CN102467972A - Dynamic shift register unit and dynamic shift register - Google Patents
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Abstract
本发明提供的动态移位寄存器单元及动态移位寄存器,采用五个MOS管和一个电容即可完成输入信号的移位,即输出端的输出信号在相位上比输入信号滞后1/4周期。该移位寄存器单元利用电容的存储功能,在脉冲信号的第三个1/4周期内,将脉冲信号的有效电平区间输出到输出端,因此,该移位寄存器属于利用电容实现自反馈的动态移位寄存器。本发明提供的动态移位寄存器利用电容即可实现自反馈,从而简化电路结构,节省版图面积。
The dynamic shift register unit and the dynamic shift register provided by the present invention can complete the shift of the input signal by using five MOS transistors and one capacitor, that is, the output signal at the output terminal lags behind the input signal by 1/4 cycle in phase. The shift register unit uses the storage function of the capacitor to output the effective level range of the pulse signal to the output terminal in the third 1/4 period of the pulse signal. Therefore, the shift register belongs to the self-feedback using capacitor Dynamic shift register. The dynamic shift register provided by the present invention can realize self-feedback by using a capacitor, thereby simplifying the circuit structure and saving layout area.
Description
技术领域 technical field
本发明涉及寄存器技术领域,特别涉及一种动态移位寄存器单元及动态移位寄存器。The invention relates to the technical field of registers, in particular to a dynamic shift register unit and a dynamic shift register.
背景技术 Background technique
当显示器面板工作时,显示器面板的驱动电路必须要有扫描动作,逐一地打开薄膜晶体管阵列的每一条扫描线路,使得此行的数据信号传输进薄膜晶体管阵列内的每一个显示单元。这样的扫描动作是由移位寄存器来完成的。When the display panel is working, the driving circuit of the display panel must have a scanning action to turn on each scanning line of the thin film transistor array one by one, so that the data signal of this line is transmitted to each display unit in the thin film transistor array. Such scanning action is accomplished by the shift register.
下面结合附图介绍现有技术中的移位寄存器,参见图1,该图为索尼公司的一款移位寄存器的电路图,该移位寄存器对应的专利申请号是US7283117。The shift register in the prior art will be introduced below with reference to the accompanying drawings. Referring to FIG. 1 , this figure is a circuit diagram of a shift register produced by Sony Corporation. The patent application number corresponding to the shift register is US7283117.
该移位寄存器包括一个移位器11和一个保持器12。The shift register includes a
其中,移位器11包括一个与非电路,该与非电路接收输入脉冲st。输入脉冲st作为整个移位寄存器的使能信号,该电路中当输入脉冲st为低电平时,该移位寄存器才开始工作。Wherein, the
保持器12包括一个PMOS管Qp21和一个NMOS管Qn21,该PMOS管Qp21和NMOS管Qn21串联后连接在电源VDD和时钟脉冲ck之间,PMOS管Qp21和NMOS管Qn21的栅极和漏极分别连接在一起。The
保持器12的输入端A连接与非电路的输出端,保持器12的输出端out作为下一个寄存器的输入端。The input terminal A of the
下面结合图2介绍图1的工作原理,参见图2,该图为图1中的各个信号的波形图。The working principle of FIG. 1 is described below in conjunction with FIG. 2 . Referring to FIG. 2 , the figure is a waveform diagram of each signal in FIG. 1 .
在t11-t12时间段,输入脉冲st为低电位,PMOS管Qp11打开,NMOS管Qn11关闭,保持器12的输入端A点电位为高;进而PMOS管Qp21关闭,NMOS管Qn21打开,并将时钟脉冲ck作为输出信号输出至保持器12的输出端out,该时刻时钟脉冲ck为高电位,同样保持器12的输出端out也为高电位。During the t11-t12 time period, the input pulse st is at a low potential, the PMOS transistor Qp11 is turned on, the NMOS transistor Qn11 is turned off, and the potential at point A of the input terminal of the
在t12-t13时间段,PMOS管Qp11、NMOS管Qn11、PMOS管Qp21和NMOS管Qn21的开关状态与t11-t12时间段内保持不变,但因为时钟脉冲ck从高电位变为低电位了,所以保持器12的输入端out出为低电位,同时将PMOS管Qp12打开,保持器12的输入端A点为高电位。During the t12-t13 time period, the switching states of the PMOS transistor Qp11, NMOS transistor Qn11, PMOS transistor Qp21 and NMOS transistor Qn21 remain unchanged from the t11-t12 time period, but because the clock pulse ck changes from high potential to low potential, Therefore, the input terminal out of the
在t13-t14时间段,输入脉冲st电位从低变为高。PMOS管Qp11关闭,NMOS管Qn11打开,因为转态瞬间,PMOS管Qp12因为保持器12的输入端OUT信号的作用,保持打开状态,进而保持器12的输入端A点保持为高电位,持续将ck的低信号输出至out。During the t13-t14 time period, the input pulse st potential changes from low to high. The PMOS transistor Qp11 is turned off, and the NMOS transistor Qn11 is turned on, because at the moment of transition, the PMOS transistor Qp12 is kept open due to the OUT signal of the
在t14-t15时间段,ck变成高电位,保持器12的输出端out也在瞬间变成高电位,同时作用于NMOS管Qn12。因为该时刻输入脉冲st也为高电位,作用于NMOS管Qn11,保持器12的输入端A点变成了低电位,将PMOS管Qp21打开,VDD被输出至保持器12的输入端out,并形成一个自反馈的循环,保持器12的输出端out输出为高电位,从而完成了一个完整的移位过程。During the time period t14-t15, ck becomes a high potential, and the output terminal out of the
从图2中可以看出,在一个时钟脉冲周期内,保持器12的输出端out的信号比输入脉冲st的信号向后移位了1/4周期,完成了一个周期内的移位。It can be seen from FIG. 2 that within one clock pulse cycle, the signal at the output terminal out of the
索尼公司的这款移位寄存器是静态移位寄存器,其工作原理是使用电路本身的自反馈而完成对电路中节点电位的保持,但是这种静态移位寄存器的结构比较复杂,对应的版图面积也较大。Sony's shift register is a static shift register. Its working principle is to use the self-feedback of the circuit itself to maintain the potential of the nodes in the circuit. However, the structure of this static shift register is relatively complicated, and the corresponding layout area Also larger.
