CN102515090B - Pressure sensor and formation method thereof - Google Patents
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- CN102515090B CN102515090B CN201110433740.0A CN201110433740A CN102515090B CN 102515090 B CN102515090 B CN 102515090B CN 201110433740 A CN201110433740 A CN 201110433740A CN 102515090 B CN102515090 B CN 102515090B
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Abstract
The invention relates to a pressure sensor and a formation method thereof. The formation method of the pressure sensor comprises the following steps: 1, providing a semiconductor substrate with a control circuit and an interconnection structure provided therein, forming a bottom electrode on the semiconductor substrate, and allowing the bottom electrode to have an electric connection with the control circuit by the interconnection structure; 2, forming a sacrificial layer, and covering the bottom electrode; 3, forming a top electrode, covering the top surface and side surfaces of the sacrificial layer and partial semiconductor substrate, and arranging first openings on the top electrode, wherein the first openings make the sacrificial layer be exposed; 4, removing the sacrificial layer through the first openings, and forming a cavity between the top electrode and the bottom electrode; and 5, forming a dielectric layer, covering the semiconductor substrate and the top electrode, and arranging annular second openings on the dielectric layer, wherein the second openings isolate partial top electrode opposite to the bottom electrode, and the isolated partial top electrode is used as a pressure sensing zone. The formation method of the pressure sensor according to above technical scheme, which is compatible with CMOS (complementary metal oxide semiconductor) technologies, is simple.
Description
Technical field
The present invention relates to micro electronmechanical field, relate in particular to pressure sensor and forming method thereof.
Background technology
MEMS (Microelectro Mechanical Systems, be called for short MEMS) is the research frontier of the multidisciplinary intersection that grows up on microelectric technique basis, is a kind of technology that adopts semiconductor technology to manufacture micro-electro-mechanical device.Compare with traditional electromechanical device, MEMS device has fairly obvious advantage aspect high temperature resistant, small size, low-power consumption.Development through decades, has become one of great sciemtifec and technical sphere of attracting attention in the world, and it relates to multiple subject and the technology such as electronics, machinery, material, physics, chemistry, biology, medical science, has broad application prospects.
Pressure sensor is a kind of transducer that pressure signal is converted to the signal of telecommunication.According to the difference of operation principle, be divided into piezoresistive pressure sensor and capacitance pressure transducer.The principle of capacitance pressure transducer,, for by the electric capacity between pressure change top electrodes and bottom electrode, is carried out gaging pressure with this.
The manufacture method of the pressure sensor of prior art some and CMOS technique can not be compatible, and the compatibility of some and CMOS technique is low.For example November in 2003 Granted publication on the 5th the notification number Chinese patent disclosed " pressure sensor " that is CN1126948C, its manufacture method can not with CMOS process compatible.
Summary of the invention
The problem that the present invention solves be prior art pressure sensor manufacture method can not with the problem of CMOS process compatible.
For addressing the above problem, the invention provides the method for mineralization pressure sensor, comprising:
Semiconductor base is provided, has control circuit and interconnection structure in described semiconductor base, on described semiconductor base, be formed with bottom electrode, described interconnection structure is electrically connected to described bottom electrode and control circuit;
Form sacrifice layer, cover described bottom electrode;
Form top electrodes, cover the described semiconductor base of end face, side and part of described sacrifice layer, described top electrodes has the first opening, and described the first opening exposes described sacrifice layer;
By described the first opening, remove described sacrifice layer, between described top electrodes and bottom electrode, form cavity;
Form dielectric layer, cover described semiconductor base and top electrodes, described dielectric layer has the second opening in the form of a ring, and described the second opening isolates the part top electrodes relative with described bottom electrode, and the part top electrodes that this isolates is as pressure sensing district.
Optionally, in described semiconductor base, also there is another interconnection structure, be electrically connected to described top electrodes;
Or, in described dielectric layer, forming another interconnection structure, the part that covers semiconductor base at described top electrodes is electrically connected to described top electrodes.
