CN102622984B - Display device and driving method thereof - Google Patents
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
- G09G3/3655—Details of drivers for counter electrodes, e.g. common electrodes for pixel capacitors or supplementary storage capacitors
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0876—Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
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Abstract
Description
本案是申请日为2007年10月24日、申请号为200710167150.1、发明名称为“显示设备及其驱动方法”的发明专利申请的分案申请。This case is a divisional application of an invention patent application with an application date of October 24, 2007, an application number of 200710167150.1, and an invention title of “Display Device and Its Driving Method”.
交叉参考相关申请Cross Reference Related Applications
本申请要求2006年10月24日提出的韩国专利申请第10-2006-0103375号和2007年4月27日提出的韩国专利申请第10-2007-0041300号的优先权,特此全文引用,以供参考。This application claims the benefit of Korean Patent Application No. 10-2006-0103375 filed on October 24, 2006 and Korean Patent Application No. 10-2007-0041300 filed on April 27, 2007, which are hereby incorporated by reference in their entirety for all purposes refer to.
技术领域technical field
本发明涉及显示设备及其驱动方法,尤其涉及亮度增加和功耗降低了的显示设备及其驱动方法。The present invention relates to a display device and a driving method thereof, in particular to a display device with increased brightness and reduced power consumption and a driving method thereof.
背景技术Background technique
一般说来,液晶显示器(“LCD”)包括含有像素电极的第一显示面板和含有公用电极的第二显示面板以及位于其间的含有各向异性介电材料的液晶层。像素电极排列成近似矩阵图样并与像例如薄膜晶体管(“TFT”)那样的开关元件连接,以便依次接收数据电压。公用电极在第二显示面板的整个表面上形成并且可以接收公用电压。液晶电容器由每个像素电极、公用电极和其间的液晶层形成。液晶电容器和与液晶电容器连接的开关元件形成像素单元。In general, a liquid crystal display ("LCD") includes a first display panel including pixel electrodes, a second display panel including common electrodes, and a liquid crystal layer including an anisotropic dielectric material therebetween. The pixel electrodes are arranged in an approximate matrix pattern and connected with switching elements such as thin film transistors (“TFTs”) to sequentially receive data voltages. The common electrode is formed on the entire surface of the second display panel and may receive a common voltage. A liquid crystal capacitor is formed by each pixel electrode, a common electrode, and a liquid crystal layer therebetween. A liquid crystal capacitor and a switching element connected to the liquid crystal capacitor form a pixel unit.
在LCD中,将电压施加在像素电极和公用电极上,在它们之间例如在液晶层中形成电场。电场的强度决定穿过液晶层的光线的透射率,和受施加在像素电极和公用电极上的电压控制形成所需图像。当电场只沿着一个方向(例如极性)施加在液晶层上时,LCD可能会变差。为了防止变差,可以关于例如每个帧、行或像素反转数据电压相对于公用电压极性的极性。In an LCD, a voltage is applied to a pixel electrode and a common electrode, forming an electric field between them, for example in a liquid crystal layer. The strength of the electric field determines the transmittance of light passing through the liquid crystal layer, and is controlled by the voltage applied to the pixel electrode and the common electrode to form a desired image. When an electric field is applied across the liquid crystal layer in only one direction (e.g. polarity), the LCD may deteriorate. To prevent degradation, the polarity of the data voltage with respect to the common voltage polarity may be reversed for each frame, row or pixel, for example.
但是,用于利用行反转(例如按像素的行反转数据电压的极性的反转方法)显示图像的数据电压的范围小于用于利用点反转(例如按各个像素反转数据电压的极性的反转方法)显示图像的数据电压的范围。因此,如果像在垂直对准(“VA”)模式LCD中那样,用于驱动液晶层中的液晶的阈电压较高,则用于图像显示的灰度电压表示的数据电压范围的低电压变得与阈电压一样低。因此,难以精确表示亮度。However, the range of the data voltage for displaying an image using row inversion (for example, an inversion method in which the polarity of the data voltage is reversed per row of pixels) is smaller than that for displaying an image using dot inversion (for example, inverting the data voltage for each pixel). polarity inversion method) to display the range of image data voltage. Therefore, if the threshold voltage for driving liquid crystal in the liquid crystal layer is high as in vertical alignment ("VA") mode LCD, the low voltage of the data voltage range represented by the gray scale voltage for image display becomes as low as the threshold voltage. Therefore, it is difficult to accurately represent brightness.
另外,像用在例如移动电话中的那些那样的小型LCD进行按像素的行反转数据电压的极性以降低功耗的行反转,但由于小型LCD要求高的分辨率,从而提高了功耗。In addition, small LCDs like those used in, for example, mobile phones perform row inversion that inverts the polarity of data voltages by rows of pixels to reduce power consumption, but since high resolution is required for small LCDs, performance is improved. consumption.
发明内容Contents of the invention
根据示范性实施例的显示设备包括:多条门线,用于传送具有开门电压和关门电压的门信号;多条数据线,用于传送数据电压;多条存储电极线,用于传送存储信号;排列成近似矩阵图样的多个像素,其中,多个像素的每个像素包括与多条门线中的一条门线和多条数据线中的一条数据线连接的开关元件、与开关元件和公用电压连接的液晶电容器和与开关元件和多条存储电极线中的一条存储电极线连接的存储电容器;门驱动器,用于沿着第一扫描方向或第二扫描方向生成门信号;以及多个信号生成电路,用于根据至少一个控制信号和至少一个门信号生成存储信号。A display device according to an exemplary embodiment includes: a plurality of gate lines for transmitting a gate signal having a gate opening voltage and a gate closing voltage; a plurality of data lines for transmitting a data voltage; a plurality of storage electrode lines for transmitting a storage signal ; A plurality of pixels arranged in an approximate matrix pattern, wherein each pixel of the plurality of pixels includes a switching element connected to a gate line in a plurality of gate lines and a data line in a plurality of data lines, and a switch element and a plurality of data lines a common voltage-connected liquid crystal capacitor and a storage capacitor connected to the switching element and one of the plurality of storage electrode lines; a gate driver for generating a gate signal along the first scanning direction or the second scanning direction; and a plurality of A signal generation circuit for generating a storage signal according to at least one control signal and at least one gate signal.
施加在多个像素的至少一个像素上的存储信号具有在充电数据电压充电到液晶电容器和存储电容器之后发生变化的电压电平,并且存储信号从多个信号生成电路的输出次序随门驱动器的扫描方向而变。The storage signal applied to at least one of the plurality of pixels has a voltage level that changes after the charging data voltage is charged to the liquid crystal capacitor and the storage capacitor, and an output sequence of the storage signal from the plurality of signal generation circuits follows scanning of the gate driver. direction changes.
当充电数据电压具有正极性时,存储信号可以从低电平改变成高电平,而当充电数据电压具有负极性时,存储信号可以从高电平改变成低电平。When the charging data voltage has a positive polarity, the storage signal may change from a low level to a high level, and when the charging data voltage has a negative polarity, the storage signal may change from a high level to a low level.
施加在多条存储电极线的给定存储电极线上的存储信号可以每相继帧反相。The storage signal applied to a given storage electrode line of the plurality of storage electrode lines may be inverted every successive frame.
公用电压可以是固定电压。The utility voltage may be a fixed voltage.
多个像素可以包括供给第一门信号的第一像素、与第一像素相邻并被供给第二门信号的第二像素和与第一像素相邻并被供给第三门信号的第三像素。The plurality of pixels may include a first pixel supplied with the first gate signal, a second pixel adjacent to the first pixel supplied with the second gate signal, and a third pixel adjacent to the first pixel supplied with the third gate signal .
多个信号生成电路可以包括将第一存储信号传送到第一像素的存储电极线的第一信号生成电路、将第二存储信号传送到第二像素的存储电极线的第二信号生成电路和将第三存储信号传送到第三像素的存储电极线的第三信号生成电路。The plurality of signal generation circuits may include a first signal generation circuit that transmits the first storage signal to the storage electrode line of the first pixel, a second signal generation circuit that transmits the second storage signal to the storage electrode line of the second pixel, and The third storage signal is transmitted to the third signal generating circuit of the storage electrode line of the third pixel.
在本发明的可替代示范性实施例中,将第一门信号或第三门信号供应给第二信号生成电路,或可以将第二门信号供应给第二信号生成电路。In an alternative exemplary embodiment of the present invention, the first gate signal or the third gate signal is supplied to the second signal generation circuit, or the second gate signal may be supplied to the second signal generation circuit.
至少一个控制信号可以包括第一控制信号、第二控制信号和第三控制信号。多个信号生成电路的至少一个信号生成电路可以包括接收至少一个门信号并根据至少一个门信号输出驱动控制信号的信号输入单元、接收第一控制信号并根据来自信号输入单元的驱动控制信号传送第一控制信号作为存储信号的存储信号施加单元、接收第二控制信号和第三控制信号和按照驱动控制信号改变控制单元的操作状态的控制单元和根据按照控制单元的操作状态施加的第二控制信号和第三控制信号,保持来自存储信号施加单元的存储信号的信号保持单元。The at least one control signal may include a first control signal, a second control signal and a third control signal. At least one signal generation circuit of the plurality of signal generation circuits may include a signal input unit receiving at least one gate signal and outputting a drive control signal according to the at least one gate signal, receiving a first control signal and transmitting a second drive control signal according to the drive control signal from the signal input unit. a control signal as a storage signal applying unit for the storage signal, a control unit for receiving the second control signal and the third control signal and changing the operation state of the control unit according to the driving control signal, and the second control signal applied according to the operation state of the control unit and a third control signal, a signal holding unit that holds the storage signal from the storage signal applying unit.
信号输入单元可以进一步接收每一个具有基于门驱动器扫描方向的信号状态的第一方向信号和第二方向信号。第一方向信号和第二方向信号可以具有实际上相反的相位。The signal input unit may further receive the first direction signal and the second direction signal each having a signal state based on a scanning direction of the gate driver. The first direction signal and the second direction signal may have substantially opposite phases.
至少一个门信号可以包括第一门信号和第二门信号,和第一门信号的开门电压施加时间与第二门信号的开门电压施加时间之间的时间差是大约两个水平周期(“2H”)。At least one gate signal may include a first gate signal and a second gate signal, and a time difference between the gate opening voltage application time of the first gate signal and the gate opening voltage application time of the second gate signal is approximately two horizontal periods ("2H" ).
信号输入单元可以按照第一方向信号和第二方向信号选择第一门信号和第二门信号之一,并根据所选第一门信号或第二门信号输出驱动控制信号。The signal input unit may select one of the first gate signal and the second gate signal according to the first direction signal and the second direction signal, and output a driving control signal according to the selected first gate signal or the second gate signal.
第一方向信号和第二方向信号每一个可以保持实际上一致的电平。Each of the first direction signal and the second direction signal may maintain a substantially uniform level.
第一方向信号和第二方向信号可以分别具有第一电平电压和第二电平电压,和第一方向信号和第二方向信号可以每相继预定周期在第一电平电压和第二电平电压之间交替。预定周期可以是大约一个水平周期(“1H”)。The first direction signal and the second direction signal may have a first level voltage and a second level voltage, respectively, and the first direction signal and the second direction signal may be between the first level voltage and the second level every successive predetermined periods. Alternate between voltages. The predetermined period may be approximately one horizontal period (“1H”).
施加在多个信号生成电路的第一信号生成电路上的第一方向信号的相位和施加在与第一信号生成电路相邻的多个信号生成电路的第二信号生成电路上的第二方向信号的相位可以实际上相反。The phase of the first direction signal applied to the first signal generation circuit of the plurality of signal generation circuits and the second direction signal applied to the second signal generation circuit of the plurality of signal generation circuits adjacent to the first signal generation circuit The phases of can be practically reversed.
信号输入单元可以包括含有与第一方向信号连接的控制端、与第一门信号连接的输入端和与驱动控制信号连接的输出端的第一晶体管。信号输入单元可以进一步包括含有与第二方向信号连接的控制端、与第二门信号连接的输入端和与驱动控制信号连接的输出端的第二晶体管。The signal input unit may include a first transistor including a control terminal connected to the first direction signal, an input terminal connected to the first gate signal, and an output terminal connected to the driving control signal. The signal input unit may further include a second transistor including a control terminal connected to the second direction signal, an input terminal connected to the second gate signal, and an output terminal connected to the driving control signal.
至少一个门信号可以包括第一门信号和第二门信号,和第一门信号的开门电压施加时间与第二门信号的开门电压施加时间之间的时间差是大约四个水平周期(“4H”)。The at least one gate signal may include a first gate signal and a second gate signal, and a time difference between the gate opening voltage application time of the first gate signal and the gate opening voltage application time of the second gate signal is approximately four horizontal periods ("4H" ).
信号输入单元可以按照第一门信号和第二门信号选择第一方向信号和第二方向信号之一,并根据所选方向信号输出驱动控制信号。The signal input unit may select one of the first direction signal and the second direction signal according to the first gate signal and the second gate signal, and output a driving control signal according to the selected direction signal.
第一方向信号和第二方向信号每一个可以保持一致的电平。Each of the first direction signal and the second direction signal may maintain a consistent level.
可以进一步将具有第一电平电压和与第一电平电压不同的第二电平电压的时钟信号供应给信号输入单元,和时钟信号可以每相继预定周期在第一电平电压和第二电平电压之间交替。预定周期可以是大约两个水平周期(“2H”)。A clock signal having a first level voltage and a second level voltage different from the first level voltage may be further supplied to the signal input unit, and the clock signal may switch between the first level voltage and the second level voltage every successive predetermined periods. Alternate between flat voltages. The predetermined period may be approximately two horizontal periods (“2H”).
施加在多个信号生成电路的第一信号生成电路上的时钟信号的相位和施加在多个信号生成电路的第二相邻信号生成电路上的时钟信号的相位实际上相反。A phase of a clock signal applied to a first signal generating circuit of the plurality of signal generating circuits and a phase of a clock signal applied to a second adjacent signal generating circuit of the plurality of signal generating circuits are substantially opposite.
信号输入单元可以通过按照时钟信号改变基于第一方向信号或第二方向信号的驱动控制信号的状态操作信号保持单元。The signal input unit may operate the signal holding unit by changing a state of the driving control signal based on the first direction signal or the second direction signal according to the clock signal.
在可替代示范性实施例中,信号输入单元可以包括:含有与第一方向信号连接的输入端、与第一门信号连接的控制端和与驱动控制信号连接的输出端的第一晶体管;含有与第二方向信号连接的输入端、与第二门信号连接的控制端和与驱动控制信号连接的输出端的第二晶体管;以及含有与关门电压连接的输入端、与时钟信号连接的控制端和与驱动控制信号连接的输出端的第三晶体管。In an alternative exemplary embodiment, the signal input unit may include: a first transistor having an input terminal connected to the first direction signal, a control terminal connected to the first gate signal, and an output terminal connected to the driving control signal; The input end connected with the second direction signal, the control end connected with the second gate signal and the second transistor with the output end connected with the driving control signal; and the input end connected with the closing gate voltage, the control end connected with the clock signal and the A third transistor that drives the output of the control signal connection.
施加在多条存储电极线的第一存储电极线上的存储信号的电压电平和施加在多条存储电极线的第二相邻存储电极线上的存储信号的电压电平实际上相同。第一控制信号的电压电平、第二控制信号的电压电平和第三控制信号的电压电平在给定帧内实际上一致和每相继帧反相。A voltage level of a storage signal applied to a first storage electrode line of the plurality of storage electrode lines is substantially the same as a voltage level of a storage signal applied to a second adjacent storage electrode line of the plurality of storage electrode lines. The voltage level of the first control signal, the voltage level of the second control signal and the voltage level of the third control signal are substantially identical within a given frame and inverted every successive frame.
可以将门时钟信号和具有第一电平电压和与第一电平电压不同的第二电平电压的供应给信号输入单元,和时钟信号可以每相继预定周期在第一电平电压和第二电平电压之间交替。预定周期可以是大约两个水平周期(“2H”)。A gate clock signal and a voltage having a first level voltage and a second level voltage different from the first level voltage may be supplied to the signal input unit, and the clock signal may be switched between the first level voltage and the second level voltage every successive predetermined periods. Alternate between flat voltages. The predetermined period may be approximately two horizontal periods (“2H”).
施加在多个信号生成电路的第一信号生成电路上的时钟信号的相位和施加在多个信号生成电路的第二相邻信号生成电路上的时钟信号的相位实际上相反。A phase of a clock signal applied to a first signal generating circuit of the plurality of signal generating circuits and a phase of a clock signal applied to a second adjacent signal generating circuit of the plurality of signal generating circuits are substantially opposite.
在可替代示范性实施例中,信号输入单元可以通过按照时钟信号改变基于至少一个门信号的驱动时钟信号的状态操作信号保持单元。并且,信号输入单元可以包括含有每一个都与门信号连接的控制端和输入端和与驱动控制信号连接的输出端的第一晶体管;以及含有与时钟信号连接的控制端、与门信号连接的输入端和与驱动控制信号连接的输出端的第二晶体管。In an alternative exemplary embodiment, the signal input unit may operate the signal holding unit by changing a state of the driving clock signal based on the at least one gate signal according to the clock signal. Also, the signal input unit may include a first transistor including a control terminal and an input terminal each connected to a gate signal and an output terminal connected to a drive control signal; and a control terminal connected to a clock signal and an input terminal connected to a gate signal. terminal and a second transistor at the output terminal connected to the drive control signal.
存储信号施加单元可以包括含有与信号输入单元的输出端连接的控制端、与第一控制信号连接的输入端和与存储电极线连接的输出端的第一晶体管。The storage signal applying unit may include a first transistor including a control terminal connected to the output terminal of the signal input unit, an input terminal connected to the first control signal, and an output terminal connected to the storage electrode line.
控制单元可以包括含有与信号输入单元的输出端连接的控制端和与第二控制信号连接的输入端的第二晶体管和含有与信号输入单元的输出端连接的控制端和与第三控制信号连接的输入端的第三晶体管。The control unit may include a second transistor having a control terminal connected to the output terminal of the signal input unit and an input terminal connected to the second control signal, and a second transistor comprising a control terminal connected to the output terminal of the signal input unit and a control terminal connected to the third control signal. The third transistor at the input.
信号保持单元可以包括含有与第三晶体管的输出端连接的控制端、与第一驱动电压连接的输入端和与存储电极线连接的输出端的第四晶体管和含有与第二晶体管的输出端连接的控制端、与第二驱动电压连接的输入端和与存储电极线连接的输出端的第五晶体管。信号保持单元可以进一步包括连接在第四晶体管的输入端和控制端之间的第一电容器和连接在第五晶体管的输入端和控制端之间的第二电容器。The signal holding unit may include a fourth transistor including a control terminal connected to the output terminal of the third transistor, an input terminal connected to the first driving voltage, and an output terminal connected to the storage electrode line, and a fourth transistor connected to the output terminal of the second transistor. A fifth transistor having a control terminal, an input terminal connected to the second driving voltage, and an output terminal connected to the storage electrode line. The signal holding unit may further include a first capacitor connected between the input terminal and the control terminal of the fourth transistor and a second capacitor connected between the input terminal and the control terminal of the fifth transistor.
施加在多条存储电极线的第一存储电极线上的存储信号的电压电平和施加在多条存储电极线的第二相邻存储电极线上的存储信号的电压电平不同。A voltage level of a storage signal applied to a first storage electrode line of the plurality of storage electrode lines is different from a voltage level of a storage signal applied to a second adjacent storage electrode line of the plurality of storage electrode lines.
第一控制信号、第二控制信号和第三控制信号每一个可以具有第一电平电压和第二电平电压,和第一控制信号、第二控制信号和第三控制信号的各自电平在给定帧内可以每相继周期在第一电平电压和第二电平电压之间交替。并且,第一控制信号、第二控制信号和第三控制信号的各自电平可以每隔一个帧反相。Each of the first control signal, the second control signal and the third control signal may have a first level voltage and a second level voltage, and the respective levels of the first control signal, the second control signal and the third control signal are at Alternating between the first level voltage and the second level voltage may occur every successive period within a given frame. And, respective levels of the first control signal, the second control signal, and the third control signal may be inverted every other frame.
根据本发明示范性实施例的显示设备可以进一步包括将门信号传送到多个信号生成电路中的一个信号生成电路的至少一条附加门线。The display device according to an exemplary embodiment of the present invention may further include at least one additional gate line transmitting a gate signal to one signal generating circuit of the plurality of signal generating circuits.
传送到多条门线的第一门线的第一门信号的开门电压和传送到多条门线的相邻第二门线的第二门信号的开门电压在预定时间周期的至少一部分内在时间上相互重叠。A gate opening voltage of a first gate signal transmitted to a first gate line of the plurality of gate lines and a gate opening voltage of a second gate signal transmitted to an adjacent second gate line of the plurality of gate lines within at least a portion of a predetermined time period overlap each other.
预定时间周期的间隔可以是大约一个水平周期(“1H”)。The interval of the predetermined time period may be about one horizontal period ("1H").
本发明的又一个示范性实施例提供了一种液晶显示器的驱动方法。该液晶显示器包括多条门线,用于传送具有开门电压的门信号;多条数据线,用于传送数据电压;多条存储电极线,用于传送存储信号;多个开关元件,多个开关元件的每个开关元件与多条门线中的一条门线和多条数据线中的一条数据线连接;多个像素,多个像素的每个像素包括与多个开关元件中的一个开关元件和多条存储电极线中的一条存储电极线连接的存储电容器;门驱动器,用于沿着第一扫描方向或第二扫描方向生成门信号;以及多个信号生成电路,用于生成存储信号。Still another exemplary embodiment of the present invention provides a driving method of a liquid crystal display. The liquid crystal display includes a plurality of gate lines for transmitting gate signals with a gate opening voltage; a plurality of data lines for transmitting data voltages; a plurality of storage electrode lines for transmitting storage signals; a plurality of switching elements, a plurality of switches Each switching element of the element is connected to one gate line among the plurality of gate lines and one data line among the plurality of data lines; a plurality of pixels, each pixel of the plurality of pixels includes a switching element connected to one of the plurality of switching elements a storage capacitor connected to one of the plurality of storage electrode lines; a gate driver for generating gate signals along the first or second scanning direction; and a plurality of signal generating circuits for generating storage signals.
