CN102682705A - Active matrix organic light emitting diode (AMOLED) pixel driving circuit - Google Patents
Active matrix organic light emitting diode (AMOLED) pixel driving circuit Download PDFInfo
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- CN102682705A CN102682705A CN2012101838498A CN201210183849A CN102682705A CN 102682705 A CN102682705 A CN 102682705A CN 2012101838498 A CN2012101838498 A CN 2012101838498A CN 201210183849 A CN201210183849 A CN 201210183849A CN 102682705 A CN102682705 A CN 102682705A
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- 229920001621 AMOLED Polymers 0.000 title claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 95
- 239000003990 capacitor Substances 0.000 abstract description 17
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 8
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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Abstract
The invention relates to an electronic circuit technology and particularly relates to an active matrix organic light emitting diode (AMOLED) pixel driving circuit. Six P type thin film transistors and a capacitor are built to form the circuit, the circuit has four signal input lines which are respectively a first scanning signal line, a second scanning signal line, a data signal line and a control signal line, and the circuit can offset threshold voltage Vth and external input voltage Vdd in the process of AMOLED driving by controlling the four input signal lines. The circuit has the advantages that an AMOLED circuit can be achieved, the threshold voltage Vth and the external input voltage Vdd are offset simultaneously, and the AMOLED display effect is improved effectively.
Description
Technical field
The present invention relates to electronic circuit technology, relate to a kind of AMOLED pixel-driving circuit specifically.
Background technology
AMOLED (active matrix organic light-emitting diode (AMOLED) panel) is called as display technique of future generation, and present AMOLED pixel-driving circuit is as shown in Figure 1: include OLED, capacitor C, the first transistor TFT1, transistor seconds TFT2, the 3rd transistor T FT3, the 4th transistor T FT4, the 5th transistor T FT5 and the 6th transistor PTFT; Wherein, The grid of the first transistor TFT1 connects first scan signal line, source electrode connects data signal line, an end of drain electrode connection capacitor C and the source electrode of transistor seconds TFT2; The grid of transistor seconds TFT2 connects second scan signal line; The grid of the 3rd transistor T FT3 connects source electrode, the drain electrode that first scan signal line, source electrode connect the drain electrode of the 4th transistor T FT4 and the 6th transistor PTFT and is connected the other end of capacitor C and the grid of the 6th transistor PTFT; Positive pole, grid that the source electrode of the 5th transistor T FT5 connects the drain electrode of the 6th transistor PTFT and Organic Light Emitting Diode are connected first scan signal line; The source electrode of the 4th transistor T FT4 connects positive source Vdd, and the drain electrode of the drain electrode of transistor seconds TFT2, the 5th transistor T FT5 and the negative pole of Organic Light Emitting Diode all are connected power cathode Vss.
As shown in Figure 2; The present concrete principle of work of AMOLED pixel-driving circuit is: in first scan signal line, second scan signal line and data signal line input T (1) stage; The first transistor TFT1, transistor seconds TFT2, the 3rd transistor T FT3 and the 4th all conductings of transistor T FT4; Capacitor C charging this moment, the A point voltage will be near Vdd; In T (2) stage; The first transistor TFT1, the 3rd transistor T FT3 and the 5th transistor T FT5 conducting; Transistor seconds TFT2 and the 4th transistor T FT4 end; This moment, the A point voltage will be through the 3rd transistor T FT3, the 6th transistor T FT6 and the 5th transistor T FT5 discharge, and voltage becomes transistorized threshold voltage Vth (needed grid was to the bias voltage of source electrode when threshold voltage Vth was meant transistor turns), and the B point voltage is maintained data signal line voltage Vdata; In T (3) stage, the first transistor TFT1, transistor seconds TFT2, the 3rd transistor T FT3, the 4th transistor T FT4 and the 5th transistor T FT5 all end, and this stage A, B two point voltages remain unchanged; In T (4) stage; The first transistor TFT1, the 3rd transistor T FT3 and the 5th transistor T FT5 end; Transistor seconds TFT2 and the 4th transistor T FT4 conducting, this moment, Organic Light Emitting Diode was luminous, and the B point voltage becomes 0; The saltus step of A point voltage is to Vth+Vdata, thus the compensation of realization threshold voltage Vth.Though present AMOLED pixel-driving circuit has been realized the compensation of threshold voltage Vth, supply voltage Vdd has the loss of voltage along with cabling, make each pixel Vth and Vdd is not of uniform size causes, cause the decline of AMOLED display quality.
