CN102621827A - Maskless exposure system and exposure method thereof - Google Patents
Maskless exposure system and exposure method thereof Download PDFInfo
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Abstract
The invention provides a maskless exposure system and an exposure method thereof. The maskless exposure system comprises a laser light source, a half-wave plate, a beam splitter mirror, a first light intensity attenuator, a first electric shutter, a first reflecting mirror, a beam expanding mirror, a collimating mirror, a mask support plate, a Fourier transform lens, a photorefractive crystal, a second reflecting mirror, a second light intensity attenuator, a second electric shutter, an imaging lens and a wafer support frame. Due to the adoption of the maskless exposure system provided by the invention, the quantity of masks can be reduced greatly, and cost of the masks caused by the use of multiple sets of masks is lowered.
Description
Technical field
The invention belongs to field of semiconductor manufacture, relate in particular to a kind of no mask exposure system and exposure method thereof.
Background technology
Photoetching is one of technology of semiconductor manufacturing most critical, and its exposure technique can be divided into traditional optical exposure, electron beam exposure, ion beam exposure and X ray exposure etc.
Contact exposure in the traditional optical exposure technique can obtain higher resolution, but the result who repeats to contact between mask and the wafer produces defective on mask, and these defectives will be repeated to duplicate on the wafer, causes the yield of product to descend.Though the defect problem that produces in the contact exposure has been avoided in proximity printing, because the rapid decline that the increase in gap has brought resolution.Projection exposure utilize the optical projection image-forming principle with the mask projection imaging to wafer; Carry out contactless exposure; Both obtained the resolution the same with contact exposure; Avoid the contact exposure damage again, polluted the drawback of mask, become the main flow exposure technique of present traditional optical exposure, but the projection exposure technology still do not avoided the use of mask.Electron beam exposure need not mask; Can under the control of computing machine, directly draw and make public the wafer that scribbles photosensitive material; But electron beam exposure throughput rate is low; And can produce serious proximity effect, influence the resolution of image and the precision of figure, at present electron beam exposure only is applicable to the small serial production of some key component in making and the integrated circuit of mask.Ion beam exposure also need not mask, can be directly to wafer exposure, and do not have proximity effect, but because the alignment precision problem is still unresolved, and be used for producing in enormous quantities and need time.The X ray exposure is not used for producing in enormous quantities still in the experiment development stage as yet.
Improving constantly of the continuous maturation of holographic optics technology and photorefractive crystal growing technology level feasiblely is applicable to that the realization of the no mask exposure system of production in enormous quantities becomes possibility.As everyone knows; When the identical LASER Light Source bundle in two bundle polarization directions meets, can interfere phenomenon, produce light and dark spatial fringe at the light beam overlapping region; If beam of laser light source wherein (being called light beam 1) had passed through an object (for example mask) before meeting with another bundle LASER Light Source (being called light beam 2); All information that just have this object (mask) in the so light and dark spatial fringe are if can be recorded in this light and dark spatial fringe in a kind of material, even after light beam 1 and the original (mask) are removed so; Only also can reproduce the original, the principle of holographic optics that Here it is through light beam 2 irradiation recording materials.
The material that is suitable for writing down this light and dark striped has multiple, use at present at most technology the most ripe material be exactly photorefractive crystal, like LiBbO3, BaTiO3, SBN, KNSBN etc.; Why this type of material can write down this light and dark striped; Be because they have photorefractive effect; When so-called photorefractive effect received illumination exactly, its refractive index can receive the spatial modulation of light intensity, produced and the corresponding index distribution of light intensity space distribution.Have many good qualities as recording medium with this type of material, at first it has angular selectivity, and each angle can both write down a width of cloth hologram, is convenient to multiple magnanimity record; Secondly it has erasability, is convenient to repeatedly reuse; Its record is the phase hologram structure once more, and diffraction efficiency is higher, can make full use of luminous energy; Last it also have wavelength selectivity, every kind of wavelength also can corresponding a kind of hologram, is convenient to the selection of this used laser instrument of system.
Summary of the invention
The present invention is directed to the problem and shortage that exists in the photolithographic exposure; A kind of simple in structure, with low cost no mask exposure system is provided; This system is the same with projection exposure can to obtain the resolution the same with contact exposure, and than projection exposure cost advantage is arranged more, in exposure process, need not mask; Can be suitable for the production in enormous quantities of various sizes wafer directly to wafer exposure.
