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CN102586704A - High thermal conductivity graphite whisker/copper composite and preparation method thereof - Google Patents

High thermal conductivity graphite whisker/copper composite and preparation method thereof Download PDF

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CN102586704A
CN102586704A CN2012100809074A CN201210080907A CN102586704A CN 102586704 A CN102586704 A CN 102586704A CN 2012100809074 A CN2012100809074 A CN 2012100809074A CN 201210080907 A CN201210080907 A CN 201210080907A CN 102586704 A CN102586704 A CN 102586704A
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copper
plating
graphite whisker
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whisker
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CN102586704B (en
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何新波
刘骞
张昊明
任淑彬
吴茂
曲选辉
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University of Science and Technology Beijing USTB
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Abstract

本发明属于金属基复合材料研究领域,涉及一种高导热石墨晶须/铜复合材料及其制备方法。复合材料由基体纯铜和已镀覆的增强相高导热石墨晶须两部分组成,其中纯铜的体积分数为40%-70%,镀覆后的石墨晶须的体积分数为30%-60%。复合材料采用生产工艺步骤为:首先采用化学镀或盐浴镀方法,将铜或钼镀覆于石墨晶须的表面,形成1-2μm厚的镀层;然后将镀覆后的石墨晶须与铜粉按30-60:70-40的比例混合均匀,再通过SPS粉末冶金法在820-980℃下烧结制得石墨晶须/铜复合材料。本发明提供了一种用于电子封装领域的石墨晶须/铜复合材料的制备方法,其热导率高、热膨胀系数可控、致密高、易于加工等多项优点满足现代电子封装领域的要求。

Figure 201210080907

The invention belongs to the research field of metal matrix composite materials, and relates to a high thermal conductivity graphite whisker/copper composite material and a preparation method thereof. The composite material is composed of matrix pure copper and plated reinforced phase high thermal conductivity graphite whiskers, in which the volume fraction of pure copper is 40%-70%, and the volume fraction of graphite whiskers after plating is 30%-60% %. The production process steps of the composite material are as follows: first, copper or molybdenum is plated on the surface of graphite whiskers by chemical plating or salt bath plating to form a 1-2 μm thick coating; then the plated graphite whiskers are combined with copper The powder is mixed evenly at the ratio of 30-60:70-40, and then sintered at 820-980°C by SPS powder metallurgy to obtain graphite whisker/copper composite material. The invention provides a method for preparing a graphite whisker/copper composite material used in the field of electronic packaging, which has many advantages such as high thermal conductivity, controllable thermal expansion coefficient, high density, and easy processing to meet the requirements of the modern electronic packaging field .

Figure 201210080907

Description

一种高导热石墨晶须/铜复合材料的制备方法A kind of preparation method of high thermal conductivity graphite whisker/copper composite material

技术领域 technical field

本发明属于金属基复合材料技术领域,涉及一种高导热石墨晶须/铜复合材料的制备方法。  The invention belongs to the technical field of metal matrix composite materials, and relates to a preparation method of a high thermal conductivity graphite whisker/copper composite material. the

背景技术 Background technique

电子封装材料的开发与设计一直以来是电子设备热管理的重要一环,现代热管理要求电子封装材料具有高热导率(TC),低膨胀系数(CTE),加工性能良好以及较低的价格。Cu/Mo、Cu/W、Al/SiC、AlN等传统材料经常被用于电子封装领域,这些材料各自有一定局限性,如Cu/Mo、Cu/W密度过高,Al/SiC、AlN的CTE较高,高热导的金刚石复合材料则受限于价格和加工性能。 The development and design of electronic packaging materials has always been an important part of the thermal management of electronic equipment. Modern thermal management requires electronic packaging materials to have high thermal conductivity (TC), low coefficient of expansion (CTE), good processability and low price. Traditional materials such as Cu/Mo, Cu/W, Al/SiC, and AlN are often used in the field of electronic packaging. These materials have certain limitations, such as Cu/Mo, Cu/W density is too high, Al/SiC, AlN Diamond composite materials with high CTE and high thermal conductivity are limited by price and processing performance.

