CN102620843B - Chip over-temperature monitor - Google Patents
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Abstract
本发明提供了一种芯片过温监测器，包括：温度感测单元、参考信号单元、比较单元、以及输出单元；所述输出单元的第二输出端与参考信号单元的反馈信号输入端连接，输出一反馈信号至参考信号单元，控制参考信号单元根据比较单元的反馈信号的值来确定输出第一或第二参考信号至比较单元的第二输入端，从而实现超温保护点和降温启动点之间的迟滞效应。本发明的优点在于，采用了从输出单元至参考信号单元的反馈机制，有效避免了芯片在温度上下波动的情况下，频繁发生超温报警，影响芯片正常工作。
The present invention provides a chip overtemperature monitor, comprising: a temperature sensing unit, a reference signal unit, a comparison unit, and an output unit; the second output end of the output unit is connected to the feedback signal input end of the reference signal unit, Output a feedback signal to the reference signal unit, control the reference signal unit to determine the output of the first or second reference signal to the second input terminal of the comparison unit according to the value of the feedback signal of the comparison unit, so as to realize the over-temperature protection point and the cooling start point hysteresis effect between. The invention has the advantage of adopting a feedback mechanism from the output unit to the reference signal unit, which effectively avoids frequent over-temperature alarms and affects normal operation of the chip when the chip fluctuates up and down in temperature.
Description
Technical field
The invention relates to a kind of chip excess temperature monitor, particularly a kind ofly can realize protecting a little and the start-up point has the chip excess temperature monitor of hesitation.
Background technology
Integrated circuit (IC) chip is a kind of electronic component with high electricity precision, so very responsive to environment temperature during chip operation.The too high meeting of environment temperature causes that the duty of some element changes in the chip, causes the chip can't normal storage or deal with data.So need a kind of chip excess temperature monitoring device especially, whether temperature that can chip monitoring is too high, and sends signal when exceeding design temperature, and the notice chip carries out the protectiveness operation, avoids meeting accident.
Chip excess temperature monitor of the prior art is normally set a monitoring temperature.When chip surpassed this monitoring temperature, chip excess temperature monitor sent an overheat protector signal and gives the chip controls unit, notified the chip break-off or implemented other safeguard measures; When chip temperature is lower than this monitoring temperature, send a de-preservation signal again and give the chip controls unit, notify it to begin operate as normal.
The shortcoming of above-mentioned technology is, fluctuates at the monitoring temperature of setting just as the temperature of fruit chip, can cause the excess temperature monitor to send the overheat protector signal frequently and the chip controls unit is given in the overheat protector ring off signal, causes the chip frequent movement.This will make the life-span of chip seriously reduce, and have influence on the device of this chip of use or the work efficiency of system.
Therefore, can design and a kind ofly realize protecting a little and the start-up point has the chip excess temperature monitor of hesitation, be the prior art problem demanding prompt solution.
Summary of the invention
Technical matters to be solved by this invention is, a kind of chip excess temperature monitor is provided, and can realize the hesitation between overheat protector point and the cooling start-up point.
In order to address the above problem, the invention provides a kind of chip excess temperature monitor, comprising: temperature sensing unit, the output signal of described temperature sensing unit vary with temperature and are the consistance variation; Reference signal unit, the output signal of described reference signal unit vary with temperature and are consistance and change, and the changing in the opposite direction of this change direction and described temperature sensing unit, and perhaps the output signal of described reference signal unit does not vary with temperature; Comparing unit, described comparing unit has the first input end that is connected with described temperature sensing unit, with second input end that is connected with reference signal unit, and an output terminal, described comparing unit can be exported a signal according to the comparative result to the value of first input end and second input end; Output unit; the input end of described output unit is connected with the output terminal of comparing unit; first output terminal of described output unit is exported a monitor signal to outside; second output terminal of described output unit is connected with the feedback signal input end of reference signal unit; export a feedback signal to reference signal unit; the control reference signal unit is determined output first or second reference signal to second input end of comparing unit according to the value of the feedback signal of comparing unit, thereby realizes the hesitation between overtemperature prote point and the cooling start-up point.
