CN102457226B - 57GHz voltage-controlled oscillator for millimeter wave communication - Google Patents

Abstract

The invention relates to a 57GHz voltage-controlled oscillator for millimeter wave communication, comprising: a resonant circuit for determining the oscillation frequency; a negative resistance generating circuit for generating and offsetting resistive components in the resonant circuit; an output matching circuit for to match the output impedance to 50 ohms. The invention has a simple structure, the resonant circuit determines the size of the output frequency, the negative resistance generated by the negative resistance generating circuit offsets the positive resistance of the resonant circuit to generate resonance, the output matching circuit realizes power matching, and finally realizes the frequency range of 56.6-57.3GHz The signal output meets the needs of the 60GHz millimeter-wave frequency band double-conversion wireless transceiver, and provides the local oscillator signal for the millimeter-wave wireless transceiver, thereby completing the up-conversion and down-conversion of the signal.

Description

A 57GHz Voltage Controlled Oscillator for Millimeter Wave Communication

technical field

The invention relates to the field of 60GHz millimeter wave technology applied to a new generation of ultra-high-speed wireless personal area network WPAN (Wireless Personal Area Network), in particular to a 57GHz voltage-controlled oscillator for millimeter wave communication.

Background technique

With its high transmission rate of 4Gbps and bandwidth of 5GHz, 60GHz millimeter-wave wireless communication has become the preferred technology for the next generation of ultra-high-speed wireless personal area network, especially in the field of consumer electronics such as uncompressed high-definition video wireless transmission, which has a huge market prospect. 60GHz technology has become an international research hotspot, and China has opened the 59-64GHz frequency band.

The advantage of 60GHz wireless communication is that it can realize the transmission rate up to the order of Gbps. This technology will become the mainstream technology of ultra-high-speed wireless personal area network. Currently NEC, Samsung, Panasonic and LG and other consumer electronics manufacturers have jointly established the WirelessHD Alliance to promote the application of 60GHz technology in uncompressed high-definition video transmission, which shows its huge market potential. At present, 60GHz technology has become the focus of academic and industrial circles in the world. The International Solid State Circuits Conference (International Solid State Circuits Conference) sets up special topics every year to collect papers related to 60GHz technology. Difficulties in design and testing of 60GHz millimeter wave circuits are subject to extensive attention. At present, the 60GHz spectrum in China has been opened, but due to the high technical difficulty, there are relatively few application studies on this frequency band. As the "heart" of the entire wireless transceiver, the voltage-controlled oscillator has an important performance index for the overall transceiver performance. Influence.

Contents of the invention

The problem to be solved by the present invention is to provide a 57GHz voltage-controlled oscillator for millimeter wave communication, to meet the needs of the 60GHz millimeter wave frequency band double frequency conversion wireless transceiver, to provide the local oscillator signal for the millimeter wave wireless transceiver, thereby completing the signal The up-conversion and down-conversion frequency, its frequency coverage is 56.6-57.3GHz.

In order to achieve the above object, the technical solution adopted in the present invention is: a 57GHz voltage-controlled oscillator for millimeter wave communication, comprising:

a resonant circuit for determining the frequency of oscillation;

Negative resistance generating circuit, used to generate and offset the resistive component in the resonant circuit;

Output matching circuit for matching the output impedance to 50 ohms.

In the above solution, the resonant circuit is connected to the negative resistance generating circuit through a first DC blocking capacitor, the negative resistance generating circuit is connected to the output matching circuit through a second DC blocking capacitor, and the output matching circuit One end of the 50-ohm load is connected, and the other end of the 50-ohm load is connected to the ground.

In the above scheme, the resonant tank includes a first pHEMT transistor, a first microstrip transmission line and a second microstrip transmission line; the source and drain of the first pHEMT transistor are short-circuited and connected to one end of the first microstrip transmission line connected, the other end of the first microstrip transmission line is connected to a -3.3-3.0V adjustable DC power supply; the gate of the first pHEMT transistor is connected to a section of the second microstrip transmission line, and the second microstrip transmission line The other end is connected to a -3.3-3.0V adjustable DC power supply; the source and drain of the first pHEMT transistor are short-circuited, and connected to the negative resistance generating circuit through the first DC blocking capacitor.

In the above scheme, the first pHEMT transistor is a diode-connected pHEMT transistor with a gate length L of 0.15 microns and a gate width W of 80 microns; the first microstrip transmission line and the second microstrip transmission line have a width W of A microstrip transmission line equivalent to an inductance of 15 microns and a length L of 360 microns.

