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CN102681358A - Space image detection-based projection objective wave aberration in-situ measurement method - Google Patents

Space image detection-based projection objective wave aberration in-situ measurement method Download PDF

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CN102681358A
CN102681358A CN2012101157595A CN201210115759A CN102681358A CN 102681358 A CN102681358 A CN 102681358A CN 2012101157595 A CN2012101157595 A CN 2012101157595A CN 201210115759 A CN201210115759 A CN 201210115759A CN 102681358 A CN102681358 A CN 102681358A
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projection objective
objective lens
aerial image
illumination
light source
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CN102681358B (en
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段立峰
王向朝
徐东波
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Abstract

一种基于空间像检测的投影物镜波像差原位测量方法，该方法通过安装在工件台上的图像传感器测量具有不同方向取向的掩模标记对应的空间像光强分布，之后通过标定好的灵敏度矩阵计算得到投影物镜波像差。灵敏度矩阵可利用光刻物理仿真软件进行标定。相比于在先技术，本方法可以更为全面的检测投影物镜波像差。

Figure 201210115759

An in-situ measurement method for wave aberration of projection objective lens based on aerial image detection, the method measures the spatial image light intensity distribution corresponding to mask marks with different orientations through the image sensor installed on the workpiece table, and then passes the calibrated The sensitivity matrix is calculated to obtain the projected objective lens wave aberration. The sensitivity matrix can be calibrated using lithography physics simulation software. Compared with the prior art, the method can more comprehensively detect the wave aberration of the projected objective lens.

