CN102457053A - Electrostatic discharge protection device applicable to multi-voltage system - Google Patents
Electrostatic discharge protection device applicable to multi-voltage system Download PDFInfo
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Abstract
The invention discloses an electrostatic discharge protection device applicable to a multi-voltage system. The electrostatic discharge protection device comprises a first circuit block, a second circuit block, a first power clamping circuit and a second power clamping circuit, wherein the first circuit block and the second circuit block are respectively operated at a first power voltage and a second power voltage; the second power voltage is greater than the first power voltage; the first power clamping circuit is coupled to the first circuit block, and has a breakdown voltage between the first power voltage and the second power voltage and a holding voltage which is greater than or equal to the first power voltage; the second power clamping circuit is cascaded with the first power clamping circuit and coupled to the second circuit block; the sum of the breakdown voltages of the first power clamping circuit and the second power clamping circuit is greater than the second power voltage; and the sum of the holding voltages of the first power clamping circuit and the second power clamping circuit is greater than or equal to the second power voltage.
Description
Technical field
The present invention is meant a kind of electrostatic discharge protective equipment that is used for a multivoltage system, refers to a kind of through repeatedly connecing the electrostatic discharge protective equipment that multistage low pressure or middle voltage source strangulation assembly increase conducting efficient and reduce circuit area especially.
Background technology
Along with scientific and technological progress, integrated circuit processing technique also constantly progresses greatly thereupon.Such as the technical staff of integrated circuit fields knowledge; But various electronic circuit aggregations/form on the chip; And in order to make chip can receive extraneous voltage source (for example grid bias power supply), and can with extraneous other circuit/chip swap data, can be provided with the connection pad (pad) of conduction on the chip.For example, in order to transmit bias voltage, can be provided with power supply connection pad (power pad) on the chip.In addition, on chip, also be provided with signal bonding pad (signal pad), i.e. I/o pad (I/O pad) is in order to receiving inputted signal and/or send the output signal.
The connection pad of these conductions can make chip be able to be connected with extraneous other circuit/chip.Yet; When chip encapsulation, test, transportation, processing, etc. in the process; These connection pads also are easy to because contact with the static power supply in the external world, and the improper electric power of static is conducted to chip internal, and and then cause the damage of chip internal circuit; This phenomenon be so-called static discharge (Electro-Static Discharge, ESD).Therefore, be used for protecting integrated circuit to avoid the ESD protection circuit of damage of electrostatic discharge (ESDprotection circuit), also therefore become more important along with improving of integrated circuit technology.
Usually between each connection pad of chip, can be provided with ESD protection circuit.The basic function of this ESD protection circuit is; When between two connection pads of chip during false touch static power supply; ESD protection circuit can be between two connection pads low-impedance current path of conducting, make the electric current of static power supply discharge can be preferentially from then on a current path flow through and can not flow into other internal circuit of chip; So, just can protect other internal circuit in the chip not receive electrostatic discharge effect or owing to a large amount of static discharge current (ESDcurrent) causes damaging.
See also Fig. 1, Fig. 1 is for having the sketch map of the integrated circuit 100 of ESD protection circuit in the known technology.As shown in Figure 1, integrated circuit 100 comprises the first power supply connection pad 101, second source connection pad 102, signal bonding pad 103, internal circuit (internal circuit) 110, two diodes (diode) 121,122 and power supply strangulation (power clamp) circuit 130.Power supply clamped circuit 130 is as the esd protection circuit between the first power supply connection pad 101 (VDD) and the second source connection pad 102 (VSS).In addition, in Fig. 1, diode 121 is in order to forming esd protection circuit between the signal bonding pad 103 and the first power supply connection pad 101, and diode 122 is used for being formed on the esd protection circuit between signal bonding pad 103 and the second source connection pad 102.
