CN102684462B - Novel low end metal oxide semiconductor field effect transistor (MOSFET)/ insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and control method thereof - Google Patents
Novel low end metal oxide semiconductor field effect transistor (MOSFET)/ insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and control method thereof Download PDFInfo
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Abstract
本发明公开了一种低端MOSFET负压箝位驱动电路及其控制方法，属于电力电子驱动领域。它包括电路连接的负压箝位驱动单元与BOOST升压单元；控制方法的步骤为：(1)控制S1与S4处于导通状态，S2与S3处于关断状态；(2)控制S1、S2、S3和S4处于关断状态，Q栅源极上的电压始终维持在U3上不变；(3)控制S2与S3处于导通状态，S1与S4处于关断状态，Q上的栅源电压将会被箝位在电压U4上，Q瞬间被关断；(4)控制S1、S2、S3和S4都处于不导通状态，Q栅源极上的电压维持在U4上。其中S1、S2、S3、S4和Q均代表不同的MOSFET开关管。本发明提高了驱动电路的抗干扰能力，可有效防止开关器件的误导通。
The invention discloses a low-end MOSFET negative pressure clamp driving circuit and a control method thereof, which belong to the field of power electronic driving. It includes a negative pressure clamping drive unit and a BOOST step-up unit connected by a circuit; the steps of the control method are: (1) controlling S1 and S4 to be in an on state, and S2 and S3 to be in an off state; (2) Control S 1 , S 2 , S 3 and S 4 to be in the off state, and the voltage on the Q gate source is always maintained at U 3 ; (3) Control S 2 and S 3 to be in the on state, and S 1 and S 4 is in the off state, the gate-source voltage on Q will be clamped to the voltage U 4 , and Q will be turned off instantly; (4) Control S 1 , S 2 , S 3 and S 4 to be non-conductive state, the voltage on the Q gate source is maintained on U4 . Wherein S 1 , S 2 , S 3 , S 4 and Q all represent different MOSFET switch tubes. The invention improves the anti-interference ability of the drive circuit and can effectively prevent the false conduction of the switching device.
Description
Technical field
The invention belongs to power electronics and drive field, more particularly, relate to a kind of drive circuit and circuit control method thereof of negative pressure driving switch pipe.
Background technology
In recent years, along with the development of technology, the switching frequency that voltage source drives has exceeded 1MHz gradually, but switching frequency is too high, can bring a series of problem, the major obstacle that wherein hinders the raising of voltage source driving switch frequency is exactly that switching device turns on and off loss, the loss of gate-drive and the loss of switching device output capacitance in process, and driven with current sources just in time can address the above problem, it can improve the switching frequency of switching tube greatly, reduce switching loss, be therefore widely used.
Driven with current sources is carried out charging and discharging by a constant current signal to switching tube and is reached the effect that reduces switching loss, it should be noted that especially, the benefit of driven with current sources maximum is exactly with minus negative pressure on-off switching tube in the process that can turn-off at switching tube, than traditional drive circuit, driven with current sources circuit can be in switching tube turn off process be turn-offed with turn-off speed faster.But, along with the raising of circuit integration degree, as the critical elements inductance in driven with current sources circuit, because its volume is large, be difficult to integrated, so inductance becomes a difficult point (Jizhen Fu.Topologies and modelings of novel bipolar gate driver techniques for next-generation high frequency voltage regulators[D] .Queen ' s University Master ' s thesis, 2010:73-76.) of driven with current sources circuit integration.
Summary of the invention
1. the problem to be solved in the present invention
Cause the problems such as switching loss increasing to propose a kind of low side MOSFET negative pressure hooping position driving circuit and control method thereof for the continuous rising due to switching frequency in prior art, circuit of the present invention and method have been accelerated the switching speed of switching tube, improve the antijamming capability of drive circuit, can effectively prevent misleading of switching device.
2. technical scheme
Technology bill of the present invention is achieved in that
Low side MOSFET negative pressure hooping position driving circuit, it comprises negative pressure clamp driver element, described negative pressure clamp driver element is connected with BOOST boosting unit circuit.
