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CN102637566B - Barium-tungsten cathode with high current density and preparation method thereof - Google Patents

Barium-tungsten cathode with high current density and preparation method thereof Download PDF

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Publication number
CN102637566B
CN102637566B CN201210090817.3A CN201210090817A CN102637566B CN 102637566 B CN102637566 B CN 102637566B CN 201210090817 A CN201210090817 A CN 201210090817A CN 102637566 B CN102637566 B CN 102637566B
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tungsten
powder
cathode
barium
current density
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CN102637566A (en
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吴华夏
邓清东
贺兆昌
宋田英
张丽
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Anhui East China Institute of Optoelectronic Technology
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Anhui Huadong Polytechnic Institute
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Abstract

The invention discloses a barium-tungsten cathode with high current density and a preparation method thereof, wherein the barium-tungsten cathode comprises a cathode molybdenum cylinder (3) and a double-layer substrate filled in the cathode molybdenum cylinder (3), the double-layer substrate comprises an upper layer and a lower layer, the upper layer is a spherical tungsten powder layer (1) formed by pressing spherical tungsten powder serving as a substrate material, and the particle size of the tungsten powder is 4 mu m; the lower layer is a tungsten-rhenium alloy layer (2) formed by pressing tungsten powder and rhenium powder which are mixed as a base material, and the tungsten powder and the rhenium powder are uniformly mixed according to the proportion of 20 percent to 80 percent. The barium-tungsten cathode with the special structure and the large current density adopts a double-layer substrate, the upper layer is formed by pressing tungsten powder with specific particles in a specific shape as a substrate material, and the lower layer is formed by pressing tungsten powder and rhenium powder which are mixed as the substrate material, so that the current density of 100A/cm2 can be stably provided, the requirements of high-power and high-frequency microwave devices on the cathode are met, and the strong guarantee is provided for the development of the microwave devices.