Wherein, Power supply clamped circuit 130 comprises N type metal oxide semiconductor (metal oxide semiconductor, MOS) the P-type mos transistor 134 of a transistor 132 and gate power supply (gate-powered) of a gate ground connection (gate-grounded).In known technology, power supply clamped circuit 130 also can only use N type metal oxide semiconductor transistor 132 or the grid of grounded-grid to connect the P-type mos transistor 134 both one of them of electricity, or uses the two to implement simultaneously.
Yet; In the integrated circuit of multi-power supply system; Particularly in the incomplete same system of voltage; For example 5 volts/12 volts/32 volts application usually need use ESD protection circuit to hold dissipation so that static is led respectively in the power-supply system of IC interior pastly, and this kind conventional architectures not only consumes and lacks effective guiding path between area and each power-supply system.
For instance, please refer to Fig. 2, Fig. 2 is the configuration diagram that becomes known for an ESD protection circuit 200 of multi-power supply system.In Fig. 2, integrated circuit has three groups of different power-supply systems, and respectively with power supply connection pad 201,202,203, and corresponding ground termination pad HVG, MVG, LVG represent.Under this situation, ESD protection circuit 200 comprises three groups of power supply clamped circuits 21,22,23, to power supply connection pad 201,202,203 and corresponding ground termination pad HVG, MVG, LVG electrostatic discharge (ESD) protection is provided respectively.In addition, stride the coupling noise between power pack, need between the ground end of three groups of power-supply systems to be connected through ground end obstruct assembly GC1, GC2 for isolated.Ground end intercept assembly GC1, GC2 can be intercept resistance (blocking resistance) but or the serial connection diode of two-way admittance (bi-directional diode strings), be that this area tool knows that usually the knowledgeable knows, do not add to give unnecessary details in this.
When high voltage source connection pad 201 is subjected to static; And need be from low-tension supply connection pad 203 discharge the time; Electrostatic discharging path can be from high voltage source connection pad 201 through power supply clamped circuit 21 conductings to high pressure ground termination pad HVG; Termination pad HVG intercepts assembly GC1, GC2 conducting to low pressure ground termination pad LVG through ground end from high pressure ground again, and is last, again from low pressure ground termination pad LVG conducting to low-tension supply connection pad 203.With regard to ordinary circumstance, high voltage source clamped circuit 21 is made up of high potential assembly, and higher because of its conducting voltage, the conducting resistance is bigger, and the electrostatic discharging path that is in addition produced is longer, causes conducting efficient comparatively not good.Therefore, the electrostatic discharge protective circuit of high pressure under identical antistatic capacity requires, needs bigger area.
On the other hand, on traditional design, may add a diode between low voltage electric power system and the high voltage power supply, so that the low voltage electric power system path that past high voltage power supply is led off when static takes place, diode D3, D4 as shown in Figure 2 to be provided.Under this situation; When integrated circuit when beginning to be powered; If supply low-tension supply earlier; Then middle voltage source system is in floating (floating), very easily causes from low-tension supply connection pad 203 through the current lead-through path of diode D3 to middle voltage source connection pad MV, and produces the start big electric current of moment.
In brief; Usually need use ESD protection circuit to hold dissipation respectively in the power-supply system of IC interior so that static is led pastly; Not only consume the effective guiding path of shortage between area and each power-supply system, and the efficient not good problem of high voltage source clamped circuit that high potential assembly is formed exists.In addition, for the traditional circuit framework, if the power-up sequence mistake very easily causes the guiding path to high voltage source from low voltage electric power system partially because of diode is suitable, and causes the start big electric current of moment.
Summary of the invention
Therefore, main purpose of the present invention promptly is to provide a kind of electrostatic discharge protective equipment that is used for a multivoltage system.