For solving the problems of the technologies described above; The present invention proposes a kind of no mask exposure system, comprising: LASER Light Source, half-wave plate, beam splitter, first variable optical attenuator, first electronic shutter, first catoptron, beam expanding lens, collimating mirror, the mask bracing frame that is used for fixing mask, fourier transform lens, photorefractive crystal, second catoptron, second variable optical attenuator, second electronic shutter, imaging len and wafer support; The laser that said LASER Light Source sends is divided into transmitted light beam and folded light beam through arriving said beam splitter behind the said half-wave plate through behind the said beam splitter; Arrive said first catoptron behind said transmitted light beam said first variable optical attenuator of process and said first electronic shutter; Pass through said beam expanding lens and said collimating mirror again, arrive said photorefractive crystal through said mask bracing frame and said fourier transform lens again; Said folded light beam is through behind said second catoptron; Again through arriving said photorefractive crystal behind said second variable optical attenuator and said second electronic shutter; After said smooth flanging crystal, also be placed with said imaging len and the said wafer support that is used to place wafer, the front focus of said imaging len and the back focus of said fourier transform lens overlap.
Preferably, identical through the polarization direction of laser behind the said half-wave plate with the e optical axis of said photorefractive crystal.
Optional, said half-wave plate is placed perpendicular to said laser beam direction, and said half-wave plate optical axis becomes miter angle with surface level simultaneously.
Optional; The transmitted light beam that said mask bracing frame of process and said fourier transform lens arrive said photorefractive crystal is the thing light wave; Folded light beam through arriving said photorefractive crystal behind said second variable optical attenuator and said second electronic shutter is a reference light wave, and the duration scope of the said photorefractive material of the common irradiation of said thing light wave and reference light wave is 10Sec～10min.
Optional, the light intensity proportional range of said thing light wave and said reference light wave is 1: 3-1: 15.
Optional, said photorefractive crystal is processed by photorefractive material.
Optional, said photorefractive material is a kind of among LiBbO3, BaTiO3, SBN, the KNSBN.
Optional, also comprise a fixing rotating disk, said fixedly rotating disk is in order to fixing said photorefractive crystal.
Optional, said photorefractive crystal is positioned on the back focus of said fourier transform lens.
Optional, said wafer support has two wafer orientation nails, and said wafer orientation nail is fixed in wafer on the wafer support and makes said wafer orientation in same position.
Optional, the image conjugate relation is satisfied in the position of said mask bracing frame and said wafer support.
Optional, said half-wave plate is 1mm～500mm from the distance range of said LASER Light Source outlet, and said half-wave plate diameter range is 10mm～100mm, and the distance range between said beam splitter and the said half-wave plate is 5mm～500mm.
Optional, the diameter dimension scope of said first variable optical attenuator is 5mm～100mm.
Optional, the distance range 10mm～1000mm between said first catoptron and the said beam splitter.
Optional, said beam expanding lens is the aplanasia biconcave lens, the front focus of said collimating mirror and the front focus of said beam expanding lens overlap.
Optional, the diameter range of said beam expanding lens is 5mm～30mm, and the focal range of said beam expanding lens is 5mm～100mm, and the diameter range of said collimating mirror is 20mm～200mm, and the focal range of said collimating mirror is 30mm～500mm.
Optional, said fourier transform lens is achromatic cemented doublet.
Optional, the diameter range of described fourier transform lens is 20mm～200mm, and the focal range of said fourier transform lens is 30mm～500mm, and the distance range between said fourier transform lens and the said collimating mirror is 5mm～1000mmm.
Optional, the diameter dimension scope of said second variable optical attenuator is 5mm～100mm, the distance range 10mm～1000mm between said second catoptron and the said beam splitter.
