CN102554784A - Method for manufacturing fine polishing cushion and chemical mechanical polishing method - Google Patents
Method for manufacturing fine polishing cushion and chemical mechanical polishing method Download PDFInfo
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- CN102554784A CN102554784A CN201210030421XA CN201210030421A CN102554784A CN 102554784 A CN102554784 A CN 102554784A CN 201210030421X A CN201210030421X A CN 201210030421XA CN 201210030421 A CN201210030421 A CN 201210030421A CN 102554784 A CN102554784 A CN 102554784A
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- fine lapping
- polishing
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a method for manufacturing a fine polishing cushion and a chemical mechanical polishing method. In the method for manufacturing the fine polishing cushion by means of fixing a cutting direction, the fine polishing cushion is U-shaped, and a fine polishing cushion trimming component realizes trimming on the U-shaped fine-polishing cushion only along a fixed trimming direction. The method includes fixing the cutting direction of the U-shaped fine polishing cushion during fine polishing cushion manufacturing process; and accordingly ensuring that small squares on the fine polishing cushion are narrow in the trimming direction. More grooves can be trimmed when a trimmer is used for trimming due to small dimensions in the trimming direction, accordingly, byproducts generated during polishing can be accumulated in the grooves, naturally, a byproduct cleaning effect is obvious as the quantity of grooves trimmed by the trimmer is high, and consequent polishing flatness is good. Accordingly, by the aid of the method for manufacturing the fine polishing cushion and the chemical mechanical polishing method, the quality of the fine polishing cushion can be effectively controlled, and uniformity of a chip is improved after the chip is polished on the fine-polishing cushion.
Description
Technical field
The present invention relates to field of semiconductor manufacture; Relate in particular to cmp (CMP) technology, make the method for high-quality fine lapping pad and adopted this to make the chemical and mechanical grinding method of the method for high-quality fine lapping pad through fixing cut direction through fixing cut direction more specifically to a kind of.
Background technology
In chemical mechanical milling tech; The dressing tool of cmp fine grinding pad (for example Nylon Brush) is used to remove the impurity material on the grinding pad; And keep grinding pad surface cleaning (fresh), thereby keep removal speed and the flatness of grinding rate of silicon chip surface film in process of lapping.
Fig. 1 schematically shows the structure of chemical-mechanical grinding device.As shown in Figure 1, chemical-mechanical grinding device comprises: grinding pad 1 (specifically for example being the cushion of high-molecular porous material), be carved with groove above, and be convenient to the distribution of lapping liquid, during grinding, the pressurization of the silicon chip back side, positive contact grinding pad grinds; Main mill pad finishing member 2, it mainly is made up of trimmer, behind the intact a slice silicon chip of every grinding, is used for grinding pad is cleared up finishing process; And grinding head 3, it is mainly used in fixedly silicon chip, and is exerted pressure in the silicon chip back side.
In the process that chemical-mechanical grinding device grinds silicon chip,, grinding agent 4 on grinding pad, plays lubrication through pipeline stream in process of lapping, and grinding agent 4 also can play suitable chemical reaction with the silicon chip that is ground, raising grinding removal speed.
And grinding pad 1 comprises main pad 11, and main pad 11 mainly is the grinding as tungsten (W).In addition, chemical-mechanical grinding device also comprises fine lapping pad (buffer pad) 12, and fine lapping pad 12 is to be independent of one of grinding pad 1 independently system, mainly is to have ground fine lapping afterwards as tungsten, mainly is that silica is carried out fine grinding.Generally, the fine lapping spacer has circular and two kinds of shapes of watt shape.
Chemical-mechanical grinding device generally has the circular fine lapping pad (as shown in Figure 1) that the groove on it intersects anyhow, still, has some chemical-mechanical grinding devices (for example Ebara instrument) to have the U type fine lapping pad (as shown in Figure 2) that the groove on it intersects anyhow.The higher problem of grinding rate flatness can take place since bring into use in this U type fine lapping pad once in a while.
Therefore, hope can provide a kind of method of improving the grinding flatness of chemical-mechanical grinding device.