Described negative pressure clamp driver element is by power supply V
cc, bootstrap capacitor C
1, bootstrap capacitor C
2, diode D
1, diode D
2, switch mosfet pipe S
1, switch mosfet pipe S
2, switch mosfet pipe S
3with switch mosfet pipe S
4composition, described power supply V
ccminus earth, power supply V
ccpositive pole and diode D
1positive pole be connected, diode D
1negative pole and switch mosfet pipe S
1drain electrode connect, described bootstrap capacitor C
1one end access diode D
1negative pole and switch mosfet pipe S
1drain electrode between, bootstrap capacitor C
1the other end and bootstrap capacitor C
2connect bootstrap capacitor C
2the other end with and diode D
2anodal connection, diode D
2minus earth, described switch mosfet pipe S
4drain electrode and power supply V
ccpositive pole be connected, switch mosfet pipe S
3drain electrode be connected on capacitor C
1with C
2between, switch mosfet pipe S
3source electrode with ground be connected, switch mosfet pipe S
4source electrode be connected on switch mosfet pipe S
3drain electrode on, switch mosfet pipe S
1source electrode be connected with the grid of switch mosfet pipe Q in BOOST boosting unit, switch mosfet pipe S
2drain electrode and switch mosfet pipe S
1source electrode connect, switch mosfet pipe S
2source electrode be connected on capacitor C
2with diode D
2between.
Described negative pressure clamp units is by controlling four switch mosfet pipe S
1, S
2, S
3, S
4open shutoff sequential, form different loops, BOOST circuit MOSFET Q is discharged and recharged, and bootstrap capacitor C
1, C
2the clamping action conducting of controlling Q with this turn-off, and be clamped on supply voltage or negative pressure.
Further, described BOOST boosting unit is by input power V
in, input capacitance C
in, inductance L
main, switch mosfet pipe Q, diode D
s, output capacitance C
outwith load resistance R composition, input power V
inwith input capacitance C
inparallel connection, inductance L
main, diode D
swith output capacitance C
outrear and input capacitance C successively connect
inparallel connection, inductance L
mainone end be connected with the positive pole of input capacitance, inductance L
mainthe other end and diode D
spositive pole connect, diode D
snegative pole and output capacitance C
outpositive pole connect, output capacitance C
outminus earth, the drain electrode of switch mosfet pipe Q is connected on inductance L
mainwith diode D
sbetween, the source ground of switch mosfet pipe Q, described load resistance R is connected in parallel on output capacitance C
outtwo ends.
Described BOOST boosting unit is by input power V
inpower supply, through input capacitance C
inafter voltage regulation filtering, come main circuit inductance L by controlling switch mosfet pipe Q break-make
main, output capacitance C
outdischarge and recharge, reach the object of boosting.
The control method of low side MOSFET negative pressure hooping position driving circuit, the steps include:
Mainly simultaneously to the switch mosfet pipe S in negative pressure clamp driver element
1, S
2, S
3, S
4drive signal, wherein switch mosfet pipe S
1with S
4driving signal identical, switch mosfet pipe S
2with S
3driving signal identical, switch mosfet pipe S
1with S
2driving signal contrary, and leave certain Dead Time between two kinds of signals, specifically comprise the following steps:
(1) first control the switch mosfet pipe S of negative pressure clamp driver element
1with switch mosfet pipe S
4in conducting state, switch mosfet pipe S
2with switch mosfet pipe S
3in off state, now power supply V
ccby switch mosfet pipe S
4give bootstrap capacitor C
2charging, makes bootstrap capacitor C
2on magnitude of voltage by zero volt start charging, finally reach U
1, this magnitude of voltage is to ignore switch mosfet pipe S
4conduction voltage drop after obtain, U wherein
d2for diode D
2on conduction voltage drop; U
1computing formula as follows:
U
1＝V
cc-U
D2 (1)
Power supply V
ccby diode D
1with switch mosfet pipe S
1give switch mosfet pipe Q charging in BOOST boosting unit, make its conducting, charging voltage value starts as U
2, this magnitude of voltage is to ignore switch mosfet pipe S
1conduction voltage drop after obtain, U wherein
d1for diode D
1on conduction voltage drop; U
2computing formula as follows:
U
2＝V
cc-U
D1 (2)
Input power V
instart inductance L
maincharging, along with bootstrap capacitor C
2on the increase of magnitude of voltage, the charging voltage on switch mosfet pipe Q also increases thereupon, finally reaches U
3, and it is upper to be stabilized in this value, the equivalent circuit diagram of this process is as shown in Figure 3 and Figure 4; U
3computing formula as follows:
U
3＝2V
cc-U
D1-U
D2 (3)
(2) control switch mosfet pipe S
1, switch mosfet pipe S
2, switch mosfet pipe S
3with switch mosfet pipe S
4all in off state, due to diode D
1reverse cut-off effect, the voltage on switch mosfet pipe Q grid source electrode maintains U all the time
3upper constant, the equivalent circuit diagram of this process as shown in Figure 5;
(3) control switch mosfet pipe S
2with S
3in conducting state, and switch mosfet pipe S
1with S
4in off state, bootstrap capacitor C
2on polarity of voltage just in time contrary with the gate source voltage polarity on switch mosfet pipe Q, form back clamping, because the voltage on electric capacity can not suddenly change, therefore the gate source voltage on switch mosfet pipe Q will be clamped at voltage U
4upper, switch mosfet pipe Q moment is turned off, the equivalent circuit diagram of this process as shown in Figure 6 and Figure 7, input power V
inand inductance L
mainsimultaneously to output capacitance C
outcharging, completes boost function; U
4computing formula as follows:
U
4＝-V
cc+U
D2 (4)
(4) control switch mosfet pipe S
1, switch mosfet pipe S
2, switch mosfet pipe S
3with switch mosfet pipe S
4in not on-state, the electric charge on switch mosfet pipe Q grid source electrode does not have discharge loop, therefore the voltage on switch mosfet pipe Q grid source electrode maintains U
4upper, the equivalent circuit diagram of this process as shown in Figure 8.
