CN102665370A - Field emission x-ray generating apparatus - Google Patents
Field emission x-ray generating apparatus Download PDFInfo
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
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- H01J1/304—Field-emissive cathodes
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- H—ELECTRICITY
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Abstract
Description
技术领域 technical field
本发明涉及场致发射型X射线产生装置。The present invention relates to a field emission type X-ray generating device.
背景技术 Background technique
近年来,例如在平板显示器的制造工序中,使用了照射软X射线(微弱X射线:a soft X-ray)而生成离子,并利用其除静电(removestatic electricity)的技术。作为产生软X射线的装置,到目前为止一直使用灯丝(filament)方式的X射线产生装置,但是在该灯丝方式的X射线产生装置中,存在着消耗功率大这一问题。In recent years, for example, in the manufacturing process of flat panel displays, a technique of irradiating soft X-rays (weak X-rays: a soft X-ray) to generate ions and using them to remove static electricity has been used. As a device for generating soft X-rays, a filament-type X-ray generator has been used until now, but the filament-type X-ray generator has a problem of high power consumption.
因此,最近使用了场致发射型电子源的X射线管(场致发射型X射线管),由于能在常温发射电子所以能够将消耗功率抑制得较低,所以其作为现有的灯丝方式的X射线管的替代方式而备受期待。然而,当向场致发射型X射线管施加数kV~数十kV的高压电压时,存在着随着点亮时间的经过电子发射特性变差这一问题。因此,在最低限度要求数千小时以上的寿命的用途(例如除静电用)等中,实际情况是使用了场致发射型X射线管的装置未被实用化。Therefore, recently, an X-ray tube (field emission type X-ray tube) using a field emission type electron source can suppress power consumption low because it can emit electrons at room temperature, so it is an alternative to the existing filament method. It is highly anticipated as an alternative to X-ray tubes. However, when a high voltage of several kV to several tens of kV is applied to the field emission X-ray tube, there is a problem that the electron emission characteristics deteriorate with the lapse of the lighting time. Therefore, in applications (for example, for static elimination) that require at least a lifetime of several thousand hours or more, devices using field emission X-ray tubes have not actually been put into practical use.
关于这方面,作为确保场致发射型的X射线产生装置的长寿命的技术,提出了将发射极和栅极电极间用具有既定电阻的布线短路的技术(专利文献1)。In this regard, as a technique for securing a long life of a field emission type X-ray generator, a technique of short-circuiting an emitter electrode and a gate electrode with a wiring having a predetermined resistance has been proposed (Patent Document 1).
专利文献1:日本特开2008-53241号公报Patent Document 1: Japanese Unexamined Patent Publication No. 2008-53241
发明内容 Contents of the invention
然而,在专利文献1记载的技术,是以防止静电带电为起因的电位产生导致的放电破坏为目的,在后述那样构成为利用高压电缆连结电源和场致发射型X射线管的装置的情况下,在高压电缆产生的过电流、特别是在开始点亮时容易产生的突发的异常电流的对策并不充分。However, the technology described in
本发明鉴于该情况而作出,其目的在于,提供长寿命的场致发射型X射线产生装置,以谋求解决上述问题。The present invention has been made in view of this situation, and an object of the present invention is to provide a long-life field emission type X-ray generator in order to solve the above-mentioned problems.
发明人深入研究时了解到:在向X射线管施加数kV~数十kV的高压电压的情况下,电子发射特性变差的较大的原因是,由场致发射型X射线管特有的电子发射源的电流变动引发的过电流的产生。The inventors have made in-depth studies and found that when a high voltage voltage of several kV to several tens of kV is applied to the X-ray tube, the major reason for the deterioration of the electron emission characteristics is that the electron emission characteristic of the field emission type X-ray tube The generation of overcurrent caused by the current fluctuation of the emission source.