Figure 201210115759

Description

Projection objective wave aberration in-situ measuring method based on the aerial image detection
Technical field
The present invention relates to the projection lens of lithography machine aberration, particularly a kind of projection objective wave aberration in-situ measuring method that detects based on aerial image.
Background technology
Make the field at integrated circuit, the projection imaging litho machine that the pattern on the mask is transferred on the silicon chip via imaging system is known.Projection objective system is one of crucial subsystem in the litho machine.
The projection objective aberration is the key factor that influences image forming quality of photoetching machine.Projection objective wave aberration can be divided into strange aberration and idol poor.Wherein, strange aberration comprises that mainly coma and three ripples are poor, and the idol difference mainly comprises spherical aberration and astigmatism.Strange aberration changes the graph position of making public to the silicon chip, thereby causes the alignment error.The optimal focal plane of the figure of idol official post exposure changes, thereby influences the resolution of litho machine.Along with constantly diminishing of lithographic feature size, the especially use of RET, the projection objective aberration becomes more and more obvious to the influence of photoetching quality.Therefore, for alignment precision and the resolution that guarantees litho machine meets the demands, comprehensive, high-precision wave aberration detection technique is indispensable.
In the former work, we proposed a kind of photoetching projection objective lens wave aberration detection technique based on the aerial image principal component analysis (PCA) (referring to formerly the technology [1], Lifeng Duan; Xiangzhao Wang, Anatoly Y.Bourov, Bo Peng; And Peng Bu, " In situ aberration measurement technique based on principal component analysis ofaerial image, " Opt.Express 19; 18080-18090 (2011)).The test badge of formerly technological employing level and vertical both direction; Under a kind of light illumination mode; Test badge forms aerial image through projection objective; Utilize the transmission-type image-position sensor be positioned on the work stage to obtain the aerial image light distribution of mask test badge under different lighting conditions afterwards, and according to the wave aberration of aerial image light intensity Inversion Calculation projection objective.Formerly the technology for detection precision is high, and speed is fast; But, can only be used to detect low order aberration Z because the mask test badge has only both direction 5, Z 7, Z 8, Z 9, Z 14, Z 15, Z 16, can't detect high-order Ze Nike aberration more.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of projection objective wave aberration in-situ measuring method that detects based on aerial image.The mask label space that has different orientation through the imageing sensor measurement that is installed on the work stage can be used in and detects Z as light distribution 5-Z 37Totally 33 Ze Nike aberrations.
Technical solution of the present invention is following:
A kind of projection objective wave aberration in-situ measuring method that detects based on aerial image; The measuring system that this method adopts comprises the light source, the illuminator that can adjust lighting system and illumination numerical aperture that are used to produce illuminating bundle, is used for the bearing test mask and can realizes pinpoint mask platform, be used for mask graph be imaged onto projection objective system on the silicon chip, can pinpoint sextuple scanning work stage, be installed in 6 DOF and scan aerial image sensor on the work stage and the data handling machine that links to each other with work stage, it is characterized in that this method may further comprise the steps:
1. the simulation space image set foundation of closing:
Adopt traditional B ox-Behnken Design statistical sampling mode or other statistical sampling mode to set zernike coefficient Z 5～Z 37Combination ZM.The parameter of selected litho machine: the lighting system of illuminator and partial coherence factor thereof; The wavelength that uses of litho machine laser instrument is λ; The numerical aperture NA of projection objective; Arrangement test mask on mask platform, the test badge on this test mask are isolated lines combination or isolate idle pattern that this combination comprises m isolated lines or isolate sky and each isolated lines or isolated sky to have different direction orientations.Described m isolated lines or isolated empty different directions are oriented to 0 °, and 180 °/N, 2 * 180 °/N; 3 * 180 °/N ..., (N-1) * 180 °/N; Any m direction during 180 ° N+1 direction is orientated altogether, wherein m and N are positive integer and the m≤N more than or equal to 6; The aerial image acquisition range: the directions X acquisition range is [L, L], and Z direction acquisition range is [F, F]; The aerial image sampling number: the directions X sampling number is M, and it is N that the Z direction is gathered sampling number; With above-mentioned parameter design and zernike coefficient combination ZM input computing machine, adopt PROLITH or other lithography simulation software to carry out emulation, obtain the simulation space image set and close AIM;
2. the demarcation of sensitivity matrix between aerial image characteristic coefficient and the zernike coefficient:
The simulation space image set is closed AIM carry out traditional principal component analysis (PCA), obtain the major component and the corresponding characteristic coefficient that can characterize aerial image.The simulation space image set is closed AIM uses formula (1) to carry out traditional principal component analysis (PCA):
AIM＝PC·V (1)
Wherein, PC is the major component that simulation space image set that principal component analysis (PCA) obtains closes, and V representes the characteristic of correspondence coefficient that the simulation space image set closes;
Described characteristic coefficient V and described zernike coefficient are made up ZM as given data, adopt conventional least square fitting method to use formula (2) meter sensitivity matrix S:
V＝ZM·S (2)
Wherein, be the aerial image characteristic coefficient of demarcation and the sensitivity matrix between the zernike coefficient.
3. start litho machine and gather aerial image:
Parameter to the projection objective of litho machine to be detected is provided with, and parameter synchronization suddenly 1.; Start litho machine; The illumination light that light source sends obtains corresponding lighting system after the illuminator adjustment; Shine the test mask on the mask platform; Utilize the aerial image sensor measurement through the corresponding aerial image of multi-direction test badge that projection objective converges, after the check measurement result is errorless, will surveys aerial image and import said computer stored;
