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CN102665370A - Field emission x-ray generating apparatus - Google Patents

Field emission x-ray generating apparatus Download PDF

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Publication number
CN102665370A
CN102665370A CN2011104620635A CN201110462063A CN102665370A CN 102665370 A CN102665370 A CN 102665370A CN 2011104620635 A CN2011104620635 A CN 2011104620635A CN 201110462063 A CN201110462063 A CN 201110462063A CN 102665370 A CN102665370 A CN 102665370A
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China
Prior art keywords
current control
control resistor
field emission
cold cathode
emission element
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Pending
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Inventor
稻叶仁
鬼塚好弘
中村智宣
定塚淳生
小池高寿
福田康成
熊野光明
野口芳浩
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FUTEX Co Ltd
ONIZUKA GLASS CO Ltd
Takasago Thermal Engineering Co Ltd
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FUTEX Co Ltd
ONIZUKA GLASS CO Ltd
Takasago Thermal Engineering Co Ltd
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Publication of CN102665370A publication Critical patent/CN102665370A/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G1/00X-ray apparatus involving X-ray tubes; Circuits therefor
    • H05G1/08Electrical details
    • H05G1/26Measuring, controlling or protecting
    • H05G1/30Controlling
    • H05G1/32Supply voltage of the X-ray apparatus or tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06Cathodes
    • H01J35/065Field emission, photo emission or secondary emission cathodes

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  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • X-Ray Techniques (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

A FIELD EMISSION X-RAY tube (10) comprises a cold cathode (12) as an electronic emission element, a tens of kilovolt negative voltage from a DC power supply (21) is applied to the cold cathode (12) through a high voltage cable (22), at the periphery of the DC power supply (21) there is provided a first current control resistor (31), and further at the periphery of the cold cathode (12) there is provided a second current control resistor (41). Even though an overcurrent is generated due to inductance L and capacitance C parasitic in the high voltage cable (22) and flows into the cold cathode (12), the second current control resistor (41) can be used for preventing the overcurrent from flowing into the cold cathode (12) without any change, in order to seek for a long service life of the cold cathode (12), thereby dispensing with special electronic emission elements and obtaining a FIELD EMISSION X-RAY GENERATING APPARATUS with a long service life.

Description

场致发射型X射线产生装置Field emission type X-ray generator

技术领域 technical field

本发明涉及场致发射型X射线产生装置。The present invention relates to a field emission type X-ray generating device.

背景技术 Background technique

近年来,例如在平板显示器的制造工序中,使用了照射软X射线(微弱X射线:a soft X-ray)而生成离子,并利用其除静电(removestatic electricity)的技术。作为产生软X射线的装置,到目前为止一直使用灯丝(filament)方式的X射线产生装置,但是在该灯丝方式的X射线产生装置中,存在着消耗功率大这一问题。In recent years, for example, in the manufacturing process of flat panel displays, a technique of irradiating soft X-rays (weak X-rays: a soft X-ray) to generate ions and using them to remove static electricity has been used. As a device for generating soft X-rays, a filament-type X-ray generator has been used until now, but the filament-type X-ray generator has a problem of high power consumption.

因此,最近使用了场致发射型电子源的X射线管(场致发射型X射线管),由于能在常温发射电子所以能够将消耗功率抑制得较低,所以其作为现有的灯丝方式的X射线管的替代方式而备受期待。然而,当向场致发射型X射线管施加数kV~数十kV的高压电压时,存在着随着点亮时间的经过电子发射特性变差这一问题。因此,在最低限度要求数千小时以上的寿命的用途(例如除静电用)等中,实际情况是使用了场致发射型X射线管的装置未被实用化。Therefore, recently, an X-ray tube (field emission type X-ray tube) using a field emission type electron source can suppress power consumption low because it can emit electrons at room temperature, so it is an alternative to the existing filament method. It is highly anticipated as an alternative to X-ray tubes. However, when a high voltage of several kV to several tens of kV is applied to the field emission X-ray tube, there is a problem that the electron emission characteristics deteriorate with the lapse of the lighting time. Therefore, in applications (for example, for static elimination) that require at least a lifetime of several thousand hours or more, devices using field emission X-ray tubes have not actually been put into practical use.