In the above solution, the negative resistance generation circuit includes a second pHEMT transistor, the drain of the second pHEMT transistor is connected to one end of the third microstrip transmission line, and the other end of the third microstrip transmission line is connected to a 3.3V DC power supply connected; the drain of the second pHEMT transistor is connected to the output matching circuit through the second DC blocking capacitor; the source of the second pHEMT transistor is connected to one end of the fourth microstrip transmission line, and the fourth microstrip transmission line The other end of the pHEMT transistor is connected to the ground; the gate of the second pHEMT transistor is connected to one end of the fifth microstrip transmission line, and the other end of the fifth microstrip transmission line is connected to one end of the sixth microstrip transmission line and the seventh microstrip transmission line respectively. One end is connected; the other end of the sixth microstrip transmission line is connected to a 0.3V DC power supply, and the other end of the seventh microstrip transmission line is connected to a resonant circuit through a first DC blocking capacitor.

In the above solution, the second pHEMT transistor is a transistor with a gate length L of 0.15 microns and a gate width W of 100 microns; the third microstrip transmission line is a microstrip with a width W of 15 microns and a length L of 420 microns Transmission line; the fourth microstrip transmission line is a microstrip transmission line with a width W of 40 microns and a length L of 410 microns; the fifth microstrip transmission line is a microstrip with a width W of 15 microns and a length L of 450 microns Transmission line; the sixth microstrip transmission line is a microstrip transmission line with a width W of 15 microns and a length L of 430 microns; the seventh microstrip transmission line is a microstrip with a width W of 15 microns and a length L of 120 microns Transmission line.

In the above solution, the output matching circuit includes an eighth microstrip transmission line, a ninth microstrip transmission line, and a tenth microstrip transmission line; one end of the eighth microstrip transmission line is connected to the negative resistance generation circuit through a second DC blocking capacitor , the other end of the eighth microstrip transmission line is connected to one end of the ninth microstrip transmission line and one end of the tenth microstrip transmission line respectively; the other end of the ninth microstrip transmission line is suspended, and the tenth microstrip transmission line Connect the other end to a 50 ohm load.

In the above solution, the eighth microstrip transmission line is a microstrip transmission line with a width W of 30 micrometers and a length L of 200 micrometers, and the ninth microstrip transmission line is a section of microstrip transmission line with a width W of 40 micrometers and a length L of 250 micrometers A microstrip transmission line, the tenth microstrip transmission line is a microstrip transmission line with a width W of 30 microns and a length L of 20 microns.

In the above solution, the capacitance of the first DC blocking capacitor is 3.3pF, and the capacitance of the second DC blocking capacitor is 0.18pF.

Compared with the prior art, the beneficial effects produced by the technical solution adopted in the present invention are as follows:

The invention has a simple structure, the resonant circuit determines the size of the output frequency, the negative resistance generated by the negative resistance generating circuit offsets the positive resistance of the resonant circuit to generate resonance, the output matching circuit realizes power matching, and finally realizes the frequency range of 56.6-57.3GHz signal output.

Description of drawings

FIG. 1 is a schematic circuit diagram of a 57 GHz voltage-controlled oscillator for millimeter wave communication provided by an embodiment of the present invention.

Detailed ways

The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

As shown in FIG. 1 , the present invention provides a 57GHz voltage-controlled oscillator for millimeter wave communication, including a resonant tank 1 , a negative resistance generating circuit 2 and an output matching circuit 3 .

The resonant circuit 1 is used to determine the oscillation frequency. The resonant tank 1 includes a diode-connected first pHEMT transistor 101 with a gate length L of 0.15 microns and a gate width W of 80 microns, and a first microstrip equivalent to an inductance with a width W of 15 microns and a length L of 360 microns transmission line 102 and a second microstrip transmission line 103 . The source and drain of the first pHEMT transistor 101 are short-circuited and connected to one end of the first microstrip transmission line 102, and the other end of the first microstrip transmission line 102 is connected to a -3.3-3.0V adjustable DC power supply; the first pHEMT transistor The gate of 101 is connected to a section of the second microstrip transmission line 103, and the other end of the second microstrip transmission line 103 is connected to a -3.3-3.0V adjustable DC power supply; the source and drain of the first pHEMT transistor 101 are short-circuited, and It is connected to the negative resistance generating circuit 2 through the first DC blocking capacitor 201 of 3.3pF.

