CN102593290B - White-light LED (Light Emitting Diode) epitaxial wafer and manufacturing process thereof, and manufacturing method of white-light LED chip - Google Patents
White-light LED (Light Emitting Diode) epitaxial wafer and manufacturing process thereof, and manufacturing method of white-light LED chip Download PDFInfo
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Abstract
The invention discloses a white-light LED (Light Emitting Diode) epitaxial wafer and a manufacturing process thereof, and a manufacturing method of a white-light LED chip. The white-light LED epitaxial wafer is provided with a GaN buffer layer on a sapphire substrate, and the buffer layer is sequentially provided with a green-light N-GaN contact layer, a green-light InGaN/GaN multiple quantum well light emitting layer, a green-light P-GaN contact layer, a blue-green-light cascade layer, a blue-light N-GaN contact layer, a blue-light InGaN/GaN multiple quantum well light emitting layer, a blue-light P-GaN contact layer, a red-blue-light cascade layer, a red-light N-GaP current expanding and ohmic contact layer, a red-light N-AlGaInP transition and lower limit layer, a red-light multiple quantum well AlGaInP light emitting layer, a red-light P-AlGaInP upper limit layer, a red-light P-GaP current expanding layer, a yellow-red-light cascade layer, a yellow-light N-Ga current expanding and ohmic contact layer, a yellow-light N-AlGaInP transition and lower limit layer, a yellow-light multiple quantum well AlGaInP light emitting layer, a yellow-light P-AlGaInP upper limit layer and a yellow-light P-GaP current expanding layer. The white-light LED epitaxial wafer disclosed by the invention gets rid of limitation of fluorescent powder and has excellent color rendering property.
Description
Technical field
The present invention relates to photoelectron technology field, specifically, relate to a kind of white light LEDs epitaxial wafer and manufacture craft thereof of high-color rendering, and a kind of manufacture method of White-light LED chip.
Background technology
White light LEDs has green, energy-saving and environmental protection, reaction speed is fast, the life-span is long, can be operated in the plurality of advantages such as fast state, is regarded as the rising star of green illumination light source.Light source is defined as color rendering to the colour developing ability of object, be by with the comparison of the appearance color of the reference of same colour temperature or the lower object of reference light source (incandescent lamp etc.).In the time of little in light source light spectrum or main ripple that shortage object reflects under reference light source, can make color produce obvious aberration, aberration degree is larger, and light source is to the color rendering of this look poorer.Color rendering index is the common method that defines at present color rendering properties of light source.When color rendering index is that the bright color rendering properties of light source of 100 markers is the highest, it can correctly show the original color of material.
Three kinds of modes of main employing realize LED white light at present: 1. by the three primary colors multi-chip illuminated in combination synthesize white light of LED RGB, its advantage is that efficiency is high, colour temperature is controlled, color rendering is better, weak point is that three primary colors light decay difference causes colour temperature unstable, packaging and die bonding routing is comparatively complicated, and the required driving voltage difference of red, green, blue three primary colors chip, need on each LED chip, add different drive currents and adjust color and brightness, control circuit is more complicated, cost is higher; 2. blue-light LED chip excites yellow fluorescent powder, and the green-yellow light being sent by LED blue light and fluorescent material synthesizes white light; Can also add therein a small amount of red fluorescence powder or add appropriate green, red fluorescence powder simultaneously for improving color developing; 3. ultraviolet leds chip excitated fluorescent powder sends three primary colors synthesize white light; In the second and the third method, all to adopt LED chip excitated fluorescent powder to realize white light, its weak point is for the control of fluorescent material consumption comparatively strict, fluorescent material consumption slightly deviation just can cause the color rendering of white light LEDs poor, general colour rendering index is 70 left and right, color rendering index is too low, can not meet the demands.For example, in second method, adopt blue-light LED chip to excite yellow fluorescent powder, the control of yellow fluorescent powder accurate quantification is more difficult, yellow fluorescent powder consumption is more just can cause photochromic partially yellow, yellow fluorescent powder consumption is less just can be caused photochromic partially bluely, and color rendering is poor, and color rendering index is not high.Although and color rendering is better in first method, its color rendering index is also difficult to reach 90, also can only meet general user's demand, and cost is higher, many occasions are all inapplicable.Therefore the color developing that, how to improve existing white light LEDs reduces production costs simultaneously and becomes the difficult problem that current LED industry is concerned about the most.
Summary of the invention
Technical problem to be solved by this invention is the technical problem that white light LEDs color rendering of the prior art is not high, production cost is high and then the white light LEDs epitaxial wafer and the White-light LED chip that provide that a kind of color rendering is good, produce in batches on good stability and the lower line that is suitable for putting into production of cost.