发明内容 Contents of the invention
本发明要解决的技术问题是提供一种动态移位寄存器单元及动态移位寄存器,电路结构比较简单,对应的版图面积较小。The technical problem to be solved by the present invention is to provide a dynamic shift register unit and a dynamic shift register, the circuit structure is relatively simple, and the corresponding layout area is relatively small.
本发明提供一种动态移位寄存器单元,包括:第一PMOS管、第二PMOS管、第一NMOS管、第二NMOS管、第三NMOS管和第一电容;The present invention provides a dynamic shift register unit, comprising: a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor and a first capacitor;
所述第一PMOS管的栅极和第一NMOS管的栅极均接输入信号;Both the gate of the first PMOS transistor and the gate of the first NMOS transistor are connected to the input signal;
所述第一PMOS管的漏极和第一NMOS管的漏极均连接第一节点;Both the drain of the first PMOS transistor and the drain of the first NMOS transistor are connected to the first node;
所述第一电容连接在所述第一节点和地之间;The first capacitor is connected between the first node and ground;
所述第一PMOS管的源极和第二PMOS管的源极均接电源;Both the source of the first PMOS transistor and the source of the second PMOS transistor are connected to a power supply;
所述第一NMOS管的源极连接第二NMOS管的漏极,第二NMOS管的源极接地,第二NMOS管的栅极连接输出端;The source of the first NMOS transistor is connected to the drain of the second NMOS transistor, the source of the second NMOS transistor is grounded, and the gate of the second NMOS transistor is connected to the output terminal;
所述第二PMOS管的栅极和第三NMOS管的栅极均连接所述第一节点;Both the gate of the second PMOS transistor and the gate of the third NMOS transistor are connected to the first node;
所述第二PMOS管的漏极和第三NMOS管的漏极均连接输出端;Both the drain of the second PMOS transistor and the drain of the third NMOS transistor are connected to the output terminal;
所述第三NMOS管的源极接脉冲信号。The source of the third NMOS transistor is connected to the pulse signal.
优选地,所述输入信号为低电平有效。Preferably, the input signal is active low.
本发明实施例还提供一种动态移位寄存器,包括脉冲信号发生器,还包括N个所述动态移位寄存器单元,N为正整数;第一个动态移位寄存器单元的输入端连接输入信号,前一个动态移位寄存器单元的输出信号作为后一个动态移位寄存器单元的输入信号;所述脉冲信号发生器,用于产生依次相差1/4周期相位的脉冲信号,依次作为每个动态移位寄存器单元的脉冲信号。The embodiment of the present invention also provides a dynamic shift register, including a pulse signal generator, and also includes N said dynamic shift register units, where N is a positive integer; the input end of the first dynamic shift register unit is connected to the input signal , the output signal of the previous dynamic shift register unit is used as the input signal of the latter dynamic shift register unit; Pulse signal for bit register unit.
优选地,包括四个所述动态移位寄存器单元,分别为第一动态移位寄存器单元,第二动态移位寄存器单元、第三动态移位寄存器单元和第四动态移位寄存器单元;Preferably, four dynamic shift register units are included, which are respectively a first dynamic shift register unit, a second dynamic shift register unit, a third dynamic shift register unit and a fourth dynamic shift register unit;
所述脉冲信号产生器,用于产生依次相差1/4周期相位的四个脉冲信号,分别是第一脉冲信号、第二脉冲信号、第三脉冲信号和第四脉冲信号;第一脉冲信号、第二脉冲信号、第三脉冲信号和第四脉冲信号分别作为第一动态移位寄存器单元,第二动态移位寄存器单元、第三动态移位寄存器单元和第四动态移位寄存器单元的脉冲信号;The pulse signal generator is used to generate four pulse signals with a phase difference of 1/4 cycle, which are respectively the first pulse signal, the second pulse signal, the third pulse signal and the fourth pulse signal; the first pulse signal, The second pulse signal, the third pulse signal and the fourth pulse signal are respectively used as the first dynamic shift register unit, the pulse signal of the second dynamic shift register unit, the third dynamic shift register unit and the fourth dynamic shift register unit ;
第一动态移位寄存器单元的输入端连接输入信号,输出端连接第二动态移位寄存器单元的输入端;The input end of the first dynamic shift register unit is connected to the input signal, and the output end is connected to the input end of the second dynamic shift register unit;
第二动态移位寄存器单元的输出端连接第三动态移位寄存器单元的输入端;The output end of the second dynamic shift register unit is connected to the input end of the third dynamic shift register unit;
第三动态移位寄存器单元的输出端连接第四动态移位寄存器单元的输入端;The output end of the third dynamic shift register unit is connected to the input end of the fourth dynamic shift register unit;
第四动态移位寄存器单元的输出端作为下一个动态移位寄存器的输入信号。The output terminal of the fourth dynamic shift register unit serves as the input signal of the next dynamic shift register.
