CN102623890A - Porous Defect-Matched Photonic Crystal Surface Emitting Laser - Google Patents
Porous Defect-Matched Photonic Crystal Surface Emitting Laser Download PDFInfo
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- CN102623890A CN102623890A CN2012100847536A CN201210084753A CN102623890A CN 102623890 A CN102623890 A CN 102623890A CN 2012100847536 A CN2012100847536 A CN 2012100847536A CN 201210084753 A CN201210084753 A CN 201210084753A CN 102623890 A CN102623890 A CN 102623890A
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Abstract
The invention belongs to the field of photoelectrons, and particularly relates to a porous defect matching type photonic crystal surface emitting laser. The surface emitting laser comprises a lower DBR (Distributed Bragg Reflector), an active region, an oxidation limiting layer, an upper DBR and a P-type ohmic contact layer which are sequentially grown on a substrate, wherein oxidation holes are formed on the oxidation limiting layer; the surface emitting laser is characterized in that photonic crystal air holes are etched on the upper DBR and the P-type ohmic contact layer so as to manufacture a porous defect type photonic crystal structure; the porous defect type photonic crystal structure comprises the photonic crystal air holes and a photonic crystal defect hole; and as for the porous defect type photonic crystal structure, the cycle is 1-3 micron(s), the duty cycle is 0.3-0.9, the etching depth is 1-2 micron(s), and the diameter D of each oxidation hole is larger than the diameter d of the photonic crystal defect hole by the diameter b of one photonic crystal air hole, that is, D is equal to b plus d. The laser provided by the invention works in a state of low threshold current, small series resistance and high single mode output power, can be applied to oxidation limiting type photonic crystal surface emitting laser, and is free the influence of wavelength coverage.
Description
Technical field
The present invention belongs to the photoelectron technology field, specifically is the design and fabrication about a kind of new vertical cavity-face emitting semiconductor laser.
Background technology
Surface-emitting laser have low threshold current, dynamically single longitudinal mode operation, small divergence angle, cylindrical symmetric beam, high modulation bandwidth, be easy to advantages such as two dimension is integrated, be widely used in fields such as optical communication, optical storage and light demonstration.Common oxidation restricted type vertical-cavity-face emitting semiconductor laser material is mainly obtained through molecular beam epitaxy (MBE) or the technological extension of metallochemistry vapour deposition (MOCVD) by III-V compound semiconductor material.Obtain the vertical-cavity-face emitting semiconductor laser device through semiconductor technology, its basic structure is as shown in Figure 1.Common is singulated dies and array structure.
Through introducing photon crystal structure among the DBR on surface-emitting laser 3 is a kind of method of effective realization surface-emitting laser single mode high power work.It can success overcome the common following shortcoming of oxidation restricted type surface-emitting laser:
1, traditional oxidation restricted type cavity-face emitting semiconductor laser improves the method that power output generally can only adopt increase light hole area or increase electric current to inject.Adopt to increase the distribution variation that the light hole area method can make the active area carrier density, the center current density diminishes, and makes threshold current increase; When adopting big electric current to inject, spatial hole burning can appear in the charge carrier distribution of active area, has influence on the distribution of gain and refractive index, how horizontal module lasing occurs.
2, for realizing single mode operation, must make the carrier density distribution of active area core more even, so general oxidation bore dia during less than 5 μ m, just is prone to the realization single mode operation.So little oxidation bore dia must cause big series resistance.Very big series resistance will inevitably produce the thermal stability variation that a lot of heats make device simultaneously.Making little oxidation bore dia is difficult to realize on technology.Less oxidation bore dia makes that also efficient lighting area reduces, and the single mode power output reduces.
But photon crystal structure use among the DBR3 on surface-emitting laser can bring following problem:
In the less photon crystal structure of photonic crystal airport diameter, the pattern of device is revealed very serious, and device generally is difficult to swash penetrate.When photonic crystal airport diameter was big, the higher order mode loss of device increased, and the threshold current of device can unusual increasing.The photonic crystal defect bore dia of single defective photon crystal-face transmitting laser and the ratio of oxidation bore dia are less, and most of injection current of device is scattered and has lost.Therefore the modal loss of photon crystal-face transmitting laser ubiquity is higher, threshold current big, single mode power is little and problem such as poor heat stability.
