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CN102605359A - 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺 - Google Patents

化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺 Download PDF

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Publication number
CN102605359A
CN102605359A CN2011101925171A CN201110192517A CN102605359A CN 102605359 A CN102605359 A CN 102605359A CN 2011101925171 A CN2011101925171 A CN 2011101925171A CN 201110192517 A CN201110192517 A CN 201110192517A CN 102605359 A CN102605359 A CN 102605359A
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CN
China
Prior art keywords
palladium
coating
gold
pad
copper wire
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Pending
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CN2011101925171A
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English (en)
Inventor
林明宏
刘昆正
李英杰
邱国宾
郭蔡同
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Taiwan Uyemura Co Ltd
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Taiwan Uyemura Co Ltd
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Priority claimed from TW100102660A external-priority patent/TW201233279A/zh
Priority claimed from TW100102661A external-priority patent/TW201233280A/zh
Application filed by Taiwan Uyemura Co Ltd filed Critical Taiwan Uyemura Co Ltd
Publication of CN102605359A publication Critical patent/CN102605359A/zh
Pending legal-status Critical Current

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Abstract

本发明提供化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺。此化学钯金镀膜，其位于一焊垫上，包含有一位于焊垫上的钯镀层；与一位于钯镀层上的金镀层。此化学钯金镀膜以及打线接合于金镀层上的铜线或钯铜线成为封装结构。本发明亦提供此化学钯金镀膜的制作方法以及此封装结构的封装工艺。本发明以钯镀层来取代已知镍层的使用，以提升铜或铜钯线与焊垫的打线接合强度。

