CN102580941A - Cleaning method and cleaning and drying equipment for improving cleanness of wafer - Google Patents
Cleaning method and cleaning and drying equipment for improving cleanness of wafer Download PDFInfo
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- CN102580941A CN102580941A CN2012100453854A CN201210045385A CN102580941A CN 102580941 A CN102580941 A CN 102580941A CN 2012100453854 A CN2012100453854 A CN 2012100453854A CN 201210045385 A CN201210045385 A CN 201210045385A CN 102580941 A CN102580941 A CN 102580941A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 202
- 238000001035 drying Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000007921 spray Substances 0.000 claims abstract description 13
- 239000012530 fluid Substances 0.000 claims description 57
- 239000000126 substance Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 13
- 229940095676 wafer product Drugs 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 96
- 239000008187 granular material Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The invention provides a cleaning and drying method for improving the cleanness of a wafer. The method comprises the following steps of: supplying a cleaning table, and horizontally putting the wafer on the cleaning table; arranging a cleaning sprayer above the circle center of the wafer, wherein the liquid outlet direction of the cleaning sprayer is inclined with a vertical direction of the wafer; starting the wafer to rotate horizontally, and starting the cleaning sprayer to move horizontally; starting a cleaning process, wherein the cleaning sprayer sprays out cleaning solution to the surface of the wafer, and the cleaning sprayer horizontally moves to a position deflected away from the circle center of the wafer and stops moving; and finishing cleaning, wherein the cleaning sprayer stops supplying the cleaning solution, and the wafer continues to rotate horizontally to be dried. The invention also provides cleaning and drying equipment. According to the method and the equipment, the cleanness of the wafer can be improved greatly; the problem about residues of liquid impurities and granular impurities is solved; the equipment is easy and convenient to improve; the cost is low; and the performance, the yield and the reliability of a wafer product are improved, and the process cost is reduced.
Description
Technical field
The present invention relates to a kind of method for manufacturing integrated circuit, relate in particular to a kind of cleaning drying method and cleaning drying equipment that can improve the wafer cleaner degree.
Background technology
In the manufacturing process of integrated circuit, the cleanliness factor of crystal column surface and surface state are vital to high-quality silicon device technology.If surface quality does not reach requirement, no matter how outstandingly other processing step is controlled, also is impossible obtain high-quality semiconductor devices.The contamination of removing on the crystal column surface no longer is final requirement.
Up to the present, cleaning method has many kinds, mainly contains physics and cleans and Chemical cleaning.Wherein chemical cleaning method is comparatively commonly used, but in the drying after cleaning, has a little liquid residue sometimes, influences the cleanliness factor of crystal column surface.
Fig. 1 is the cleaning drying method of wafer in the prior art, and is as shown in Figure 1, and wafer common in the prior art cleans the drying method; Wafer 10 is positioned on the rinsing table 30, cleans 11 tops, the center of circle that shower nozzle 20 vertical fixing are arranged at wafer 10, in cleaning process; Wafer 10 self rotates, and cleans on shower nozzle 20 ejection cleaning fluid to wafers 10 surfaces, and wafer 10 rotates through self liquid is brought to wafer 10 other positions; Said method can guarantee that liquid distribution is even, still, owing to clean 11 tops, the center of circle that shower nozzle 20 is fixed in wafer 10; Then the center of circle 11 place's distribute of wafer 10 are maximum; And the centrifugal force at 11 places, the center of circle of wafer 10 is minimum, causes the especially problem that can't thoroughly remove of the liquid residue impurity at 11 places, the center of circle of wafer 10 surfaces, and then influences cleannes, yield rate and the reliability of wafer.
Summary of the invention
The purpose of this invention is to provide a kind of wafer that can reduce cleans drying process rear impurity liquid residue cleaning drying method problem, that can improve the wafer cleaner degree and cleans drying equipment.
For addressing the above problem, the present invention provides a kind of cleaning drying method that can improve the wafer cleaner degree, comprising:
One rinsing table is provided, wafer level is positioned on the said rinsing table;
With cleaning the top, the center of circle that shower nozzle is arranged at said wafer, the fluid direction of said cleaning shower nozzle favours the vertical line direction of said wafer;
Wafer starts horizontal rotation, and said cleaning shower nozzle startup moves horizontally;
The beginning cleaning process, said cleaning shower nozzle ejection cleaning fluid is to crystal column surface, and said cleaning shower nozzle is moved horizontally to the position of departing from the said wafer center of circle to be stopped;
Finish to clean, said cleaning shower nozzle stop supplies cleaning fluid, said wafer continues horizontal rotation, to dry said wafer.