Optionally, described temperature sensing unit comprises one first current source and a triode, the output terminal of described first current source is connected with the emitter of triode, the base stage of described triode is connected and ground connection altogether with collector, and the output terminal of described temperature sensing unit is the common link of first current source and transistor emitter.
Optionally, described reference signal unit comprises one second current source, one first resistance, one second resistance and a control transistor, the output terminal of described second current source is connected to first end of first resistance, second end of described first resistance is connected to first end of second resistance, the second end ground connection of described second resistance, the transistorized source electrode of described control and drain electrode are connected to first end and second end of second resistance respectively; The output terminal of described reference signal unit is the common link of second current source and first resistance, first end, and the feedback signal input end of described reference signal unit is the transistorized grid of described control.
Optionally, described comparing unit is a comparer, and first, second input end of described comparing unit and output terminal are respectively negative, positive input end and the output terminal of described comparer.
Optionally, described output unit comprises first reverser and second reverser, and the output terminal of described first reverser is connected to the input end of second reverser; The input end of described output unit is the input end of first reverser, first output terminal of described output unit is the output terminal of described second reverser, and second output terminal of described output unit is the common link of the input end of the output terminal of described first reverser and second reverser.
The invention has the advantages that, adopted the feedback mechanism from output unit to reference signal unit, after chip temperature is increased to the temperature alarming threshold value, along with the output unit output alarm signal, and feed back to the reference signal value that reference signal unit is adjusted latter output simultaneously, make temperature sensing unit in the chip temperature-fall period, be reduced to another temperature that is lower than temperature when discharging threshold value until chip temperature, just cancel the overtemperature alarm of chip, thereby effectively avoided chip under the situation that temperature fluctuates up and down, the frequent overtemperature alarm that takes place influences the chip operate as normal.
Description of drawings
Fig. 1 is described to be the structured flowchart of the described chip excess temperature of the specific embodiment of the present invention monitor.
Fig. 2 is a kind of circuit structure diagram of structured flowchart shown in Figure 1.
Embodiment
Next introduce the embodiment of a kind of chip excess temperature monitor of the present invention by reference to the accompanying drawings in detail.
Fig. 1 is the structured flowchart of the described chip excess temperature of this embodiment monitor, comprising: temperature sensing unit 11, reference signal unit 12, comparing unit 13 and output unit 14.This excess temperature monitor is arranged on chip internal.
The output signal of described temperature sensing unit 11 varies with temperature and is the consistance variation.What is called varies with temperature and is the consistance variation, can be that consistance raises the perhaps conforming reduction with the rising of temperature to output signal with the rising of temperature.Which kind of trend no matter can be by comparing unit 13 and a reference signal to recently realizing monitoring temperature.Described output signal can be a level signal, also can be a current signal etc.
The output signal of described reference signal unit 12 varies with temperature and is consistance and changes, and the changing in the opposite direction of this change direction and described temperature sensing unit, and perhaps the output signal of described reference signal unit 12 does not vary with temperature.The output signal of reference signal unit 12 is to do contrast for the output signal of synthermal sensing cell 11, so both present different variation tendencies with temperature, more is conducive to improve the sensitivity that comparing unit 13 signal acquisitions change.The output signal of described reference signal unit 12 does not vary with temperature yet can realize monitoring temperature.
Described comparing unit 13 has the first input end that is connected with described temperature sensing unit 11, with second input end that is connected with reference signal unit 12, and an output terminal.Described comparing unit 13 can be exported a signal according to the comparative result to the value of first input end and second input end.For example when the output valve of temperature sensing unit 11 during greater than the output valve of reference signal unit 12, export a high level; Otherwise export a low level.
The input end of described output unit 14 is connected with the output terminal of comparing unit 13; first output terminal of described output unit 14 is exported a monitor signal to outside; second output terminal of described output unit 14 is connected with the feedback signal input end of reference signal unit 12; export a feedback signal value to reference signal unit 12; control reference signal unit 12 is determined output first or second reference signal to second input end of comparing unit 13 according to the value of the feedback signal of comparing unit 13, thereby realizes the hesitation between overtemperature prote point and the cooling start-up point.