Optionally, the material of described sacrifice layer is amorphous carbon;
The method that forms described sacrifice layer is chemical vapour deposition (CVD);
The method of removing described sacrifice layer is:
Deng ionization oxygen, form oxygen plasma;
Described oxygen plasma is passed into described the first opening, is amorphous carbon described in ashing under the condition of 150 ℃～450 ℃ in temperature range.
Optionally, described control circuit is cmos circuit.
The present invention also provides a kind of pressure sensor, comprising:
Semiconductor base has control circuit and interconnection structure in described semiconductor base, on described semiconductor base, is formed with bottom electrode, and described interconnection structure is electrically connected to described bottom electrode and control circuit;
Top electrodes, comprises roof, diapire and sidewall, and described roof and described bottom electrode are oppositely arranged, and described diapire is positioned on described semiconductor base, and described sidewall connects diapire and roof, is cavity between described top electrodes and bottom electrode;
Dielectric layer, covers described semiconductor base and top electrodes, and described dielectric layer has the second opening in the form of a ring, and described the second opening isolates the roof of the described top electrodes of part, and the part roof that this isolates is as pressure sensing district.
Optionally, in described semiconductor base, also there is another interconnection structure, be electrically connected to described top electrodes;
Or, in described dielectric layer, being formed with another interconnection structure, the part that covers semiconductor base at described top electrodes is electrically connected to described top electrodes.
Optionally, described control circuit is cmos circuit.
Compared with prior art, the present invention has the following advantages:
The method of the mineralization pressure sensor of the technical program, provides semiconductor base, has control circuit and interconnection structure in semiconductor base, and on semiconductor base, has bottom electrode, and interconnection structure is electrically connected to bottom electrode with control circuit; Form sacrifice layer, cover bottom electrode; Afterwards, form the top electrodes with the first opening, cover the described semiconductor base of end face, side and part of sacrifice layer; By the first opening, remove after sacrifice layer, between described top electrodes and bottom electrode, just formed cavity; Finally, can form dielectric layer, cover semiconductor base and top electrodes, and form the second opening in the form of a ring at dielectric layer, the second opening isolates the part top electrodes relative with bottom electrode, and the part top electrodes that this isolates is as pressure sensing district.This formation method forms cavity by means of sacrifice layer between bottom electrode and top electrodes, and with CMOS process compatible, and formation method is simple.
Pressure sensor and the semiconductor base of the technical program integrate, and in semiconductor base, can be formed with circuit structure, so just the relative circuit structure of pressure sensor can be integrated.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of method of the mineralization pressure sensor of the specific embodiment of the invention;
Fig. 2～Fig. 9 is the cross-sectional view of method of the mineralization pressure sensor of the present invention's one specific embodiment;
Figure 10 is the cross-sectional view of the pressure sensor of another specific embodiment of the present invention.
The specific embodiment
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that.Therefore the present invention is not subject to the restriction of the following public specific embodiment.
Fig. 1 is the schematic flow sheet of method of the mineralization pressure sensor of the specific embodiment of the invention, and with reference to figure 1, the method for the mineralization pressure sensor of the specific embodiment of the invention comprises:
Step S11, provides semiconductor base, has control circuit and interconnection structure in described semiconductor base, on described semiconductor base, is formed with bottom electrode, and described interconnection structure is electrically connected to described bottom electrode and control circuit;
Step S12, forms sacrifice layer, covers described bottom electrode;
Step S13, forms top electrodes, covers the described semiconductor base of end face, side and part of described sacrifice layer, and described top electrodes has the first opening, and described the first opening exposes described sacrifice layer;
Step S14, removes described sacrifice layer by described the first opening, between described top electrodes and bottom electrode, forms cavity;
Step S15, form dielectric layer, cover described semiconductor base and top electrodes, described dielectric layer has the second opening in the form of a ring, described the second opening isolates the part top electrodes relative with described bottom electrode, and the part top electrodes that this isolates is as pressure sensing district.