The present invention discloses a kind of electrostatic discharge protective equipment that is used for a multivoltage system.This electrostatic discharge protective equipment comprises one first circuit blocks, a second circuit block, one first power supply clamped circuit and a second source clamped circuit.This first circuit blocks operates in one first supply voltage.This second circuit block operates in a second source voltage, and this second source voltage is greater than this first supply voltage.This first power supply clamped circuit is coupled to this first circuit blocks, has a breakdown voltage between this first supply voltage and this second source voltage, and one keeps voltage more than or equal to this first supply voltage.This second source clamped circuit repeatedly is connected to this first power supply clamped circuit; And be coupled to this second circuit block; The breakdown voltage summation of this second source clamped circuit and this first power supply clamped circuit is greater than this second source voltage, this second source clamped circuit and this first power supply clamped circuit keep the voltage summation more than or equal to this second source voltage.
Description of drawings
Fig. 1 is for having the sketch map of an integrated circuit of ESD protection circuit in the known technology.
Fig. 2 is the configuration diagram that becomes known for an ESD protection circuit of multi-power supply system.
Fig. 3 is used for the sketch map of an electrostatic discharge protective equipment of a multivoltage system for the present invention.
Fig. 4 to Fig. 7 is the sketch map of the embodiment of the invention one electrostatic discharge protective equipment.
Wherein, description of reference numerals is following:
100 integrated circuits
101,102,201,202,203,411,421, power supply connection pad
431
103,511,521,531 signal bonding pad
110,410～430,510～530,610～630 internal circuits
121,122, D3, D4, HVP, MVP, diode
LVP、HVN、MVN、LVN、HVP1
130,21,22,23,31,32 power supply clamped circuits
200 ESD protection circuits
GC1, GC2 intercept assembly
300,400,500,600,700 electrostatic discharge protective equipments
BLK1, BLK2, BLK3 circuit blocks
LV, MV, HV supply voltage
PC1～PC4 power supply strangulation assembly
Embodiment
Please refer to Fig. 3, Fig. 3 is used for the sketch map of an electrostatic discharge protective equipment 300 of a multivoltage system for the present invention.Electrostatic discharge protective equipment 300 comprises circuit blocks BLK1, BLK2, and power supply clamped circuit 31,32.Circuit blocks BLK1, BLK2 operate in supply voltage LV and MV respectively, and wherein supply voltage MV is greater than supply voltage LV.Power supply clamped circuit 31 is coupled to circuit blocks BLK1, and power supply clamped circuit 32 then is coupled to circuit blocks BLK2, and repeatedly is connected to power supply clamped circuit 31.Power supply clamped circuit 31 has the breakdown voltage (breakdown voltage) between supply voltage MV and LV, and has more than or equal to one of supply voltage LV and keep voltage (holding voltage).In addition, power supply clamped circuit 31 and 32 breakdown voltage summation be greater than supply voltage MV, keeps voltage and have more than or equal to one of supply voltage MV when power supply clamped circuit 31 and 32 conductings simultaneously.
In other words, when circuit blocks BLK1 suffered the electrostatic discharge event greater than the breakdown voltage of power supply clamped circuit 31, power supply clamped circuit 31 can the collapse conductings, and supply voltage LV is clamped to the voltage of keeping of power supply clamped circuit 31; And when circuit blocks BLK2 suffers the electrostatic discharge event greater than the breakdown voltage summation of power supply clamped circuit 32 and 31; Power supply clamped circuit 32 and 31 can collapse conducting simultaneously, and keeps the voltage summation with what supply voltage MV was clamped to power supply clamped circuit 32 and 31.
That is to say that the present invention is repeatedly connecing the mode of multistage power supply clamped circuit, the power-supply system that is respectively different provides electrostatic discharge (ESD) protection.Therefore, the present invention can use protective capability low pressure assembly or middle pressure assembly preferably, reaches the needed conducting voltage of high voltage source clamped circuit and keeps voltage.Thus, can reach the advantage of saving circuit area and raising the efficiency.Certainly, the string visual actual demand of each power supply clamped circuit repeatedly each other can be all identical, part is identical or complete difference, and it all belongs to scope of the present invention.