该驱动方法包括将第一门信号施加在与多个像素的第一像素连接的多条门线的第一门线上,将第一数据电压施加在与第一像素连接的多条数据线的第一数据线上,将第二门信号施加在与多个像素的第二像素连接的多条门线的第二门线上,并根据第二门信号将存储信号输出到第一像素。存储信号的输出次序随门驱动器的第一扫描方向或第二扫描方向而变。The driving method includes applying a first gate signal to a first gate line of a plurality of gate lines connected to a first pixel of a plurality of pixels, and applying a first data voltage to a plurality of data lines connected to a first pixel. Applying a second gate signal to a second gate line of the plurality of gate lines connected to a second pixel of the plurality of pixels on the first data line, and outputting a storage signal to the first pixel according to the second gate signal. The output order of the storage signals varies with the first scanning direction or the second scanning direction of the gate driver.
第一门信号的开门电压的施加时间和第二门信号的开门电压的施加时间相隔大约两个水平周期(“2H”),或在一个可替代示范性实施例中,相隔大约四个水平周期(“4H”)。The application time of the gate opening voltage of the first gate signal and the application time of the gate opening voltage of the second gate signal are separated by approximately two horizontal periods (“2H”), or in an alternative exemplary embodiment, approximately four horizontal periods apart. ("4H").
在再一个示范性实施例中,提供了一种液晶显示器的驱动方法。该液晶显示器包括多条门线,用于传送具有开门电压的门信号;多条数据线,用于传送数据电压;多条存储电极线,用于传送存储信号;多个开关元件,多个开关元件的每个开关元件与多条门线中的一条门线和多条数据线中的一条数据线连接;多个像素,多个像素的每个像素包括与多个开关元件中的一个开关元件和多条存储电极线中的一条存储电极线连接的存储电容器;门驱动器,用于沿着第一扫描方向或第二扫描方向生成门信号;以及多个信号生成电路,用于生成存储信号。In yet another exemplary embodiment, a driving method of a liquid crystal display is provided. The liquid crystal display includes a plurality of gate lines for transmitting gate signals with a gate opening voltage; a plurality of data lines for transmitting data voltages; a plurality of storage electrode lines for transmitting storage signals; a plurality of switching elements, a plurality of switches Each switching element of the element is connected to one gate line among the plurality of gate lines and one data line among the plurality of data lines; a plurality of pixels, each pixel of the plurality of pixels includes a switching element connected to one of the plurality of switching elements a storage capacitor connected to one of the plurality of storage electrode lines; a gate driver for generating gate signals along the first or second scanning direction; and a plurality of signal generating circuits for generating storage signals.
该驱动方法包括将门信号施加在与多个像素中的一个像素连接的多条门线中的一条门线上,将数据电压施加在与该像素连接的多条数据线中的一条数据线上,并根据门信号将存储信号输出到该像素。存储信号的输出次序随门驱动器的第一扫描方向或第二扫描方向而变。The driving method includes applying a gate signal to one of the plurality of gate lines connected to one of the plurality of pixels, applying a data voltage to one of the plurality of data lines connected to the pixel, And output the storage signal to the pixel according to the gate signal. The output order of the storage signals varies with the first scanning direction or the second scanning direction of the gate driver.
附图说明Description of drawings
通过结合附图对本发明的示范性实施例作进一步详细描述,本发明的上面和其它方面、特征和优点将变得更加显而易见,在附图中:The above and other aspects, features and advantages of the present invention will become more apparent by describing in further detail exemplary embodiments of the present invention in conjunction with the accompanying drawings, in which:
图1是根据本发明一个示范性实施例的液晶显示器的方块图;1 is a block diagram of a liquid crystal display according to an exemplary embodiment of the present invention;
图2是根据本发明一个示范性实施例的液晶显示器的一个像素的等效电路图;2 is an equivalent circuit diagram of a pixel of a liquid crystal display according to an exemplary embodiment of the present invention;
图3是根据本发明一个示范性实施例的信号生成电路的示意性电路图;3 is a schematic circuit diagram of a signal generating circuit according to an exemplary embodiment of the present invention;
图4是根据图3中的本发明示范性实施例的信号生成电路的信号时序图;FIG. 4 is a signal timing diagram of a signal generating circuit according to an exemplary embodiment of the present invention in FIG. 3;
图5是根据本发明另一个示范性实施例的液晶显示器的方块图;5 is a block diagram of a liquid crystal display according to another exemplary embodiment of the present invention;
图6是根据图5中的本发明示范性实施例的存储信号生成电路的信号生成电路的示意性电路图;6 is a schematic circuit diagram of a signal generating circuit of a storage signal generating circuit according to an exemplary embodiment of the present invention in FIG. 5;
图7A和图7B是根据图6中的本发明示范性实施例的信号生成电路的信号时序图;7A and 7B are signal timing diagrams of a signal generating circuit according to an exemplary embodiment of the present invention in FIG. 6;
图8A和图8B是根据本发明一个可替代示范性实施例的信号生成电路的信号时序图;8A and 8B are signal timing diagrams of a signal generating circuit according to an alternative exemplary embodiment of the present invention;
图9是根据本发明另一个示范性实施例的液晶显示器的方块图;9 is a block diagram of a liquid crystal display according to another exemplary embodiment of the present invention;
图10是根据图9中的本发明示范性实施例的信号生成电路的示意性电路图;FIG. 10 is a schematic circuit diagram of a signal generating circuit according to an exemplary embodiment of the present invention in FIG. 9;
图11是根据图10中的本发明示范性实施例的信号生成电路的平面布局图;FIG. 11 is a plan layout diagram of a signal generation circuit according to an exemplary embodiment of the present invention in FIG. 10;
图12是例示根据本发明一个实施例的施加在门驱动器上的门时钟信号与施加在存储信号发生器上的存储时钟信号的关系的信号时序图;12 is a signal timing diagram illustrating the relationship between a gate clock signal applied to a gate driver and a storage clock signal applied to a storage signal generator according to an embodiment of the present invention;
图13A和图13B是根据图10中的本发明示范性实施例的信号生成电路的信号时序图;13A and 13B are signal timing diagrams of a signal generating circuit according to an exemplary embodiment of the present invention in FIG. 10;
图14是根据本发明另一个示范性实施例的液晶显示器的方块图;14 is a block diagram of a liquid crystal display according to another exemplary embodiment of the present invention;
图15是根据图14中的本发明示范性实施例的信号生成电路的示意性电路图;FIG. 15 is a schematic circuit diagram of a signal generating circuit according to an exemplary embodiment of the present invention in FIG. 14;
图16是根据图15中的本发明示范性实施例的信号生成电路的平面布局图;FIG. 16 is a plan layout diagram of a signal generating circuit according to an exemplary embodiment of the present invention in FIG. 15;
图17A是利用行反转的根据图15中的本发明示范性实施例的信号生成电路的信号时序图;以及17A is a signal timing diagram of a signal generation circuit according to the exemplary embodiment of the present invention in FIG. 15 using row inversion; and
图17B是利用帧反转的根据图15中的本发明示范性实施例的信号生成电路的信号时序图。FIG. 17B is a signal timing diagram of the signal generation circuit according to the exemplary embodiment of the present invention in FIG. 15 using frame inversion.
本发明详述Detailed description of the invention
现在,在下文中参照示出本发明示范性实施例的附图更充分地描述本发明。但是,本发明可以以许多不同形式实施,不应该理解为局限于这里给出的实施例。更确切地说,提供这些实施例是为了使本公开变得全面彻底,并充分地向本领域的普通技术人员传达本发明的范围。相同的标号自始至终表示相同的元件。Now, the present invention will be described more fully hereinafter with reference to the accompanying drawings that illustrate exemplary embodiments of the invention. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals denote like elements throughout.
应该明白,当一个元件被称为“在”另一个元件“上”时,它可以直接在其它元件上或其间可以存在插入元件(intervening element)。与此相比,当一个元件被称为“直接在”另一个元件“上”时,不存在插入元件。正如本文使用的那样,术语“和/或”包括一个或多个相关列出项的任何和所有组合。It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present therebetween. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
应该明白,尽管术语“第一”、“第二”、“第三”等在本文中可以用于描述各种元件、部件、区域、层和/或部分,但这些元件、部件、区域、层和/或部分不应该受这些术语限制。这些术语只用于将一个元件、部件、区域、层或部分与另一个元件、部件、区域、层或部分区分开。因此,可以不偏离本发明教导地将下面讨论的第一元件、部件、区域、层或部分命名为第二元件、部件、区域、层或部分。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
本文使用的术语只是为了描述特定实施例,而不是打算限制本发明。正如本文使用的那样,除非上下文另有清楚表明,单数形式“一个”、“一种”和“该”也有意包括复数形式。还应该明白,术语“包含”或“包括”当用在本说明书中时,规定存在所述特征、区域、整数、步骤、操作、元件和/或部件,但不排除存在或附加一个或多个其它特征、区域、整数、步骤、操作、元件、部件和/或它们的组群。The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the term "comprising" or "comprising", when used in this specification, specifies the presence of said features, regions, integers, steps, operations, elements and/or components, but does not exclude the presence or addition of one or more Other features, regions, integers, steps, operations, elements, parts and/or groups thereof.
而且,像“下”或“底”和“上”或“顶”那样的相对术语在本文中可以用于描述如图所示,一个元件与其它元件的关系。应该明白,除了描绘在图中的取向之外,相对术语有意包含设备的不同取向。例如,如果将一个图中的设备翻转过来,那么,描述成在其它元件“下”侧的元件变成在其它元件的“上”侧。因此,视图的具体取向而定,示范性术语“下”可以包含“下”和“上”的取向。类似地,如果将一个图中的设备翻转过来,那么,描述成“在”其它元件“下面”或“下方”的元件变成“在”其它元件的“上面”。因此,示范性术语“在...下面”或“在...下方”可以包含上面和下面的取向。Also, relative terms like "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to other elements as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, depending on the particular orientation of the view, the exemplary term "below" can encompass both "lower" and "upper" orientations. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.
除非另有定义,用在本文中的所有术语(包括技术和科学术语)具有与本领域的普通技术人员通常所理解相同的含义。还应该明白,像定义在常用词典中的那些那样的术语应该解释为具有与它们在相关技术背景下的含义一致的含义,并且除非在本文中明确这样定义,不应该理想化或过分正式地加以解释。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art. It should also be understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the relevant technical context, and should not be idealized or overly formal unless explicitly so defined herein. explain.
这里将参照作为本发明的理想化实施例的示意性例示的剖面例示描述本发明的示范性实施例。这样,由于例如制造技术和/或容限等原因,期望有不同于例示的形状。因此,本发明的实施例不应该被理解成局限于本文例示的区域的特定形状,而是包括例如制造引起的形状偏离。例如,例示或描述成平坦的区域通常具有粗糙和/或非线性的特征。此外,例示的尖角可能是圆的。因此,例示在图中的区域是示意性的,它们的形状无意例示区域的确切形状,也无意限制本发明的范围。Exemplary embodiments of the present invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments of the present invention. As such, shapes other than those illustrated may be expected due to reasons such as manufacturing techniques and/or tolerances. Thus, embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat, often will have rough and/or non-linear features. Additionally, the illustrated sharp corners may be rounded. Thus, the regions illustrated in the figures are schematic and their shapes are not intended to illustrate the exact shape of a region and are not intended to limit the scope of the invention.
现在参照附图进一步详细描述本发明。The present invention will now be described in further detail with reference to the accompanying drawings.
图1是根据本发明一个示范性实施例的液晶显示器的方块图,而图2是根据本发明一个示范性实施例的液晶显示器的像素PX的等效电路图。FIG. 1 is a block diagram of a liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 2 is an equivalent circuit diagram of a pixel PX of the liquid crystal display according to an exemplary embodiment of the present invention.
如图1所示,根据本发明一个示范性实施例的液晶显示器(“LCD”)包括例如液晶面板组件300、门驱动器400、数据驱动器500、与数据驱动器500连接的灰度电压发生器800、存储信号发生器700和控制上面元件的信号控制器600,但不局限于这些。As shown in FIG. 1, a liquid crystal display ("LCD") according to an exemplary embodiment of the present invention includes, for example, a liquid crystal panel assembly 300, a gate driver 400, a data driver 500, a grayscale voltage generator 800 connected to the data driver 500, The signal generator 700 and the signal controller 600 controlling the above elements are stored, but not limited thereto.
液晶面板组件300包括多条信号线(G1-G2n、Gd、D1-Dm和S1-S2n)和与多条信号线(G1-G2n、Gd、D1-Dm和S1-S2n)连接并排列成近似矩阵图样的多个像素PX。The liquid crystal panel assembly 300 includes multiple signal lines (G 1 -G 2n , G d , D 1 -D m and S 1 -S 2n ) and multiple signal lines (G 1 -G 2n , G d , D 1 - D m and S 1 -S 2n ) are connected and arranged into a plurality of pixels PX in an approximate matrix pattern.
参照图2,液晶面板组件300包括面对面的下面板100和上面板200和位于下面板100和上面板200之间的液晶层3。Referring to FIG. 2 , the liquid crystal panel assembly 300 includes a lower panel 100 and an upper panel 200 facing each other and a liquid crystal layer 3 between the lower panel 100 and the upper panel 200 .
参照图1,多条信号线(G1-G2n、Gd、D1-Dm和S1-S2n)包括多条门线G1-G2n和Gd、多条数据线D1-Dm和多条存储电极线S1-S2n。Referring to Figure 1, multiple signal lines (G 1 -G 2n , G d , D 1 -D m and S 1 -S 2n ) include multiple gate lines G 1 -G 2n and G d , multiple data lines D 1 -D m and a plurality of storage electrode lines S 1 -S 2n .
多条门线G1-G2n和Gd包括传送门信号(下文统称为“扫描信号”)的多条正常门线G1-G2n和附加门线Gd。多条存储电极线S1-S2n与多条正常门线G1-G2n连接和传送存储信号。多条数据线D1-Dm传送数据电压。The plurality of gate lines G 1 -G 2n and G d includes a plurality of normal gate lines G 1 -G 2n and additional gate lines G d that transmit gate signals (hereinafter collectively referred to as "scanning signals"). Multiple storage electrode lines S 1 -S 2n are connected with multiple normal gate lines G 1 -G 2n to transmit storage signals. The plurality of data lines D 1 -D m transmit data voltages.
多条门线G1-G2n、Gd和多条存储电极线S1-S2n沿着第一近似(substantially)行方向延伸并实际上(substantially)相互平行,而多条数据线D1-Dm沿着与第一方向垂直的第二近似列方向延伸并实际上相互平行。A plurality of gate lines G 1 -G 2n , G d and a plurality of storage electrode lines S 1 -S 2n extend along a first approximate (substantially) row direction and are actually (substantially) parallel to each other, while a plurality of data lines D 1 - D m extend along a second approximate column direction perpendicular to the first direction and substantially parallel to each other.
再次参照图2,每个像素PX(例如,与第i正常门线Gi(i=1,2,...,2n)、第i正常存储信号线Si(i=1,2,...,2n)和第j数据线Dj(j=1,2,...,m)连接的像素PX)包括与信号线Gi和Dj连接的开关元件Q和与开关元件Q和存储信号线Si连接的液晶电容器Clc和存储电容器Cst。Referring to FIG. 2 again, each pixel PX (for example, with the i-th normal gate line G i (i=1, 2, ..., 2n), the i-th normal storage signal line S i (i=1, 2, . .., 2n) and the j-th data line Dj (j=1, 2, ..., m) connected to the pixel PX) includes a switching element Q connected to the signal line G i and D j and a switching element Q and The storage signal line S i is connected to the liquid crystal capacitor Clc and the storage capacitor Cst.
在一个示范性实施例中,开关元件Q可以实现成例如安装在下面板100上、像薄膜晶体管(“TFT”)那样的三端元件(three-terminal element),但不局限于此。如图2所示,三端元件含有与正常门线Gi连接的控制端、与数据线Dj连接的输入端和与液晶电容器Clc和存储电容器Cst连接的输出端。In an exemplary embodiment, the switching element Q may be implemented as, for example, a three-terminal element like a thin film transistor (“TFT”) mounted on the lower panel 100 , but is not limited thereto. As shown in FIG. 2, the three-terminal element has a control terminal connected to the normal gate line Gi , an input terminal connected to the data line Dj , and an output terminal connected to the liquid crystal capacitor Clc and the storage capacitor Cst.
下面板100的像素电极191和上面板200的公用电极270分别是液晶电容器Clc的第一端和第二端。位于像素电极191和公用电极270之间的液晶层3起介电材料的作用。像素电极191与开关元件Q连接。公用电极270位于整个上面板200上并接收公用电压Vcom(未示出)。可替代地,可以在下面板100上形成公用电极270,在这种情况下,像素电极191和公用电极270的至少一个可以具有近似线性的形状。The pixel electrode 191 of the lower panel 100 and the common electrode 270 of the upper panel 200 are the first end and the second end of the liquid crystal capacitor Clc, respectively. The liquid crystal layer 3 between the pixel electrode 191 and the common electrode 270 functions as a dielectric material. The pixel electrode 191 is connected to the switching element Q. The common electrode 270 is located on the entire upper panel 200 and receives a common voltage Vcom (not shown). Alternatively, the common electrode 270 may be formed on the lower panel 100, and in this case, at least one of the pixel electrode 191 and the common electrode 270 may have an approximately linear shape.
在本发明的可替代示范性实施例中,公用电压Vcom可以包括例如具有预定值的直流(“DC”)电压,但不局限于此。In alternative exemplary embodiments of the present invention, the common voltage Vcom may include, for example, a direct current (“DC”) voltage having a predetermined value, but is not limited thereto.
存储电容器Cst辅助液晶电容器Clc,通过形成其间是绝缘体的与存储电极线Si相交的像素电极191形成。The storage capacitor Cst assists the liquid crystal capacitor Clc by forming the pixel electrode 191 intersecting the storage electrode line S i with an insulator in between.
对于彩色显示,每个像素PX可以代表一种原色,例如,空分(apatialdivision),或可替代地,每个像素PX可以代表依赖于给定时间的不同原色,例如,时分。不管怎样,所需颜色都通过原色,例如,红色、绿色和蓝色的空间或时间和来显示。For a color display, each pixel PX may represent one primary color, eg an apatial division, or alternatively each pixel PX may represent a different primary color depending on a given time, eg a time division. Either way, the desired color is displayed by the spatial or temporal sum of the primary colors, eg, red, green, and blue.
图2示出了利用空分的本发明示范性实施例。如图所示,每个像素PX在与像素电极191相对应的上面板200的区域上,含有代表三原色之一,例如,红色、绿色和蓝色之一的滤色器230。在本发明的可替代示范性实施例中,滤色器230可以在下面板100的像素电极191的下面或上面形成。Figure 2 shows an exemplary embodiment of the invention utilizing air separation. As shown, each pixel PX includes a color filter 230 representing one of three primary colors, for example, one of red, green and blue, on a region of the upper panel 200 corresponding to the pixel electrode 191 . In an alternative exemplary embodiment of the present invention, the color filter 230 may be formed under or over the pixel electrode 191 of the lower panel 100 .
使光线极化的极化器(未示出)贴在液晶面板组件300上。A polarizer (not shown) for polarizing light is attached to the liquid crystal panel assembly 300 .
回头参照图1,灰度电压发生器800可以生成与像素PX的所需透射率有关的所有灰度电压或有限个灰度电压(下文称为“参考灰度电压”)。一些(参考)灰度电压相对于公用电压Vcom具有正极性,而其它(参考)灰度电压相对于公用电压Vcom具有负极性。Referring back to FIG. 1 , the gray voltage generator 800 may generate all gray voltages or a limited number of gray voltages (hereinafter referred to as 'reference gray voltages') related to the required transmittance of the pixel PX. Some (reference) grayscale voltages have positive polarity with respect to the common voltage Vcom, while other (reference) grayscale voltages have negative polarity with respect to the common voltage Vcom.
门驱动器400包括例如位于像左侧和右侧那样液晶面板组件300的相对侧的第一门驱动电路400a和第二门驱动电路400a,但不局限于此。The gate driver 400 includes, for example, a first gate driving circuit 400a and a second gate driving circuit 400a located on opposite sides of the liquid crystal panel assembly 300 like left and right sides, but is not limited thereto.
第一门驱动电路400a与多条门线G1-G2n和Gd的奇数号正常门线G1,G3,...,和G2n-1和附加门线Gd的一端连接。第二门驱动电路400b与多条门线G1-G2n和Gd的偶数号正常门线G2,G4,...,和G2n的一端连接。可替代地,第二门驱动电路400b可以与多条门线G1-G2n和Gd的奇数号正常门线G1,G3,...,和G2n-1和附加门线Gd的一端连接,而第一门驱动电路400a可以与多条门线G1-G2n和Gd的偶数号正常门线G2,G4,...,和G2n的一端连接。The first gate driving circuit 400a is connected to one end of the odd-numbered normal gate lines G1 , G3, ..., and G2n -1 of the plurality of gate lines G1 - G2n and Gd and the additional gate line Gd . The second gate driving circuit 400b is connected to one end of even-numbered normal gate lines G 2 , G 4 , . . . , and G 2n of the plurality of gate lines G 1 -G 2n and G d . Alternatively, the second gate drive circuit 400b can be connected to odd-numbered normal gate lines G 1 , G 3 , . . . , and G 2n -1 and additional gate lines G d , and the first gate drive circuit 400a can be connected to one end of the even-numbered normal gate lines G 2 , G 4 , . . . , and G 2n of the multiple gate lines G 1 -G 2n and G d .
第一门驱动电路400a和第二门驱动电路400b每一个都利用开门电压(gate-on voltage)Von和关门电压(gate-off voltage)Voff生成施加在多条门线G1-G2n和Gd上的门信号。Each of the first gate driving circuit 400a and the second gate driving circuit 400b uses a gate-on voltage (gate-on voltage) Von and a gate-off voltage (gate-off voltage) Voff to generate voltages applied to a plurality of gate lines G 1 -G 2n and G Gate signal on d .
在本发明的一个示范性实施例中,门驱动器400与多条信号线G1-G2n、Gd、D1-Dm和S1-S2n和开关元件Q一起集成到液晶面板组件300中。在可替代示范性实施例中,门驱动器400可以包括安装在液晶面板组件300上,或安装在附在液晶面板组件300上的薄膜封装(“TCP”)中的柔性印刷电路(“FPC”)薄膜上的至少一个集成电路(“IC”)芯片。可替代地,门驱动器400可以安装在分立印刷电路板(未示出)上。In an exemplary embodiment of the present invention, the gate driver 400 is integrated into the liquid crystal panel assembly 300 together with a plurality of signal lines G 1 -G 2n , G d , D 1 -D m and S 1 -S 2n and switching elements Q middle. In an alternative exemplary embodiment, the gate driver 400 may include a flexible printed circuit (“FPC”) mounted on the liquid crystal panel assembly 300 , or mounted in a thin film package (“TCP”) attached to the liquid crystal panel assembly 300 At least one integrated circuit ("IC") chip on the film. Alternatively, the gate driver 400 may be mounted on a separate printed circuit board (not shown).