Fig. 2～Fig. 9 is the cross-sectional view of method of the mineralization pressure sensor of the specific embodiment of the invention, below in conjunction with describe the method for the mineralization pressure sensor of the specific embodiment of the invention in detail with reference to figure 1 and Fig. 2～Fig. 9.
In conjunction with reference to figure 1 and Fig. 2, execution step S11, provides semiconductor base 10, has interconnection structure 11 and control circuit 30 in described semiconductor base, on described semiconductor base 10, be formed with bottom electrode 12, described interconnection structure 11 is electrically connected to described bottom electrode 12 and control circuit 30.The thickness of bottom electrode 12 is 0.1 μ m～4 μ m.Interconnection structure 11 is electrically connected to control circuit 30, and therefore, control circuit 30 can provide voltage to bottom electrode 12 by interconnection structure 11.In addition, can also be formed with other device architectures semiconductor base 10 is interior, such as amplifier, D/A converter, analog processing circuit and/or digital processing circuit, interface circuit etc., the method that forms these device architectures can be all CMOS technique.Wherein, interconnection structure 11 can comprise embolism and interconnection line, and its concrete structure need to be definite according to actual conditions, and the interconnection structure 11 in Fig. 2 only plays signal effect, the present invention is not made to any restriction.The material of bottom electrode 12 is selected from aluminium, titanium, zinc, silver, gold, copper, tungsten, cobalt, nickel, tantalum, these metals of platinum one of them or theys' any combination; Or, be selected from polysilicon, non-crystalline silicon, poly-SiGe, these conductive non-metals of amorphous germanium silicon or their any combination; Or, be selected from described metal, conductive non-metals one of them and their any combination and the combination of insulating barrier; But be not limited to these materials, the other materials that also can be known to the skilled person.
In conjunction with reference to figure 1 and Fig. 3, perform step S12, form sacrifice layer 13, cover described bottom electrode 12.Sacrifice layer 13 covers bottom electrode 12 finger sacrifice layers 13 and covers end face and the side of bottom electrode 12, rather than only covers the end face of bottom electrode 12.Wherein, the face that bottom electrode 12 contacts with semiconductor base 10 is bottom surface, and the face relative with this bottom surface is end face, and remaining face is side.In this embodiment, the material of sacrifice layer 13 is amorphous carbon, but is not limited to amorphous carbon, the other materials that also can be known to the skilled person, in addition sacrifice layer can also be other materials, for example silica, non-crystalline silicon, amorphous germanium, photoresist, PI etc.The method that forms in the present embodiment sacrifice layer 13 is: utilize chemical gaseous phase depositing process depositing amorphous carbon, cover semiconductor base 10 and bottom electrode 12, utilize afterwards photoetching, etching technics to remove part amorphous carbon, residue covers the amorphous carbon of bottom electrode 12.Concrete, residue covers the size of the amorphous carbon of bottom electrode 12 and determines according to the size of the top electrodes that needs afterwards to form.This sacrifice layer 13 has defined the position of top electrodes.
In conjunction with reference to figure 1 and Fig. 5, execution step S13, forms top electrodes 14, covers the described semiconductor base 10 of end face, side and part of described sacrifice layer 13, described top electrodes 14 has the first opening 15, and described the first opening 15 exposes described sacrifice layer 13.The thickness of top electrodes 14 is 0.05 μ m～4 μ m.Concrete, the method that forms top electrodes 14 is: with reference to figure 4, utilize CVD method to form conductive layer, cover described semiconductor base 10 and sacrifice layer 13, then, utilize photoetching, etching technics to remove partially conductive layer, residue covers the conductive layer of the described semiconductor base 10 of end face, side and part of sacrifice layer 13; With reference to figure 5, utilize the end face of photoetching, etching technics etching top electrodes 14, in part top surface areas, form the first opening 15, this first opening 15 exposes sacrifice layer 13, for removing sacrifice layers 13 by this first opening 15 in technique afterwards.