In order to overcome the above problem of photon crystal-face transmitting laser; We have adopted many defectives photon crystal structure on photon crystal structure, simultaneously oxidation hole and photonic crystal defect hole coupling are coupled together to prepare the photon crystal-face transmitting laser of the high single mode power output of many defectives low threshold current.
Summary of the invention
The objective of the invention is to overcome above prior art shortcoming, design and make the photon crystal-face transmitting laser of a kind of low threshold current, little series resistance, high single mode power output.
For achieving the above object, porous defective matching type photonic crystal surface-emitting laser of the present invention is oxidation restricted type surface-emitting laser is combined design and makes with many defectives photonic crystal a novel photon crystal-face transmitting laser.
Porous defective matching type photonic crystal surface-emitting laser includes DBR under growing successively on the substrate successively, active area, and the oxidation limiting layer, last DBR and P type ohmic contact layer, the oxidation limiting layer is provided with the oxidation hole;
It is characterized in that: in last DBR and P type ohmic contact layer, etch the photonic crystal airport and produce porous deficiency photon crystal structure, porous deficiency photon crystal structure comprises photonic crystal airport and photonic crystal defect hole;
Porous deficiency photon crystal structure cycle 1-3 micron, duty ratio is 0.3-0.9, the defective hole number when porous deficiency photon crystal structure is the triangular crystal lattice structure is less than 19; Number was less than 16 when porous deficiency photon crystal structure was the tetragonal structure, and etching depth is at the 1-2 micron, and the diameter D in simultaneous oxidation hole is than diameter d big photonic crystal airport diameter b, i.e. a D=b+d in photonic crystal defect hole.
The present invention effectively combines porous deficiency photon crystal structure and oxidation hole, can effectively reduce the threshold current of surface-emitting laser, realizes single transverse mode high power surface-emitting laser.Realize the preparation of single-mode photon crystal surface-emitting laser device, obtained low threshold value single-mode high-power output.
Compared with prior art, the present invention has the following advantages
1, preparation technology is simple, does not need complicated technology, on the extension chip of common surface-emitting laser, just can realize the high-power and low threshold value work of single mode of device simultaneously.
2, on photon crystal structure, adopted many defect sturctures of minor cycle, successful inhibition problem such as the threshold current that brings of the higher order mode loss of pattern leakage problem and large period airport of minor cycle airport photon crystal structure is excessive.
3, improved photonic crystal defect bore dia and oxidation bore dia ratio (as single deficiency photon crystal-face transmitting laser cycle be 5 microns; Photonic crystal airport diameter 2.5 micron devices (d/D)=(7/10); And the seven apertures in the human head deficiency photon crystal-face transmitting laser cycle is 2 microns, and photonic crystal airport diameter 1 micron devices then is (d/D)=(7/8))
4, utilize vertical matching process in porous deficiency photon crystal structure and oxidation hole to realize that the threshold current of device limits and mode confinement, can effectively reduce the threshold current and the modal loss of device, can effectively increase the sharp power of penetrating of device simultaneously.
5, stronger antijamming capability, higher transmission speed, (more than tens decibels side mode suppression ratio) more narrow linewidth, stronger modulating characteristic, simultaneously through using asymmetric photon crystal defect structure can control the polarization direction of laser.
Description of drawings
Below in conjunction with accompanying drawing and embodiment to further explain of the present invention
Last metal electrode (P type metal electrode) 1; P type ohmic contact layer 2; The last distribution Bragg reflector of cycle alternating growth (going up DBR) 3; Al
0.98Ga
0.02As oxidation limiting layer 4; Active area 5; Following distribution Bragg reflector (following DBR) 6; Substrate 7; N type metal electrode 8; Oxidation hole 9; Light hole 10; Photonic crystal airport 11; Deficiency photon crystal structure 12 (comprising 11 and 13); Photonic crystal defect hole 13.
Fig. 1, oxidation restricted type surface-emitting laser sketch map.
Fig. 2, porous deficiency photon crystal-face transmitting laser structural representation.
Fig. 3, seven apertures in the human head defective matching type photonic crystal surface-emitting laser front schematic view.
Fig. 4, seven apertures in the human head defective matching type photonic crystal surface-emitting laser perspective view.
Embodiment
Device material is to utilize molecular beam epitaxy (MBE) or metallochemistry vapour deposition (MOCVD) homepitaxy growth technique technology of preparing extension to obtain.Concrete manufacture craft is following: DBR6 under growing successively on the substrate 7, active area 5, Al
0.98Ga
0.02As oxidation limiting layer 4, last DBR 3 and P type ohmic contact layer 2.Obtain the epitaxial material of surface-emitting laser.