例如,存储信号发生器700包括安排在液晶面板组件300的相对侧和与第一门驱动电路400a和第二门驱动电路400b相邻的第一存储信号生成电路700a和第二存储信号生成电路700b,但不局限于此。For example, the storage signal generator 700 includes a first storage signal generating circuit 700a and a second storage signal generating circuit 700b arranged on opposite sides of the liquid crystal panel assembly 300 and adjacent to the first gate driving circuit 400a and the second gate driving circuit 400b , but not limited to this.
第一存储信号生成电路700a与奇数号存储电极线S1,S3,...,S2n-1和偶数号正常门线G2,G4,...,G2n连接,并将具有高电平电压和低电平电压的多个存储信号施加在存储电极线S1,S3,...,S2n-1上。The first storage signal generating circuit 700a is connected to odd-numbered storage electrode lines S 1 , S 3 , ..., S 2n-1 and even-numbered normal gate lines G 2 , G 4 , ..., G 2n , and will have A plurality of storage signals of high-level voltage and low-level voltage are applied to storage electrode lines S 1 , S 3 , . . . , S 2n-1 .
第二存储信号生成电路700b与偶数号存储电极线S2,S4,...,S和除第1正常门线G1之外的奇数号正常门线G3,G5,...,G2n-1和附加门线Gd连接,并将具有高电平电压和低电平电压的多个存储信号施加在存储电极线S2,S4,...,S2n上。The second storage signal generating circuit 700b is connected to the even-numbered storage electrode lines S 2 , S 4 , ..., S and the odd-numbered normal gate lines G 3 , G 5 , ... except for the first normal gate line G 1 , G 2n-1 is connected to the additional gate line Gd , and a plurality of storage signals with high-level voltage and low-level voltage are applied to the storage electrode lines S 2 , S 4 , . . . , S 2n .
在本发明的一个可替代示范性实施例中,可以不将来自与门驱动器400连接的附加门线Gd的信号供应给存储信号发生器700。更确切地说,可以将例如来自像信号控制器600或分立信号发生器(未示出)那样的分立单元的信号供应给存储信号发生器700,但不局限于此。在这种情况下,如上所述,在液晶面板组件300上可以不形成附加门线Gd。In an alternative exemplary embodiment of the present invention, the signal from the additional gate line Gd connected to the gate driver 400 may not be supplied to the storage signal generator 700 . More precisely, the storage signal generator 700 may be supplied with signals from, for example, a discrete unit like the signal controller 600 or a discrete signal generator (not shown), but is not limited thereto. In this case, as described above, the additional gate line G d may not be formed on the liquid crystal panel assembly 300 .
在本发明的一个示范性实施例中,存储信号发生器700与多条信号线G1-G2n、Gd、D1-Dm和S1-S2n和开关元件Q一起集成到液晶面板组件300中。在可替代示范性实施例中,存储信号发生器700可以包括安装在液晶面板组件300上,或安装在附在液晶面板组件300上的TCP中的FPC薄膜上的至少一个IC芯片。可替代地,存储信号发生器700可以安装在分立印刷电路板(未示出)上。In an exemplary embodiment of the present invention, the storage signal generator 700 is integrated into the liquid crystal panel together with a plurality of signal lines G 1 -G 2n , G d , D 1 -D m and S 1 -S 2n and switching elements Q Component 300. In an alternative exemplary embodiment, the memory signal generator 700 may include at least one IC chip mounted on the liquid crystal panel assembly 300 , or mounted on an FPC film in TCP attached to the liquid crystal panel assembly 300 . Alternatively, the memory signal generator 700 may be mounted on a separate printed circuit board (not shown).
数据驱动器500与面板组件300的多条数据线D1-Dm连接,将从灰度电压发生器800供应的灰度电压中选择的数据电压施加在多条数据线D1-Dm上。但是,当灰度电压发生器800只生成一些而不是全部灰度电压时,数据驱动器500可以划分参考灰度电压,以便从灰度电压中生成数据电压。The data driver 500 is connected to the plurality of data lines D1 - Dm of the panel assembly 300, and applies a data voltage selected from gray voltages supplied from the gray voltage generator 800 to the plurality of data lines D1 - Dm . However, when the gray voltage generator 800 generates only some but not all of the gray voltages, the data driver 500 may divide the reference gray voltages to generate data voltages from the gray voltages.
信号控制器600控制门驱动器400、数据驱动器500和存储信号发生器700。The signal controller 600 controls the gate driver 400 , the data driver 500 and the storage signal generator 700 .
在一个示范性实施例中,数据驱动器500、信号控制器600和灰度电压发生器800可以包括安装在液晶面板组件300上或安装在附在液晶面板组件300上的TCP中的FPC薄膜上的至少一个IC芯片。可替代地,数据驱动器500、信号控制器600和灰度电压发生器800的至少一个可以与多条信号线G1-G2n、Gd、D1-Dm和S1-S2n和开关元件Q一起集成到液晶面板组件300中。在又一个可替代示范性实施例中,数据驱动器500、信号控制器600和灰度电压发生器800的每一个可以集成到单个IC芯片中,但数据驱动器500、信号控制器600和灰度电压发生器800的至少一个,或数据驱动器500、信号控制器600和灰度电压发生器800的至少一个中的至少一个电路元件可以位于单个IC芯片的外部。In an exemplary embodiment, the data driver 500, the signal controller 600, and the grayscale voltage generator 800 may include an FPC film installed on the liquid crystal panel assembly 300 or a TCP attached to the liquid crystal panel assembly 300. At least one IC chip. Alternatively, at least one of the data driver 500, the signal controller 600, and the grayscale voltage generator 800 may communicate with a plurality of signal lines G 1 -G 2n , G d , D 1 -D m , and S 1 -S 2n and switches The elements Q are integrated into the liquid crystal panel assembly 300 together. In yet another alternative exemplary embodiment, each of the data driver 500, the signal controller 600 and the gray voltage generator 800 may be integrated into a single IC chip, but the data driver 500, the signal controller 600 and the gray voltage At least one of the generator 800, or at least one circuit element of at least one of the data driver 500, the signal controller 600, and the gray voltage generator 800 may be located outside a single IC chip.
仍然参照图1和2,现在进一步详细描述液晶显示器的操作。Still referring to FIGS. 1 and 2, the operation of the liquid crystal display will now be described in further detail.
信号控制器600接收输入图像信号R、G和B和来自外部图形控制器(未示出)的控制输入图像信号R、G和B的多个输入控制信号。输入图像信号R、G和B包含像素PX的亮度信息,和亮度具有预定个数的灰度值,例如,1024(=210)、256(=28)或64(=26)个灰度值,但不局限于这些。The signal controller 600 receives input image signals R, G, and B and a plurality of input control signals controlling the input image signals R, G, and B from an external graphic controller (not shown). The input image signals R, G, and B contain luminance information of the pixel PX, and the luminance has a predetermined number of grayscale values, for example, 1024 (=2 10 ), 256 (=2 8 ) or 64 (=2 6 ) grayscales degree values, but are not limited to these.
例如,多个输入控制信号包括垂直同步信号Vsync、水平同步信号Hsync、主时钟信号MCLK和数据使能信号DE,但不局限于这些。For example, the plurality of input control signals include a vertical sync signal Vsync, a horizontal sync signal Hsync, a master clock signal MCLK, and a data enable signal DE, but are not limited thereto.
信号控制器600根据输入控制信号(未示出)和输入图像信号R、G和B处理输入图像信号R、G和B,并且,按照液晶面板组件300的操作条件,生成门控制信号CONT1、数据控制信号CONT2和存储控制信号CONT3,将门控制信号CONT1施加在门驱动器400上,将数据控制信号CONT2和数字图像信号DAT施加在数据驱动器500上,并将存储控制信号CONT3施加在存储信号发生器700上。The signal controller 600 processes the input image signals R, G, and B according to an input control signal (not shown) and the input image signals R, G, and B, and, according to the operating conditions of the liquid crystal panel assembly 300, generates a gate control signal CONT1, data The control signal CONT2 and the storage control signal CONT3 apply the gate control signal CONT1 to the gate driver 400, apply the data control signal CONT2 and the digital image signal DAT to the data driver 500, and apply the storage control signal CONT3 to the storage signal generator 700 superior.
门控制信号CONT1包括确定开门电压Von的开始的第一扫描开始信号STV1(未示出)和第二扫描开始信号STV2(未示出)和控制开门电压Von的输出周期的至少一个时钟信号(未示出)。在一个示范性实施例中,第一扫描开始信号STV1施加在第一门驱动电路400a上,而第二扫描开始信号STV2施加在第二门驱动电路400b上。在本发明的可替代示范性实施例中,第一扫描开始信号STV1可以施加在第二门驱动电路400b上,而第二扫描开始信号STV2施加在第一门驱动电路400a上。The gate control signal CONT1 includes a first scan start signal STV1 (not shown) and a second scan start signal STV2 (not shown) that determine the start of the gate open voltage Von and at least one clock signal (not shown) that controls the output period of the gate open voltage Von. Shows). In an exemplary embodiment, the first scan start signal STV1 is applied to the first gate driving circuit 400a, and the second scan start signal STV2 is applied to the second gate driving circuit 400b. In an alternative exemplary embodiment of the present invention, the first scan start signal STV1 may be applied to the second gate driving circuit 400b, and the second scan start signal STV2 may be applied to the first gate driving circuit 400a.
门控制信号CONT1可以进一步包括限制开门电压Von的时间周期的输出使能信号OE(未示出)。The gate control signal CONT1 may further include an output enable signal OE (not shown) limiting a time period of the gate opening voltage Von.
数据控制信号CONT2包括确定像素PX的各行的数据传送的开始的水平同步开始信号STH(未示出)、将数据电压施加在多条数据线D1-Dm上的装载信号LOAD(未示出)和数据时钟信号HCLK(未示出)。数据控制信号CONT2可以进一步包括反转数据电压相对于公用电压Vcom的极性的反转信号RVS(未示出)。The data control signal CONT2 includes a horizontal synchronization start signal STH (not shown) for determining the start of data transfer of each row of pixels PX, a load signal LOAD (not shown) for applying data voltages to a plurality of data lines D1 - Dm ) and data clock signal HCLK (not shown). The data control signal CONT2 may further include an inversion signal RVS (not shown) that inverts the polarity of the data voltage with respect to the common voltage Vcom.
响应来自信号控制器600的数据控制信号CONT2,数据驱动器500从信号控制器600接收像素PX的各行的数字图像信号DAT,将数字图像信号DAT转换成从灰度电压中选择的模块数据电压,并将模块数据电压施加在多条数据线D1-Dm上。In response to the data control signal CONT2 from the signal controller 600, the data driver 500 receives the digital image signal DAT of each row of the pixels PX from the signal controller 600, converts the digital image signal DAT into a block data voltage selected from grayscale voltages, and The module data voltage is applied to multiple data lines D 1 -D m .
门驱动器400响应来自信号控制器600的门控制信号CONT1,将开门电压Von施加在门线的当前行,例如,第i行的相应正常门线上,从而导通与第i行的各自正常门线连接的相关开关元件Q。因此,模拟数据电压施加在数据线D1-Dm上,然后通过导通开关晶体管Q供应给第i行的各个像素PX,以便通过模拟数据电压对第i行的像素PX中的液晶电容器Clc和存储电容器Cst充电。The gate driver 400 responds to the gate control signal CONT1 from the signal controller 600, and applies the gate-opening voltage Von to the current row of gate lines, for example, the corresponding normal gate lines of the i-th row, thereby turning on the respective normal gate lines of the i-th row. The associated switching elements Q are connected by wires. Therefore, the analog data voltage is applied to the data lines D1 - Dm , and then supplied to each pixel PX in the i-th row by turning on the switching transistor Q, so that the liquid crystal capacitor Clc in the pixel PX in the i-th row is charged by the analog data voltage. and the storage capacitor Cst is charged.
在示范性实施例中,附加门线Gd未与开关元件Q连接。In an exemplary embodiment, the additional gate line Gd is not connected to the switching element Q. Referring to FIG.
施加在各个像素PX上的模拟数据电压与公用电压Vcom之差表现成像素PX的液晶电容器Clc两端的电压差,称为像素电压。液晶电容器Clc中液晶分子随像素电压的幅度取向,液晶分子的取向决定穿过液晶层3的光线的极性。极化器(未示出)将光极化度转换成光透射率,以便给定像素PX具有与施加在像素PX上的模拟数据电压,例如,像素电压的电平成正比的亮度。The difference between the analog data voltage applied to each pixel PX and the common voltage Vcom is expressed as a voltage difference across the liquid crystal capacitor Clc of the pixel PX, which is referred to as a pixel voltage. The liquid crystal molecules in the liquid crystal capacitor Clc are oriented according to the magnitude of the pixel voltage, and the orientation of the liquid crystal molecules determines the polarity of light passing through the liquid crystal layer 3 . A polarizer (not shown) converts light polarization into light transmittance so that a given pixel PX has a brightness proportional to the level of an analog data voltage, eg, pixel voltage, applied to the pixel PX.
在等于水平同步信号Hsync和数据使能信号DE的一个周期的水平周期(“1H”)之后,数据驱动器500将数据电压施加在第(i+1)行,例如,随后行的像素PX上,而门驱动器400将关门信号Voff施加在第i行并将开门信号Von施加在像素的第(i+1)行上。其结果是,第i行的开关元件Q关断,使第i行的像素电极191浮置。After a horizontal period (“1H”) equal to one period of the horizontal synchronization signal Hsync and the data enable signal DE, the data driver 500 applies the data voltage to the pixel PX of the (i+1)th row, for example, the subsequent row, And the gate driver 400 applies the gate closing signal Voff to the ith row and applies the gate opening signal Von to the (i+1)th row of pixels. As a result, the switching element Q in the i-th row is turned off, and the pixel electrode 191 in the i-th row is floated.
存储信号发生器700根据存储控制信号CONT3和施加在第(i+1)门线Gi+1上的门信号的电压变化,改变施加在第i存储电极线Si上的存储信号的电压电平。因此,与存储电容器Cst的一端连接的像素电极191的电压随与存储电容器Cst的另一端连接的存储电极线Si的电压变化而变。The storage signal generator 700 changes the voltage level of the storage signal applied to the i-th storage electrode line S i according to the storage control signal CONT3 and the voltage change of the gate signal applied to the (i+1)th gate line G i+1 . flat. Therefore, the voltage of the pixel electrode 191 connected to one end of the storage capacitor Cst varies with the voltage of the storage electrode line S i connected to the other end of the storage capacitor Cst.
通过对所有随后像素行重复如上所述的过程,LCD将显示出单帧的图像。当随后的帧开始时,控制施加在数据驱动器500上的反转信号RVS(未示出),以便反转模拟数据电压的极性。换句话说,给定帧的数据电压的极性是相同的,但相对于前一帧的数据电压的极性反转了,称此为“帧反转”。By repeating the process described above for all subsequent rows of pixels, the LCD will display a single frame of image. When the subsequent frame starts, an inversion signal RVS (not shown) applied to the data driver 500 is controlled so as to invert the polarity of the analog data voltage. In other words, the polarity of the data voltages for a given frame is the same, but reversed with respect to the data voltages of the previous frame, referred to as "frame inversion".
另外,施加在一行的像素PX上的数据电压的极性可能近似相同,而施加在前相邻行和在后相邻行的像素PX上的数据电压的极性是反转的(例如,行反转)。In addition, the polarities of the data voltages applied to the pixels PX of one row may be approximately the same, while the polarities of the data voltages applied to the pixels PX of the previous and subsequent adjacent rows are reversed (for example, the row invert).
在进行帧反转和/或行反转的本发明示范性实施例中,施加在一行的像素PX上的所有数据电压的极性随每个相继行正负交替。并且,当通过正极性的数据电压对像素电极191充电时,施加在多条存储电极线S1-S2n上的存储信号从低电平电压改变成高电平电压。相反,当通过负极性的数据电压对像素电极191充电时,存储信号从高电平电压改变成低电平电压。其结果是,如果通过正极性的正数据电压对像素电极191充电,则像素电极191的电压升高,而如果通过负数据电压对像素电极191充电,则像素电极191的电压下降。其结果是,像素电极191的电压电平的范围增大了,从而大于作为数据电压基础的灰度电压的范围。其结果是,不用增大灰度电压的范围就可以增大亮度范围。In an exemplary embodiment of the present invention performing frame inversion and/or row inversion, the polarities of all data voltages applied to pixels PX of one row alternate positive and negative with each successive row. Also, when the pixel electrode 191 is charged by the positive data voltage, the storage signal applied to the plurality of storage electrode lines S 1 -S 2n changes from a low-level voltage to a high-level voltage. On the contrary, when the pixel electrode 191 is charged by the data voltage of negative polarity, the storage signal is changed from a high-level voltage to a low-level voltage. As a result, when the pixel electrode 191 is charged with a positive data voltage of positive polarity, the voltage of the pixel electrode 191 increases, and when the pixel electrode 191 is charged with a negative data voltage, the voltage of the pixel electrode 191 decreases. As a result, the range of the voltage level of the pixel electrode 191 is increased to be larger than the range of the gray voltage on which the data voltage is based. As a result, the luminance range can be increased without increasing the range of gray scale voltages.
第一存储信号生成电路700a和第二存储信号生成电路700b包括与多条存储电极线S1-S2n连接的多个信号生成电路710(图3)。现在参照图3和4进一步详细描述信号生成电路710的例子。The first storage signal generation circuit 700 a and the second storage signal generation circuit 700 b include a plurality of signal generation circuits 710 ( FIG. 3 ) connected to a plurality of storage electrode lines S 1 -S 2 n . An example of the signal generating circuit 710 is now described in further detail with reference to FIGS. 3 and 4 .
图3是根据本发明一个示范性实施例的信号生成电路的示意性电路图,而图4是根据图3中的本发明示范性实施例的信号生成电路的信号时序图。FIG. 3 is a schematic circuit diagram of a signal generating circuit according to an exemplary embodiment of the present invention, and FIG. 4 is a signal timing diagram of the signal generating circuit according to the exemplary embodiment of the present invention in FIG. 3 .
参照图3,信号生成电路710包括输入端IP和输出端OP。在第i信号生成电路710中,例如,输入端IP与供给第(i+1)门信号gi+1(下文称为“输入信号”)的第(i+1)门线Gi+1连接(图1),而输出端OP与输出第i存储信号Vsl的第i存储电极线Si连接。类似地,在第(i+1)信号生成电路710中,例如,输入端IP与供给第(i+2)门信号gi+2(未示出)作为输入信号的第(i+2)门线Gi+2连接,而输出端OP与输出第(i+1)存储信号Vsl+1(未示出)的第(i+1)存储电极线Si+1连接。Referring to FIG. 3 , the signal generating circuit 710 includes an input terminal IP and an output terminal OP. In the i-th signal generation circuit 710, for example, the input terminal IP and the (i+1)th gate line G i+1 supplying the (i+1)th gate signal g i+1 (hereinafter referred to as "input signal") is connected (FIG. 1), and the output terminal OP is connected to the i-th storage electrode line S i that outputs the i-th storage signal V sl . Similarly, in the (i+1)th signal generating circuit 710, for example, the input terminal IP is connected to the (i+2)th gate signal g i+2 (not shown) supplied as the input signal. The gate line G i+2 is connected, and the output terminal OP is connected to the (i+1)th storage electrode line S i+1 outputting the (i+1)th storage signal V sl+1 (not shown).
将来自信号控制器600(图1)的存储控制信号CONT3的第一时钟信号CK1、第二时钟信号CK1B和第三时钟信号CK2供应给信号生成电路710,并且将来自信号控制器600或外部设备(未示出)的高压AVDD和低压AVSS供应给信号生成电路710。The first clock signal CK1, the second clock signal CK1B, and the third clock signal CK2 of the storage control signal CONT3 from the signal controller 600 (FIG. 1) are supplied to the signal generation circuit 710, and the signal controller 600 or an external device High voltage AVDD and low voltage AVSS (not shown) are supplied to the signal generation circuit 710 .
如图4所示,第一时钟信号CK1、第二时钟信号CK1B和第三时钟信号CK2的周期可以是大约2H,它们的占空比可以在大约50%,但不局限于此。第一时钟信号CK1和第二时钟信号CK1B具有大约1800的相差和相互反相。相反,第二时钟信号CK1B和第三时钟信号CK2具有实际上相同的相位。另外,如图4所示,在每个各个随后帧中第一时钟信号CK1、第二时钟信号CK1B和第三时钟信号CK2的每个相位是反相的。As shown in FIG. 4 , the periods of the first clock signal CK1 , the second clock signal CK1B and the third clock signal CK2 may be about 2H, and their duty ratios may be about 50%, but not limited thereto. The first clock signal CK1 and the second clock signal CK1B have a phase difference of about 180° and are mutually inverse. In contrast, the second clock signal CK1B and the third clock signal CK2 have substantially the same phase. In addition, as shown in FIG. 4, each phase of the first clock signal CK1, the second clock signal CK1B, and the third clock signal CK2 is inverted in each respective subsequent frame.
第一时钟信号CK1和第二时钟信号CK1B可以具有例如大约15V的第一高电平电压Vh1,并且例如大约0V的第一低电平电压Vl1。第三时钟信号CK2可以具有例如大约5V的第二高电平电压Vh2,并且例如大约0V的第二低电平电压Vl2。高压AVDD可以是例如大约5V,并可以大约等于第三时钟信号CK2的第二高电平电压Vh2。低压AVSS可以是例如大约0V,并可以大约等于第三时钟信号CK2的第二低电平电压Vl2。The first clock signal CK1 and the second clock signal CK1B may have a first high-level voltage Vh1 of, for example, about 15V, and a first low-level voltage Vl1 of, for example, about 0V. The third clock signal CK2 may have a second high-level voltage Vh2 of, for example, about 5V, and a second low-level voltage Vl2 of, for example, about 0V. The high voltage AVDD may be, for example, about 5V, and may be about equal to the second high level voltage Vh2 of the third clock signal CK2. The low voltage AVSS may be, for example, about 0V, and may be about equal to the second low level voltage V12 of the third clock signal CK2.
信号生成电路710包括分别含有控制端、输入端和输出端的第一到第五晶体管Tr1-Tr5和第一电容器C1和第二电容器C2。The signal generation circuit 710 includes first to fifth transistors Tr1 - Tr5 including a control terminal, an input terminal and an output terminal, respectively, and first and second capacitors C1 and C2 .