4. finding the solution of Ze Nike aberration:
Computing machine is to described actual measurement aerial image; Carry out the major component match according to conventional method; Obtain surveying the characteristic coefficient of aerial image; The characteristic coefficient of this actual measurement aerial image carries out least square fitting with the sensitivity matrix S that step obtains in 2. by conventional method, obtains the Ze Nike aberration of the projection lens of lithography machine of surveying.
Described setting photo-etching machine illumination pattern comprises traditional lighting and off-axis illumination.
The span of described L is: 3000nm >=L >=450nm; The span of F is 5000nm >=F >=2000nm; The span of M is M >=20, and the span of N is N >=13.
Described light source comprises mercury lamp, 193nm LASER Light Source, 248nm LASER Light Source, 157nm LASER Light Source, EUV light source.
Described imageing sensor comprises CMOS, CCD or photodiode.
Described travelling workpiece platform is included in x, the y plane and moves and moving along the z direction along what any direction carried out.
Said projection objective is total transmissivity formula, total-reflection type and catadioptric formula projection objective, and the numeric aperture values of projection objective is 0≤NA≤1.
With compared with techniques formerly, the present invention has the following advantages:
The present invention proposes a kind of projection objective wave aberration in-situ measuring method that detects based on aerial image, through adopting multidirectional test mask mark, increased sample information, all high-precision test Ze Nike aberration Z the projection objective pupil 5-Z 37
Description of drawings
The projection objective wave aberration in-situ measuring method system construction drawing that Fig. 1 the present invention is adopted based on the aerial image detection.
The structural representation of the mask mark that Fig. 2 the present invention is adopted.
The projection objective wave aberration precision figure that Fig. 3 uses the present invention to measure.
Embodiment
Below in conjunction with embodiment and accompanying drawing the present invention is described further, but should be with this embodiment restriction protection scope of the present invention.
See also Fig. 1 earlier, Fig. 1 is the measuring system structural representation that the present invention adopts.Produce the light source 1 of illuminating bundle; Light source sends the illuminator 2 of beam waist, light distribution, partial coherence factor and the lighting system of light beam under being used to adjust; Also can realize pinpoint mask platform 4 Deng enough bearing test masks 3; Be used for the projection objective 5 that mask graph is imaged onto on the silicon chip and numerical aperture is adjustable, can scan work stage 6 and be installed in the aerial image sensor 7 on the sextuple scanning work stage, the data handling machine 8 that links to each other with work stage by pinpoint 6 DOF.
Concrete measuring process comprises following four steps:
1. the simulation space image set foundation of closing:
Adopt traditional B ox-Behnken Design statistical sampling mode to set zernike coefficient Z 5～Z 37Combination ZM.The parameter of selected litho machine: the lighting system of illuminator is the ring illumination in the off-axis illumination mode, and its partial coherence factor is [σ Outσ In]=[0.68 0.44]; The wavelength that uses of litho machine laser instrument is 193nm; The numerical aperture NA of projection objective is 0.75; Arrangement test mask on mask platform, the test badge on this test mask is isolated lines combination, this combination comprises that 8 isolated lines and each isolated lines have different direction orientations.The different directions of described 8 isolated lines is oriented to 0 °, and is 30 °, 45 °, 60 °, 90 °, 120 °, 135 °, 150 °, as shown in Figure 2; The aerial image acquisition range: the directions X acquisition range is [900nm, 900nm], and Z direction acquisition range is [3500nm, 3500nm]; The aerial image sampling number: the directions X sampling number is 61, and it is 57 that the Z direction is gathered sampling number; With above-mentioned parameter design and zernike coefficient combination ZM input computing machine, adopt PROLITH or other lithography simulation software to carry out emulation, obtain the simulation space image set and close AIM;
2. the demarcation of sensitivity matrix between aerial image characteristic coefficient and the zernike coefficient:
The simulation space image set is closed AIM carry out traditional principal component analysis (PCA), obtain the major component and the corresponding characteristic coefficient that can characterize aerial image.The simulation space image set is closed AIM to carry out traditional principal component analysis (PCA) and can use formula (1) to carry out.
AIM＝PC·V (3)
Wherein, PC is the major component that simulation space image set that principal component analysis (PCA) obtains closes, and V representes the characteristic of correspondence coefficient that the simulation space image set closes.
Characteristic coefficient V described in the formula (1) and the step zernike coefficient combination ZM described in 1. as given data, is adopted conventional least square fitting method meter sensitivity matrix.The meter sensitivity matrix uses formula (2) to carry out
V＝ZM·S (4)
Wherein, S is the aerial image characteristic coefficient of demarcation and the sensitivity matrix between the zernike coefficient.
3. start litho machine and gather aerial image:
Parameter to the projection objective of litho machine to be detected is provided with, and parameter synchronization suddenly 1.; Start litho machine; The illumination light that light source sends obtains corresponding lighting system after the illuminator adjustment; Shine the test mask on the mask platform; Utilize the aerial image sensor measurement through the corresponding aerial image of multi-direction test badge that projection objective converges, after the check measurement result is errorless, will surveys aerial image and import said computer stored;
4. finding the solution of Ze Nike aberration:
Computing machine is to described actual measurement aerial image; 2. described major component PC carries out the major component match according to conventional method with step; Obtain surveying the characteristic coefficient of aerial image, the characteristic coefficient of this actual measurement aerial image carries out least square fitting with the sensitivity matrix S that step obtains in 2. by conventional method; Obtain the Ze Nike aberration of the projection lens of lithography machine of surveying, solving result is as shown in Figure 3.
With respect to formerly the technology [1], this method can more comprehensive high Precision Detection projection objective wave aberration.

