 15, and the metal ball 13 is made of tin or tin alloy material.

实施例二、有基岛 Embodiment 2, there is base island

步骤一、取金属基板 Step 1. Take the metal substrate

参见图27,取一片厚度合适的金属基板,金属基板的材质可以依据芯片的功能与特性进行变换,例如:铜材、铁材、镍铁材、锌铁材等。 Referring to Figure 27, take a metal substrate with an appropriate thickness. The material of the metal substrate can be changed according to the functions and characteristics of the chip, such as copper, iron, nickel-iron, zinc-iron, etc.

步骤二、金属基板表面预镀铜 Step 2. Pre-plating copper on the surface of the metal substrate

参见图28,在金属基板表面镀一层铜材薄膜, 目的是为后续电镀做基础。(电镀的方式可以采用化学电镀或是电解电镀)。 Referring to Figure 28, a layer of copper film is plated on the surface of the metal substrate to lay the foundation for subsequent electroplating. (The way of electroplating can be electroless plating or electrolytic plating).

步骤三、绿漆被覆 Step 3, green paint coating

参见图29,在完成预镀铜材薄膜的金属基板的正面及背面分别进行绿漆的被覆,以保护后续的电镀金属层工艺作业。 Referring to FIG. 29 , green paint is applied to the front and back of the metal substrate on which the pre-plated copper film is completed, so as to protect the subsequent electroplating metal layer process.

步骤四、金属基板背面去除部分绿漆 Step 4. Remove part of the green paint on the back of the metal substrate

参见图30,利用曝光显影设备将步骤三完成绿漆被覆的金属基板背面进行图形曝光、显影与去除部分图形绿漆,以露出金属基板背面后续需要进行电镀的区域图形。 Referring to FIG. 30 , use the exposure and developing equipment to expose, develop and remove part of the graphic green paint on the back of the metal substrate coated with green paint in step 3, so as to expose the pattern of the area on the back of the metal substrate that needs to be electroplated.

步骤五、电镀惰性金属线路层 Step 5. Electroplating inert metal circuit layer

参见图31,在步骤四中金属基板背面去除部分绿漆的区域内电镀上惰性金属线路层, 作为后续蚀刻工作的阻挡层,惰性金属可采用镍或钛或铜,电镀方式可以是化学电镀或是电解电镀方式。 Referring to Figure 31, an inert metal circuit layer is electroplated in the area where part of the green paint is removed on the back of the metal substrate in step 4. As a barrier layer for subsequent etching work, the inert metal can be nickel, titanium or copper, and the electroplating method can be electroless plating or It is an electrolytic plating method.

步骤六、电镀金属线路层 Step 6. Plating metal circuit layer

参见图32,在步骤五中的惰性金属线路层表面镀上多层或是单层金属线路层,所述金属线路层可采用金镍、铜镍金、铜镍钯金、钯金、铜材中的一种或者多种,电镀方式可以是化学电镀也可以是电解电镀的方式。 Referring to Fig. 32, a multi-layer or single-layer metal circuit layer is plated on the surface of the inert metal circuit layer in step five, and the metal circuit layer can be made of gold nickel, copper nickel gold, copper nickel palladium gold, palladium gold, copper material One or more of them, the electroplating method can be electroless plating or electrolytic plating.

步骤七、绿漆被覆 Step 7. Green paint coating

参见图33,在金属基板的背面进行绿漆的被覆,以保护后续的电镀金属层工艺作业。 Referring to FIG. 33 , green paint is applied on the back of the metal substrate to protect the subsequent electroplating metal layer process.

步骤八、金属基板背面去除部分绿漆 Step 8. Remove part of the green paint on the back of the metal substrate

参见图34,利用曝光显影设备将步骤四完成绿漆被覆的金属基板背面进行图形曝光、显影与去除部分图形绿漆,以露出金属基板背面后续需要进行电镀的区域图形。 Referring to FIG. 34 , use the exposure and developing equipment to expose, develop and remove part of the patterned green paint on the back of the metal substrate covered with green paint in step 4, so as to expose the pattern of the area on the back of the metal substrate that needs to be electroplated.

