CN102593303A - Light emitting element with plug - Google Patents

Abstract

The invention discloses a light emitting element with a plug. The light-emitting element includes a light-emitting unit, a structure, and a plurality of plugs. The light emitting unit is of a laminated structure and is provided with a first semiconductor layer, a light emitting layer and a second semiconductor layer. The structure body is stacked with the light emitting unit and at least comprises a light emitting diode. The plugs can electrically connect the light-emitting unit and the structure, and at least one plug penetrates through the light-emitting unit.

Description

Light emitting element with plug

technical field

The present invention mainly relates to a solid-state light-emitting element, which can be a solid-state light source made of common light-emitting diodes, lasers, and the like using semiconductor materials.

Background technique

The applicability of solid-state light-emitting devices is gradually increasing, and more and more people use energy-saving solid-state light-emitting devices in various fields. In order to increase its function, the light-emitting element will be further electrically connected with other elements through external circuit connections, so as to achieve the integrated effect. However, connection through external lines often leads to disconnection or poor contact due to the relative position or height difference between the light-emitting element and other elements. In addition, when it is necessary to combine different elements in a stacked manner, they cannot be connected in series by means of external circuit connections. Therefore, how to more effectively electrically connect the solid-state light-emitting device with other devices is an urgent problem to be solved.

Contents of the invention

The present invention mainly relates to a light-emitting element, which includes a light-emitting unit, a structure and a plurality of plugs. Wherein the light emitting unit is a laminated structure and has a first semiconductor layer, a light emitting layer and a second semiconductor layer. Among the plurality of plugs, at least one plug penetrates the structure and is electrically connected to the light-emitting unit; and at least one plug penetrates the light-emitting unit and is electrically connected to the light-emitting unit. Wherein, the structure may include a substrate or a plurality of light emitting diodes. Through the electrical connection of the plug, the light emitting unit and the structure are combined into an integrated component.

Description of drawings

Fig. 1 shows an embodiment of the present invention;

Figure 2 is an enlarged view of the embolism;

3 to 8 respectively represent different embodiments disclosed in the present invention;

Explanation of reference signs

100: light emitting unit

101: first semiconductor layer

102: Second semiconductor layer

103: Luminescent layer

104, 104a-b: first electrodes

200a～d: embolism

210: insulating wall

220: conductive layer

300: Structure

310a~b: light emitting diodes

304, 304a-d: second electrodes

400: insulating layer

Detailed ways

The structure of the embodiment of the present invention is shown in FIG. 1. The light emitting element 10 includes a light emitting unit 100. The light emitting unit 100 is a stacked structure, including a first semiconductor layer 101, a second semiconductor layer 102, and a light emitting layer 103, wherein The light emitting layer 103 is located between the first semiconductor layer 101 and the second semiconductor layer 102; the light emitting unit 100 also includes a plurality of first electrodes 104a-104b. In addition, the light emitting element 10 further includes a structure body 300 and a plurality of plugs 200 . In this embodiment, at least one plug 200a among the plurality of plugs 200 penetrates a part of the stacked layers of the light emitting unit 100 (in this embodiment, the first semiconductor layer 101) and the structure 300, and is electrically connected to the first electrode 104a . And at least one plug 200b in the plurality of plugs 200 penetrates the light emitting unit 100 and the structure 300 and is electrically connected to the first electrode 104b. Through the plurality of plugs 200 , the light emitting unit 100 can be electrically connected with the plurality of second electrodes 304 on the surface 302 of the structure body 300 . When the current is input through the second electrode 304 or the first electrodes 104a, 104b, the light emitting unit 100 will light up.