基于附图说明该情况时,如图2所示,在例如构成为除静电用的装置的情况下,对于场致发射型X射线管101,构成为:经由高压电缆102从直流电源103对于场致发射型X射线管101内的电子发射元件施加电压。在该高压电缆102存在着以电缆长度为来由而寄生的所谓的寄生电感L和电容C。另外,通常考虑在高压电缆102中的直流电源103附近的部位,设有用于防止过电流的过电流防止电阻104。When this situation is described based on the drawings, as shown in FIG. 2 , in the case of a device for eliminating static electricity, for example, the field emission
在该状态下点亮场致发射型X射线管101时,了解到:场致发射型X射线管101的电子发射量的变动比灯丝方式的X射线管大,以该变动为起因,所述的寄生电感L和电容C引起在高压电缆102比如二次产生高电压。该二次产生的电压,不经由过电流防止电阻104,其结果是,图2所示的装置结构最终与图3所示的电路等效。因此,利用过电流防止电阻104的过电流防止功能不工作,电子源的电子发射量进一步增大,引起异常放电导致的发射极(电子发射元件)的变差。When the field emission
该变差使电子发射性能依次变差,所以场致发射型X射线管101的寿命变短。再进一步,还了解到由于所述的寄生电感L和电容C,特别在开始点亮时极短时间内在高压电缆102产生高电压。按照发明人的见解,存在着最大施加场致发射型X射线管101的额定的110%的电压的可能性。This deterioration sequentially deteriorates the electron emission performance, so the life of the field
因此鉴于这样的问题,本发明的场致发射型X射线产生装置的特征在于,具备:X射线管,具有发射电子的电子发射元件、利用从所述电子发射元件发射的电子的照射而产生X射线的对阴极、以及将在所述对阴极产生的X射线向外部发射的窗部;以及电源部,经由高压电缆对于该X射线管施加电压,在所述电源部附近设有第1电流控制电阻,该第1电流控制电阻限制从该电源部流过所述高压电缆的电流,在所述电子发射元件附近设有第2电流控制电阻,该第2电流控制电阻限制从所述高压电缆流入电子发射元件的电流,所述第2电流控制电阻的电阻值,比所述电子发射元件固有的电阻值和所述电子发射元件-所述对阴极间的电阻值的总计电阻值小。Therefore, in view of such problems, the field emission type X-ray generating device of the present invention is characterized in that it comprises: an X-ray tube having an electron emission element emitting electrons, and generating X-rays by irradiation of electrons emitted from the electron emission element. X-ray counter cathode, and a window portion that emits X-rays generated at the counter cathode to the outside; and a power supply unit that applies voltage to the X-ray tube through a high-voltage cable, and a first current control is provided near the power supply unit. resistor, the first current control resistor limits the current flowing from the power supply unit through the high-voltage cable, and a second current control resistor is provided near the electron emission element, and the second current control resistor limits the current flowing from the high-voltage cable The current of the electron emission element, the resistance value of the second current control resistor, is smaller than the total resistance value of the resistance value specific to the electron emission element and the resistance value between the electron emission element and the pair of cathodes.
依据本发明,通过在所述的电源附近设有的过电流防止用的第1电流控制电阻,此外在电子发射元件附近设有限制从所述高压电缆流入电子发射元件的电流的第2电流控制电阻,所以即使如上述那样,由寄生电感和电容导致在极短时间内高压电缆上产生高电压,也能利用该第2电流控制电阻抑制来自电子发射元件的电子发射量,从而谋求该发射元件的保护、实现长寿命。According to the present invention, the first current control resistor for overcurrent prevention provided near the power supply, and the second current control resistor for limiting the current flowing from the high-voltage cable into the electron emission element is provided near the electron emission element. resistance, so even if a high voltage is generated on the high-voltage cable in a very short period of time due to parasitic inductance and capacitance as described above, the second current control resistor can be used to suppress the amount of electron emission from the electron emission element, thereby achieving protection and achieve long life.
优选当向所述X射线管施加的电压的绝对值设为Vo时,第2电流控制电阻的电阻值R[Ω]为R=0.1×Vo~1000×Vo。Preferably, when the absolute value of the voltage applied to the X-ray tube is Vo, the resistance value R [Ω] of the second current control resistor is R=0.1×Vo˜1000×Vo.
另外,优选所述第2电流控制电阻,设在所述电子发射元件和高压电缆间,且在从所述电子发射元件起2m以内;而且在所述第2电流控制电阻和所述电子发射元件之间的高压电缆寄生的电感为2μH以下、且电容为200pF以下。In addition, it is preferable that the second current control resistor is arranged between the electron emission element and the high-voltage cable, and within 2 m from the electron emission element; and between the second current control resistor and the electron emission element The parasitic inductance of the high-voltage cable between them is 2 μH or less, and the capacitance is 200 pF or less.
再进一步,优选在本发明使用的所述电子发射元件是以石墨(graphite)为基体材料的冷阴极。Still further, it is preferable that the electron emission element used in the present invention is a cold cathode with graphite as the base material.
依据本发明,能够获得不使用特殊的电子发射元件、长寿命的场致发射型X射线产生装置。According to the present invention, it is possible to obtain a long-life field emission type X-ray generator without using a special electron emission element.
附图说明 Description of drawings
图1是示意性示出实施方式的场致发射型X射线产生装置的结构的说明图。FIG. 1 is an explanatory diagram schematically showing the structure of a field emission type X-ray generator according to an embodiment.