Resonant circuit 1 uses the first pHEMT transistor 101 with source-drain short-circuited as a varactor, and its capacitance is changed by changing the voltage of the gate terminal and the short-circuited source-drain terminal to achieve frequency tuning. The entire resonant circuit uses two 1 The microstrip line of the /4 wavelength line is used as an inductance, and a voltage is applied at both ends to control the oscillation frequency of the entire VCO. The capacitance of the varactor can be controlled by two voltages to increase its tuning range. The entire resonant circuit is equivalent to a parallel connection. Resonant, where both tuning voltages range from -3.3V to 3.3V.

The negative resistance generating circuit 2 is used to generate and cancel the resistive component in the resonant tank. The negative resistance generating circuit 2 includes a second pHEMT transistor 203, the drain of the second pHEMT transistor 203 is connected to one end of the third microstrip transmission line 204, and the other end of the third microstrip transmission line 204 is connected to a 3.3V DC power supply. The drain of the second pHEMT transistor 203 is connected to the output matching circuit 3 through the second DC blocking capacitor 202 of 0.18pF; the source of the second pHEMT transistor 203 is connected to one end of the fourth microstrip transmission line 205, and the fourth microstrip transmission line 205 The other end of the second pHEMT transistor 203 is connected to one end of the fifth microstrip transmission line 206, and the other end of the fifth microstrip transmission line 206 is connected to one end of the sixth microstrip transmission line 207 and the seventh microstrip transmission line respectively. One end of the transmission line 208 is connected. The other end of the sixth microstrip transmission line 207 is connected to a 0.3V DC power supply, and the other end of the seventh microstrip transmission line 208 is connected to the resonant circuit 1 through a first DC blocking capacitor 201 of 3.3pF.

The second pHEMT transistor 203 is a transistor with a gate length L of 0.15 microns and a gate width W of 100 microns; the third microstrip transmission line 204 is a microstrip transmission line with a width W of 15 microns and a length L of 420 microns; The fourth microstrip transmission line 205 is a microstrip transmission line with a width W of 40 microns and a length L of 410 microns; the fifth microstrip transmission line 206 is a microstrip transmission line with a width W of 15 microns and a length L of 450 microns; The sixth microstrip transmission line 207 is a microstrip transmission line with a width W of 15 microns and a length L of 430 microns; the seventh microstrip transmission line 208 is a microstrip with a width W of 15 microns and a length L of 120 microns Transmission line.

The negative resistance generation circuit adopts the second pHEMT transistor 203 and connects the microstrip transmission line in series at its gate, source and drain to generate negative resistance, wherein the fourth microstrip transmission line 205 connected to the source level can be equivalent to The inductor generates negative feedback, and negative resistance is generated at both the gate and the drain, wherein the drain of the second pHEMT transistor 203 needs 3.3V power supply, and the gate needs 0.3V power supply. The negative resistance generation circuit forms a negative resistance at the input terminal of the gate through source feedback to offset the resistance in the resonant tank to form an oscillation.

The output matching circuit 3 is used to match the output impedance to 50 ohms. The output matching circuit 3 includes an eighth microstrip transmission line 301 , a ninth microstrip transmission line 302 and a tenth microstrip transmission line 303 . One end of the eighth microstrip transmission line 301 is connected to the negative resistance generating circuit 2 through the second DC blocking capacitor 202 of 0.18pF. The other end of the eighth microstrip transmission line 301 is connected to one end of the ninth microstrip transmission line 302 and one end of the tenth microstrip transmission line 303 respectively; the other end of the ninth microstrip transmission line 302 is suspended, and the other end of the tenth microstrip transmission line 303 Connect to a 50 ohm load.

The eighth microstrip transmission line 301 is a microstrip transmission line with a width W of 30 microns and a length L of 200 microns. The ninth microstrip transmission line 302 is a microstrip transmission line with a width W of 40 microns and a length L of 250 microns. The microstrip transmission line 303 is a microstrip transmission line with a width W of 30 microns and a length L of 20 microns.

The output matching circuit 3 adopts a π-shaped output matching network structure, which converts the negative resistance impedance of the output terminal of the second pHEMT transistor 203 into a 50 ohm resistance to achieve 50 ohm matching at the output port, and the output matching network realizes the maximum transmission of output power .

The above resonant circuit 1, negative resistance generating circuit 2 and output matching circuit 3 jointly constitute the overall structure of the voltage controlled oscillator provided by the present invention, the resonant circuit determines the size of the output frequency, and the negative rent generated by the negative resistance generating circuit offsets the resonance The positive resistance of the loop thus generates resonance, the output matching circuit realizes power matching, and finally realizes the signal output in the frequency range of 56.6-57.3GHz.