步骤九、电镀金属线路层 Step 9. Plating metal circuit layer

参见图35,在步骤六中的金属线路层表面镀上多层或是单层金属线路层,所述金属线路层可采用金镍、铜镍金、铜镍钯金、钯金、铜材中的一种或者多种,电镀方式可以是化学电镀也可以是电解电镀的方式。 Referring to Fig. 35, a multi-layer or single-layer metal circuit layer is plated on the surface of the metal circuit layer in step six, and the metal circuit layer can be made of gold nickel, copper nickel gold, copper nickel palladium gold, palladium gold, copper material One or more of them, the electroplating method can be electroless plating or electrolytic plating.

步骤十、绿漆被覆 Step 10. Green paint coating

参见图36,在金属基板的背面进行绿漆的被覆,以保护后续的电镀金属层工艺作业。 Referring to FIG. 36 , green paint is applied on the back of the metal substrate to protect the subsequent electroplating metal layer process.

步骤十一、金属基板背面去除部分绿漆 Step 11. Remove part of the green paint on the back of the metal substrate

参见图37,利用曝光显影设备将步骤十完成绿漆被覆的金属基板背面进行图形曝光、显影与去除部分图形绿漆,以露出金属基板背面后续需要进行电镀的区域图形。 Referring to FIG. 37 , use the exposure and developing equipment to expose, develop and remove part of the graphic green paint on the back of the metal substrate coated with green paint in step ten, so as to expose the pattern of the area on the back of the metal substrate that needs to be electroplated.

步骤十二、覆上线路网板 Step 12. Cover the circuit board

参见图38,在金属基板背面覆上线路网板。 Referring to Fig. 38, the circuit board is covered on the back of the metal substrate.

步骤十三、金属化前处理 Step 13, pre-metallization treatment

参见图39,在基板背面进行电镀金属线路层的金属化前处理,金属化前处理可用涂布方法(喷洒方式、印刷方式、淋涂方式、浸泡的方式等)。 Referring to Figure 39, the metallization pretreatment of the electroplated metal circuit layer is carried out on the back of the substrate, and the metallization pretreatment can be applied by coating methods (spraying, printing, shower coating, immersion, etc.).

步骤十四、移除线路网板 Step 14. Remove the circuit board

参见图40,将步骤十二的线路网板移除。 Referring to Figure 40, remove the circuit board in step 12.

步骤十五、电镀金属线路层 Step 15. Electroplating the metal circuit layer

参见图41,在金属基板背面镀上多层或是单层金属线路层,所述金属线路层可采用金镍、铜镍金、铜镍钯金、钯金、铜材中的一种或者多种,电镀方式可以是化学电镀也可以是电解电镀的方式。 Referring to Figure 41, a multi-layer or single-layer metal circuit layer is plated on the back of the metal substrate. The metal circuit layer can be one or more of gold-nickel, copper-nickel-gold, copper-nickel-palladium-gold, palladium-gold, and copper. One, the electroplating method can be chemical plating or electrolytic plating.

步骤十六、绿漆被覆 Step sixteen, green paint coating

参见图42,在金属基板的背面进行绿漆的被覆,以便将金属线路层包封。 Referring to FIG. 42 , green paint is applied on the back of the metal substrate so as to encapsulate the metal circuit layer.

步骤十七、金属基板正面面去除部分绿漆 Step 17. Remove part of the green paint on the front surface of the metal substrate

参见图43,利用曝光显影设备将金属基板正面进行图形曝光、显影与去除部分图形绿漆,以露出金属基板正面后续需要进行电镀的区域图形。 Referring to FIG. 43 , the front of the metal substrate is subjected to graphic exposure, development and removal of part of the graphic green paint by using the exposure and development equipment, so as to expose the pattern of the area on the front of the metal substrate that needs to be electroplated later.