A kind of exposure method that does not have the mask exposure system comprises:
The holographic recording step: the light that LASER Light Source sends arrives beam splitter through behind the half-wave plate, is divided into transmitted light beam and folded light beam through behind the said beam splitter; Said transmitted light beam arrives said first catoptron after through first variable optical attenuator and first electronic shutter; Pass through beam expanding lens and collimating mirror again; Arrive the photorefractive crystal that is placed on predetermined angular through mask on the mask bracing frame and fourier transform lens again, said transmitted light beam becomes the thing light wave of the graphical information of carrying said mask; Said folded light beam through second catoptron after; Again through arriving said photorefractive crystal behind second variable optical attenuator and second electronic shutter; Said folded light beam becomes the reference light wave that does not carry any information; Said thing light wave and reference light wave interfere at said photorefractive crystal place, in said photorefractive crystal, form and carry the interference pattern of said mask plate patterns information;
Step of exposure: said first electronic shutter is set to normally off, closes the path of said transmitted light beam; Rotate said photorefractive crystal to said predetermined angular; Said second electronic shutter is opened, to open the path of said folded light beam; Reference light wave arrives and reproduces mask plate patterns information behind the said photorefractive crystal, through behind the imaging len, the graphical information of mask is imaged on the wafer that is fixed on the wafer support, thereby realize the exposure to said wafer.。
Compared with prior art; Use no mask exposure provided by the present invention system; The place interferes at photorefractive crystal, in said photorefractive crystal, forms and carries the interference pattern (hologram image) of mask pattern information, by reference light wave said hologram image is rendered on the wafer.Accomplish in the exposure process to wafer at reference light wave, need not mask, just can realize exposure wafer.The registering capacity that the while photorefractive crystal has magnanimity uses a photorefractive crystal just can cover all mask in the semiconductor production process fully.With this; Exposure machine for no mask exposure system can use same set of mask (comprising one or more mask) by platform the graphical information of mask to be transferred on the photorefractive crystal; In actual wafer is produced; Only need with reference light wave will write down and photorefractive crystal in the mask information regeneration to wafer, both can accomplish exposure process to wafer.Therefore; In actual wafer is produced; After only need transferring to the graphical information of a cover mask on the photorefractive crystal of each exposure machine, just can not have many exposure machines of assurance of mask and produce simultaneously, realized the purpose of many same set of mask of no mask exposure system share.And in the prior art in order to keep every exposure machine production; All need be furnished with number cover mask to every exposure machine; Relatively and prior art; Use no mask exposure of the present invention system, many no mask exposure systems can public same set of mask, thereby greatly reduces because the mask expenses of using many cover mask to bring.
Description of drawings
Fig. 1 is a no mask exposure entire system structural representation in one embodiment of the invention;
Fig. 2 is a beam expanding lens structural representation in one embodiment of the invention;
Fig. 3 is a collimating mirror structural representation in one embodiment of the invention;
Fig. 4 is a fourier transform lens structural representation in one embodiment of the invention;
Fig. 5 is an imaging lens structure synoptic diagram in one embodiment of the invention;
Fig. 6 is a wafer support structural representation in one embodiment of the invention;
Fig. 7 is the structural representation of wafer in one embodiment of the invention.
Embodiment
In order to make the object of the invention, technical scheme and advantage are clearer, come further to elaborate below in conjunction with accompanying drawing.
Fig. 1 is a no mask exposure entire system structural representation in one embodiment of the invention.Said no mask exposure system comprises: LASER Light Source 1, half-wave plate 2, beam splitter 3, first variable optical attenuator 4, first electronic shutter 5, first catoptron 6, beam expanding lens 7, collimating mirror 8, mask bracing frame 9, fourier transform lens 10, photorefractive crystal 11, fixedly rotating disk 12, second catoptron 13, second variable optical attenuator 14, second electronic shutter 15, imaging len 16 and wafer support 17.
The light that said LASER Light Source 1 sends arrives said beam splitter 3 through said half-wave plate 2 backs, is divided into transmitted light beam T and folded light beam R through behind the said beam splitter 3; Said transmitted light beam T arrives said first catoptron 6 through said first variable optical attenuator 4 and said first electronic shutter 5 backs; Pass through said beam expanding lens 7 and said collimating mirror 8 again, arrive said photorefractive crystal 11 through said mask bracing frame 9 and said fourier transform lens 10 again; Said folded light beam R is through behind said second catoptron 13; Arrive said photorefractive crystal 11 through said second variable optical attenuator 14 and said second electronic shutter 15 backs again; After said smooth flanging crystal 11, also be placed with said imaging len 16 and the said wafer support 17 that is used to place wafer, the back focus of the front focus of said imaging len 16 and said fourier transform lens 10 overlaps.
Said LASER Light Source can be solid state laser, gas laser, and any one in the semiconductor laser can be single laser instrument, also can be the laser instrument that forms of a plurality of laser instruments combination any one; Can be visible laser, also can be the invisible light laser instrument, and the present invention will not limit this.
Below in conjunction with Fig. 1 to Fig. 6 no mask exposure of the present invention system is described in more detail.
At first, the laser beam of the vertical polarization that said LASER Light Source 1 sends is transformed into the laser beam of horizontal polarization behind half-wave plate 2.Polarization direction through said half-wave plate 2 back laser is identical with the e optical axis of photorefractive crystal 11.The wavelength of the correspondence of said half-wave plate 2 is identical with the centre wavelength of said LASER Light Source 1, and half-wave plate 2 is placed perpendicular to the laser beam direction, and the optical axis of half-wave plate 2 becomes miter angle with surface level simultaneously.Said half-wave plate 2 is 1mm～500mm with the distance range in said LASER Light Source 1 exit, and is preferred, and said half-wave plate 2 is 10mm～30mm with the distance range in said LASER Light Source 1 exit.Said half-wave plate 2 diameter ranges are 10mm～100mm, and preferred, half-wave plate 2 diameter ranges are 15mm～40mm.