关于这方面,作为确保场致发射型的X射线产生装置的长寿命的技术,提出了将发射极和栅极电极间用具有既定电阻的布线短路的技术(专利文献1)。In this regard, as a technique for securing a long life of a field emission type X-ray generator, a technique of short-circuiting an emitter electrode and a gate electrode with a wiring having a predetermined resistance has been proposed (Patent Document 1).

专利文献1:日本特开2008-53241号公报Patent Document 1: Japanese Unexamined Patent Publication No. 2008-53241

发明内容 Contents of the invention

然而,在专利文献1记载的技术,是以防止静电带电为起因的电位产生导致的放电破坏为目的,在后述那样构成为利用高压电缆连结电源和场致发射型X射线管的装置的情况下,在高压电缆产生的过电流、特别是在开始点亮时容易产生的突发的异常电流的对策并不充分。However, the technology described in Patent Document 1 aims at preventing discharge breakdown due to potential generation due to electrostatic charging, and is configured as a device that connects a power supply and a field emission X-ray tube with a high-voltage cable as described later. Under the circumstances, the countermeasures against the overcurrent generated in the high-voltage cable, especially the sudden abnormal current that tends to occur at the start of lighting are not sufficient.

本发明鉴于该情况而作出,其目的在于,提供长寿命的场致发射型X射线产生装置,以谋求解决上述问题。The present invention has been made in view of this situation, and an object of the present invention is to provide a long-life field emission type X-ray generator in order to solve the above-mentioned problems.

发明人深入研究时了解到:在向X射线管施加数kV~数十kV的高压电压的情况下,电子发射特性变差的较大的原因是,由场致发射型X射线管特有的电子发射源的电流变动引发的过电流的产生。The inventors have made in-depth studies and found that when a high voltage voltage of several kV to several tens of kV is applied to the X-ray tube, the major reason for the deterioration of the electron emission characteristics is that the electron emission characteristic of the field emission type X-ray tube The generation of overcurrent caused by the current fluctuation of the emission source.

基于附图说明该情况时,如图2所示,在例如构成为除静电用的装置的情况下,对于场致发射型X射线管101,构成为:经由高压电缆102从直流电源103对于场致发射型X射线管101内的电子发射元件施加电压。在该高压电缆102存在着以电缆长度为来由而寄生的所谓的寄生电感L和电容C。另外,通常考虑在高压电缆102中的直流电源103附近的部位,设有用于防止过电流的过电流防止电阻104。When this situation is described based on the drawings, as shown in FIG. 2 , in the case of a device for eliminating static electricity, for example, the field emission type X-ray tube 101 is configured to be connected to the field from a DC power supply 103 via a high-voltage cable 102. A voltage is applied to the electron emission elements in the emission type X-ray tube 101 . The high-voltage cable 102 has so-called parasitic inductance L and capacitance C that are parasitic due to the length of the cable. In addition, it is generally considered that an overcurrent prevention resistor 104 for preventing overcurrent is provided at a location near the DC power supply 103 in the high voltage cable 102 .

在该状态下点亮场致发射型X射线管101时,了解到:场致发射型X射线管101的电子发射量的变动比灯丝方式的X射线管大,以该变动为起因,所述的寄生电感L和电容C引起在高压电缆102比如二次产生高电压。该二次产生的电压,不经由过电流防止电阻104,其结果是,图2所示的装置结构最终与图3所示的电路等效。因此,利用过电流防止电阻104的过电流防止功能不工作,电子源的电子发射量进一步增大,引起异常放电导致的发射极(电子发射元件)的变差。When the field emission type X-ray tube 101 is turned on in this state, it is known that the fluctuation of the electron emission amount of the field emission type X-ray tube 101 is larger than that of the filament type X-ray tube, and the above-mentioned The parasitic inductance L and capacitance C of L cause a high voltage to be generated in the high voltage cable 102 such as secondary. This secondary generated voltage does not pass through the overcurrent prevention resistor 104. As a result, the device configuration shown in FIG. 2 is finally equivalent to the circuit shown in FIG. 3 . Therefore, the overcurrent prevention function by the overcurrent prevention resistor 104 does not work, the electron emission amount of the electron source further increases, and the emitter (electron emission element) deteriorates due to abnormal discharge.

