CN102570994A - Radio frequency power amplifier - Google Patents
Radio frequency power amplifier Download PDFInfo
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- CN102570994A CN102570994A CN2010106081875A CN201010608187A CN102570994A CN 102570994 A CN102570994 A CN 102570994A CN 2010106081875 A CN2010106081875 A CN 2010106081875A CN 201010608187 A CN201010608187 A CN 201010608187A CN 102570994 A CN102570994 A CN 102570994A
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- 239000002184 metal Substances 0.000 claims description 11
- 244000188472 Ilex paraguariensis Species 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 15
- 238000010168 coupling process Methods 0.000 abstract description 15
- 238000005859 coupling reaction Methods 0.000 abstract description 15
- 230000001934 delay Effects 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
The invention relates to a radio frequency power amplifier. The radio frequency power amplifier comprises an on-chip transformer, and is characterized in that a primary coil of the on-chip transformer is formed by connecting two coils in parallel and is embedded among three coils of a secondary coil to increase the current capacity of the primary coil, enhance coupling with the secondary coil and improve the coupling efficiency; and for enabling time delays of a signal in the two primary shunt coils of the primary coil to be the same, the two primary shunt coils are crossly connected, namely the two shunt coils of the primary coil are respectively divided into two parts, and half of an inner coil is connected with half of an outer coil. According to the radio frequency power amplifier, the current of the transformer can be increased, and the required area of the transformer can be reduced, so that the area of chips is saved, and the problems of large volume, complicated processing process, low coupling efficiency and the like are solved.
Description
Technical field
The present invention relates to a kind of power amplifier, particularly relate to a kind of radio-frequency power amplifier, belong to communication technical field with new transformer device structure form.
Background technology
Along with the evolution of modern wireless telecommunications to the high-speed high capacity direction, the user improves constantly the requirement of broadband communications, and follow-on technology is also more and more harsher to the performance of radio frequency and microwave power amplifier.
For the power amplifier chip application in the mobile phone; Its maximum supply power voltage is no more than 4.2V; Its typical supply voltage is 3.3V; And under this situation, export as if the power that 3W will be arranged, under the situation of not considering knee-point voltage, its required optimization impedance is about 1.7 Ω; And the impedance requirement of the final output of power amplifier is 50 Ω, therefore needs an impedance transformer network accomplish the optimization impedance to the conversion between the 50 Ω output impedance between the final output of power amplifier outputing to of power discharging transistor.And use the power transmission efficiency of single order LC impedance transformer network and have dedicated bandwidth all can to reduce along with the increase of impedance transformation ratio; That is to say; Under the powerful situation of output, the power transmission efficiency of single order LC impedance transformer network and have the dedicated bandwidth can be very low.Use second order LC network can slow down the problems referred to above, but can increase the complexity of the outer debugging of sheet greatly.
Can adopt the form of on-chip transformer to accomplish impedance conversion at output at present; In the power transmission efficiency that solves impedance conversion comparison impedance transformer network under high power output situation and when the dedicated bandwidth influence is arranged, can be so that the integrated level of radio-frequency power amplifier chip be high, the outer matching and debugging of sheet is simple.But it is the on-chip transformer that coupling efficiency is high, bandwidth is big, loss is little of 1:n that this mode needs a kind of turn ratio, and wherein n is an impedance transformation ratio.
For traditional turn ratio is the transformer form of 1:n, when the secondary coil number of turn>2 the time, secondary coil will produce from coupling inevitably, thus can reduce the coupling efficiency of transformer, make the Insertion Loss of final transformer increase.
In view of there are problems such as volume is big, processing technology is complicated, coupling efficiency is not high in the on-chip transformer that has radio-frequency power amplifier now.The applicant notices that the technical scheme that does not also address the above problem at present occurs.
