CN102484086B - Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential - Google Patents
Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential Download PDFInfo
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- 238000012544 monitoring process Methods 0.000 description 14
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- 230000003068 static effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Abstract
A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.
Description
Technical background
The progress of plasma process has promoted the development of semiconductor industry.In semiconductor industry with keen competition, if manufacturer has the ability output maximize and/or produce high-quality device with relatively low cost, can obtain competitive advantage.A kind of method of production control amount is to control release procedure (dechuck sequence) to optimize substrate release time (substrate-release time).
In the substrate course of processing, substrate is held (clamp) conventionally to bottom electrode (lower electrode) (as electrostatic chuck).By direct current (DC) current potential is administered to bottom electrode to produce electrostatic charge between substrate and bottom electrode, thereby can carry out clamping.In order to distribute the heat producing in the substrate course of processing, can inert gas (as helium) be administered to by various pipelines in bottom electrode to the back side of substrate, to improve the heat transfer efficiency between substrate and bottom electrode.Therefore,, due to the helium pressure on substrate, need relatively high electrostatic charge that substrate clamping is arrived to bottom electrode.
Once complete the processing to substrate in process chamber, release procedure carries out in the time that clamp voltage is closed.Even if clamp voltage is arranged to zero, due to the electrostatic charge between substrate and bottom electrode, still there is remaining static strength.In order to make the electrostatic charge electric discharge between substrate and bottom electrode, can produce low-density plasma and carry out the gravitation between balance (neutralize) substrate and bottom electrode.Once electrostatic charge is removed, the lifter pin (lifter pin) that is positioned at bottom electrode can be enhanced, and upwards to raise substrate, substrate is separated from lower electrode surface, thereby mechanical arm can be removed substrate from plasma processing chamber.
If electrostatic charge can not be removed satisfactorily, may there is the situation of part adhesion, cause part substrate to be hinged to lower electrode surface, thereby, in the time that lifter pin is upwards lifted from bottom electrode, cause part substrate breakage.Part adhesion not only can damaged substrate, and the fragment that substrate breakage produces also needs to unload plasma process system so that cleaning process room.
In addition, if not electric discharge satisfactorily of electrostatic charge, abundant electric charge still can exist on substrate, causes substrate and attempt to produce electric arc between process chamber removes the mechanical arm of substrate.Electric arc is uncontrollable event, can cause adverse consequences, for example, equipment on damaged substrate and/or mechanical arm.
In addition and/or alternately, can on bottom electrode, use and the little bias voltage of clamp voltage opposite charge, so that discharge.For example, if clamp voltage is 10 volts, in release procedure, can use to bottom electrode so the voltage charge of-1 volt.The application of the clamp voltage of opposite charge, makes positive charge flow to negative electrical charge, to help the electrostatic force between balancing substrate and bottom electrode.
Consider that operating environment can be different because for the treatment of system type, processing module type, board structure, formula (recipe) etc., for the time cycle of successful execution release procedure can be different.Because the time cycle of application is unforeseen and the consequence of improper release is serious, therefore, tend to release procedure conservatively to apply the long time cycle of specifying, to guarantee having time enough fully to discharge to electrostatic charge.Unfortunately, two kinds of method for releasing (in no-voltage with at the bias voltage of the pole reversal) all still always can not provide safety and the effective method of release substrate.
In some cases, electrostatic charge may be such, and electric discharge only needs the extremely short time.But the method in cycle fixed time can not be provided for the earlier detection method that determines when that substrate can remove from bottom electrode safely.Therefore, when not hinged substrate can remove from process chamber before within whole cycle fixed time not hinged substrate still rest in process chamber, thereby the time be wasted, output is subject to negative effect thus.In addition, discharge plasma and be present in process chamber in extra (with unnecessary) time, also can impel chamber component to degenerate too early and/or unnecessary substrate etching.
In other cases, after the time cycle of specifying, electrostatic charge may fail fully to discharge.Therefore, attempt to remove hinged substrate and can cause substrate breakage.Even if substrate does not break, the electrostatic charge remaining on substrate can cause Pneumatic power elevator apparatus to use large power to lifter pin, to substrate is separated from bottom electrode.Therefore, the power being applied on substrate can cause substrate to depart from operation center, thereby causes substrate suitably not align for next formula step (recipe step).In addition, remain in the electrostatic charge on substrate, can cause producing electric arc between substrate and mechanical arm, thereby cause the damage of equipment on substrate and/or on mechanical arm.
Not only at the appointed time in the cycle, to carry out release procedure, monitor certain mechanical parameter (for example inert gas flow, inert gas pressure, with the strength of lifting pin) and contribute to determine when that substrate can be considered to separate from bottom electrode.For example, if for example, exceed predetermined threshold value towards the inert gas flow (helium flow) of substrate back, electrostatic charge is considered to fully be discharged, and substrate can remove from process chamber.Another example is, if inert gas pressure lower than predetermined threshold value, electrostatic charge is considered to be discharged.Similarly, if the strength of lifting pin lower than predetermined threshold value, substrate is considered to fully be discharged.But if any threshold value is not all passed through (traverse), it is inabundant that electrostatic charge is considered to electric discharge so, the bias voltages/currents of capable of regulating mechanical forces and/or opposite charges.
