CN102605333A - 高温环境下具有高激光损伤阈值氧化钽薄膜的制备方法 - Google Patents
高温环境下具有高激光损伤阈值氧化钽薄膜的制备方法 Download PDFInfo
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- CN102605333A CN102605333A CN2012100849264A CN201210084926A CN102605333A CN 102605333 A CN102605333 A CN 102605333A CN 2012100849264 A CN2012100849264 A CN 2012100849264A CN 201210084926 A CN201210084926 A CN 201210084926A CN 102605333 A CN102605333 A CN 102605333A
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910001936 tantalum oxide Inorganic materials 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 46
- 229910052786 argon Inorganic materials 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 238000010998 test method Methods 0.000 claims description 2
- 239000003921 oil Substances 0.000 claims 2
- 230000002000 scavenging effect Effects 0.000 claims 2
- 238000013507 mapping Methods 0.000 claims 1
- 238000006213 oxygenation reaction Methods 0.000 claims 1
- 238000002791 soaking Methods 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 63
- 239000010409 thin film Substances 0.000 abstract description 30
- 238000001659 ion-beam spectroscopy Methods 0.000 abstract description 9
- 230000009977 dual effect Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 230000008439 repair process Effects 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 239000003570 air Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 239000003208 petroleum Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
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CN2012100849264A CN102605333B (zh) | 2012-03-28 | 2012-03-28 | 高温环境下具有高激光损伤阈值氧化钽薄膜的制备方法 |
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CN102605333A true CN102605333A (zh) | 2012-07-25 |
CN102605333B CN102605333B (zh) | 2013-11-27 |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103225063A (zh) * | 2013-04-25 | 2013-07-31 | 中国科学院上海光学精密机械研究所 | 钕玻璃激活反射镜的制备方法 |
CN103233203A (zh) * | 2013-03-18 | 2013-08-07 | 内蒙古大学 | 一种铁磁性增强的BiFeO3薄膜的制备方法 |
CN103949771A (zh) * | 2014-02-13 | 2014-07-30 | 同济大学 | 一种基于特征人工节瘤缺陷的激光预处理技术 |
CN105734505A (zh) * | 2016-03-18 | 2016-07-06 | 东北大学 | 一种钛合金切削用复合功能刀具涂层及其制备方法 |
CN106958008A (zh) * | 2017-02-20 | 2017-07-18 | 东北大学秦皇岛分校 | 一种通过直流磁控溅射法制备氧化钽薄膜的方法 |
CN108445046A (zh) * | 2018-01-24 | 2018-08-24 | 四川大学 | 基于电介质薄膜电容特性的抗激光损伤能力的比较方法 |
CN109115684A (zh) * | 2018-09-07 | 2019-01-01 | 中国工程物理研究院激光聚变研究中心 | 用于确定激光预处理能量水平的测量方法及测量系统 |
CN110330236A (zh) * | 2019-07-16 | 2019-10-15 | 中国矿业大学 | 一种具有高激光损伤阈值的耐高温氧化铌薄膜制备方法 |
CN110530206A (zh) * | 2019-10-11 | 2019-12-03 | 河南平原光电有限公司 | 用于激光信息场光学码盘的高损伤阈值保护膜制备工艺 |
CN112095081A (zh) * | 2020-09-10 | 2020-12-18 | 天津津航技术物理研究所 | 一种超低应力高反射薄膜的制备方法 |
CN112267098A (zh) * | 2020-09-07 | 2021-01-26 | 中国科学院上海光学精密机械研究所 | 空间激光薄膜制备方法 |
CN112981353A (zh) * | 2019-12-13 | 2021-06-18 | 中国科学院大连化学物理研究所 | 一种薄膜应力的消除方法 |