第一晶体管Tr1的控制端与输入端IP连接,晶体管Tr1的输入端与第三时钟信号CK2连接,而晶体管Tr1的输出端与输出端OP连接。The control terminal of the first transistor Tr1 is connected to the input terminal IP, the input terminal of the transistor Tr1 is connected to the third clock signal CK2 , and the output terminal of the transistor Tr1 is connected to the output terminal OP.
第二晶体管Tr2和第三晶体管Tr3的控制端与输入端IP连接,而第二晶体管Tr2和第三晶体管Tr3的输入端分别与第一时钟信号CK1和第二时钟信号CK1B连接。The control terminals of the second transistor Tr2 and the third transistor Tr3 are connected to the input terminal IP, and the input terminals of the second transistor Tr2 and the third transistor Tr3 are respectively connected to the first clock signal CK1 and the second clock signal CK1B.
第四晶体管Tr4和第五晶体管Tr5的控制端分别与第二晶体管Tr2和第三晶体管Tr3的输出端连接,而第四晶体管Tr4和第五晶体管Tr5的输入端分别与低压AVSS和高压AVDD连接。The control terminals of the fourth transistor Tr4 and the fifth transistor Tr5 are connected to the output terminals of the second transistor Tr2 and the third transistor Tr3 respectively, and the input terminals of the fourth transistor Tr4 and the fifth transistor Tr5 are respectively connected to the low voltage AVSS and the high voltage AVDD.
第一电容器C1和第二电容器C2分别连接在第四晶体管Tr4和第五晶体管Tr5的控制端与低压AVSS和高压AVDD之间。The first capacitor C1 and the second capacitor C2 are respectively connected between the control terminals of the fourth transistor Tr4 and the fifth transistor Tr5 and the low voltage AVSS and the high voltage AVDD.
在一个示范性实施例中,第一到第五晶体管Tr1-Tr5分别由非晶硅(“a-Si”)或多晶硅(“p-Si”)TFT形成。In one exemplary embodiment, the first to fifth transistors Tr1 - Tr5 are formed of amorphous silicon ("a-Si") or polysilicon ("p-Si") TFTs, respectively.
现在进一步详细描述信号生成电路710的操作。The operation of the signal generating circuit 710 is now described in further detail.
再次参照图4,一般说来,开门电压Von在例如大约1H(但不局限于此)的预定重叠时间周期内施加在两条相邻门线的每一条上。其结果是,在大约1H内利用施加在前一行的像素上的数据电压,然后在其余1H内利用数据电压对给定行的所有像素PX充电以显示图像。Referring again to FIG. 4 , in general, the gate-on voltage Von is applied to each of two adjacent gate lines within a predetermined overlapping time period of, for example, about 1H (but not limited thereto). As a result, an image is displayed by charging all the pixels PX of a given row with the data voltage applied to the pixels of the previous row for about 1H, and then with the data voltage for the remaining 1H.
现在,参照图3和4进一步描述第i信号生成电路710。Now, the i-th signal generating circuit 710 is further described with reference to FIGS. 3 and 4 .
当输入信号(例如,施加在第(i+1)门线Gi+1上的门信号gi+1)改变成开门电压Von时,第一、第二和第三晶体管Tr1-Tr3分别导通。导通的第一晶体管Tr1将第三时钟信号CK2传送到输出端OP。其结果是,第i存储信号Vsi处在第三时钟信号CK2的第二低电平电压Vl2上。导通的第二晶体管Tr2将第一时钟信号CK1传送到第四晶体管Tr4的控制端,而导通的第三晶体管Tr3将第二时钟信号CK1B传送到第五晶体管Tr5的控制端。When the input signal (for example, the gate signal g i+1 applied to the (i+1)th gate line G i+ 1 ) changes to the gate-opening voltage Von, the first, second and third transistors Tr1-Tr3 are turned on respectively. Pass. The turned-on first transistor Tr1 transmits the third clock signal CK2 to the output terminal OP. As a result, the i -th storage signal Vsi is at the second low-level voltage V12 of the third clock signal CK2. The turned-on second transistor Tr2 transmits the first clock signal CK1 to the control terminal of the fourth transistor Tr4, and the turned-on third transistor Tr3 transmits the second clock signal CK1B to the control terminal of the fifth transistor Tr5.
由于第一和第二时钟信号CK1和CK1B存在反相关系,第四晶体管Tr4和第五晶体管Tr5在给定时间被反向偏置。例如,当第四晶体管Tr4导通时,第五晶体管Tr5关断,相反,当第四晶体管Tr4关断时,第五晶体管Tr5导通。并且,当第四晶体管Tr4导通和第五晶体管Tr5关断时,低压AVSS传送到输出端OP,而当第四晶体管Tr4关断和第五晶体管Tr5导通时,高压AVDD传送到输出端OP。Since the first and second clock signals CK1 and CK1B have an inversion relationship, the fourth transistor Tr4 and the fifth transistor Tr5 are reverse-biased at a given time. For example, when the fourth transistor Tr4 is turned on, the fifth transistor Tr5 is turned off, and conversely, when the fourth transistor Tr4 is turned off, the fifth transistor Tr5 is turned on. And, when the fourth transistor Tr4 is turned on and the fifth transistor Tr5 is turned off, the low voltage AVSS is transmitted to the output terminal OP, and when the fourth transistor Tr4 is turned off and the fifth transistor Tr5 is turned on, the high voltage AVDD is transmitted to the output terminal OP .
如图4所示,门信号gi+1在例如大约2H的间隔内处在开门电压Von上。并且,大约1H的第一周期用第一周期T1表示,而大约1H的第二周期用随后周期T2表示。As shown in FIG. 4, the gate signal gi +1 is at the gate-on voltage Von for an interval of, for example, about 2H. And, a first period of about 1H is represented by a first period T1, and a second period of about 1H is represented by a subsequent period T2.
第一时钟信号CK1在第一周期T1内处在第一高电平电压Vh1上,而第二时钟信号和第三时钟信号CK1B和CK2分别处在第一和第二低电平电压Vl1和vl2上,并且将低压AVSS供应给通过晶体管Tr1传给第三时钟信号CK2的第二低电平电压Vl2的输出端OP。其结果是,存储信号Vsi保持幅度等于第二低电平电压Vl2和低压AVSS的幅度的低电平存储信号电压V-。在第一周期T1期间,将第一时钟信号CK1的第一高电平电压Vh1与低压AVSS之间的电压差充电到电容器C1,而将第二时钟信号CK1B的第一低电平电压Vl1与高压AVDD之间的电压差充电到电容器C2。The first clock signal CK1 is at the first high-level voltage Vh1 in the first period T1, and the second clock signal and the third clock signal CK1B and CK2 are at the first and second low-level voltages Vl1 and vl2 respectively. , and supply the low voltage AVSS to the output terminal OP of the second low level voltage Vl2 transmitted to the third clock signal CK2 through the transistor Tr1. As a result, the storage signal Vsi maintains the low-level storage signal voltage V- having a magnitude equal to the magnitude of the second low-level voltage V12 and the low voltage AVSS. During the first period T1, the voltage difference between the first high-level voltage Vh1 of the first clock signal CK1 and the low voltage AVSS is charged to the capacitor C1, and the first low-level voltage Vl1 of the second clock signal CK1B and The voltage difference between high voltage AVDD charges capacitor C2.
在周期T2期间,第一时钟信号CK1保持在第一低电平电压Vl1上,而第二和第三时钟信号CK1B和CK2分别保持在第一和第二高电平电压Vh1和Vh2上,从而第五晶体管Tr5导通而第四晶体管Tr4关断。During the period T2, the first clock signal CK1 is kept at the first low-level voltage Vl1, and the second and third clock signals CK1B and CK2 are kept at the first and second high-level voltages Vh1 and Vh2, respectively, thereby The fifth transistor Tr5 is turned on and the fourth transistor Tr4 is turned off.
其结果是,将通过导通的第一晶体管Tr1传送的第三时钟信号CK2的第二高电平电压Vh2供应给输出端OP,并且存储信号Vsi的状态从低电平存储信号电压V-改变成幅度等于第二高电平电压Vh2的幅度的高电平存储信号电压V+。另外,将幅度等于高电平存储信号电压V+的幅度、通过导通第五晶体管Tr5施加的高压AVDD供应给输出端OP。As a result, the second high-level voltage Vh2 of the third clock signal CK2 transmitted through the turned-on first transistor Tr1 is supplied to the output terminal OP, and the state of the storage signal V si is stored from the low-level storage signal voltage V- Changes to the high-level storage signal voltage V+ having a magnitude equal to that of the second high-level voltage Vh2. In addition, a high voltage AVDD having an amplitude equal to the amplitude of the high-level storage signal voltage V+ applied by turning on the fifth transistor Tr5 is supplied to the output terminal OP.
由于充电到电容器C1的电压近似与第一时钟信号CK1的第一低电平电压Vl1与低压AVSS之间的电压差相同,当第一时钟信号CK1的第一低电平电压Vl1和低压AVSS变成近似相同时,电容器C1放电。由于充电到电容器C2的电压基于第二时钟信号CK1B的第一高电平电压Vh1与高压AVDD之间的电压差,当如上所述,第一高电平电压Vh1和高压AVDD相互不同时,充电到电容器C2的电压不等于0V,其中,第二时钟信号CK1B的第一高电平电压Vh1是大约15V和高压AVDD是大约5V。因此,充电到电容器C2的电压是大约10V。Since the voltage charged to the capacitor C1 is approximately the same as the voltage difference between the first low-level voltage Vl1 of the first clock signal CK1 and the low voltage AVSS, when the first low-level voltage Vl1 of the first clock signal CK1 and the low voltage AVSS become into approximately the same, capacitor C1 discharges. Since the voltage charged to the capacitor C2 is based on the voltage difference between the first high-level voltage Vh1 of the second clock signal CK1B and the high voltage AVDD, when the first high-level voltage Vh1 and the high voltage AVDD are different from each other as described above, the charging The voltage to the capacitor C2 is not equal to 0V, where the first high level voltage Vh1 of the second clock signal CK1B is about 15V and the high voltage AVDD is about 5V. Therefore, the voltage charged to the capacitor C2 is about 10V.
当如图所示,门信号gi+1的第i+1级在经过了周期T2之后从开门电压Von改变成关门电压Voff时,第一到第三晶体管Tr1-Tr3分别关断。其结果是,第一晶体管Tr1与输出端OP之间的电连接分开,以及第四和第五晶体管Tr4和Tr5的控制端与输出端OP之间的电连接也分别分开。When the i+1th stage of the gate signal g i+1 changes from the gate-on voltage Von to the gate-off voltage Voff after a period T2 as shown in the figure, the first to third transistors Tr1-Tr3 are respectively turned off. As a result, the electrical connection between the first transistor Tr1 and the output terminal OP is separated, and the electrical connections between the control terminals of the fourth and fifth transistors Tr4 and Tr5 and the output terminal OP are also separated, respectively.
由于未充电到电容器C1,第四晶体管Tr4保持在关断状态。但是,第二时钟信号CK1B的第一高电平电压Vh1与高压AVDD之间的电压已经充电到电容器C2。因此,当电容器C2的充电电压大于第五晶体管Tr5的阈电压时,晶体管Tr5保持在导通状态。其结果是,将高压AVDD作为存储信号Vsi提供给输出端OP。于是,存储信号Vsi保持高电平存储信号电压V+。Since the capacitor C1 is not charged, the fourth transistor Tr4 remains in an off state. However, the voltage between the first high level voltage Vh1 of the second clock signal CK1B and the high voltage AVDD has been charged to the capacitor C2. Therefore, when the charging voltage of the capacitor C2 is greater than the threshold voltage of the fifth transistor Tr5, the transistor Tr5 is kept in the on state. As a result, the high voltage AVDD is supplied to the output terminal OP as the storage signal Vsi. Thus, the storage signal V si maintains the high-level storage signal voltage V+.
接着,参照图4进一步详细描述第(i+1)信号生成电路710的操作。Next, the operation of the (i+1)th signal generation circuit 710 is described in further detail with reference to FIG. 4 .
当具有开门电压Von的第(i+2)门信号gi+2施加在第(i+1)信号生成电路710(未示出)上时,第(i+1)信号生成电路710开始工作。When the (i+2)th gate signal g i+2 having the gate opening voltage Von is applied to the (i+1)th signal generating circuit 710 (not shown), the (i+1)th signal generating circuit 710 starts to work .
如图4所示,当第(i+2)门信号gi+2切换成开门电压Von时,第一、第二和第三时钟信号CK1、CK1B和CK2的状态分别反转,而第(i+1)门信号gi+1处在开门电压Von上。As shown in Figure 4, when the (i+2)th gate signal g i+2 is switched to the gate-on voltage Von, the states of the first, second and third clock signals CK1, CK1B and CK2 are reversed respectively, and the ( i+1) The gate signal g i+1 is at the gate opening voltage Von.
第(i+2)门信号gi+2的前一个开门电压周期T1的操作近似与第(i+1)门信号gi+1的后一个开门电压周期T2的操作相同,致使第一、第三和第五晶体管Tr1、Tr3和Tr5分别导通。于是,第三时钟信号CK2的第二高电平电压Vh2和高压AVDD施加在输出端OP上。其结果是,存储信号Vsi+1处在高电平存储信号电压V+上。The operation of the first gate-opening voltage period T1 of the (i+2)th gate signal g i+2 is approximately the same as the operation of the next gate-opening voltage period T2 of the (i+1)th gate signal g i+1 , so that the first, The third and fifth transistors Tr1, Tr3 and Tr5 are respectively turned on. Then, the second high level voltage Vh2 of the third clock signal CK2 and the high voltage AVDD are applied to the output terminal OP. As a result, the storage signal V si+1 is at the high level storage signal voltage V+.
类似地,第(i+2)门信号gi+2的开门电压周期T2的操作近似与第(i+1)门信号gi+1的前一个开门电压周期T1的操作相同,致使第一、第二和第四晶体管Tr1、Tr2和Tr4分别导通。于是,第三时钟信号CK2的第二低电平电压Vl2和低压AVSS施加在输出端OP上。其结果是,存储信号Vsi+1从高电平存储信号电压V+改变成低电平存储信号电压V-。Similarly, the operation of the gate opening voltage period T2 of the (i+2)th gate signal g i+2 is approximately the same as the operation of the previous gate opening voltage period T1 of the (i+1)th gate signal g i + 1 , causing the first , the second and fourth transistors Tr1, Tr2 and Tr4 are turned on respectively. Then, the second low level voltage V12 and the low voltage AVSS of the third clock signal CK2 are applied to the output terminal OP. As a result, the storage signal V si+1 changes from the high-level storage signal voltage V+ to the low-level storage signal voltage V-.
如上所述,第一晶体管Tr1可以在输入信号保持开门电压Von的同时施加第三时钟信号CK2作为存储信号,并且当通过关门电压Voff将输出端OP与第一晶体管Tr1的输出端分开时,利用第一和第二电容器C1和C2使第二到第五晶体管Tr2-Tr5分别保持在存储信号的状态直到下一个帧。并且,第一晶体管Tr1可以将存储信号施加在相应存储电极线上,而第二到第五晶体管Tr2-Tr5分别保持存储信号。As described above, the first transistor Tr1 can apply the third clock signal CK2 as a storage signal while the input signal maintains the gate-on voltage Von, and when the output terminal OP is separated from the output terminal of the first transistor Tr1 by the gate-off voltage Voff, using The first and second capacitors C1 and C2 respectively maintain the second to fifth transistors Tr2-Tr5 in a state of storing signals until the next frame. Also, the first transistor Tr1 may apply a storage signal to a corresponding storage electrode line, and the second to fifth transistors Tr2-Tr5 maintain the storage signal, respectively.
在一个示范性实施例中,第一晶体管Tr1的尺寸分别比第二到第五晶体管Tr2-Tr5的尺寸大得多。如方程1给出的那样,像素电极电压Vp响应存储信号Vs的电压变化而变。In one exemplary embodiment, the size of the first transistor Tr1 is much larger than the sizes of the second to fifth transistors Tr2-Tr5, respectively. As given by Equation 1, the pixel electrode voltage Vp changes in response to the voltage change of the storage signal Vs.
Vp=VD+/-Δ=VD+/-Cst/(Cst+Clc)*[(V+)-(V-)] (方程1)Vp=V D +/-Δ=V D +/-C st /(C st +C lc )*[(V+)-(V-)] (equation 1)
其中:VD是数据电压;Δ是电压变化量;Clc和Cst分别代表存储和液晶电容器的电容;V+代表存储信号Vs的高电平存储信号电压;以及V-代表存储信号Vs的低电平存储信号电压。Among them: V D is the data voltage; Δ is the amount of voltage change; C lc and C st represent the capacitance of the storage and liquid crystal capacitors, respectively; V+ represents the high-level storage signal voltage of the storage signal V s ; and V- represents the storage signal V s The low level storage signal voltage.
通过将存储信号Vs的电压变化量Δ加入数据电压VD中或从数据电压VD中减去存储信号Vs的电压变化量Δ,当利用正极性的数据电压对像素充电时,像素电极电压Vp增加了电压变化量Δ,相反,当利用负极性的数据电压对像素充电时,像素电极电压Vp减小了电压变化量Δ。其结果是,像素电压的电压变化量Δ通过使像素电极电压Vp增加或减小,使像素电压变成大于灰度电压的范围,致使所代表亮度的范围也增大。By adding the voltage variation Δ of the storage signal V s to the data voltage V D or subtracting the voltage variation Δ of the storage signal V s from the data voltage V D , when the pixel is charged with the positive data voltage, the pixel electrode The voltage Vp increases the voltage variation Δ, and conversely, when the pixel is charged with the data voltage of negative polarity, the pixel electrode voltage Vp decreases the voltage variation Δ. As a result, the pixel voltage voltage variation Δ increases or decreases the pixel electrode voltage Vp, so that the pixel voltage becomes larger than the range of the grayscale voltage, so that the range of the represented luminance is also increased.
并且,如上所述,由于公用电压固定在预定值上,与公用电压在高值和低值之间交替的现有技术的LCD相比,有效地降低了功耗。Also, as described above, since the common voltage is fixed at a predetermined value, power consumption is effectively reduced compared to the related art LCD in which the common voltage alternates between a high value and a low value.
因此,根据本发明的示范性实施例,公用电压固定在预定值上,和电平周期性变化的存储信号施加在存储电极线上,致使像素电极电压的范围增大。因此,代表灰度电压的电压的范围增加,从而使LCD的图像质量提高。Therefore, according to an exemplary embodiment of the present invention, the common voltage is fixed at a predetermined value, and a storage signal whose level changes periodically is applied to the storage electrode line, so that the range of the pixel electrode voltage is increased. Accordingly, the range of voltages representing gray scale voltages increases, thereby improving the image quality of the LCD.
并且,如上所述,由于公用电压恒定而降低了功耗。Also, as described above, power consumption is reduced due to the constant utility voltage.
在下文中,将参照图5-8B进一步描述本发明的另一个示范性实施例。Hereinafter, another exemplary embodiment of the present invention will be further described with reference to FIGS. 5-8B .
图5是根据本发明另一个示范性实施例的液晶显示器的方块图,而图6是根据图5中的本发明示范性实施例的存储信号生成电路的信号生成电路的示意性电路图。图7A和7B是根据图6中的本发明示范性实施例的信号生成电路的信号时序图。更具体地说,图7A是门驱动器的扫描方向是前向方向的情况下的例子,而图7B是门驱动器的扫描方向是后向方向的情况下的例子。图8A和8B是根据本发明一个可替代示范性实施例的信号生成电路的信号时序图。更具体地说,图BA是例示门驱动器的扫描方向是前向方向的情况下的信号时序的例子,而图8B是例示门驱动器的扫描方向是后向方向的情况下的信号时序的例子。5 is a block diagram of a liquid crystal display according to another exemplary embodiment of the present invention, and FIG. 6 is a schematic circuit diagram of a signal generating circuit of a storage signal generating circuit according to an exemplary embodiment of the present invention in FIG. 5 . 7A and 7B are signal timing diagrams of the signal generating circuit according to the exemplary embodiment of the present invention in FIG. 6 . More specifically, FIG. 7A is an example in the case where the scanning direction of the gate driver is the forward direction, and FIG. 7B is an example in the case where the scanning direction of the gate driver is the backward direction. 8A and 8B are signal timing diagrams of a signal generating circuit according to an alternative exemplary embodiment of the present invention. More specifically, FIG. BA is an example illustrating signal timing in the case where the scanning direction of the gate driver is the forward direction, and FIG. 8B is an example illustrating signal timing in the case where the scanning direction of the gate driver is the backward direction.
除了下面进一步详细描述的不同部分之外,根据如图5到8B所示的本发明示范性实施例的LCD近似与如图1到3所示的LCD相同。因此,用相同的标号标记执行相同或相似操作的元件,并且下面将省略对它们的任何重复描述。The LCD according to the exemplary embodiment of the present invention as shown in FIGS. 5 to 8B is approximately the same as the LCD shown in FIGS. 1 to 3 except for different parts described in further detail below. Therefore, elements performing the same or similar operations are marked with the same reference numerals, and any repeated description thereof will be omitted below.
根据如图5所示的本发明示范性实施例的液晶显示器包括液晶面板组件300a、门驱动器401、数据驱动器500、与数据驱动器500连接的灰度电压发生器800、存储信号发生器701和信号控制器601。The liquid crystal display according to the exemplary embodiment of the present invention as shown in FIG. controller 601 .
但是,与如图1所示的本发明示范性实施例不同,门驱动器401是多条正常门线G1-G2n的扫描方向随来自外部设备(未示出)的选择信号(未示出)而变的双向门驱动器。更具体地说,根据选择信号的状态,门驱动器401沿着例如从第1正常门线G1到最后正常门线G2n的前向方向,或相反,沿着例如从最后正常门线G2n到第1正常门线G1的后向方向,依次传送开门电压Von。在门驱动器401的双向驱动中,液晶显示器可以进一步包括选择开关(未示出),选择开关输出具有例如随输入到信号控制器601的用户选择而变的状态的选择信号,并且,除了如上面更详细描述的那样,分别施加在第一和第二门驱动电路401a和401b上的第一和第二扫描开始信号STV1和STV2(未示出)之外,信号控制器601还可以针对门控制信号CONT1a,分别输出附加第三和第四扫描开始信号STV3和STV4(未示出)。因此,当门驱动器410沿着前向方向扫描时,第一和第二扫描开始信号STV1和STV2可以分别施加在第一和第二门驱动电路401a和401b上,而当门驱动器410沿着后向方向扫描时,第三和第四扫描开始信号STV3和STV4可以分别施加在第一和第二门驱动电路401a和401b上。However, unlike the exemplary embodiment of the present invention shown in FIG. 1 , the gate driver 401 is a plurality of normal gate lines G 1 -G 2n in which the scanning direction follows a selection signal (not shown) from an external device (not shown). ) and change the bidirectional gate driver. More specifically, depending on the state of the selection signal, the gate driver 401 moves along, for example, a forward direction from the first normal gate line G1 to the last normal gate line G2n , or vice versa, along a direction such as from the last normal gate line G2n . To the backward direction of the first normal gate line G1 , the gate-on voltage Von is sequentially transmitted. In the bidirectional driving of the gate driver 401, the liquid crystal display may further include a selection switch (not shown), which outputs a selection signal having a state that changes, for example, with a user's selection input to the signal controller 601, and, in addition to the above As described in more detail, the signal controller 601 can also control the The signal CONT1a outputs additional third and fourth scanning start signals STV3 and STV4 (not shown), respectively. Therefore, when the gate driver 410 scans in the forward direction, the first and second scan start signals STV1 and STV2 can be applied to the first and second gate driver circuits 401a and 401b, respectively, and when the gate driver 410 scans in the backward direction When scanning in the direction, the third and fourth scan start signals STV3 and STV4 may be applied to the first and second gate driving circuits 401a and 401b, respectively.