For solving the problems of the technologies described above, the invention provides a kind of white light LEDs epitaxial wafer, in Sapphire Substrate 1, form GaN resilient coating 2, on described GaN resilient coating 2, form successively green glow N-GaN contact layer 3, green glow InGaN/GaN multiple quantum well light emitting layer 4, green glow P-GaN contact layer 5, blue green light cascade layer 6, blue light N-GaN contact layer 7, blue light InGaN/GaN multiple quantum well light emitting layer 8, blue light P-GaN contact layer 9, red blue light cascade layer 10, ruddiness N-GaP current expansion and ohmic contact layer 11, ruddiness N-AlGaInP transition and lower limit layer 12, ruddiness Multiple Quantum Well AlGaInP luminescent layer 13, ruddiness P-AlGaInP upper limiting layer 14, ruddiness P-GaP current extending 15, yellow ruddiness cascade layer 16, gold-tinted N-GaP current expansion and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21.
The thickness of described green glow InGaN/GaN multiple quantum well light emitting layer 4 is that 1000nm～10000nm, wavelength are 530nm～540nm.
The thickness of described green glow InGaN/GaN multiple quantum well light emitting layer 4 is 1800nm.
The wavelength of described green glow InGaN/GaN multiple quantum well light emitting layer 4 is 535nm.
The thickness of described blue light InGaN/GaN multiple quantum well light emitting layer 8 is that 1000nm～10000nm, wavelength are 460nm～470nm.
The thickness of described blue light InGaN/GaN multiple quantum well light emitting layer 8 is 1900nm.
Described blue light InGaN/GaN multiple quantum well light emitting layer 8 wavelength are 465nm.
The thickness of described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 is that 500nm～5000nm, wavelength are 620nm～635nm.
The thickness of described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 is 900nm.
The wavelength of described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 is 625nm.
The thickness of described gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19 is that 500nm～5000nm, wavelength are 585nm～595nm.
The thickness of described gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19 is 1000nm.
Described gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19 wavelength are 590nm.
The thickness of described ruddiness P-AlGaInP upper limiting layer 14 is 500nm～1000nm.
The thickness of described ruddiness N-AlGaInP transition and lower limit layer 12 is 500nm～1000nm.
The present invention also provides a kind of technique of making above-mentioned white light LEDs epitaxial wafer, comprises the steps:
I. in epitaxial furnace, grow green luminescence layer and blue light-emitting, comprise
1. Sapphire Substrate 1 is placed in pallet and sends into epitaxial furnace, epitaxial furnace furnace temperature is set within the scope of 605～615 degrees Celsius, growing GaN resilient coating 2;
2. epitaxial furnace furnace temperature is set within the scope of 1055～1065 degrees Celsius, growth green glow N-GaN contact layer 3;
3. epitaxial furnace furnace temperature is set within the scope of 685～695 degrees Celsius, taking nitrogen as carrier, growth green glow InGaN/GaN multiple quantum well light emitting layer 4;
4. epitaxial furnace furnace temperature is set within the scope of 995～1005 degrees Celsius, growth green glow P-GaN contact layer 5;
5. epitaxial furnace furnace temperature is set within the scope of 905～1005 degrees Celsius, growth blue green light cascade layer 6;
6. epitaxial furnace furnace temperature is set within the scope of 1055～1065 degrees Celsius, growth blue light N-GaN contact layer 7;
7. epitaxial furnace furnace temperature is set within the scope of 685～695 degrees Celsius, taking nitrogen as carrier, growth blue light InGaN/GaN multiple quantum well light emitting layer 8;
8. epitaxial furnace furnace temperature is set within the scope of 995～1005 degrees Celsius, growth blue light N-GaN contact layer 9;
II. continued growth red light luminescent layer and Yellow light emitting layer, comprise
1. epitaxial furnace furnace temperature is set within the scope of 680～700 degrees Celsius, the red blue light cascade layer 10 of growing;
2. epitaxial furnace furnace temperature is set within the scope of 700～740 degrees Celsius, growth ruddiness N-GaP current expansion and ohmic contact layer 11;
3. utilize trimethyl gallium TMGa, trimethyl aluminium TMAl, trimethyl indium TMIn and phosphine PH3 on described GaP current expansion and ohmic contact layer 11, grow ruddiness N-AlGaInP transition and lower limit layer 12; The Multiple Quantum Well MQWsAlGaInP active area of growing on described ruddiness N-AlGaInP transition and lower limit layer 12, the trap of AlGaInP active area is built and is consisted of: trap (Al
xga
1-x) InP/ builds (Al
yga
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; The ruddiness P-AlGaInP upper limiting layer 14 that growth thickness is 0.5um～1.0um on described AlGaInP active area; The ruddiness P-GaP current extending 15 of growing on described ruddiness P-AlGaInP upper limiting layer 14;
4. epitaxial furnace furnace temperature is set within the scope of 680～700 degrees Celsius, the yellow ruddiness cascade layer 16 of growing on described ruddiness P-GaP current extending 15;
5. epitaxial furnace furnace temperature is set within the scope of 700～740 degrees Celsius, the gold-tinted N-GaP current expansion of growing successively and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21 on described yellow ruddiness cascade layer 16;
Obtain thus white light LEDs epitaxial wafer.