Description

Barium-tungsten dispense cathode of a kind of high current density and preparation method thereof
Technical field
The present invention relates to a kind of barium-tungsten dispense cathode, especially relate to barium-tungsten dispense cathode of a kind of high current density and preparation method thereof.
Background technology
Development along with the epoch, the progress of science, microwave device more and more strides forward towards high-power, high-frequency direction, this is a huge test to the negative electrode as microwave device electron source, especially enter after millimere-wave band, terahertz wave band, very large to the current density requirements of electron beam, need the stable current density that every square centimeter of dozens or even hundreds of ampere is provided of negative electrode energy.Traditional barium-tungsten dispense cathode is because the blind hole of negative electrode cavernous body is more, pore structure is inhomogeneous, the deposit of cathode active material is abundant not, barium content in cathode active material is low, and cathode active material reacts too fast with traditional pure tungsten cathode substrate, and a large amount of active materials have evaporated very soon, negative electrode not only emission current is less than normal, drawing under the state of large electric current, can't lasting stability work, be difficult to meet that microwave device is high-power, the needs of high-frequency development.
Summary of the invention
Technical problem to be solved by this invention is barium-tungsten dispense cathode providing for problems of the prior art a kind of high current density and preparation method thereof, its objective is and makes current density can reach 100A/cm 2, meet the needs that microwave device is high-power, high-frequency develops.
Technical scheme of the present invention is that the barium-tungsten dispense cathode of this kind of high current density comprises negative electrode molybdenum cylinder and is filled in the double base in negative electrode molybdenum cylinder, described double base comprises the upper and lower, upper strata is the tungsten powder globular tungsten powder layer that compacting forms as base material that adopts ball shape, and lower floor adopts tungsten powder to mix the tungsten-rhenium alloy layer that compacting forms as base material with rhenium powder.
The particle diameter of described upper strata globular tungsten powder is 2 μ m~10 μ m, is preferably 4 μ m.
Tungsten powder and rhenium powder in described tungsten-rhenium alloy layer mix according to the ratio of 10%~50%:90%~50%, and the proportion optimization of tungsten powder and rhenium powder is 20%:80%.
A kind of method for the preparation of above-mentioned barium-tungsten dispense cathode comprises:
1) get tungsten powder and rhenium powder arbitrary shape, that granularity is less than 50 μ m and in hydrogen, purify annealing, in 800 ℃~950 ℃ environment, be incubated 20min~30min;
2) tungsten powder and rhenium powder after purifying are mixed according to the ratio of 10%~50%:90%~50%, preferred proportion is 20%:80%, prepares tungsten-rhenium alloy powder;
3) get the globular tungsten powder of particle diameter 2 μ m~10 μ m, similar ball shape, in hydrogen, purify annealing, in 800 ℃~950 ℃ environment, be incubated 20min~30min, the preferable particle size 4 μ m of globular tungsten powder;
4) take appropriate globular tungsten powder, be filled in negative electrode molybdenum cylinder, and make powder plain;
5) take again appropriate W-Re mixed powder, be filled in step 4) after negative electrode molybdenum cylinder in, and make powder plain;
6) use 8~15T/cm 2pressure target suppress, the cell size of cathode substrate is controlled to 28%~40%, be preferably controlled at 33%~35%;
7) in hydrogen, the negative electrode after compacting is carried out to sintering, in 1400 ℃~1600 ℃ environment, be incubated 30~70min;
8) adopt 3.5BaCO 30.5CaCO 3the aluminate of 2Al floods the negative electrode after sintering in lower than the dry hydrogen of-60 ℃ at dew point, impregnation technology is in the time of 1250 ℃~1300 ℃, to be incubated 7min~12min, then within 2min, rise to 1740 ℃~1780 ℃, insulation 30s~70s, subsequently cooling;
9) remove the unnecessary cathode salt of cathode surface, and carry out machining according to figure paper size;
10) use nitrogen as medium, ion etching cleaning is carried out on target surface, makes cathode emission surface expose fresh perforate.
The barium-tungsten dispense cathode with this kind of high current density of above-mentioned special construction adopts double base, upper strata adopts the tungsten powder of the specific particle of given shape to suppress and form as base material, lower floor adopts tungsten powder to mix the compacting as base material with rhenium powder and forms, and 100A/cm can be stably provided 2current density, meet high-power, the anticathode demand of High power microwavs device, for the development of microwave device provides strong guarantee.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the invention will be further described:
Fig. 1 is the structural representation of barium-tungsten dispense cathode in the present invention.
In Fig. 1,1: globular tungsten powder layer; 2: tungsten-rhenium alloy layer; 3: negative electrode molybdenum cylinder.
Embodiment
Figure 1 shows that the structural representation of barium-tungsten dispense cathode in the present invention, the barium-tungsten dispense cathode of this kind of high current density comprises negative electrode molybdenum cylinder 3 and is filled in the double base in negative electrode molybdenum cylinder 3, double base comprises the upper and lower, upper strata is the tungsten powder globular tungsten powder layer 1 that compacting forms as base material that adopts ball shape, and lower floor adopts tungsten powder to mix the tungsten-rhenium alloy layer 2 that compacting forms as base material with rhenium powder.
The particle diameter of the globular tungsten powder of upper strata globular tungsten powder layer 1 is 2 μ m~10 μ m, is preferably 4 μ m; Tungsten powder and rhenium powder in lower floor's tungsten-rhenium alloy layer 2 mix according to the ratio of 10%~50%:90%~50%, and proportion optimization is 20%:80%.
A kind of method of the barium-tungsten dispense cathode for the preparation of high current density comprises:
1) get tungsten powder and rhenium powder arbitrary shape, that granularity is less than 50 μ m and in hydrogen, purify annealing, in 800 ℃~950 ℃ environment, be incubated 20min~30min;
2) tungsten powder and rhenium powder after purifying are mixed according to the ratio of 10%~50%:90%~50%, prepare tungsten-rhenium alloy powder; The proportion optimization of tungsten powder and rhenium powder is 20%:80%.
3) get the globular tungsten powder of particle diameter 2 μ m~10 μ m, similar ball shape, purify annealing in hydrogen, in 800 ℃~950 ℃ environment, be incubated 20min~30min, the particle diameter of globular tungsten powder is preferably 4 μ m;
4) take appropriate globular tungsten powder, be filled in negative electrode molybdenum cylinder 3, and make powder plain;
5) take again appropriate W-Re mixed powder, be filled in step 4) after negative electrode molybdenum cylinder 3 in, and make powder plain;
6) use the pressure target of 8~15T/cm2 to suppress, the cell size of cathode substrate is controlled to 28%~40%, be preferably controlled at 33%~35%;
7) in hydrogen, the negative electrode after compacting is carried out to sintering, in 1400 ℃~1600 ℃ environment, be incubated 30~70min;
8) adopt 3.5BaCO 30.5CaCO 3the aluminate of 2Al floods the negative electrode after sintering in lower than the dry hydrogen of-60 ℃ at dew point, impregnation technology is in the time of 1250 ℃~1300 ℃, to be incubated 7min~12min, then within 2min, rise to 1740 ℃~1780 ℃, insulation 30s~70s, subsequently cooling;
9) remove the unnecessary cathode salt of cathode surface, and carry out machining according to figure paper size;
10) use nitrogen as medium, ion etching cleaning is carried out on target surface, makes cathode emission surface expose fresh perforate.
The barium-tungsten dispense cathode of this kind of high current density adopts double base, and upper strata adopts the tungsten powder of the specific particle of given shape to suppress and form as base material, and lower floor adopts tungsten powder to mix the compacting as base material with rhenium powder and forms, and 100A/cm can be stably provided 2current density, meet high-power, the anticathode demand of High power microwavs device, for the development of microwave device provides strong guarantee.

