CN102683550B - Light emitting semiconductor device and manufacture method thereof - Google Patents
Light emitting semiconductor device and manufacture method thereof Download PDFInfo
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- CN102683550B CN102683550B CN201210055291.5A CN201210055291A CN102683550B CN 102683550 B CN102683550 B CN 102683550B CN 201210055291 A CN201210055291 A CN 201210055291A CN 102683550 B CN102683550 B CN 102683550B
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- substrate
- luminous element
- silicon substrate
- sheet metal
- electrically conducting
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 title abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 28
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000008188 pellet Substances 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The invention discloses a kind of luminescent device (LED) and manufacture method thereof, described device is sandwich style sandwich, and the middle part of described sandwich is luminous element; In the both sides of described luminous element, comprise the electrically conducting transparent heat-conducting layer being positioned at described emitter surface respectively successively, and be positioned at described electrically conducting transparent heat-conducting layer surface, the metal level with optical transmission window.Light emitting semiconductor device of the present invention and manufacture method thereof, can make the vertical placement of LED component and double-side, improves luminous efficiency, and do not affect the heat dispersion of device.
Description
Technical field
The present invention relates to semiconductor lighting devices technical field, be specifically related to a kind of light emitting semiconductor device and manufacture method thereof.
Background technology
Light emitting semiconductor device, such as light-emitting diode, be called for short LED, be by three four compounds, as the semiconductors such as GaAs (GaAs), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) are made, its core is PN junction.The diode be made up with the compound of arsenic (AS), phosphorus (P) of gallium (Ga), its operation principle is the electroluminescent principle of PN junction.After diode electrode two ends add certain forward voltage, a large amount of electron injection will be had in diode, there is compound in the high-energy electron on PN junction conduction band and the hole in valence band, and is emitted in the form of light by unnecessary energy, and the material that the color of light is used with diode is relevant.Light-emitting diode (LED) is low in energy consumption with it as light source, the life-span long, reliability high, many fields in daily life obtain general accreditation, be used widely in electronic product, such as, as indicator light in circuit and instrument, display backlight etc.
The short-wave long light-emitting diodes such as the light-emitting diode of sowing (InGaN) to sow (GaN) and indium nitrogenize based on semiconductor material with wide forbidden band nitrogenize is the near ultraviolet ray of representative, blue-green and blueness were used widely for the later stage in nineteen ninety, and basic research and business application achieve very much progress.At present, the typical structure of the GaN base light-emitting diode generally applied as shown in Figure 1, the structure of GaN base light-emitting diode comprises Sapphire Substrate 10, the n-type GaN layer 201 of MOCVD process deposits is utilized on substrate 10 surface, the luminescence unit that the AlGaN layer 207 that the AlGaN layer 203 of being adulterated by N-shaped, InGaN luminescent layer 205 (comprising single quantum hydrazine or Multiple-quantum hydrazine) and p-type are adulterated forms, and p-type GaN layer 209.Comprise transparent conductive oxide (TCO) contact layer 211 utilizing LPCVD technique or magnetron sputtering technique deposition in addition, and pass through p-electrode 213 and the n-electrode 215 of the technique formation such as deposition, mask, photoetching and etching.
The GaN base light-emitting diode of said structure, also comprises the light-emitting diode of other type certainly, and its chip structure all adopts planar structure, and light emitting species is unidirection luminous, and the taking-up of light is subject to the restriction of material and manufacture process.Along with LED is to semiconductor lighting future development, the encapsulation of LED, except must meeting larger dissipation power, good radiating effect, also needs to have higher luminous efficiency.
Summary of the invention
The invention provides a kind of light emitting semiconductor device and manufacture method thereof, the vertical placement of LED component can be made and double-side, improve luminous efficiency, and do not affect the heat dispersion of device.
On the one hand, luminescent device of the present invention is sandwich style sandwich, and the middle part of described sandwich is luminous element;
Comprise respectively, successively in the both sides of described luminous element
Be positioned at the electrically conducting transparent heat-conducting layer of described emitter surface, and
That be positioned at described electrically conducting transparent heat-conducting layer surface, that there is optical transmission window metal electrode layer.
Described electrically conducting transparent heat-conducting layer comprises glass electrically and thermally conductive adhesive, graphite conductive adhesive, electric conduction of carbon fiber heat-conducting glue or Graphene.
Between described metal electrode, there is insulation dielectric.
Described luminous element is gallium nitride based light emitting diode.