Described Step II is carried out in another epitaxial furnace.
The present invention also provides a kind of manufacture method of White-light LED chip, and described manufacture method adopts above-mentioned arbitrary described white light LEDs epitaxial wafer, comprises the steps:
I. described white light LEDs epitaxial wafer is processed as to LED chip;
II. on the green glow N-GaN of described LED chip contact layer 3, be provided with N electrode, and gold-tinted P-GaP current extending 21 tops are provided with P electrode.
Technique scheme of the present invention compared with prior art, has following beneficial effect:
1. white light LEDs epitaxial wafer provided by the invention and manufacture craft thereof are the green glow InGaN/GaN multiple quantum well light emitting layers of growing respectively in same Sapphire Substrate, blue light InGaN/GaN multiple quantum well light emitting layer, ruddiness Multiple Quantum Well AlGaInP luminescent layer and gold-tinted Multiple Quantum Well AlGaInP luminescent layer obtain white light, ruddiness Multiple Quantum Well AlGaInP luminescent layer, green glow InGaN/GaN multiple quantum well light emitting layer, blue light InGaN/GaN multiple quantum well light emitting layer, can directly produce RGB white light, be completely free of the constraint of fluorescent material, improve luminous stability, and due to the gold-tinted that adopts gold-tinted Multiple Quantum Well AlGaInP luminescent layer to send, make up the defect of rgb light, greatly improve the color rendering index of white light, applicant is through lot of experiments, draw and utilize this combination of the present invention, the white light producing, color rendering index can reach 95, color rendering is good, good stability, there is higher luminous mass.
2. the minimizing of manufacturing process of white-light LED chip of the present invention packaging process, can make extension, chip, the encapsulation of white light LEDs, the production technology of the whole industrial chain of application simplify, production efficiency is high, is suitable for producing in enormous quantities.
Brief description of the drawings
Fig. 1 is the schematic diagram of white light LEDs epitaxial slice structure of the present invention;
Fig. 2 is LED chip fabrication processing figure of the present invention;
Fig. 3 is the schematic diagram of White-light LED chip structure of the present invention.
Wherein Reference numeral is: 1-substrate, 2-GaN resilient coating, 3-green glow N-GaN contact layer, 4-green glow InGaN/GaN multiple quantum well light emitting layer, 5-green glow P-GaN contact layer, 6-blue green light cascade layer, 7-blue light N-GaN contact layer, 8-blue light InGaN/GaN multiple quantum well light emitting layer, 9-blue light P-GaN contact layer, the red blue light cascade of 10-layer, 11-ruddiness N-GaP current expansion and ohmic contact layer, the N-AlGaInP transition of 12-ruddiness and lower limit layer, 13-ruddiness Multiple Quantum Well AlGaInP luminescent layer, 14-ruddiness P-AlGaInP upper limiting layer, 15-ruddiness P-GaP current extending, the yellow ruddiness cascade of 16-layer, 17-gold-tinted N-GaP current expansion and ohmic contact layer, the N-AlGaInP transition of 18-gold-tinted and lower limit layer, 19-gold-tinted Multiple Quantum Well AlGaInP luminescent layer, 20-gold-tinted P-AlGaInP upper limiting layer, 21-gold-tinted P-GaP current extending, 22-P electrode, 23-N electrode.
Embodiment
Embodiment 1
White light LEDs epitaxial wafer in the present embodiment, as shown in Figure 1, in Sapphire Substrate 1, form GaN resilient coating 2, on described GaN resilient coating 2, form successively green glow N-GaN contact layer 3, green glow InGaN/GaN multiple quantum well light emitting layer 4, green glow P-GaN contact layer 5, blue green light cascade layer 6, blue light N-GaN contact layer 7, blue light InGaN/GaN multiple quantum well light emitting layer 8, blue light P-GaN contact layer 9, red blue light cascade layer 10, ruddiness N-GaP current expansion and ohmic contact layer 11, ruddiness N-AlGaInP transition and lower limit layer 12, ruddiness Multiple Quantum Well AlGaInP luminescent layer 13, ruddiness P-AlGaInP upper limiting layer 14, ruddiness P-GaP current extending 15, yellow ruddiness cascade layer 16, gold-tinted N-GaP current expansion and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21.