For instance, please refer to Fig. 4, Fig. 4 is the sketch map of the embodiment of the invention one electrostatic discharge protective equipment 400.In Fig. 4, integrated circuit comprises three groups of different voltages with different systems, representes with circuit blocks BLK1～BLK3 respectively.Circuit blocks BLK1～BLK3 operates in a voltage source voltage MV and a low-tension supply voltage LV among the high-voltage power voltage HV, respectively; For example 32 volts, 12 volts and 5 volts; And comprise an internal circuit 410,420,430 separately; One connection pad 411,421,431 reaches diode HVP, MVP, LVP and HVN, MVN, LVN.If circuit blocks BLK1～BLK3 is power supply circuit, then connection pad 411,421,431 is respectively a power supply connection pad, is used for output supply voltage LV, MV and HV.Diode HVP, MVP, LVP and HVN, MVN, LVN then are used as the ESD protection circuit of connection pad 411,421,431 to other electrical voltage system and ground end.
Under this situation, electrostatic discharge protective equipment 400 is used for to circuit blocks BLK1～BLK3 electrostatic discharge (ESD) protection being provided, and it can be made up of the power supply strangulation assembly PC1～PC4 that repeatedly connects.Wherein, each power supply strangulation assembly can be realized by electrostatic protection efficient higher low pressure assembly or middle pressure assembly.Wherein, Power supply strangulation assembly PC1～PC4 forms the power supply clamped circuit of high-tension circuit block BLK1; The power supply clamped circuit of volt circuit block BLK2 during power supply strangulation assembly PC2 and PC1 form, power supply strangulation assembly PC1 then is the power supply clamped circuit of low-voltage circuit block BLK3.
For instance; If the breakdown voltage of low pressure assembly (for example 5 photovoltaic assemblies) is 10 volts; Keeping voltage is 8 volts, then string repeatedly the low pressure assembly PC1～PC4 of level Four can to form a conducting voltage be 40 volts, keep voltage and be 32 volts high voltage source clamped circuit; And wherein including one group of conducting voltage is 20 volts; Keep voltage and be 16 volts middle voltage source clamped circuit (low pressure assembly PC1 and PC2), and one group of conducting voltage is 10 volts, keeps voltage and be 8 volts low-tension supply clamped circuit (low pressure assembly PC1).
When high voltage source connection pad 411 is subjected to static; And need be from low-tension supply connection pad 431 discharge the time; As shown in Figure 4, electrostatic discharging path can be from power supply connection pad 411 → diode HVP (along partially) → power supply strangulation assembly PC4～PC2 → diode LVP (partially contrary) → power supply connection pad 431.This guiding path only need be through three grades of serial connections power supply strangulation assembly (with 5 photovoltaic assemblies is example; Conducting voltage is about 30 volts); Add the inclined to one side diode LVP of superinverse (about 10 volts), but not (with 40 photovoltaic assemblies is example, and its conducting voltage is usually much larger than 50 volts through diode HVN; As 60 volts) extremely hold, again via the suitable low-tension supply connection pad 431 that is biased to of diode LVN.Therefore, can reduce conducting voltage effectively, and improve the electrostatic discharge (ESD) protection ability through repeatedly connecing the formed electrostatic discharge protective circuit of low pressure assembly.Press during similarly guiding path also can occur on the low pressure or the situation of high pressure centering pressure.
Therefore; Need use high potential assembly, middle pressure assembly and low pressure assembly to realize the power supply clamped circuit of different electric pressing system respectively compared to known technology; The low pressure assembly that the present invention changes through multistage string forms the power supply clamped circuit of different electric pressing system simultaneously; Not only can reduce circuit area, also can improve the protection efficient of static discharge.