本发明还提供一种动态移位寄存器单元,包括:第五PMOS管、第四PMOS管、第五PMOS管、第四NMOS管、第五NMOS管和第二电容;The present invention also provides a dynamic shift register unit, including: a fifth PMOS transistor, a fourth PMOS transistor, a fifth PMOS transistor, a fourth NMOS transistor, a fifth NMOS transistor, and a second capacitor;
所述第四PMOS管的栅极和第四NMOS管的栅极均连接输入信号;Both the gate of the fourth PMOS transistor and the gate of the fourth NMOS transistor are connected to the input signal;
所述第四PMOS管的漏极和第四NMOS管的漏极均连接第二节点;The drain of the fourth PMOS transistor and the drain of the fourth NMOS transistor are both connected to the second node;
所述第五PMOS管的源极连接电源,漏极连接第四PMOS管的源极,栅极连接输出端;The source of the fifth PMOS transistor is connected to the power supply, the drain is connected to the source of the fourth PMOS transistor, and the gate is connected to the output terminal;
所述第四NMOS管的源极接地;The source of the fourth NMOS transistor is grounded;
所述第二电容连接在电源和第二节点之间;The second capacitor is connected between the power supply and the second node;
所述第五PMOS管的栅极和第五NMOS管的栅极均连接第二节点;Both the gate of the fifth PMOS transistor and the gate of the fifth NMOS transistor are connected to the second node;
所述第五PMOS管的漏极和第五NMOS管的漏极均连接输出端;Both the drain of the fifth PMOS transistor and the drain of the fifth NMOS transistor are connected to the output terminal;
所述第五NMOS管的源极接地;所述第五PMOS管的源极接脉冲信号。The source of the fifth NMOS transistor is grounded; the source of the fifth PMOS transistor is connected to the pulse signal.
优选地,所述输入信号为高电平有效。Preferably, the input signal is active high.
本发明还提供一种动态移位寄存器,包括脉冲信号发生器,还包括N个所述动态移位寄存器单元,N为正整数;第一个动态移位寄存器单元的输入端连接输入信号,前一个动态移位寄存器单元的输出信号作为后一个动态移位寄存器单元的输入信号;所述脉冲信号发生器,用于产生依次相差1/4周期相位的脉冲信号,依次作为每个动态移位寄存器单元的脉冲信号。The present invention also provides a dynamic shift register, including a pulse signal generator, and also includes N said dynamic shift register units, where N is a positive integer; the input end of the first dynamic shift register unit is connected to the input signal, and the preceding The output signal of a dynamic shift register unit is used as the input signal of the latter dynamic shift register unit; the pulse signal generator is used to generate pulse signals with a phase difference of 1/4 cycle successively, as each dynamic shift register in turn Unit's pulse signal.
本发明实施例还提供一种动态移位寄存器,包括脉冲信号产生器,包括四个所述动态移位寄存器单元,分别为第一动态移位寄存器单元,第二动态移位寄存器单元、第三动态移位寄存器单元和第四动态移位寄存器单元;The embodiment of the present invention also provides a dynamic shift register, including a pulse signal generator, including four dynamic shift register units, respectively the first dynamic shift register unit, the second dynamic shift register unit, the third dynamic shift register unit, and the second dynamic shift register unit. a dynamic shift register unit and a fourth dynamic shift register unit;
所述脉冲信号产生器,用于产生依次相差1/4周期相位的四个脉冲信号,分别是第一脉冲信号、第二脉冲信号、第三脉冲信号和第四脉冲信号;第一脉冲信号、第二脉冲信号、第三脉冲信号和第四脉冲信号分别作为第一动态移位寄存器单元,第二动态移位寄存器单元、第三动态移位寄存器单元和第四动态移位寄存器单元的脉冲信号;The pulse signal generator is used to generate four pulse signals with a phase difference of 1/4 cycle, which are respectively the first pulse signal, the second pulse signal, the third pulse signal and the fourth pulse signal; the first pulse signal, The second pulse signal, the third pulse signal and the fourth pulse signal are respectively used as the first dynamic shift register unit, the pulse signal of the second dynamic shift register unit, the third dynamic shift register unit and the fourth dynamic shift register unit ;
第一动态移位寄存器单元的输入端连接输入信号,输出端连接第二动态移位寄存器单元的输入端;The input end of the first dynamic shift register unit is connected to the input signal, and the output end is connected to the input end of the second dynamic shift register unit;
第二动态移位寄存器单元的输出端连接第三动态移位寄存器单元的输入端;The output end of the second dynamic shift register unit is connected to the input end of the third dynamic shift register unit;
第三动态移位寄存器单元的输出端连接第四动态移位寄存器单元的输入端;The output end of the third dynamic shift register unit is connected to the input end of the fourth dynamic shift register unit;
第四动态移位寄存器单元的输出端作为下一个动态移位寄存器的输入信号。The output terminal of the fourth dynamic shift register unit serves as the input signal of the next dynamic shift register.