Above-mentioned white light LEDs epitaxial wafer, the thickness of described green glow InGaN/GaN multiple quantum well light emitting layer 4 is that 1000nm～10000nm, wavelength are 530nm～540nm, preferably, the thickness of described green glow InGaN/GaN multiple quantum well light emitting layer 4 is 1800nm, and the wavelength of described green glow InGaN/GaN multiple quantum well light emitting layer 4 is 535nm.As the mode that can implement, the thickness of described green glow InGaN/GaN multiple quantum well light emitting layer 4 can also be chosen as 1000nm, 1200nm, 1800nm, 2500nm, 3000nm, 4000nm, 5000nm and 10000nm etc., as long as it is in the scope of 1000nm～10000nm; The wavelength of described green glow InGaN/GaN multiple quantum well light emitting layer 4 is for can also be chosen as 530nm, 533nm, 536nm, 538nm and 540nm etc., as long as it is in the scope of 530nm～540nm.
Above-mentioned white light LEDs epitaxial wafer, the thickness of described blue light InGaN/GaN multiple quantum well light emitting layer 8 is that 1000nm～10000nm, wavelength are 460nm～470nm.As preferred embodiment, the thickness of described blue light InGaN/GaN multiple quantum well light emitting layer 8 is 1900nm, and described blue light InGaN/GaN multiple quantum well light emitting layer 8 wavelength are 465nm.As the mode that can implement, the thickness of described blue light InGaN/GaN multiple quantum well light emitting layer 8 can also be chosen as 1000nm, 1200nm, 1800nm, 2500nm, 3000nm, 4000nm, 5000nm and 10000nm etc., as long as it is in the scope of 1000nm～10000nm; Described blue light InGaN/GaN multiple quantum well light emitting layer 8 wavelength can also be 460nm, 462nm, 463nm, 466nm, 468nm and 470nm etc., as long as it is in the scope of 460nm～470nm.
Above-mentioned white light LEDs epitaxial wafer, the thickness of described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 is that 500nm～5000nm, wavelength are 620nm～635nm.The thickness of described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 is 900nm.The wavelength of described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 is 625nm.As preferred embodiment, the thickness of described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 is 900nm, and described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 wavelength are 625nm.As the mode that can implement, the thickness of described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 can also be chosen as 500nm, 1500nm, 2500nm, 3200nm and 5000nm etc., as long as its thickness is within the scope of 500nm～5000nm; Described ruddiness Multiple Quantum Well AlGaInP luminescent layer 13 wavelength can also be 620nm, 622nm, 626nm, 628nm, 630nm, 632nm, 635nm etc., as long as it is in the scope of 620nm～635nm.
Above-mentioned white light LEDs epitaxial wafer, the thickness of described gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19 is that 500nm～5000nm, wavelength are 585nm～595nm.As preferred embodiment, the thickness of described gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19 is 1000nm, and described gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19 wavelength are 590nm.As the mode that can implement, the thickness of described gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19 can also be chosen as 500nm, 1500nm, 2500nm, 3200nm and 5000nm etc., as long as its thickness is within the scope of 500nm～5000nm; Described gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19 wavelength can also be 585nm, 588nm, 591nm, 593nm, 595nm etc., as long as it is within the scope of 585nm～595nm.
Above-mentioned white light LEDs epitaxial wafer, the thickness of described ruddiness P-AlGaInP upper limiting layer 14 is 500nm～1000nm, as the mode that can implement, can be chosen as 500nm, 600nm, 750nm, 890nm, 950nm and 1000nm etc., as long as it is within the scope of 500nm～1000nm.
Above-mentioned white light LEDs epitaxial wafer, the thickness of described ruddiness N-AlGaInP transition and lower limit layer 12 is 500nm～1000nm, as the mode that can implement, can be chosen as 500nm, 600nm, 750nm, 890nm, 950nm and 1000nm etc., as long as it is within the scope of 500nm～1000nm.