Fig. 2 is a kind of circuit structure diagram of structured flowchart shown in Figure 1.
With reference to figure 2, temperature sensing unit 11 comprises one first current source I1 and a triode B1, the output terminal of described first current source 11 is connected with the emitter of triode B1, the base stage of described triode B1 is connected and ground connection altogether with collector, and the output terminal of described temperature sensing unit 11 is the common link of the first current source I1 and triode B1 emitter.In the present embodiment, the bias current that the first current source I1 provides has positive temperature coefficient (PTC), therefore, rising along with working temperature, the emitter of triode B1 is injected into bigger electric current, cause the junction voltage between base stage and the emitter more and more littler, so the output level of temperature sensing unit 11 reduce with the rising of temperature.
In other embodiment, also the first current source I1 can be arranged to negative temperature coefficient; Perhaps current source is replaced into temperature variant level source, B1 replaces to resistance with triode, and exports a temperature variant current signal.
Continuation is with reference to figure 2, and reference signal unit 12 comprises the second current source I2, first resistance R 1, second resistance R 2 and control transistor M1.The output terminal of described second current source 12 is connected to first end of first resistance R 1, second end of described first resistance R 1 is connected to first end of second resistance R 2, the second end ground connection of described second resistance R 2, the source electrode of described control transistor M1 and drain electrode are connected to first end and second end of second resistance R 2 respectively; The output terminal of described reference signal unit 12 is the common link of the second current source I2 and first resistance R, 1 first end, and the feedback signal input end of described reference signal unit 12 is the grid of described control transistor M1.In the present embodiment, the bias current that the first current source I1 provides has positive temperature coefficient (PTC), therefore, and along with the rising of working temperature, the electric current that flows through first resistance R 1 and second resistance R 2 raises, so the output level of reference signal unit 12 raises with the rising of temperature.
In other embodiment, if the first current source I1 of temperature sensing unit 11 is negative temperature coefficient, also should be arranged to negative temperature coefficient by the corresponding second current source I2 with reference signal unit 12; Perhaps current source is replaced into temperature variant level source, and exports a temperature variant current signal.
Moreover control transistor M1 is subjected to the FEEDBACK CONTROL of output unit 14 and opens or turn-off, can be with second resistance R, 2 short circuits when control transistor M1 opens.If the second current source I2 of reference signal unit 12 is negative temperature coefficient, also first resistance R 1 and second resistance R 2 can be designed to parallel connection, and will control the source electrode of transistor M1 and drain and be connected on the branch road of a certain resistance.
Continuation is with reference to figure 2, and comparing unit 13 is a comparer D1, and first, second input end of described comparing unit 13 and output terminal are respectively negative, positive input end and the output terminal of described comparer D1.When the level of the positive input terminal of comparer D1 was higher than the level of negative input end, comparer D1 exported a high level, otherwise exports a low level.
Continuation is with reference to figure 2, and output unit 14 comprises the first reverser U1 and the second reverser U2, and the output terminal of the described first reverser U1 is connected to the input end of the second reverser U2; The input end of described output unit 14 is the input end of the first reverser U1, first output terminal of described output unit 14 is the output terminal of the described second reverser U2, and second output terminal of described output unit 14 is the common link of the input end of the output terminal of the described first reverser U1 and the second reverser U2.
Next the basic functional principle of circuit shown in Figure 2 is made brief description.
In the time of in chip temperature is in normal range, the output level of temperature sensing unit 11 is higher than the output level of reference signal unit 12, comparer D1 exports a low level, the corresponding output of first output terminal of output unit 14 one low level, the corresponding output of second output terminal one high level is opened it to controlling transistor M1, second resistance R 2 is by short circuit, and the output voltage of reference signal unit 12 is first resistance R, 1 both end voltage.