Summary of the invention
Technical problem to be solved by this invention is to having above-mentioned defective in the prior art, a kind of method of the grinding flatness of improving chemical-mechanical grinding device is provided and adopted this through in the manufacture process of fine lapping pad fixedly cut direction make the chemical and mechanical grinding method of the method for high-quality fine lapping pad.
According to a first aspect of the invention; A kind of method of making high-quality fine lapping pad through fixing cut direction is provided; It comprises: to the fine lapping pad is the fine lapping pad that U type fine lapping pad and fine grinding pad finishing member are only repaired on said U type fine lapping pad along fixing finishing direction; In the manufacture process of fine lapping pad, the shear direction of fixing said U type fine lapping pad, narrower to guarantee the width of lattice on the finishing direction on the fine grinding pad.
Has the groove that intersects anyhow on the said U type fine lapping pad.
According to the present invention, the size of finishing direction means for a short time when trimmer is repaired can be trimmed to more groove; Like this, because the accessory substance that produces in grinding all can be deposited in the groove, the groove that trimmer is trimmed to is many, naturally just can be more obvious to the accessory substance cleaning effect, and follow-up grinding flatness will be got well.Therefore,, can control fine lapping pad quality effectively, improve the uniformity of the chip after grinding on the fine lapping pad through said method.
According to a second aspect of the invention, a kind of chemical and mechanical grinding method that fixing cut direction is made the method for high-quality fine lapping pad that passes through that has adopted according to a first aspect of the invention is provided.
Owing to adopted according to the described method of making high-quality fine lapping pad through fixing cut direction of first aspect present invention; Therefore; It will be appreciated by persons skilled in the art that according to the chemical and mechanical grinding method of second aspect present invention and can realize that equally the fixing cut direction passed through according to a first aspect of the invention makes the useful technique effect that the method for high-quality fine lapping pad can realize.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the structure of chemical-mechanical grinding device.
Fig. 2 schematically shows the operation of the U type fine lapping pad of chemical-mechanical grinding device.
Fig. 3 and Fig. 4 schematically show the method that fixing cut direction is made high-quality fine lapping pad of passing through according to the embodiment of the invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
The specific embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
Fig. 2 schematically shows the operation of the U type fine lapping pad of chemical-mechanical grinding device.
As shown in Figure 2, fine lapping pad 12 is a U type fine lapping pad, and the groove on it intersects on orthogonal X and Y direction anyhow; Fine grinding pad finishing member 13 is repaired on fine lapping pad 12 along the grinding direction shown in the arrow (specifically being directions X).
Fig. 3 shows the part of fine lapping pad 12 and amplifies diagrammatic sketch, has wherein specifically illustrated the groove width signal of the part on the fine lapping pad.
The cut direction of passing through fixedly according to the embodiment of the invention is made in the method for high-quality fine lapping pad, and in the manufacture process of fine lapping pad, fixedly the shear direction of fine lapping pad 12 is narrower to guarantee the width of lattice on the finishing direction on the fine grinding pad.
Specifically, in the manufacture process of fine grinding pad, the lattice that top groove surrounds is generally rectangle (comprising square); And fine grinding pad finishing member 13 is only repaired along directions X; Therefore the size of these lattices on X and Y direction will influence the finishing effect of fine grinding pad finishing member 13.As shown in Figure 3, the size of directions X means for a short time when trimmer is repaired can be trimmed to more groove.
Furtherly, the A among Fig. 4, B show the different situations of the groove width of the part on the fine lapping pad.As shown in Figure 4, the width of the blockage on the directions X, the weak point of the ratio A of B, thus on the fine lapping pad of same width with regard to the quantity of groove, B is more than A.
And, since on the fine lapping pad of same width with regard to the quantity of groove, B is more than A, can be trimmed to more groove so the size of directions X means for a short time when trimmer is repaired; Like this, because the accessory substance that produces in grinding all can be deposited in the groove, the groove that trimmer is trimmed to is many, naturally just can be more obvious to the accessory substance cleaning effect, and follow-up grinding flatness will be got well.
Therefore,, can control fine lapping pad quality effectively, improve the uniformity of the chip after grinding on the fine lapping pad through said method.
