CN102530955A - Tungsten silicide annealing method - Google Patents
Tungsten silicide annealing method Download PDFInfo
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- CN102530955A CN102530955A CN2010106052158A CN201010605215A CN102530955A CN 102530955 A CN102530955 A CN 102530955A CN 2010106052158 A CN2010106052158 A CN 2010106052158A CN 201010605215 A CN201010605215 A CN 201010605215A CN 102530955 A CN102530955 A CN 102530955A
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- annealing
- tungsten silicide
- tungsten
- value
- resistivity
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- 238000000137 annealing Methods 0.000 title claims abstract description 42
- 229910021342 tungsten silicide Inorganic materials 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 27
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 3
- 230000008646 thermal stress Effects 0.000 abstract description 5
- 230000008092 positive effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a tungsten silicide annealing method. The method comprises the steps of annealing, and controlling the boat loading temperature to a temperature lower than 600 DEG C. Compared to the prior art, the tungsten silicide annealing method provided by the invention has the positive effect that the method obviates tungsten silicide film stripping caused by thermal stress so as to radically eliminate the influences of film stripping on a device.
Description
[technical field]
The present invention relates to a kind of two tungsten silicide method for annealing, especially relate to a kind of method for annealing that two tungsten silicide thin films are peeled off of eliminating.
[background technology]
Two tungsten silicide (WSi
2) have HMP, stable preferably because of it; And the characteristics of low-resistivity; Application on the CMOS processing procedure is more and more general; Be mainly used in the ohmic that promotes between metallic aluminium and the silicon touch be used for polysilicon (Polysilicon) together as the conductor material of gate, with the resistivity of reduction gate.
More generally form two tungsten silicides now with the deposit of LPCVD method elder generation; Its x value is about about 2.6～2.8; The resistivity of this moment is also higher, is about 700～900 μ Ω cm, must through once anneal (Anneal) resistivity is reduced to below the 70 μ Ω cm again; At this moment x value is 2.2～2.3, has played the effect that reduces the polysilicon resistance rate.
After forming two tungsten silicides, can repair because of ion implantation and ruined lattice through the annealed pyroprocess in the manufacture of semiconductor, activate and mix, could form device through multiple tracks annealing.Therefore the annealing in later stage is vital to device, can not arbitrarily change the temperature and time of its thermal process.Because annealing need be accomplished at boiler tube, so advance the boat temperature generally more than 700 ℃, it is about 750 ℃ that the standard of general company is advanced the boat temperature.But the thermal stresses that such thermal process produces may cause peel off (peeling) of film again, like the peeling of two tungsten silicides, so that influences device.
[summary of the invention]
To the deficiency of prior art, the technical problem that the present invention solves provides a kind of two tungsten silicide method for annealing that film is peeled off of eliminating.
The object of the invention is realized through following technical scheme is provided:
A kind of two tungsten silicide method for annealing wherein, may further comprise the steps:
Annealing, and control is advanced the boat temperature and is lower than 600 ℃.
Alternatively, before two tungsten silicides are annealed, may further comprise the steps:
Form two tungsten silicides through the deposit of LPCVD method elder generation, its x value is 2.6～2.8;
Annealing for the first time makes x value reduction most 2.2～2.3 to obtain two tungsten silicides.
Alternatively, at 2.6～2.8 o'clock, resistivity was 700～900 μ Ω cm in the x value.
Alternatively, at 2.2～2.3 o'clock, resistivity was less than 70 μ Ω cm in the x value.
Alternatively, said annealing is accomplished in boiler tube.
Compared with prior art, the invention has the beneficial effects as follows: changed two tungsten silicide thin films that thermal stresses brings and peeled off phenomenon, fundamentally eliminated film and peel off the influence that brings to device.
[embodiment]
It below is preferred forms of the present invention.
Annealing is that metal slowly is heated to certain temperature, keeps the enough time, cools off a kind of metal heat treatmet technology of (normally slowly cooling is controlled chilling sometimes) then with Reasonable Speed.
Be that material or workpiece through casting, forging rolling, welding or cut are softened, improve plasticity and toughness, make the chemical ingredients homogenizing, remove unrelieved stress, or the physicals that obtains expecting.Annealing process has multiple with the difference of purpose, like full annealed, isothermal annealing, homogenizing annealing, Spheroidizing Annealing, removal stress annealing, recrystallization annealing, and stabilizing annealing, magnetic-field annealing or the like.