When chip temperature raises, the output level of temperature sensing unit 11 reduces, the output level of reference signal unit 12 raises, to the moment of a certain temperature value T1, (this temperature value T1 can be by adjusting the output current value of the first current source I1 and the second current source I2 when beginning to be lower than the output level of reference signal unit 12 corresponding to the output level of temperature sensing unit 11, and the resistance value of first resistance R 1 wait accurately set), counter-rotating takes place and exports a high level in comparer D1, the corresponding output of first output terminal of output unit 14 one high level is informed chip overtemperature to outside.And meanwhile, the corresponding output of second output terminal of output unit 14 one low level is closed it to controlling transistor M1, second resistance R 2 comes back in the circuit and connects with first resistance R 1, with the output voltage of reference signal unit 12 raise first resistance R 1 and both end voltage after second resistance R 2 is connected, the output voltage values of the reference signal unit 12 that namely raise.
When chip temperature was reduced to temperature T 1 again, because the output voltage values of reference signal unit 12 raises, the output level of temperature sensing unit 11 still was lower than the output level of reference signal unit 12, so comparer D1 does not overturn.When chip temperature continued to be reduced to another temperature T 2 that is lower than temperature T 1, temperature sensing unit 11 was increased to and is higher than reference signal unit 12, and comparer D1 just overturns, then output low level is removed and sent overtemperature alarm to chip.
By above narration as can be seen, owing to adopted from output unit 14 to reference signal unit 12 feedback mechanism, after chip temperature is increased to temperature T 1, along with output unit 14 output alarm signals, and feed back to the reference signal value that reference signal unit 12 is adjusted latter output simultaneously, make temperature sensing unit 11 in the chip temperature-fall period when chip temperature is reduced to another temperature T 2 that is lower than temperature T 1, just remove the overtemperature alarm of chip, thereby effectively avoided chip under the situation that temperature T 1 fluctuates up and down, the frequent overtemperature alarm that takes place influences the chip operate as normal.
In sum; though the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention; the persond having ordinary knowledge in the technical field of the present invention; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking the claim person of defining that claims apply for.
Claims (5)
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| CN201210114277.8A CN102620843B (en) | 2012-04-18 | 2012-04-18 | Chip over-temperature monitor |
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| CN201210114277.8A CN102620843B (en) | 2012-04-18 | 2012-04-18 | Chip over-temperature monitor |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106257372A (en) * | 2015-06-18 | 2016-12-28 | 中兴通讯股份有限公司 | Veneer excess temperature processing method and processing device |
| WO2018000123A1 (en) * | 2016-06-27 | 2018-01-04 | 张升泽 | Method and system for signal alarm for electronic chip |
| CN106644114B (en) * | 2017-01-06 | 2023-06-20 | 四川埃姆克伺服科技有限公司 | Temperature sensor signal processing circuit |
| CN109839218B (en) * | 2017-11-29 | 2021-08-10 | 北京兆易创新科技股份有限公司 | Testing device for temperature sensor |
| CN108446204B (en) * | 2018-03-30 | 2021-09-14 | 联想(北京)有限公司 | Chip and electronic equipment |
| CN109980599B (en) * | 2019-04-19 | 2021-04-13 | 中国电子科技集团公司第五十八研究所 | Over-temperature protection structure suitable for conventional CMOS (complementary metal oxide semiconductor) process |
| CN111289881A (en) * | 2020-03-30 | 2020-06-16 | 上海菲莱测试技术有限公司 | Chip reliability testing method, device, apparatus, system and storage medium |
| CN113063514A (en) * | 2021-02-22 | 2021-07-02 | 深圳阜时科技有限公司 | Temperature detection circuit, fingerprint chip module and electronic equipment |
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| JP4350458B2 (en) * | 2003-08-25 | 2009-10-21 | 株式会社鷺宮製作所 | Signal input device |
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| CN101159164A (en) * | 2006-10-06 | 2008-04-09 | 奇梦达北美公司 | Semiconductor device including multi-bit memory cell and temperature balance sensor |
| CN101666844A (en) * | 2008-09-01 | 2010-03-10 | 鸿富锦精密工业（深圳）有限公司 | Sensor detecting circuit |
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Owner name: SHANGHAI ADVANCED RESEARCH INSTITUTE, CHINESE ACAD Free format text: FORMER OWNER: SHANGHAI ZHONGKE INSTITUTE FOR ADVANCED STUDY Effective date: 20131012 |
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