步骤十八、化学蚀刻 Step 18. Chemical Etching

参见图44,将步骤十七中完成曝光显影的区域进行化学蚀刻,化学蚀刻直至惰性金属线路层为止,蚀刻药水可以采用氯化铜或是氯化铁。 Referring to FIG. 44 , chemically etch the exposed and developed area in step 17 until the inert metal circuit layer is reached. The etching solution can be copper chloride or ferric chloride.

步骤十九、电镀金属线路层 Step 19. Electroplating metal circuit layer

参见图45,在惰性金属线路层表面镀上单层或是多层的金属线路层,金属电镀完成后即在金属基板上形成相应的基岛和引脚,镀层种类可以是铜镍金、铜镍银、钯金、金或铜等,电镀方法可以是化学电镀或是电解电镀。 Referring to Figure 45, a single or multi-layer metal circuit layer is plated on the surface of the inert metal circuit layer. After the metal plating is completed, corresponding base islands and pins are formed on the metal substrate. The type of plating can be copper-nickel-gold, copper Nickel silver, palladium gold, gold or copper, etc., the electroplating method can be electroless plating or electrolytic plating.

步骤二十、装片及芯片底部填充 Step 20, chip loading and chip bottom filling

参见图46,在步骤十九的基岛正面和引脚正面倒装芯片及芯片底部填充胶。 Referring to FIG. 46 , in step nineteen, flip-chip on the front side of the base island and the front side of the pins and fill the bottom of the chip with glue.

步骤二十一、包封 Step 21. Encapsulation

参见图47,将完成装片后的金属基板正面进行塑封料包封工序,目的是利用环氧树脂将芯片以及金属线进行固定与保护,包封方法采用模具灌胶、喷涂方式或刷膠方式进行,塑封料可以采用有填料或是无填料的环氧树脂。 Referring to Figure 47, the front side of the metal substrate after the chip loading is completed is encapsulated with a plastic encapsulation process, the purpose is to use epoxy resin to fix and protect the chip and the metal wire, and the encapsulation method adopts mold pouring, spraying or brushing. The molding compound can be filled or unfilled epoxy resin.

步骤二十二、金属基板背面开孔 Step 22. Open holes on the back of the metal substrate

参见图48,在金属基板背面进行后续要植金属球的区域进行开孔作业,可以采用干式激光烧结或是湿式化学腐蚀的方法进行开孔。 Referring to Fig. 48, holes are drilled on the back of the metal substrate in the area where metal balls are to be planted later, and holes can be drilled by dry laser sintering or wet chemical etching.

步骤二十三、清洗 Step twenty-three, cleaning

参见图49,在金属基板背面绿漆开孔处进行氧化物质、有机物质的清洗,同时可进行金属保护层的被覆,金属保护层采用抗氧化材料。 Referring to Figure 49, cleaning of oxidized substances and organic substances is carried out at the openings of the green paint on the back of the metal substrate, and at the same time, the coating of the metal protective layer can be carried out, and the metal protective layer is made of anti-oxidation material.

步骤二十四、植球 Step twenty-four, planting the ball

参见图50,在金属基板背面开孔处内植入金属球,使金属球与引脚背面相接触,可以采用常规的植球机或是采用金属膏印刷再经高温溶解之后即可形成球状体,金属球的材料可以是纯锡或锡合金。 Referring to Figure 50, metal balls are implanted in the openings on the back of the metal substrate so that the metal balls are in contact with the back of the pins. A conventional ball planting machine or a metal paste can be used to print and dissolve at high temperature to form a spherical body. , the material of the metal ball can be pure tin or tin alloy.