But said method is time-consuming and loaded down with trivial details often.For example, in one case, at any one time point, one or two parameter can only be adjusted, because once adjust too many parameter, uncontrollable release procedure can be caused.
Owing to the amount of electrostatic charge of clamp voltage can because of many factors (following electrode type, formula, technical module, etc.) and different, so exist highly uncertain.Consider highly uncertain, monitoring mechanical value (for example helium flow amount, the pressure (induced pressure) causing, with or the strength of lifting pin) be not enough to optimize release procedure because mechanical value can not accurately and/or fully characterize the actual electrostatic charge between substrate and bottom electrode.In an illustration, mechanical value (for example inert gas flow, the pressure that inert gas causes, and/or the strength of lifting pin) one of represent that predetermined threshold value (value that the substrate of having specified can discharge from bottom electrode safely) exceedes, but electrostatic charge may be inhomogeneous in the distribution of whole substrate surface.Therefore, may have isolated electrostatic charge district, in this district, electrostatic charge is not fully removed.Therefore, isolated hingedly still may occur, in the time that substrate separates from bottom electrode, causes substrate damage.
In addition,, because the mechanical value of monitoring described in neither one can characterize the actual electrostatic charge between substrate and bottom electrode exactly, even if substrate successfully gets up from bottom electrode lifting, on substrate, still may there is the remaining quantity of electric charge.Therefore, between substrate and mechanical arm, still can produce electric arc, cause the infringement of equipment on substrate and/or on mechanical arm.
In view of the foregoing, need to be used for optimizing the improvement technology of release procedure.
Summary of the invention
In execution mode, the present invention relates to the method for optimizing release procedure, it comprises that the bottom electrode from being arranged in plasma process system process chamber mechanically removes substrate.The method comprises carries out initial analysis.This initial analysis comprises analyzes plasma first electrical characteristic data in groups, and wherein this plasma is formed on this substrate in release procedure process.This initial analysis also comprises these the first electrical characteristic data in groups and electrical characteristic threshold value is in groups compared.This initial analysis further comprises, if these first electrical characteristic data are in groups passed through (traverse) this electrical characteristic threshold value in groups, closes inert gas.The method also comprises that wherein this lifter pin is not lifted to extreme higher position from bottom electrode lifting lifter pin to substrate is up moved.The method further comprises carries out machinery and electrical analysis.This machinery and electrical analysis comprise analysis first mechanical data in groups, and wherein this mechanical data in groups comprises the strength of being used by lifter pin.This machinery and electrical analysis also comprise analysis second electrical characteristic data in groups.This machinery and electrical analysis further comprise this first mechanical data in groups and mechanical threshold are in groups compared, this second electrical characteristic data and this electrical characteristic threshold value in groups is in groups compared.This machinery and electrical analysis also comprise, if this first mechanical data in groups passes through this mechanical threshold in groups and this second, electrical characteristic data are in groups passed through this electrical characteristic threshold value in groups, because substrate release event occurs, remove substrate from bottom electrode.
Above summary only relates in the disclosed many execution modes of the present invention, is not to limit the invention scope that claim limits herein.Below specific embodiment of the invention part is described these and other features of the present invention in more detail in connection with following accompanying drawing.
Brief description of the drawings
The present invention's mode instead of ways to restrain by execution mode in following accompanying drawing describes, and in accompanying drawing, similarly figure numbers refers to similar element, wherein:
Fig. 1 has shown, in embodiment of the present invention, optimizes the simple logic module map of operating environment under release control pattern.
Fig. 2 has shown, in one embodiment of the present invention, for optimizing the simple flow chart of release control program.
Fig. 3 shown, in embodiment of the present invention, and simple plasma impedance figure (plasma impedance plot).
Fig. 4 shown, in embodiment of the present invention, and in the time that lifter pin is positioned at highest order, the graph of a relation of substrate potential and bottom electrode bias voltages/currents.
Fig. 5 A and 5B shown, in embodiment of the present invention, and in the time that lifter pin extends to highest order, the comparison between substrate potential and plasma impedance.
Fig. 6 A and 6B shown, in embodiment of the present invention, and the comparison between bias voltage and plasma impedance.
Fig. 7 shown, in embodiment of the present invention, and the simple resistor curve of each bias voltage set point.
Fig. 8 shown, in embodiment of the present invention, and the comparison of three kinds of release procedures.
Fig. 9 shown, in embodiment of the present invention, and the graph of a relation of substrate motion and electric parameter.