The first semiconductor layer 101, the second semiconductor layer 102, and the light-emitting layer 103 of the light-emitting unit 100 can be composed of a single element, such as silicon, germanium, and other elements with semiconductor energy gaps; It can also be composed of more than one elemental material, including a compound composed of Group III nitrides, and its composition can be represented by the chemical formula Al _x Ga _y In _z N _1-a M _a (wherein x+y+z=1, and 0≤x≤1; 0≤y≤1; 0≤z≤1), M represents group V elements other than nitrogen (wherein 0≤a≤1). This combination of more than one element material can also be composed of Al _x Ga _y As (where x+y=1, and 0≤x≤1; 0≤y≤1; 0≤z≤1), or Al _x Ga _y In _z P (where x+y+z=1, and 0≤x≤1; 0≤y≤1; 0≤z≤1). In each embodiment of the present invention, the first semiconductor layer 101 and the second semiconductor layer 102 respectively represent two semiconductor layers located on different sides of the light-emitting layer 103, and the first and second here only represent doping with different polarities, The composition materials of the semiconductor layers may be the same or different from each other. For example, when the first semiconductor layer 101 is a p-type semiconductor, the second semiconductor layer 102 is an n-type semiconductor, and vice versa. The main feature of the light emitting unit 100 is that when there is a voltage difference between the first semiconductor layer 101 and the second semiconductor layer 102 , the light emitting layer 103 emits light with a specific wavelength range. In addition, it should be pointed out here that, if the word "light emitting diode" mentioned in each embodiment of the present invention is not otherwise described in each embodiment, its composition structure and materials are the same as those of the light emitting unit 100 described above. The content is the same. If additional definitions are added in each embodiment, the definition in this embodiment shall prevail.

The structural section of the plug 200 is shown in FIG. 2 , which has an insulating wall 210 and a conductive layer 220 . The insulating wall 210 is mainly used to isolate the conductive layer 220 from the semiconductor layer or the light-emitting layer of the light-emitting unit, so as to avoid interference to the light-emitting unit when current passes through the conductive layer 220 . In each embodiment of the present invention, there are many different methods for making the mentioned plug 200. The main step is to form a hole at the place where the plug 200 intends to pass through by etching, mechanical drilling, etc., and then use such as Thin-film processes in the semiconductor process, such as PECVD (plasma enhanced chemical vapor deposition), HDPCVD (high density plasma enhanced chemical vapor deposition), spin coating (spincoating), etc., cover the side walls of the holes with insulating materials, and then through such as PVD (physical vapor deposition), sputtering, electron beam (E-Beam), electroplating and other methods to fill the conductive material in the hole.

The structure body 300 in the light emitting device 10 may be a substrate. In various embodiments of the present invention, the term substrate may be a growth substrate of the light emitting unit 100 or a carrier plate used for carrying. When the structure 300 is the growth substrate of the light-emitting unit 100, its material can be sapphire (sapphire), silicon carbide (SiC), silicon (silicon), metal oxides such as aluminum oxide (aluminum oxide), zinc oxide (zincoxide), Magnesium oxide, manganese oxide, zirconium oxide, manganese zinc iron oxide, magnesium aluminum oxide, aluminum nitride, etc. When the structure 300 is the carrier substrate of the light emitting unit 100, its material can be polymer, metal, alloy, metal matrix composite, ceramic matrix composite, high Molecular polymer composite (polymer matrix composite). In addition, when the structure body 300 is the carrier substrate of the light emitting unit 100 , it may be a printed circuit board (PCB).

FIG. 3 shows another embodiment of the present invention. In this embodiment, the light emitting element 20 includes a light emitting unit 100, and the light emitting unit 100 includes a first semiconductor layer 101, a second semiconductor layer 102, a light emitting layer 103 and a plurality of first semiconductor layers. An electrode 104 , wherein the light emitting layer 103 is located between the first semiconductor layer 101 and the second semiconductor layer 102 . In this embodiment, the light emitting unit 100 is a vertical light emitting diode, but in other embodiments of the present invention, it may also be a horizontal light emitting diode. The light emitting element 20 further includes a structure body 300 and a plurality of plugs 200 . In this embodiment, the structure body 300 is a light emitting diode stacked on the light emitting unit 100 . At least one plug 200 a among the plurality of plugs 200 penetrates the structure 300 and is electrically connected to the corresponding second electrode 304 a on the structure 300 . At least one plug 200b in the plurality of plugs 200 runs through the light emitting unit 100 and is electrically connected to the second electrode 304b on the structure body 300 . Through the plurality of plugs 200 , the light emitting unit 100 and the structure body 300 can be electrically connected. In this embodiment, when the current is input through the second electrode 304 or the first electrode 104 , the light emitting unit 100 and the structure 300 emit light at the same time. In this embodiment, an insulating layer 400 can be added between the light emitting unit 100 and the structure body 300 . The purpose of the insulating layer 400 is to electrically isolate the light emitting unit 100 and the structure body 300 to avoid a short circuit between the semiconductor layers of each other. The material of the insulating layer 400 may include high dielectric organic material, silicon-containing oxide or silicon-containing nitride, and the like.