Then, light beam is divided into transmitted light beam T and folded light beam R through beam splitter 3, and the beam intensity ratio of said one-tenth transmitted light beam T and folded light beam R is 1: 1.Said beam splitter 3 can be the sheet glass that is coated with beam splitting coating, also can be cube beam splitter that is bonded by two right-angle prism therebetween one deck beam splitting coatings.Beam splitting coating through in the adjustment beam splitter 3 can be realized the adjustment to the beam intensity ratio of said transmitted light beam and folded light beam.Distance range between said beam splitter 3 and the said half-wave plate 2 is 5mm～500mm, and is preferred, and said beam splitter 3 is 10mm～30mm from the distance between the half-wave plate 2.
Then, said transmitted light beam T through behind first electronic shutter 5, arrives first catoptron 6 again through first variable optical attenuator 4.Can make the light path of transmitted light beam T that 90 ° of turnovers take place through said first catoptron 6, guarantee the compactness in the whole space of said no mask exposure system according to this.Said first variable optical attenuator 4 can continuously change the light intensity of said transmitted light beam T.Whether open the path of said transmitted light beam T, can realize through whether opening said first electronic shutter 5.The position of said first variable optical attenuator 4 and first electronic shutter 5 can exchange each other.The diameter dimension scope of said first variable optical attenuator 4 is 5mm～100mm, and preferred, the diameter dimension scope of first variable optical attenuator 4 is 1 5mm～40mm.Said first catoptron 6 is a broadband deielectric-coating high reflection mirror, to visible light and ultraviolet light are had highly reflective.Said first catoptron 6 is from the distance range 10mm～1000mm between the said beam splitter 3, and is preferred, and said first catoptron 6 is from the distance range 50mm～100mm between the said beam splitter 3.
Then, said transmitted light beam T is through behind beam expanding lens 7 and the collimating mirror 8, become the parallel transmitted light beam T/ that is complementary with the mask size/.Fig. 2 is a beam expanding lens structural representation in one embodiment of the invention, and said beam expanding lens 7 is the aplanasia biconcave lens.Transmitted light beam T is transformed into the divergent beams with certain pore size angle through behind the beam expanding lens 7.Fig. 3 is a collimating mirror structural representation in one embodiment of the invention, and the distance between said collimating mirror 8 and the said beam expanding lens 7 is decided by the focal length of selected lens, and the front focus of the front focus of said collimating mirror 8 and said beam expanding lens 7 overlaps.Said collimating mirror 8 is used with said beam expanding lens 7, can with transmitted light beam T become parallel transmitted light beam T//, and can realize amplifying in proportion light beam.The focal length of adjustment collimating mirror 8 or beam expanding lens 7 can adjust parallel transmitted light beam T//spot size.The diameter range of said beam expanding lens 7 is 5mm～30mm, and the focal range of beam expanding lens 7 is 5mm～100mm.Preferably, the diameter range of described beam expanding lens 7 is 10mm～20mm, and the focal range of said beam expanding lens 7 is 10mm～50mm.The diameter range of said collimating mirror 8 is 20mm～200mm, and the focal range of said collimating mirror 8 is 30mm～500mm.Preferably, the diameter range of said collimating mirror 8 is 20mm～100mm, and the focal range of said collimating mirror 8 is 30mm～300mm.
Then, after parallel transmitted light beam T//process is fixed on the first mask M1 on the mask support 9, the graphical information of the first mask M1 can append to said parallel transmitted light beam T//on.Describe for ease, call thing light wave Ψ to the parallel transmitted light beam that carries the first mask M1 graphical information
oSaid thing light wave Ψ
oContinue to propagate through behind the Fourier variation lens 10, the Fourier that on the back focal plane of Fourier variation lens 10, forms first mask changes spectrum.Fig. 4 is a fourier transform lens structural representation in one embodiment of the invention, and said fourier transform lens 10 is achromatic cemented doublet.Be placed with at the back focal plane that said Fourier changes lens 10 and be fixed in the fixedly photorefractive crystal 11 on the rotating disk 12 of photorefractive crystal.Said fixedly rotating disk 12 can be realized carrying said photorefractive crystal 11 and rotate continuously by angle under the drive of motor.The diameter range of said fourier transform lens 8 is 20mm～200mm, and its focal range is 30mm～500mm.Preferably, the diameter range of described fourier transform lens 10 is 30mm～100mm, and the focal range of fourier transform lens is 30mm～300mm.Distance range between said fourier transform lens 10 and the said collimating mirror 8 is 5mm～1000mmm.Preferably, the distance range between said fourier transform lens 10 and the said collimating mirror 8 is 10mm～50mmm.