The present embodiment provides a kind of technique of making above-mentioned white light LEDs epitaxial wafer, comprises the steps:
I. in epitaxial furnace, grow green luminescence layer and blue light-emitting, this step can be selected K465i MOCVD epitaxial furnace, and its growth course comprises the steps:
1. Sapphire Substrate 1 is placed in pallet and sends into epitaxial furnace, epitaxial furnace furnace temperature is set within the scope of 605～615 degrees Celsius, growing GaN resilient coating 2; In the present embodiment, it is 610 degrees Celsius that this step is selected furnace temperature;
2. epitaxial furnace furnace temperature is set within the scope of 1055～1065 degrees Celsius, growth green glow N-GaN contact layer 3; In the present embodiment, it is 1060 degrees Celsius that this step is selected furnace temperature;
3. epitaxial furnace furnace temperature is set within the scope of 685～695 degrees Celsius, taking nitrogen as carrier, growth green glow InGaN/GaN multiple quantum well light emitting layer 4; In the present embodiment, it is 690 degrees Celsius that this step is selected furnace temperature;
4. epitaxial furnace furnace temperature is set within the scope of 995～1005 degrees Celsius, growth green glow P-GaN contact layer 5; In the present embodiment, it is 999 degrees Celsius that this step is selected furnace temperature;
5. epitaxial furnace furnace temperature is set within the scope of 905～1005 degrees Celsius, growth blue green light cascade layer 6; In the present embodiment, it is 950 degrees Celsius that this step is selected furnace temperature;
6. epitaxial furnace furnace temperature is set within the scope of 1055～1065 degrees Celsius, growth blue light N-GaN contact layer 7; In the present embodiment, it is 1060 degrees Celsius that this step is selected furnace temperature;
7. epitaxial furnace furnace temperature is set within the scope of 685～695 degrees Celsius, taking nitrogen as carrier, growth blue light InGaN/GaN multiple quantum well light emitting layer 8; In the present embodiment, it is 690 degrees Celsius that this step is selected furnace temperature;
8. epitaxial furnace furnace temperature is set within the scope of 995～1005 degrees Celsius, growth blue light N-GaN contact layer 9; In the present embodiment, it is 999 degrees Celsius that this step is selected furnace temperature;
II. continued growth red light luminescent layer and Yellow light emitting layer, in the present embodiment, changes a new epitaxial furnace, for example, select equally K465i MOCVD epitaxial furnace, comprises
1. epitaxial furnace furnace temperature is set within the scope of 680～700 degrees Celsius, the red blue light cascade layer 10 of growing; In the present embodiment, it is 690 degrees Celsius that this step is selected furnace temperature;
2. epitaxial furnace furnace temperature is set within the scope of 700～740 degrees Celsius, growth ruddiness N-GaP current expansion and ohmic contact layer 11; In the present embodiment, it is 725 degrees Celsius that this step is selected furnace temperature;
3. utilize trimethyl gallium TMGa, trimethyl aluminium TMAl, trimethyl indium TMIn and phosphine PH3 on described GaP current expansion and ohmic contact layer 11, grow ruddiness N-AlGaInP transition and lower limit layer 12; The Multiple Quantum Well MQWsAlGaInP active area of growing on described ruddiness N-AlGaInP transition and lower limit layer 12, the trap of AlGaInP active area is built and is consisted of: trap (Al
xga
1-x) InP/ builds (Al
yga
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; The ruddiness P-AlGaInP upper limiting layer 14 that growth thickness is 0.5um～1.0um on described AlGaInP active area; The ruddiness P-GaP current extending 15 of growing on described ruddiness P-AlGaInP upper limiting layer 14;
4. epitaxial furnace furnace temperature is set within the scope of 680～700 degrees Celsius, the yellow ruddiness cascade layer 16 of growing on described ruddiness P-GaP current extending 15; In the present embodiment, it is 690 degrees Celsius that this step is selected furnace temperature;
5. epitaxial furnace furnace temperature is set within the scope of 700～740 degrees Celsius, the gold-tinted N-GaP current expansion of growing successively and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21 on described yellow ruddiness cascade layer 16; In the present embodiment, it is 725 degrees Celsius that this step is selected furnace temperature;
Can ensure that by programming each layer growth thickness meets above-mentioned thickness condition, obtains the white light LEDs epitaxial wafer shown in Fig. 1 thus.
The present embodiment provides a kind of manufacture method of White-light LED chip, and described manufacture method adopts above-mentioned white light LEDs epitaxial wafer, comprises the steps:
I. described white light LEDs epitaxial wafer is processed as to LED chip, its technological process as shown in Figure 2:
White light LEDs epitaxial wafer → cleaning → plating transparent electrode layer → transparency electrode figure photoetching → corrode → remove photoresist → platform graphics photoetching → dry etching → remove photoresist → annealing → S
io
2deposition → graph window photoetching → S
io
2corrode → remove photoresist → N utmost point figure photoetching → prerinse → plated film → peel off → anneal → P utmost point figure photoetching → plated film → peel off → grind → cutting → LED chip;
The technological process of making LED chip in this step is identical with the technological process of making chip of the prior art, the white light LEDs epitaxial wafer of the white light LEDs epitaxial wafer of just selecting for providing in the above-mentioned technical solutions of this embodiment.
II. on the green glow N-GaN of described LED chip contact layer 3, be provided with N electrode, and gold-tinted P-GaP current extending 21 tops are provided with P electrode, obtain the LED chip shown in Fig. 3.
Adopt its white light color rendering index of LED chip that technique scheme of the present invention obtains can reach 99.