新一代石墨晶须具有低的热膨胀系数、高的纵向热导率,热导率最高可达1100 W/(m·K)、低密度,其良好的物理性能适合用于金属基电子封装材料的增强相。采用粉末冶金工艺将石墨晶须与铜基复合所制得的各项同性高导热的复合材料,其导热性能优异、热膨胀系数低、轻质且易加工、制备工艺简单、成本较低,具有广泛的应用前景。 The new generation of graphite whiskers has low thermal expansion coefficient, high longitudinal thermal conductivity, the highest thermal conductivity can reach 1100 W/(m K), low density, and its good physical properties are suitable for metal-based electronic packaging materials. enhanced phase. The isotropic high thermal conductivity composite material prepared by compounding graphite whiskers and copper matrix by powder metallurgy technology has excellent thermal conductivity, low thermal expansion coefficient, light weight and easy processing, simple preparation process and low cost, and has a wide range of applications. application prospects.

在复合材料的制备过程中,增强相与基体之间的界面结合状况对复合材料的性能有着很大的影响。研究表明,铜和碳进行复合时,由于界面润湿性差,使得复合材料的导热性能不佳。因此,如何加强界面结合是提高复合材料性能的关键。 During the preparation of composite materials, the interface bonding between the reinforcement phase and the matrix has a great influence on the performance of composite materials. Studies have shown that when copper and carbon are combined, the thermal conductivity of the composite material is poor due to poor interfacial wettability. Therefore, how to strengthen the interfacial bonding is the key to improving the performance of composite materials.

发明内容 Contents of the invention

       本发明的目的在于提供一种用高导热、低膨胀石墨晶须作为增强相,制备热膨胀系数可调、高导热铜基电子封装复合材料零件的方法。 The purpose of this invention is to provide a method for preparing copper-based electronic packaging composite parts with adjustable thermal expansion coefficient and high thermal conductivity by using high thermal conductivity and low expansion graphite whisker as a reinforcing phase.

       本发明采用化学镀或盐浴镀的方法对晶须进行表面金属化,增加铜-碳之间的润湿性,有效改善晶须与铜的界面结合,然后将处理后的晶须与铜粉均匀混合,最后采用等离子体放电烧结工艺制备高性能的石墨晶须/铜基复合材料。 The present invention adopts chemical plating or salt bath plating method to metallize the surface of whiskers, increase the wettability between copper and carbon, effectively improve the interface bonding between whiskers and copper, and then combine the treated whiskers with copper powder Mix evenly, and finally prepare a high-performance graphite whisker/copper-based composite material by using a plasma discharge sintering process.

一种高导热石墨晶须/铜复合材料的制备方法,其特征是使用高导热石墨晶须作增强相,先在石墨晶须表面用化学镀或盐浴镀的方法镀覆一层铜或钼,然后通过SPS粉末冶金工艺与铜粉进行复合,制备出高性能石墨晶须增强铜基复合材料; A preparation method of a high thermal conductivity graphite whisker/copper composite material is characterized in that the high thermal conductivity graphite whisker is used as a reinforcing phase, and a layer of copper or molybdenum is first plated on the surface of the graphite whisker by electroless plating or salt bath plating , and then compounded with copper powder through SPS powder metallurgy process to prepare high-performance graphite whisker reinforced copper matrix composite material;

所用的增强相是高导热,低膨胀的石墨晶须,长径比在10-70之间,晶须表面镀覆厚度0.1-2μm的铜或钼; The reinforcing phase used is graphite whisker with high thermal conductivity and low expansion, the aspect ratio is between 10-70, and the surface of the whisker is coated with copper or molybdenum with a thickness of 0.1-2 μm;

所选的已镀覆石墨晶须与铜粉的体积比为30-60:70-40,复合前要在球磨机上混合,球磨机转速为110-150转/分钟,时间为1.5-3小时。 The volume ratio of the selected coated graphite whiskers to copper powder is 30-60:70-40, and they should be mixed on a ball mill before compounding. The speed of the ball mill is 110-150 rpm, and the time is 1.5-3 hours.