Produce not cleavage chip of surface-emitting laser through common surface-emitting laser technology again, the photonic crystal airport 11 that on the end face through DBR 3 in electron beam lithography (EBL) and induction coupling ion etching technology (ICP-RIE) light hole 10 at existing device on this chip, etches certain depth is again produced porous deficiency photon crystal structure 12 (like Fig. 2) to prepare porous deficiency photon crystal-face transmitting laser.Like Fig. 3.
The present invention is through introducing porous deficiency photon crystal structure 12 in surface-emitting laser, realize that transverse mode to surface-emitting laser limits to realize single mode output.Porous deficiency photon crystal structure 12 is mainly in last DBR3.Such structure and single hole defective photon crystal structure 12 are different, and the single mode condition of device work is relevant with the defective hole number.To with the device of triangular crystal lattice, we find that the number in hole of the porous deficiency photon crystal structure 12 of device should be less than 19.7 hole defect photon crystal structures 12 are structures of the brilliant cavity surface emitting lasers of the porous deficiency photon used always.To with the tetragonal structure, the number of the deficiency photonic crystal holes 12 of device should be less than 16, commonly used is 4 hole defect type photon crystal structures 12.
Because the diameter in photonic crystal defect hole 13 that will realize the device single mode operation is generally about the 3-8 micron, so the cycle of porous deficiency photon crystal structure 12 can not be excessive, generally about the 1-3 micron.If this be because the cycle too little, non-radiation meets very serious, device is difficult to work.The cycle of device while is excessive, and the diameter in photonic crystal defect hole 13 is too big, and device can't be realized single mode operation.
To with the duty ratio of the deficiency photon crystal structure 12 of porous deficiency photon crystal-face transmitting laser generally can not be too little; Because the diameter in photonic crystal defect hole 13 is bigger; So the refringence of device will increase accordingly, so duty ratio generally just can be operated in the single mode state at the 0.3-0.9 device.
The photonic crystal airport 11 of etching and general photon crystal-face transmitting laser also difference to some extent.Usually about etching depth 1-2 micron.The stable single mode operation that just can realize device very deeply that does not need etching.
Therefore; The single mode condition of porous defective photon crystal-face transmitting laser is a requirement photonic crystal cycle 1-3 micron; Duty ratio is about 0.3-0.9; The defective hole number of porous deficiency photon crystal structure 12 is less than 19 (triangular crystal lattice structures) or less than 16 (tetragonal structures), and etching depth just can realized the device single mode operation below 2 microns.
Want to realize the low threshold current and the high-power output of single mode of device simultaneously, we also will mate coupling with oxidation hole 9 and porous deficiency photon crystal structure 12.To it goes out luminous power by the decision of the diameter d in photonic crystal defect hole 13 with photon crystal-face transmitting laser, and its threshold current is by the diameter D decision in the oxidation hole 9 of device.Want to realize simultaneously that the low threshold current of device and single mode are high-power, just must come the diameter D in the oxidation hole 9 of reduction of device guaranteeing that device is operated under the situation of single mode.With crossing theory analysis and experimental verification, we find to have only the D=b+d during than big photonic crystal airport 11 diameter b of the diameter d in photonic crystal defect hole 13 as the diameter D in oxidation hole 9, and device just can be operated in single mode dress attitude.
Comprehensive above requirement, we have prepared like Fig. 3 seven apertures in the human head defective photon crystal-face transmitting laser, and device has been realized characteristics such as single mode, high-power, low threshold current, little series resistance.
Porous deficiency photon crystal structure 12 through above prepared in various methods just can carry out horizontal Mode Coupling with surface-emitting laser to be suppressed to make fundamental transverse mode to swash from the defective hole 13 of photonic crystal the high-rder mode of laser to penetrate.The effective refractive index of its relative peripheral region has been improved in photonic crystal defect hole 13 simultaneously; Similar with solid light photonic crystal fiber operation principle; Can form and guided wave structure formed transverse mode carried out more effective control, make it still can realize single transverse mode work when big in the bright dipping aperture.Guaranteeing single mode operation simultaneously like this, the diameter D in oxidation hole 9 can be increased to tens microns relatively, makes surface-emitting laser can obtain big single mode power output, and single mode power is from bringing up to several milliwatts below the original 1mW.The series resistance that simultaneously also reduces the general oxidation restricted type of serial resistance surface-emitting laser is at hundreds of ohm, and the resistance of porous defective photon crystal-face transmitting laser may diminish to below tens ohm.Thereby reduce the adverse effect of thermal effect and help device High Speed Modulation characteristic.