步骤二十五、切割成品 Step 25. Cut the finished product

参见图51,将步骤二十四完成植球的半成品进行切割作业,使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来,制得单芯片倒装先蚀刻后封装基岛埋入封装结构,可采用常规的钻石刀片以及常规的切割设备即可。 Referring to Figure 51, the semi-finished products that have been ball-planted in step 24 are cut, so that the plastic package modules that are originally integrated in the form of an array assembly and contain chips are cut and separated one by one to obtain a single-chip flip-chip The base island is embedded in the packaging structure after etching first, and conventional diamond blades and conventional cutting equipment can be used.

如图52所示,本发明还提供一种芯片倒装单面三维线路先蚀后封的封装结构,所述封装结构包括基岛14和引脚15,所述芯片9的正面倒装于基岛14正面和引脚15正面,所述芯片9底部与基岛14正面和引脚15正面之间设置有底部填充胶8,所述基岛14外围的区域、基岛14和引脚15之间的区域、引脚15与引脚15之间的区域、基岛14和引脚15上部的区域、基岛14和引脚15下部的区域以及芯片9外包封有绿漆3和塑封料10,所述引脚15背面的绿漆3上开设有小孔11,所述小孔11与引脚15背面相连通,所述小孔11内设置有金属球13,所述金属球13与引脚15背面之间设置有金属保护层12,所述金属球13采用锡或锡合金材料。 As shown in Fig. 52, the present invention also provides a package structure in which flip-chip single-sided three-dimensional circuits are etched first and then sealed. The package structure includes base islands 14 and pins 15. The front side of the island 14 and the front side of the pin 15, the bottom of the chip 9 and the front side of the base island 14 and the front side of the pin 15 are provided with underfill glue 8, the area around the base island 14, the area between the base island 14 and the pin 15 The area between the pins 15 and 15, the area above the base island 14 and the pin 15, the area below the base island 14 and the pin 15, and the chip 9 is encapsulated with green paint 3 and plastic encapsulant 10 , the green paint 3 on the back side of the pin 15 is provided with a small hole 11, the small hole 11 communicates with the back side of the pin 15, and a metal ball 13 is arranged in the small hole 11, and the metal ball 13 is connected to the lead wire. A metal protection layer 12 is provided between the backs of the feet 15, and the metal ball 13 is made of tin or tin alloy material.

Claims (4)