FIG. 4 is another embodiment of the present invention. The structure 300 in the light emitting element 30 includes light emitting diodes 310a and 310b. In this embodiment, the light emitting diodes 310a and 310b are vertical light emitting diodes, but in other implementations of the present invention In an example, it may be a horizontal light emitting diode. The light emitting diodes 310 a and 310 b are respectively stacked on different sides of the light emitting unit 100 . The structure body 300 further includes a plurality of second electrodes 304 a - 304 d. The light emitting element 30 has a plurality of plugs 200, including a plug 200a and a plug 200b. The light emitting unit 100 is electrically connected to the second electrode 304a of the light emitting diode 310a and the second electrode 304b of the light emitting diode 310b through the plug 200a. The light emitting unit 100 is electrically connected to the second electrode 304d of the light emitting diode 310a and the second electrode 304c of the light emitting diode 310b through the plug 200b. Through the plurality of plugs 200 in the light emitting element 30, the light emitting unit 100 and the structure 300 can be electrically connected. Therefore, when a current is introduced through the second electrodes 304a-304d of the structure 300 or the first electrode 104 of the light emitting unit 100 to emit light When the device 30 is used, the light emitting unit 100 and the light emitting diode 310a and the light emitting diode 310b in the structure 300 emit light at the same time. An insulating layer 400 may also be added between the light emitting unit 100 and the light emitting diodes 310a and 310b. The purpose of the insulating layer 400 is to electrically isolate the light emitting unit 100 and the structure body 300 to avoid short circuits between the semiconductor layers.

In this embodiment, the light emitting unit 100 can emit light having a first wavelength range, and the light emitting diode 310 a and the light emitting diode 310 b in the structure 300 respectively emit a second wavelength range different from the first wavelength range and a third wavelength Light in the range of wavelengths, after mixing the light in the three wavelength ranges, light in the fourth wavelength range will be emitted. Specifically, when the driving current is introduced into the light-emitting element 30, the light-emitting unit 100 will emit blue light with a wavelength range of about 440-480 nm, and the light-emitting diode 310a in the structure 300 will emit green light with a wavelength range of about 500-560 nm. , the light emitting diode 310b emits red light with a wavelength range of about 600-650 nm. When the three kinds of light are mixed, white light is produced.

Fig. 5A shows another embodiment of the present invention, and Fig. 5B is a sectional view along line AA'. The light emitting element 40 has a light emitting unit 100, a structure 300, and a plurality of plugs 200a to 200b. An insulating layer 400 may be added between the light emitting unit 100 and the structure body 300 . The light emitting unit 100 is a stacked structure including a first semiconductor layer 101 , a light emitting layer 103 , a second semiconductor layer 102 and a plurality of first electrodes 104 . In this embodiment, the structure 300 is a light emitting diode, specifically, a horizontal light emitting diode, but in other embodiments of the present invention, it may also be a vertical light emitting diode. The structure 300 further includes a plurality of second electrodes 304 . The plug 200a penetrates the light emitting unit 100 and further extends to be electrically connected to the corresponding second electrode 304 . Therefore, when a current is introduced into the light-emitting element 40 through the second electrode 304 of the structure 300 or the first electrode 104 of the light-emitting unit 100 , the light-emitting unit 100 and the structure 300 will simultaneously emit light.