Embodiment 2
The difference part of the present embodiment and embodiment 1 is, makes the technique of above-mentioned white light LEDs epitaxial wafer in the present embodiment, comprises the steps:
I. in epitaxial furnace, grow green luminescence layer and blue light-emitting, this step can be selected K465i MOCVD epitaxial furnace, and its growth course comprises the steps:
1. Sapphire Substrate 1 is placed in pallet and sends into epitaxial furnace, epitaxial furnace furnace temperature is set within the scope of 605 degrees Celsius, growing GaN resilient coating 2;
2. epitaxial furnace furnace temperature is set within the scope of 1055 degrees Celsius, growth green glow N-GaN contact layer 3;
3. epitaxial furnace furnace temperature is set within the scope of 685 degrees Celsius, taking nitrogen as carrier, growth green glow InGaN/GaN multiple quantum well light emitting layer 4;
4. epitaxial furnace furnace temperature is set within the scope of 995 degrees Celsius, growth green glow P-GaN contact layer 5;
5. epitaxial furnace furnace temperature is set within the scope of 905 degrees Celsius, growth blue green light cascade layer 6;
6. epitaxial furnace furnace temperature is set within the scope of 1055 degrees Celsius, growth blue light N-GaN contact layer 7;
7. epitaxial furnace furnace temperature is set within the scope of 685 degrees Celsius, taking nitrogen as carrier, growth blue light InGaN/GaN multiple quantum well light emitting layer 8;
8. epitaxial furnace furnace temperature is set within the scope of 995 degrees Celsius, growth blue light N-GaN contact layer 9;
II. change an epitaxial furnace, select equally K465i MOCVD epitaxial furnace, continued growth red light luminescent layer and Yellow light emitting layer, comprise
1. epitaxial furnace furnace temperature is set within the scope of 680 degrees Celsius, the red blue light cascade layer 10 of growing;
2. epitaxial furnace furnace temperature is set within the scope of 700 degrees Celsius, growth ruddiness N-GaP current expansion and ohmic contact layer 11;
3. utilize trimethyl gallium TMGa, trimethyl aluminium TMAl, trimethyl indium TMIn and phosphine PH3 on described GaP current expansion and ohmic contact layer 11, grow ruddiness N-AlGaInP transition and lower limit layer 12; The Multiple Quantum Well MQWsAlGaInP active area of growing on described ruddiness N-AlGaInP transition and lower limit layer 12, the trap of AlGaInP active area is built and is consisted of: trap (Al
xga
1-x) InP/ builds (Al
yga
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; The ruddiness P-AlGaInP upper limiting layer 14 that growth thickness is 0.5um～1.0um on described AlGaInP active area; The ruddiness P-GaP current extending 15 of growing on described ruddiness P-AlGaInP upper limiting layer 14;
4. epitaxial furnace furnace temperature is set within the scope of 680 degrees Celsius, the yellow ruddiness cascade layer 16 of growing on described ruddiness P-GaP current extending 15;
5. epitaxial furnace furnace temperature is set within the scope of 700 degrees Celsius, the gold-tinted N-GaP current expansion of growing successively and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21 on described yellow ruddiness cascade layer 16;
The white light color rendering index of the LED chip that the above-mentioned technological process of employing the present embodiment obtains can reach 96.
Embodiment 3
The difference part of the present embodiment and embodiment 1 and embodiment 2 is,
I. in epitaxial furnace, grow green luminescence layer and blue light-emitting, this step can be selected K465i MOCVD epitaxial furnace, and its growth course comprises the steps:
1. Sapphire Substrate 1 is placed in pallet and sends into epitaxial furnace, epitaxial furnace furnace temperature is set within the scope of 615 degrees Celsius, growing GaN resilient coating 2;
2. epitaxial furnace furnace temperature is set within the scope of 1065 degrees Celsius, growth green glow N-GaN contact layer 3;
3. epitaxial furnace furnace temperature is set within the scope of 695 degrees Celsius, taking nitrogen as carrier, growth green glow InGaN/GaN multiple quantum well light emitting layer 4;
4. epitaxial furnace furnace temperature is set within the scope of 1005 degrees Celsius, growth green glow P-GaN contact layer 5;
5. epitaxial furnace furnace temperature is set within the scope of 1005 degrees Celsius, growth blue green light cascade layer 6;
6. epitaxial furnace furnace temperature is set within the scope of 1065 degrees Celsius, growth blue light N-GaN contact layer 7;
7. epitaxial furnace furnace temperature is set within the scope of 695 degrees Celsius, taking nitrogen as carrier, growth blue light InGaN/GaN multiple quantum well light emitting layer 8;
8. epitaxial furnace furnace temperature is set within the scope of 1005 degrees Celsius, growth blue light N-GaN contact layer 9;
II. change an epitaxial furnace, select equally K465i MOCVD epitaxial furnace, continued growth red light luminescent layer and Yellow light emitting layer, comprise
1. epitaxial furnace furnace temperature is set within the scope of 700 degrees Celsius, the red blue light cascade layer 10 of growing;
2. epitaxial furnace furnace temperature is set within the scope of 740 degrees Celsius, growth ruddiness N-GaP current expansion and ohmic contact layer 11;
3. utilize trimethyl gallium TMGa, trimethyl aluminium TMAl, trimethyl indium TMIn and phosphine PH3 on described GaP current expansion and ohmic contact layer 11, grow ruddiness N-AlGaInP transition and lower limit layer 12; The Multiple Quantum Well MQWsAlGaInP active area of growing on described ruddiness N-AlGaInP transition and lower limit layer 12, the trap of AlGaInP active area is built and is consisted of: trap (Al
xga
1-x) InP/ builds (Al
yga
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; The ruddiness P-AlGaInP upper limiting layer 14 that growth thickness is 0.5um～1.0um on described AlGaInP active area; The ruddiness P-GaP current extending 15 of growing on described ruddiness P-AlGaInP upper limiting layer 14;
4. epitaxial furnace furnace temperature is set within the scope of 700 degrees Celsius, the yellow ruddiness cascade layer 16 of growing on described ruddiness P-GaP current extending 15;
5. epitaxial furnace furnace temperature is set within the scope of 740 degrees Celsius, the gold-tinted N-GaP current expansion of growing successively and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted Multiple Quantum Well AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21 on described yellow ruddiness cascade layer 16;
Obtain thus the white light LEDs epitaxial wafer shown in Fig. 1.