与现有技术相比,本发明具有以下优点:Compared with the prior art, the present invention has the following advantages:
本发明提供的动态移位寄存器单元及动态移位寄存器,采用五个MOS管和一个电容即可完成输入信号的移位,即输出端的输出信号在相位上比输入信号滞后1/4周期。该移位寄存器单元利用电容的存储功能,在脉冲信号的第三个1/4周期内,将脉冲信号的有效电平区间输出到输出端,因此,该移位寄存器属于利用电容的储存功能实现自反馈的动态移位寄存器。不同于现有技术中索尼公司的静态移位寄存器,主要是利用晶体管Qp12实现自反馈。由于索尼公司的静态移位寄存器利用的晶体管实现自反馈,造成晶体管较多,从而致使电路结构复杂。而本发明提供的动态移位寄存器利用电容即可实现自反馈,从而简化电路结构,节省版图面积。The dynamic shift register unit and the dynamic shift register provided by the present invention can complete the shift of the input signal by using five MOS transistors and one capacitor, that is, the output signal at the output terminal lags behind the input signal by 1/4 cycle in phase. The shift register unit uses the storage function of the capacitor to output the effective level interval of the pulse signal to the output terminal in the third 1/4 period of the pulse signal, so the shift register is realized by using the storage function of the capacitor Self-feedback dynamic shift register. Different from the static shift register of Sony Corporation in the prior art, the transistor Qp12 is mainly used to realize self-feedback. Since the transistors used in Sony's static shift register realize self-feedback, there are many transistors, which makes the circuit structure complex. However, the dynamic shift register provided by the present invention can realize self-feedback by using a capacitor, thereby simplifying the circuit structure and saving layout area.
附图说明 Description of drawings
图1是现有技术中的一款移位寄存器的电路图;Fig. 1 is a circuit diagram of a shift register in the prior art;
图2是图1中各个信号对应的波形图;Fig. 2 is a waveform diagram corresponding to each signal in Fig. 1;
图3是本发明提供的动态移位寄存器单元实施例一的电路图;Fig. 3 is a circuit diagram of Embodiment 1 of a dynamic shift register unit provided by the present invention;
图4是图3中各个信号对应的波形图;Fig. 4 is a waveform diagram corresponding to each signal in Fig. 3;
图5是本发明实施例提供的动态移位寄存器的示意图;5 is a schematic diagram of a dynamic shift register provided by an embodiment of the present invention;
图6是本发明图5所示的实施中各个信号对应的波形图;Fig. 6 is the waveform diagram corresponding to each signal in the implementation shown in Fig. 5 of the present invention;
图7是本发明提供的动态移位寄存器单元另一实施例的电路图;Fig. 7 is a circuit diagram of another embodiment of the dynamic shift register unit provided by the present invention;
图8是本发明图7所示的实施例中各个信号对应的波形图。FIG. 8 is a waveform diagram corresponding to each signal in the embodiment shown in FIG. 7 of the present invention.
具体实施方式 Detailed ways
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
参见图3,该图为本发明提供的动态移位寄存器单元实施例一的电路图。Refer to FIG. 3 , which is a circuit diagram of Embodiment 1 of the dynamic shift register unit provided by the present invention.
本实施例提供的动态移位寄存器单元,包括:第一PMOS管MP1、第二PMOS管MP2、第一NMOS管MN1、第二NMOS管MN2、第三NMOS管MN3和第一电容C1;The dynamic shift register unit provided in this embodiment includes: a first PMOS transistor MP1, a second PMOS transistor MP2, a first NMOS transistor MN1, a second NMOS transistor MN2, a third NMOS transistor MN3 and a first capacitor C1;
所述第一PMOS管MP1的栅极和第一NMOS管MN1的栅极均接输入信号IN;Both the gate of the first PMOS transistor MP1 and the gate of the first NMOS transistor MN1 are connected to the input signal IN;
所述第一PMOS管MP1的漏极和第一NMOS管MN1的漏极均连接第一节点N1;Both the drain of the first PMOS transistor MP1 and the drain of the first NMOS transistor MN1 are connected to the first node N1;
所述第一电容C1连接在所述第一节点N1和接地信号VEE之间;The first capacitor C1 is connected between the first node N1 and a ground signal VEE;
所述第一PMOS管MP1的源极和第二PMOS管MP2的源极均连接电源信号VDD;Both the source of the first PMOS transistor MP1 and the source of the second PMOS transistor MP2 are connected to the power signal VDD;
所述第一NMOS管MN1的源极连接第二NMOS管MN2的漏极,第二NMOS管MN2的源极连接接地信号VEE,第二NMOS管MN2的栅极连接输出端OUT;The source of the first NMOS transistor MN1 is connected to the drain of the second NMOS transistor MN2, the source of the second NMOS transistor MN2 is connected to the ground signal VEE, and the gate of the second NMOS transistor MN2 is connected to the output terminal OUT;
所述第二PMOS管MP2的栅极和第三NMOS管MN3的栅极均连接所述第一节点N1;Both the gate of the second PMOS transistor MP2 and the gate of the third NMOS transistor MN3 are connected to the first node N1;
所述第二PMOS管MP2的漏极和第三NMOS管MN3的漏极均连接输出端OUT;Both the drain of the second PMOS transistor MP2 and the drain of the third NMOS transistor MN3 are connected to the output terminal OUT;
所述第三NMOS管MN3的源极接脉冲信号CK。The source of the third NMOS transistor MN3 is connected to the pulse signal CK.