Claims (7)

1.一种基于空间像检测的投影物镜波像差原位测量方法，该方法采用的测量系统包括用于产生照明光束的光源(1)、能调整照明方式以及照明数值孔径的照明系统(2)、用于承载测试掩模(3)并能实现精确定位的掩模台(4)、用于将掩模图形成像到硅片上的投影物镜系统(5)、能精确定位的六维扫描工件台(6)、安装在六维扫描工件台上的空间像传感器(7)以及与工件台相连的数据处理计算机(8)，其特征在于本方法包括以下步骤：1. An in-situ measurement method of projection objective lens wave aberration based on aerial image detection, the measurement system adopted in the method comprises a light source (1) for producing an illumination light beam, an illumination system (2) capable of adjusting illumination mode and illumination numerical aperture ), a mask table (4) for carrying a test mask (3) and enabling precise positioning, a projection objective lens system (5) for imaging the mask pattern onto a silicon wafer, and a six-dimensional scanning system capable of precise positioning The workpiece table (6), the spatial image sensor (7) installed on the six-dimensional scanning workpiece table and the data processing computer (8) connected to the workpiece table are characterized in that the method comprises the following steps: ①仿真空间像集合的建立：①Establishment of simulation space image set: 采用传统Box-Behnken Design统计抽样方式或其它统计抽样方式设定泽尼克系数Z5～Z37的组合ZM；选定光刻机的参数：照明系统的照明方式及其部分相干因子，光刻机激光器的使用波长为λ，投影物镜的数值孔径NA；在掩模台上的安置测试掩模，该测试掩模上的测试标记为孤立线条组合或孤立空组合，该组合包括m个孤立线条或孤立空且每个孤立线条或孤立空具有不同的方向取向；所述的m个孤立线条或孤立空的不同方向取向为0°，180°/N，2×180°/N，3×180°/N，...，(N-1)×180°/N，180°共N+1个方向中的任意m个方向，其中m和N均为大于等于6的正整数且m≤N；空间像采集范围：X方向采集范围为[-L，L]，Z方向采集范围为[-F，F]；空间像采样点数：X方向采样点数为M，Z方向采集采样点数为N；将上述参数设计和泽尼克系数组合ZM输入计算机，采用PROLITH或其它光刻仿真软件进行仿真，得到仿真空间像集合AIM；Use the traditional Box-Behnken Design statistical sampling method or other statistical sampling methods to set the combination ZM of Zernike coefficients Z 5 to Z 37 ; select the parameters of the lithography machine: the illumination mode of the lighting system and its partial coherence factor, the lithography machine The use wavelength of the laser is λ, the numerical aperture NA of the projection objective lens; a test mask is placed on the mask table, and the test mark on the test mask is a combination of isolated lines or an isolated space combination, and the combination includes m isolated lines or Isolated spaces and each isolated line or isolated space has a different orientation; the different orientations of the m isolated lines or isolated spaces are 0°, 180°/N, 2×180°/N, 3×180° /N,..., (N-1)×180°/N, 180°, any m directions in total N+1 directions, where m and N are both positive integers greater than or equal to 6 and m≤N; Aerial image collection range: X-direction collection range is [-L, L], Z-direction collection range is [-F, F]; aerial image sampling points: X-direction sampling points are M, Z-direction sampling points are N; The above parameter design and the Zernike coefficient combination ZM are input into the computer, and the simulation is carried out by using PROLITH or other lithography simulation software to obtain the simulation space image set AIM; ②空间像特征系数与泽尼克系数之间灵敏度矩阵的标定：② Calibration of sensitivity matrix between spatial image characteristic coefficient and Zernike coefficient: 对仿真空间像集合AIM进行传统主成分分析，获取表征空间像的主成分以及相应的特征系数；使用公式(1)对仿真空间像集合AIM进行主成分分析；Carry out traditional principal component analysis on the simulated aerial image set AIM, obtain the principal components representing the aerial image and the corresponding characteristic coefficients; use formula (1) to perform principal component analysis on the