The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (7)

1. A 57GHz voltage-controlled oscillator for millimeter wave communication, characterized in that, comprising: a resonant circuit for determining the frequency of oscillation; a negative resistance generating circuit for generating a negative resistance that offsets the resistive component in the resonant circuit; an output matching circuit for matching the output impedance to 50 ohms; Wherein, the resonant circuit is connected to the negative resistance generating circuit through the first DC blocking capacitor, the negative resistance generating circuit is connected to the output matching circuit through the second DC blocking capacitor, and the output matching circuit is connected to the 50 One end of the ohm load is connected, and the other end of the 50 ohm load is connected to the ground; The resonant tank includes a first pHEMT transistor, a first microstrip transmission line and a second microstrip transmission line; the source and drain of the first pHEMT transistor are short-circuited and connected to one end of the first microstrip transmission line, the The other end of the first microstrip transmission line is connected to a -3.3-3.0V adjustable DC power supply; the gate of the first pHEMT transistor is connected to one end of the second microstrip transmission line, and the other end of the second microstrip transmission line is connected to - 3.3-3.0V adjustable DC power supply; the source and drain of the first pHEMT transistor are short-circuited, and connected to the negative resistance generating circuit through the first DC blocking capacitor. 2. The 57GHz voltage-controlled oscillator for millimeter wave communication according to claim 1, characterized in that: the first pHEMT transistor is a diode connection with a gate length L of 0.15 microns and a gate width W of 80 microns pHEMT transistor; the first microstrip transmission line and the second microstrip transmission line are microstrip transmission lines equivalent to inductance with a width W of 15 microns and a length L of 360 microns. 3. The 57GHz voltage-controlled oscillator for millimeter wave communication according to claim 1, characterized in that: the negative resistance generating circuit comprises a second pHEMT transistor, the drain of the second pHEMT transistor is connected to a third micro One end of the strip transmission line, the other end of the third microstrip transmission line is connected to a 3.3V DC power supply; the drain of the second pHEMT transistor is connected to the output matching circuit through a second DC blocking capacitor; the second The source of the pHEMT transistor is connected to one end of the fourth microstrip transmission line, and the other end of the fourth microstrip transmission line is connected to the ground; the gate of the second pHEMT transistor is connected to one end of the fifth microstrip transmission line, and the fifth microstrip transmission line The other end of the strip transmission line is connected to one end of the sixth microstrip transmission line and one end of the seventh microstrip transmission line respectively; the other end of the sixth microstrip transmission line is connected to a 0.3V DC power supply, and the other end of the seventh microstrip transmission line One end is connected to the resonant circuit through the first DC blocking capacitor. 4. The 57GHz voltage-controlled oscillator for millimeter wave communication according to claim 3, characterized in that: the second pHEMT transistor is a transistor with a gate length L of 0.15 microns and a gate width W of 100 microns; The third microstrip transmission line is a microstrip transmission line with a width W of 15 microns and a length L of 420 microns; the fourth microstrip transmission line is a microstrip transmission line with a width W of 40 microns and a length L of 410 microns; the fifth The microstrip transmission line is a microstrip transmission line with a width W of 15 microns and a length L of 450 microns; the sixth microstrip transmission line is a microstrip transmission line with a width W of 15 microns and a length L of 430 microns; the seventh microstrip The transmission line is a microstrip transmission line with a width W of 15 microns and a length L of 120 microns. 5. The 57GHz voltage-controlled oscillator for millimeter wave communication according to claim 1, wherein the output matching circuit comprises an eighth microstrip transmission line, a ninth microstrip transmission line and a tenth microstrip transmission line; One end of the eighth microstrip transmission line is connected to the negative resistance generating circuit through the second DC blocking capacitor, and the other end of the eighth microstrip transmission line is respectively connected to one end of the ninth microstrip transmission line and one end of the tenth microstrip transmission line ; The other end of the ninth microstrip transmission line is suspended, and the other end of the tenth microstrip transmission line is connected to a 50 ohm load. 6. The 57GHz voltage-controlled oscillator for millimeter wave communication according to claim 5, wherein the eighth microstrip transmission line is a microstrip transmission line with a width W of 30 microns and a length L of 200 microns, The ninth microstrip transmission line is a microstrip transmission line with a width W of 40 microns and a length L of 250 microns, and the tenth microstrip transmission line is a microstrip transmission line with a width W of 30 microns and a length L of 20 microns. 7. The 57GHz voltage controlled oscillator for millimeter wave communication according to any one of claims 1 to 5, characterized in that: the capacitance of the first DC blocking capacitor is 3.3pF, and the second DC blocking capacitor The capacitance of the capacitor is 0.18pF.