In specific embodiment, the material of top electrodes is selected from aluminium, titanium, zinc, silver, gold, copper, tungsten, cobalt, nickel, tantalum, these metals of platinum one of them or theys' any combination; Or, be selected from polysilicon, non-crystalline silicon, poly-SiGe, these conductive non-metals of amorphous germanium silicon or their any combination; Or, be selected from described metal, conductive non-metals one of them and their any combination and the combination of insulating barrier.But be not limited to these materials, the other materials that also can be known to the skilled person.
In conjunction with reference to figure 1 and Fig. 6, perform step S14, by described the first opening 15, remove described sacrifice layer 13, between described top electrodes 14 and bottom electrode 12, form cavity 16.In the specific embodiment of the invention, the material of sacrifice layer 13 is amorphous carbon, and the method for removing described sacrifice layer 13 is: wait ionization oxygen to form oxygen plasma; Described oxygen plasma is passed into described the first opening, is amorphous carbon described in ashing under the condition of 150 ℃～450 ℃ in temperature range.The condition that is 150 ℃～450 ℃ in temperature range is gone down and can be guaranteed that control circuit 30 and interconnection structure 11 in semiconductor base 10 are injury-free except amorphous carbon.
In conjunction with reference to figure 1 and Fig. 8, execution step S15, form dielectric layer 17, cover described semiconductor base 10 and top electrodes 14, described dielectric layer 17 has the second opening 18 in the form of a ring, described the second opening 18 isolates the part top electrodes 14 relative with described bottom electrode 12, and the part top electrodes 14 that this isolates is as pressure sensing district.In specific embodiment, the second opening 18 is ring-type, therefore the slice location at Fig. 8 demonstrates two the second openings, dielectric layer 17 is divided into mid portion 173 and periphery 174, the part that the second opening 18 surrounds is mid portion 173, the part of the second opening 18 peripheries is periphery 174, and mid portion 173 is separated with periphery 174, and the part top electrodes under mid portion 173 is as pressure sensing district.In the specific embodiment shown in Fig. 8, in dielectric layer 17, be also formed with another interconnection structure 19, the part 141 that another interconnection structure 19 covers semiconductor base 10 at top electrodes 14 is electrically connected to described top electrodes 14.Wherein, it should be noted that, in the example shown in Fig. 8, another interconnection structure 19 comprise plug 191 and and be formed on the weld pad 192 on plug 191, wherein plug 191 is electrically connected to the part 141 that top electrodes 14 covers semiconductor base 10, and weld pad 192 is for being electrically connected to external circuit.Dielectric layer 17 comprises first medium layer 171 and is formed on first medium layer the second medium layer 172 on 171, and plug 191 is formed in first medium layer 171, and weld pad 192 is formed in second medium layer 172.But another interconnection structure 19 and dielectric layer 17 shown in Fig. 8 only play example effect, the present invention are not carried out to any restriction, and the concrete number of plies of the concrete structure of another interconnection structure 19 and dielectric layer 17 need to be determined according to actual structure.With the example explanation shown in Fig. 8, there is the formation method of the dielectric layer 17 of the second opening 18, another interconnection structure 19 below: with reference to figure 7, utilize chemical vapour deposition (CVD) to form first medium layer 171, cover semiconductor base 10 and top electrodes 14; First medium layer 171 is carried out to photoetching, etching technics formation through hole, and in through hole, filled conductive material forms plug 191; On plug 191, form weld pad 192; Utilize chemical vapour deposition (CVD) to form second medium layer 172, cover first medium layer 171 and weld pad 192.With reference to figure 8, utilize photoetching, etching technics to form the second opening 18 in the dielectric layer 17 of first medium layer 171 and second medium layer 172 composition.Wherein, the material of first medium layer 171, second medium layer 172 can be selected the material that the those skilled in the art such as silica are habitual.
With the example shown in Fig. 8, the method that forms another interconnection structure has been described above, in concrete application, can have formed the formation method of another interconnection structure and the number of plies of dielectric layer according to the concrete structure adjustment of another interconnection structure.