Further, said cleaning shower nozzle promptly begins to spray cleaning fluid from being positioned at top, the wafer center of circle.
Further, said cleaning shower nozzle begins to spray cleaning fluid after moving to and departing from the said wafer center of circle.
Further, said cleaning shower nozzle begins to spray cleaning fluid after moving to and departing from the said wafer center of circle 3～5mm.
Further, to cleaning the drying method, the angle of the fluid direction of said cleaning shower nozzle and the vertical line direction of said wafer is 3～10 °.
Further, to cleaning the drying method, in cleaning process, the position that said cleaning shower nozzle is moved horizontally to the 5～25mm that departs from the said wafer center of circle stops.Wherein, said cleaning shower nozzle is at the uniform velocity mobile, and translational speed is 5～25mm/min.
Further, to cleaning the drying method, the rotating speed of said wafer is 1000～2000 rev/mins.
Further, to cleaning the drying method, said cleaning fluid is deionized water or chemical cleaning solution.
The present invention also provides a kind of cleaning that can improve the wafer cleaner degree to dry equipment, and comprising: rinsing table, wafer level are positioned on the said rinsing table; Clean shower nozzle, said cleaning shower nozzle is positioned at said wafer top and can moves horizontally, and the fluid direction of said cleaning shower nozzle favours the vertical line direction of said wafer.
Further, to cleaning drying equipment, the angle of the fluid direction of said cleaning shower nozzle and the vertical line direction of said wafer is 3～10 °.
Further, said cleaning shower nozzle can move to the position of the 5～25mm that departs from the said wafer center of circle from said wafer center of circle upper horizontal.
Further, the angle of the vertical line direction of the fluid direction of said cleaning shower nozzle and said wafer is 3～10 °.
Further, said cleaning dries equipment and also comprises the feed flow pipeline, and an end of said feed flow pipeline links to each other with outside liquid feed device, and the other end links to each other with said cleaning shower nozzle.
Further, said cleaning shower nozzle is fixedly connected with said feed flow pipeline, and the fluid direction of said cleaning shower nozzle is through regulating the control of feed flow pipeline.
Further, said cleaning fluid is deionized water or chemical cleaning solution.
In sum; The cleaning drying method of wafer according to the invention and clean drying equipment favours the vertical line direction of said wafer through the fluid direction that said cleaning shower nozzle is set, with in cleaning process; Increase the cleaning dynamics of horizontal direction, thereby improve the cleannes of wafer; Simultaneously, clean shower nozzle and when the ejection cleaning fluid, move horizontally, make the more even distribution of cleaning fluid, avoid on the wafer the residual cleaning fluid of same position residual too much, and avoid that the wafer circle centre position has liquid residue because the centrifugal force of circle centre position is minimum when causing drying.
In addition, clean shower nozzle and after departing from wafer center of circle certain distance, begin to spray cleaning fluid, further reduced the possibility of wafer circle centre position liquid residue, can greatly improve the wafer cleaner degree, reduce the residue problem of liquid impurity and granule foreign; Simultaneously, the improvement of cleaning drying equipment is simple, with low cost, in the performance, yield rate and the reliability that improve product wafer, has practiced thrift the technology cost.
Description of drawings
Fig. 1 is the structural representation that the cleaning of wafer in the prior art dries equipment.
Fig. 2 is the schematic flow sheet of the cleaning drying method of wafer in one embodiment of the invention.
Fig. 3～Fig. 4 is the brief configuration sketch map in the cleaning drying process of wafer in one embodiment of the invention.
The specific embodiment
For making content of the present invention clear more understandable,, content of the present invention is described further below in conjunction with Figure of description.Certainly the present invention is not limited to this specific embodiment, and the general replacement that those skilled in the art knew also is encompassed in protection scope of the present invention.
Secondly, the present invention utilizes sketch map to carry out detailed statement, and when instance of the present invention was detailed, for the ease of explanation, sketch map did not amplify according to general ratio is local, should be with this as to qualification of the present invention.