Summary of the invention
Technical matters to be solved by this invention is exactly the deficiency to existing AMOLED pixel-driving circuit, proposes a kind of driving circuit that can realize surge valve threshold voltage Vth and supply voltage Vdd simultaneously, improves AMOLED screen display quality.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: the AMOLED pixel-driving circuit comprises: Organic Light Emitting Diode, electric capacity, a P type thin film transistor (TFT), the 2nd P type thin film transistor (TFT), the 3rd P type thin film transistor (TFT), the 4th P type thin film transistor (TFT), the 5th P type thin film transistor (TFT) and the 6th P type thin film transistor (TFT);
The grid of the one P type thin film transistor (TFT) connects first scan signal line, source electrode is connected with the drain electrode of the 4th P type thin film transistor (TFT) and an end of electric capacity; The drain electrode of the 2nd P type thin film transistor (TFT) is connected with the source electrode of the 3rd P type thin film transistor (TFT), grid and the drain electrode of the 3rd P type thin film transistor (TFT) and the grid of the 6th P type thin film transistor (TFT) and the other end of electric capacity are connected; The grid of the 3rd P type thin film transistor (TFT) connects second scan signal line; The grid connection control signal line of the 4th P type thin film transistor (TFT) and the 5th P type thin film transistor (TFT); The source electrode of the 4th P type thin film transistor (TFT) connects data signal line; The drain electrode of the 5th P type thin film transistor (TFT) is connected with the source electrode of the 6th P type thin film transistor (TFT); The drain electrode of the 6th P type thin film transistor (TFT) is connected with the positive pole of Organic Light Emitting Diode; The drain electrode of the one P type thin film transistor (TFT), the negative pole of Organic Light Emitting Diode all are connected with power cathode, and the source electrode of the source electrode of the 2nd P type thin film transistor (TFT), the 5th P type thin film transistor (TFT) all is connected with positive source, and the 2nd P type thin film transistor (TFT) has identical threshold voltage with the 6th P type thin film transistor (TFT).
Beneficial effect of the present invention is that realization can highly effective raising AMOLED display effect to AMOLED driving circuit while surge valve threshold voltage Vth and outside input supply voltage Vdd.
Description of drawings
Fig. 1 is traditional AMOLED pixel-driving circuit synoptic diagram;
Fig. 2 is traditional AMOLED pixel-driving circuit principle of work synoptic diagram;
Fig. 3 is an AMOLED pixel-driving circuit synoptic diagram of the present invention;
Fig. 4 is an AMOLED pixel-driving circuit principle of work synoptic diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further description.
The present invention is directed to the deficiency of conventional art, propose a kind of novel AMOLED pixel-driving circuit, improve the display quality of AMOLED panel.With respect to conventional art, its improvement is: adopt the method for coupling DTFT, realize surge valve threshold voltage Vth and external input voltage Vdd simultaneously, thereby effectively improve the display effect of AMOLED.