After the folded light beam R that produces behind the beam splitter 3 is through second catoptron 13, do not carry the folded light beam of any information and cross second variable optical attenuator 14 through R, arrive photorefractive crystals 11 places through second electronic shutter, 15 backs again.For convenience, call reference light wave Ψ to the folded light beam of not carrying any information through R
RSaid second variable optical attenuator 14 can continuously change said reference light wave Ψ
RLight intensity.Whether open said reference light wave Ψ
RPath, can realize through whether opening said second electronic shutter 15.The position of said second variable optical attenuator 14 and second electronic shutter 15 can exchange, and second variable optical attenuator 14 and second electronic shutter 15 also can be positioned at the front of said second catoptron 13 simultaneously.The diameter dimension scope of said second variable optical attenuator 4 is 5mm～100mm, and preferred, the diameter dimension scope of second variable optical attenuator 14 is 15mm～40mm.Said second catoptron 13 is a broadband deielectric-coating high reflection mirror, and visible light and ultraviolet light are had highly reflective.Distance range 10mm～1000mm between said second catoptron 13 and the said beam splitter 3, preferred, the distance range 50mm～100mm between said second catoptron 13 and the said beam splitter 3.
After catoptron 13 reflections, do not carry the reference light wave Ψ of any information
RArrive photorefractive crystal 11 places, with the thing light wave Ψ that carries the first mask M1 graphical information
oInterfere, in said photorefractive crystal 11, form interference pattern, interference pattern also can carry the graphical information of said first mask.In order to guarantee the record effect of 11 pairs of said conoscope images of photorefractive crystal, guarantee said thing light wave Ψ
oWith reference light wave Ψ
RThe said photorefractive material of common irradiation reaches the regular hour, and irradiation time is difference with the different crystal material.Said thing light wave Ψ
oWith reference light wave Ψ
RCommon irradiation is after said 11 duration of photorefractive material, scope was 10Sec～10min, and the graphical information of said first mask just can be recorded in the photorefractive crystal 11.In order to guarantee reference light wave Ψ
RWith thing light wave Ψ
oStable interference effect can take place at said photorefractive crystal 11 places; The optical path distance of said transmitted light beam T from said beam splitter 3 to said photorefractive crystal 11 will equate with the optical path distance of said folded light beam R from said beam splitter 3 to said photorefractive crystal 11, while reference light wave-wave Ψ
RWith thing light wave Ψ
oThe light intensity ratio want suitably.Adjust said first variable optical attenuator 4 and can adjust thing light wave Ψ
oLight intensity, adjust said second variable optical attenuator 14 and can adjust reference light wave Ψ
RLight intensity.Arrive the thing light wave Ψ at said photorefractive crystal 11 places
oWith reference light wave Ψ
RThe light intensity proportional range be 1: 3-1: 15.
Said photorefractive crystal 11 adopts photorefractive material to process, and photorefractive material is any one among LiBbO3, BaTiO3, SBN, the KNSBN.Because photorefractive material is when receiving illumination; The spatial modulation that its refractive index can receive light intensity can produce and the corresponding index distribution of light intensity space distribution; So said photorefractive crystal 11 can be recorded as the index distribution in the photorefractive crystal 11 with the interference pattern that carries the said first mask plate patterns information, the graphical information of so far said first mask just changes into the first mask hologram image that carries first mask, 1 graphical information of index distribution in the said photorefractive crystal 11.Photorefractive material has angular selectivity, and each angle can both write down a width of cloth hologram image, first angle of the photorefractive crystal 11 that the therefore said first mask hologram image that carries the first mask plate patterns information is corresponding unique.
Adopt above-mentioned same method; Said first mask is replaced with second mask; Rotate said fixedly rotating disk 12 said photorefractive crystal 11 is rotated to second angle; Like this, can in said photorefractive crystal 11, form the second mask hologram image of the second mask plate patterns information of carrying, second angle of the photorefractive crystal 11 that the second mask hologram image is corresponding unique.The rest may be inferred, can write down the hologram image of i mask in the said photorefractive crystal 11, the i angle of the photorefractive crystal 11 that each i mask hologram image is corresponding unique, and wherein i is the natural number greater than 1.In semi-conductive manufacture process, said mask can be the employed mask of each time exposure.Because said photorefractive crystal 11 each angle can both write down a width of cloth hologram image; Differential seat angle between per two angles depends on the angular resolution with said fixedly rotating disk 12; If fixedly rotating disk 12 has sufficiently high angular resolution, the quantity of the mask that said photorefractive crystal 11 can write down can reach magnanimity.With respect to the magnanimity record amount of photorefractive crystal, the quantity of employed all mask is a very little number in the semiconductor production.Therefore, use a photorefractive crystal can cover all mask in the semiconductor production process fully, the angle of the corresponding photorefractive crystal of each piece mask.