下面结合图3和图4详细介绍本实施例提供的动态移位寄存器单元的工作原理。参见图4,该图为图3中各个信号对应的波形图。The working principle of the dynamic shift register unit provided by this embodiment will be described in detail below with reference to FIG. 3 and FIG. 4 . Refer to FIG. 4 , which is a waveform diagram corresponding to each signal in FIG. 3 .
其中,脉冲信号CK是输入该移位寄存器单元的脉冲信号,在时间段T1内,脉冲信号CK为高电平,输入信号IN为低电平,因此,第一PMOS管MP1被打开,经过第一PMOS管MP1的源极,电源信号VDD被传递到第一PMOS管MP1的漏极,导致节点N1为高电平,节点N1的高电平被存储在第一电容C1中。并且同时使第三NMOS管MN3被打开,脉冲信号CK经过第三NMOS管MN3的源极传递至其漏极,即输出端OUT为高电平,从而导致第二NMOS管MN2被打开,第二NMOS管MN2源极的接地信号VEE被传递至其漏极,第二NMOS管MN2的漏极为低电平。其他晶体管均处于关断状态。Wherein, the pulse signal CK is a pulse signal input to the shift register unit. In the time period T1, the pulse signal CK is at a high level, and the input signal IN is at a low level. Therefore, the first PMOS transistor MP1 is turned on. A source of the PMOS transistor MP1, the power signal VDD is transmitted to the drain of the first PMOS transistor MP1, causing the node N1 to be at a high level, and the high level of the node N1 is stored in the first capacitor C1. And at the same time, the third NMOS transistor MN3 is turned on, and the pulse signal CK is transmitted to the drain through the source of the third NMOS transistor MN3, that is, the output terminal OUT is at a high level, thereby causing the second NMOS transistor MN2 to be turned on, and the second NMOS transistor MN2 to be turned on. The ground signal VEE of the source of the NMOS transistor MN2 is transmitted to its drain, and the drain of the second NMOS transistor MN2 is at a low level. All other transistors are off.
在时间段T2内,脉冲信号CK由高电平变为低电平,输入信号IN仍为低电平,节点N1仍为高电平,第三NMOS管MN3仍为打开状态,并将变成低电平的脉冲信号CK传递至输出端OUT,输出端OUT变为低电平。同时第二NMOS管MN2是断开状态的,第二NMOS管MN2的漏极电位为不确定状态,但是因为第一NMOS管MN1和第二NMOS管MN2均为断开状态,因此并不会对输出端OUT信号产生影响。In the time period T2, the pulse signal CK changes from high level to low level, the input signal IN is still low level, the node N1 is still high level, and the third NMOS transistor MN3 is still open and will become The low level pulse signal CK is transmitted to the output terminal OUT, and the output terminal OUT becomes low level. At the same time, the second NMOS transistor MN2 is in the off state, and the drain potential of the second NMOS transistor MN2 is in an indeterminate state, but because the first NMOS transistor MN1 and the second NMOS transistor MN2 are both in the off state, it does not affect The output OUT signal has an effect.
在时间段T3内,脉冲信号CK仍为低电平,输入信号IN变为高电平,第一PMOS管MP1被断开,第一NMOS管MN1导通,因为节点N1的高电平存储在第一电容C1中,所以MN3仍然被打开,输入端OUT端输出脉冲信号CK的低电平信号,从而导致第二NMOS管MN2断开。In the time period T3, the pulse signal CK is still at low level, the input signal IN becomes high level, the first PMOS transistor MP1 is turned off, and the first NMOS transistor MN1 is turned on, because the high level of the node N1 is stored in In the first capacitor C1, MN3 is still turned on, and the input terminal OUT outputs a low-level signal of the pulse signal CK, thereby causing the second NMOS transistor MN2 to be disconnected.