该变差使电子发射性能依次变差,所以场致发射型X射线管101的寿命变短。再进一步,还了解到由于所述的寄生电感L和电容C,特别在开始点亮时极短时间内在高压电缆102产生高电压。按照发明人的见解,存在着最大施加场致发射型X射线管101的额定的110%的电压的可能性。This deterioration sequentially deteriorates the electron emission performance, so the life of the field emission X-ray tube 101 is shortened. Further, it is also known that a high voltage is generated in the high voltage cable 102 in a very short time especially at the start of lighting due to the aforementioned parasitic inductance L and capacitance C. According to the knowledge of the inventors, there is a possibility of applying a maximum voltage of 110% of the rating of the field emission type X-ray tube 101 .

因此鉴于这样的问题,本发明的场致发射型X射线产生装置的特征在于,具备:X射线管,具有发射电子的电子发射元件、利用从所述电子发射元件发射的电子的照射而产生X射线的对阴极、以及将在所述对阴极产生的X射线向外部发射的窗部;以及电源部,经由高压电缆对于该X射线管施加电压,在所述电源部附近设有第1电流控制电阻,该第1电流控制电阻限制从该电源部流过所述高压电缆的电流,在所述电子发射元件附近设有第2电流控制电阻,该第2电流控制电阻限制从所述高压电缆流入电子发射元件的电流,所述第2电流控制电阻的电阻值,比所述电子发射元件固有的电阻值和所述电子发射元件-所述对阴极间的电阻值的总计电阻值小。Therefore, in view of such problems, the field emission type X-ray generating device of the present invention is characterized in that it comprises: an X-ray tube having an electron emission element emitting electrons, and generating X-rays by irradiation of electrons emitted from the electron emission element. X-ray counter cathode, and a window portion that emits X-rays generated at the counter cathode to the outside; and a power supply unit that applies voltage to the X-ray tube through a high-voltage cable, and a first current control is provided near the power supply unit. resistor, the first current control resistor limits the current flowing from the power supply unit through the high-voltage cable, and a second current control resistor is provided near the electron emission element, and the second current control resistor limits the current flowing from the high-voltage cable The current of the electron emission element, the resistance value of the second current control resistor, is smaller than the total resistance value of the resistance value specific to the electron emission element and the resistance value between the electron emission element and the pair of cathodes.

依据本发明,通过在所述的电源附近设有的过电流防止用的第1电流控制电阻,此外在电子发射元件附近设有限制从所述高压电缆流入电子发射元件的电流的第2电流控制电阻,所以即使如上述那样,由寄生电感和电容导致在极短时间内高压电缆上产生高电压,也能利用该第2电流控制电阻抑制来自电子发射元件的电子发射量,从而谋求该发射元件的保护、实现长寿命。According to the present invention, the first current control resistor for overcurrent prevention provided near the power supply, and the second current control resistor for limiting the current flowing from the high-voltage cable into the electron emission element is provided near the electron emission element. resistance, so even if a high voltage is generated on the high-voltage cable in a very short period of time due to parasitic inductance and capacitance as described above, the second current control resistor can be used to suppress the amount of electron emission from the electron emission element, thereby achieving protection and achieve long life.

优选当向所述X射线管施加的电压的绝对值设为Vo时,第2电流控制电阻的电阻值R[Ω]为R=0.1×Vo~1000×Vo。Preferably, when the absolute value of the voltage applied to the X-ray tube is Vo, the resistance value R [Ω] of the second current control resistor is R=0.1×Vo˜1000×Vo.

另外,优选所述第2电流控制电阻,设在所述电子发射元件和高压电缆间,且在从所述电子发射元件起2m以内;而且在所述第2电流控制电阻和所述电子发射元件之间的高压电缆寄生的电感为2μH以下、且电容为200pF以下。In addition, it is preferable that the second current control resistor is arranged between the electron emission element and the high-voltage cable, and within 2 m from the electron emission element; and between the second current control resistor and the electron emission element The parasitic inductance of the high-voltage cable between them is 2 μH or less, and the capacitance is 200 pF or less.

再进一步,优选在本发明使用的所述电子发射元件是以石墨(graphite)为基体材料的冷阴极。Still further, it is preferable that the electron emission element used in the present invention is a cold cathode with graphite as the base material.

依据本发明,能够获得不使用特殊的电子发射元件、长寿命的场致发射型X射线产生装置。According to the present invention, it is possible to obtain a long-life field emission type X-ray generator without using a special electron emission element.

附图说明 Description of drawings

图1是示意性示出实施方式的场致发射型X射线产生装置的结构的说明图。FIG. 1 is an explanatory diagram schematically showing the structure of a field emission type X-ray generator according to an embodiment.