Fig. 2 is the schematic flow sheet of the cleaning drying method of wafer in one embodiment of the invention.In conjunction with Fig. 2, the present invention provides a kind of cleaning drying method that can improve the wafer cleaner degree, may further comprise the steps:
Step S01 a: rinsing table is provided, wafer level is positioned on the said rinsing table;
Step S02: will clean the top, the center of circle that shower nozzle is arranged at said wafer, the fluid direction of said cleaning shower nozzle favours the vertical line direction of said wafer;
Step S03: wafer starts horizontal rotation, and said cleaning shower nozzle startup moves horizontally;
Step S04: the beginning cleaning process, said cleaning shower nozzle ejection cleaning fluid is to crystal column surface, and said cleaning shower nozzle is moved horizontally to the position of departing from the said wafer center of circle to be stopped;
Step S05: finish to clean, said cleaning shower nozzle stop supplies cleaning fluid, said wafer continues horizontal rotation, to dry said wafer.
Fig. 3～Fig. 4 is the brief configuration sketch map in the cleaning drying process of wafer in one embodiment of the invention.Below in conjunction with Fig. 2～Fig. 4, specify the cleaning drying method that can improve the wafer cleaner degree according to the invention:
In step S01, a rinsing table 300 is provided, wafer 100 is placed horizontally on the said rinsing table 300; This rinsing table 300 is used for fixing wafer 100 and drives wafer 100 and rotate for also being provided with wafer mounting apparatus (not indicating among the figure).
Then, in step S02, with cleaning 101 tops, the center of circle that shower nozzle 200 is arranged at said wafer 100, the fluid direction of said cleaning shower nozzle 200 favours said wafer 100; The scope of the angle a of the fluid direction of said cleaning shower nozzle 200 and the vertical line direction of said wafer 100 is 3～10 °; The fluid direction and the said wafer 100 of said cleaning shower nozzle 200 have certain angle; Can make cleaning fluid have the impulse force of a horizontal direction; Thereby be reduced in the residual of wafer 100 surfaces, and improve cleansing power wafer 100 surfaces.
In step S03, wafer 100 starts horizontal rotation, utilizes wafer mounting apparatus to drive wafer 100 and horizontally rotates around the wafer center of circle 101, and simultaneously said cleaning shower nozzle 200 startups move horizontally.The rotating speed of said wafer 100 is 1000～2000 rev/mins, and is under this speed conditions, best to the cleaning performance of wafer 100.
In step S04, the beginning cleaning process, said cleaning shower nozzle 200 ejection cleaning fluid to wafers 100 surfaces, said cleaning shower nozzle 200 is moved horizontally to the position of departing from the said wafer center of circle 101 to be stopped.Said cleaning fluid is deionized water or chemical cleaning solution.
Wherein, said cleaning shower nozzle 200 promptly begins to spray cleaning fluid from being positioned at 101 tops, the wafer center of circle, and cleaning process is easy to control; Or said cleaning shower nozzle 200 moves to and begins to spray cleaning fluid after departing from the said wafer center of circle 101; For example move to and begin to spray cleaning fluid after departing from the said wafer center of circle 3～5mm; That wherein preferable is 4mm; Said cleaning shower nozzle 200 begins to spray cleaning fluid after departing from the wafer center of circle 101, cleaning wafer 100 time, avoid the residual of the wafer center of circle 101 place's impurity better comprehensively.
In the present embodiment; The position that said cleaning shower nozzle 200 is moved horizontally to the 5～25mm that departs from the said wafer center of circle 101 stops; Depart from comprehensive cleaning that can reach even wafer 100 surfaces within the scope that the wafer center of circle 101 is controlled at 5～25mm, and avoid residual at the impurity particle in the wafer center of circle 101.In preferred embodiment; Said cleaning shower nozzle 200 at the uniform velocity horizontal linear moves; The time of usually cleaning, the scope of preferable translational speed was at 5～25mm/min about 1 minute, stopped thereby the distance that moves to the said wafer of the distance center of circle 101 is wafer 100 surfaces of 5～25mm.In addition, the at the uniform velocity curvilinear motion of said cleaning shower nozzle 200, at the uniform velocity broken line motion or motion modes such as speed change curvilinear motion, change speed linear motion, the motion mode of the cleaning shower nozzle 200 that other can be realized is all within thought range of the present invention.
Step S05: finish to clean, said cleaning shower nozzle 200 stop supplies cleaning fluids, said wafer 100 continues horizontal rotation, to dry said wafer 100.
In conjunction with above-mentioned cleaning drying method and Fig. 3～Fig. 4, the present invention also provides a kind of cleaning that can improve the wafer cleaner degree to dry equipment, and comprising: rinsing table 300, wafer 100 are placed horizontally on the said rinsing table 300; Clean shower nozzle 200, said cleaning shower nozzle 200 is positioned at said wafer 100 tops and can moves horizontally, and the fluid direction of said cleaning shower nozzle 200 favours said wafer 100.