  the

首先在石墨晶须进行表面金属镀覆,镀铜的主要工艺路线主要为:除油─粗化─敏化─活化─化学镀,镀液的组成:五水硫酸铜15g/L、甲醛5g/L、酒石酸钾钠14g/L、EDTA 19.5g/L 、氢氧化钠14.5g/L 、二联吡啶0.02g/L 、亚铁氰化钾0.01g/L。镀铜工艺条件:镀液pH为 12.0-12.5、 镀覆温度40-50℃、施镀时间2-15分钟。 Firstly, the surface metal plating is carried out on the graphite whisker. The main process route of copper plating is: degreasing─coarsening─sensitization─activation─electroless plating. The composition of the plating solution: copper sulfate pentahydrate 15g/L, formaldehyde 5g/L L. Potassium sodium tartrate 14g/L, EDTA 19.5g/L, sodium hydroxide 14.5g/L, bipyridine 0.02g/L, potassium ferrocyanide 0.01g/L. Copper plating process conditions: the pH of the plating solution is 12.0-12.5, the plating temperature is 40-50°C, and the plating time is 2-15 minutes.

镀钼的主要工艺路线为:除油─混粉─真空微蒸发镀。将除油后的石墨晶须与加有一定量仲钼酸铵的NaCl/KCl混合盐放入球磨机中混合30分钟,混合盐中NaCl与KCl的摩尔比是1:1,混合盐中仲钼酸铵的质量分数为10%。混合均匀后,将混合物在保护气氛下加热至900℃-1100℃,在石墨晶须表面形成钼层。 The main process route of molybdenum plating is: degreasing-powder mixing-vacuum micro-evaporation plating. Put the graphite whisker after degreasing and the NaCl/KCl mixed salt with a certain amount of ammonium paramolybdate into the ball mill and mix for 30 minutes. The molar ratio of NaCl and KCl in the mixed salt is 1:1, and the paramolybdic acid in the mixed salt The mass fraction of ammonium is 10%. After mixing evenly, the mixture is heated to 900°C-1100°C under a protective atmosphere to form a molybdenum layer on the surface of the graphite whiskers.

镀覆后的石墨晶须与不同粒度的铜粉按照一定的比例在球磨机上混合1.5-3小时,球磨机转速为110-150转/分钟,其中石墨晶须与铜粉的体积比为30-60:70-40,不同粒度铜粉可按质量比随意搭配。 The coated graphite whiskers and copper powders of different particle sizes are mixed in a ball mill for 1.5-3 hours according to a certain ratio, the ball mill speed is 110-150 rpm, and the volume ratio of graphite whiskers to copper powder is 30-60 :70-40, copper powders of different particle sizes can be freely matched according to the mass ratio.

       最后将混好的粉末放入石墨模具内,置于SPS烧结炉中,采用SPS粉末冶金工艺制备复合材料零件。烧结温度为820-980℃,压力为20-70MPa,保温时间2-5分钟。 Finally, put the mixed powder into the graphite mold, place it in the SPS sintering furnace, and use the SPS powder metallurgy process to prepare composite material parts. The sintering temperature is 820-980°C, the pressure is 20-70MPa, and the holding time is 2-5 minutes.

本发明技术采用等离子体放电烧结法(SPS)制备石墨晶须增强铜基复合材料的制备方法。通过加入钼或铜的中间层,增加了晶须与铜的润湿性,改善了增强相与基体之间的界面状态,大大降低了界面热阻,特别是钼层的加入,使原本增强相与基体之间弱的机械结合变成化学结合。采用此法制备的石墨晶须/复合材料性能优异,其优点包括: The technology of the invention adopts the plasma discharge sintering method (SPS) to prepare the preparation method of graphite whisker reinforced copper matrix composite material. By adding an intermediate layer of molybdenum or copper, the wettability of the whiskers and copper is increased, the interface state between the reinforcement phase and the matrix is improved, and the interface thermal resistance is greatly reduced. Especially the addition of the molybdenum layer makes the original reinforcement phase A weak mechanical bond to the substrate becomes a chemical bond. The graphite whiskers/composites prepared by this method have excellent performance, and its advantages include:

1)        具有良好的导热率,能够将半导体芯片在工作时所产生的热量及时地散发出去;  1) It has good thermal conductivity and can dissipate the heat generated by the semiconductor chip in time;

2)        可调控的热膨胀系数,与Si或GaAs等芯片材料相匹配,以避免芯片的热应力损坏; 2) Adjustable coefficient of thermal expansion, matching with chip materials such as Si or GaAs, to avoid thermal stress damage of the chip;

3)        复合材料密度小,一定的强度和刚度; 3) Composite materials have low density and certain strength and rigidity;

4)        产品性能各项同性,易于加工,生产成本较低; 4) The performance of the product is isotropic, easy to process, and the production cost is low;

5)        对晶须表面进行金属镀覆处理,改善了增强相与基体之间的界面状态,使复合材料综合性能得到大大提高。 5) The metal plating treatment on the surface of the whisker improves the interface state between the reinforcement phase and the matrix, and greatly improves the comprehensive performance of the composite material.

附图说明 Description of drawings

图1为本工艺的流程图。 Fig. 1 is the flow chart of this process.

具体实施方式 Detailed ways

以下将结合实例对本发明技术方案作进一步的详述: The technical scheme of the present invention will be described in further detail below in conjunction with examples:

实施例1:Example 1:

采用化学镀铜在石墨晶须表面镀覆1μm的铜层:首先将石墨晶须放入20%NaOH溶液中煮沸15分钟后,用蒸馏水冲洗至中性。再放入20%HNO3溶液中煮沸15分钟,用蒸馏水冲洗至中性。将洗好的石墨晶须放入20ml/LHCl+20g/LSnCl2溶液中强力搅拌15分钟,至溶液呈青灰色时说明反应完全,水洗后将石墨晶须加入20ml/L HCl+0.5g/LPdCl2溶液强力搅拌15分钟,溶液呈浅褐色时说明反应完全。将敏化活化后的石墨晶须倒入镀铜镀液中,镀液配方为五水硫酸铜15g/L、酒石酸钾钠14g/L、EDTA19.5g/L、二联吡啶0.02g/L、亚铁氰化钾0.01g/L。并加入甲醛[w(HCHO)=36%]10ml/L进行表面镀铜处理 ,镀覆pH为12、温度45℃,施镀时间为3分钟。镀覆完毕后加入蒸馏水1000ml以稀释镀液。采用真空抽滤的方法滤去镀液后,加入用大量蒸馏水将镀铜晶须水洗至中性,放入干燥箱烘干。得到表面镀覆有1μm的铜的石墨晶须。 Electroless copper plating is used to plate a 1 μm copper layer on the surface of graphite whiskers: First, put graphite whiskers in 20% NaOH solution and boil for 15 minutes, then rinse with distilled water until neutral. Then put it into 20% HNO 3 solution and boil for 15 minutes, rinse with distilled water until neutral. Put the washed graphite whiskers into 20ml/LHCl+20g/LSnCl 2 solution and stir vigorously for 15 minutes. When the solution turns blue-gray, the reaction is complete. After washing, add 20ml/L HCl+0.5g/LPdCl to the graphite whiskers 2 The solution was vigorously stirred for 15 minutes, and the reaction was complete when the solution turned light brown. Pour the sensitized and activated graphite whiskers into the copper plating solution. The formula of the solution is copper sulfate pentahydrate 15g/L, potassium sodium tartrate 14g/L, EDTA 19.5g/L, bipyridine 0.02g/L, Potassium ferrocyanide 0.01g/L. And add formaldehyde [w (HCHO) = 36%] 10ml/L for surface copper plating treatment, the plating pH is 12, the temperature is 45 ℃, and the plating time is 3 minutes. Add 1000ml of distilled water after plating to dilute the plating solution. After the plating solution is filtered out by vacuum filtration, a large amount of distilled water is added to wash the copper-plated whiskers until neutral, and then put into a drying oven for drying. Graphite whiskers whose surfaces were plated with 1 μm of copper were obtained.

