CN102569427A - Voltage control variable capacitor and preparation method thereof - Google Patents
Voltage control variable capacitor and preparation method thereof Download PDFInfo
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- CN102569427A CN102569427A CN2010105984028A CN201010598402A CN102569427A CN 102569427 A CN102569427 A CN 102569427A CN 2010105984028 A CN2010105984028 A CN 2010105984028A CN 201010598402 A CN201010598402 A CN 201010598402A CN 102569427 A CN102569427 A CN 102569427A
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- implanted region
- ion implanted
- epitaxial loayer
- voltage control
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000003990 capacitor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 230000037237 body shape Effects 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- -1 add bias voltage Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The invention discloses a voltage control variable capacitor, wherein a PN junction in the voltage control variable capacitor includes a pectinate P-type conducting layer and an N-type conducting layer that are mutually sleeved. The designed pectinate PN junction enables the junction area to be enlarged, and the adjustable range of the capacitance value to be widened at the same time. The invention further discloses a preparation method of the voltage control variable capacitor.
Description
Technical field
The present invention relates to a kind of voltage control variodenser.
Background technology
Phase-locked loop has in analog circuit and radio circuit extremely widely to be used, and voltage control variodenser is a Primary Component in the phase-locked loop.The capacitance adjustable extent of voltage control variodenser plays fundamental influence to the performance of phase-locked loop.
Existing voltage control variodenser mainly contains two kinds of structures: a kind of is to adopt mos capacitance; Wherein Semiconductor substrate S (for example silicon) is through light dope; Between metal or polysilicon gate and substrate, add bias voltage, substrate forms depletion layer, thereby the voltage-regulation depletion widths is regulated the capacitance of variodenser; Another kind is the PN junction structure, regulates the capacitance that the width of tying depletion region is regulated variodenser through its reverse biased.The capacity valve regulating range of these two kinds of variodensers can both improve through changing structure.
Summary of the invention
The technical problem that the present invention will solve provides a kind of voltage control variodenser, and it has bigger capacity valve regulating range.
For solving the problems of the technologies described above, of the present invention a kind of voltage control variodenser is provided, PN junction wherein is made up of the P-type conduction layer and the N type conductive layer of mutually nested pectination.
The present invention also provides a kind of preparation method of voltage control variodenser, comprises the steps:
(1) at the substrate growing epitaxial layers, the conduction type of said epitaxial loayer is identical with the conduction type of said substrate, and the doping content of said epitaxial loayer is less than the doping content of said substrate;
(2) adopt photoetching process to define the position of broach, ion injects the ion implanted region that forms the broach shape for the first time afterwards, removes the residue photoresist afterwards, and the conduction type of said ion implanted region is opposite with said epitaxial loayer;
(3) carry out the ion injection second time; Form the ion implanted region of comb back of the body shape on the surface of epitaxial loayer; Form a conduction region of PN junction with the ion implanted region of said broach shape, the dopant dose that the said second time, ion injected is identical with impurity and the said ion injection first time;
(4) said ion implanted region is drawn through the metal connection and is formed an electrode, and said substrate back depositing metal forms another electrode.
In the voltage control variodenser of the present invention, the pectinate texture that is designed makes the junction area of PN junction become big, and depletion region broadens when adding reverse biased, and the adjustable range that reaches capacitance becomes big beneficial effect.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1 is the sketch map of ion injection for the first time in the method for the present invention;
Fig. 2 is the structural representation after ion injects for the first time in the method for the present invention;
Fig. 3 is the sketch map of ion injection for the second time in the method for the present invention;
Fig. 4 is the structural representation after ion injects for the second time in the method for the present invention;
Fig. 5 is a voltage control variodenser structural representation of the present invention;
Fig. 6 is a method flow diagram of the present invention.
Embodiment
Voltage control variodenser of the present invention, PN junction wherein are designed to be made up of the P-type conduction layer of mutually nested pectination and N type conductive layer.In the concrete instance, PN junction is arranged in the epitaxial loayer of substrate, and the conduction type of this epitaxial loayer and substrate is identical, and the doping content of epitaxial loayer is less than the doping content of substrate; Be distributed with the ion implanted region that is pectination on the epitaxial loayer, the conduction type and the epitaxial loayer of this ion implanted region are opposite, and epitaxial loayer and ion implanted region form the PN junction (see figure 5).