Description

化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺
技术领域
本发明有关焊垫表面保护层，特别是化学钯金镀膜所成保护层，亦有关其制作方法。此外，本发明亦有关封装工艺及其结构，特别是铜线或钯铜线的封装工艺及其结构。 
背景技术
在晶圆、液晶显示器基板、陶瓷基板、铝基板、IC载板与印刷电路板等电子工业零件的封装工艺上，需于构成电性连接的焊垫表面上形成一化镍金层，以提升打线与焊垫在焊接上的接合性与耐蚀性。但在焊垫上形成镍层后进行无电解镀金以形成金层时，镍与金的取代反应会对镍层中所析出粒子的粒界部分进行强烈的选择性攻击，导致金层下方形成残缺部分而产生蚀孔，相对的镍层将变的脆弱，在焊接时将无法确保充分的焊接接合强度。 
因此，化镍钯金工艺被提出，以经由钯层来解决金对镍强烈攻击现象，化镍钯金工艺虽然可以解决上述问题，但镍层的存在却导致硬度增加，使得后续无法顺利打线接合铜线或者铜钯线。 
有鉴于此，本发明针对上述已知技术的缺失，提出一种崭新的化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺，以有效克服上述的这些问题。 
发明内容
本发明的主要目的在于提供化学钯金镀膜结构及其制作方法，其能应用于较为低阶但线路密集度高的电子产品封装工艺上。 
本发明的另一目的在于提供化学钯金镀膜结构及其制作方法，本发明的结构及其制作方法没有使用镍层，能提升铜线或铜钯线与焊垫的接合可靠度，并可减低成 本。 
本发明的另一主要目的在于提供一种将上述化学钯金镀膜结构与铜线或钯铜线接合的封装结构及其工艺，本发明的结构及其制作工艺没有使用镍层，能提升铜线或铜钯线与焊垫的接合可靠度，并可减低成本。 
本发明的另一目的在于提供一种铜线或钯铜线的封装工艺及其结构，其能应用于较为低阶但线路密集度高的电子产品封装工艺上。 
本发明的另一目的在于提供铜线或钯铜线封装工艺产品一种可作业的新表面处理。
为达上述的目的，本发明提供一种化学钯金镀膜结构，其位于一焊垫上，此化学钯金镀膜包含有一位于焊垫上的钯镀层；以及一位于钯镀层上的金镀层。 
本发明还提供一种化学钯金镀膜的制作方法，包括提供一焊垫，于焊垫上形成一钯镀层，以及于钯镀层上形成一金镀层。较佳地，钯镀层为利用置换反应于焊垫上形成的置换型钯镀层，更佳地，再于置换型钯镀层上利用还原反应形成还原型钯镀层。较佳地，金镀层为利用置换型、还原型或者半置换半还原型反应于钯镀层上形成。 
本发明还提供另一种化学钯金镀膜的制作方法，包括提供一焊垫，使用一兼具触媒钯与化学钯效用的溶液同时进行置换与还原反应，以于焊垫上形成一钯镀层。最后，利用置换型、还原型或者半置换半还原型反应于钯镀层上形成一金镀层。 
本发明还提供一种上述化学钯金镀膜结构与铜线或钯铜线接合的封装结构，其包含有一焊垫；一位于焊垫上的钯镀层；一位于钯镀层上的金镀层；以及一打线接合于金镀层上的铜线或钯铜线。 
本发明还提供一种铜线或钯铜线的封装工艺，其步骤包含有先提供一焊垫；接续，于焊垫上形成一钯镀层；然后，于钯镀层上形成一金镀层；最后，于金镀层上打线接合一铜线或钯铜线。 
其中，上述的钯镀层可以是利用置换反应、或者置换反应与还原反应二阶段来形成，或者是使用单一溶液同步进行置换与还原反应所形成。 
下面将藉由具体实施例的详细说明，以便于更容易了解本发明的目的、技术内容、特点及其所达成的功效。 
在本发明说明中，除非另有不同表明，否则所有的量，包括用量、百分比、份 数、及比例，都理解以″约″字修饰，且各数量皆无意为任何有效位数的表示。 
除非另有不同表明，否则冠词“一”意图表示“一或多”。“包含”与“包括”等词意图作概括性表示，而且表示除所列成份、组件外还可有额外的成份、组件。 
附图说明
图1是本发明的化学钯金镀膜的第一种制作步骤流程图。 
图2是图1的步骤所制得的化学钯金镀膜的结构示意图。 
图3是本发明的化学钯金镀膜的第二种制作步骤流程图。 
图4是图3的步骤所制得的化学钯金镀膜的结构示意图。 
图5是本发明的化学钯金镀膜的第三种制作步骤流程图。 
图6是图5的步骤所制得的化学钯金镀膜的结构示意图。 
图7是本发明的铜线或钯铜线的封装结构的示意图。 
图8是本发明的铜线或钯铜线的封装工艺的第一种工艺步骤流程图。 
图9是图8的步骤所制得的铜线或钯铜线的封装结构示意图。 
图10是本发明的铜线或钯铜线的封装工艺的第二种工艺步骤流程图。 
图11是图10的步骤所制得的铜线或钯铜线的封装结构示意图。 
图12是本发明的铜线或钯铜线的封装工艺的第三种工艺步骤流程图。 
图13是图12的步骤所制得的铜线或钯铜线的封装结构示意图。 
主要组件符号说明： 
10：焊垫 
12：置换型钯镀层 
14：还原型钯镀层 
16：金镀层 
18：置换型/还原型钯镀层 
20：钯镀层 
30：封装结构 
32：铜线或钯铜线 
具体实施方式
本发明揭示一种化学钯金镀膜结构及其制作方法，其针对欲进行铜线或铜钯线封装工艺的焊垫表面进行表面处理，前述焊垫较佳为铜，以直接在焊垫表面依序形成一致密性高的钯镀层与一金镀层，在无使用镍层的情况下，增进后续铜线或铜钯线的打线接合强度。 
上述钯镀层可以是利用电化学反应所形成。钯镀层的材质可以是纯钯或者是钯磷合金。本发明的化学钯金镀膜结构的制作方法有下列三种： 