根据示范性实施例的液晶显示器的存储信号发生器701的第一和第二存储信号生成电路701a和701b的每一个包括将存储信号传送到多条存储电极线S1-S2n的多个信号生成电路710a。如图6所示,多个信号生成电路710a的每个信号生成电路710a都与如图3所示的信号生成电路710类似,例如,信号生成电路710a包括输出端OP、第一到第五晶体管Tr1-Tr5和第一电容器C1和第二电容器C2。Each of the first and second storage signal generation circuits 701a and 701b of the storage signal generator 701 of the liquid crystal display according to an exemplary embodiment includes a plurality of signals for transmitting a storage signal to a plurality of storage electrode lines S 1 -S 2n Generate circuit 710a. As shown in FIG. 6, each signal generating circuit 710a of a plurality of signal generating circuits 710a is similar to the signal generating circuit 710 shown in FIG. 3, for example, the signal generating circuit 710a includes an output terminal OP, first to fifth transistors Tr1-Tr5 and the first capacitor C1 and the second capacitor C2.
但是,图6中的示范性实施例的信号生成电路710a进一步包括第一输入端IP11和第二输入端IP12和第一方向控制端IP13和第二方向控制端IP14。在第i信号生成电路710a中,第一输入端IP11与供给第(i+1)门信号gi+1(下文称为“第一输入信号”)的第(i+1)门线Gi+1连接,和第二输入端IP12与供给第(i-1)门信号gi-1(下文称为“第二输入信号”)的第(i-1)门线Gi-1连接。类似地,在第(i+1)信号生成电路710a中,第一输入端IP11与供给第(i+2)门信号gi+2作为第一输入信号的第(i+2)门线Gi+2连接,和第二输入端IP12与供给第i门信号gi作为第二输入信号的第i门线Gi连接。However, the signal generation circuit 710a of the exemplary embodiment in FIG. 6 further includes a first input terminal IP11 and a second input terminal IP12 and a first direction control terminal IP13 and a second direction control terminal IP14. In the i-th signal generating circuit 710a, the first input terminal IP11 is connected to the (i+1)th gate line G i that supplies the (i+1)th gate signal g i+1 (hereinafter referred to as "the first input signal") +1 connection, and the second input terminal IP12 is connected to the (i-1)th gate line G i-1 supplying the (i-1)th gate signal g i-1 (hereinafter referred to as "second input signal"). Similarly, in the (i+1)th signal generating circuit 710a, the first input terminal IP11 is connected to the (i+2)th gate line G that supplies the (i+2)th gate signal g i+2 as the first input signal i+2 is connected, and the second input terminal IP12 is connected to the i-th gate line G i supplying the i-th gate signal g i as the second input signal.
与如图3所示的信号生成电路710一样,将来自信号控制器601的存储控制信号CONT3a的第一、第二和第三时钟信号CK1、CK1B和CK2分别供应给信号生成电路710a,并且将来自信号控制器601或外部设备(未示出)的高压AVDD和低压AVSS供应给信号生成电路710a。分别通过第一方向控制端IP13和第二方向控制端IP14,进一步将来自信号控制器610的存储控制信号CONT3a的第一方向信号DIR或DIRa和第二方向信号DIRB或DIRBa供应给信号生成电路710a。Like the signal generating circuit 710 shown in FIG. 3, the first, second, and third clock signals CK1, CK1B, and CK2 of the memory control signal CONT3a from the signal controller 601 are supplied to the signal generating circuit 710a, respectively, and the High voltage AVDD and low voltage AVSS from the signal controller 601 or an external device (not shown) are supplied to the signal generating circuit 710a. The first direction signal DIR or DIRa and the second direction signal DIRB or DIRBa of the storage control signal CONT3a from the signal controller 610 are further supplied to the signal generating circuit 710a through the first direction control terminal IP13 and the second direction control terminal IP14, respectively. .
信号生成电路710a进一步包括每一个都含有控制端、输入端和输出端的第六晶体管Tr6和第七晶体管Tr7。The signal generating circuit 710a further includes a sixth transistor Tr6 and a seventh transistor Tr7 each having a control terminal, an input terminal, and an output terminal.
如图6所示,第六晶体管Tr6的控制端与第一方向控制端IP13连接,第六晶体管Tr6的输入端与第一输入端IP11连接,和第六晶体管Tr6的输出端分别与第一到第三晶体管Tr1-Tr3的控制端连接。As shown in Figure 6, the control terminal of the sixth transistor Tr6 is connected with the first direction control terminal IP13, the input terminal of the sixth transistor Tr6 is connected with the first input terminal IP11, and the output terminal of the sixth transistor Tr6 is respectively connected with the first to the first direction control terminal IP11. The control terminals of the third transistors Tr1-Tr3 are connected.
并且,第七晶体管Tr7的控制端与第二方向控制端IP14连接,第七晶体管Tr7的输入端与第二输入端IP12连接,和第七晶体管Tr7的输出端分别与第一到第三晶体管Tr1-Tr3的控制端连接。And, the control terminal of the seventh transistor Tr7 is connected with the second direction control terminal IP14, the input terminal of the seventh transistor Tr7 is connected with the second input terminal IP12, and the output terminal of the seventh transistor Tr7 is respectively connected with the first to the third transistor Tr1 - Tr3 control port connection.
除了附加门线Gd之外,液晶显示器进一步包括第二附加门线Gda。第二附加门线Gda与第二门驱动电路401b的一端连接,以便在传送了门信号g1之后将开门电压Von传送到第一存储信号生成电路701a。In addition to the additional gate line Gd , the liquid crystal display further includes a second additional gate line Gda . The second additional gate line G da is connected to one end of the second gate driving circuit 401b to transmit the gate-on voltage Von to the first storage signal generating circuit 701a after transmitting the gate signal g1 .
在一个示范性实施例中,附加门线Gda和附加门线Gd都不同开关元件Q连接。In an exemplary embodiment, both the additional gate line G da and the additional gate line G d are not connected to the switching element Q. Referring to FIG.
信号生成电路的操作例子将参照图7A和7B作进一步详细描述。An example of the operation of the signal generating circuit will be described in further detail with reference to FIGS. 7A and 7B.
如图7A和7B所示,分别施加在第一和第二方向控制端IP13和IP14上的第一和第二方向信号DIR和DIRB在一帧内分别保持第三高电平电压Vh3或第三低电平电压Vl3,和第一和第二方向信号DIR和DIRB分别具有彼此相反的相位。更具体地说,当第一方向信号DIR具有第三高电平电压Vh3时,第二方向信号DIRB具有第三低电平电压Vl3,和当第一方向信号DIR具有第三低电平电压Vl3时,第二方向信号DIRB具有第三高电平电压Vh3。并且,第一和第二方向信号DIR和DIRB的第三高电平电压Vh3具有导通第六和第七晶体管Tr6和Tr7的幅度,第三高电平电压Vh3的幅度可以是例如大约15V,但不局限于此。第一和第二方向信号DIR和DIRB的第三低电平电压Vl3具有关断第六和第七晶体管Tr6和Tr7的幅度,第三低电平电压Vl3的幅度可以是例如大约-10V,但不局限于此.As shown in Figures 7A and 7B, the first and second direction signals DIR and DIRB applied to the first and second direction control terminals IP13 and IP14 respectively maintain the third high level voltage Vh3 or the third The low-level voltage V13' and the first and second direction signals DIR and DIRB have phases opposite to each other, respectively. More specifically, when the first direction signal DIR has a third high-level voltage Vh3, the second direction signal DIRB has a third low-level voltage Vl3, and when the first direction signal DIR has a third low-level voltage Vl3 , the second direction signal DIRB has a third high level voltage Vh3. And, the third high-level voltage Vh3 of the first and second direction signals DIR and DIRB has a magnitude of turning on the sixth and seventh transistors Tr6 and Tr7, the magnitude of the third high-level voltage Vh3 may be, for example, about 15V, But not limited to this. The third low-level voltage V13 of the first and second direction signals DIR and DIRB has a magnitude that turns off the sixth and seventh transistors Tr6 and Tr7, and the magnitude of the third low-level voltage V13 may be, for example, about -10V, but Not limited to this.
因此,第六和第七晶体管Tr6和Tr7在给定时间具有彼此相反的偏置,从而当第六晶体管Tr6处在导通状态时,第七晶体管Tr7处在关断状态,而当第六晶体管Tr6处在关断状态时,第七晶体管Tr7处在导通状态。Therefore, the sixth and seventh transistors Tr6 and Tr7 have opposite biases to each other at a given time, so that when the sixth transistor Tr6 is in the on state, the seventh transistor Tr7 is in the off state, and when the sixth transistor Tr6 is in the on state, the seventh transistor Tr7 is in the off state, and when the sixth transistor When Tr6 is in the off state, the seventh transistor Tr7 is in the on state.
在本发明的可替代示范性实施例中,例如,可以根据选择信号,或可以利用控制门驱动器40的扫描方向的控制信号输出第一和第二方向信号DIR和DIRB,但不局限于此。In an alternative exemplary embodiment of the present invention, for example, the first and second direction signals DIR and DIRB may be output according to a selection signal, or may utilize a control signal controlling a scan direction of the gate driver 40, but are not limited thereto.
现在针对门驱动器401的扫描方向是前向方向的状况进一步详细描述信号生成电路710a的操作。The operation of the signal generating circuit 710a is now described in further detail for the case where the scanning direction of the gate driver 401 is the forward direction.
参照图6和7A,第一方向信号DIR处在第三高电平电压Vh3上输入第一方向控制端IP13中,和第二方向信号DIRB处在第三低电平电压Vl3上输入第二方向控制端IP14中。Referring to FIGS. 6 and 7A, the first direction signal DIR is input to the first direction control terminal IP13 at the third high level voltage Vh3, and the second direction signal DIRB is input to the second direction at the third low level voltage Vl3. Control terminal IP14.
因此,第六晶体管Tr6导通和第七晶体管Tr7关断,从而根据施加在第一输入端IP11上的第一输入信号,例如,门信号gi+1操作信号生成电路710a。更具体地说,当像第i信号生成电路710a那样操作信号生成电路710a时,通过施加在第(i+1)门线Gi+1(图1)上的门信号gi+1的开门电压Von操作第i信号生成电路710a。因此,如上面参照图3和4所述,通过第一到第五晶体管Tr1-Tr5和第一和第二电容器C1和C2的操作输出具有预定电平的存储信号Vsi。Accordingly, the sixth transistor Tr6 is turned on and the seventh transistor Tr7 is turned off, thereby operating the signal generation circuit 710a according to the first input signal applied to the first input terminal IP11, for example, the gate signal g i+1 . More specifically, when the signal generation circuit 710a is operated like the i-th signal generation circuit 710a, the gate opening by the gate signal g i+1 applied to the (i+1)th gate line G i+1 ( FIG. 1 ) The voltage Von operates the i-th signal generating circuit 710a. Therefore, as described above with reference to FIGS. 3 and 4 , the storage signal V si having a predetermined level is output through operations of the first to fifth transistors Tr1 - Tr5 and the first and second capacitors C1 and C2 .
类似地,当门驱动器401的扫描方向是后向方向时,如图7B所示,第一方向信号DIR处在第三低电平电压Vl3上,和第二方向信号DIRB呈现第三高电平电压Vh3。Similarly, when the scanning direction of the gate driver 401 is the backward direction, as shown in FIG. 7B, the first direction signal DIR is at the third low level voltage V13, and the second direction signal DIRB is at the third high level Voltage Vh3.
因此,第六晶体管Tr6关断和第七晶体管Tr7导通,从而通过施加在第二输入端IP12上的第二输入信号,例如,门信号gi-1操作信号生成电路710a。更具体地说,当像第i-1信号生成电路710a那样操作信号生成电路710a时,通过施加在第(i-1)门线Gi-1(图1)上的门信号gi-1的开门电压Von操作第i信号生成电路710a。因此,如上面参照图3和4所述,通过第一到第五晶体管Tr1-Tr5和第一和第二电容器C1和C2的操作输出具有预定电平的存储信号Vsi。Therefore, the sixth transistor Tr6 is turned off and the seventh transistor Tr7 is turned on, thereby operating the signal generation circuit 710a by the second input signal applied to the second input terminal IP12, eg, the gate signal g i−1 . More specifically, when the signal generation circuit 710a is operated like the i-1th signal generation circuit 710a, by the gate signal g i-1 applied to the (i-1)th gate line G i-1 ( FIG. 1 ) The gate opening voltage Von operates the i-th signal generation circuit 710a. Therefore, as described above with reference to FIGS. 3 and 4 , the storage signal V si having a predetermined level is output through operations of the first to fifth transistors Tr1 - Tr5 and the first and second capacitors C1 and C2 .
取代通过输入端IP直接将输入信号供应给信号生成电路710(图3)分别导通第一到第三晶体管Tr1-Tr3,如图所示,当扫描方向是前向方向时,通过第六晶体管T6将门信号供应给信号生成电路710a,作为分别施加在第一到第三晶体管Tr1-Tr3的控制端上的输入信号,而当扫描方向是后向方向时,通过第七晶体管T7将门信号供应给信号生成电路710a,作为分别施加在第一到第三晶体管Tr1-Tr3的控制端上的输入信号。第一到第五晶体管Tr1-Tr5和第一和第二电容器C1和C2的操作分别与上面参照图3进一步详细描述的信号生成电路710的那些相同。Instead of directly supplying the input signal to the signal generating circuit 710 ( FIG. 3 ) through the input terminal IP, the first to third transistors Tr1-Tr3 are respectively turned on. As shown in the figure, when the scanning direction is the forward direction, the sixth transistor T6 supplies the gate signal to the signal generating circuit 710a as input signals respectively applied to the control terminals of the first to third transistors Tr1-Tr3, and when the scanning direction is the backward direction, the gate signal is supplied to The signal generation circuit 710a serves as input signals applied to the control terminals of the first to third transistors Tr1-Tr3, respectively. Operations of the first to fifth transistors Tr1 - Tr5 and the first and second capacitors C1 and C2 are respectively the same as those of the signal generating circuit 710 described in further detail above with reference to FIG. 3 .
现在参照图8A和8B进一步详细描述根据本发明可替代示范性实施例的信号生成电路710a的操作。The operation of the signal generation circuit 710a according to an alternative exemplary embodiment of the present invention will now be described in further detail with reference to FIGS. 8A and 8B.
如图8A和8B所示,第一方向信号DIRa和第二方向信号DIRBa分别施加在第一和第二方向控制端IP13和IP14上,并且分别具有第三高电平电压Vh3和第三低电平电压Vl3。并且,第三高电平电压Vh3和第三低电平电压Vl3每一个在大约1H内保持不变,并且它们的占空比可以是大约50%。更具体地说,第一方向信号DIRa和第二方向信号DIRBa每大约1H在第三高电平电压Vh3和第三低电平电压Vl3之间交替。并且,第一方向信号DIRa和第二方向信号DIRBa具有大约1800的相差和相互反相。As shown in Figures 8A and 8B, the first direction signal DIRa and the second direction signal DIRBa are applied to the first and second direction control terminals IP13 and IP14 respectively, and have a third high level voltage Vh3 and a third low level voltage respectively. Flat voltage Vl3. And, each of the third high-level voltage Vh3 and the third low-level voltage Vl3 remains unchanged for about 1H, and their duty ratios may be about 50%. More specifically, the first direction signal DIRa and the second direction signal DIRBa alternate between the third high-level voltage Vh3 and the third low-level voltage Vl3 every about 1H. Also, the first direction signal DIRa and the second direction signal DIRBa have a phase difference of about 180° and are mutually inverse.
如上所述,第一方向信号DIRa和第二方向信号DIRBa的第三高电平电压Vh3可以是例如大约15V,和它们的第三低电平电压Vl3可以是例如大约-10V。As described above, the third high-level voltage Vh3 of the first direction signal DIRa and the second direction signal DIRBa may be, for example, about 15V, and their third low-level voltage Vl3 may be, for example, about -10V.
对于每行,分别将第一方向信号DIRa和第二方向信号DIRBa交替供应给信号生成电路710a的第一方向控制端IP13和第二方向控制端IP14。更具体地说,在与奇数号存储电极线S1,S3,...,S2n-1连接的信号生成电路710a中,将第一方向信号DIRa供应给第一方向控制端IP13,并将第二方向信号DIRBa供应给第二方向控制端IP14。相反,在与偶数号存储电极线S2,S4,...,S2n连接的信号生成电路710a中,将第二方向信号DIRBa供应给第一方向控制端IP13,并将第一方向信号DIRa供应给第二方向控制端IP14。For each row, the first direction signal DIRa and the second direction signal DIRBa are respectively alternately supplied to the first direction control terminal IP13 and the second direction control terminal IP14 of the signal generating circuit 710a. More specifically, in the signal generation circuit 710a connected to the odd-numbered storage electrode lines S1, S3, ..., S2n - 1 , the first direction signal DIRa is supplied to the first direction control terminal IP13, and The second direction signal DIRBa is supplied to the second direction control terminal IP14. On the contrary, in the signal generating circuit 710a connected to the even - numbered storage electrode lines S2, S4, ..., S2n, the second direction signal DIRBa is supplied to the first direction control terminal IP13, and the first direction signal DIRa is supplied to the second direction control terminal IP14.
现在针对门驱动器401的扫描方向是前向方向的情况,参照图6和8B进一步详细描述信号生成电路710a的操作。Now for the case where the scanning direction of the gate driver 401 is the forward direction, the operation of the signal generation circuit 710a is described in further detail with reference to FIGS. 6 and 8B.
在奇数号信号生成电路710a,例如,第i信号生成电路710a中,当将作为第一输入信号的第(i+1)门信号gi+1的开门电压Von供应给第一输入端IP11,并将作为第二输入信号的第(i-1)门信号gi-1的关门电压Voff供应给第二输入端IP12时,将第一方向信号DIRa作为第一方向信号供应给第一方向控制端IP13,并将第二方向信号DIRBa作为第二方向信号供应给第二方向控制端IP14。In the odd-numbered signal generation circuit 710a, for example, the i-th signal generation circuit 710a, when the gate-on voltage Von of the (i+1)th gate signal g i+1 as the first input signal is supplied to the first input terminal IP11, When the gate-off voltage Voff of the (i-1)th gate signal g i-1 as the second input signal is supplied to the second input terminal IP12, the first direction signal DIRa is supplied as the first direction signal to the first direction control terminal IP13, and supplies the second direction signal DIRBa as the second direction signal to the second direction control terminal IP14.
在门信号gi+1的开门电压Von的第一周期T1内,第一方向信号DIRa处在第三低电平电压Vl3上和第二方向信号DIRBa处在第三高电平电压Vh3上,从而第六晶体管Tr6关断,而第七晶体管Tr7导通。并且,第二输入信号是关门电压Voff,因此,第一到第三晶体管Tr1-Tr3分别关断,从而存储信号Vsi保持在如图8A所示,像例如低电平存储信号电压V-那样的前电压状态。In the first period T1 of the gate-on voltage Von of the gate signal g i+1 , the first direction signal DIRa is at the third low level voltage Vl3 and the second direction signal DIRBa is at the third high level voltage Vh3, Thus, the sixth transistor Tr6 is turned off, and the seventh transistor Tr7 is turned on. And, the second input signal is the gate-off voltage Voff, therefore, the first to third transistors Tr1-Tr3 are respectively turned off, so that the storage signal Vsi is kept at the low-level storage signal voltage V- as shown in FIG. 8A, for example. the previous voltage state.
在大约1H之后,例如,在门信号gi+1的开门电压Von的周期T2内,第一方向信号DIRa从第三低电平电压Vl3改变成第三高电平电压Vh3,而第二方向信号DIRBa从第三高电平电压Vh3改变成第三低电平电压Vl3。After about 1H, for example, within the period T2 of the gate-on voltage Von of the gate signal g i+1 , the first direction signal DIRa changes from the third low-level voltage Vl3 to the third high-level voltage Vh3, while the second direction The signal DIRBa changes from the third high-level voltage Vh3 to the third low-level voltage Vl3.
因此,第六晶体管Tr6在门信号gi+1的开门电压Von的周期T2内导通,并且将开门电压Von传送到第一到第三晶体管Tr1-Tr3的控制端,导通第一到第三晶体管Tr1-Tr3。Therefore, the sixth transistor Tr6 is turned on in the period T2 of the gate-opening voltage Von of the gate signal g i+1 , and transmits the gate-opening voltage Von to the control terminals of the first to third transistors Tr1-Tr3, turning on the first to the third transistors Tr1-Tr3 Three transistors Tr1-Tr3.
正如上面参照图3和4所述的那样,第一时钟信号CK1在周期T2内处在第一低电平电压Vl1上,而第二和第三时钟信号CK1B和CK2分别处在第一高电平电压Vh1和Vh2上。因此,将第三时钟信号CK2的第二高电平电压Vh2和高压AVDD传送到输出端OP。因此,存储信号Vsi从低电平存储信号电压V-改变成高电平存储信号电压V+,并且充电第二电容器C2。As described above with reference to FIGS. 3 and 4, the first clock signal CK1 is at the first low level voltage Vl1 during the period T2, while the second and third clock signals CK1B and CK2 are at the first high level voltage respectively. Leveling voltages Vh1 and Vh2. Accordingly, the second high level voltage Vh2 of the third clock signal CK2 and the high voltage AVDD are transmitted to the output terminal OP. Accordingly, the storage signal V si is changed from the low-level storage signal voltage V− to the high-level storage signal voltage V+, and the second capacitor C2 is charged.