Embodiment
Describe the present invention in detail now with reference to some execution modes shown in accompanying drawing.In order thoroughly to understand the present invention, specification part has below been set forth many details.But, there is no the some or all of of these details, those skilled in the art obviously can implement the present invention.In other cases, well-known method step and/or structure are not described in detail, in order not make the present invention become unnecessary obscure.
Below describe various execution modes, comprised method and skill.Should keep firmly in mind, the present invention can also comprise goods, and these goods comprise computer-readable medium, stores the computer-readable instruction of the execution mode of carrying out invention technology on this computer-readable medium.This computer-readable medium can comprise, for example, and for storing the semiconductor, magnetic of computer-readable code, optomagnetic, optics or other forms of computer-readable medium.In addition, the present invention also can comprise the equipment of carrying out embodiment of the present invention.These equipment can comprise the special and/or programmable circuit of carrying out the task relevant to embodiment of the present invention.The example of these equipment comprises general computer and/or the dedicated computing machine equipment through programming suitably, and can comprise the combination of the computer/computing equipment and the special/programmable circuit that are suitable for the each task relevant to embodiment of the present invention.
According to the embodiment of the present invention, provide the method for optimizing release procedure.Embodiments of the present invention comprise monitoring electric signal and mechanical forces, to determine when that substrate can separate from bottom electrode safely.Embodiments of the present invention also comprise that electric and mechanical force is so that the dissipation of static between substrate and bottom electrode.Embodiments of the present invention further comprise the method that adopts the condition of corrective action successfully to occur with promotion substrate release event for determining.
In this article, as embodiment, different execution modes is discussed with plasma impedance.But the present invention is not limited only to plasma impedance, and can be included in any electric parameter that may exist in release event.Alternatively, described discussion is as just embodiment, and the present invention is not limited to these embodiment.
In embodiments of the present invention, provide by observing electric signal and/or mechanical force, determined safely from the method for the best opportunity of bottom electrode separating base plate.Consider situation wherein, for example, start release procedure.Unlike prior art, release procedure is not to carry out within the time cycle of specifying.In addition, unlike prior art, not merely rely on the feedback (for example inert gas flow, inert gas pressure, and the strength of lifting pin) of mechanical force from bottom electrode separating base plate.On the contrary, by monitoring the auxiliary release procedure of machinery and electric parameter.These parameters comprise the electric parameter of mechanical forces (for example inert gas flow, inert gas pressure, and the strength of lifting pin), driving plasma and are administered to the electric parameter of bottom electrode.By monitoring above-mentioned parameter, can determine substrate potential and the substrate position with respect to bottom electrode, to determine when substrate can remove from bottom electrode safely.
In execution mode, monitor continuously mechanical forces and electric signal.Therefore, the problem (for example, substrate part is hinged to bottom electrode) that may occur in release procedure process is discernible, and can take suitable corrective action to carry out correction problem.
By reference to the accompanying drawings and following description, the feature that the present invention may be better understood and advantage.
Fig. 1 has shown, in embodiments of the present invention, optimizes the simple logic module map of operating environment under release control pattern.Plasma process system 102 comprises power supply (generator source) 104, and this power supply is arranged to provide power by matching network 110 to process chamber 108.
Process chamber 108 can comprise electrostatic chuck 120 (, bottom electrode).In processing substrate process, substrate (not shown) is clamped to electrostatic chuck 120 conventionally.Can use direct current (DC) current potential by DC power supply 122, to produce electrostatic charge between substrate and electrostatic chuck 120, thereby implement clamping.In order to improve the heat conduction between substrate and electrostatic chuck 120, use inert gas (as helium) by the various pipeline (not shown)s in electrostatic chuck 120 to substrate back.Therefore, for substrate temperature, control is important part in clamping, obtains appropriate control because the helium that correct clamping makes substrate back is cooling.But, due to the induction pressure that inert gas causes, need relatively high clamp voltage, to produce enough powerful gravitation between substrate and electrostatic chuck 120.
Once processing substrate completes, can carry out release procedure to make the electrostatic charge electric discharge between substrate and electrostatic chuck 120.Conventionally, release procedure comprises closes clamp voltage, and produces that lower powered plasma carrys out neutralize static charges and etching substrates not.
In the prior art, monitoring method comprise observe mechanical parameter (as helium gas flow, induction pressure, the strength that lifter pin is used, etc.), this parameter may affect substrate and separate from electrostatic chuck 120.But described mechanical parameter (as helium gas flow, induction pressure, the strength of lifter pin) does not characterize the electrostatic attraction between substrate and electrostatic chuck 120 exactly.
In one embodiment, method for monitoring electric parameter (except mechanical parameter) is provided, can be learnt one or more characteristics (with respect to the substrate motion of electrostatic chuck 120, electrostatic charge space homogeneity, and substrate potential) of electrostatic charge by this electric parameter.In addition, unlike prior art, parameter is measured continuously, to not only determine when that electrostatic charge fully discharges, and determines when and need to take corrective action to promote release procedure.