As shown in Figure 3; AMOLED pixel-driving circuit among the present invention includes OLED OLED, capacitor C, a P type thin film transistor (TFT) PTFT1, the 2nd P type thin film transistor (TFT) PTFT2, the 3rd P type thin film transistor (TFT) PTFT3, the 4th P type thin film transistor (TFT) PTFT4, the 5th P type thin film transistor (TFT) PTFT5 and the 6th P type thin film transistor (TFT) PTFT6; The grid of the one P type thin film transistor (TFT) PTFT1 connects first scan signal line, source electrode is connected with the drain electrode of the 4th P type thin film transistor (TFT) PTFT4 and an end of capacitor C; The drain electrode of the 2nd P type thin film transistor (TFT) PTFT2 is connected with the source electrode of the 3rd P type thin film transistor (TFT) PTFT3, grid and the drain electrode of the 3rd P type thin film transistor (TFT) PTFT3 and the grid of the 6th P type thin film transistor (TFT) PTFT6 and the other end of capacitor C are connected; The grid of the 3rd P type thin film transistor (TFT) PTFT3 connects second scan signal line; The grid connection control signal line of the 4th P type thin film transistor (TFT) PTFT4 and the 5th P type thin film transistor (TFT) PTFT5; The source electrode of the 4th P type thin film transistor (TFT) PTFT4 connects data signal line; The drain electrode of the 5th P type thin film transistor (TFT) PTFT5 is connected with the source electrode of the 6th P type thin film transistor (TFT) PTFT6; The drain electrode of the 6th P type thin film transistor (TFT) PTFT6 is connected with the positive pole of Organic Light Emitting Diode OLED; The drain electrode of the one P type thin film transistor (TFT) PTFT1, the negative pole of Organic Light Emitting Diode OLED all are connected with power cathode VSS, and the source electrode of the source electrode of the 2nd P type thin film transistor (TFT) PTFT2, the 5th P type thin film transistor (TFT) PTFT5 all is connected with positive source VDD.
Wherein the 2nd P type thin film transistor (TFT) PTFT2 and the 6th P type thin film transistor (TFT) PTFT6 mate pipe each other, have equal threshold voltage, their production location next-door neighbour in side circuit.
Specify principle of work of the present invention below in conjunction with accompanying drawing 4: in sequential cycle T (1) stage; First scan signal line is that low level, second scan signal line are that high level, data signal line are that low level and control signal wire are high level; The one P type thin film transistor (TFT) PTFT1 conducting this moment; The 3rd P type thin film transistor (TFT) PTFT3, the 4th P type thin film transistor (TFT) PTFT4 and the 5th P type thin film transistor (TFT) PTFT5 end; Capacitor C is communicated with voltage negative pole VSS, so the B terminal voltage of capacitor C is 0; In T (2) stage; First scan signal line is that high level, second scan signal line are that low level, data signal line are that low level and control signal wire are high level; This moment, the one P type thin film transistor (TFT) PTFT1 ended; The 2nd P type thin film transistor (TFT) PTFT2, the 3rd P type thin film transistor (TFT) PTFT3 conducting; The 4th P type thin film transistor (TFT) PTFT4 and the 5th P type thin film transistor (TFT) PTFT5 end, this moment positive source VDD to the electric capacity input voltage, the A terminal voltage of capacitor C is: Va=Vdd+Vth through the 2nd P type thin film transistor (TFT) PTFT2 and the 3rd P type thin film transistor (TFT) PTFT3; In T (3) stage; First scan signal line is that high level, second scan signal line are that high level, data signal line are that high level and control signal wire are low level; A P type thin film transistor (TFT) PTFT1, the 3rd P type thin film transistor (TFT) PTFT3 end at this moment; The 2nd P type thin film transistor (TFT) PTFT2, the 4th P type thin film transistor (TFT) PTFT4, the 5th P type thin film transistor (TFT) PTFT5 and the 6th P type thin film transistor (TFT) PTFT6 conducting; This moment, capacitor C was communicated with data signal line, and Vdata charges to capacitor C through the 4th P type thin film transistor (TFT) PTFT4, and the B terminal voltage variable quantity of capacitor C is Vdata; This moment, the A of capacitor C held thereupon that voltage variety is Vdata; The A terminal voltage control of capacitor C is through the luminous electric current of the 6th P type thin film transistor (TFT) PTFT6 driving OLED, and this moment, the A terminal voltage of capacitor C was Va=Vdata+Vth+Vdd, because the 2nd P type thin film transistor (TFT) PTFT2 and the 6th P type thin film transistor (TFT) PTFT6 mate pipe each other; Their threshold voltage Vth equates; The 6th P type thin film transistor (TFT) PTFT6 there is Vgs-Vth=Vdata (Vgs be the grid of PTFT and the voltage between the source electrode), thereby has eliminated threshold voltage Vth and supply voltage Vdd influence, according to the OLED current formula I=K (Vgs-Vth) that flows through OLED
2Can know, compensate after-current I with more stable when realizing, thereby effectively improve the AMOLED display quality threshold voltage Vth and supply voltage Vdd.