Fig. 5 is an imaging lens structure synoptic diagram in one embodiment of the invention, and said imaging len 16 can be the single lens with imaging function, also can be the combination of a plurality of lens.Wafer support structural representation in Fig. 6 one embodiment of the invention, said wafer support 17 have two wafer orientation nail 18, and said wafer orientation nail 18 is fixed in wafer on the wafer support 17.Fig. 7 is the structural representation of wafer in one embodiment of the invention, and the wafer 19 that is positioned over wafer support 17 has two grooves 20 following closely 18 correspondence positions with said wafer orientation.After said groove 20 made that said wafer 19 is positioned over said wafer support 17, groove 20 positions of wafer were just in time corresponding with the position of wafer orientation nail 18, guarantee that with this wafer that at every turn is positioned over wafer support 17 can both be positioned same position.The size of said eyeglass bracing frame 17 is by the decision of the size of the wafer of required exposure, can be 2 inches, 4 inches, 6 inches, 8 inches etc.
Said mask bracing frame 9 is between said collimating mirror 8 and said fourier transform lens 10, and said photorefractive crystal 11 is positioned on the back focal plane of fourier transform lens 10, and said wafer support 17 is positioned at after the imaging len.The back focal plane of the front focal plane of said imaging len 16 and said fourier transform lens 10 overlaps.The image conjugate relation is satisfied in the position of said mask bracing frame 9 and said wafer support 17.
A kind of exposure method that adopts no mask exposure of the present invention system comprises: holographic recording step and step of exposure, the detailed process of each step is described respectively below.
The holographic recording step: the light that said LASER Light Source 1 sends arrives said beam splitter 3 through said half-wave plate 2 backs, is divided into transmitted light beam T and folded light beam R through behind the said beam splitter 3; Said transmitted light beam T arrives said first catoptron 6 through said first variable optical attenuator 4 and said first electronic shutter 5 backs; Pass through said beam expanding lens 7 and said collimating mirror 8 again; Arrive the photorefractive crystal 11 that is placed on the n angle through n mask on the said mask bracing frame 9 and said fourier transform lens 10 again, said transmitted light beam T becomes the thing light wave Ψ that carries said n mask pattern information
oSaid folded light beam R arrives said photorefractive crystal 11 through said second variable optical attenuator 14 and said second electronic shutter 15 backs again through behind said second catoptron 13, and said folded light beam R becomes the reference light wave Ψ that does not carry any information
R, the said thing light wave Ψ that carries said n mask pattern information
oWith reference light wave Ψ
R11 places interfere at said photorefractive crystal, in said photorefractive crystal 11, form and carry the interference pattern of said n mask pattern information.
Step of exposure: said first electronic shutter 5 is set to normally off, closes the path of said transmitted light beam T; Rotate said photorefractive crystal 11 to said predetermined angle theta; Said second electronic shutter 15 is opened, to open the path of said folded light beam R; Reference light wave Ψ
RArrive said photorefractive crystal 11; Angle initialization is reproduced out through behind the imaging len 16 in the image information of the n mask of photorefractive crystal 11 records of n angle; The wafer on the wafer support 17 is fixed in arrival, thereby realizes said wafer is carried out and n mask corresponding exposure.Behind the end exposure, close said second electronic shutter 15, close the path of said folded light beam R after, the exposure of preparing next wafer.
In sum; Use no mask exposure provided by the present invention system; Through thing light wave and reference light wave interference; The image information of mask can be recorded in the hologram image in the photorefractive crystal, through closing thing light wave path, by reference light wave said hologram image is rendered on the wafer then.An angle of the corresponding photorefractive crystal of the hologram image of each mask is rotated fixedly rotating disk rotation photorefractive crystal to a specific angle of photorefractive crystal so simultaneously, just can realize the exposure process of specific mask.Accomplish in the exposure process to wafer at reference light wave, need not mask, just can realize exposure wafer.Because photorefractive crystal has the registering capacity of magnanimity, use a photorefractive crystal just can cover all mask in the semiconductor production process fully.With this; Exposure machine for no mask exposure system can use same set of mask (comprising several mask) by platform the graphical information of mask to be transferred on the photorefractive crystal; In actual wafer is produced; Only need with reference light wave will write down and photorefractive crystal in the mask information regeneration to wafer, both can accomplish exposure process to wafer.Therefore; In actual wafer is produced; After only need transferring to the graphical information of a cover mask on the photorefractive crystal of each exposure machine, just can not have many exposure machines of assurance of mask and produce simultaneously, realized the purpose of many same set of mask of no mask exposure system share.And in the prior art in order to keep every exposure machine production; All need be furnished with number cover mask to every exposure machine; Relatively and prior art; Use no mask exposure of the present invention system, many no mask exposure systems can public same set of mask, thereby greatly reduces because the mask expenses of using many cover mask to bring.Therefore significantly reduced mask quantity, reduced because use the expense of the mask of bringing of many cover mask.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these revise and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these change and modification.