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CN1394358A (zh) * | 2000-01-10 | 2003-01-29 | 电子科学工业公司 | 以具超短脉冲宽度的激光脉冲的脉冲串处理存储器链路的激光器系统及方法 |
CN1839576A (zh) * | 2003-08-19 | 2006-09-27 | 电子科学工业公司 | 产生定制的激光脉冲组 |
JP4045816B2 (ja) * | 2002-02-20 | 2008-02-13 | 凸版印刷株式会社 | 多孔性酸化チタン薄膜被覆フィルムの形成方法 |
CN101214395A (zh) * | 2008-01-02 | 2008-07-09 | 西南交通大学 | 一种无机材料表面生物化的方法 |
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- 2012-03-28 CN CN2012100849264A patent/CN102605333B/zh not_active Expired - Fee Related
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US4002545A (en) * | 1976-02-09 | 1977-01-11 | Corning Glass Works | Method of forming a thin film capacitor |
JPH045816B2 (zh) * | 1983-04-04 | 1992-02-03 | Toyota Motor Co Ltd | |
JPH01215969A (ja) * | 1988-02-23 | 1989-08-29 | Fujitsu Ltd | 酸化タンタルの成膜方法 |
CN1064157A (zh) * | 1991-02-04 | 1992-09-02 | 浙江大学 | 失谐式激光偏振片及其制备方法 |
CN1394358A (zh) * | 2000-01-10 | 2003-01-29 | 电子科学工业公司 | 以具超短脉冲宽度的激光脉冲的脉冲串处理存储器链路的激光器系统及方法 |
JP4045816B2 (ja) * | 2002-02-20 | 2008-02-13 | 凸版印刷株式会社 | 多孔性酸化チタン薄膜被覆フィルムの形成方法 |
CN1839576A (zh) * | 2003-08-19 | 2006-09-27 | 电子科学工业公司 | 产生定制的激光脉冲组 |
CN101214395A (zh) * | 2008-01-02 | 2008-07-09 | 西南交通大学 | 一种无机材料表面生物化的方法 |
CN102086502A (zh) * | 2010-11-22 | 2011-06-08 | 福建福晶科技股份有限公司 | 一种提高高反光学薄膜激光损伤阈值的镀制方法 |
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许程等: ""不同方法制备的Ta2O5薄膜光学性能和激光损伤阈值的对比分析"", 《中国激光》 * |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103233203A (zh) * | 2013-03-18 | 2013-08-07 | 内蒙古大学 | 一种铁磁性增强的BiFeO3薄膜的制备方法 |
CN103225063A (zh) * | 2013-04-25 | 2013-07-31 | 中国科学院上海光学精密机械研究所 | 钕玻璃激活反射镜的制备方法 |
CN103949771A (zh) * | 2014-02-13 | 2014-07-30 | 同济大学 | 一种基于特征人工节瘤缺陷的激光预处理技术 |
CN105734505A (zh) * | 2016-03-18 | 2016-07-06 | 东北大学 | 一种钛合金切削用复合功能刀具涂层及其制备方法 |
CN105734505B (zh) * | 2016-03-18 | 2017-12-29 | 东北大学 | 一种钛合金切削用复合功能刀具涂层及其制备方法 |
CN106958008A (zh) * | 2017-02-20 | 2017-07-18 | 东北大学秦皇岛分校 | 一种通过直流磁控溅射法制备氧化钽薄膜的方法 |
CN108445046A (zh) * | 2018-01-24 | 2018-08-24 | 四川大学 | 基于电介质薄膜电容特性的抗激光损伤能力的比较方法 |
CN109115684A (zh) * | 2018-09-07 | 2019-01-01 | 中国工程物理研究院激光聚变研究中心 | 用于确定激光预处理能量水平的测量方法及测量系统 |
CN110330236A (zh) * | 2019-07-16 | 2019-10-15 | 中国矿业大学 | 一种具有高激光损伤阈值的耐高温氧化铌薄膜制备方法 |
CN110330236B (zh) * | 2019-07-16 | 2021-08-31 | 中国矿业大学 | 一种具有高激光损伤阈值的耐高温氧化铌薄膜制备方法 |
CN110530206A (zh) * | 2019-10-11 | 2019-12-03 | 河南平原光电有限公司 | 用于激光信息场光学码盘的高损伤阈值保护膜制备工艺 |
CN112981353A (zh) * | 2019-12-13 | 2021-06-18 | 中国科学院大连化学物理研究所 | 一种薄膜应力的消除方法 |
CN112267098A (zh) * | 2020-09-07 | 2021-01-26 | 中国科学院上海光学精密机械研究所 | 空间激光薄膜制备方法 |
CN112267098B (zh) * | 2020-09-07 | 2022-03-08 | 中国科学院上海光学精密机械研究所 | 空间激光薄膜制备方法 |
CN112095081A (zh) * | 2020-09-10 | 2020-12-18 | 天津津航技术物理研究所 | 一种超低应力高反射薄膜的制备方法 |
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