For best release control scheme is provided, tool controller (tool controller) 124 can receive the operating data of separate sources.Be understandable that, operating data can be analog form or number format.In one embodiment, tool controller 124 can receive the voltage and current data from transducer 112.Had voltage data and current data, plasma impedance just can be determined.In the time that the physical perturbation of substrate causes plasma oscillation, because plasma impedance can affect the electric characteristic of plasma, thereby just monitor plasma impedance.Physical perturbation can be caused by the removal of main static strength.Cause that physical perturbation reason can be also that the capacity for example, causing because of mechanical forces (lifter pin is from electrostatic chuck 120 liftings) between substrate and electrostatic chuck 120 increases.In addition, physical perturbation can be caused from the last separation of electrostatic chuck 120 by substrate.
In one embodiment, tool controller 124, also can receive about the data that come from inert gas (as the helium) flow between substrate and the electrostatic chuck 120 of inert gas controller 126.Tool controller 124 also can receive about the data of lifter pin height that come from Pneumatic elevation pin assembly 128.In addition, tool controller 124 can receive about the data of bias voltages/currents that come from DC power supply 122.
Along with the data flow from various data sources constantly flows into, tool controller 124 monitoring parameter continuously.In one embodiment, analyze collected data, to determine when that substrate can and remove from process chamber 108 from electrostatic chuck 120 liftings.In addition or alternately, analyze the data of collecting and need corrective action to determine when.In one embodiment, the distribution of the electrostatic charge of whole substrate surface may be inhomogenous.In one embodiment, tool controller 124 can be used the bias voltages/currents of extra opposite charge by instruction DC power supply 122 to one or more limits (pole of electrostatic chuck 120) of electrostatic chuck 120, to promote the not fully neutralization of the electrostatic charge of the regional area of electric discharge.In another embodiment, if need extra inert gas pressure based on data analysis, can use extra inert gas pressure, substrate is removed from electrostatic chuck 120.
Fig. 2 has shown, in one embodiment of the present invention, for optimizing the simple flow chart of release control program.
Substrate is disposed in the first step 202.Consider situation wherein, for example, substrate is interior etched at process chamber 108.Once main etching completes, substrate can discharge and remove from process chamber 108.For starting release procedure, reduce gradually power (power for example being provided by power supply 104).Therefore, can form low-power (low-powered) plasma with in and substrate on electrostatic charge.
Process chamber soar in next step 204 (chip back surface inert gas).In other words the high pressure (being about 20-30torrs (holder) in one embodiment), using in treatment substrate process is extracted out from process chamber 108.
Clamp voltage 206 is closed at next step.Clamp voltage is DC current potential, and it is to be administered to electrostatic chuck 120 to produce electrostatic charge on substrate by DC power supply 122.By closing clamp voltage, DC potential is set to zero.
The inert gas flow at the back side 208 is administered to substrate at next step.As previously mentioned, inert gas (as helium) is applied to substrate back in processing substrate process, to start the heat transmission between substrate and electrostatic chuck 120.In order to fix substrate (particularly in the time that inert gas flow is applied to substrate back) in processing substrate process, clamp voltage can be applied to electrostatic chuck 120, to make substrate clamping to electrostatic chuck 320.Therefore,, in the time that clamp voltage is arranged to no-voltage (in step 206), since clamp voltage can not remain on the electrostatic force between substrate and electrostatic chuck 120 again, the inert gas flow at the back side just separates substrate from electrostatic chuck 120.
In the time that clamp voltage is closed, substrate can flexing (flex) be got back to its nature.The flexing of substrate can cause vibration in plasma, and this vibration can be by the variation reflection of the electric characteristic of plasma.With reference to accompanying drawing 3, in one embodiment, provide simple plasma impedance figure.The plasma impedance that graph line (Plot line) 302 has shown after clamp voltage is closed.Can find out, at point 304, when shown in DC potential while being set to zero, there is disturbance in the plasma impedance of plasma.In other words,, when clamp voltage is closed, substrate flexing is got back to its nature.The flexing of substrate can cause the vibration of plasma, and this vibration can change into the variation (as plasma impedance) of the electric characteristic of plasma.
But plasma impedance may not show any variation.For example, if in processing substrate process, need relatively high electrostatic charge that substrate clamping is arrived to electrostatic chuck 120, suppose still to have the electrostatic charge (as shown in graph line 306) of high residue, the removal of clamp voltage may not can cause the disturbance of plasma impedance so.Therefore, embodiment of the present invention provides the monitoring of multiple electric parameters and has analyzed and eliminate potential mistake survey (false positive).
Get back to accompanying drawing 2, one or more electric parameters are analyzed in next step 210.The example of electric parameter comprises plasma impedance, DC offset voltage/electric current, generator power (generator power) etc.Can be caught by transducer 112 (for example voltage/current probe) and be sent to tool controller 124 about the data of electric parameter and analyze.