Claims (20)
1. a no mask exposure system comprises: LASER Light Source, half-wave plate, beam splitter, first variable optical attenuator, first electronic shutter, first catoptron, beam expanding lens, collimating mirror, the mask bracing frame that is used for fixing mask, fourier transform lens, photorefractive crystal, second catoptron, second variable optical attenuator, second electronic shutter, imaging len and wafer support; The laser that said LASER Light Source sends is divided into transmitted light beam and folded light beam through arriving said beam splitter behind the said half-wave plate through behind the said beam splitter; Arrive said first catoptron behind said transmitted light beam said first variable optical attenuator of process and said first electronic shutter; Pass through said beam expanding lens and said collimating mirror again, arrive said photorefractive crystal through said mask bracing frame and said fourier transform lens again; Said folded light beam is through behind said second catoptron; Again through arriving said photorefractive crystal behind said second variable optical attenuator and said second electronic shutter; After said smooth flanging crystal, also be placed with said imaging len and the said wafer support that is used to place wafer, the front focus of said imaging len and the back focus of said fourier transform lens overlap.
2. no mask exposure as claimed in claim 1 system is characterized in that, and is identical with the e optical axis of said photorefractive crystal through the polarization direction of laser behind the said half-wave plate.
3. no mask exposure as claimed in claim 2 system is characterized in that said half-wave plate is placed perpendicular to said laser beam direction, and said half-wave plate optical axis becomes miter angle with surface level simultaneously.
4. no mask exposure as claimed in claim 1 system; It is characterized in that; The transmitted light beam that said mask bracing frame of process and said fourier transform lens arrive said photorefractive crystal is the thing light wave; Folded light beam through arriving said photorefractive crystal behind said second variable optical attenuator and said second electronic shutter is a reference light wave, and the duration scope of the said photorefractive material of the common irradiation of said thing light wave and reference light wave is 10Sec～10min.
5. no mask exposure as claimed in claim 4 system is characterized in that the light intensity proportional range of said thing light wave and said reference light wave is 1: 3-1: 15.
6. no mask exposure as claimed in claim 1 system is characterized in that said photorefractive crystal is processed by photorefractive material.
7. no mask exposure as claimed in claim 6 system is characterized in that, said photorefractive material is a kind of among LiBbO3, BaTiO3, SBN, the KNSBN.
8. no mask exposure as claimed in claim 1 system is characterized in that, also comprises a fixing rotating disk, and said fixedly rotating disk is in order to fixing said photorefractive crystal.
9. no mask exposure as claimed in claim 1 system is characterized in that said photorefractive crystal is positioned on the back focal plane of said fourier transform lens.
10. no mask exposure as claimed in claim 1 system is characterized in that said wafer support has two wafer orientation nails, and said wafer orientation nail is fixed in wafer on the wafer support and makes said wafer orientation in same position.
11. no mask exposure as claimed in claim 1 system is characterized in that the image conjugate relation is satisfied in the position of said mask bracing frame and said wafer support.
12. no mask exposure as claimed in claim 1 system; It is characterized in that; Said half-wave plate is 1mm～500mm from the distance range of said LASER Light Source outlet, and said half-wave plate diameter range is 10mm～100mm, and the distance range between said beam splitter and the said half-wave plate is 5mm～500mm.
13. no mask exposure as claimed in claim 1 system is characterized in that the diameter dimension scope of said first variable optical attenuator is 5mm～100mm.
14. no mask exposure as claimed in claim 1 system is characterized in that the distance range 10mm～1000mm between said first catoptron and the said beam splitter.
15. no mask exposure as claimed in claim 1 system is characterized in that said beam expanding lens is the aplanasia biconcave lens, the front focus of said collimating mirror and the front focus of said beam expanding lens overlap.
16. no mask exposure as claimed in claim 1 system; It is characterized in that; The diameter range of said beam expanding lens is 5mm～30mm; The focal range of said beam expanding lens is 5mm～100mm, and the diameter range of said collimating mirror is 20mm～200mm, and the focal range of said collimating mirror is 30mm～500mm.