Summary of the invention
The object of the invention just is to overcome the above-mentioned deficiency that prior art exists, and a kind of transformer form of improving radio-frequency power amplifier is provided, and makes it to have the coupling efficiency height, bandwidth is big, the radio-frequency power amplifier of the little characteristics of loss.
The technical solution that the present invention provides is: this radio-frequency power amplifier; Include on-chip transformer; The primary coil that is characterized in on-chip transformer is formed in parallel by two coil fingers, is embedded between three coils of secondary coil, can strengthen the electric current ability to bear of primary coil like this; The more important thing is the coupling that has increased with secondary coil, improve coupling efficiency.
In order better to realize the object of the invention; Make the time delay of signal in two elementary bridging coils identical; Make two coil cross coupled in the design, two bridging coils of said on-chip transformer primary coil are divided into two parts respectively, and half of the half the and exterior loop of interior loop combines; Like this, just can obtain the parallelly connected primary coil of two identical time delays.
In order better to realize the object of the invention; Consider the complexity of overall area and cabling; Directly grounding through hole is built in coil inside; The earth terminal of primary coil and secondary coil is directly linked the grounding through hole of coil inside, when saving area, also reduced the dead resistance of cabling.
In order better to realize the object of the invention; The needed via hole in the cabling of double layer of metal up and down junction of said on-chip transformer primary coil input is the MIM electric capacity that constitutes of double layer of metal up and down; This electric capacity is coupling capacitance in circuit; Isolated direct current can not only can be saved area like this, and can reduce the parasitic factor of the via hole of double layer of metal cabling junction up and down.
Equally, the output of said on-chip transformer secondary coil matees needed electric capacity can replace via hole, accomplishes the junction of double layer of metal cabling up and down.
The present invention compared with prior art, its beneficial effect is: solve problems such as existing radio-frequency power amplifier volume is big, processing technology is complicated, coupling efficiency is not high.This radio-frequency power amplifier can improve the electric current that transformer itself is born, and reduces the needed area of transformer, thereby saves area of chip.
Description of drawings
Fig. 1 is the overall plan of the transformer of the embodiment of the invention.
Fig. 2 is the simulation result of insertion loss of the transformer of the embodiment of the invention.
Embodiment
In embodiments of the present invention, a kind of implementation that is applied to the on-chip transformer in the radio-frequency power amplifier is provided, this scheme is mainly accomplished the output impedance conversion of power amplifier.
Need to prove that under the situation of not conflicting, embodiment and the characteristic among the embodiment among the application can make up each other.Below with reference to accompanying drawing and combine embodiment to specify the present invention.
This scheme is mainly used in the front end transmitter in the wireless communication system, and the signal that auxiliary radio-frequency power amplifier will pass through after the up-conversion amplifies undistortedly, sends antenna to and launches.
As shown in Figure 1, the on-chip transformer scheme of the embodiment of the invention is made up of primary coil and secondary coil.Wherein primary coil is made up of with coil finger 102 the coil finger 101 of two parallel connections; Be embedded between three coils 103 of secondary coil; Can strengthen the electric current ability to bear of primary coil like this, the more important thing is the coupling that has increased with secondary coil, improve coupling efficiency.
In order to make signal time delay in the coil of two parallel connections of primary coil identical; Make two coil cross coupled in the design; That is, the coil of two parallel connections is divided into two parts respectively, half of the half the and exterior loop of interior loop combines; Like this, just can obtain the parallelly connected primary coil of two identical time delays.
Consider the complexity of overall area and cabling, directly grounding through hole is built in coil inside, the earth terminal of primary coil and secondary coil is directly linked the grounding through hole of coil inside, when saving area, also reduced the dead resistance of cabling.
The needed via hole place, the cabling of double layer of metal up and down junction 104 of transformer input uses up and down, and the MIM electric capacity of double layer of metal formation replaces; This electric capacity is coupling capacitance in circuit; Isolated direct current; Can not only can save area like this, and the parasitic factor that the via hole of double layer of metal cabling junction brings about can having reduced.