In the said structure, the doping content of substrate is 10
14-10
16Individual atom/cm
2, the doping content of epitaxial loayer is 10
12-10
14Individual atom/cm
2, the doping content of ion implanted region is: 10
12-10
14Individual atom/cm
2The width of the broach of ion implanted region is the 0.1-50 micron, and the degree of depth is the 0.1-5 micron, and the thickness of the comb back of the body is the 0.1-5 micron.
The preparation method of voltage control variodenser of the present invention comprises the steps (see figure 6):
(1) at the substrate growing epitaxial layers.Epitaxial loayer adopts chemical vapor deposition method to generate usually.Also can adopt present industry other technologies commonly used.The conduction type of epitaxial loayer is identical with the conduction type of substrate, and the doping content of epitaxial loayer is less than the doping content of substrate.
(2) adopt photoetching process to define the position of broach, ion injects the ion implanted region that forms the broach shape for the first time afterwards, removes residue photoresist (seeing Fig. 1 and Fig. 2) afterwards; This secondary ion injects and adopts low dosage, and high-energy injects.The conduction type and the epitaxial loayer of ion implanted region are opposite.Generally also can carry out annealing in process after injecting and activate the ion that is injected.The width that forms the ion implanted region of broach shape is the 0.1-50 micron, and the degree of depth is the 0.1-5 micron.
(3) carry out the ion injection second time; Form the ion implanted region (seeing Fig. 3 and Fig. 4) of comb back of the body shape on the surface of epitaxial loayer; This injection region forms a knot of PN junction with the ion implanted region of broach shape; The dopant dose that injects of ion and impurity and ion injection for the first time for the second time identical just injected the energy difference, thus in epitaxial loayer the ion implanted region of formation pectination;
(4) ion implanted region is drawn electrode of formation through the metal connection, the substrate back depositing metal forms another electrode.
The preparation of electrode specifically can be:
1) at film between illuvium on the ion implanted region, then film forms the contact hole of ion implanted region between etch layer;
2) depositing metal filling contact hole and form metal wire is as an electrode of voltage control variodenser;
3) another electrode of depositing metal formation voltage control variodenser at the back side of substrate.
Among the above-mentioned preparation method, the doping content of substrate can be 10
14-10
16Individual atom/cm
2, the doping content of epitaxial loayer is 10
12-10
14Individual atom/cm
2, the doping content of ion implanted region is: 10
12-10
14Individual atom/cm
2In the ion implanted region, the width of broach is the 0.1-50 micron, and the degree of depth is the 0.1-5 micron, and the thickness of the comb back of the body is the 0.1-5 micron.
Claims (8)
1. voltage control variodenser, it is characterized in that: the PN junction in the said voltage control variodenser is made up of the P-type conduction layer and the N type conductive layer of mutually nested pectination.
2. voltage control variodenser as claimed in claim 1 is characterized in that: said PN junction is arranged in the epitaxial loayer of substrate, and the conduction type of said epitaxial loayer and said substrate is identical, and the doping content of said epitaxial loayer is less than the doping content of said substrate; Have on the said epitaxial loayer to be the ion implanted region that pectination distributes, the conduction type of said ion implanted region is opposite with said epitaxial loayer, and said epitaxial loayer and said ion implanted region form said PN junction.
3. voltage control variodenser as claimed in claim 2 is characterized in that: the doping content of said substrate is 10
14-10
16Individual atom/cm
2, the doping content of said epitaxial loayer is 10
12-10
14Individual atom/cm
2, the doping content of said ion implanted region is: 10
12-10
14Individual atom/cm
2
4. voltage control variodenser as claimed in claim 2 is characterized in that: the width of broach is the 0.1-50 micron in the said ion implanted region, and the degree of depth is the 0.1-5 micron, and the thickness of the said comb back of the body is the 0.1-5 micron.