取上述镀铜石墨晶须与粒度为40μm的铜粉按体积比30:70的比例在行星式球磨机中混合2小时,球磨机转速为120转/分钟。混合均匀后,将混合粉末放入等离子烧结炉(SPS)烧结,烧结温度为890℃,烧结压力为30MPa,保温3分钟。即得石墨晶须/铜复合材料。 The above-mentioned copper-coated graphite whiskers were mixed with copper powder with a particle size of 40 μm in a volume ratio of 30:70 in a planetary ball mill for 2 hours, and the speed of the ball mill was 120 rpm. After mixing evenly, put the mixed powder into a plasma sintering furnace (SPS) for sintering, the sintering temperature is 890°C, the sintering pressure is 30MPa, and the temperature is kept for 3 minutes. That is, the graphite whisker/copper composite material is obtained.

实施例2Example 2

采用盐浴镀的方法在石墨晶须表面镀覆一层厚为1.5μm的钼层。将石墨晶须与加有一定量仲钼酸铵的NaCl/KCl混合盐放入球磨机中混合30分钟,混合盐中NaCl与KCl的摩尔比是1:1,混合盐中仲钼酸铵的质量分数为10%。混合均匀后,放入带有保护气氛的管式炉中加热至1000℃,保温120分钟后随炉冷却。将镀好的晶须水洗后过筛,去除多余的杂质,得到表面镀钼的石墨晶须。采用此工艺在石墨晶须的表面均匀的镀覆一层厚度为1.5μm的钼层,石墨晶须与钼层之间反应生成碳化钼层。 A molybdenum layer with a thickness of 1.5 μm was coated on the graphite whisker surface by salt bath plating. Graphite whiskers and NaCl/KCl mixed salt with a certain amount of ammonium paramolybdate added were put into the ball mill and mixed for 30 minutes. The molar ratio of NaCl and KCl in the mixed salt was 1:1, and the mass fraction of ammonium paramolybdate in the mixed salt was 10%. After mixing evenly, put it into a tube furnace with a protective atmosphere and heat it to 1000°C, keep it warm for 120 minutes and then cool it with the furnace. The coated whiskers are washed with water and then sieved to remove excess impurities to obtain molybdenum-coated graphite whiskers. Using this process, a molybdenum layer with a thickness of 1.5 μm is uniformly plated on the surface of the graphite whisker, and the graphite whisker and the molybdenum layer react to form a molybdenum carbide layer.

取粒度为40μm的铜粉与镀钼石墨晶须按体积比70:30的比例在行星式球磨机中混合2小时,球磨机转速为120转/分钟。混合均匀后,将混合粉末放入等离子烧结炉(SPS)烧结,烧结温度为900℃,烧结压力为50MPa,保温5分钟。即得石墨晶须/铜复合材料。 Copper powder with a particle size of 40 μm and molybdenum-coated graphite whiskers were mixed in a planetary ball mill at a ratio of 70:30 by volume for 2 hours, and the speed of the ball mill was 120 rpm. After mixing evenly, put the mixed powder into a plasma sintering furnace (SPS) for sintering, the sintering temperature is 900°C, the sintering pressure is 50MPa, and the temperature is kept for 5 minutes. That is, the graphite whisker/copper composite material is obtained.