Then, with reference to figure 9, utilize photoetching, etching technics in second medium layer 172, to form the 3rd opening 20, expose weld pad 192, so that weld pad 192 can be electrically connected to external circuit.
It should be noted that, in the example shown in Fig. 2～Fig. 9, position, the quantity of the first opening and the second opening are not limited to the position shown in figure and quantity, adjust according to actual needs.The size of the first opening and the second opening also needs to adjust according to actual needs.In example shown in Fig. 7～Fig. 9, another interconnection structure 19 is two, and two parts 141 that contact with semiconductor base 10 with top electrodes 14 are respectively electrically connected to; But in concrete application, be not limited to have two another interconnection structures 19; Also can be another interconnection structure 19, any electrical connection in two parts 141 that contact with semiconductor base 10 with top electrodes 14.
In above-described specific embodiment, top electrodes is electrically connected to external circuit by being arranged in another interconnection structure of dielectric layer 17.Figure 10 is the cross-sectional view of the pressure sensor of another embodiment of the present invention, with reference to Figure 10, in the present invention, top electrodes 14 also can be electrically connected to external circuit by being positioned at another interconnection structure 19 of semiconductor base 10, the interconnection structure not being electrically connected to top electrodes 14 in dielectric layer 17.Concrete, another interconnection structure 19 is also that the part 141 that covers semiconductor base 10 by top electrodes 14 is electrically connected to top electrodes 14; Can there are two another interconnection structures 19, be electrically connected to 14 two parts 141 of covering semiconductor base 10 top electrodes respectively; Also can be to there is another interconnection structure 19, be electrically connected to 14 two parts of covering semiconductor base 10 top electrodes, 141 one of them part.Dielectric layer 17 is one deck, without coordinating another interconnection structure of formation, forms sandwich construction.Other are identical with the first embodiment, at this, do not repeat.
The formation method of the mineralization pressure sensor of the technical program is simple.In addition, owing to being coated with sacrifice layer on top electrodes, can prevent that whole top electrodes is exposed to outside, easy oxidized corrosion etc. cause the problem of conductive capability variation.
With reference to figure 9, the present invention also provides a kind of pressure sensor, comprising:
Semiconductor base 10 has control circuit 30 and interconnection structure 11 in described semiconductor base 10, on described semiconductor base 10, is formed with bottom electrode 12, and described interconnection structure 11 is electrically connected to described bottom electrode 12 and control circuit 30;
Top electrodes 14, comprise roof 142, diapire 141 and sidewall 143, described roof 142 is oppositely arranged with described bottom electrode 12, described diapire 141 is positioned on described semiconductor base 10, described sidewall 143 connects diapire 141 and roof 142, between described top electrodes 14 and bottom electrode 12, is cavity 16;
Dielectric layer 17, covers described semiconductor base 10 and top electrodes 14, and described dielectric layer 17 has the second opening 18 in the form of a ring, and described the second opening 18 isolates the part roof 142 of described top electrodes, and the part roof that this exposes is as pressure sensing district.
In specific embodiment, in described dielectric layer 17, be formed with another interconnection structure 19, the part that covers semiconductor base 10 at described top electrodes 14 is electrically connected to described top electrodes 14.Detailed description can be referring to the description of above method part related content.
With reference to Figure 10, in another embodiment, another interconnection structure 19 is positioned at semiconductor base 10, is electrically connected to described top electrodes 14, and detailed description can be referring to the description of above method part related content.
About, the material of top electrodes, bottom electrode, and the detailed content of semiconductor base can, referring to the associated description of the above method part, not repeat at this.
In addition, also can in semiconductor base 10 and dielectric layer 17, all be formed with another interconnection structure.
Pressure sensor and the semiconductor base of the technical program integrate, and in semiconductor base, can be formed with circuit structure, so just the relative circuit structure of pressure sensor can be integrated.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection domain of technical solution of the present invention.