1. the three-dimensional circuit of flip-chip single face loses earlier and afterwards seals manufacturing approach, said method comprising the steps of:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper
At metallic substrate surfaces plating one deck copper material film;
Step 3, the lining of green lacquer
The lining of green lacquer is carried out at the metal substrate front and the back side accomplishing preplating copper material film respectively;
The green lacquer of part is removed at step 4, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 3 is accomplished green lacquer lining is carried out graph exposure, develops and is removed the green lacquer of part figure;
Step 5, plating inert metal line layer
In step 4, electroplate the inert metal line layer in the zone of the green lacquer of metal substrate back side removal part;
Step 6, plated metal line layer
Inert metal line layer surface in step 5 plates multilayer or single-layer metal line layer;
Step 7, the lining of green lacquer
Carry out the lining of green lacquer at the back side of metal substrate;
The green lacquer of part is removed at step 8, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 4 is accomplished green lacquer lining is carried out graph exposure, develops and is removed the green lacquer of part figure;
Step 9, plated metal line layer
Metallic circuit laminar surface in step 6 plates multilayer or single-layer metal line layer;
Step 10, the lining of green lacquer
Carry out the lining of green lacquer at the back side of metal substrate;
The green lacquer of part is removed at step 11, the metal substrate back side
The metal substrate back side that utilizes exposure imaging equipment that step 10 is accomplished green lacquer lining is carried out graph exposure, develops and is removed the green lacquer of part figure;
Step 12, be covered with the circuit web plate
Be covered with the circuit web plate at the metal substrate back side;
Step 13, metallization pre-treatment
Carry out the metallization pre-treatment of plated metal line layer at substrate back;
Step 14, remove the circuit web plate
The circuit web plate of step 12 is removed;
Step 15, plated metal line layer
Plate multilayer or single-layer metal line layer at the metal substrate back side;
Step 10 six, the lining of green lacquer
Carry out the lining of green lacquer at the back side of metal substrate;
Step 10 seven, metal substrate front face are removed the green lacquer of part
Utilize exposure imaging equipment that the metal substrate front is carried out graph exposure, develops and removed the green lacquer of part figure;
Step 10 eight, chemical etching
Chemical etching is carried out in the zone of accomplishing exposure imaging in the step 10 seven;
Step 10 nine, plated metal line layer
Plate the metallic circuit layer of individual layer or multilayer on inert metal line layer surface, promptly on metal substrate, form corresponding pin or Ji Dao and pin after metal plating is accomplished;
Step 2 ten, load and chip bottom are filled
Positive and pin front flip-chip and chip bottom filling epoxy resin on the positive or basic island of the pin of step 10 nine;
Step 2 11, seal
Plastic packaging material is carried out in metal substrate front behind the completion load routing seal operation;
Step 2 12, the perforate of the metal substrate back side
At the metal substrate back side perforate operation is carried out in the follow-up zone that will plant metal ball;
Step 2 13, cleaning
Tapping carries out the cleaning of oxidation material, organic substance at the metal substrate back side;
Step 2 14, plant ball
Green lacquer tapping is implanted into metal ball at the metal substrate back side;
Step 2 15, cutting finished product
Step 2 14 is accomplished the semi-finished product of planting ball carry out cutting operation; Make and originally integrate and to contain more than cuttings of plastic-sealed body module of chip independent with array aggregate mode; Encapsulate base island embedded encapsulating structure after making the etching of single-chip upside-down mounting elder generation, can adopt conventional diamond blade and conventional cutting equipment to get final product.
2. the three-dimensional circuit of flip-chip single face as claimed in claim 1 loses earlier and afterwards seals encapsulating structure; It is characterized in that it comprises pin (16); The positive upside-down mounting of said chip (9) is in pin (5) front; Be provided with underfill (8) between said chip (9) bottom and pin (15) front; The zone of the zone on the zone between said pin (15) and the pin (15), pin (15) top, pin (15) bottom and chip (9) are outer to be encapsulated with green lacquer (3) and plastic packaging material (10), offers aperture (11) on the green lacquer (3) at said pin (15) back side, and said aperture (11) is connected with pin (15) back side; Be provided with metal ball (13) in the said aperture (11), said metal ball (13) contacts with pin (15) back side.
3. the three-dimensional circuit of a kind of flip-chip single face according to claim 1 loses the manufacture method of afterwards sealing earlier, it is characterized in that: the 13 pairs of metal substrate back side of said step 2 tapping cleans and carries out the coat of metal lining simultaneously.
4. the three-dimensional circuit of a kind of flip-chip single face according to claim 2 loses earlier the encapsulating structure that afterwards seals; It is characterized in that: said encapsulating structure comprises Ji Dao (14); The positive upside-down mounting of said chip (9) is positive and pin (15) front in Ji Dao (14), is provided with underfill (8) between said chip (9) bottom and Ji Dao (14) front and pin (15) front.
CN201210189894.4A 2012-06-09 2012-06-09 Etching-first and packaging-later manufacturing method for chip inversion single-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit Active CN102723293B (en)

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CN103646929A (en) * 2013-12-05 2014-03-19 江苏长电科技股份有限公司 Primary plating-prior-to-etching metal frame subtraction imbedded chip normal-installation flat pin structure and process method
CN103646939A (en) * 2013-12-05 2014-03-19 江苏长电科技股份有限公司 Secondary plating-prior-to-etching metal frame subtraction imbedded chip normal-installation bump structure and process method
CN115274461A (en) * 2022-05-31 2022-11-01 浙江禾芯集成电路有限公司 Packaging method of packaging structure applied to planar power device

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