图2是示意性示出用现有技术构成的场致发射型X射线产生装置的结构的说明图。Fig. 2 is an explanatory diagram schematically showing the structure of a field emission type X-ray generator constructed in the prior art.

图3是示出图2的场致发射型X射线产生装置在使用时的等效电路的说明图。FIG. 3 is an explanatory diagram showing an equivalent circuit of the field emission X-ray generator of FIG. 2 in use.

附图标记说明Explanation of reference signs

1场致发射型X射线产生装置;10场致发射型X射线管;11壳体;12冷阴极;13对阴极;14窗;21直流电源;22高压电缆;23控制装置;24监视器;31第1电流控制电阻;41第2电流控制电阻。1 field emission type X-ray generating device; 10 field emission type X-ray tube; 11 housing; 12 cold cathode; 13 pairs of cathodes; 14 window; 21 DC power supply; 22 high-voltage cable; 31 The first current control resistor; 41 The second current control resistor.

具体实施方式 Detailed ways

以下,针对本发明的实施方式进行说明时,图1示意性示出实施方式的场致发射型X射线产生装置1的整体结构,场致发射型X射线管10具有:作为真空容器的壳体(case或housing)11,作为电子发射元件的冷阴极(cold cathode)12,对阴极13以及使在壳体11内产生的X射线向外部发射的窗14。Below, when describing the embodiment of the present invention, Fig. 1 schematically shows the overall structure of the field emission type X-ray generator 1 of the embodiment, and the field emission type X-ray tube 10 has: a housing as a vacuum container (case or housing) 11, a cold cathode (cold cathode) 12 as an electron emission element, a cathode 13 and a window 14 for emitting X-rays generated in the housing 11 to the outside.

壳体11由内部能够维持气密的绝缘性的材质构成。例如,由玻璃材料和绝缘材料构成。在壳体11内部,对置有冷阴极12和对阴极13。The housing 11 is made of an insulating material capable of maintaining an airtight interior. For example, made of glass material and insulating material. Inside the casing 11, a cold cathode 12 and a counter cathode 13 are opposed to each other.

作为电子发射元件的冷阴极12,可由导电性的薄板构成,但也可由石墨构成。在本实施方式中,使用以石墨为基体材料的电子材料(石墨纳米柱:graphite-nano-spines)。另外,也能够使用以碳为主材料的原料,例如碳纳米管(carbon-nano-tube)。The cold cathode 12 as an electron emission element may be made of a conductive thin plate, but may also be made of graphite. In this embodiment, an electronic material (graphite-nano-spines) using graphite as a base material is used. In addition, a raw material mainly composed of carbon, such as carbon-nano-tube, can also be used.

对阴极13经由窗14接地,对阴极13及窗14为接地电位。对阴极13的材质由例如钨(tungsten)、铜等导电性良好的金属材料构成。窗14使用具有将在对阴极13产生的X射线向外部发射的功能的材料,例如由X射线的透射性优异的铍(beryllium)构成。The counter cathode 13 is grounded through the window 14, and the counter cathode 13 and the window 14 are at ground potential. The material of the counter cathode 13 is, for example, a metal material having good conductivity such as tungsten and copper. The window 14 is made of a material having a function of emitting X-rays generated at the cathode 13 to the outside, for example, beryllium having excellent X-ray transmittance.

冷阴极12利用高压电缆22与直流电源21电连接。直流电源21正极侧接地,且能对于冷阴极12施加高压的负电压,例如-9kV~-l6kV。The cold cathode 12 is electrically connected to a DC power source 21 by a high voltage cable 22 . The positive side of the DC power supply 21 is grounded, and can apply a high-voltage negative voltage to the cold cathode 12, such as -9kV˜-16kV.

利用控制装置23控制直流电源21的电压、电流。相关控制是利用这样的反馈控制来进行,即基于流入高压电缆22的电流或者来自检测向场致发射型X射线管10施加的电压值的监视器24的检测信号,将该电压、电流控制为一定值。The voltage and current of the DC power supply 21 are controlled by the control device 23 . The relevant control is performed by feedback control in which the voltage and current are controlled to be A certain value.