参阅图1，其是第一种制作方法的步骤流程图。首先如步骤S1所述，提供一焊垫10。接着，如步骤S2所述，进行置换反应于焊垫10表面形成一置换型钯镀层12。再如步骤S3所述，以还原反应增厚形成一位于置换型钯镀层12上的还原型钯镀层14。最后，如步骤S4所述，以置换型或还原型或半置换半还原型反应形成一覆盖于还原型钯镀层14上的金镀层16，形成如图2所示的结构。 
在此方式下，置换型钯镀层12加上还原型钯镀层14的厚度为0.03～0.2微米，亦可为0.03～0.07微米，较佳为0.06～0.12微米，亦佳为0.09～0.2微米；金镀层16的厚度为0.03～0.2微米，亦可为0.03～0.07微米，较佳为0.06～0.12微米，亦佳为0.09～0.2微米。 
参阅图3，其是第二种制作方法的步骤流程图。首先，如步骤S1所述，提供一焊垫10。接着，如步骤S12所述，利用单一溶液来进行作业，此溶液兼具触媒钯与化学钯效用，因此，可同时进行置换及还原反应于焊垫上形成一钯镀层18。最后，如步骤S13所述，再以置换型或还原型或半置换半还原型反应于钯镀层18上形成一金镀层16，形成如图4所示的结构。 
在此方式下，钯镀层的厚度为0.03～0.2微米，亦可为0.03～0.07微米，较佳为0.06～0.12微米，亦佳为0.09～0.2微米；金镀层的厚度为0.03～0.2微米，亦可为0.03～0.07微米，较佳为0.06～0.12微米，亦佳为0.09～0.2微米。 
参阅图5，其是第三种制作方法的步骤流程图。此方法相较于上述第一种方法，其实就是省略形成还原型钯镀层的步骤S3。第三种制作方法的步骤包括，如步骤S1所述，提供一焊垫10。接着，如步骤S2所述，先进行置换反应于焊垫10表面形成一置换型钯镀层12。再如步骤S23所述，以置换型或还原型或半置换半还原型反应形成一覆盖于置换型钯镀层12上的金镀层16，形成如图6所示的结构。 
在此方式下，置换型钯镀层12的厚度为0.03～0.2微米，亦可为0.03～0.07微米，较佳为0.06～0.12微米，亦佳为0.09～0.2微米；金镀层16的厚度为0.03～0.2微米，亦可为0.03～0.07微米，较佳为0.06～0.12微米，亦佳为0.09～0.2微米。 
上述三种制作方法各步骤的操作温度大约在25℃～95℃的范围，酸碱值约在pH 4～9之间。 
由上述的图2、4与6，可知本发明的化学钯金镀膜结构包含有一焊垫10；一位于焊垫上的钯镀层12及选择性的14，或者18；以及一位于此钯镀层上的金镀层16。 
参阅图7，其本是发明的铜线或钯铜线的封装结构示意图。如图所示，本发明的铜线或钯铜线的封装结构30，包含有一焊垫10，其材质可以为铜；一位于焊垫10上且紧邻焊垫10的钯镀层20；一位于钯镀层20上且紧邻钯镀层20的金镀层16；以及一接合于金镀层16上，以与焊垫10形成电性连接的铜线或者钯铜线32。 
上述的钯镀层20的厚度为0.03～0.2微米，亦可为0.03～0.07微米，较佳为0.06～0.12微米，亦佳为0.09～0.2微米；金镀层16的厚度为0.03～0.2微米，亦可为0.03～0.07微米，较佳为0.06～0.12微米，亦佳为0.09～0.2微米。 
在工艺上，本发明于欲进行铜线或铜钯线封装工艺的焊垫10表面先进行表面处理，以直接在焊垫10表面依序形成一致密性高的钯镀层20与一金镀层16，以在无使用镍层的情况下，增加接合于金镀层16上的铜线或铜钯线32的打线接合强度。 
本发明在形成钯镀层20与金镀层16时各步骤的操作温度大约在25℃～95℃的范围，酸碱值是在约pH4～9之间。 
本发明的铜线或钯铜线32的封装工艺可依照钯镀层20的制作方式进一步区分为下列三种： 
请参阅图8，其是第一种封装方法的步骤流程图，包括上述第一种化学钯金镀膜结构的制作方法步骤S1、步骤S2、步骤S3、步骤S4，以及，如步骤S5所述，于焊垫10上的金镀层16打线接合一铜线或钯铜线32，形成如图9所示的结构。 
在此方式下，钯镀层20是由一置换型钯镀层12与还原型钯镀层14所组合而成。 
请参阅图10，其是第二种封装方法的步骤流程图，包括上述第二种化学钯金 镀膜结构的制作方法步骤S1、步骤S12、步骤S13，以及，如步骤S14所述，于焊垫10的金镀层16上打线接合一铜线或钯铜线32，形成如图11所示的封装结构。 
请参阅图12，其是第三种封装方法的步骤流程图，包括上述第三种化学钯金镀膜结构的制作方法步骤S1、步骤S2、步骤S23，以及，如步骤S24所述，于焊垫10的金镀层16上打线接合一铜线或钯铜线32，形成如图13所示的结构。 
本发明经由使用钯镀层来取代镍层的存在，以避免镍存在时所产生的各种问题，提供铜线或者铜钯线封装工艺产品一种可作业的新表面处理。而且，本发明技术的最佳施行范例是应用于较为低阶但线路密集度高的电子产品封装工艺上。因为低阶电子产品所需的回焊次数较低，因此铜原子的移动较少，并不会大幅度地扩散至钯镀层内。此外，当组件整体体积缩小且线路密集度高时，焊垫体积也会缩小，而本发明无使用镍层的特性上，有利于铜焊垫与铜线或钯铜线的打线，不仅不会影响可靠度，更可减低成本。 
以上仅为本发明的较佳实施例而已，并非用来限定本发明实施的范围。故所有依本发明权利要求书所述的特征及精神所为的均等变化或修饰，均应包括在本发明的保护范围内。 