3. beneficial effect
Than prior art, the invention has the advantages that:
(1) circuit of the present invention passes through bootstrap capacitor C
2charging, utilize voltage on the bootstrap capacitor principle of can not suddenling change that switch mosfet pipe Q is oppositely turn-offed, than conventional ADS driving circuit, this circuit is only using under a positive supply condition, the pwm signal that can realize shutoff MOSFET is negative voltage, turn-off time is extremely short, prevented when MOSFET from turn-offing due to misleading that driving voltage fluctuation causes, and greatly reduced turn-off power loss;
(2) compared with conventional current source driving circuit, in drive circuit of the present invention, there is no the relatively huge components and parts of this class volume of inductance, greatly reduce the volume of circuit, integrated degree is high.
Brief description of the drawings
Fig. 1: low side MOSFET negative pressure hooping position driving circuit schematic diagram;
Fig. 2: low side MOSFET negative pressure hooping position driving circuit relevant parameter oscillogram;
Fig. 3: operation mode 1 equivalent circuit diagram of low side MOSFET negative pressure hooping position driving circuit;
Fig. 4: operation mode 2 equivalent circuit diagrams of low side MOSFET negative pressure hooping position driving circuit;
Fig. 5: operation mode 3 equivalent circuit diagrams of low side MOSFET negative pressure hooping position driving circuit;
Fig. 6: operation mode 4 equivalent circuit diagrams of low side MOSFET negative pressure hooping position driving circuit;
Fig. 7: operation mode 5 equivalent circuit diagrams of low side MOSFET negative pressure hooping position driving circuit;
Fig. 8: operation mode 6 equivalent circuit diagrams of low side MOSFET negative pressure hooping position driving circuit;
Fig. 9: switch mosfet pipe Q gate source voltage waveform when switching frequency is 500KHz;
Figure 10: switch mosfet pipe Q gate source voltage conducting waveform when switching frequency is 500KHz;
Figure 11: when switching frequency is 500KHz, switch mosfet pipe Q gate source voltage turn-offs waveform;
In figure: 1-BOOST boosting unit; 2-negative pressure drives clamp units.
Embodiment
Further describe technical scheme of the present invention below in conjunction with accompanying drawing and specific embodiment.
Embodiment 1
As Fig. 1, the low side MOSFET negative pressure hooping position driving circuit of the present embodiment, it comprises that BOOST boosting unit 1 and negative pressure drive clamp units 2.Fig. 2 is low side MOSFET negative pressure hooping position driving circuit relevant parameter oscillogram, as we can see from the figure, and in one-period, from t
0-t
6during this period of time, the operation mode of switching tube Q can be divided into 6, and concrete each operation mode is as shown in Fig. 3～Fig. 8.
BOOST boosting unit 1 is by 14V input power V
in, 50uf input capacitance C
in, 50uH inductance L
main, model be FQDN10TM switch mosfet pipe Q, diode D
s, 10uF output capacitance C
outwith 20 Ω load resistance R compositions, input power V
inwith input capacitance C
inparallel connection, inductance L
main, diode D
swith output capacitance C
outrear and input capacitance C successively connect
inparallel connection, inductance L
mainone end be connected with the positive pole of input capacitance, inductance L
mainthe other end and diode D
spositive pole connect, diode D
snegative pole and output capacitance C
outpositive pole connect, output capacitance C
outminus earth, the drain electrode of switch mosfet pipe Q is connected on inductance L
mainwith diode D
sbetween, the source ground of switch mosfet pipe Q, load resistance R is connected in parallel on output capacitance C
outtwo ends.