Claims (7)
1. a method for mineralization pressure sensor, is characterized in that, comprising:
Semiconductor base is provided, has control circuit and interconnection structure in described semiconductor base, on described semiconductor base, be formed with bottom electrode, described interconnection structure is electrically connected to described bottom electrode and control circuit;
Form sacrifice layer, cover described bottom electrode;
The top electrodes that forms germanium silicon material, the thickness of top electrodes is 0.05 μ m～4 μ m, covers the described semiconductor base of end face, side and part of described sacrifice layer, and described top electrodes has the first opening, and described the first opening exposes described sacrifice layer;
By described the first opening, remove described sacrifice layer, between described top electrodes and bottom electrode, form cavity;
Form dielectric layer, cover described semiconductor base and top electrodes, described dielectric layer has the second opening in the form of a ring, and described the second opening isolates the part top electrodes relative with described bottom electrode, and the part top electrodes that this isolates is as pressure sensing district.
2. the method for mineralization pressure sensor as claimed in claim 1, is characterized in that, also has another interconnection structure in described semiconductor base, is electrically connected to described top electrodes;
Or, in described dielectric layer, forming another interconnection structure, the part that covers semiconductor base at described top electrodes is electrically connected to described top electrodes.
3. the method for mineralization pressure sensor as claimed in claim 1, is characterized in that, the material of described sacrifice layer is amorphous carbon;
The method that forms described sacrifice layer is chemical vapour deposition (CVD);
The method of removing described sacrifice layer is:
Deng ionization oxygen, form oxygen plasma;
Described oxygen plasma is passed into described the first opening, is amorphous carbon described in ashing under the condition of 150 ℃～450 ℃ in temperature range.
4. the method for mineralization pressure sensor as claimed in claim 1, is characterized in that, described control circuit is cmos circuit.
5. a pressure sensor, is characterized in that, comprising:
Semiconductor base has control circuit and interconnection structure in described semiconductor base, on described semiconductor base, is formed with bottom electrode, and described interconnection structure is electrically connected to described bottom electrode and control circuit;
Top electrodes, comprise roof, diapire and sidewall, described roof and described bottom electrode are oppositely arranged, described diapire is positioned on described semiconductor base, described sidewall connects diapire and roof, between described top electrodes and bottom electrode, be cavity, it is germanium silicon material, and the thickness of top electrodes is 0.05 μ m～4 μ m;
Dielectric layer, covers described semiconductor base and top electrodes, and described dielectric layer has the second opening in the form of a ring, and described the second opening isolates the part roof of described top electrodes, and the part roof that this isolates is as pressure sensing district.
6. pressure sensor as claimed in claim 5, is characterized in that, also has another interconnection structure in described semiconductor base, is electrically connected to described top electrodes;
Or, in described dielectric layer, being formed with another interconnection structure, the part that covers semiconductor base at described top electrodes is electrically connected to described top electrodes.
7. pressure sensor as claimed in claim 5, is characterized in that, described control circuit is cmos circuit.
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| KR20070106225A (en) * | 2006-04-28 | 2007-11-01 | 주식회사 엠디티 | Contact capacitive pressure sensor |
| CN101661012A (en) * | 2009-08-11 | 2010-03-03 | 南京理工大学 | Microfilm capacitive type surface stress sensor used for biochemical detection and manufacture method thereof |
| CN202372297U (en) * | 2011-12-21 | 2012-08-08 | 上海丽恒光微电子科技有限公司 | Pressure sensor |
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| CN106706172A (en) * | 2015-11-12 | 2017-05-24 | 上海丽恒光微电子科技有限公司 | Preparation method of pressure sensor |
| CN106706172B (en) * | 2015-11-12 | 2021-04-02 | 上海丽恒光微电子科技有限公司 | Preparation method of pressure sensor |
| CN106706173B (en) * | 2015-11-12 | 2021-04-02 | 上海丽恒光微电子科技有限公司 | Preparation method of pressure sensor |
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