图2是示意性示出用现有技术构成的场致发射型X射线产生装置的结构的说明图。Fig. 2 is an explanatory diagram schematically showing the structure of a field emission type X-ray generator constructed in the prior art.
图3是示出图2的场致发射型X射线产生装置在使用时的等效电路的说明图。FIG. 3 is an explanatory diagram showing an equivalent circuit of the field emission X-ray generator of FIG. 2 in use.
附图标记说明Explanation of reference signs
1场致发射型X射线产生装置;10场致发射型X射线管;11壳体;12冷阴极;13对阴极;14窗;21直流电源;22高压电缆;23控制装置;24监视器;31第1电流控制电阻;41第2电流控制电阻。1 field emission type X-ray generating device; 10 field emission type X-ray tube; 11 housing; 12 cold cathode; 13 pairs of cathodes; 14 window; 21 DC power supply; 22 high-voltage cable; 31 The first current control resistor; 41 The second current control resistor.
具体实施方式 Detailed ways
以下,针对本发明的实施方式进行说明时,图1示意性示出实施方式的场致发射型X射线产生装置1的整体结构,场致发射型X射线管10具有:作为真空容器的壳体(case或housing)11,作为电子发射元件的冷阴极(cold cathode)12,对阴极13以及使在壳体11内产生的X射线向外部发射的窗14。Below, when describing the embodiment of the present invention, Fig. 1 schematically shows the overall structure of the field emission
壳体11由内部能够维持气密的绝缘性的材质构成。例如,由玻璃材料和绝缘材料构成。在壳体11内部,对置有冷阴极12和对阴极13。The housing 11 is made of an insulating material capable of maintaining an airtight interior. For example, made of glass material and insulating material. Inside the casing 11, a
作为电子发射元件的冷阴极12,可由导电性的薄板构成,但也可由石墨构成。在本实施方式中,使用以石墨为基体材料的电子材料(石墨纳米柱:graphite-nano-spines)。另外,也能够使用以碳为主材料的原料,例如碳纳米管(carbon-nano-tube)。The
对阴极13经由窗14接地,对阴极13及窗14为接地电位。对阴极13的材质由例如钨(tungsten)、铜等导电性良好的金属材料构成。窗14使用具有将在对阴极13产生的X射线向外部发射的功能的材料,例如由X射线的透射性优异的铍(beryllium)构成。The
冷阴极12利用高压电缆22与直流电源21电连接。直流电源21正极侧接地,且能对于冷阴极12施加高压的负电压,例如-9kV~-l6kV。The
利用控制装置23控制直流电源21的电压、电流。相关控制是利用这样的反馈控制来进行,即基于流入高压电缆22的电流或者来自检测向场致发射型X射线管10施加的电压值的监视器24的检测信号,将该电压、电流控制为一定值。The voltage and current of the
而且,在高压电缆22中的直流电源21附近,相对于高压电缆22串联地设有第1电流控制电阻31。该第1电流控制电阻31的电阻值,在本实施方式中例如为100kΩ。Further, in the vicinity of the
另外,在高压电缆22中的直流电源21附近,相对于高压电缆22串联地设有第2电流控制电阻41。在将向场致发射型X射线管10施加的电压的绝对值设为Vo[V]时,该第2电流控制电阻41的电阻值为0.1×Vo~1000×Vo[Ω]。In addition, a second
依据发明人的见解,为了高可靠性地防止上述的过电流,将第2电流控制电阻41的电阻值为0.1Ω以上,优选为10Ω以上即可,设得比该值越高,越提高异常放电防止功能。即如上所述,在伴随着在场致发射型X射线管10的电流变动而产生以寄生电感为起因的电压的情况下,第2电流控制电阻41的电阻值越高,越多的电压附加到第2电流控制电阻41,相应地对场致发射型X射线管10的负过电压变小,产生过电流的风险变小。According to the inventor's knowledge, in order to prevent the above-mentioned overcurrent with high reliability, the resistance value of the second
另一方面,串联连接第2电流控制电阻34,当场致发射型X射线管10稳定点亮时,例如用500μA点亮时,在第2电流控制电阻41,施加该第2电流控制电阻41的电阻值×0.0005A的电压。于是,通过在例如第2电流控制电阻41的电阻值为100kΩ的情况下施加50v的电压,其结果是,在第2电流控制电阻41消耗50[v]×0.0005[A]=0.025[W]的功率。On the other hand, the second current control resistor 34 is connected in series. When the field emission
这样0.025W左右的水平并无问题,但在第2电流控制电阻41消耗的功率为数W以上时,通过使用场致发射型X射线管10而用比现有的灯丝型X射线管少的电力产生既定的X射线这一场致发射型X射线管的优势减少,没有优越性。There is no problem with such a level of about 0.025W, but when the power consumed by the second