Negative pressure drives clamp units 2 by 5.3V input power V
cc, the switch mosfet pipe S that model is FDN335N
1, S
2, S
3, S
4, the bootstrap capacitor C of 5uF
1with bootstrap capacitor C
2, diode D
1with diode D
2composition, power supply V
ccminus earth, power supply V
ccpositive pole and diode D
1positive pole be connected, diode D
1negative pole and switch mosfet pipe S
1drain electrode connect, bootstrap capacitor C
1one end access diode D
1negative pole and switch mosfet pipe S
1drain electrode between, bootstrap capacitor C
1the other end and bootstrap capacitor C
2connect bootstrap capacitor C
2the other end with and diode D
2anodal connection, diode D
2minus earth, switch mosfet pipe S
4drain electrode and power supply V
ccpositive pole be connected, switch mosfet pipe S
3drain electrode be connected on capacitor C
1with C
2between, switch mosfet pipe S
3source electrode with ground be connected, switch mosfet pipe S
4source electrode be connected on switch mosfet pipe S
3drain electrode on, switch mosfet pipe S
1drain electrode and diode D
1negative pole be connected, switch mosfet pipe S
1source electrode be connected with the grid of switch mosfet pipe Q in BOOST boosting unit 1, switch mosfet pipe S
2drain electrode and switch mosfet pipe S
1source electrode connect, switch mosfet pipe S
2source electrode be connected on capacitor C
2with diode D
2between.
The control method of the low side MOSFET negative pressure hooping position driving circuit of the present embodiment, the steps include:
(1) first control the switch mosfet pipe S of negative pressure clamp driver element 2
1with switch mosfet pipe S
4in conducting state, switch mosfet pipe S
2with switch mosfet pipe S
3in off state, now power supply V
ccfor 5.3V is by switch mosfet pipe S
4give the bootstrap capacitor C of 5uF
2charging, makes bootstrap capacitor C
2on magnitude of voltage by zero volt start charging, finally reach 4.6V, this magnitude of voltage is to ignore switch mosfet pipe S
4conduction voltage drop after obtain, diode D wherein
2on conduction voltage drop be 0.7V; The power supply V of 5.3V
ccby diode D
1with switch mosfet pipe S
1give switch mosfet pipe Q charging in BOOST boosting unit 1, make its conducting, charging voltage value starts as 4.6V, and this magnitude of voltage is to ignore switch mosfet pipe S
1conduction voltage drop after obtain, diode D wherein
1on conduction voltage drop be 0.7V, the input power V of 14V
instart the inductance L to 50uH
maincharging, along with bootstrap capacitor C
2on the increase of magnitude of voltage, the charging voltage on switch mosfet pipe Q also increases thereupon, finally reaches 9.2V, and is stabilized in this value.As Fig. 3.
(2) control switch mosfet pipe S
1, switch mosfet pipe S
2, switch mosfet pipe S
3with switch mosfet pipe S
4all in off state, due to diode D
1reverse cut-off effect, it is upper constant that the voltage on switch mosfet pipe Q grid source electrode maintains 9.2V all the time.
(3) control switch mosfet pipe S
2with S
3in conducting state, and switch mosfet pipe S
1with S
4in off state, bootstrap capacitor C
2on polarity of voltage just in time contrary with the gate source voltage polarity on switch mosfet pipe Q, form back clamping, because the voltage on electric capacity can not suddenly change, therefore on will the be clamped at-4.6V of gate source voltage on switch mosfet pipe Q, switch mosfet pipe Q moment is turned off, the equivalent circuit diagram of this process as shown in Figure 6 and Figure 7, the input power V of 14V
ininductance L with 50uH
mainsimultaneously to 10uF output capacitance C
outcharging, completes boost function.
(4) control switch mosfet pipe S
1, switch mosfet pipe S
2, switch mosfet pipe S
3with switch mosfet pipe S
4in not on-state, the electric charge on switch mosfet pipe Q grid source electrode does not have discharge loop, therefore the maintain-4.6V of voltage on switch mosfet pipe Q grid source electrode is upper, the equivalent circuit diagram of this process as shown in Figure 8.