FIG. 6 shows another embodiment of the present invention. The light emitting element 50 has a structure similar to that of the light emitting element 40 in FIG. 304a-304d. The light emitting element 50 has a plurality of plugs 200a to 200d. The plug 200a penetrates the light emitting unit 100 and further extends to be electrically connected to the corresponding second electrode 304a on the light emitting diode 310a, and the plug 200b penetrates a part of the stack of the light emitting unit 100 and is electrically connected to the corresponding second electrode 304c on the light emitting diode 310a, The plug 200c runs through the light emitting unit 100, the light emitting diode 310a and the light emitting diode 310b and is electrically connected to the second electrode 304b. The electrodes 304d are electrically connected. The plurality of plugs 200 are electrically connected to the plurality of first electrodes 104 on the light emitting unit 100 . When current enters the light-emitting element 50 through the second electrodes 304 a - 304 d of the structure 300 or the first electrode 104 of the light-emitting unit 100 , the light-emitting unit 100 and the LEDs 310 a and 310 b in the structure 300 emit light simultaneously. An insulating layer 400 may also be added between the light emitting unit 100 and the light emitting diode 310a, and between the light emitting diode 310a and the light emitting diode 310b. The purpose of the insulating layer 400 is to electrically isolate the light emitting unit 100 and the structure body 300 to avoid short circuits between the semiconductor layers.

In this embodiment, the light emitting unit 100 can emit light having a first wavelength range, and the light emitting diode 310 a and the light emitting diode 310 b in the structure 300 respectively emit a second wavelength range different from the first wavelength range and a third wavelength Light in the range of wavelengths, after mixing the light in the three wavelength ranges, light in the fourth wavelength range will be emitted. For example, but the present invention is not limited, when the driving current is introduced into the light-emitting element 30, the light-emitting unit 100 will emit blue light with a wavelength range of about 440-480 nm, and the light-emitting diode 310a in the structure 300 will emit blue light with a wavelength range of about 500 nm. Green light of ~560nm, the light emitting diode 310b emits red light with a wavelength range of approximately 600-650nm. When the three kinds of light are mixed, white light is produced.

FIG. 7 is another embodiment of the present invention. A light emitting element 60 has a light emitting unit 100 , a structure 300 , and a plurality of plugs 200 . An insulating layer 400 may be added between the light emitting unit 100 and the structure body 300 to avoid a short circuit between the semiconductor layers. The light emitting unit 100 is a stacked structure including a first semiconductor layer 101 , a light emitting layer 103 , a second semiconductor layer 102 and a plurality of first electrodes 104 . The structure body 300 includes at least two light emitting diodes 310a and 310b, and the structure body 300 further includes a plurality of second electrodes 304a-304d. The plurality of plugs include a plug 200a, a plug 200b, and a plug 200c. The plug 200a runs through the light emitting unit 100 and further extends to be electrically connected to the second electrode 304a on the light emitting diode 310a. The plug 200b is electrically connected to the first electrode 104b of the light emitting unit 100 and penetrates through the light emitting diode 310a and is electrically connected to the second electrode 304d on the light emitting diode 310a. Furthermore, the plug 200b penetrates through the light emitting diode 310b and is electrically connected to the corresponding second electrode 304c on the light emitting diode 310b. The plug 200c runs through the light emitting unit 100 and further extends through the light emitting diode 310a, and is electrically connected to the second electrode 304b on the light emitting diode 310b. Since multiple plugs 200a-200c are electrically connected to multiple first electrodes 104 on the light-emitting unit 100 at the same time, when a current is introduced into the light-emitting element 60 through the second electrodes 304a-304d of the structure or the first electrodes 104 of the light-emitting unit 100 , the light emitting unit 100 and the light emitting diode 310 a and the light emitting diode 310 b in the structural body 300 emit light at the same time. An insulating layer 400 may also be added between the LED 310a and the LED 310b. The purpose of the insulating layer 400 is to electrically isolate the light emitting unit 100 and the structure body 300 to avoid short circuits between the semiconductor layers.