Described electrically conducting transparent heat-conducting layer comprises at least one deck.
Described metal level is layers of copper.
On the other hand, the manufacture method of luminescent device of the present invention, comprising:
Substrate is provided, forms luminous element at described substrate surface;
At the attached silicon substrate of described emitter surface note;
Peel off described substrate;
Graphical treatment is carried out to described silicon substrate;
The silicon substrate of cutting pattern and luminous element form single light emitter chip;
The patterned sheet metal that its surface has electrically conducting transparent heat-conducting layer and optical transmission window is attached on described light emitter chip surface;
Peel off described silicon substrate;
The patterned sheet metal that its surface has electrically conducting transparent heat-conducting layer and optical transmission window is attached at another exposed surface of described light emitter chip;
Dielectric is filled between described sheet metal.
Described substrate is Sapphire Substrate, and described luminous element is gallium nitride based light emitting diode.
The method of described attaching comprises bonding or sticky note.
Described sheet metal is the pellet electrode of copper product.
The method of described stripping comprises laser lift-off or wet etching.
Accompanying drawing explanation
By the more specifically explanation of the preferred embodiments of the present invention shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawing indicates identical part.Deliberately do not draw accompanying drawing in proportion, focus on purport of the present invention is shown.
Fig. 1 is the structural representation of GaN base light-emitting diode;
Fig. 2 to Fig. 9 is the device architecture schematic diagram that the inventive method embodiment is described;
Fig. 9 is the structural representation of light emitting semiconductor device of the present invention.
Described diagram is illustrative, and nonrestrictive, can not excessively limit the scope of the invention at this.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public specific embodiment.
Fig. 9 is the structural representation of light emitting semiconductor device of the present invention.As shown in Figure 9, luminescent device of the present invention is sandwich style sandwich, and the middle part of described sandwich is luminous element 200; In the both sides of described luminous element 200, comprise the electrically conducting transparent heat-conducting layer 311 and 320 being positioned at described luminous element 200 surface respectively successively, and be positioned at described electrically conducting transparent heat-conducting layer 311 and 320 surface, the metal electrode lamella 300 and 321 with optical transmission window 10.Wherein, the material of electrically conducting transparent heat-conducting layer 311 and 320 can be conductive and heat-conductive glass cement, graphite conductive adhesive, electric conduction of carbon fiber heat-conducting glue or Graphene etc.Luminous element 200 is preferably gallium nitride based light emitting diode.Electrically conducting transparent heat-conducting layer 311 and 320 can be single layer structure, also can be the structure of multilayer build-up.The material of metal electrode film 300 and 321 is preferably copper, is filled with dielectric 20 between two electrodes.
This encapsulating structure adopts conductive and heat-conductive transparent material that luminous element is clamped in central mode, can reach the omnibearing luminous effect of two-sided bright dipping, reduce the interface of light in device layout process and the loss of multiple reflections.Because this structure adopts conductive and heat-conductive transparent material, forming effectively luminous gallium nitride surface region bright dipping increases; Due to the increase of heat transfer and transmitance, can junction temperature be reduced, effectively increase light extraction efficiency.In addition, this structure more easily forms the series and parallel connections of multi-chip, direct insertion installation or surface-mount type can be adopted to install, reduce the cost of encapsulation.
Fig. 2 to Fig. 9 is the device architecture schematic diagram that the inventive method embodiment is described.As shown in the figure, the manufacture method of luminescent device of the present invention, first provides substrate 100, such as Sapphire Substrate, forms luminous element 200 on substrate 100 surface.Luminous element 200 is preferably gallium nitride based light emitting diode, as shown in Figure 2.Then at luminous element 200 surface bond or sticky note one silicon substrate 400, as shown in Figure 3; Then, laser lift-off or wet-etching technology is utilized to remove described substrate 100, as shown in Figure 4; Next, graphical treatment is carried out to described silicon substrate 400; Silicon substrate 400 and the luminous element 200 of cutting pattern form single light emitter chip, as shown in Figure 5.
Then, as shown in Figure 6, glue at described luminous element 200 chip surface the patterned metal electrode film 300 that note or its surface of bonding have electrically conducting transparent heat-conducting layer 311 and optical transmission window 10; That is, electrically conducting transparent heat-conducting layer 311 and metal electrode film 300 can first be formed, and then graphically form pattern of windows.In other embodiments, also can first deposit transparent thermally conductive layer 311, then depositing metal layers, utilize gold-tinted technique to carry out graphical treatment to metal level, form the metal electrode film 300 with pattern of windows.