(is example with wavelength 850nm)
1, through at N
+On the type GaAs substrate growth obtain substrate 7 utilize the MOCVD method successively on substrate the growth 0.3 micron the GaAs resilient coating and then the growth N
+Al
0.1Ga
0.9As (60nm doping content 3 * 10
18Cm
-3) and n
+Al
0.9Ga
0.1As (68.19nm doping content 3 * 10
17Cm
-3) following DBR6, GaAs and the Al in 28 cycles constituting
0.3Ga
0.7Single active area 5, Al that AS forms
0.98Ga
0.02As (30nm doping content 1 * 10
18Cm
-3) oxidation limiting layer 4, P
+The Al that mixes
0.1Ga
0.9As (60nmAl
0.9Ga
0.1Last DBR3, the Al in 24 cycles that As (68.19nm) constitutes
0.1Ga
0.9The heavily doped ohmic contact layer 2 of As.(the perhaps common 850nm surface-emitting laser epitaxial wafer of IQE production)
2, the manufacture craft of the restricted surface-emitting laser of oxidation of utilization routine is again produced the oxidation restricted type surface-emitting laser chip (not making attenuate, sputter backplate reconciliation separating process) of the P electrode 1 of table top 75-95 micron, light hole 10 aperture 40-50 microns, oxidation hole 9 diameter 5-25 microns, 500 nanometer TiAu
3, will put into the SiO of chemical vapor deposition (PECVD) densification about sample surfaces deposit one layer thickness 300 nanometers with the sample of acetone and absolute ethyl alcohol and the clean oven dry of deionized water in proper order
2Oxide-film.
4, again in deposit SiO
2Last layer Zep520 electron beam adhesive is got rid of on the surface of oxide-film, preceding baking post bake, electron beam exposure, development, back baking.Prepare the cycle 1-3 micron of photonic crystal.Duty ratio equals 0.5, and the diameter of photonic crystal airport 11 is from 1-2 micron photonic crystal pattern.
5, etch away not protected SiO with reactive ion etching (RIE)
2Oxide-film, remove photoresist.Figure transfer on the glue is arrived SiO
2On the mask.
6, will have SiO
2The sample of mask is put into etching in the vacuum chamber of responding to coupling ion etching (ICP-RIE).Etching depth 1-2 micron is used SiO with the sample after the etching
2Corrosive liquid floats surperficial remaining SiO
2Mask.
7, be thinned to about 100 microns, sputter backplate 8 (backplate AuGeNiAu thickness 300nm), alloy, dissociate, pressure welding.Just can obtain needed laser.
8, test
With apparatus measures below several kinds of photon crystal-face transmitting lasers
Through using the instrument test cycle is 2 microns duty ratios when being 8 microns of 1.5 microns oxidation bore dias of etching depth of 0.5, and its spectral line width of seven apertures in the human head deficiency photon crystal-face transmitting laser is 0.1 nanometer, side mode suppression ratio 35dB.Use NFM to observe its hot spot characteristic and show that it is single mode.With its single mode power of laser test system test 1.7mW.70 ohm of threshold current 0.7mA, series resistances.
Cycle is 2.2 microns, and duty ratio is 0.5, and when 9 microns of 1.8 microns of etching depths and oxidation bore dias, its spectral line width of seven apertures in the human head deficiency photon crystal-face transmitting laser is 0.1 nanometer, side mode suppression ratio 35dB.Single mode power 2.5mW.53 ohm of threshold current 0.9mA, series resistances.
Cycle is 2 microns, and duty ratio is 0.5, and when 8 microns of 1.5 microns of etching depths and oxidation bore dias, tetragonal nine its spectral line widths of hole defect type photon crystal-face transmitting laser are 0.1 nanometer, side mode suppression ratio 35dB.Single mode power 2.1mW.64.35 ohm of threshold current 0.9mA, series resistances.