Claims (6)

1. the barium-tungsten dispense cathode of a high current density, it is characterized in that: described barium-tungsten dispense cathode comprises negative electrode molybdenum cylinder (3) and is filled in the double base in negative electrode molybdenum cylinder (3), described double base comprises the upper and lower, upper strata is the tungsten powder globular tungsten powder layer (1) that compacting forms as base material that adopts ball shape, and lower floor adopts tungsten powder to mix the tungsten-rhenium alloy layer (2) that compacting forms as base material with rhenium powder;
The preparation method of the barium-tungsten dispense cathode of described high current density comprises:
1) get tungsten powder and rhenium powder arbitrary shape, that granularity is less than 50 μ m and in hydrogen, purify annealing, in 800 ℃~950 ℃ environment, be incubated 20min~30min;
2) tungsten powder and rhenium powder after purifying are mixed according to the ratio of 10%~50%:90%~50%, prepare tungsten-rhenium alloy powder;
3) get the globular tungsten powder of particle diameter 2 μ m~10 μ m, similar ball shape, in hydrogen, purify annealing, in 800 ℃~950 ℃ environment, be incubated 20min~30min;
4) take appropriate globular tungsten powder, be filled in negative electrode molybdenum cylinder (3), and make powder plain;
5) take again appropriate W-Re mixed powder, be filled in step 4) after negative electrode molybdenum cylinder (3) in, and make powder plain;
6) use 8~15T/cm 2pressure target suppress, the cell size of cathode substrate is controlled to 28%~40%;
7) in hydrogen, the negative electrode after compacting is carried out to sintering, in 1400 ℃~1600 ℃ environment, be incubated 30~70min;
8) adopt 3.5BaCO 30.5CaCO 3the aluminate of 2Al floods the negative electrode after sintering in lower than the dry hydrogen of-60 ℃ at dew point, impregnation technology is in the time of 1250 ℃~1300 ℃, to be incubated 7min~12min, then within 2min, rise to 1740 ℃~1780 ℃, insulation 30s~70s, subsequently cooling;
9) remove the unnecessary cathode salt of cathode surface, and carry out machining according to figure paper size;
10) use nitrogen as medium, ion etching cleaning is carried out on target surface, makes cathode emission surface expose fresh perforate.
2. the barium-tungsten dispense cathode of a kind of high current density according to claim 1, is characterized in that: the particle diameter of described upper strata globular tungsten powder is 2 μ m~10 μ m.
3. the barium-tungsten dispense cathode of a kind of high current density according to claim 1 and 2, is characterized in that: tungsten powder and rhenium powder in described tungsten-rhenium alloy layer (2) mix according to the ratio of 10%~50%:90%~50%.
4. the barium-tungsten dispense cathode of a kind of high current density according to claim 2, is characterized in that: the particle diameter of described upper strata globular tungsten powder is preferably 4 μ m.
5. the barium-tungsten dispense cathode of a kind of high current density according to claim 3, is characterized in that: the tungsten powder in described tungsten-rhenium alloy layer (2) and the proportion optimization of rhenium powder are 20%:80%.
6. the barium-tungsten dispense cathode of a kind of high current density according to claim 1, is characterized in that: the cell size of described cathode substrate is preferably controlled at 33%~35%.
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Address after: 241000 No.01 Eshan Road, high tech Development Zone, Yijiang District, Wuhu City, Anhui Province

Patentee after: ANHUI HUADONG PHOTOELECTRIC TECHNOLOGY INSTITUTE Co.,Ltd.

Address before: 241000 Anhui Province, Wuhu city Yijiang District South high tech Development Zone Technology Park mansion

Patentee before: Anhui Huadong Polytechnic Institute