在时间段T4内,脉冲信号CK变为高电平,输入信号IN仍然为高电平,存储在第一电容C1中的高电平仍然作用于第三NMOS管MN3,第三NMOS管MN3打开,输出端OUT输出脉冲信号CK的高电平,从而导致第二NMOS管MN2打开。输入信号IN的高电平使第一NMOS管MN1持续打开,接地信号通过第二NMOS管MN2的源极、漏极和第一NMOS管MN1的源极、漏极传输至节点N1,节点N1被拉至低电位,从而打开第二PMOS管MP2,第二PMOS管MP2的源极所接的电源信号VDD被传递至输出端OUT,输出端OUT为高电平,从而完成一个自反馈的循环过程,输出端OUT保持为高电平。In the time period T4, the pulse signal CK becomes high level, the input signal IN is still high level, the high level stored in the first capacitor C1 still acts on the third NMOS transistor MN3, and the third NMOS transistor MN3 is turned on , the output terminal OUT outputs the high level of the pulse signal CK, thereby causing the second NMOS transistor MN2 to be turned on. The high level of the input signal IN makes the first NMOS transistor MN1 continuously open, and the ground signal is transmitted to the node N1 through the source and drain of the second NMOS transistor MN2 and the source and drain of the first NMOS transistor MN1, and the node N1 is Pull it to a low potential, thereby turning on the second PMOS transistor MP2, the power signal VDD connected to the source of the second PMOS transistor MP2 is transmitted to the output terminal OUT, and the output terminal OUT is at a high level, thereby completing a self-feedback cycle process , the output terminal OUT remains at a high level.
在时间段T5内,脉冲信号CK仍为高电平,输入信号IN为高电平,但因为仍然满足之间的自反馈条件,所以输出端OUT保持输出高电平。综上所述,该移位寄存器单元完成了一个周期内的移位,输出端OUT的输出信号比输入信号IN向后移位1/4个周期。从图4中可以明显看出各个信号之间的相位关系,可以看出输出端OUT的信号比输入信号IN的信号滞后1/4周期。During the time period T5, the pulse signal CK is still at a high level, and the input signal IN is at a high level, but because the self-feedback condition between them is still satisfied, the output terminal OUT keeps outputting a high level. To sum up, the shift register unit completes the shift within one cycle, and the output signal at the output terminal OUT is shifted backward by 1/4 cycle than the input signal IN. From Figure 4, we can clearly see the phase relationship between the various signals, and we can see that the signal at the output terminal OUT lags behind the signal at the input signal IN by 1/4 cycle.
本发明提供的动态移位寄存器单元,采用五个MOS管和一个电容C1即可完成输入信号IN的移位,即输出端OUT的输出信号在相位上比输入信号IN滞后1/4周期,该周期指的是脉冲信号CK的周期。该移位寄存器单元利用电容C1的存储功能,在脉冲信号CK的第三个1/4周期内,将脉冲信号CK的有效电平区间输出到输出端OUT,本发明提供的动态移位寄存器利用电容C1的存储功能即可实现自反馈,从而简化电路结构,节省版图面积。The dynamic shift register unit provided by the present invention can complete the shift of the input signal IN by using five MOS transistors and one capacitor C1, that is, the output signal of the output terminal OUT lags behind the input signal IN by 1/4 period in phase, and the The cycle refers to the cycle of the pulse signal CK. The shift register unit utilizes the storage function of the capacitor C1 to output the effective level interval of the pulse signal CK to the output terminal OUT in the third 1/4 period of the pulse signal CK. The dynamic shift register provided by the present invention utilizes The storage function of the capacitor C1 can realize self-feedback, thereby simplifying the circuit structure and saving the layout area.
本发明实施例还提供一种动态移位寄存器,以上实施例仅提供的是一个动态移位寄存器单元,如果需要完成一个完整周期的移位,则需要四个以上实施例所述的动态移位寄存器单元。下面结合附图介绍一个完整的动态移位寄存器。The embodiment of the present invention also provides a dynamic shift register. The above embodiments only provide a dynamic shift register unit. If a complete cycle of shifting needs to be completed, four dynamic shift registers described in the above embodiments are required. register unit. A complete dynamic shift register is introduced below in conjunction with the accompanying drawings.
参见图5,该图为本发明实施例提供的动态移位寄存器的示意图。Referring to FIG. 5 , this figure is a schematic diagram of a dynamic shift register provided by an embodiment of the present invention.