当第一方向信号DIRa在经过了周期T2之后改变成第三低电平电压Vl3时,第六晶体管Tr6关断。但是,晶体管Tr5通过充电到第二电容器C2的电压保持在导通状态上,从而仍然将高压AVDD传送到输出端OP,致使存储信号Vsi保持高电平存储信号电压V+。When the first direction signal DIRa changes to the third low level voltage V13 after the period T2 elapses, the sixth transistor Tr6 is turned off. However, the transistor Tr5 is kept in the on state by being charged to the voltage of the second capacitor C2, thereby still delivering the high voltage AVDD to the output terminal OP, so that the storage signal Vsi maintains a high level storage signal voltage V+.
接着,进一步详细描述偶数号信号生成电路710a,例如,第(i+1)信号生成电路710a的操作。Next, the operation of the even-numbered signal generating circuit 710a, for example, the (i+1)th signal generating circuit 710a is described in further detail.
仍然参照图6和8A,在第(i+1)信号生成电路710a中,当将作为第一输入信号的第(i+2)门信号gi+2的开门电压Von供应给第一输入端IP11,并将作为第二输入信号的第i门信号gi的关门电压Voff供应给第二输入端IP12时,将第二方向信号DIRBa作为第一方向信号供应给第一方向控制端IP13,并将第一方向信号DIRa作为第二方向信号供应给第二方向控制端IP14。Still referring to FIGS. 6 and 8A, in the (i+1)th signal generating circuit 710a, when the gate opening voltage Von of the (i+2)th gate signal g i+2 as the first input signal is supplied to the first input terminal IP11, and when the gate-off voltage Voff of the i-th gate signal g i as the second input signal is supplied to the second input terminal IP12, the second direction signal DIRBa is supplied to the first direction control terminal IP13 as the first direction signal, and The first direction signal DIRa is supplied to the second direction control terminal IP14 as the second direction signal.
由于在门信号gi+1的开门电压Von的第一周期T1内,第一方向信号DIRBa处在第三低电平电压Vl3上和第二方向信号DIRa处在第三高电平电压Vh3上,第六晶体管Tr6关断,而第七晶体管Tr7导通。第二输入信号是关门电压Voff,和第一到第三晶体管Tr1-Tr3分别关断,从而存储信号Vsi保持在像例如高电平存储信号电压V+那样的前电压状态。Since the first direction signal DIRBa is at the third low level voltage Vl3 and the second direction signal DIRa is at the third high level voltage Vh3 in the first period T1 of the gate opening voltage Von of the gate signal g i+1 , the sixth transistor Tr6 is turned off, and the seventh transistor Tr7 is turned on. The second input signal is the off-gate voltage Voff, and the first to third transistors Tr1-Tr3 are respectively turned off, so that the storage signal Vsi remains in a previous voltage state like, for example, a high-level storage signal voltage V+.
在大约1H之后,例如,在门信号gi+2的开门电压Von的周期T2内,第一方向信号DIRBa从第三低电平电压Vl3改变成第三高电平电压Vh3,和第二方向信号DIRa从第三高电平电压Vh3改变成第三低电平电压Vl3。After about 1H, for example, within the period T2 of the gate-on voltage Von of the gate signal g i+2 , the first direction signal DIRBa changes from the third low-level voltage Vl3 to the third high-level voltage Vh3, and the second direction The signal DIRa changes from the third high-level voltage Vh3 to the third low-level voltage Vl3.
因此,第六晶体管Tr6在门信号gi+2的开门电压Von的周期T2内导通,并且将开门电压Von传送到第一到第三晶体管Tr1-Tr3的控制端,导通第一到第三晶体管Tr1-Tr3。Therefore, the sixth transistor Tr6 is turned on in the period T2 of the gate-opening voltage Von of the gate signal g i+2 , and transmits the gate-opening voltage Von to the control terminals of the first to third transistors Tr1-Tr3, turning on the first to the third transistors Tr1-Tr3 Three transistors Tr1-Tr3.
正如上面参照图3和4所述的那样,第一时钟信号CK1处在第一高电平电压Vh1上,和第二和第三时钟信号CK1B和CK2分别处在第一低电平电压Vl1和Vl2上,从而将第三时钟信号CK2的低电平电压Vl2和低压AVSS传送到输出端OP。因此,存储信号Vsi+1从高电平存储信号电压V+改变成低电平存储信号电压V-,并且充电第一电容器C1。As described above with reference to FIGS. 3 and 4, the first clock signal CK1 is at the first high-level voltage Vh1, and the second and third clock signals CK1B and CK2 are respectively at the first low-level voltage Vl1 and Vl2, so that the low level voltage Vl2 and the low voltage AVSS of the third clock signal CK2 are transmitted to the output terminal OP. Accordingly, the storage signal V si+1 is changed from the high-level storage signal voltage V+ to the low-level storage signal voltage V−, and the first capacitor C1 is charged.
当第一方向信号DIRBa在经过了周期T2之后改变成第三低电平电压Vl3时,第六晶体管Tr6关断。但是,第四晶体管Tr4通过充电到第一电容器C1的电压保持在导通状态上,从而仍然将低压AVSS传送到输出端OP,并且存储信号Vsi+1保持在低电平存储信号电压V-上。When the first direction signal DIRBa changes to the third low level voltage V13 after the period T2 has elapsed, the sixth transistor Tr6 is turned off. However, the fourth transistor Tr4 is kept in the on state by being charged to the voltage of the first capacitor C1, thereby still delivering the low voltage AVSS to the output terminal OP, and the storage signal V si+1 is kept at the low level storage signal voltage V- superior.
在下文中,将参照门驱动器401的扫描方向是后向方向的图8B进一步详细描述信号生成电路710a的操作。在这种情况下,方向信号DIRa和DIRBa的波形与上面参照图8A所述的前向方向的情况相反。Hereinafter, the operation of the signal generating circuit 710a will be described in further detail with reference to FIG. 8B in which the scanning direction of the gate driver 401 is the backward direction. In this case, the waveforms of the direction signals DIRa and DIRBa are opposite to those of the forward direction described above with reference to FIG. 8A.
参照图6和8B,在作为第二输入信号施加在第二输入端IP12上的相应门信号的开门电压Von的周期1H,例如,接在上述周期T2的随后周期T2内,晶体管Tr7导通,第一到第三晶体管Tr1-Tr3也分别导通。更具体地说,根据第一到第三时钟信号CK1、CK1B和CK2的状态操作第一到第五晶体管Tr1-Tr5和第一和第二电容器C1和C2,将存储信号传送到相应存储电极线。第一到第五晶体管Tr1-Tr5和第一和第二电容器C1和C2的操作近似与如上所述,门驱动器的扫描方向是前向方向的情况相同,因此这里省略对它们的描述。Referring to FIGS. 6 and 8B, in the period 1H of the gate-on voltage Von of the corresponding gate signal applied to the second input terminal IP12 as the second input signal, for example, in the subsequent period T2 of the above-mentioned period T2, the transistor Tr7 is turned on, The first to third transistors Tr1-Tr3 are also turned on respectively. More specifically, the first to fifth transistors Tr1-Tr5 and the first and second capacitors C1 and C2 are operated according to the states of the first to third clock signals CK1, CK1B, and CK2 to transmit storage signals to corresponding storage electrode lines . Operations of the first to fifth transistors Tr1-Tr5 and the first and second capacitors C1 and C2 are approximately the same as in the case where the scanning direction of the gate driver is the forward direction as described above, so their descriptions are omitted here.
如上所述,在本发明的示范性实施例中,第一和第二方向信号DIRa和DIRBa分别施加在第一和第二方向控制端IP13和IP14上。并且,第一和第二方向信号DIRa和DIRBa每1H在第三高电平电压Vh3和第三低电平电压Vl3之间交替。因此,晶体管的工作特性不会因方向信号DIRa和DIRBa的长时间施加和由此引起的元件退化而变化。As mentioned above, in the exemplary embodiment of the present invention, the first and second direction signals DIRa and DIRBa are applied to the first and second direction control terminals IP13 and IP14, respectively. And, the first and second direction signals DIRa and DIRBa alternate between the third high-level voltage Vh3 and the third low-level voltage Vl3 every 1H. Therefore, the operating characteristics of the transistor will not change due to the long-term application of the direction signals DIRa and DIRBa and the resulting element degradation.
除了多晶薄膜晶体管之外,显示在图8A和8B的时序图中的信号也可以应用于含有非晶薄膜晶体管的液晶显示器。The signals shown in the timing charts of FIGS. 8A and 8B can also be applied to liquid crystal displays including amorphous thin film transistors in addition to polycrystalline thin film transistors.
在一个示范性实施例中,门驱动器401是双向门驱动器,并且第一到第四扫描开始信号STV1和STV4之一可以按照扫描方向施加在供给门信号的信号生成电路710a。In one exemplary embodiment, the gate driver 401 is a bidirectional gate driver, and one of the first to fourth scan start signals STV1 and STV4 may be applied to the signal generation circuit 710a supplying the gate signal in a scan direction.
在下文中,将参照图9-13B进一步详细描述根据本发明可替代示范性实施例的液晶显示器。Hereinafter, a liquid crystal display according to an alternative exemplary embodiment of the present invention will be described in further detail with reference to FIGS. 9-13B.
图9是根据本发明另一个示范性实施例的液晶显示器的方块图,图10是根据图9中的本发明示范性实施例的信号生成电路的示意性电路图,而图11是根据图10中的本发明示范性实施例的信号生成电路的平面布局图。图12是例示根据本发明一个实施例的施加在门驱动器上的门时钟信号与施加在存储信号发生器上的存储时钟信号的关系的信号时序图。图13A和13B是根据图10中的本发明示范性实施例的信号生成电路的信号时序图,其中,图13A是门驱动器的扫描方向是前向方向的信号时序的例子,而图13B是门驱动器的扫描方向是后向方向的信号时序的例子。9 is a block diagram of a liquid crystal display according to another exemplary embodiment of the present invention, FIG. 10 is a schematic circuit diagram of a signal generating circuit according to an exemplary embodiment of the present invention in FIG. 9 , and FIG. A plan layout diagram of a signal generating circuit of an exemplary embodiment of the present invention. 12 is a signal timing diagram illustrating a relationship between a gate clock signal applied to a gate driver and a storage clock signal applied to a storage signal generator according to one embodiment of the present invention. 13A and 13B are signal timing diagrams of the signal generating circuit according to the exemplary embodiment of the present invention in FIG. The scan direction of the driver is an example of signal timing in the backward direction.
除了下面进一步详细描述的不同部分之外,根据如图9-13B所示的本发明示范性实施例的LCD近似与如图1到6所示的LCD相同。因此,用相同的标号表示执行相同或相似操作的元件,并且下面将省略对它们的任何重复描述。The LCD according to the exemplary embodiment of the present invention as shown in FIGS. 9-13B is approximately the same as the LCD shown in FIGS. 1 to 6 except for the different parts described in further detail below. Therefore, elements performing the same or similar operations are denoted by the same reference numerals, and any repeated description thereof will be omitted below.
参照图9,LCD包括液晶面板组件300b、门驱动器402、数据驱动器500、与数据驱动器500连接的灰度电压发生器800、存储信号发生器702和信号控制器602。Referring to FIG. 9 , the LCD includes a liquid crystal panel assembly 300 b , a gate driver 402 , a data driver 500 , a grayscale voltage generator 800 connected to the data driver 500 , a storage signal generator 702 and a signal controller 602 .
与上面更详细描述和如图5所示的LCD一样,门驱动器402是双向门驱动器。As with the LCD described in more detail above and shown in FIG. 5, the gate driver 402 is a bidirectional gate driver.
存储信号发生器702的第一和第二存储信号生成电路702a和702b可以分别包括与存储电极线S1-S2n连接的多个信号生成电路710b,和每个信号生成电路710b都与如图6所示的信号生成电路710a类似。The first and second storage signal generating circuits 702a and 702b of the storage signal generator 702 may respectively include a plurality of signal generating circuits 710b connected to storage electrode lines S 1 -S 2n , and each signal generating circuit 710b is connected to The signal generating circuit 710a shown in 6 is similar.
如图10所示,信号生成电路710b包括输出端OP、第一到第五晶体管Tr1-Tr5和第一和第二电容器C1和C2。As shown in FIG. 10, the signal generation circuit 710b includes an output terminal OP, first to fifth transistors Tr1-Tr5, and first and second capacitors C1 and C2.
信号生成电路710b进一步包括输入端IP21和控制端OP22。在第i信号生成电路710b中,例如,输入端IP21与供应第i门信号gi作为第一输入信号的第i门线Gi连接,类似地,在第(i+1)信号生成电路710b中,输入端IP21与供应第(i+1)门信号gi+1作为第一输入信号的第(i+1)门线Gi+1连接。The signal generation circuit 710b further includes an input terminal IP21 and a control terminal OP22. In the i-th signal generating circuit 710b, for example, the input terminal IP21 is connected to the i -th gate line Gi supplying the i-th gate signal g i as the first input signal, similarly, the (i+1)th signal generating circuit 710b , the input terminal IP21 is connected to the (i+1)th gate line G i+1 supplying the (i+1)th gate signal g i+1 as the first input signal.
将来自信号控制器602的存储控制信号CONT3的第一、第二和第三时钟信号CK1、CK1B和CK2分别供应给信号生成电路710b,并且将来自信号控制器602或外部设备(未示出)的高压AVDD和低压AVSS供应给信号生成电路710b。The first, second, and third clock signals CK1, CK1B, and CK2 of the storage control signal CONT3 from the signal controller 602 are respectively supplied to the signal generation circuit 710b, and are supplied from the signal controller 602 or an external device (not shown) The high voltage AVDD and low voltage AVSS are supplied to the signal generation circuit 710b.
通过控制端IP22进一步将来自信号控制器602的存储控制信号CONT3的多个存储时钟信号CLK_L(例如,如图10所示)、CLK_R、CLKB_L和CLKB_R的一个存储时钟信号供应给信号生成电路710b。One of a plurality of storage clock signals CLK_L (eg, as shown in FIG. 10 ), CLK_R, CLKB_L, and CLKB_R from the storage control signal CONT3 of the signal controller 602 is further supplied to the signal generation circuit 710 b through the control terminal IP22 .
如图9和11所示,第一存储信号生成电路702a的信号生成电路710b位于液晶面板组件300b的左侧和生成偶数号存储信号Vs2,Vs4,...,Vs2n,并且将从液晶面板组件300b的左侧施加的多个存储时钟信号CLK_L、CLK_R、CLKB_L和CLKB_R的存储时钟信号CLK_L和CLKB_L交替供应给信号生成电路710b。第二存储信号生成电路702b的信号生成电路710b位于液晶面板组件300b的相对右侧和生成奇数号存储信号Vs1,Vs3,...,Vs2n-1,并且将从液晶面板组件300b的右侧施加的多个存储时钟信号CLK_L、CLK_R、CLKB_L和CLKB_R的存储时钟信号CLKB_R和CLK_L交替供应给信号生成电路710b。As shown in FIGS. 9 and 11, the signal generation circuit 710b of the first storage signal generation circuit 702a is located on the left side of the liquid crystal panel assembly 300b and generates even-numbered storage signals V s2 , V s4 , . . . The memory clock signals CLK_L and CLKB_L of the plurality of memory clock signals CLK_L, CLK_R, CLKB_L, and CLKB_R applied to the left side of the liquid crystal panel assembly 300b are alternately supplied to the signal generating circuit 710b. The signal generation circuit 710b of the second storage signal generation circuit 702b is located on the relative right side of the liquid crystal panel assembly 300b and generates odd-numbered storage signals V s1 , V s3 , ..., V s2n-1 , and will generate The memory clock signals CLKB_R and CLK_L of the plurality of memory clock signals CLK_L, CLK_R, CLKB_L, and CLKB_R applied on the right side are alternately supplied to the signal generation circuit 710b.
在本发明的可替代示范性实施例中,可以改变第一和第二存储信号生成电路702a和702b在液晶面板组件300b上的位置、第一和第二存储信号生成电路702a和702b与存储电极线之间的连接关系和第一和第二存储信号生成电路702a和702b与多个存储时钟信号CLK_L、CLKB_L、CLK_R和CLKB_R的操作关系。In an alternative exemplary embodiment of the present invention, the positions of the first and second storage signal generating circuits 702a and 702b on the liquid crystal panel assembly 300b, the positions of the first and second storage signal generating circuits 702a and 702b and the storage electrodes can be changed. The connection relationship between the lines and the operational relationship of the first and second storage signal generating circuits 702a and 702b and the plurality of storage clock signals CLK_L, CLKB_L, CLK_R, and CLKB_R.
并且,在可替代示范性实施例中,多个存储时钟信号CLK_L、CLKB_L、CLK_R和CLKB_R可以与生成门信号的门控制信号CONT1有关,并且可以根据施加在门驱动电路402a和402b上的门时钟信号生成。Also, in an alternative exemplary embodiment, the plurality of storage clock signals CLK_L, CLKB_L, CLK_R, and CLKB_R may be related to the gate control signal CONT1 that generates the gate signal, and may be based on the gate clock applied to the gate driving circuits 402a and 402b Signal generation.
根据本发明示范性实施例的门时钟信号和存储时钟信号的例子显示在图12中。An example of a gate clock signal and a store clock signal according to an exemplary embodiment of the present invention is shown in FIG. 12 .
图12示出了当门驱动器402的扫描方向是前向方向时,当门时钟信号GCK_L、GCK_R、GCKB_L和GCKB_R施加在分别生成第i、第(i+1)、第(i+2)和第(i+3)门信号gi、gi+1、gi+2和gi+3的第一和第二门驱动电路402a和402b时,多个存储时钟信号CLK_L、CLKB_R、CLKB_L和CLK_R施加在分别生成第i、第(i+1)、第(i+2)和第(i+3)存储信号Si、Si+1、Si+2和Si+3的第一和第二存储信号生成电路702a和702b上的存储时钟信号CLK_L、CLKB_R、CLKB_L和CLK_R。FIG. 12 shows that when the scanning direction of the gate driver 402 is the forward direction, when the gate clock signals GCK_L, GCK_R, GCKB_L and GCKB_R are applied to generate the i-th, (i+1), (i+2) and When the (i+3)th gate signals g i , g i+1 , g i+2 and g i+3 are the first and second gate drive circuits 402a and 402b, a plurality of storage clock signals CLK_L, CLKB_R, CLKB_L and CLK_R is applied on the first and storage clock signals CLK_L, CLKB_R, CLKB_L and CLK_R on the second storage signal generating circuits 702a and 702b.
但是,当门驱动器402的扫描方向是后向方向时,图12中的门时钟信号GCK_L、GCK_R、GCKB_L和GCKB_R可以是分别生成第(i+3)、第(i+2)、第(i+1)和第i门信号gi+3、gi+2、gi+1和gi的信号,和存储时钟信号CLK_L、CLKB_R、CLKB_L和CLK_R可以施加在第一和第二存储信号生成电路702a和702b上,分别生成第(i+3)、第(i+2)、第(i+1)和第i存储信号Si+3、Si+2、Si+1和Si。However, when the scanning direction of the gate driver 402 is the backward direction, the gate clock signals GCK_L, GCK_R, GCKB_L and GCKB_R in FIG. 12 can generate the (i+3), (i+2), (i +1) and i-th gate signals g i+3 , g i+2 , g i+1 and g i signals, and storage clock signals CLK_L, CLKB_R, CLKB_L and CLK_R can be applied to the first and second storage signal generation On the circuits 702a and 702b, respectively generate the (i+3), (i+2), (i+1) and i-th storage signals S i+3 , S i+2 , S i+1 and S i .
存储时钟信号CLK_L、CLKB_L、CLK_R和CLKB_R的脉冲宽度可以是大约2H,和它们的占空比可以是大约50%。存储时钟信号CLK_L、CLKB_L、CLK_R和CLKB_R每大约2H摆动一次。如图12所示,两个相应存储时钟信号CLK_R和CLKB_R或CLK_L和CLKB_L的每一个具有相位相反的波形。在相应存储时钟信号CLK_R和CLKB_R的每一个和与存储时钟信号CLK_R和CLKB_R相对应的存储时钟信号CLK_L和CLKB_L之间存在预定时间延迟。在示范性实施例中,延迟时间可以是例如大约1H,但不局限于此。存储时钟信号CLK_L、CLKB_L、CLK_R和CLKB_R具有第四高电平电压Vh4和第四低电平电压Vl4(图13A)。例如,高电平电压Vh4可以是大约15V,和低电平电压Vl4可以是大约-1V,但不局限于此。The pulse widths of the storage clock signals CLK_L, CLKB_L, CLK_R, and CLKB_R may be about 2H, and their duty ratios may be about 50%. The memory clock signals CLK_L, CLKB_L, CLK_R, and CLKB_R oscillate every approximately 2H. As shown in FIG. 12 , each of the two corresponding memory clock signals CLK_R and CLKB_R or CLK_L and CLKB_L has a waveform of opposite phase. There is a predetermined time delay between each of the corresponding memory clock signals CLK_R and CLKB_R and the memory clock signals CLK_L and CLKB_L corresponding to the memory clock signals CLK_R and CLKB_R. In an exemplary embodiment, the delay time may be, for example, about 1H, but is not limited thereto. The storage clock signals CLK_L, CLKB_L, CLK_R, and CLKB_R have a fourth high-level voltage Vh4 and a fourth low-level voltage Vl4 ( FIG. 13A ). For example, the high-level voltage Vh4 may be about 15V, and the low-level voltage V14 may be about -1V, but not limited thereto.
信号生成电路710b进一步包括每一个含有控制端、输入端和输出端的可替代第六晶体管Tr61和可替代第七晶体管Tr71。The signal generation circuit 710b further includes an alternative sixth transistor Tr61 and an alternative seventh transistor Tr71 each having a control terminal, an input terminal and an output terminal.
可替代第六晶体管Tr61的输入和控制端与输入端IP21连接,和可替代第六晶体管Tr61的输出端与第一到第三晶体管Tr1-Tr3的控制端连接,从而使可替代第六晶体管Tr61有效地起二极管的作用。The input and control terminals of the alternative sixth transistor Tr61 are connected to the input terminal IP21, and the output terminals of the alternative sixth transistor Tr61 are connected to the control terminals of the first to third transistors Tr1-Tr3, so that the alternative sixth transistor Tr61 Effectively acts as a diode.
可替代第七晶体管Tr71的控制端与控制端IP22连接,可替代第七晶体管Tr71的输入端与输入端IP21连接,和可替代第七晶体管Tr71的输出端与第一到第三晶体管Tr1-Tr3的控制端连接。The control terminal of the seventh transistor Tr71 can be replaced with the control terminal IP22, the input terminal of the seventh transistor Tr71 can be replaced with the input terminal IP21, and the output terminal of the seventh transistor Tr71 can be replaced with the first to third transistors Tr1-Tr3 control terminal connection.