而且,在高压电缆22中的直流电源21附近,相对于高压电缆22串联地设有第1电流控制电阻31。该第1电流控制电阻31的电阻值,在本实施方式中例如为100kΩ。Further, in the vicinity of the DC power source 21 in the high voltage cable 22 , a first current control resistor 31 is provided in series with the high voltage cable 22 . The resistance value of the first current control resistor 31 is, for example, 100 kΩ in this embodiment.

另外,在高压电缆22中的直流电源21附近,相对于高压电缆22串联地设有第2电流控制电阻41。在将向场致发射型X射线管10施加的电压的绝对值设为Vo[V]时,该第2电流控制电阻41的电阻值为0.1×Vo~1000×Vo[Ω]。In addition, a second current control resistor 41 is provided in series with the high voltage cable 22 in the vicinity of the DC power supply 21 in the high voltage cable 22 . When the absolute value of the voltage applied to the field emission X-ray tube 10 is Vo [V], the resistance value of the second current control resistor 41 is 0.1×Vo to 1000×Vo [Ω].

依据发明人的见解,为了高可靠性地防止上述的过电流,将第2电流控制电阻41的电阻值为0.1Ω以上,优选为10Ω以上即可,设得比该值越高,越提高异常放电防止功能。即如上所述,在伴随着在场致发射型X射线管10的电流变动而产生以寄生电感为起因的电压的情况下,第2电流控制电阻41的电阻值越高,越多的电压附加到第2电流控制电阻41,相应地对场致发射型X射线管10的负过电压变小,产生过电流的风险变小。According to the inventor's knowledge, in order to prevent the above-mentioned overcurrent with high reliability, the resistance value of the second current control resistor 41 should be 0.1Ω or more, preferably 10Ω or more. The higher the value, the more abnormal Discharge prevention function. That is, as described above, in the case where a voltage caused by parasitic inductance is generated along with the current fluctuation in the field emission X-ray tube 10, the higher the resistance value of the second current control resistor 41, the more voltage is applied to the field emission X-ray tube 10. Accordingly, the negative overvoltage of the second current control resistor 41 to the field emission X-ray tube 10 is reduced, and the risk of overcurrent generation is reduced.

另一方面,串联连接第2电流控制电阻34,当场致发射型X射线管10稳定点亮时,例如用500μA点亮时,在第2电流控制电阻41,施加该第2电流控制电阻41的电阻值×0.0005A的电压。于是,通过在例如第2电流控制电阻41的电阻值为100kΩ的情况下施加50v的电压,其结果是,在第2电流控制电阻41消耗50[v]×0.0005[A]=0.025[W]的功率。On the other hand, the second current control resistor 34 is connected in series. When the field emission type X-ray tube 10 is turned on stably, for example, when it is turned on with 500 μA, the current of the second current control resistor 41 is applied to the second current control resistor 41. Resistance value × voltage of 0.0005A. Then, by applying a voltage of 50v when, for example, the resistance value of the second current control resistor 41 is 100kΩ, as a result, the second current control resistor 41 consumes 50[v]×0.0005[A]=0.025[W] power.

这样0.025W左右的水平并无问题,但在第2电流控制电阻41消耗的功率为数W以上时,通过使用场致发射型X射线管10而用比现有的灯丝型X射线管少的电力产生既定的X射线这一场致发射型X射线管的优势减少,没有优越性。There is no problem with such a level of about 0.025W, but when the power consumed by the second current control resistor 41 is several W or more, by using the field emission type X-ray tube 10, less power is used than the conventional filament type X-ray tube. The advantage of the field emission type X-ray tube that produces the given X-rays is reduced and there is no superiority.

因此,如上所述,将第2电流控制电阻41的电阻值的上限,设为1000×Vo[Ω]。此外,按照发明人的见解,将向场致发射型X射线管10施加的电压的绝对值设为Vo[V]时,更合适且实用的范围为数Vo~数百Vo[Ω]。Therefore, as described above, the upper limit of the resistance value of the second current control resistor 41 is set to 1000×Vo [Ω]. In addition, according to the knowledge of the inventors, when the absolute value of the voltage applied to the field emission X-ray tube 10 is Vo [V], a more suitable and practical range is several Vo to hundreds of Vo [Ω].