实施例3Example 3

采用盐浴镀的方法在石墨晶须表面镀覆一层厚为1μm的钼层。将石墨晶须与加有一定量仲钼酸铵的NaCl/KCl混合盐放入球磨机中混合30分钟,混合盐中NaCl与KCl的摩尔比是1:1,混合盐中仲钼酸铵的质量分数为10%。混合均匀后,放入带有保护气氛的管式炉中加热至1000℃,保温60分钟后随炉冷却。将镀好的晶须水洗后过筛,去除多余的杂质,得到表面镀钼的石墨晶须。采用此工艺在石墨晶须的表面均匀的镀覆一层厚度为1μm的钼层,石墨晶须与钼层之间反应生成碳化钼层。 A molybdenum layer with a thickness of 1 μm was plated on the surface of graphite whiskers by salt bath plating. Graphite whiskers and NaCl/KCl mixed salt with a certain amount of ammonium paramolybdate added were put into the ball mill and mixed for 30 minutes. The molar ratio of NaCl and KCl in the mixed salt was 1:1, and the mass fraction of ammonium paramolybdate in the mixed salt was 10%. After mixing evenly, put it into a tube furnace with a protective atmosphere and heat it to 1000°C, keep it warm for 60 minutes and then cool it with the furnace. The coated whiskers are washed with water and then sieved to remove excess impurities to obtain molybdenum-coated graphite whiskers. Using this process, a molybdenum layer with a thickness of 1 μm is evenly plated on the surface of the graphite whisker, and the graphite whisker and the molybdenum layer react to form a molybdenum carbide layer.

取粒度为20μm的铜粉与镀钼石墨晶须按体积比50:50的比例在行星式球磨机中混合2小时,球磨机转速为130转/分钟。混合均匀后,将混合粉末放入等离子烧结炉(SPS)烧结,烧结温度为900℃,烧结压力为50MPa,保温5分钟。即得石墨晶须/铜复合材料。 Copper powder with a particle size of 20 μm and molybdenum-coated graphite whiskers were mixed in a planetary ball mill at a ratio of 50:50 by volume for 2 hours, and the speed of the ball mill was 130 rpm. After mixing evenly, put the mixed powder into a plasma sintering furnace (SPS) for sintering, the sintering temperature is 900°C, the sintering pressure is 50MPa, and the temperature is kept for 5 minutes. That is, the graphite whisker/copper composite material is obtained.

实施例4Example 4

采用盐浴镀的方法在石墨晶须表面镀覆一层厚为0.5μm的钼层。将石墨晶须与加有一定量仲钼酸铵的NaCl/KCl混合盐放入球磨机中混合30分钟,混合盐中NaCl与KCl的摩尔比是1:1,混合盐中仲钼酸铵的质量分数为10%。混合均匀后,放入带有保护气氛的管式炉中加热至1000℃,保温40分钟后随炉冷却。将镀好的晶须水洗后过筛,去除多余的杂质,得到表面镀钼的石墨晶须。采用此工艺在石墨晶须的表面均匀的镀覆一层厚度为0.5μm的钼层,石墨晶须与钼层之间反应生成碳化钼层。 A molybdenum layer with a thickness of 0.5 μm was coated on the surface of graphite whiskers by salt bath plating. Graphite whiskers and NaCl/KCl mixed salt with a certain amount of ammonium paramolybdate added were put into the ball mill and mixed for 30 minutes. The molar ratio of NaCl and KCl in the mixed salt was 1:1, and the mass fraction of ammonium paramolybdate in the mixed salt was 10%. After mixing evenly, put it into a tube furnace with a protective atmosphere and heat it to 1000°C, keep it warm for 40 minutes and then cool down with the furnace. The coated whiskers are washed with water and then sieved to remove excess impurities to obtain molybdenum-coated graphite whiskers. Using this process, a molybdenum layer with a thickness of 0.5 μm is uniformly plated on the surface of the graphite whisker, and the graphite whisker and the molybdenum layer react to form a molybdenum carbide layer.