Then laser lift-off or wet corrosion technique is utilized to remove silicon substrate 400, as shown in Figure 7; In a next process step, the patterned metal electrode film 321 that note or another its surface of bonding have electrically conducting transparent heat-conducting layer 320 and optical transmission window 10 is glued on another exposed surface of luminous element 200 chip, that is, electrically conducting transparent heat-conducting layer 320 and metal electrode film 321 can first be formed, then graphically pattern of windows is formed, as shown in Figure 8; In other embodiments, also can first deposit transparent thermally conductive layer 320, then depositing metal layers, utilize gold-tinted technique to carry out graphical treatment to metal level, form the metal electrode film 321 with pattern of windows.
The length of metal electrode film 300 and 321 can, much larger than the length of luminous element 200, to form direct insertion structure, can directly be inserted on heat sink plate, as shown in Figure 9, will fill dielectric 20 between metal electrode film 300 and 321.Can transverse direction or longitudinal measure metal lead wire on electrode, form direct insertion device.Also can go between without the need to weld metal, directly use as surface-adhered type device.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.Any those of ordinary skill in the art, are not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the protection range of technical solution of the present invention.
Claims (5)
1. a manufacture method for luminescent device, comprising:
Substrate is provided, forms luminous element at described substrate surface;
At the attached silicon substrate of described emitter surface note;
Peel off described substrate;
Graphical treatment is carried out to described silicon substrate;
The silicon substrate of cutting pattern and luminous element form single light emitter chip;
The patterned sheet metal that its surface has electrically conducting transparent heat-conducting layer and optical transmission window is attached on described light emitter chip surface;
Peel off described silicon substrate;
The patterned sheet metal that its surface has electrically conducting transparent heat-conducting layer and optical transmission window is attached at another exposed surface of described light emitter chip;
Dielectric is filled between described sheet metal.
2. method according to claim 1, is characterized in that: described substrate is Sapphire Substrate, and described luminous element is gallium nitride based light emitting diode.
3. method according to claim 1, is characterized in that: the method for described attaching comprises bonding or stickup.
4. method according to claim 1, is characterized in that: described sheet metal is the pellet electrode of copper product.
5. method according to claim 1, is characterized in that: the method for described stripping comprises laser lift-off or wet etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210055291.5A CN102683550B (en) | 2012-03-06 | 2012-03-06 | Light emitting semiconductor device and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210055291.5A CN102683550B (en) | 2012-03-06 | 2012-03-06 | Light emitting semiconductor device and manufacture method thereof |
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| Publication Number | Publication Date |
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| CN102683550A CN102683550A (en) | 2012-09-19 |
| CN102683550B true CN102683550B (en) | 2015-11-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104218137B (en) * | 2013-06-05 | 2017-11-28 | 江苏豪迈照明科技有限公司 | LED light substrate, LED chip COB encapsulating structures and using the structure LED |
| CN103594568A (en) * | 2013-10-24 | 2014-02-19 | 天津三安光电有限公司 | Semiconductor device and manufacturing method thereof |
| CN105097863B (en) | 2015-06-25 | 2018-09-18 | 合肥京东方显示光源有限公司 | Array type dual emission device and preparation method thereof and double-side display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1784101A (en) * | 2004-11-30 | 2006-06-07 | 西门子（中国）有限公司 | Double side display organic electroluminescence light emitting device |
| CN102177488A (en) * | 2008-09-09 | 2011-09-07 | 娜我比可隆株式会社 | Keypad apparatus, mobile device comprising same, and keypad control method |
| CN202736967U (en) * | 2012-03-06 | 2013-02-13 | 泉州市博泰半导体科技有限公司 | Semiconductor luminescent device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007089117A1 (en) * | 2006-02-03 | 2007-08-09 | Lg Chem. Ltd. | Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1784101A (en) * | 2004-11-30 | 2006-06-07 | 西门子（中国）有限公司 | Double side display organic electroluminescence light emitting device |
| CN102177488A (en) * | 2008-09-09 | 2011-09-07 | 娜我比可隆株式会社 | Keypad apparatus, mobile device comprising same, and keypad control method |
| CN202736967U (en) * | 2012-03-06 | 2013-02-13 | 泉州市博泰半导体科技有限公司 | Semiconductor luminescent device |
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| CN102683550A (en) | 2012-09-19 |
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