The white light color rendering index of the LED chip that the above-mentioned technological process of employing the present embodiment obtains can reach 97.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all execution modes.And the apparent variation of being extended out thus or variation are still among the protection range in the invention.
Claims (18)
1. a white light LEDs epitaxial wafer forms GaN resilient coating (2) in Sapphire Substrate (1), it is characterized in that:
On described GaN resilient coating (2), form successively green glow N-GaN contact layer (3), green glow InGaN/GaN multiple quantum well light emitting layer (4), green glow P-GaN contact layer (5), blue green light cascade layer (6), blue light N-GaN contact layer (7), blue light InGaN/GaN multiple quantum well light emitting layer (8), blue light P-GaN contact layer (9), red blue light cascade layer (10), ruddiness N-GaP current expansion and ohmic contact layer (11), ruddiness N-AlGaInP transition and lower limit layer (12), ruddiness Multiple Quantum Well AlGaInP luminescent layer (13), ruddiness P-AlGaInP upper limiting layer (14), ruddiness P-GaP current extending (15), yellow ruddiness cascade layer (16), gold-tinted N-GaP current expansion and ohmic contact layer (17), gold-tinted N-AlGaInP transition and lower limit layer (18), gold-tinted Multiple Quantum Well AlGaInP luminescent layer (19), gold-tinted P-AlGaInP upper limiting layer (20) and gold-tinted P-GaP current extending (21).
2. white light LEDs epitaxial wafer according to claim 1, is characterized in that:
The thickness of described green glow InGaN/GaN multiple quantum well light emitting layer (4) is that 1000nm～10000nm, wavelength are 530nm～540nm.
3. white light LEDs epitaxial wafer according to claim 2, is characterized in that:
The thickness of described green glow InGaN/GaN multiple quantum well light emitting layer (4) is 1800nm.
4. according to the white light LEDs epitaxial wafer described in claim 2 or 3, it is characterized in that:
The wavelength of described green glow InGaN/GaN multiple quantum well light emitting layer (4) is 535nm.
5. white light LEDs epitaxial wafer according to claim 4, is characterized in that:
The thickness of described blue light InGaN/GaN multiple quantum well light emitting layer (8) is that 1000nm～10000nm, wavelength are 460nm～470nm.
6. white light LEDs epitaxial wafer according to claim 5, is characterized in that:
The thickness of described blue light InGaN/GaN multiple quantum well light emitting layer (8) is 1900nm.
7. white light LEDs epitaxial wafer according to claim 6, is characterized in that:
Described blue light InGaN/GaN multiple quantum well light emitting layer (8) wavelength is 465nm.
8. white light LEDs epitaxial wafer according to claim 7, is characterized in that:
The thickness of described ruddiness Multiple Quantum Well AlGaInP luminescent layer (13) is that 500nm～5000nm, wavelength are 620nm～635nm.
9. white light LEDs epitaxial wafer according to claim 8, is characterized in that:
The thickness of described ruddiness Multiple Quantum Well AlGaInP luminescent layer (13) is 900nm.
10. white light LEDs epitaxial wafer according to claim 9, is characterized in that:
The wavelength of described ruddiness Multiple Quantum Well AlGaInP luminescent layer (13) is 625nm.
11. white light LEDs epitaxial wafers according to claim 10, is characterized in that:
The thickness of described gold-tinted Multiple Quantum Well AlGaInP luminescent layer (19) is that 500nm～5000nm, wavelength are 585nm～595nm.
12. white light LEDs epitaxial wafers according to claim 11, is characterized in that:
The thickness of described gold-tinted Multiple Quantum Well AlGaInP luminescent layer (19) is 1000nm.