现在参照图13A进一步详细描述信号生成电路710b,其中,门驱动器402的扫描方向是前向方向。The signal generating circuit 710b will now be described in further detail with reference to FIG. 13A, wherein the scanning direction of the gate driver 402 is the forward direction.
当将第i门信号gi的开门电压Von供应给信号生成电路710b,例如,与偶数号存储线连接的第i信号生成电路710b的输入端IP21时,可替代第六晶体管Tr61导通,和第一到第三晶体管Tr1-Tr3也导通。When the gate-on voltage Von of the i -th gate signal gi is supplied to the signal generating circuit 710b, for example, the input terminal IP21 of the i-th signal generating circuit 710b connected to the even-numbered storage line, the alternative sixth transistor Tr61 is turned on, and The first to third transistors Tr1-Tr3 are also turned on.
因此,对于第i门信号gi的开门电压Von的施加,将具有基于第一到第三时钟信号CK1、CK1B和CK2的各自状态的电压电平的信号传送到输出端OP和作为存储信号Vsi输出。Therefore, for the application of the gate-on voltage Von of the i -th gate signal gi, signals having voltage levels based on the respective states of the first to third clock signals CK1, CK1B, and CK2 are transmitted to the output terminal OP and stored as the signal V si output.
在门信号gi的开门电压Von的第一周期T1内,第一时钟信号CK1处在第一低电平电压Vl1上,和第二和第三时钟信号CK1B和CK2分别处在第一和第二高电平电压Vh1和Vh2上,并且通过第一、第三和第五晶体管Tr1、Tr3和Tr5的操作从输出端OP输出具有高电平存储信号电压V+的存储信号Vsi。In the first period T1 of the gate-on voltage Von of the gate signal gi , the first clock signal CK1 is at the first low-level voltage Vl1, and the second and third clock signals CK1B and CK2 are respectively at the first and second A storage signal V si with a high level storage signal voltage V+ is output from the output terminal OP on two high level voltages Vh1 and Vh2 and through the operations of the first, third and fifth transistors Tr1 , Tr3 and Tr5 .
但是,由于在门信号gi的开门电压Von的周期T2内,第一时钟信号CK1改变成第一高电平电压Vh1,和第二和第三时钟信号CK1B和CK2分别改变成第一和第二低电平电压Vl1和Vl2,通过第一、第二和第四晶体管Tr1、Tr2和Tr4的操作将具有低电平存储信号电压V-的存储信号Vsi传送到输出端OP,从而使存储信号Vsi从高电平存储信号电压V+改变成低电平存储信号电压V-。However, since the first clock signal CK1 changes to the first high-level voltage Vh1 during the period T2 of the gate-on voltage Von of the gate signal gi , and the second and third clock signals CK1B and CK2 change to the first and second Two low-level voltages Vl1 and Vl2, through the operation of the first, second and fourth transistors Tr1, Tr2 and Tr4, the storage signal V si with the low-level storage signal voltage V- is transmitted to the output terminal OP, so that the storage The signal Vsi changes from a high-level storage signal voltage V+ to a low-level storage signal voltage V-.
在周期T2之后,门信号gi改变成关门电压Voff,从而使起二极管作用的可替代第六晶体管Tr61关断。其结果是,可替代第六晶体管和可替代第七晶体管Tr61和Tr71每一个的输出端与之连接的节点N(图10)的电压VNi保持前高电平状态,致使第一到第三晶体管Tr1-Tr3保持导通状态,直到施加在控制端IP22上的存储时钟信号CLK_L再次改变成第四高电平电压Vh4。存储信号Vsi的电压电平根据第一到第三时钟信号CK1、CK1B和CK2的电压电平确定。更具体地说,第一时钟信号CK1改变成第一低电平电压Vl1,和第二和第三时钟信号CK1B和CK2分别改变成第一和第二高电平电压Vh1和Vh2,从而按照第一、第三和第五晶体管Tr1、Tr3和Tr5根据第一、第二和第三时钟信号CK1、CK1B和CK2的操作,将高电平存储信号电压V+传送到输出端OP,致使存储信号Vsi从低电平存储信号电压V-改变成高电平存储信号电压V+从输出端OP输出。After the period T2, the gate signal gi changes to the off-gate voltage Voff, thereby turning off the alternative sixth transistor Tr61 which functions as a diode. As a result, the voltage VNi of the node N (FIG. 10) to which the output terminal of each of the alternative sixth transistor and the alternative seventh transistor Tr61 and Tr71 is connected maintains the previous high level state, causing the first to third The transistors Tr1 - Tr3 are kept on until the storage clock signal CLK_L applied to the control terminal IP22 changes to the fourth high level voltage Vh4 again. The voltage level of the storage signal Vsi is determined according to the voltage levels of the first to third clock signals CK1, CK1B , and CK2. More specifically, the first clock signal CK1 is changed to a first low-level voltage Vl1, and the second and third clock signals CK1B and CK2 are changed to first and second high-level voltages Vh1 and Vh2, respectively, thereby according to the first 1. The third and fifth transistors Tr1, Tr3 and Tr5 transmit the high-level storage signal voltage V+ to the output terminal OP according to the operation of the first, second and third clock signals CK1, CK1B and CK2, so that the storage signal V si changes from a low-level stored signal voltage V- to a high-level stored signal voltage V+, which is output from the output terminal OP.
在经过了预定时间之后,当施加在控制端IP22上的存储时钟信号CLK_L处在第四高电平电压Vh4上时,可替代第七晶体管Tr71导通,从而将门信号gi的关门电压Voff施加在第一到第三晶体管Tr1-Tr3的控制端上。因此,第一到第三晶体管Tr1-Tr3的每一个都关断。于是,存储信号Vsi根据充电到电容器C2的电压和第五晶体管Tr5根据充电电压的操作,在下一个帧内保持高电平存储信号电压V+。After the predetermined time has elapsed, when the storage clock signal CLK_L applied to the control terminal IP22 is at the fourth high-level voltage Vh4, it can replace the seventh transistor Tr71 to be turned on, thereby applying the off-gate voltage Voff of the gate signal g i On the control terminals of the first to third transistors Tr1-Tr3. Therefore, each of the first to third transistors Tr1-Tr3 is turned off. Then, the storage signal V si maintains the high-level storage signal voltage V+ in the next frame according to the voltage charged to the capacitor C2 and the operation of the fifth transistor Tr5 according to the charging voltage.
接着,针对与奇数号存储线连接的第(i+1)连接的第(i+1)信号生成电路710b,描述信号生成电路710b的操作。Next, the operation of the signal generation circuit 710 b is described for the (i+1)th signal generation circuit 710 b connected to the (i+1)th connection to the odd-numbered storage line.
仍然参照图10和13A,当将第(i+1)门信号gi+1的开门电压Von供应给输入端IP21时,可替代第六晶体管Tr61导通,和第一到第三晶体管Tr1-Tr3也导通。Still referring to FIGS. 10 and 13A, when the gate opening voltage Von of the (i+1)th gate signal g i+1 is supplied to the input terminal IP21, the alternative sixth transistor Tr61 is turned on, and the first to third transistors Tr1- Tr3 is also turned on.
因此,对于第(i+1)门信号gi+1的开门电压Von的施加,将具有基于第一到第三时钟信号CK1、CK1B和CK2的状态的电压电平的信号传送到输出端OP和作为存储信号Vsi+1输出。Therefore, for the application of the gate-on voltage Von of the (i+1)th gate signal g i+1 , a signal having a voltage level based on the states of the first to third clock signals CK1, CK1B, and CK2 is transmitted to the output terminal OP and are output as storage signal V si+1 .
在门信号gi+1的开门电压Von的第一周期T1内,第一时钟信号CK1处在第一高电平电压Vh1上,和第二和第三时钟信号CK1B和CK2分别处在第一和第二低电平电压Vl1和Vl2上,并且通过第一、第二第第四晶体管Tr1、Tr2和Tr4的操作从输出端OP输出具有低电平存储信号电压V-的存储信号Vsi+2。In the first period T1 of the gate-on voltage Von of the gate signal g i+1 , the first clock signal CK1 is at the first high-level voltage Vh1, and the second and third clock signals CK1B and CK2 are respectively at the first and the second low-level voltage Vl1 and Vl2, and through the operation of the first, second and fourth transistors Tr1, Tr2 and Tr4, the storage signal V si+ with the low-level storage signal voltage V- is output from the output terminal OP 2 .
但是,在门信号gi+1的开门电压Von的周期T2内,第一时钟信号CK1改变成第一低电平电压Vl1,和第二和第三时钟信号CK1B和CK2分别改变成第一和第二高电平电压Vh1和Vh2,并且通过第一、第二和第四晶体管Tr1、Tr2和Tr4的操作将具有高电平存储信号电压V+的存储信号Vsi+1传送到输出端OP。因此,存储信号Vsi+1从低电平存储信号电压V-改变成高电平存储信号电压V+从输出端OP输出。However, within the period T2 of the gate-on voltage Von of the gate signal g i+1 , the first clock signal CK1 changes to the first low-level voltage Vl1, and the second and third clock signals CK1B and CK2 change to the first and The second high-level voltages Vh1 and Vh2, and the storage signal Vsi+1 having the high-level storage signal voltage V+ are transmitted to the output terminal OP through operations of the first, second and fourth transistors Tr1, Tr2 and Tr4. Accordingly, the storage signal V si+1 changes from the low-level storage signal voltage V− to the high-level storage signal voltage V+ and is output from the output terminal OP.
在周期T2之后,门信号gi+1改变成关门电压Voff,但在施加在直接控制端IP22上的存储时钟信号CLKB_R改变成第四高电平电压Vh4之前,节点N的电压VNi+1不会改变成前低电平状态Vl5,而是通过起二极管作用的可替代第六晶体管Tr61的操作保持在高电平状态Vh5上,致使第一到第三晶体管Tr1-Tr3保持在导通状态。于是,由于第一时钟信号CK1处在第一高电平电压Vh1上,和第二和第三时钟信号CK1B和CK2分别是第一和第二低电平电压Vl1和Vl2,通过第一、第二和第四晶体管Tr1、Tr2和Tr4的操作将低电平存储信号电压V-传送到输出端IP作为存储信号Vsi+1。其结果是,存储信号Vsi+1再次从高电平存储信号电压V+改变成低电平存储信号电压V-。After the period T2, the gate signal g i+1 changes to the gate-off voltage Voff, but before the storage clock signal CLKB_R applied to the direct control terminal IP22 changes to the fourth high-level voltage Vh4, the voltage VN i+1 of the node N It does not change to the previous low-level state Vl5, but remains in the high-level state Vh5 through the operation of the alternative sixth transistor Tr61, which acts as a diode, so that the first to third transistors Tr1-Tr3 remain in the on-state . Therefore, since the first clock signal CK1 is at the first high-level voltage Vh1, and the second and third clock signals CK1B and CK2 are at the first and second low-level voltages Vl1 and Vl2 respectively, through the first and second The operation of the second and fourth transistors Tr1 , Tr2 and Tr4 transmits the low-level storage signal voltage V− to the output terminal IP as storage signal V si+1 . As a result, the storage signal V si+1 changes again from the high-level storage signal voltage V+ to the low-level storage signal voltage V-.
在经过了预定时间之后,当施加在控制端IP22上的存储时钟信号CLKB_R改变成第四高电平电压Vh4时,可替代第七晶体管Tr71导通,并且将关门电压Voff的门信号gi+1施加在第一到第三晶体管Tr1-Tr3的控制端上,关断第一到第三晶体管Tr1-Tr3。因此,存储信号Vsi+1根据电容器C1的充电电压和第四晶体管Tr4的操作,保持在低电平存储信号电压V-上直到下一个帧。After the predetermined time has elapsed, when the storage clock signal CLKB_R applied to the control terminal IP22 changes to the fourth high-level voltage Vh4, the alternative seventh transistor Tr71 is turned on, and the gate signal g i+ of the gate-off voltage Voff is turned on. 1 is applied to the control terminals of the first to third transistors Tr1-Tr3 to turn off the first to third transistors Tr1-Tr3. Therefore, the storage signal V si+1 is maintained at the low level storage signal voltage V− until the next frame according to the charging voltage of the capacitor C1 and the operation of the fourth transistor Tr4 .
在下文中,将参照图13B进一步详细描述信号生成电路710b的操作,其中,门驱动器402的扫描方向是后向方向。Hereinafter, the operation of the signal generating circuit 710b will be described in further detail with reference to FIG. 13B, in which the scanning direction of the gate driver 402 is the backward direction.
如图13B所示,除了施加在输入端IP21上的各自门信号之外,信号生成电路710b的操作近似与上面参照图13A所述、门驱动器402的扫描方向是前向方向情况下的信号生成电路710b的操作相同,因此,这里将省略对它们的任何重复描述。As shown in FIG. 13B , except for the respective gate signals applied to the input terminal IP21, the operation of the signal generation circuit 710b is approximately the same as that described above with reference to FIG. 13A when the scanning direction of the gate driver 402 is the forward direction. The operation of the circuit 710b is the same, therefore, any repeated description of them will be omitted here.
根据如上所述的本发明的示范性实施例,在开门电压Von的第一周期T1的大约1H的时间周期内,输出第三时钟信号CK2的相应电平作为存储信号,但由于液晶显示器的响应速度与时间周期1H相比较慢,大约1H的存储信号的变化不会引起像素电极线的明显变化。According to the exemplary embodiment of the present invention as described above, in the time period of about 1H of the first period T1 of the gate-on voltage Von, the corresponding level of the third clock signal CK2 is output as the storage signal, but due to the response of the liquid crystal display The speed is slower than the time period 1H, and the change of the storage signal for about 1H will not cause obvious changes of the pixel electrode lines.
并且,施加在如图10所示的信号生成电路710b的控制端IP22上的存储时钟信号CLK_L、CLKB_L、CLK_R和CLKB_R根据关门电压Voff决定节点N上的电压电平,致使传送到输出端OP的电压电平在第一到第三时钟信号CK1、CK1B和CK2发生变化的大约1H的时间周期期间不会改变,从而使具有适当幅度电平的存储信号的电压电平保持到下一个帧。Moreover, the storage clock signals CLK_L, CLKB_L, CLK_R, and CLKB_R applied to the control terminal IP22 of the signal generating circuit 710b shown in FIG. 10 determine the voltage level on the node N according to the gate-off voltage Voff, so that the The voltage level does not change during the time period of about 1H in which the first to third clock signals CK1, CK1B, and CK2 change, thereby maintaining the voltage level of the storage signal with an appropriate amplitude level until the next frame.
因此,在根据本发明示范性实施例的LCD的存储信号发生器702中,除正常门线G1-G2n之外传送附加门信号的门线是多余的,并且不需要与门驱动器402的扫描方向相对应的分立方向信号。Therefore, in the storage signal generator 702 of the LCD according to an exemplary embodiment of the present invention, the gate lines transmitting additional gate signals other than the normal gate lines G 1 -G 2n are redundant, and the AND gate driver 402 is not required. A discrete direction signal corresponding to the scan direction.
现在参照图14到17B进一步详细描述根据本发明另一个示范性实施例的LCD。An LCD according to another exemplary embodiment of the present invention will now be described in further detail with reference to FIGS. 14 to 17B.
图14是根据本发明另一个示范性实施例的液晶显示器的方块图。图15是根据图14中的本发明示范性实施例的信号生成电路的示意性电路图,而图16是根据图15中的本发明示范性实施例的信号生成电路的平面布局图。图17A是利用行反转的根据图15中的本发明示范性实施例的信号生成电路的信号时序图,而图17B是利用帧反转的根据图15中的本发明示范性实施例的信号生成电路的信号时序图。FIG. 14 is a block diagram of a liquid crystal display according to another exemplary embodiment of the present invention. 15 is a schematic circuit diagram of a signal generating circuit according to the exemplary embodiment of the present invention in FIG. 14, and FIG. 16 is a plan layout view of the signal generating circuit according to the exemplary embodiment of the present invention in FIG. 17A is a signal timing diagram of a signal generating circuit according to the exemplary embodiment of the present invention in FIG. 15 using row inversion, and FIG. 17B is a signal according to the exemplary embodiment of the present invention in FIG. 15 using frame inversion. Generate a signal timing diagram for the circuit.
除了下面进一步详细描述的不同部分之外,根据如图14-17B所示的本发明示范性实施例的LCD近似与上面更详细描述的示范性实施例的LCD相同。因此,在图14-17B中用相同的标号表示执行与上述示范性实施例中相同或相似的操作的元件,并且下面将省略对它们的任何重复描述。Except for the different parts described in further detail below, the LCD according to the exemplary embodiment of the present invention as shown in FIGS. 14-17B is approximately the same as the LCD of the exemplary embodiment described in more detail above. Therefore, elements performing the same or similar operations as those in the above-described exemplary embodiments are denoted by the same reference numerals in FIGS. 14 to 17B , and any repeated description thereof will be omitted below.
如图14所示,LCD包括液晶面板组件300c、门驱动器403、数据驱动器500、与数据驱动器500连接的灰度电压发生器800、存储信号发生器703和控制上面元件的信号控制器603。As shown in FIG. 14, the LCD includes a liquid crystal panel assembly 300c, a gate driver 403, a data driver 500, a grayscale voltage generator 800 connected to the data driver 500, a storage signal generator 703, and a signal controller 603 for controlling the above elements.
如图9所示,门驱动器403是双向门驱动器。As shown in FIG. 9, the gate driver 403 is a bidirectional gate driver.
存储信号发生器703包括第一和第二存储信号生成电路703a和703b。第一和第二存储信号生成电路703a和703b每一个都包含每一个与多个存储电极线S1-S2n(图1)连接的多个信号生成电路710c。The storage signal generator 703 includes first and second storage signal generating circuits 703a and 703b. Each of the first and second storage signal generation circuits 703a and 703b includes a plurality of signal generation circuits 710c each connected to a plurality of storage electrode lines S 1 -S 2n ( FIG. 1 ).
每个信号生成电路710c近似与如图10所示的那个相同,例如,如图15所示,每个信号生成电路710c都包括输出端OP、每一个都含有控制端、输入端和输出端的第一到第五晶体管Tr1-Tr5以及第一和第二电容器C1和C2。Each signal generating circuit 710c is approximately the same as that shown in FIG. 10, for example, as shown in FIG. One to fifth transistors Tr1-Tr5 and first and second capacitors C1 and C2.
但是,每个信号生成电路710c进一步包括第一输入端IP31和第二输入端IP32和控制端IP41。However, each signal generating circuit 710c further includes a first input terminal IP31 and a second input terminal IP32 and a control terminal IP41.
参照图15,在第i信号生成电路710c中,第一输入端IP31与供给第(i+2)门信号gi+2的第(i+2)门线Gi+2连接,而第二输入端IP32与供给第(i-2)门信号gi-2的第(i-2)门线Gi-2连接。Referring to FIG. 15, in the i-th signal generation circuit 710c, the first input terminal IP31 is connected to the (i+2)th gate line G i+2 that supplies the (i+2)th gate signal g i+2 , and the second The input terminal IP32 is connected to the (i-2)th gate line G i-2 to which the (i-2)th gate signal g i-2 is supplied.
类似地,在第(i+1)信号生成电路710c中,第一输入端IP31与供给第(i+3)门信号gi+3的第(i+3)门线Gi+3连接,而第二输入端IP32与供给第(i-1)门信号gi-1的第(i-1)门线Gi-1连接。Similarly, in the (i+1)th signal generating circuit 710c, the first input terminal IP31 is connected to the (i+3)th gate line G i+3 supplying the (i+3)th gate signal g i+3 , And the second input terminal IP32 is connected to the (i-1)th gate line G i-1 supplying the (i-1)th gate signal g i-1 .
如图16所示,第一和第二存储信号生成电路703a和703b的每个第一信号生成电路710c的第二输入端IP32接收分别施加在相邻门驱动电路403a和403b上的第一扫描开始信号STV1和第三扫描开始信号STV3,并且将施加在相邻门驱动电路403a和403b上的第二扫描开始信号STV2和第四扫描开始信号STV4供应给第一和第二存储信号生成电路703a和703b的最后信号生成电路710c的第一输入端IP31。但是,在可替代示范性实施例中,例如,可以通过像假信号线那样的分立信号线将来自外部设备(未示出)的分立信号供应给第一和第二存储信号生成电路703a和703b的第一和最后信号生成电路710c的第一和第二输入端IP31和IP32,但不局限于此。As shown in FIG. 16, the second input terminal IP32 of each first signal generating circuit 710c of the first and second storage signal generating circuits 703a and 703b receives the first scan voltage applied to the adjacent gate driving circuits 403a and 403b respectively. The start signal STV1 and the third scan start signal STV3, and the second scan start signal STV2 and the fourth scan start signal STV4 applied to the adjacent gate drive circuits 403a and 403b are supplied to the first and second storage signal generation circuits 703a and the first input terminal IP31 of the final signal generating circuit 710c of 703b. However, in an alternative exemplary embodiment, for example, separate signals from an external device (not shown) may be supplied to the first and second storage signal generation circuits 703a and 703b through separate signal lines such as dummy signal lines. The first and second input terminals IP31 and IP32 of the first and last signal generating circuit 710c, but not limited thereto.
将来自信号控制器603的存储控制信号CONT3的第一、第二和第三时钟信号CK1、CK1B和CK2分别供应给信号生成电路710c,并且将来自信号控制器603或外部设备(未示出)的高压AVDD和低压AVSS供应给信号生成电路710c。The first, second, and third clock signals CK1, CK1B, and CK2 of the storage control signal CONT3 from the signal controller 603 are respectively supplied to the signal generating circuit 710c, and are supplied from the signal controller 603 or an external device (not shown) The high voltage AVDD and low voltage AVSS are supplied to the signal generating circuit 710c.
仍然参照图16,还通过控制端IP41将来自信号控制器603的门控制信号(图14)CONT1的多个门时钟信号GCK_L、GCK_R、GCKB_L和GCKB_R之一供应给每个信号生成电路710c。Still referring to FIG. 16 , one of a plurality of gate clock signals GCK_L, GCK_R, GCKB_L, and GCKB_R from the gate control signal ( FIG. 14 ) CONT1 of the signal controller 603 is also supplied to each signal generation circuit 710 c through the control terminal IP41 .
回头参照图15,信号生成电路710c进一步包括每一个都含有控制端、输入端和输出端的第八到第十晶体管Tr8-Tr10。Referring back to FIG. 15, the signal generation circuit 710c further includes eighth to tenth transistors Tr8-Tr10 each having a control terminal, an input terminal, and an output terminal.