Cycle is 3 microns, and duty ratio is 0.5, and when 9 microns of 1.9 microns of etching depths and oxidation bore dias, tetragonal four its spectral line widths of hole defect type photon crystal-face transmitting laser are 0.1 nanometer, side mode suppression ratio 45dB.Single mode power 2.2mW.73 ohm of threshold current 0.9mA, series resistances.
Find to utilize porous deficiency photon crystal structure can increase the single mode power output of device and adopt the oxidation hole to be coupled simultaneously to make device be operated in high single mode power output and low threshold current shape body simultaneously through experiment with photonic crystal defect hole coupling.Though do not adopt the device of oxidation hole and photonic crystal defect hole coupling coupling can realize single mode operation, the threshold current of device sharply increases along with the increase of oxidation bore dia.Adopt coupling coupled apparatus threshold current to reduce a magnitude than the threshold current of the big twice device of its oxidation bore dia, the single mode power output has increased nearly 50%.
Claims (1)
1. porous defective matching type photonic crystal surface-emitting laser includes DBR under growing successively on the substrate successively, active area, and the oxidation limiting layer, last DBR and P type ohmic contact layer, the oxidation limiting layer is provided with the oxidation hole;
It is characterized in that: in last DBR and P type ohmic contact layer, etch the photonic crystal airport and produce porous deficiency photon crystal structure, porous deficiency photon crystal structure comprises photonic crystal airport and photonic crystal defect hole;
Porous deficiency photon crystal structure cycle 1-3 micron, duty ratio is 0.3-0.9, the defective hole number when porous deficiency photon crystal structure is the triangular crystal lattice structure is less than 19; Number was less than 16 when porous deficiency photon crystal structure was the tetragonal structure, and etching depth is at the 1-2 micron, and the diameter D in simultaneous oxidation hole is than diameter d big photonic crystal airport diameter b, i.e. a D=b+d in photonic crystal defect hole.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103869386A (en) * | 2014-02-27 | 2014-06-18 | 西北工业大学 | Device for generating vector light beams by utilizing multi-flaw photonic crystal microcavity |
| CN109861078A (en) * | 2019-04-02 | 2019-06-07 | 中国科学院长春光学精密机械与物理研究所 | A surface emitting laser and a surface emitting laser array |
| CN113140961A (en) * | 2021-04-20 | 2021-07-20 | 中国科学院半导体研究所 | Photonic crystal vertical cavity surface emitting laser |
| WO2022196394A1 (en) * | 2021-03-19 | 2022-09-22 | 住友電気工業株式会社 | Photonic crystal surface-emitting laser and method for manufacturing same |
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| US6696308B1 (en) * | 2000-10-27 | 2004-02-24 | Chan-Long Shieh | Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication |
| CN101588019A (en) * | 2009-06-19 | 2009-11-25 | 北京工业大学 | External cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device |
| CN101975554A (en) * | 2010-09-29 | 2011-02-16 | 北京工业大学 | Current-limitation aperture measuring method of non-destructive surface-emitting semiconductor laser |
-
2012
- 2012-03-27 CN CN2012100847536A patent/CN102623890A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6696308B1 (en) * | 2000-10-27 | 2004-02-24 | Chan-Long Shieh | Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication |
| CN101588019A (en) * | 2009-06-19 | 2009-11-25 | 北京工业大学 | External cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device |
| CN101975554A (en) * | 2010-09-29 | 2011-02-16 | 北京工业大学 | Current-limitation aperture measuring method of non-destructive surface-emitting semiconductor laser |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103869386A (en) * | 2014-02-27 | 2014-06-18 | 西北工业大学 | Device for generating vector light beams by utilizing multi-flaw photonic crystal microcavity |
| CN109861078A (en) * | 2019-04-02 | 2019-06-07 | 中国科学院长春光学精密机械与物理研究所 | A surface emitting laser and a surface emitting laser array |
| CN109861078B (en) * | 2019-04-02 | 2021-01-05 | 中国科学院长春光学精密机械与物理研究所 | A surface emitting laser and a surface emitting laser array |
| WO2022196394A1 (en) * | 2021-03-19 | 2022-09-22 | 住友電気工業株式会社 | Photonic crystal surface-emitting laser and method for manufacturing same |
| CN113140961A (en) * | 2021-04-20 | 2021-07-20 | 中国科学院半导体研究所 | Photonic crystal vertical cavity surface emitting laser |
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Application publication date: 20120801 |