In this embodiment, the light emitting unit 100 can emit light having a first wavelength range, and the light emitting diode 310 a and the light emitting diode 310 b in the structure 300 respectively emit a second wavelength range different from the first wavelength range and a third wavelength Light in the range of wavelengths, after mixing the light in the three wavelength ranges, light in the fourth wavelength range will be emitted. For example, but the present invention is not limited, when the driving current is introduced into the light-emitting element 30, the light-emitting unit 100 will emit blue light with a wavelength range of about 440-480 nm, and the light-emitting diode 310a in the structure 300 will emit blue light with a wavelength range of about 500 nm. Green light of ~560nm, the light emitting diode 310b emits red light with a wavelength range of approximately 600-650nm. When the three kinds of light are mixed, white light is produced.

In addition, the structure 300 included in each embodiment shown in FIG. 3 to FIG. 7 may further include a substrate 320, and the embodiment 70 shown in FIG. 8 is to further include the substrate 320 in the embodiment 60 shown in FIG. 7 320. The aforementioned plugs 200 a - 200 d penetrate through each light emitting diode, then further penetrate through the substrate 320 , and are electrically connected to the second electrode 304 at the bottom of the substrate 320 . The current can pass through the second electrode 304 at the bottom of the substrate 320 and the plug 200 to simultaneously light up the light emitting diodes and the light emitting unit 100 in the structure 300 .

In addition, the structure 300 can be a Schottky diode, a Zener diode, an integrated circuit element (Integrated Circuit), printed circuit boards or combinations thereof.

The various embodiments listed in the present invention are only used to illustrate the present invention, and are not intended to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention will not depart from the spirit and scope of the present invention.

Claims (10)

1. Light-emitting components, including: a light emitting unit comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer, wherein the light emitting layer is located between the first semiconductor layer and the second semiconductor layer; a structure comprising a light emitting diode, wherein the structure is stacked with the light emitting unit; and A plurality of plugs are used to electrically connect the light-emitting unit and the structure, wherein at least one of the plurality of plugs penetrates the light-emitting unit. 2. The light-emitting device as claimed in claim 1, wherein at least one of the plurality of plugs passes through part or all of the structure. 3. The light-emitting element according to claim 1 or 2, wherein the structure comprises a substrate; and/or a plurality of light-emitting diodes; and/or Schottky diodes, Zener diodes, integrated circuit components, printed circuit boards, or combination. 4. The light emitting device according to claim 1 or 2, wherein the light emitting unit comprises a plurality of first electrodes. 5. The light-emitting device as claimed in claim 3, wherein the light-emitting diode can be of vertical or horizontal structure. 6 . The light emitting device according to claim 5 , further comprising an insulating layer interposed between the light emitting unit and the structure. 7. The light-emitting device as claimed in claim 6, wherein the material of the insulating layer is a high dielectric organic material, a silicon-containing oxide, or a silicon-containing nitride. 8. Light-emitting components, including: a light emitting unit comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer, wherein the light emitting layer is located between the first semiconductor layer and the second semiconductor layer; A structure comprising a plurality of structural units, wherein the light-emitting unit is located between the plurality of structural units; and A plurality of plugs are used to electrically connect the light-emitting unit and the plurality of structural units, wherein at least one of the plurality of plugs penetrates the light-emitting unit. 9. The light emitting device as claimed in claim 8, wherein the plurality of structural units comprise light emitting diodes, Schottky diodes, Zener diodes, integrated circuit components, printed circuit boards or combinations thereof. 10. The light-emitting element according to claim 8, wherein the light-emitting unit can emit light having a first wavelength range; The plurality of structural units at least include a first light emitting diode capable of emitting light with a second wavelength range and a second light emitting diode capable of emitting light with a third wavelength range; Light in the three wavelength ranges can be mixed into white light.

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