Claims (26)

1.一种化学钯金镀膜结构，其位于一焊垫上，该化学钯金镀膜包含有：
一钯镀层，其位于该焊垫上；以及
一金镀层，其位于该钯镀层上。
2.如权利要求1的化学钯金镀膜结构，其特征在于，该钯镀层是利用置换型或置换型搭配还原型反应所形成，该金镀层是置换型、还原型或者半置换半还原型反应所形成。
3.一种化学钯金镀膜的制作方法，其步骤包含有：
提供一焊垫；
利用置换反应于该焊垫上形成一置换型钯镀层；以及
利用置换型、还原型或者半置换半还原型反应于该置换型钯镀层上形成一金镀层。
4.如权利要求3的方法，其特征在于，该焊垫的材质为铜，该置换型钯镀层的材质是纯钯或者是钯磷合金。
5.如权利要求3的方法，其特征在于，其在温度为25℃～95℃，酸碱值为pH4～9进行。
6.如权利要求3的方法，其特征在于，该置换型钯镀层的厚度为0.03～0.2微米，该金镀层的厚度为0.03～0.2微米。
7.如权利要求3的方法，其特征在于，其应用于低阶但线路密集度高的电子产品封装工艺。
8.如权利要求3的方法，其特征在于，在形成该金镀层前还包括一利用还原反应于该置换型钯镀层上形成一还原型钯镀层的步骤。
9.如权利要求8的方法，其特征在于，该置换型钯镀层的厚度加上该还原型钯镀层的厚度为0.03～0.2微米，该金镀层的厚度为0.03～0.2微米。
10.一种化学钯金镀膜的制作方法，其步骤包含有：
提供一焊垫；
使用一兼具触媒钯与化学钯效用的溶液同时进行置换与还原反应，以于该焊垫上形成一钯镀层；以及
利用置换型、还原型或者半置换半还原型反应于该钯镀层上形成一金镀层。
11.如权利要求10的方法，其特征在于，该焊垫的材质为铜，该钯镀层的材质是纯钯或者是钯磷合金。
12.如权利要求10的方法，其特征在于，其于温度为25℃～95℃，酸碱值为pH 4～9进行。
13.如权利要求10的方法，其特征在于，该钯镀层的厚度为0.03～0.2微米，该金镀层的厚度为0.03～0.2微米。
14.如权利要求10的方法，其特征在于，其应用于低阶但线路密集度高的电子产品封装工艺。
15.一种铜线或钯铜线的封装结构，其包含有：
一焊垫；
一钯镀层，其位于该焊垫上；
一金镀层，其位于该钯镀层上；以及
一铜线或钯铜线，其打线接合于该金镀层上。
16.如权利要求15的封装结构，其特征在于，该焊垫的材质为铜，该钯镀层的材质为纯钯或者是钯磷合金。
17.如权利要求15的封装结构，其特征在于，该钯镀层包含有一置换型钯镀层与一还原型钯镀层。
18.如权利要求15的封装结构，其特征在于，该钯镀层的厚度为0.03～0.2微米，该金镀层的厚度为0.03～0.2微米。
19.一种铜线或钯铜线的封装工艺方法，其包含有下列步骤：
提供一焊垫；
于该焊垫上形成一钯镀层；
于该钯镀层上形成一金镀层；以及
于该金镀层上打线接合一铜线或钯铜线。
20.如权利要求19的方法，其特征在于，于该焊垫上形成该钯镀层的步骤还包括有：
利用置换反应于该焊垫上先形成一置换型钯镀层；以及
利用还原反应于该置换型钯镀层上形成一还原型钯镀层。
21.如权利要求19的方法，其特征在于，该焊垫的材质为铜，该钯镀层的材质为纯钯或者是钯磷合金。
22.如权利要求19的方法，其特征在于，形成该钯镀层与该金镀层的步骤于温度为25℃～95℃、酸碱值为pH 4～9进行。
23.如权利要求19的方法，其特征在于，该钯镀层的厚度为0.03～0.2微米，该金镀层的厚度为0.03～0.2微米。
24.如权利要求19的方法，其特征在于，于该焊垫上形成该钯镀层的步骤是使用一兼具触媒钯与化学钯效用的溶液同时进行置换与还原反应所达成。
25.如权利要求19的方法，其特征在于，该金镀层是利用置换型、还原型或者半置换半还原型反应所形成。
26.如权利要求19的方法，其特征在于，于该焊垫上形成该钯镀层的步骤是使用置换反应所达成。
CN2011101925171A 2011-01-25 2011-06-28 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺 Pending CN102605359A (zh)

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