第八晶体管Tr8的控制端与第一输入端IP31连接,第八晶体管Tr8的输入端与存储控制信号CONT3a的第一方向信号DIR连接,而第八晶体管Tr8的输出端与第一到第三晶体管Tr1-Tr3的控制端连接。The control end of the eighth transistor Tr8 is connected to the first input end IP31, the input end of the eighth transistor Tr8 is connected to the first direction signal DIR of the storage control signal CONT3a, and the output end of the eighth transistor Tr8 is connected to the first to third transistors The control end connection of Tr1-Tr3.
第九晶体管Tr9的控制端与第二输入端IP32连接,第九晶体管Tr9的输入端与存储控制信号CONT3a的第二方向信号DIRB连接,而第九晶体管Tr9的输出端与第一到第三晶体管Tr1-Tr3的控制端连接。The control terminal of the ninth transistor Tr9 is connected to the second input terminal IP32, the input terminal of the ninth transistor Tr9 is connected to the second direction signal DIRB of the storage control signal CONT3a, and the output terminal of the ninth transistor Tr9 is connected to the first to third transistors The control end connection of Tr1-Tr3.
第十晶体管Tr10的控制端与控制端IP41连接,第十晶体管Tr10的输入端与关门电压Voff连接,而第十晶体管Tr10的输出端与第一到第三晶体管Tr1-Tr3的控制端连接。The control terminal of the tenth transistor Tr10 is connected to the control terminal IP41, the input terminal of the tenth transistor Tr10 is connected to the gate-off voltage Voff, and the output terminal of the tenth transistor Tr10 is connected to the control terminals of the first to third transistors Tr1-Tr3.
下面将进一步详细描述每一个都含有信号生成电路710c的第一和第二存储信号生成电路703a和703b的操作。只是为了例示起见,所述的LCD的反转类型是行反转。The operation of the first and second storage signal generating circuits 703a and 703b each including a signal generating circuit 710c will be described in further detail below. Just for the sake of illustration, the inversion type of the LCD described is row inversion.
下面将针对门驱动器403的扫描方向是前向方向,从而第一方向信号DIR具有高电平电压,而第二方向信号DIRB具有低电平电压的状况,参照图17A描述信号生成电路710c的操作。The scanning direction of the gate driver 403 is the forward direction, so that the first direction signal DIR has a high-level voltage and the second direction signal DIRB has a low-level voltage, and the operation of the signal generating circuit 710c will be described with reference to FIG. 17A .
并且,将参照图15和17A描述信号生成电路710c,例如,与作为奇数号存储电极线的第i存储电极线Si连接的第i信号生成电路的操作。Also, the operation of the signal generation circuit 710c, eg, the i-th signal generation circuit connected to the i-th storage electrode line S i that is an odd-numbered storage electrode line, will be described with reference to FIGS. 15 and 17A.
在施加了第i门信号gi的开门电压Von之后,第(i+2)门信号gi+2的开门电压Von施加在输入端IP31上,从而使第八晶体管Tr8导通,因此,第一方向信号DIR的第三高电平电压Vh3通过节点N1施加在第一到第三晶体管Tr1-Tr3的控制端上,导通第一到第三晶体管Tr1-Tr3。After the gate-opening voltage Von of the i-th gate signal g i is applied, the gate-opening voltage Von of the (i+2)th gate signal g i+2 is applied to the input terminal IP31, thereby turning on the eighth transistor Tr8, therefore, the The third high-level voltage Vh3 of the one-direction signal DIR is applied to the control terminals of the first to third transistors Tr1-Tr3 through the node N1 to turn on the first to third transistors Tr1-Tr3.
因此,如图17A所示,在施加了第(i+2)门信号gi+2的开门电压Von的大约2H内,基于第一到第三时钟信号CK1、CK1B和CK2的电压电平的相应电压电平输出到输出端OP作为存储信号Vsi。此时,由于第(i-2)门信号gi-2保持关开电压Voff,所以第九晶体管Tr9关断,并且第二方向信号DIRB不影响节点N1的电压VN1。Therefore, as shown in FIG. 17A , within about 2H of the gate-on voltage Von of the (i+2)th gate signal g i+2 being applied, based on the voltage levels of the first to third clock signals CK1 , CK1B, and CK2 The corresponding voltage level is output to the output terminal OP as the storage signal V si . At this time, since the (i-2)th gate signal g i-2 maintains the on-off voltage Voff, the ninth transistor Tr9 is turned off, and the second direction signal DIRB does not affect the voltage VN1 of the node N1.
因此,在第(i+2)门信号gi+2的开门电压Von的第一周期T1内,通过第一、第二和第四晶体管Tr1、Tr2和Tr4的操作,从输出端OP输出处在低电平存储信号电压V-上的存储信号Vsi。在第(i+2)门信号gi+2的开门电压Von的周期T2内,通过第一、第三和第五晶体管Tr1、Tr3和Tr5的操作,从输出端OP输出处在高电平存储信号电压V+上的存储信号Vsi。Therefore, in the first period T1 of the opening voltage Von of the (i+2)th gate signal g i+2 , through the operations of the first, second and fourth transistors Tr1, Tr2 and Tr4, the output from the output terminal OP The storage signal V si at the low level storage signal voltage V-. In the period T2 of the opening voltage Von of the (i+2)th gate signal g i+2 , through the operation of the first, third and fifth transistors Tr1, Tr3 and Tr5, the output from the output terminal OP is at a high level Store signal V si at store signal voltage V+.
仍然参照图17A,在第(i+2)门信号gi+2的开门电压Von的周期T2之后,施加在控制端IP41上的门时钟信号GCK_L在大约2H内保持第四高电平电压Vh4。Still referring to FIG. 17A, after the period T2 of the opening voltage Von of the (i+2)th gate signal g i+2 , the gate clock signal GCK_L applied to the control terminal IP41 maintains the fourth high level voltage Vh4 within about 2H .
其结果是,第十晶体管Tr10导通和将关门电压Voff施加在节点N1上,并且关断第一到第三晶体管Tr1-Tr3。As a result, the tenth transistor Tr10 turns on and applies the off-gate voltage Voff to the node N1, and turns off the first to third transistors Tr1-Tr3.
于是,由于对第二电容器C2充电的电压和第五晶体管Tr5根据充电电压的操作,存储信号Vsi保持在高电平存储信号电压V+上直到下一个帧。Then, due to the voltage charged to the second capacitor C2 and the operation of the fifth transistor Tr5 according to the charging voltage, the storage signal Vsi is maintained at the high level storage signal voltage V+ until the next frame.
接着,参照图15和17A进一步详细描述与作为偶数号存储电极线的第(i+1)存储电极线Si+1连接的信号生成电路710C的操作。Next, the operation of the signal generating circuit 710C connected to the (i+1)-th storage electrode line S i+1 which is an even-numbered storage electrode line is described in further detail with reference to FIGS. 15 and 17A .
与第i信号生成电路710C一样,当第(i+3)门信号gi+3的开门电压Von施加在输入端IP31上时,第八晶体管Tr8导通,并且通过具有第三高电平电压Vh3的第一方向信号导通第一到第三晶体管Tr1-Tr3。因此,基于第一、第二和第三时钟信号CK1、CK1B和CK2的电压电平的相应电平电压的存储信号Vsi+1输出到输出端OP。Like the i-th signal generating circuit 710C, when the gate-on voltage Von of the (i+3)th gate signal g i+3 is applied to the input terminal IP31, the eighth transistor Tr8 is turned on, and passes the third high-level voltage The first direction signal of Vh3 turns on the first to third transistors Tr1-Tr3. Accordingly, the storage signal V si+1 of the corresponding level voltage based on the voltage levels of the first, second and third clock signals CK1 , CK1B and CK2 is output to the output terminal OP.
当第(i+3)门信号gi+3的状态从关门电压Voff改变成开门电压Von时,施加在控制端IP41上的门时钟信号GCK_R在大约2H内保持第四高电平电压Vh4。When the state of the (i+3)th gate signal g i + 3 changes from the gate-off voltage Voff to the gate-on voltage Von, the gate clock signal GCK_R applied to the control terminal IP41 maintains the fourth high level voltage Vh4 within about 2H.
因此,第十晶体管Tr10导通,并且通过传送到节点N1的关门电压Voff关断第一到第三晶体管Tr1-Tr3。随后,存储信号Vsi+1根据对第一电容器C1充电的电压和第四晶体管Tr4根据充电电压的操作,保持低电平存储信号电压V-直到下一个帧。Accordingly, the tenth transistor Tr10 is turned on, and the first to third transistors Tr1 - Tr3 are turned off by the off-gate voltage Voff transmitted to the node N1. Subsequently, the storage signal V si+1 maintains the low-level storage signal voltage V− until the next frame according to the voltage charged to the first capacitor C1 and the operation of the fourth transistor Tr4 according to the charging voltage.
在门驱动器403的扫描方向是后向方向的情况下,第一方向信号DIR具有第三低电平电压Vl3和第二方向信号DIRB具有第三高电平电压Vh3。因此,与前向扫描方向不同,当扫描方向是后向方向时,通过施加在第二输入端IP32上的门信号和第二方向信号DIRB导通第一到第三晶体管Tr1-Tr3。In case the scanning direction of the gate driver 403 is the backward direction, the first direction signal DIR has a third low level voltage Vl3 and the second direction signal DIRB has a third high level voltage Vh3. Therefore, unlike the forward scanning direction, when the scanning direction is the backward direction, the first to third transistors Tr1-Tr3 are turned on by the gate signal applied to the second input terminal IP32 and the second direction signal DIRB.
除了上面的描述之外,信号生成电路710c的操作与门驱动器403的扫描方向是前向方向,输出具有与相应存储电极线相对应的电平的存储信号的情况相同,因此这里省略对信道选择器710c的操作的重复描述。并且,与门驱动器403的扫描方向是前向方向的情况类似,施加在第一输入端IP31上的门信号在大约2H内输出开门信号Von之后,在一个帧内输出关门信号Voff,从而使第八晶体管Tr8关断。因此,第一方向信号DIR不影响节点N1的电压VN1。In addition to the above description, the operation of the signal generation circuit 710c is the same as the case where the scanning direction of the gate driver 403 is the forward direction and outputs a storage signal having a level corresponding to the corresponding storage electrode line, so the selection of the channel is omitted here. A repeated description of the operation of the device 710c. And, similar to the case where the scanning direction of the gate driver 403 is the forward direction, the gate signal applied to the first input terminal IP31 outputs the gate-opening signal Von within about 2H, and then outputs the gate-closing signal Voff within one frame, so that the first The eight transistor Tr8 is turned off. Therefore, the first direction signal DIR does not affect the voltage VN1 of the node N1.
接着,参照图15和17B进一步详细描述信号生成电路710c的操作,在这种情况下,根据本发明示范性实施例的LCD在帧反转模式下工作。Next, the operation of the signal generation circuit 710c is described in further detail with reference to FIGS. 15 and 17B, in this case, the LCD according to the exemplary embodiment of the present invention operates in the frame inversion mode.
现在参照图17B进一步详细描述信号生成电路710c的操作。信号生成电路710c的操作与参照图17A所述的信号生成电路710c的操作类似。The operation of the signal generating circuit 710c is now described in further detail with reference to FIG. 17B. The operation of the signal generating circuit 710c is similar to that of the signal generating circuit 710c described with reference to FIG. 17A.
在图17中,第一、第二和第三时钟信号CK1、CK1B和CK2每预定周期(例如,大约1H)交替变化,但如图17B所示,第一、第二和第三时钟信号CK1、CK1B和CK2的每一个在一个帧内保持恒定电压。但是,如图17B所示,第一、第二和第三时钟信号CK1、CK1B和CK2每一个的波形每相继帧反相。In FIG. 17, the first, second, and third clock signals CK1, CK1B, and CK2 alternately change every predetermined period (for example, about 1H), but as shown in FIG. 17B, the first, second, and third clock signals CK1 Each of , CK1B, and CK2 maintains a constant voltage within one frame. However, as shown in FIG. 17B, the waveform of each of the first, second, and third clock signals CK1, CK1B, and CK2 is inverted every successive frame.
当门驱动器403的扫描方向是前向方向时,第一方向信号DIR具有第三高电平电压Vh3,和第二方向信号DIRB具有第三低电平电压Vl3。When the scanning direction of the gate driver 403 is the forward direction, the first direction signal DIR has a third high level voltage Vh3, and the second direction signal DIRB has a third low level voltage Vl3.
首先,描述对于施加在像素PX上、具有例如正极性的数据电压,与第i存储电极线Si连接的第i信号生成电路710c的操作。First, the operation of the i-th signal generation circuit 710c connected to the i-th storage electrode line S i with respect to a data voltage having, for example, positive polarity applied to the pixel PX is described.
第一时钟信号CK1保持第一低电平电压Vl1,而第二和第三时钟信号CK1B和CK2保持第一高电平电压Vh1。The first clock signal CK1 maintains a first low-level voltage Vl1, and the second and third clock signals CK1B and CK2 maintain a first high-level voltage Vh1.
在施加了第i门信号gi的开门电压Von之后,当将第(i+2)门信号gi+2的开门电压Von施加在第一输入端IP31上时,第八晶体管Tr8导通,并且第一到第三晶体管Tr1-Tr3通过第一方向信号DIR导通。After the gate-opening voltage Von of the i-th gate signal g i is applied, when the gate-opening voltage Von of the (i+2)th gate signal g i+2 is applied to the first input terminal IP31, the eighth transistor Tr8 is turned on, And the first to third transistors Tr1-Tr3 are turned on by the first direction signal DIR.
由于第三时钟信号CK2保持第二高电平电压Vh2,存储信号Vsi保持高电平存储信号电压V+。Since the third clock signal CK2 maintains the second high-level voltage Vh2 , the storage signal Vsi maintains the high-level storage signal voltage V+.
当第(i+2)门信号gi+2改变成关门电压Voff,并且通过施加在控制端IP41上、像例如门时钟信号GCK_L那样的相应时钟信号关断第一到第三晶体管Tr1-Tr3时,存储信号Vsi根据充电到第二电容器C2的电压和第五晶体管Tr5根据充电电压的操作保持高电平存储信号电压V+直到下一个帧。When the (i+2)th gate signal g i+2 is changed to the gate-off voltage Voff, and the first to third transistors Tr1-Tr3 are turned off by a corresponding clock signal applied to the control terminal IP41, such as the gate clock signal GCK_L , the storage signal V si maintains the high level storage signal voltage V+ until the next frame according to the voltage charged to the second capacitor C2 and the operation of the fifth transistor Tr5 according to the charging voltage.
接着,进一步详细描述具有负极性的数据电压施加在像素PX上时,与第i存储电极线Si连接的第i信号生成电路710c的操作。在这种情况下,第一时钟信号CK1保持第一高电平电压Vh1,而第二和第三时钟信号CK1B和CK2保持第一低电平电压Vl1。Next, the operation of the i-th signal generating circuit 710c connected to the i-th storage electrode line S i when a data voltage having a negative polarity is applied to the pixel PX is described in further detail. In this case, the first clock signal CK1 maintains the first high-level voltage Vh1, and the second and third clock signals CK1B and CK2 maintain the first low-level voltage Vl1.
在施加了第i门信号gi的开门电压Von之后,当将第(i+2)门信号gi+2的开门电压Von施加在第一输入端IP31上时,响应于第八晶体管Tr8导通,第一到第三晶体管Tr1-Tr3也分别导通。因此,通过保持第二低电平电压Vl2的第三时钟信号CK2,使存储信号Vsi输出低电平存储信号电压V-。After applying the gate-opening voltage Von of the i-th gate signal g i , when the gate-opening voltage Von of the (i+2)th gate signal g i+2 is applied to the first input terminal IP31, the eighth transistor Tr8 is turned on in response to is turned on, the first to third transistors Tr1-Tr3 are also turned on respectively. Therefore, by the third clock signal CK2 maintaining the second low-level voltage Vl2 , the storage signal Vsi outputs a low-level storage signal voltage V−.
随后,当第(i+2)门信号gi+2改变成关门电压Voff,和通过施加在控制端IP41上的门时钟信号GCK_L关断第一到第三晶体管Tr1-Tr3时,存储信号Vsi根据对第一电容器C2充电的电压和第四晶体管Tr4根据充电电压的操作保持低电平存储信号电压V-直到下一个帧。Subsequently, when the (i+2)th gate signal g i+2 is changed to the gate-off voltage Voff, and the first to third transistors Tr1-Tr3 are turned off by the gate clock signal GCK_L applied to the control terminal IP41, the storage signal V si maintains the low-level storage signal voltage V- until the next frame according to the voltage charged to the first capacitor C2 and the operation of the fourth transistor Tr4 according to the charged voltage.
当门驱动器403的扫描信号沿着后向方向时,第一方向信号DIR具有第五低电平电压Vl5,和第二方向信号DIRB具有第一高电平电压Vh5。When the scan signal of the gate driver 403 is in the backward direction, the first direction signal DIR has a fifth low level voltage Vl5, and the second direction signal DIRB has a first high level voltage Vh5.
因此,当门驱动器403的扫描方向是后向方向时,通过施加在第二输入端IP32上的门信号和第二方向信号DIRB导通第一到第三晶体管Tr1-Tr3。除了上面的描述之外,信号生成电路710c的操作与上面更详细描述的门驱动器403的扫描方向是前向方向的情况相同,因此这里省略对信号生成电路710c的操作的任何重复描述。Therefore, when the scanning direction of the gate driver 403 is the backward direction, the first to third transistors Tr1-Tr3 are turned on by the gate signal applied to the second input terminal IP32 and the second direction signal DIRB. Except for the above description, the operation of the signal generation circuit 710c is the same as the case where the scanning direction of the gate driver 403 is the forward direction described in more detail above, so any repeated description of the operation of the signal generation circuit 710c is omitted here.
如上所述,当LCD以帧反转模式工作时,第一、第二和第三时钟信号CK1、CK1B和CK2在大约一个帧内保持相同电压电平。As described above, when the LCD operates in the frame inversion mode, the first, second and third clock signals CK1, CK1B and CK2 maintain the same voltage level for about one frame.
于是,在施加在相应像素行上的门信号从开门电压Von改变成关门电压Voff之后,由于如图15所示的信号生成电路710c根据从第一或第二门驱动器403a或403b的下一级输出、相对于第一或第二门驱动器403a或403b的前一级延迟了大约2H的门信号的开门电压Von工作,出现了帧反转。因此,由于施加在第i门线Gi上的开门电压Von和施加在第i存储信号生成电路710c上的开门电压Von之间的相差是大约2H,开门电压Von不会重叠。因此,在第i像素行的充电操作基本完成之后,施加在第i存储电极线Si上的存储信号Vsi的信号电平发生改变,从而根据存储信号Vsi的改变信号电平改变第i像素行的充电电压。Then, after the gate signal applied to the corresponding pixel row is changed from the gate-on voltage Von to the gate-off voltage Voff, since the signal generating circuit 710c shown in FIG. Outputting the gate signal Von, which is delayed by about 2H from the previous stage of the first or second gate driver 403a or 403b, operates with frame inversion. Therefore, since the phase difference between the gate-on voltage Von applied to the i -th gate line Gi and the gate-on voltage Von applied to the i-th storage signal generating circuit 710c is about 2H, the gate-on voltages Von do not overlap. Therefore, after the charging operation of the i-th pixel row is substantially completed, the signal level of the storage signal V si applied to the i-th storage electrode line S i changes, thereby changing the i-th storage signal V si according to the changed signal level of the storage signal V si The charging voltage for the pixel row.
可替代地,当自从门信号的改变完成之后经过了预定时间时,第一、第二和第三时钟信号CK1、CK1B和CK2的状态可以发生改变,并且可以在门信号从开门电压改变成关门电压,或可替代地,从关门电压改变成开门电压之后输出第一、第二和第三时钟信号CK1、CK1B和CK2。Alternatively, the states of the first, second and third clock signals CK1, CK1B and CK2 may be changed when a predetermined time has elapsed since the change of the gate signal is completed, and may voltage, or alternatively, the first, second and third clock signals CK1, CK1B and CK2 are output after the gate-off voltage is changed to the gate-open voltage.
根据如本文所述的本发明的示范性实施例,由于公用电压固定在预定电平上,和幅度随预定周期改变的存储信号施加在存储电极线上,使像素电极电压的范围增大了,和使像素电压的范围扩大了,而灰度电压的范围则没有相应增大。因此,扩大了灰度电压的有效电压范围,从而有效地提高了分辨率。According to an exemplary embodiment of the present invention as described herein, since the common voltage is fixed at a predetermined level, and a storage signal whose amplitude varies with a predetermined period is applied to the storage electrode line, the range of the pixel electrode voltage is increased, And the range of the pixel voltage is expanded, but the range of the gray voltage is not increased accordingly. Therefore, the effective voltage range of the gray scale voltage is expanded, thereby effectively improving the resolution.
而且,在施加某个范围的数据电压的情况下生成的像素电压的范围大于在施加预定值的存储信号的情况下生成的像素电压的范围。因此,有效地降低了功耗。另外,无需附加选择电路地采用了含有双向门驱动器和存储信号发生器的液晶显示器,从而有效地缩小了液晶显示器的尺寸和/或降低了液晶显示器的制造成本。Also, the range of pixel voltages generated when a certain range of data voltages is applied is larger than the range of pixel voltages generated when a storage signal of a predetermined value is applied. Therefore, power consumption is effectively reduced. In addition, a liquid crystal display including a bidirectional gate driver and a storage signal generator is adopted without additional selection circuits, thereby effectively reducing the size of the liquid crystal display and/or reducing the manufacturing cost of the liquid crystal display.
在可替代示范性实施例中,根据本发明示范性实施例的液晶显示器可以根据例如帧反转以及行反转工作,但不局限于此。In alternative exemplary embodiments, a liquid crystal display according to an exemplary embodiment of the present invention may operate according to, for example, frame inversion and row inversion, but is not limited thereto.
本发明不应该被理解为局限于本文给出的示范性实施例。更确切地说,提供这些示范性实施例是为了使本公开变得全面彻底,充分地向本领域的普通技术人员传达本发明的概念。The present invention should not be construed as limited to the exemplary embodiments presented herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.
虽然通过参照本发明的某些示范性实施例已经对本发明作了具体描述,但本领域的普通技术人员应该明白,可以在形式和细节上对其作各种各样的改变,而不偏离所附权利要求书限定的本发明的精神和范围。Although the present invention has been particularly described with reference to certain exemplary embodiments of the present invention, those skilled in the art will understand that various changes in form and details may be made therein without departing from the teachings. The spirit and scope of the invention are defined by the appended claims.
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