According to another embodiment of the present invention, the present invention also provides a kind of chemical and mechanical grinding method of making the method for high-quality fine lapping pad through fixing cut direction according to the above embodiment of the present invention that adopted.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (3)
1. make the method for fine lapping pad through fixing cut direction for one kind, said fine lapping pad is a U-shaped fine lapping pad, and fine grinding pad finishing member is only repaired on said U type fine lapping pad along fixing finishing direction, it is characterized in that said method comprises:
In the manufacture process of fine lapping pad, the shear direction of fixing said U type fine lapping pad, narrower to guarantee the width of lattice on the finishing direction on the fine lapping pad.
2. according to claim 1ly make the method for fine lapping pad, it is characterized in that having the groove that intersects anyhow on the said U type fine lapping pad through fixing cut direction.
3. chemical and mechanical grinding method is characterized in that adopting the method for making the fine lapping pad through fixing cut direction according to claim 1 and 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210030421XA CN102554784A (en) | 2012-02-10 | 2012-02-10 | Method for manufacturing fine polishing cushion and chemical mechanical polishing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210030421XA CN102554784A (en) | 2012-02-10 | 2012-02-10 | Method for manufacturing fine polishing cushion and chemical mechanical polishing method |
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| CN102554784A true CN102554784A (en) | 2012-07-11 |
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| CN201210030421XA Pending CN102554784A (en) | 2012-02-10 | 2012-02-10 | Method for manufacturing fine polishing cushion and chemical mechanical polishing method |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1647255A (en) * | 2002-04-03 | 2005-07-27 | 东邦工程株式会社 | Polishing pad and semiconductor substrate manufacturing method using the polishing pad |
| CN1958236A (en) * | 2005-11-03 | 2007-05-09 | 上海华虹Nec电子有限公司 | Method for processing grooves of grinding pads in chemico-mechanical polishing |
| CN1978140A (en) * | 2005-12-08 | 2007-06-13 | 上海华虹Nec电子有限公司 | Method for prolonging service-life of grinding pad in chemical-mechanical polishing |
| CN101024277A (en) * | 2006-02-16 | 2007-08-29 | 罗门哈斯电子材料Cmp控股股份有限公司 | Three-dimensional network for chemical mechanical polishing |
| CN101100048A (en) * | 2006-07-03 | 2008-01-09 | 三芳化学工业股份有限公司 | Grinding pad with surface grains |
| JP2008044100A (en) * | 2006-08-17 | 2008-02-28 | Tobu Denshi Kk | Polishing pad and chemical mechanical polishing device including the same |
| CN101501112A (en) * | 2006-07-28 | 2009-08-05 | 东丽株式会社 | Interpenetrating polymer network structure and polishing pad and processes for producing them |
| CN101623854A (en) * | 2008-07-10 | 2010-01-13 | 贝达先进材料股份有限公司 | Grinding pad with groove structure for preventing grinding surface from falling off |
-
2012
- 2012-02-10 CN CN201210030421XA patent/CN102554784A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1647255A (en) * | 2002-04-03 | 2005-07-27 | 东邦工程株式会社 | Polishing pad and semiconductor substrate manufacturing method using the polishing pad |
| CN1958236A (en) * | 2005-11-03 | 2007-05-09 | 上海华虹Nec电子有限公司 | Method for processing grooves of grinding pads in chemico-mechanical polishing |
| CN1978140A (en) * | 2005-12-08 | 2007-06-13 | 上海华虹Nec电子有限公司 | Method for prolonging service-life of grinding pad in chemical-mechanical polishing |
| CN101024277A (en) * | 2006-02-16 | 2007-08-29 | 罗门哈斯电子材料Cmp控股股份有限公司 | Three-dimensional network for chemical mechanical polishing |
| CN101100048A (en) * | 2006-07-03 | 2008-01-09 | 三芳化学工业股份有限公司 | Grinding pad with surface grains |
| CN101501112A (en) * | 2006-07-28 | 2009-08-05 | 东丽株式会社 | Interpenetrating polymer network structure and polishing pad and processes for producing them |
| JP2008044100A (en) * | 2006-08-17 | 2008-02-28 | Tobu Denshi Kk | Polishing pad and chemical mechanical polishing device including the same |
| CN101623854A (en) * | 2008-07-10 | 2010-01-13 | 贝达先进材料股份有限公司 | Grinding pad with groove structure for preventing grinding surface from falling off |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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Application publication date: 20120711 |