Operating data next step 212 with threshold in groups.If operating data is not passed through threshold value in groups, electrostatic charge is considered to fully do not discharged, and in one embodiment, single electric parameter (as plasma impedance) can compare with predetermined threshold value.In another embodiment, the combination of electric parameter can compare with threshold value in groups.Can as seen from the above, can set standard of comparison, according to this standard, before electrostatic charge is interpreted as power amplifier electricity, certain electric signal combination must be passed through.
Discuss according to institute herein, term passes through and can comprise and exceed, drop to ... (fall below) below horizontal, in scope, etc.The implication of passing through is determined by the requirement of threshold values/ranges.In one embodiment, if formula (recipe) needs plasma impedance, for example, be at least certain value, if plasma impedance value has met or exceeded threshold values/ranges, so just think that operating data passed through threshold values/ranges.In another embodiment, if formula needs plasma impedance, for example, lower than a value, if plasma impedance value has been down to below threshold values/ranges, so, just think that operating data passed through threshold values/ranges.
214 carry out time check (time check) at next step.Therefore, time check relates to the time allowing for the formula of release procedure.Because each formula may be different, the time threshold of each formula may be different.In one embodiment, if distributed 5 seconds with formula 1 release procedure, threshold value can be set to 3 seconds so.But, if with formula 2 release procedures distributed 10 seconds, threshold value can be arranged to a higher value so.Can be as seen from the above, threshold value can be calculated by theory or experience.
In one embodiment, if remaining time overtime threshold value is adjusted inert gas parameter in next step 216 so.In an example, the pressure of gas can increase.After inert gas flow is adjusted, system can turn back to step 210 and analyze the electric parameter operating data of collecting recently.In one embodiment, if inert gas pressure and/or gas flow have exceeded predetermined threshold value, consider that too much adjustment can cause the uncontrolled release event of understanding damaged substrate and/or processing chamber components to inert gas pressure/flow, so just do not adjust inert gas pressure/flow.
Above-mentioned steps is the step that can repeat, and these steps repeat until (in step 212) shows more afterwards always, and this threshold value has in groups been passed through or the time has been finished (in step 214).Now, this system enter into next step 218.
In step 218, inert gas flow is closed, and Pneumatic power elevator apparatus is not lifter pin lifting slightly (wherein, lifter pin is lifted to maximum height).In other words, lifter pin is arranged in electrostatic chuck 120 no longer completely.On the contrary, lifter pin upwards moves slowly provides the operating data about used strength, described data will be hunted down and send to tool controller 124 for analyzing.
In next step 220, the strength used measured and and threshold value compare.Consider situation wherein, for example, the strength of monitoring due to lifter pin is lower than threshold value.Be different from prior art, method of the present invention is not fully discharged the strength of lifter pin can remove safely the index of substrate as electrostatic charge lower than threshold value.
On the contrary, in execution mode, not only mechanical force is performed an analysis, and electric parameter is analyzed to (step 222).In one embodiment, single electric parameter (as plasma impedance) can compare with threshold value.In another embodiment, the combination of electric parameter (as the power of plasma impedance and generator) compares with threshold value in groups.
If one or both parameters (strength and electric parameter group) are not by contrast test (step 224), lifter pin can not extend to its extreme higher position so, because electrostatic charge is considered to not fully electric discharge.Alternatively (instead), in step 226, carries out time check.
If also have time enough, can 228 take corrective action at next step.Corrective action can comprise the pressure that increases inert gas.It should be noted that if the pressure of inert gas has reached predetermined threshold value, no longer use extra pressure.Another kind of corrective action can comprise the strength increasing on lifter pin.Other corrective actions that also have can comprise to bottom electrode 108 and apply opposite polarity bias voltages/currents.
In one embodiment, not to use equably corrective action at whole substrate surface, but use partly corrective action.In other words,, if the area of isolation of substrate is still hinged on bottom electrode, corrective action can be administered to this area of isolation.In one embodiment, electrostatic chuck 120 can be dual polarity electrostatic sucker.Operating data shows, the substrate regions around the utmost point 1 still has many residual static electricity lotuses.Therefore, can use to the utmost point 1 bias voltages/currents of higher opposite charges, to promote the neutralization of this region electrostatic charge.
Can as seen from the above, optionally adopt the method for corrective action, make substrate be subject to possibility to be processed substantially to drop to minimum.In one embodiment, if substrate overwhelming majority region is not hinged, uses higher bias voltage at whole substrate surface and may cause substrate " damage ".But if corrective action is only for disconnecting hinged region, corrective action is applied in the process of release substrate, instead of be applied in unproductive or or even destructive activity in.
Step 220 is carried out repeatedly to 228, until (in step 224) shows more afterwards, this threshold value is in groups passed through, and substrate can be finished (step 226) from bottom electrode (step 230) separation or time safely.