Wherein, the angle a of the vertical line direction of the fluid direction of said cleaning shower nozzle 200 and said wafer is 3～10 °.In addition, said cleaning dries equipment and also comprises feed flow pipeline 201, and an end of said feed flow pipeline 201 links to each other with outside liquid feed device (not indicating among the figure), and the other end links to each other with said cleaning shower nozzle 200.Said cleaning shower nozzle 200 can be fixedly connected with said feed flow pipeline 201, and the fluid direction of then said cleaning shower nozzle 200 can be through 201 controls of feed flow pipeline; Or said cleaning shower nozzle 200 and said feed flow pipeline 201 flexible connections, the fluid direction of said cleaning shower nozzle 200 can be cleaned shower nozzle 200 controls through regulating.The regulative mode of the fluid direction of the connected mode of said cleaning shower nozzle 200 and said feed flow pipeline 201 and cleaning shower nozzle 200 is not limited by the foregoing description.Said cleaning shower nozzle 200 can move to the position of the 5～25mm that departs from the said wafer center of circle 101 from the said wafer center of circle 101 upper horizontal.Cleaning fluid can be deionized water or chemical cleaning solution.
Table one is the comparison sketch map that the cleaning of prior art dries the impurity particle number that wafer cleaning drying back increases in back and one embodiment of the invention.At first select very clean wafer to test; So the granule number before test on the wafer is few; No matter using deionized water still is that chemical cleaning solution cleans; Experience all has some residual particles after the cleaning process inevitably, and being changed to of the granule number that table one showed only experienced the impurity particle number that increases at crystal column surface behind the cleaning step.Certainly, different with this test is that wafer can residually have a large amount of residual impurity particles before cleaning in actual production process, after cleaning, had the minimizing of obvious residual impurity particle.Can find out that from table one this wafer according to the invention cleans the drying method can reduce the granule number of residual impurity, and then has greatly improved cleannes, yield rate and the reliability of wafer.
Table one
| Granule number before the wafer sort | Adopt the granule number after prior art is cleaned and dried | The granule number that increases |
| 67 | 871 | 804 |
| 81 | 792 | 711 |
| 72 | 912 | 840 |
| Granule number before the wafer sort | Granule number after employing the present invention cleans and dries | The granule number that increases |
| 75 | 297 | 222 |
| 76 | 348 | 272 |
| 69 | 313 | 244 |
In sum; The cleaning drying method of wafer according to the invention and clean drying equipment favours the vertical line direction of said wafer through the fluid direction that said cleaning shower nozzle is set, with in cleaning process; Increase the cleaning dynamics of horizontal direction, thereby improve the cleannes of wafer; Simultaneously, clean shower nozzle and when the ejection cleaning fluid, move horizontally, make the more even distribution of cleaning fluid, avoid on the wafer the residual cleaning fluid of same position residual too much, and avoid that the wafer circle centre position has liquid residue because the centrifugal force of circle centre position is minimum when causing drying.
In addition, clean shower nozzle and after departing from wafer center of circle certain distance, begin to spray cleaning fluid, further reduced the possibility of wafer circle centre position liquid residue, can greatly improve the wafer cleaner degree, reduce the residue problem of liquid impurity and granule foreign; Simultaneously, the improvement of cleaning drying equipment is simple, with low cost, in the performance, yield rate and the reliability that improve product wafer, has practiced thrift the technology cost.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (16)
1. cleaning drying method that can improve the wafer cleaner degree comprises:
One rinsing table is provided, wafer level is positioned on the said rinsing table;
With cleaning the top, the center of circle that shower nozzle is arranged at said wafer, the fluid direction of said cleaning shower nozzle favours the vertical line direction of said wafer;
Wafer starts horizontal rotation, and said cleaning shower nozzle startup moves horizontally;
The beginning cleaning process, said cleaning shower nozzle ejection cleaning fluid is to crystal column surface, and said cleaning shower nozzle is moved horizontally to the position of departing from the said wafer center of circle to be stopped;
Finish to clean, said cleaning shower nozzle stop supplies cleaning fluid, said wafer continues horizontal rotation, to dry said wafer.
2. the cleaning drying method that can improve the wafer cleaner degree as claimed in claim 1 is characterized in that, said cleaning shower nozzle promptly begins to spray cleaning fluid from being positioned at top, the wafer center of circle.