因此,如上所述,将第2电流控制电阻41的电阻值的上限,设为1000×Vo[Ω]。此外,按照发明人的见解,将向场致发射型X射线管10施加的电压的绝对值设为Vo[V]时,更合适且实用的范围为数Vo~数百Vo[Ω]。Therefore, as described above, the upper limit of the resistance value of the second
在该例子中,第2电流控制电阻41的电阻值设为105Ω。这比冷阴极12的电阻(发射极电阻:构成冷阴极12的元件固有的电阻值和该元件-对阴极13间的电阻值的总计电阻值)小。即在本实施方式中,当冷阴极12的电阻为2×107Ω(从施加10kV测定0.5mA的情况算出)时,优选第2电流控制电阻41的电阻值的范围为0.1×104~1000×104Ω,即103~107Ω。这比冷阴极12的电阻(发射极电阻)小。In this example, the resistance value of the second
另外,关于在场致发射型X射线管10附近串联地设置第2电流控制电阻41的位置,优选从冷阴极12起2m以内。关于该情况,从冷阴极12离得越远,寄生在高压电缆22的电感和电容变得越大,相应地以这些为原因的过电流导致的风险增大。另一方面,发明人用实验进行确认时,能确认到只要从冷阴极12起在2m以内,就能取得本发明的期望的效果。另外,如果考虑到所述风险,也可将第2电流控制电阻41与冷阴极12直接连接,但这样做时需要改变冷阴极12自身的构造。因此,在实际使用上,优选从冷阴极12起1~10cm以内。由此,虽然也取决于高压电缆22的材质,但能够将一般的在这种用途使用的用硅酮橡胶(silicone rubber)等绝缘的铜线的、数十kV用的高压电缆寄生的电感抑制为2μH以下,且电容抑制为200pF以下。In addition, the position where the second
本实施方式通过具有以上的结构,从直流电源21经由高压电缆22,对于作为场致发射型X射线管10的场致发射元件的冷阴极12施加绝对值为数十kV的电压时,如图1所示,即使寄生在高压电缆22的电感L、电容C为起因的电动势导致过电流的产生,也能够利用第2电流控制电阻41,防止该过电流按照原样流入冷阴极12。因此,能够将冷阴极12、即场致发射型X射线管10的寿命比以往大大延长,例如能够确保除静电用途所需要的数千小时以上的寿命。In this embodiment, with the above structure, when a voltage with an absolute value of several tens of kV is applied from the
另外,在开始点亮时,通过防止电流的波动(电流的变动)和所述的寄生电感L及电容C的相互作用引发的电动势导致的电压,在开始点亮时,也能够防止施加在极短时间内流过的例如脉冲(pulse)电压。In addition, by preventing current fluctuations (current fluctuations) and the voltage caused by the electromotive force caused by the interaction of the above-mentioned parasitic inductance L and capacitance C at the start of lighting, it is also possible to prevent the voltage from being applied to the poles at the start of lighting. For example, a pulse (pulse) voltage that flows for a short time.
发明人使用图1所示的场致发射型X射线产生装置1进行实验时,获得如下结果。即,在向场致发射型X射线管10施加的电压为-14kV、第2电流控制电阻41的电阻值为100kΩ、高压电缆22的长度为15m的情况下,测定点亮初期和经过1000小时后的流入冷阴极12的电流时,全都稳定为500μA。When the inventors conducted an experiment using the field emission
相对于此,在不具有第2电流控制电阻41的图2所示的装置中,以相同条件进行调查时,在点亮初期流入冷阴极12的电流为500μA,但经过24小时后,已经下降到200μA,能够确认在24小时后冷阴极12已经不再能发挥期望的功能。On the other hand, in the device shown in FIG. 2 without the second
此外,在本实施方式中,使用以石墨为基体材料的电子材料(石墨纳米柱)作为电子发射元件的冷阴极12,但即使不使用那样的利用石墨的电子材料,也能够实现本发明的期望的效果,即比灯丝方式能效好,且长寿命的场致发射型X射线产生装置。In addition, in the present embodiment, the electronic material (graphite nanocolumn) using graphite as the base material is used as the
此外,所述实施方式是构成为主要用于除静电的例子,但本发明不限于此,对于与现有的这种X射线装置相同的用途也能适用。In addition, the above-mentioned embodiment is an example configured mainly for static electricity removal, but the present invention is not limited thereto, and can be applied to the same application as the conventional X-ray apparatus of this kind.
产业上的可利用性Industrial availability
本发明对于长时间连续使用的场致发射型X射线产生装置特别有用。The present invention is particularly useful for field emission type X-ray generators used continuously for a long time.
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