在该例子中,第2电流控制电阻41的电阻值设为105Ω。这比冷阴极12的电阻(发射极电阻:构成冷阴极12的元件固有的电阻值和该元件-对阴极13间的电阻值的总计电阻值)小。即在本实施方式中,当冷阴极12的电阻为2×107Ω(从施加10kV测定0.5mA的情况算出)时,优选第2电流控制电阻41的电阻值的范围为0.1×104~1000×104Ω,即103~107Ω。这比冷阴极12的电阻(发射极电阻)小。In this example, the resistance value of the second current control resistor 41 is set to 10 5 Ω. This is smaller than the resistance of the cold cathode 12 (emitter resistance: the total resistance value of the resistance value of the element constituting the cold cathode 12 and the resistance value between the element and the pair of cathodes 13 ). That is, in this embodiment, when the resistance of the cold cathode 12 is 2×10 7 Ω (calculated from the case of measuring 0.5 mA with 10 kV applied), it is preferable that the resistance value of the second current control resistor 41 is in the range of 0.1×10 4 to 1000×10 4 Ω, that is, 10 3 to 10 7 Ω. This is smaller than the resistance (emitter resistance) of the cold cathode 12 .

另外,关于在场致发射型X射线管10附近串联地设置第2电流控制电阻41的位置,优选从冷阴极12起2m以内。关于该情况,从冷阴极12离得越远,寄生在高压电缆22的电感和电容变得越大,相应地以这些为原因的过电流导致的风险增大。另一方面,发明人用实验进行确认时,能确认到只要从冷阴极12起在2m以内,就能取得本发明的期望的效果。另外,如果考虑到所述风险,也可将第2电流控制电阻41与冷阴极12直接连接,但这样做时需要改变冷阴极12自身的构造。因此,在实际使用上,优选从冷阴极12起1~10cm以内。由此,虽然也取决于高压电缆22的材质,但能够将一般的在这种用途使用的用硅酮橡胶(silicone rubber)等绝缘的铜线的、数十kV用的高压电缆寄生的电感抑制为2μH以下,且电容抑制为200pF以下。In addition, the position where the second current control resistor 41 is arranged in series near the field emission type X-ray tube 10 is preferably within 2 m from the cold cathode 12 . In this case, the farther away from the cold cathode 12, the larger the inductance and capacitance parasitic in the high voltage cable 22, and accordingly the risk of overcurrent caused by these increases. On the other hand, the inventors confirmed by experiments that the desired effect of the present invention can be obtained as long as the distance from the cold cathode 12 is within 2 m. In addition, if the risk is taken into consideration, the second current control resistor 41 may be directly connected to the cold cathode 12, but this requires changing the structure of the cold cathode 12 itself. Therefore, in actual use, it is preferably within 1 to 10 cm from the cold cathode 12 . Therefore, although it also depends on the material of the high-voltage cable 22, it is possible to suppress the parasitic inductance of the high-voltage cable for several tens of kV, which is a copper wire insulated with silicone rubber or the like generally used in this application. It is less than 2μH, and the capacitance suppression is less than 200pF.

本实施方式通过具有以上的结构,从直流电源21经由高压电缆22,对于作为场致发射型X射线管10的场致发射元件的冷阴极12施加绝对值为数十kV的电压时,如图1所示,即使寄生在高压电缆22的电感L、电容C为起因的电动势导致过电流的产生,也能够利用第2电流控制电阻41,防止该过电流按照原样流入冷阴极12。因此,能够将冷阴极12、即场致发射型X射线管10的寿命比以往大大延长,例如能够确保除静电用途所需要的数千小时以上的寿命。In this embodiment, with the above structure, when a voltage with an absolute value of several tens of kV is applied from the DC power supply 21 through the high-voltage cable 22 to the cold cathode 12 serving as the field emission element of the field emission X-ray tube 10, as shown in FIG. 1, even if the electromotive force caused by the inductance L and capacitance C parasitic in the high voltage cable 22 causes an overcurrent, the second current control resistor 41 can prevent the overcurrent from flowing into the cold cathode 12 as it is. Therefore, the lifetime of the cold cathode 12, that is, the field emission type X-ray tube 10 can be greatly extended compared to conventional ones, for example, a lifetime of several thousand hours or more required for static electricity removal can be ensured.

另外,在开始点亮时,通过防止电流的波动(电流的变动)和所述的寄生电感L及电容C的相互作用引发的电动势导致的电压,在开始点亮时,也能够防止施加在极短时间内流过的例如脉冲(pulse)电压。In addition, by preventing current fluctuations (current fluctuations) and the voltage caused by the electromotive force caused by the interaction of the above-mentioned parasitic inductance L and capacitance C at the start of lighting, it is also possible to prevent the voltage from being applied to the poles at the start of lighting. For example, a pulse (pulse) voltage that flows for a short time.