Making circuit work frequency is f=500KHz, switch mosfet pipe S
1and S
2, S
3and S
4dead Time is each other 20ns.Fig. 9 is the gate-source voltage V of switch mosfet pipe Q in BOOST boosting unit 1
cGSsimulation waveform, as seen from the figure, in a switch periods 2us, when after switch mosfet pipe Q conducting, its gate-source voltage V
cGSbe stabilized in 9.8V left and right, when Q turn-offs, its gate-source voltage V
cGSabout be clamped on-4.6V, has realized with negative pressure and has turn-offed switch mosfet pipe, and opens with cut-off signals and be all less than rated voltage ± 20V that the gate source voltage of switch mosfet pipe Q bears.Figure 10 is switch mosfet pipe Q conducting phase gate source voltage V in BOOST boosting unit 1
cGSoscillogram, as shown in Figure 10, the gate source voltage V of switch mosfet pipe Q
cGSrise to 9.8V by-4.6V through time of about 10ns, ON time is than faster, and known according to the on state characteristic of MOSFET, driving voltage is higher, and the switching tube opening time is shorter, and switching tube conducting resistance is less, and switching tube performance is better.Figure 11 is switch mosfet pipe Q off-phases gate source voltage V in BOOST boosting unit 1
cGSoscillogram, as shown in Figure 11, gate source voltage V when switch mosfet pipe Q conducting
cGSdropping to the 0V time used by 9.8V is 2.4ns, and gate source voltage V thereafter
cGScontinue to decline and be finally clamped at-4.6V, effectively prevented due to misleading that extraneous disturbing factor causes.In sum, than traditional drive circuit, conducting and turn-off time that the drive circuit that the present invention proposes and control method thereof can greatly reduce switching tube, effectively reduced switching loss.
Claims (3)
1. low side MOSFET negative pressure hooping position driving circuit, it comprises negative pressure clamp driver element (2), described negative pressure clamp driver element (2) is connected with BOOST boosting unit (1) circuit, it is characterized in that:
Described negative pressure clamp driver element (2) is by power supply V
cc, bootstrap capacitor C
1, bootstrap capacitor C
2, diode D
1, diode D
2, switch mosfet pipe S
1, switch mosfet pipe S
2, switch mosfet pipe S
3with switch mosfet pipe S
4composition, described power supply V
ccminus earth, power supply V
ccpositive pole and diode D
1positive pole be connected, diode D
1negative pole and switch mosfet pipe S
1drain electrode connect, described bootstrap capacitor C
1one end access diode D
1negative pole and switch mosfet pipe S
1drain electrode between, bootstrap capacitor C
1the other end and bootstrap capacitor C
2connect bootstrap capacitor C
2the other end with and diode D
2anodal connection, diode D
2minus earth, described switch mosfet pipe S
4drain electrode and power supply V
ccpositive pole be connected, switch mosfet pipe S
3drain electrode be connected on capacitor C
1with C
2between, switch mosfet pipe S
3source electrode with ground be connected, switch mosfet pipe S
4source electrode be connected on switch mosfet pipe S
3drain electrode on, switch mosfet pipe S
1source electrode and BOOST boosting unit (1) in the grid of switch mosfet pipe Q be connected, switch mosfet pipe S
2drain electrode and switch mosfet pipe S
1source electrode connect, switch mosfet pipe S
2source electrode be connected on capacitor C
2with diode D
2between.
2. low side MOSFET negative pressure hooping position driving circuit according to claim 1, is characterized in that, described BOOST boosting unit (1) is by input power V
in, input capacitance C
in, inductance L
main, switch mosfet pipe Q, diode D
s, output capacitance C
outwith load resistance R composition, input power V
inwith input capacitance C
inparallel connection, inductance L
main, diode D
swith output capacitance C
outrear and input capacitance C successively connect
inparallel connection, inductance L
mainone end and input capacitance C
inpositive pole connect, inductance L
mainthe other end and diode D
spositive pole connect, diode D
snegative pole and output capacitance C
outpositive pole connect, output capacitance C
outminus earth, the drain electrode of switch mosfet pipe Q is connected on inductance L
mainwith diode D
sbetween, the source ground of switch mosfet pipe Q, described load resistance R is connected in parallel on output capacitance C
outtwo ends.