If the time is finished in step 226, so in next step 232, can carry out emergency procedure.Emergency procedure can be different because of formula.In one embodiment, emergency procedure can comprise just treat release And Spread of Solute send alert notice.In another embodiment, need human intervention to solve release And Spread of Solute.Although protective substrate integrality is desirable, emergency procedure can comprise that using larger strength by Pneumatic power elevator apparatus separates substrate from bottom electrode, to substrate is shifted out from process chamber.The requirement of some emergency procedure can be also to safeguard the reset instruction of process chamber of process chamber.
As can be seen from Figure 2, the innovation method provides release control prioritization scheme.By monitoring electric and mechanical value, not only determine the best opportunity of substrate release event but also can help substrate release event.Correspondingly, unlike prior art, when staying process chamber in the time cycle that not hinged substrate is being specified, do not lose time.In addition, because substrate release event is mechanical value and the electrical characteristic based on plasma, greatly eliminate the possibility that mistake is surveyed, in addition, if release procedure does not carry out with immediate mode, can be by regulating some machinery and/or electric parameter to assist release procedure.
In order to verify the relation between the physical perturbation performance of bias voltages/currents and substrate, set up empirical model, in this model, in release procedure process, test base is monitored.Fig. 4 shows, in embodiments of the present invention, chart 402 illustrated, in the time that lifter pin reaches extreme higher position, and the relation between substrate potential and bottom electrode bias voltages/currents.Affect the factor (as electric current, voltage etc.) of substrate potential by identification, during same substrate potential model can be applicable to produce, to determine when need to take corrective action.
Fig. 5 A and 5B show, in embodiment of the present invention, and when lifter pin extends to its extreme higher position, the contrast between substrate potential and plasma impedance.This curve (plot) shows that the substrate (curve 306 of Fig. 3 is corresponding with Fig. 5 B) of no resistance signal compares and have higher substrate potential with the substrate (curve 302 of Fig. 3 is corresponding with Fig. 5 A) that has impedance signal.In other words,, in the time that substrate separates from bottom electrode, the substrate of curve 306 has higher residual static electricity lotus than the substrate of curve 302.Thereby the substrate (curve 306) with high potential may not can be suitably discharged.
Fig. 6 A and 6B shown, in embodiments of the present invention, and the comparison between bias voltage and plasma impedance.As previously mentioned, adopt opposite polarity bias supply (bias supply) (voltage or electric current), can reduce the electrostatic force between substrate and bottom electrode.Consider situation wherein, for example, the clamp voltage of using between substrate and bottom electrode in order to produce electrostatic charge in processing substrate process has positive charge.By using the bias voltage compared with electronegative potential, electrostatic force reduces, thereby makes substrate show physical perturbation.This physical perturbation causes vibration in plasma.Vibration is hunted down as the variation of plasma impedance.
Curve 602 has shown as the increase of the bias voltage of the function of time (as shown in Figure 6A).Curve 604 has shown the corresponding plasma impedance (as shown in Figure 6B) as the function of time.For each increase of curve 602 upper offset voltages, curve 604 has shown corresponding plasma impedance disturbance.Therefore, the variation of bias voltage just has corresponding plasma impedance to change.
Although plasma impedance has reflected the motion conditions of substrate conventionally, may occur that the variation of bias voltage can not reflect the situation that plasma impedance changes.In an embodiment, locating (606a and 606b section) at about 400 seconds, there is variation in bias voltage, but does not occur corresponding variation in plasma impedance curve.Therefore, method of the present invention provides the monitoring of multiple electric parameter to survey with the mistake of explanation current potential.
Fig. 7 shown, in execution mode, and the simple resistor curve of each bias voltage set point.Curve 702 shows the resistance curve of the utmost point in bottom electrode, and curve 704 has shown the resistance curve of the outer utmost point of bottom electrode.Can find out from these two curves, each needs different current potentials that substrate clamping is arrived to bottom electrode most probably.Therefore, in dispose procedure, each utmost point need to be used different bias voltages, to the electrostatic charge of each utmost point peripheral region is removed.As can be seen from the above, even if Fig. 7 has shown bias voltage, bias current can be analogized same result.
Fig. 8 shown, in embodiment of the present invention, and the comparison of three kinds of release procedures.Curve 802 and 804 has all shown that substrate successfully separates from bottom electrode.But curve 804 shows the electric signal (as plasma impedance) that vibration is more serious.So, need larger strength to promote separation.Therefore, the substrate shown in curve 804 may depart from its processing center.By knowing the amplitude of vibration, can take corrective action to correct potential dislocation (for the substrate of curve 804).
As previously mentioned, mechanical force (as inert gas flow, improve lifter pin, etc.) application may contribute to substrate to separate from bottom electrode.But, can not use equably mechanical forces.Therefore,, because substrate isolates region is hinged to bottom electrode, substrate can be bent upwards.An example of curve 806 display base plate bendings.Can find out from curve 806, the electrostatic charge on substrate is fully electric discharge not, because electric signal (as plasma impedance) does not show obvious disturbance as shown in curve 802 or 804.By monitoring electric signal (as plasma impedance), can take corrective action, to promote the elimination of electrostatic charge.