取粒度为20μm的铜粉、70μm的铜粉镀钼石墨晶须按体积比石墨晶须:铜(20μm):铜(70μm)=50:10:40的比例在行星式球磨机中混合3小时,球磨机转速为150转/分钟。混合均匀后,将混合粉末放入等离子烧结炉(SPS)烧结,烧结温度为890℃,烧结压力为30MPa,保温5分钟。即得石墨晶须/铜复合材料。 Get particle size and be that the copper powder of 20 μ m, the molybdenum-coated graphite whisker of copper powder of 70 μ m are mixed in planetary ball mill for 3 hours by volume ratio graphite whisker: copper (20 μ m): the ratio of copper (70 μ m)=50:10:40, The rotational speed of the ball mill was 150 rpm. After mixing evenly, put the mixed powder into a plasma sintering furnace (SPS) for sintering, the sintering temperature is 890°C, the sintering pressure is 30MPa, and the temperature is kept for 5 minutes. That is, the graphite whisker/copper composite material is obtained.

Claims (4)

1. the preparation method of a high conductive graphite whisker/carbon/carbon-copper composite material; It is characterized in that using high conductive graphite whisker to make wild phase; The method plating layer of copper or the molybdenum that plate with electroless plating or salt bath on the graphite whisker surface earlier; Carry out compoundly then through SPS powder metallurgical technique and copper powder, prepare high-performance graphite whisker copper matrix composites reinforced;
Used wild phase is high heat conduction, the graphite whisker of low bulk, length-to-diameter ratio between 10-70, copper or the molybdenum of whisker coating surface thickness 0.1-2 μ m;
The volume ratio of selected graphite whisker of plating and copper powder is 30-60:70-40, will on ball mill, mix before compound, and drum's speed of rotation is 110-150 rev/min, and the time is 1.5-3 hour.
2. according to the preparation method of the described high conductive graphite whisker/carbon/carbon-copper composite material of claim 1; It is characterized in that: adopt the SPS powder metallurgical technique that the graphite whisker and the copper powder of metal lining coating are carried out compound tense, temperature is that 820-980 ℃, pressure are 20-70MPa, soaking time 2-5 minute.
3. according to the preparation method of the described high conductive graphite whisker/carbon/carbon-copper composite material of claim 1; It is characterized in that: adopt the SPS powder metallurgical technique that the graphite whisker and the copper powder of metal lining coating are carried out compound tense; Selected copper powder granularity is at 17-80 μ m, and different Cu powder degree volume proportion can be allocated arbitrarily.
4. according to the preparation method of the described high conductive graphite whisker/carbon/carbon-copper composite material of claim 1; It is characterized in that: at first carry out the surface metal plating at graphite whisker; Copper-plated operational path is: oil removing-alligatoring-sensitization-activation-electroless plating, the composition of plating bath: cupric sulfate pentahydrate 15g/L, formaldehyde 5g/L, Seignette salt 14g/L, EDTA 19.5g/L, sodium hydroxide 14.5g/L, second bipyridine 0.02g/L, yellow prussiate of potash 0.01g/L; The copper-plating technique condition is: plating bath pH is 12.0-12.5, plating temperature 40-50 ℃, plating time 2-15 minute;
The little evaporation plating of vacuum that the operational path of plating molybdenum is: oil removing-mixing powder-; Graphite whisker after the oil removing put into the NaCl/KCl mixing salt that is added with a certain amount of ammonium paramolybdate mix 30 minutes in the ball mill; The mol ratio of NaCl and KCl is 1:1 in the mixing salt, and the massfraction of ammonium paramolybdate is 10% in the mixing salt; After mixing, mixture is heated to 900 ℃-1100 ℃ under protective atmosphere, forms molybdenum layer on the graphite whisker surface.
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CN106521230A (en) * 2016-12-06 2017-03-22 湖南科技大学 Graphite flake/copper composite material used for vertical directional heat dissipation, and preparation method thereof
CN106521230B (en) * 2016-12-06 2018-03-09 湖南科技大学 A kind of graphite flakes/carbon/carbon-copper composite material of vertical orientation heat transmission and preparation method thereof
CN108796258A (en) * 2018-06-27 2018-11-13 北京科技大学 A kind of preparation method of high heat conduction isotropic graphite ball enhancing Cu-base composites
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