17. no mask exposure as claimed in claim 1 system is characterized in that said fourier transform lens is achromatic cemented doublet.
18. no mask exposure as claimed in claim 1 system; It is characterized in that; The diameter range of described fourier transform lens is 20mm～200mm; The focal range of said fourier transform lens is 30mm～500mm, and the distance range between said fourier transform lens and the said collimating mirror is 5mm～1000mmm.
19. no mask exposure as claimed in claim 1 system is characterized in that the diameter dimension scope of said second variable optical attenuator is 5mm～100mm, the distance range 10mm～1000mm between said second catoptron and the said beam splitter.
20. a no mask exposure method is characterized in that, comprising:
The holographic recording step: the light that LASER Light Source sends arrives beam splitter through behind the half-wave plate, is divided into transmitted light beam and folded light beam through behind the said beam splitter; Said transmitted light beam arrives said first catoptron after through first variable optical attenuator and first electronic shutter; Pass through beam expanding lens and collimating mirror again; Arrive the photorefractive crystal that is placed on predetermined angular through mask on the mask bracing frame and fourier transform lens again, said transmitted light beam becomes the thing light wave of the graphical information of carrying said mask; Said folded light beam through second catoptron after; Again through arriving said photorefractive crystal behind second variable optical attenuator and second electronic shutter; Said folded light beam becomes the reference light wave that does not carry any information; Said thing light wave and reference light wave interfere at said photorefractive crystal place, in said photorefractive crystal, form and carry the interference pattern of said mask plate patterns information;
Step of exposure: said first electronic shutter is set to normally off, closes the path of said transmitted light beam; Rotate said photorefractive crystal to said predetermined angular; Said second electronic shutter is opened, to open the path of said folded light beam; Reference light wave reproduces said mask plate patterns information after arriving said photorefractive crystal, through behind the imaging len, said mask plate patterns information is imaged on the wafer that is fixed on the wafer support, thereby realizes the exposure to said wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210121376.9A CN102621827B (en) | 2012-04-23 | 2012-04-23 | Maskless exposure system and exposure method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210121376.9A CN102621827B (en) | 2012-04-23 | 2012-04-23 | Maskless exposure system and exposure method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN102621827A true CN102621827A (en) | 2012-08-01 |
| CN102621827B CN102621827B (en) | 2014-03-12 |
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| CN201210121376.9A Expired - Fee Related CN102621827B (en) | 2012-04-23 | 2012-04-23 | Maskless exposure system and exposure method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115598146A (en) * | 2022-11-01 | 2023-01-13 | 武汉高芯科技有限公司（Cn） | A crystal dislocation testing device and method |
| CN115963701A (en) * | 2021-10-09 | 2023-04-14 | 中山新诺科技股份有限公司 | Exposure system and photoetching machine |
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| CN2351773Y (en) * | 1998-06-09 | 1999-12-01 | 中国科学院光电技术研究所 | Holographic lithography system |
| JP2002182547A (en) * | 2000-12-14 | 2002-06-26 | Institute Of Tsukuba Liaison Co Ltd | Hologram and method for producing the same |
| US20080176145A1 (en) * | 2006-05-30 | 2008-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing holographic recording medium and method for manufacturing semiconductor device |
| CN101290781A (en) * | 2008-06-18 | 2008-10-22 | 北京工业大学 | Fast readout system and method for holographic data storage |
| CN202512361U (en) * | 2012-04-23 | 2012-10-31 | 杭州士兰明芯科技有限公司 | Mask-free exposure system |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2351773Y (en) * | 1998-06-09 | 1999-12-01 | 中国科学院光电技术研究所 | Holographic lithography system |
| JP2002182547A (en) * | 2000-12-14 | 2002-06-26 | Institute Of Tsukuba Liaison Co Ltd | Hologram and method for producing the same |
| US20080176145A1 (en) * | 2006-05-30 | 2008-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing holographic recording medium and method for manufacturing semiconductor device |
| CN101290781A (en) * | 2008-06-18 | 2008-10-22 | 北京工业大学 | Fast readout system and method for holographic data storage |
| CN202512361U (en) * | 2012-04-23 | 2012-10-31 | 杭州士兰明芯科技有限公司 | Mask-free exposure system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115963701A (en) * | 2021-10-09 | 2023-04-14 | 中山新诺科技股份有限公司 | Exposure system and photoetching machine |
| CN115598146A (en) * | 2022-11-01 | 2023-01-13 | 武汉高芯科技有限公司（Cn） | A crystal dislocation testing device and method |
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| CN102621827B (en) | 2014-03-12 |
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