Fig. 9 shown, in embodiments of the present invention, substrate motion is how to be reflected in electric parameter.In one embodiment, when helium flow changes (curve 902), electric signal change (as plasma impedance) (as shown in curve 904).For example, locate about 75 seconds (906), the helium flow at the back side is administered to substrate, when helium, substrate is lifted to the physical perturbation that has caused substrate from bottom electrode.Approximately at one time, (shown in curve 904) vibrates in plasma impedance.Equally, when helium flow is in the time that within about 78 seconds, (908) are located to close, plasma impedance has reflected vibration, even if this vibration is relatively light.
Can find out from one or more embodiments of the present invention, the method for optimizing release procedure is provided.By monitoring mechanical force and electrical characteristic, the risk of bringing from bottom electrode separating base plate is minimized significantly, thereby has reduced substrate waste.In addition, thus continue to monitor make to apply corrective action promote release procedure.Thus, can reach higher output, reduce to greatest extent the risk of substrate and tool assembly (for example chamber component and mechanical arm) simultaneously.
Although this invention is described by the method for some preferred implementations, can there be change, conversion and equivalent in the scope of the invention of falling into.Although various execution modes provided herein, for the present invention, being intended that of these execution modes is illustrative and nonrestrictive.
In addition, it is for simplicity that title and summary are provided herein, should not be used for explaining the claims in the present invention scope.In addition, summary is write as with the form of Simplification, for simplicity provided herein, therefore should not be used for explaining or limit statement whole invention in the claims.If used term " (set) in groups " herein, the implication of this term is the mathematical meaning of conventionally understanding, and comprises zero, one or more member.Should also be noted that implementing method and apparatus of the present invention has many other methods.Therefore, following claims are intended to be construed as comprising all these changes, conversion and the equivalent in the real spirit and scope of all the present invention of falling into.
Claims (18)
1. for optimizing the method for release procedure, this release procedure comprises that the bottom electrode from being arranged in plasma process system process chamber mechanically removes substrate, and the method comprises:
Carry out initial analysis, wherein, this initial analysis comprises:
Analyze plasma first electrical characteristic data in groups, wherein, this plasma is formed on this substrate in described release procedure process,
These first electrical characteristic data in groups and electrical characteristic threshold value are in groups compared, and
If these first electrical characteristic data are in groups passed through this electrical characteristic threshold value in groups, close inert gas;
From described bottom electrode lifting lifter pin to described substrate is up moved, wherein, this lifter pin is not lifted to extreme higher position; With
Carry out machinery and electrical analysis, wherein, this machinery and electrical analysis comprise:
Analysis first mechanical data in groups, wherein, this mechanical data in groups comprises the strength of being used by this lifter pin,
Analysis second electrical characteristic data in groups,
This first mechanical data in groups and mechanical threshold are in groups compared and this second electrical characteristic data and this electrical characteristic threshold value in groups is in groups compared, and
If this first mechanical data in groups passes through this mechanical threshold in groups and this second, electrical characteristic data are in groups passed through this electrical characteristic threshold value in groups, because substrate release event occurs, remove this substrate from this bottom electrode.
2. method according to claim 1, if do not pass through this electrical characteristic threshold value in groups in the first electrical characteristic data in groups described in described initial analysis, it further comprises execution,
Comparing for current time and the very first time threshold value of carrying out described release procedure,
Be greater than described very first time threshold value if described for carrying out the described current time of described release procedure, adjust described inert gas, and
Repeat described initial analysis.
3. method according to claim 1, if do not pass through this electrical characteristic threshold value in groups in the first electrical characteristic data in groups described in described initial analysis, it further comprises execution,
Comparing for current time and the very first time threshold value of carrying out described release procedure,
If be not more than described very first time threshold value for carrying out the described current time of described release procedure, close described inert gas and from lifter pin described in described bottom electrode lifting with the described substrate that moves up, wherein, described lifter pin is not raised to described extreme higher position, and
Carry out described machinery and electrical analysis.
4. method according to claim 1, if the first mechanical data in groups does not pass through this mechanical threshold in groups described at least one, and the described second electrical characteristic data in groups are not passed through this electrical characteristic threshold value in groups, and it further comprises execution
Comparing for current time and the second time threshold of carrying out described release procedure,
If be greater than described the second time threshold for carrying out the described current time of described release procedure, adopt corrective action, and
Repeat described machinery and electrical analysis.
5. method according to claim 4, wherein, described corrective action comprises increases described inert gas pressure.
6. method according to claim 4, wherein, described corrective action comprises increases the described strength of being used by described lifter pin.
7. method according to claim 4, wherein, described corrective action comprises to described bottom electrode uses at least one opposite polarity bias voltage and bias current.
8. method according to claim 4, wherein, described corrective action is not to be applied in equably whole described substrate surface.