5. the preparation method of a voltage control variodenser is characterized in that, comprises the steps:
(1) at the substrate growing epitaxial layers, the conduction type of wherein said epitaxial loayer is identical with the conduction type of said substrate, and the doping content of said epitaxial loayer is less than the doping content of said substrate;
(2) adopt photoetching process to define the position of broach, ion injects the ion implanted region that forms the broach shape for the first time afterwards, removes the residue photoresist afterwards, and the conduction type of said ion implanted region is opposite with said epitaxial loayer;
(3) carry out the ion injection second time; Form the ion implanted region of comb back of the body shape on the surface of said epitaxial loayer; Form a conduction region of PN junction with the ion implanted region of said broach shape, the dopant dose that the said second time, ion injected is identical with impurity and the said ion injection first time;
(4) said ion implanted region is drawn through the metal connection and is formed an electrode, and said substrate back depositing metal forms another electrode.
6. preparation method as claimed in claim 5 is characterized in that: said step (4) specifically can be:
1) at film between illuvium on the said ion implanted region, then the said interlayer film of etching forms the contact hole of said ion implanted region;
2) depositing metal is filled said contact hole and is formed metal wire, as an electrode of said voltage control variodenser;
3) depositing metal forms another electrode of said voltage control variodenser at the back side of said substrate.
7. like claim 5 or 6 described preparation methods, it is characterized in that: the doping content of said substrate is 10
14-10
16Individual atom/cm
2, the doping content of said epitaxial loayer is 10
12-10
14Individual atom/cm
2, the doping content of said ion implanted region is: 10
12-10
14Individual atom/cm
2
8. like claim 5 or 6 described preparation methods, it is characterized in that: the width of broach is the 0.1-50 micron in the said ion implanted region, and the degree of depth is the 0.1-5 micron, and the thickness of the said comb back of the body is the 0.1-5 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105984028A CN102569427A (en) | 2010-12-21 | 2010-12-21 | Voltage control variable capacitor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105984028A CN102569427A (en) | 2010-12-21 | 2010-12-21 | Voltage control variable capacitor and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102569427A true CN102569427A (en) | 2012-07-11 |
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| CN2010105984028A Pending CN102569427A (en) | 2010-12-21 | 2010-12-21 | Voltage control variable capacitor and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878543A (en) * | 2018-06-29 | 2018-11-23 | 上海华虹宏力半导体制造有限公司 | capacitor and its manufacturing method |
| CN117199145A (en) * | 2023-09-18 | 2023-12-08 | 扬州国宇电子有限公司 | High-capacitance-ratio super-abrupt variable-capacitance diode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1076550A (en) * | 1992-01-09 | 1993-09-22 | 国际商业机器公司 | Double-gate substrate danamic RAM cell array |
| US20030207536A1 (en) * | 1999-01-11 | 2003-11-06 | Fuji Electric, Co., Ltd. | Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
| CN1707809A (en) * | 2004-06-08 | 2005-12-14 | Nec化合物半导体器件株式会社 | Semiconductor device |
| US20070126256A1 (en) * | 2005-12-02 | 2007-06-07 | Khamkong Yattavong | Automobile sun visor and attachment for use with an automobile sun visor |
-
2010
- 2010-12-21 CN CN2010105984028A patent/CN102569427A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1076550A (en) * | 1992-01-09 | 1993-09-22 | 国际商业机器公司 | Double-gate substrate danamic RAM cell array |
| US20030207536A1 (en) * | 1999-01-11 | 2003-11-06 | Fuji Electric, Co., Ltd. | Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
| CN1707809A (en) * | 2004-06-08 | 2005-12-14 | Nec化合物半导体器件株式会社 | Semiconductor device |
| US20070126256A1 (en) * | 2005-12-02 | 2007-06-07 | Khamkong Yattavong | Automobile sun visor and attachment for use with an automobile sun visor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878543A (en) * | 2018-06-29 | 2018-11-23 | 上海华虹宏力半导体制造有限公司 | capacitor and its manufacturing method |
| CN117199145A (en) * | 2023-09-18 | 2023-12-08 | 扬州国宇电子有限公司 | High-capacitance-ratio super-abrupt variable-capacitance diode and preparation method thereof |
| CN117199145B (en) * | 2023-09-18 | 2024-05-07 | 扬州国宇电子有限公司 | High-capacitance-ratio super-abrupt variable-capacitance diode and preparation method thereof |
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Application publication date: 20120711 |