3. the cleaning drying method that can improve the wafer cleaner degree as claimed in claim 1 is characterized in that, said cleaning shower nozzle begins to spray cleaning fluid after moving to and departing from the said wafer center of circle.
4. the cleaning drying method that can improve the wafer cleaner degree as claimed in claim 3 is characterized in that, said cleaning shower nozzle begins to spray cleaning fluid after moving to and departing from the said wafer center of circle 3～5mm.
5. the cleaning drying method that can improve the wafer cleaner degree as claimed in claim 1 is characterized in that, the angle of the fluid direction of said cleaning shower nozzle and the vertical line direction of said wafer is 3～10 °.
6. the cleaning drying method that can improve the wafer cleaner degree as claimed in claim 1 is characterized in that, in cleaning process, the position that said cleaning shower nozzle is moved horizontally to the 5～25mm that departs from the said wafer center of circle stops.
7. the cleaning drying method that can improve the wafer cleaner degree as claimed in claim 6 is characterized in that said cleaning shower nozzle is at the uniform velocity mobile, and translational speed is 5～25mm/min.
8. like any described cleaning drying method that can improve the wafer cleaner degree in the claim 1 to 7, it is characterized in that the rotating speed of said wafer is 1000～2000 rev/mins.
9. like any described cleaning drying method that can improve the wafer cleaner degree in the claim 1 to 7, it is characterized in that said cleaning fluid is deionized water or chemical cleaning solution.
10. the cleaning that can improve the wafer cleaner degree dries equipment, comprising:
Rinsing table, wafer level are positioned on the said rinsing table;
Clean shower nozzle, said cleaning shower nozzle is positioned at said wafer top and can moves horizontally, and the fluid direction of said cleaning shower nozzle favours the vertical line direction of said wafer.
11. the cleaning that can improve the wafer cleaner degree as claimed in claim 10 dries equipment, it is characterized in that the angle of the fluid direction of said cleaning shower nozzle and the vertical line direction of said wafer is 3～10 °.
12. the cleaning that can improve the wafer cleaner degree as claimed in claim 10 dries equipment, it is characterized in that said cleaning shower nozzle can move to the position of the 5～25mm that departs from the said wafer center of circle from said wafer center of circle upper horizontal.
13. the cleaning that can improve the wafer cleaner degree as claimed in claim 10 dries equipment, it is characterized in that, said cleaning dries equipment and also comprises the feed flow pipeline, and an end of said feed flow pipeline links to each other with outside liquid feed device, and the other end links to each other with said cleaning shower nozzle.
14. the cleaning that can improve the wafer cleaner degree as claimed in claim 13 dries equipment, it is characterized in that said cleaning shower nozzle is fixedly connected with said feed flow pipeline, the fluid direction of said cleaning shower nozzle is through regulating the control of feed flow pipeline.
15. the cleaning that can improve the wafer cleaner degree as claimed in claim 13 dries equipment, it is characterized in that said cleaning shower nozzle and said feed flow pipeline flexibly connect, the fluid direction of said cleaning shower nozzle is controlled through regulating the cleaning shower nozzle.
16. dry equipment like any described cleaning that can improve the wafer cleaner degree in the claim 10 to 15, it is characterized in that said cleaning fluid is deionized water or chemical cleaning solution.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100453854A CN102580941A (en) | 2012-02-27 | 2012-02-27 | Cleaning method and cleaning and drying equipment for improving cleanness of wafer |
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| CN2012100453854A CN102580941A (en) | 2012-02-27 | 2012-02-27 | Cleaning method and cleaning and drying equipment for improving cleanness of wafer |
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| CN103028566A (en) * | 2012-12-14 | 2013-04-10 | 北京七星华创电子股份有限公司 | Cleaning machine swinging spraying device and method |
| CN104259146A (en) * | 2014-07-29 | 2015-01-07 | 宁波国创机车装备有限公司 | Cleaning device |
| CN107305845A (en) * | 2016-04-22 | 2017-10-31 | 盛美半导体设备（上海）有限公司 | A kind of non-stress polishing device |
| CN109065475A (en) * | 2018-07-23 | 2018-12-21 | 德淮半导体有限公司 | Wafer cleaning device and its method for cleaning wafer |
| CN112320753A (en) * | 2020-10-29 | 2021-02-05 | 武汉高芯科技有限公司 | MEMS wafer cleaning method |
| CN113394134A (en) * | 2021-05-11 | 2021-09-14 | 桂林芯隆科技有限公司 | Automatic liquid spraying device and method for chip scribing |
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