13. white light LEDs epitaxial wafers according to claim 12, is characterized in that:
Described gold-tinted Multiple Quantum Well AlGaInP luminescent layer (19) wavelength is 590nm.
14. white light LEDs epitaxial wafers according to claim 13, is characterized in that:
The thickness of described ruddiness P-AlGaInP upper limiting layer (14) is 500nm～1000nm.
15. white light LEDs epitaxial wafers according to claim 14, is characterized in that:
The thickness of described ruddiness N-AlGaInP transition and lower limit layer (12) is 500nm～1000nm.
Make the technique of the arbitrary described white light LEDs epitaxial wafer of claim 1-15, it is characterized in that for 16. 1 kinds:
Comprise the steps:
I. in epitaxial furnace, grow green luminescence layer and blue light-emitting, comprise
1. Sapphire Substrate (1) is placed in pallet and sends into epitaxial furnace, epitaxial furnace furnace temperature is set within the scope of 605～615 degrees Celsius, growing GaN resilient coating (2);
2. epitaxial furnace furnace temperature is set within the scope of 1055～1065 degrees Celsius, growth green glow N-GaN contact layer (3);
3. epitaxial furnace furnace temperature is set within the scope of 685～695 degrees Celsius, taking nitrogen as carrier, growth green glow InGaN/GaN multiple quantum well light emitting layer (4);
4. epitaxial furnace furnace temperature is set within the scope of 995～1005 degrees Celsius, growth green glow P-GaN contact layer (5);
5. epitaxial furnace furnace temperature is set within the scope of 905～1005 degrees Celsius, growth blue green light cascade layer (6);
6. epitaxial furnace furnace temperature is set within the scope of 1055～1065 degrees Celsius, growth blue light N-GaN contact layer (7);
7. epitaxial furnace furnace temperature is set within the scope of 685～695 degrees Celsius, taking nitrogen as carrier, growth blue light InGaN/GaN multiple quantum well light emitting layer (8);
8. epitaxial furnace furnace temperature is set within the scope of 995～1005 degrees Celsius, growth blue light N-GaN contact layer (9);
II. continued growth red light luminescent layer and Yellow light emitting layer, comprise
1. epitaxial furnace furnace temperature is set within the scope of 680～700 degrees Celsius, the red blue light cascade layer (10) of growing;
2. epitaxial furnace furnace temperature is set within the scope of 700～740 degrees Celsius, growth ruddiness N-GaP current expansion and ohmic contact layer (11);
3. utilize trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and phosphine (PH3) at described GaP current expansion and ohmic contact layer (11) upper growth ruddiness N-AlGaInP transition and lower limit layer (12); In described ruddiness N-AlGaInP transition and the upper growth of lower limit layer (12) Multiple Quantum Well (MQWs) AlGaInP active area, the trap of AlGaInP active area is built and is consisted of: trap (AlxGa1-x) InP/ builds (AlyGa1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; The ruddiness P-AlGaInP upper limiting layer (14) that growth thickness is 0.5um～1.0um on described AlGaInP active area; At described ruddiness P-AlGaInP upper limiting layer (14) upper growth ruddiness P-GaP current extending (15);
4. epitaxial furnace furnace temperature is set within the scope of 680～700 degrees Celsius, at described ruddiness P-GaP current extending (15) the yellow ruddiness cascade layer of upper growth (16);
5. epitaxial furnace furnace temperature is set within the scope of 700～740 degrees Celsius, the gold-tinted N-GaP current expansion of growing successively and ohmic contact layer (17), gold-tinted N-AlGaInP transition and lower limit layer (18), gold-tinted Multiple Quantum Well AlGaInP luminescent layer (19), gold-tinted P-AlGaInP upper limiting layer (20) and gold-tinted P-GaP current extending (21) on described yellow ruddiness cascade layer (16);
Obtain thus white light LEDs epitaxial wafer.
The technique of 17. white light LEDs epitaxial wafers according to claim 16, is characterized in that:
Described Step II is carried out in another epitaxial furnace.
The manufacture method of 18. 1 kinds of White-light LED chips, described manufacture method adopts arbitrary described white light LEDs epitaxial wafer in claim 1-15, it is characterized in that, comprises the steps:
I. according to following technological process, described white light LEDs epitaxial wafer is processed:
White light LEDs epitaxial wafer → cleaning → plating transparent electrode layer → transparency electrode figure photoetching → corrode → remove photoresist → platform graphics photoetching → dry etching → remove photoresist → anneal → SiO2 deposition → graph window photoetching → SiO2 corrodes → removes photoresist → N utmost point figure photoetching → prerinse → plated film → peel off → anneal → P utmost point figure photoetching → plated film → peel off → grind → cutting → LED chip;
II. on green glow N-GaN contact layer (3), be provided with N electrode, and gold-tinted P-GaP current extending (21) top is provided with P electrode and obtains White-light LED chip.
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