发明人使用图1所示的场致发射型X射线产生装置1进行实验时,获得如下结果。即,在向场致发射型X射线管10施加的电压为-14kV、第2电流控制电阻41的电阻值为100kΩ、高压电缆22的长度为15m的情况下,测定点亮初期和经过1000小时后的流入冷阴极12的电流时,全都稳定为500μA。When the inventors conducted an experiment using the field emission type X-ray generator 1 shown in FIG. 1 , the following results were obtained. That is, under the condition that the voltage applied to the field emission type X-ray tube 10 is -14kV, the resistance value of the second current control resistor 41 is 100kΩ, and the length of the high voltage cable 22 is 15m, the initial stage of lighting and the elapsed time of 1000 hours are measured. The subsequent currents flowing into the cold cathode 12 were all stabilized at 500 μA.

相对于此,在不具有第2电流控制电阻41的图2所示的装置中,以相同条件进行调查时,在点亮初期流入冷阴极12的电流为500μA,但经过24小时后,已经下降到200μA,能够确认在24小时后冷阴极12已经不再能发挥期望的功能。On the other hand, in the device shown in FIG. 2 without the second current control resistor 41, when the investigation was carried out under the same conditions, the current flowing into the cold cathode 12 at the initial stage of lighting was 500 μA, but after 24 hours, it had already decreased. To 200 μA, it can be confirmed that the cold cathode 12 no longer functions as expected after 24 hours.

此外,在本实施方式中,使用以石墨为基体材料的电子材料(石墨纳米柱)作为电子发射元件的冷阴极12,但即使不使用那样的利用石墨的电子材料,也能够实现本发明的期望的效果,即比灯丝方式能效好,且长寿命的场致发射型X射线产生装置。In addition, in the present embodiment, the electronic material (graphite nanocolumn) using graphite as the base material is used as the cold cathode 12 of the electron emission element, but even without using such an electronic material using graphite, the desired effect of the present invention can be achieved. The effect, that is, a field emission type X-ray generator with better energy efficiency than the filament method and a long life.

此外,所述实施方式是构成为主要用于除静电的例子,但本发明不限于此,对于与现有的这种X射线装置相同的用途也能适用。In addition, the above-mentioned embodiment is an example configured mainly for static electricity removal, but the present invention is not limited thereto, and can be applied to the same application as the conventional X-ray apparatus of this kind.

产业上的可利用性Industrial availability

本发明对于长时间连续使用的场致发射型X射线产生装置特别有用。The present invention is particularly useful for field emission type X-ray generators used continuously for a long time.

Claims (4)

1. field emission type X ray generation device is characterized in that possessing:
X-ray tube, have emitting electrons electronic emission element, utilize the target that produces X ray from the irradiation of said electronic emission element electrons emitted and the X ray that will produce at said target to the window portion of external emission; And
Power supply unit applies voltage via high-tension cable for this X-ray tube,
Near said power supply unit, be provided with the 1st current control resistor, the 1st current control resistor limits the electric current that flows through said high-tension cable from this power supply unit,
Near said electronic emission element, be provided with the 2nd current control resistor, the 2nd current control resistor limits the electric current that flows into electronic emission element from said high-tension cable,
The resistance value of said the 2nd current control resistor is littler than the total resistance value of intrinsic resistance value of said electronic emission element and the resistance value between said electronic emission element-said target.
2. field emission type X ray generation device as claimed in claim 1; It is characterized in that; When the absolute value of the voltage that will apply to said X-ray tube is made as Vo; Said the 2nd current control resistor R is R=0.1 * Vo~1000 * Vo, and wherein the unit of voltage Vo is V, and the unit of said the 2nd current control resistor R is Ω.
3. field emission type X ray generation device as claimed in claim 2 is characterized in that said the 2nd current control resistor is located between said electronic emission element and high-tension cable, and in said electronic emission element 2m,
The inductance parasitic at the high-tension cable between said the 2nd current control resistor and the said electronic emission element is below the 2 μ H, and electric capacity is below the 200pF.
4. like each described field emission type X ray generation device of claim 1~3, it is characterized in that said electronic emission element is to be the cold cathode element of basis material with graphite.
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Application publication date: 20120912