simulated aerial image set AIM; AIM＝PC·V    (1)AIM＝PC·V (1) 其中，PC为仿真空间像集合的主成分，V为对应的特征系数；Among them, PC is the principal component of the simulation spatial image set, and V is the corresponding characteristic coefficient; 将所述的特征系数V和所述的泽尼克系数组合ZM作为已知数据，采用常规最小二乘法拟合方法按公式(2)计算灵敏度矩阵S：With described characteristic coefficient V and described Zernike coefficient combination ZM as known data, adopt conventional least square method fitting method to calculate sensitivity matrix S by formula (2): V＝ZM·S    (2)V＝ZM·S (2) ③启动光刻机采集空间像：③Start the lithography machine to collect the space image: 对待检测的光刻机进行参数设置，参数同步骤①；启动光刻机，光源发出的照明光经照明系统调整后得到相应的照明方式，照射到掩模台上的测试掩模，利用空间像传感器测量经投影物镜汇聚的多方向测试标记对应的空间像，检查测量结果无误后，将实测空间像输入所述计算机储存；Set the parameters of the lithography machine to be tested, the parameters are the same as step ①; start the lithography machine, the illumination light emitted by the light source is adjusted by the lighting system to obtain the corresponding illumination mode, irradiate the test mask on the mask table, and use the spatial image The sensor measures the spatial images corresponding to the multi-directional test marks gathered by the projection objective lens, and after checking that the measurement results are correct, the measured spatial images are input into the computer for storage; ④泽尼克像差的求解：④ Solution of Zernike aberration: 计算机对所述的实测空间像，进行主成分拟合，得到实测空间像的特征系数，该实测空间像的特征系数同步骤②中得到的灵敏度矩阵S，按常规方法进行最小二乘拟合，得到所测光刻机投影物镜的泽尼克像差。Computer carries out principal component fitting to described measured spatial image, obtains the characteristic coefficient of measured spatial image, the characteristic coefficient of this measured spatial image is the same as the sensitivity matrix S that obtains in step 2., carries out least squares fitting according to conventional methods, The Zernike aberration of the projection objective lens of the measured lithography machine is obtained. 2.根据权利要求1所述的方法，其特征在于，所述的设定光刻机照明模式包括传统照明与离轴照明。2 . The method according to claim 1 , wherein said setting the illumination mode of the lithography machine includes conventional illumination and off-axis illumination. 3.根据权利要求1所述的方法，其特征在于，所述的L的取值范围为：3000nm≥L≥450nm；F的取值范围为5000nm≥F≥2000nm；M的取值范围为M≥20，N的取值范围为N≥13。3. The method according to claim 1, wherein the value range of L is: 3000nm≥L≥450nm; the value range of F is 5000nm≥F≥2000nm; the value range of M is M ≥20, and the value range of N is N≥13. 4.根据权利要求1所述的方法，其特征在于，所述的光源包括汞灯，193nm激光光源、248nm激光光源，157nm激光光源，EUV光源。4. The method according to claim 1, wherein the light source comprises a mercury lamp, a 193nm laser light source, a 248nm laser light source, a 157nm laser light source, and an EUV light source. 5.根据权利要求1所述的方法，其特征在于，所述的图像传感器包括CMOS，CCD或光电二极管。5. The method according to claim 1, wherein the image sensor comprises CMOS, CCD or photodiode. 6.根据权利要求1所述的方法，其特征在于，所述的移动工件台包括在x、y平面内沿任意方向进行的移动与沿z方向的移动。6 . The method according to claim 1 , wherein the moving workpiece stage includes movement along any direction in the x, y plane and movement along the z direction. 7 . 7.根据权利要求1所述的方法，其特征在于，所述投影物镜为全透射式、全反射式及折反式投影物镜，投影物镜的数值孔径值为0≤NA≤1。7 . The method according to claim 1 , wherein the projection objective lens is a total transmission type, a total reflection type, or a catadioptric projection lens, and the numerical aperture value of the projection objective lens is 0≤NA≤1.
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