Claims (1)
1.AMOLED pixel-driving circuit comprises: Organic Light Emitting Diode, electric capacity, a P type thin film transistor (TFT), the 2nd P type thin film transistor (TFT), the 3rd P type thin film transistor (TFT), the 4th P type thin film transistor (TFT), the 5th P type thin film transistor (TFT) and the 6th P type thin film transistor (TFT);
The grid of the one P type thin film transistor (TFT) connects first scan signal line, source electrode is connected with the drain electrode of the 4th P type thin film transistor (TFT) and an end of electric capacity; The drain electrode of the 2nd P type thin film transistor (TFT) is connected with the source electrode of the 3rd P type thin film transistor (TFT), grid and the drain electrode of the 3rd P type thin film transistor (TFT) and the grid of the 6th P type thin film transistor (TFT) and the other end of electric capacity are connected; The grid of the 3rd P type thin film transistor (TFT) connects second scan signal line; The grid connection control signal line of the 4th P type thin film transistor (TFT) and the 5th P type thin film transistor (TFT); The source electrode of the 4th P type thin film transistor (TFT) connects data signal line; The drain electrode of the 5th P type thin film transistor (TFT) is connected with the source electrode of the 6th P type thin film transistor (TFT); The drain electrode of the 6th P type thin film transistor (TFT) is connected with the positive pole of Organic Light Emitting Diode; The drain electrode of the one P type thin film transistor (TFT), the negative pole of Organic Light Emitting Diode all are connected with power cathode, and the source electrode of the source electrode of the 2nd P type thin film transistor (TFT), the 5th P type thin film transistor (TFT) all is connected with positive source, and the 2nd P type thin film transistor (TFT) has identical threshold voltage with the 6th P type thin film transistor (TFT).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210183849.8A CN102682705B (en) | 2012-06-06 | 2012-06-06 | Active matrix organic light emitting diode (AMOLED) pixel driving circuit |
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| CN201210183849.8A CN102682705B (en) | 2012-06-06 | 2012-06-06 | Active matrix organic light emitting diode (AMOLED) pixel driving circuit |
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| CN102682705A true CN102682705A (en) | 2012-09-19 |
| CN102682705B CN102682705B (en) | 2014-05-28 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258501A (en) * | 2013-05-21 | 2013-08-21 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof |
| CN103295528A (en) * | 2013-05-14 | 2013-09-11 | 友达光电股份有限公司 | Light emitting diode module |
| CN104091563A (en) * | 2014-06-27 | 2014-10-08 | 京东方科技集团股份有限公司 | Pixel circuit as well as driving method, organic light-emitting display panel and display device thereof |
| CN104167168A (en) * | 2014-06-23 | 2014-11-26 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof and display device |
| CN104537984A (en) * | 2013-05-21 | 2015-04-22 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof |
| US9198260B1 (en) | 2014-06-18 | 2015-11-24 | Everdisplay Optronics (Shanghai) Limited | Light-emitting signal control circuits |
| EP2988195A4 (en) * | 2013-04-18 | 2016-11-16 | Beijing Boe Chatani Electronics Co Ltd | Touch display circuit structure and driving method thereof, array substrate and display device |