General purpose of returning goods is:
(1) reduces hardness, improve machinability;
(2) eliminate unrelieved stress, stable dimensions reduces distortion and crackle tendency;
(3) crystal grain thinning, the adjustment tissue is eliminated tissue defects.
Aborning, annealing process is used very extensive.Require the annealed purpose different according to workpiece, the annealed technological specification has multiple, and commonly used have Full Annealing, Spheroidizing Annealing and a stress relief annealing etc.
Two tungsten silicide method for annealing of the present invention have reduced the heat budget in annealing process, thereby have eliminated the possibility that thermal stresses causes film to be peeled off.
The present invention may further comprise the steps before two tungsten silicides are annealed:
At first, form two tungsten silicides through the deposit of LPCVD method elder generation, its x value is about about 2.6～2.8, and the resistivity of this moment is also higher, is about 700～900 μ Ω cm;
Secondly through annealing for the first time, resistivity is reduced to below the 70 μ Ω cm, x value at this moment is 2.2～2.3, has played the effect that reduces the polysilicon resistance rate, obtains two tungsten silicides.
At this moment, then can carry out subsequent annealing to two tungsten silicides that two tungsten silicides generate:
Subsequent annealing need be accomplished at boiler tube, advances the boat temperature and generally is being lower than 600 ℃.
Learn through overtesting: same process time and temperature, only change and advance the boat temperature, control is advanced the boat temperature and is lower than 600 ℃, can avoid film to peel off.Overcome and advanced the boat temperature in the prior art and peel off phenomenon at two tungsten silicide thin films that the traditional concept more than 700 ℃ causes.
Through adopting low temperature to advance the mode of boat, change two tungsten silicide thin films that thermal stresses brings and peeled off phenomenon, fundamentally eliminate film and peeled off the influence that brings to device.
Although be the example purpose; Preferred implementation of the present invention is disclosed; But those of ordinary skill in the art will recognize, under the situation that does not break away from disclosed scope of the present invention and spirit by appending claims, various improvement, increase and replacement are possible.
Claims (5)
1. a tungsten silicide method for annealing is characterized in that, may further comprise the steps:
Annealing, and control is advanced the boat temperature and is lower than 600 ℃.
2. two tungsten silicide method for annealing according to claim 1 is characterized in that, to WSi
2Before annealing, may further comprise the steps:
Form two tungsten silicides through the deposit of LPCVD method elder generation, its x value is 2.6～2.8;
Annealing for the first time makes x value reduction most 2.2～2.3 to obtain two tungsten silicides.
3. two tungsten silicide method for annealing according to claim 2 is characterized in that, at 2.6～2.8 o'clock, resistivity was 700～900 μ Ω cm in the x value.
4. two tungsten silicide method for annealing according to claim 2 is characterized in that, at 2.2～2.3 o'clock, resistivity was less than 70 μ Ω cm in the x value.
5. two tungsten silicide method for annealing according to claim 1 is characterized in that said annealing is accomplished in boiler tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106052158A CN102530955A (en) | 2010-12-27 | 2010-12-27 | Tungsten silicide annealing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106052158A CN102530955A (en) | 2010-12-27 | 2010-12-27 | Tungsten silicide annealing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102530955A true CN102530955A (en) | 2012-07-04 |
Family
ID=46339177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106052158A Pending CN102530955A (en) | 2010-12-27 | 2010-12-27 | Tungsten silicide annealing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102530955A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4391846A (en) * | 1979-04-05 | 1983-07-05 | The United States Of America As Represented By The United States Department Of Energy | Method of preparing high-temperature-stable thin-film resistors |
| US5422311A (en) * | 1993-05-03 | 1995-06-06 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a conductor layer in a semiconductor device |
| CN1232294A (en) * | 1998-04-08 | 1999-10-20 | 日本电气株式会社 | Ferroelectric memory device with improved ferroelectric capacity characteristic |
-
2010
- 2010-12-27 CN CN2010106052158A patent/CN102530955A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4391846A (en) * | 1979-04-05 | 1983-07-05 | The United States Of America As Represented By The United States Department Of Energy | Method of preparing high-temperature-stable thin-film resistors |
| US5422311A (en) * | 1993-05-03 | 1995-06-06 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a conductor layer in a semiconductor device |
| CN1232294A (en) * | 1998-04-08 | 1999-10-20 | 日本电气株式会社 | Ferroelectric memory device with improved ferroelectric capacity characteristic |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120704 |