本实施例提供的动态移位寄存器,包括脉冲信号产生器G,还包括四个图3所示的动态移位寄存器单元,分别为第一动态移位寄存器单元A,第二动态移位寄存器单元B、第三动态移位寄存器单元C和第四动态移位寄存器单元D;The dynamic shift register provided by this embodiment includes a pulse signal generator G, and also includes four dynamic shift register units shown in Figure 3, which are respectively the first dynamic shift register unit A and the second dynamic shift register unit B, the third dynamic shift register unit C and the fourth dynamic shift register unit D;
脉冲信号产生器G,用于产生依次相差1/4周期相位的四个脉冲信号,分别是第一脉冲信号CK1、第二脉冲信号CK2、第三脉冲信号CK3和第四脉冲信号CK4;The pulse signal generator G is used to generate four pulse signals with a phase difference of 1/4 cycle in sequence, namely the first pulse signal CK1, the second pulse signal CK2, the third pulse signal CK3 and the fourth pulse signal CK4;
第一脉冲信号CK1、第二脉冲信号CK2、第三脉冲信号CK3和第四脉冲信号CK4分别作为第一动态移位寄存器单元A,第二动态移位寄存器单元B、第三动态移位寄存器单元C和第四动态移位寄存器单元D的脉冲信号;The first pulse signal CK1, the second pulse signal CK2, the third pulse signal CK3 and the fourth pulse signal CK4 respectively serve as the first dynamic shift register unit A, the second dynamic shift register unit B, and the third dynamic shift register unit C and the pulse signal of the fourth dynamic shift register unit D;
第一动态移位寄存器单元A的输入端连接输入信号IN,输出端OUT1连接第二动态移位寄存器单元的输入端;The input terminal of the first dynamic shift register unit A is connected to the input signal IN, and the output terminal OUT1 is connected to the input terminal of the second dynamic shift register unit;
第二动态移位寄存器单元B的输出端OUT2连接第三动态移位寄存器单元C的输入端;The output terminal OUT2 of the second dynamic shift register unit B is connected to the input terminal of the third dynamic shift register unit C;
第三动态移位寄存器单元C的输出端OUT3连接第四动态移位寄存器单元D的输入端;The output terminal OUT3 of the third dynamic shift register unit C is connected to the input terminal of the fourth dynamic shift register unit D;
第四动态移位寄存器单元D的输出端OUT4作为下一个动态移位寄存器的输入信号。The output terminal OUT4 of the fourth dynamic shift register unit D serves as the input signal of the next dynamic shift register.
参见图6,该图为图5中各个信号的波形图。Refer to FIG. 6 , which is a waveform diagram of each signal in FIG. 5 .
从图6中可以看出,OUT1比IN移位1/4个周期,OUT2比IN移位2/4个周期,OUT3比IN移位3/4个周期,OUT4比IN移位一个周期。It can be seen from Figure 6 that OUT1 is shifted by 1/4 cycle than IN, OUT2 is shifted by 2/4 cycle than IN, OUT3 is shifted by 3/4 cycle than IN, and OUT4 is shifted by one cycle than IN.
可以理解的是,由N个图3所示的动态移位寄存器单元均可以构成一个动态移位寄存器,N为正整数。例如,这种动态移位寄存器包括脉冲信号发生器,还包括N个图3所示的动态移位寄存器单元;第一个动态移位寄存器单元的输入端连接输入信号,前一个动态移位寄存器单元的输出信号作为后一个动态移位寄存器单元的输入信号;所述脉冲信号发生器,用于产生依次相差1/4周期相位的脉冲信号,依次作为每个动态移位寄存器单元的脉冲信号。需要说明的是,图5所示的仅是一个完整的动态移位寄存器,其能完成一个完整周期内的移位。如果显示器面板中需要扫描的行数恰好是4的正整数倍,则需要整数个这样的动态移位寄存器即可,例如,需要扫描的行数恰好是200行,则需要50个这样的动态移位寄存器。如果显示器面板中需要扫描的行数不是4的正整数倍,例如需要扫描的行数是202行,则需要50个这样的动态移位寄存器后,另外还单独需要2个如图3所示的动态移位寄存器单元。It can be understood that a dynamic shift register can be formed by N dynamic shift register units shown in FIG. 3 , and N is a positive integer. For example, this dynamic shift register includes a pulse signal generator, and also includes N dynamic shift register units shown in Figure 3; the input end of the first dynamic shift register unit is connected to the input signal, and the first dynamic shift register unit The output signal of the unit is used as the input signal of the next dynamic shift register unit; the pulse signal generator is used to generate pulse signals with a phase difference of 1/4 cycle sequentially as the pulse signal of each dynamic shift register unit. It should be noted that what is shown in FIG. 5 is only a complete dynamic shift register, which can complete a shift within a complete cycle. If the number of lines to be scanned in the display panel is exactly a positive integer multiple of 4, an integer number of such dynamic shift registers is required. For example, if the number of lines to be scanned is exactly 200 lines, 50 such dynamic shift registers are required. bit register. If the number of lines to be scanned in the display panel is not a positive integer multiple of 4, for example, the number of lines to be scanned is 202 lines, then 50 such dynamic shift registers are needed, and 2 additional shift registers are required separately as shown in Figure 3 Dynamic shift register unit.
需要说明的是,以上实施例中的动态移位寄存器单元是以低电平作为有效信号,此处的低电平有效指的是输入信号IN为低电平时,触发图3所示的动态移位寄存器单元开始工作,从而在一个脉冲信号CK的周期T内,将输入信号IN向后移位1/4周期,输出端OUT输出移位后的信号。下面介绍本发明实施例提供的另一种动态移位寄存器单元,是以高电平作为有效信号的,此处的高电平有效指的是输入信号IN为高电平时,触发图7所示的动态移位寄存器单元开始工作,从而在脉冲信号CK的一个周期T内,将输入信号IN向后移位1/4周期,输出端OUT输出移位后的信号。It should be noted that the dynamic shift register unit in the above embodiments uses a low level as an effective signal. The low level active here means that when the input signal IN is at a low level, the dynamic shift register shown in FIG. 3 is triggered. The bit register unit starts to work, so that within a period T of a pulse signal CK, the input signal IN is shifted backward by 1/4 period, and the output terminal OUT outputs the shifted signal. The following introduces another dynamic shift register unit provided by the embodiment of the present invention, which uses a high level as an effective signal. The high level active here means that when the input signal IN is at a high level, the trigger shown in Figure 7 The dynamic shift register unit starts to work, so that within one period T of the pulse signal CK, the input signal IN is shifted backward by 1/4 period, and the output terminal OUT outputs the shifted signal.