| US9652095B2 (en) | 2014-05-29 | 2017-05-16 | Boe Technology Group Co., Ltd. | Pixel circuit, method for driving the same, organic light-emitting diode display panel, and display device |
| CN107103880A (en) * | 2017-06-16 | 2017-08-29 | 京东方科技集团股份有限公司 | Pixel-driving circuit and its driving method, array base palte and display device |
| CN107230453A (en) * | 2017-07-11 | 2017-10-03 | 深圳市华星光电半导体显示技术有限公司 | AMOLED pixel-driving circuits and AMOLED image element driving methods |
| CN113539171A (en) * | 2021-07-27 | 2021-10-22 | 深圳市华星光电半导体显示技术有限公司 | Display pixel circuit, display pixel circuit driving method and display panel |
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Cited By (20)
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| US9529467B2 (en) | 2013-04-18 | 2016-12-27 | Boe Technology Group Co., Ltd. | Touch display circuit, driving method thereof, array substrate and display apparatus |
| EP2988195A4 (en) * | 2013-04-18 | 2016-11-16 | Beijing Boe Chatani Electronics Co Ltd | Touch display circuit structure and driving method thereof, array substrate and display device |
| CN103295528B (en) * | 2013-05-14 | 2016-01-13 | 友达光电股份有限公司 | Light emitting diode module |
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| US9495904B2 (en) | 2013-05-14 | 2016-11-15 | Au Optronics Corp. | Light emitting diode module |
| CN104537984A (en) * | 2013-05-21 | 2015-04-22 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof |
| CN103258501B (en) * | 2013-05-21 | 2015-02-25 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof |
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| US9652095B2 (en) | 2014-05-29 | 2017-05-16 | Boe Technology Group Co., Ltd. | Pixel circuit, method for driving the same, organic light-emitting diode display panel, and display device |
| US9198260B1 (en) | 2014-06-18 | 2015-11-24 | Everdisplay Optronics (Shanghai) Limited | Light-emitting signal control circuits |
| CN104167168B (en) * | 2014-06-23 | 2016-09-07 | 京东方科技集团股份有限公司 | Image element circuit and driving method thereof and display device |
| CN104167168A (en) * | 2014-06-23 | 2014-11-26 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof and display device |
| CN104091563A (en) * | 2014-06-27 | 2014-10-08 | 京东方科技集团股份有限公司 | Pixel circuit as well as driving method, organic light-emitting display panel and display device thereof |
| US9727186B2 (en) | 2014-06-27 | 2017-08-08 | Boe Technology Group Co., Ltd. | Pixel circuit, driving methods thereof, organic light emitting diode display panel, and display device |
| US9983755B2 (en) | 2014-06-27 | 2018-05-29 | Boe Technology Group Co., Ltd. | Pixel circuit, driving methods thereof, organic light emitting diode display panel, and display device |
| CN107103880A (en) * | 2017-06-16 | 2017-08-29 | 京东方科技集团股份有限公司 | Pixel-driving circuit and its driving method, array base palte and display device |
| WO2018227963A1 (en) * | 2017-06-16 | 2018-12-20 | 京东方科技集团股份有限公司 | Pixel circuit and driving method therefor, array substrate and display device |
| US11302241B2 (en) * | 2017-06-16 | 2022-04-12 | Boe Technology Group Co., Ltd. | Pixel circuit for compensation for threshold voltage and driving method thereof |
| CN107230453A (en) * | 2017-07-11 | 2017-10-03 | 深圳市华星光电半导体显示技术有限公司 | AMOLED pixel-driving circuits and AMOLED image element driving methods |
| CN113539171A (en) * | 2021-07-27 | 2021-10-22 | 深圳市华星光电半导体显示技术有限公司 | Display pixel circuit, display pixel circuit driving method and display panel |
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