Equally, also can place output in the position 105 of the cabling of the double layer of metal up and down via hole of transformer secondary output coil finger and mate needed electric capacity.
Fig. 2 is the electromagnetic-field simulation result of insertion loss of the transformer of the embodiment of the invention, can find out in the frequency band range of 2～3GHz, the loss of transformer in 1.4dB, minimum reaching about 1dB.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. a radio-frequency power amplifier includes on-chip transformer, it is characterized in that the primary coil of on-chip transformer is made up of the parallel connection of two coil fingers, is embedded between three coils of secondary coil.
2. radio-frequency power amplifier according to claim 1 is characterized in that the coil cross coupled of two parallel connections of on-chip transformer primary coil, and promptly the coil of two parallel connections is divided into two parts respectively, and half of the half the and exterior loop of interior loop combines.
3. radio-frequency power amplifier according to claim 1 is characterized in that grounding through hole is built in coil inside, the earth terminal of primary coil and secondary coil is directly linked the grounding through hole of coil inside.
4. radio-frequency power amplifier according to claim 1, the needed via hole in the cabling of double layer of metal up and down junction that it is characterized in that the input of the on-chip transformer primary coil MIM electric capacity that double layer of metal up and down constitutes of serving as reasons.
5. radio-frequency power amplifier according to claim 1 is characterized in that the needed via hole in the cabling of double layer of metal up and down junction of the output of on-chip transformer secondary coil matees needed electric capacity for the secondary coil output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106081875A CN102570994A (en) | 2010-12-28 | 2010-12-28 | Radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106081875A CN102570994A (en) | 2010-12-28 | 2010-12-28 | Radio frequency power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102570994A true CN102570994A (en) | 2012-07-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106081875A Pending CN102570994A (en) | 2010-12-28 | 2010-12-28 | Radio frequency power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102570994A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104767021A (en) * | 2015-05-04 | 2015-07-08 | 中国电子科技集团公司第五十四研究所 | Broadband high-balance on-chip transformer Balun |
| CN117375654A (en) * | 2021-06-30 | 2024-01-09 | 锐石创芯(深圳)科技股份有限公司 | RF front-end module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1771603A (en) * | 2003-04-09 | 2006-05-10 | 杰斯半导体公司纽波特工厂 | High-density composite metal-insulator-metal capacitors with reduced voltage dependence in semiconductor chips |
| CN1979704A (en) * | 2005-12-09 | 2007-06-13 | 胜美达电机（香港）有限公司 | Transformer and manufacturing method thereof |
| US20100026389A1 (en) * | 2008-08-01 | 2010-02-04 | James Breslin | Dual mode power amplifier output network |
| CN101741326A (en) * | 2008-11-13 | 2010-06-16 | 株式会社瑞萨科技 | Rf power amplifier |
-
2010
- 2010-12-28 CN CN2010106081875A patent/CN102570994A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1771603A (en) * | 2003-04-09 | 2006-05-10 | 杰斯半导体公司纽波特工厂 | High-density composite metal-insulator-metal capacitors with reduced voltage dependence in semiconductor chips |
| CN1979704A (en) * | 2005-12-09 | 2007-06-13 | 胜美达电机（香港）有限公司 | Transformer and manufacturing method thereof |
| US20100026389A1 (en) * | 2008-08-01 | 2010-02-04 | James Breslin | Dual mode power amplifier output network |
| CN101741326A (en) * | 2008-11-13 | 2010-06-16 | 株式会社瑞萨科技 | Rf power amplifier |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104767021A (en) * | 2015-05-04 | 2015-07-08 | 中国电子科技集团公司第五十四研究所 | Broadband high-balance on-chip transformer Balun |
| CN117375654A (en) * | 2021-06-30 | 2024-01-09 | 锐石创芯(深圳)科技股份有限公司 | RF front-end module |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120711 |