9. method according to claim 1, if the first mechanical data in groups does not pass through this mechanical threshold in groups described at least one, and the described second electrical characteristic data in groups are not passed through this electrical characteristic threshold value in groups, and it further comprises execution
Comparing for current time and the second time threshold of carrying out described release procedure, and
If be not more than described the second time threshold for carrying out the described current time of described release procedure, adopt emergency procedure to described substrate is removed from described bottom electrode.
10. method according to claim 9, wherein, described emergency procedure comprises transmission alert notice.
11. methods according to claim 9, wherein, described emergency procedure comprises to described lifter pin and applies high-caliber strength to described substrate is removed from described bottom electrode.
12. methods according to claim 1, wherein, this electrical characteristic in groups comprises plasma impedance.
13. methods according to claim 1, wherein, this electrical characteristic in groups comprises DC offset voltage.
14. methods according to claim 1, wherein, this electrical characteristic in groups comprises current feedback circuit power.
15. methods according to claim 1, wherein, this electrical characteristic is in groups single electrical characteristic parameter, wherein, described single electrical characteristic parameter is determined and in the time that test base occurs physical perturbation in described release procedure, is occurred maximum variation by experience.
16. methods according to claim 1, wherein, this electrical characteristic in groups comprises more than one electric parameter, wherein, electric parameter combination and multiple threshold, to determine described substrate release event.
17. methods according to claim 1, wherein, analysis and comparison is undertaken by tool controller.
18. methods according to claim 1, wherein, described inert gas is helium.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/557,381 | 2009-09-10 | ||
| US12/557,381 US20110060442A1 (en) | 2009-09-10 | 2009-09-10 | Methods and arrangement for detecting a wafer-released event within a plasma processing chamber |
| US12/557,387 | 2009-09-10 | ||
| US12/557,387 US8797705B2 (en) | 2009-09-10 | 2009-09-10 | Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential |
| PCT/US2010/047382 WO2011031590A2 (en) | 2009-09-10 | 2010-08-31 | Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential |
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| CN102484086A CN102484086A (en) | 2012-05-30 |
| CN102484086B true CN102484086B (en) | 2014-10-15 |
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| CN2010800389607A Pending CN102598237A (en) | 2009-09-10 | 2010-08-31 | Methods and arrangement for detecting a wafer-released event within a plasma processing chamber |
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| Country | Link |
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| JP (2) | JP2013504873A (en) |
| KR (2) | KR20120073227A (en) |
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| US8520360B2 (en) * | 2011-07-19 | 2013-08-27 | Lam Research Corporation | Electrostatic chuck with wafer backside plasma assisted dechuck |
| JP6789099B2 (en) * | 2016-12-26 | 2020-11-25 | 東京エレクトロン株式会社 | Measurement method, static elimination method and plasma processing equipment |
| US10770257B2 (en) * | 2018-07-20 | 2020-09-08 | Asm Ip Holding B.V. | Substrate processing method |
| US11437262B2 (en) | 2018-12-12 | 2022-09-06 | Applied Materials, Inc | Wafer de-chucking detection and arcing prevention |
| JP7450512B2 (en) | 2020-10-07 | 2024-03-15 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
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| US7218503B2 (en) * | 1998-09-30 | 2007-05-15 | Lam Research Corporation | Method of determining the correct average bias compensation voltage during a plasma process |
| US6570752B2 (en) * | 1999-12-28 | 2003-05-27 | Nikon Corporation | Wafer chucks and the like including substrate-adhesion detection and adhesion correction |
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| JP2002203837A (en) * | 2000-12-28 | 2002-07-19 | Mitsubishi Electric Corp | Plasma treatment method and apparatus, and manufacturing method of semiconductor device |
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- 2010-08-31 WO PCT/US2010/047380 patent/WO2011031589A2/en active Application Filing
- 2010-08-31 SG SG2012009627A patent/SG178372A1/en unknown
- 2010-08-31 KR KR1020127006357A patent/KR20120073226A/en not_active Withdrawn
- 2010-08-31 WO PCT/US2010/047382 patent/WO2011031590A2/en active Application Filing
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| Publication number | Publication date |
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| JP5735513B2 (en) | 2015-06-17 |
| KR20120073226A (en) | 2012-07-04 |
| WO2011031590A3 (en) | 2011-06-30 |
| SG10201405047VA (en) | 2014-10-30 |
| SG178372A1 (en) | 2012-03-29 |
| WO2011031590A2 (en) | 2011-03-17 |
| JP2013504874A (en) | 2013-02-07 |
| JP2013504873A (en) | 2013-02-07 |
| CN102598237A (en) | 2012-07-18 |
| SG178374A1 (en) | 2012-03-29 |
| WO2011031589A3 (en) | 2011-06-03 |
| CN102484086A (en) | 2012-05-30 |
| KR20120073227A (en) | 2012-07-04 |
| WO2011031589A2 (en) | 2011-03-17 |
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