3. a control method for low side MOSFET negative pressure hooping position driving circuit according to claim 2 is given the switch mosfet pipe S in described negative pressure clamp driver element (2) simultaneously
1, switch mosfet pipe S
2, switch mosfet pipe S
3with switch mosfet pipe S
4drive signal, wherein switch mosfet pipe S
1with switch mosfet pipe S
4driving signal identical, switch mosfet pipe S
2with switch mosfet pipe S
3driving signal identical, switch mosfet pipe S
1with switch mosfet pipe S
2driving signal contrary, and leave certain Dead Time between two kinds of signals, specifically comprise the following steps:
(1) first control the switch mosfet pipe S of negative pressure clamp driver element (2)
1with switch mosfet pipe S
4in conducting state, switch mosfet pipe S
2with switch mosfet pipe S
3in off state, now power supply V
ccby switch mosfet pipe S
4give bootstrap capacitor C
2charging, makes bootstrap capacitor C
2on magnitude of voltage by zero volt start charging, finally reach U
1, wherein U
d2for diode D
2on conduction voltage drop; U
1computing formula as follows:
U
1=V
cc-U
d2formula (1)
Power supply V
ccby diode D
1with switch mosfet pipe S
1give switch mosfet pipe Q charging in BOOST boosting unit (1), make its conducting, the charging voltage value providing starts as U
2, wherein U
d1for diode D
1on conduction voltage drop; U
2computing formula as follows:
U
2=V
cc-U
d1formula (2)
Input power V
instart inductance L
maincharging, along with bootstrap capacitor C
2on the increase of magnitude of voltage, the charging voltage on switch mosfet pipe Q also increases thereupon, finally reaches U
3, and it is upper to be stabilized in this value, U
3computing formula as follows:
U
3=2V
cc-U
d1-U
d2formula (3)
(2) control switch mosfet pipe S
1, switch mosfet pipe S
2, switch mosfet pipe S
3with switch mosfet pipe S
4all in off state, due to diode D
1reverse cut-off effect, the voltage on switch mosfet pipe Q grid source electrode maintains U all the time
3upper constant;
(3) control switch mosfet pipe S
2with S
3in conducting state, and switch mosfet pipe S
1with S
4in off state, bootstrap capacitor C
2on polarity of voltage just in time contrary with the gate source voltage polarity on switch mosfet pipe Q, form back clamping, because the voltage on electric capacity can not suddenly change, therefore the gate source voltage on switch mosfet pipe Q will be clamped at voltage U
4upper, switch mosfet pipe Q moment is turned off, input power V
inand inductance L
mainsimultaneously to output capacitance C
outcharging, completes boost function; U
4computing formula as follows:
U
4=-V
cc+ U
d2formula (4)
(4) control switch mosfet pipe S
1, switch mosfet pipe S
2, switch mosfet pipe S
3with switch mosfet pipe S
4in the state of not conducting, the electric charge on switch mosfet pipe Q grid source electrode does not have discharge loop, therefore the voltage on switch mosfet pipe Q grid source electrode maintains U
4on.
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| CN201210176271.3A CN102684462B (en) | 2012-05-31 | 2012-05-31 | Novel low end metal oxide semiconductor field effect transistor (MOSFET)/ insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and control method thereof |
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|---|---|---|---|
| CN201210176271.3A CN102684462B (en) | 2012-05-31 | 2012-05-31 | Novel low end metal oxide semiconductor field effect transistor (MOSFET)/ insulated gate bipolar transistor (IGBT) negative pressure clamping driving circuit and control method thereof |
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| JP6398872B2 (en) * | 2015-05-27 | 2018-10-03 | 株式会社デンソー | Drive device |
| CN104917359B (en) * | 2015-06-01 | 2017-11-07 | 矽力杰半导体技术(杭州)有限公司 | A kind of upper switch tube driving circuit and apply its synchronous boost circuits |
| CN105634275A (en) * | 2016-03-23 | 2016-06-01 | 西安工业大学 | Boost converter of switch inductor |
| CN108539964B (en) * | 2018-08-08 | 2018-11-20 | 上海颛芯企业管理咨询合伙企业（有限合伙） | The driving circuit and its device of power switch tube |
| US11831307B2 (en) | 2018-08-08 | 2023-11-28 | Inventchip Technology Co., Ltd. | Power switch drive circuit and device |
| CN110061621B (en) * | 2019-04-16 | 2025-01-07 | 杰华特微电子股份有限公司 | A switching power supply control circuit and method and a switching power supply |
| CN111130514B (en) * | 2019-12-30 | 2022-04-29 | 华为数字能源技术有限公司 | Control method and control device for switching device |
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| US20090295362A1 (en) * | 2008-05-27 | 2009-12-03 | Analog Devices, Inc. | Voltage boost circuit without device overstress |
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| CN102684462A (en) | 2012-09-19 |
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