参见图7,该图为本发明提供的动态移位寄存器单元的另一实施例电路图。Referring to FIG. 7 , this figure is a circuit diagram of another embodiment of the dynamic shift register unit provided by the present invention.
本实施例提供的动态移位寄存器单元,包括:第三PMOS管MP3、第四PMOS管MP4、第五PMOS管MP5、第四NMOS管MN4、第五NMOS管MN5和第二电容C2;The dynamic shift register unit provided in this embodiment includes: a third PMOS transistor MP3, a fourth PMOS transistor MP4, a fifth PMOS transistor MP5, a fourth NMOS transistor MN4, a fifth NMOS transistor MN5, and a second capacitor C2;
所述第四PMOS管MP4的栅极和第四NMOS管MN4的栅极均连接输入信号IN;Both the gate of the fourth PMOS transistor MP4 and the gate of the fourth NMOS transistor MN4 are connected to the input signal IN;
所述第四PMOS管MP4的漏极和第四NMOS管MN4的漏极均连接第二节点N2;Both the drain of the fourth PMOS transistor MP4 and the drain of the fourth NMOS transistor MN4 are connected to the second node N2;
所述第三PMOS管MP3的源极连接电源VDD,漏极连接第四PMOS管MP4的源极,栅极连接输出端OUT;The source of the third PMOS transistor MP3 is connected to the power supply VDD, the drain is connected to the source of the fourth PMOS transistor MP4, and the gate is connected to the output terminal OUT;
所述第四NMOS管MN4的源极接地VEE;The source of the fourth NMOS transistor MN4 is grounded VEE;
所述第二电容C2连接在电源VDD和第二节点N2之间;The second capacitor C2 is connected between the power supply VDD and the second node N2;
所述第五PMOS管MP5的栅极和第五NMOS管MN5的栅极均连接第二节点N2;Both the gate of the fifth PMOS transistor MP5 and the gate of the fifth NMOS transistor MN5 are connected to the second node N2;
所述第五PMOS管MP5的漏极和第五NMOS管MN5的漏极均连接输出端OUT;Both the drain of the fifth PMOS transistor MP5 and the drain of the fifth NMOS transistor MN5 are connected to the output terminal OUT;
所述第五NMOS管MN5的源极接地VEE;所述第五PMOS管MP5的源极接脉冲信号CK。The source of the fifth NMOS transistor MN5 is grounded VEE; the source of the fifth PMOS transistor MP5 is connected to the pulse signal CK.
可以理解的是,本实施例提供的动态移位寄存器的工作原理与图3的类似,在此不再赘述,从图8所示的波形图中可以看出,输出端OUT的信号比输入信号IN移位1/4个周期。It can be understood that the working principle of the dynamic shift register provided in this embodiment is similar to that in FIG. 3 , and will not be repeated here. From the waveform diagram shown in FIG. IN is shifted by 1/4 cycle.
需要说明的是,图7所示的动态移位寄存器单元也可以连接为图5形式的动态移位寄存器,其工作原理类似,在此不再赘述。It should be noted that the dynamic shift register unit shown in FIG. 7 can also be connected as a dynamic shift register in the form of FIG. 5 , and its working principle is similar, which will not be repeated here.
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制。虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明。任何熟悉本领域的技术人员,在不脱离本发明技术方案范围情况下,都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化及修饰,均仍属于本发明技术方案保护的范围内。The above descriptions are only preferred embodiments of the present invention, and do not limit the present invention in any form. Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person familiar with the art, without departing from the scope of the technical solution of the present invention, can use the methods and technical content disclosed above to make many possible changes and modifications to the technical solution of the present invention, or modify it into an equivalent of equivalent change Example. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention, which do not deviate from the technical solution of the present invention, still fall within the protection scope of the technical solution of the present invention.
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CN105741749A (en) * | 2014-12-08 | 2016-07-06 | 上海和辉光电有限公司 | Light-emitting control signal drive circuit and active matrix-type display panel |
CN105679238A (en) * | 2016-01-05 | 2016-06-15 | 京东方科技集团股份有限公司 | Shift register circuit, driving method, array substrate and display device thereof |
CN105679238B (en) * | 2016-01-05 | 2018-06-29 | 京东方科技集团股份有限公司 | Shift-register circuit and its driving method, array substrate, display device |
CN105810142A (en) * | 2016-05-20 | 2016-07-27 | 上海天马有机发光显示技术有限公司 | Shift register unit and driving method thereof, shift register circuit and display device |
CN105810142B (en) * | 2016-05-20 | 2019-09-27 | 上海天马有机发光显示技术有限公司 | Shifting deposit unit and its driving method, shift-register circuit, display device |
CN108111161A (en) * | 2017-12-29 | 2018-06-01 | 中航(重庆)微电子有限公司 | A kind of quasi-static dynamic shift register and infrared focal plane array reading circuit |
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