In addition, the present invention's big electric current of start that simultaneously also can avoid the electric sequence difference to cause.When integrated circuit begins to be powered, even first supply low-tension supply, because diode HVP and MVP be contrary inclined to one side for low-pressure system, so electric current can't flow to medium voltage network and high-pressure system, and the big electric current that the moment of can avoiding starting shooting causes.
It should be noted that; String power supply strangulation assembly PC1, PC2, PC3, PC4 repeatedly do not need full assembly for same type; And can adjust according to the demand of applied voltage; For example: in 5 volts/12 volts/32 volts system, power supply strangulation assembly PC1～PC4 can realize through 5 photovoltaic assemblies.Yet, if in 5 volts/12 volts/36 volts system, can change into and utilize 12V assembly (breakdown voltage is 26 volts) to realize power supply strangulation assembly PC3, and omit power supply strangulation assembly PC4.Through flexible design like this, can obtain better electro-static discharge protective ability, and reach minimum circuit area.
In addition, the quantity of diode HVP/MVP/LVP is not single fixing, and can adjust according to demand withstand voltage or that keep voltage.For instance, please refer to Fig. 6, Fig. 6 is the sketch map of another embodiment of the present invention one electrostatic discharge protective equipment 600.If electrostatic discharge protective equipment 600 is to be applied to one 5 volts/12 volts/32 volts systems, when high-pressure system need increase the margin of safety of keeping voltage, one or more diode of increase that can be suitable HVP1 was to circuit blocks BLK1.When static occurs in power supply connection pad 611,, therefore can't reduce the antistatic capacity of power supply clamped circuit because diode HVP and HVP1 are operating in along inclined to one side pattern.In addition, the diode HVP1 that is increased also can be realized by the MOS assembly of high pressure.
In brief, the present invention proposes a kind of ESD protection circuit that is used for multi-power system, and it can reach two advantages of saving area and raising the efficiency simultaneously, and need not to consider the problem of power-up sequence.
Certainly, except the application of above-mentioned multi-power supply system, electrostatic discharge protective equipment of the present invention can be applicable in other the multivoltage system in addition.For instance, please refer to Fig. 5, Fig. 5 is the sketch map of another embodiment of the present invention one electrostatic discharge protective equipment 500.In Fig. 5, circuit blocks BLK1～BLK3 is respectively the output-stage circuit that operates in voltage source voltage MV and a low-tension supply voltage LV among the high-voltage power voltage HV.In other words, connection pad 511,521,531 is not the power supply connection pad of transmission bias voltage, and is the signal bonding pad of output signal, or is called I/o pad.Under this situation, each circuit blocks comprises a power supply connection pad in addition, is coupled to internal circuit 510～530, is used for receiving supply voltage HV, MV and LV.
In Fig. 5, when static occurs in signal bonding pad 511 and when desiring toward 532 conductings of low-tension supply connection pad, electrostatic discharging path is signal bonding pad 511 → diode HVP (along partially) → power supply strangulation assembly PC4～PC2 → power supply connection pad 532.(with 5 photovoltaic assemblies is example to the PC that this guiding path only need change through 3 grades of strings; Conducting voltage is about 30 volts), but not (with 40 photovoltaic assemblies is example, and conducting voltage is usually much larger than 50 volts through high potential assembly HVN conducting; As 60 volts) extremely hold, again via the suitable LV Pin that is biased to of LVN.The present invention can reduce conducting voltage effectively thus, and improves the electrostatic discharge (ESD) protection ability.Press during similarly guiding path also can occur on the low pressure or the situation of high pressure centering pressure.
Please continue with reference to figure 7, Fig. 7 is the sketch map of further embodiment of this invention one electrostatic discharge protective equipment 700.Electrostatic discharge protective equipment 700 is embodiment that combine electrostatic discharge protective equipment 400 and 500.Compared to Fig. 4 and Fig. 5, electrostatic discharge protective equipment 700 is that the low-voltage circuit block BLK3 in the electrostatic discharge protective equipment 400 is replaced with the pattern of Fig. 5, this also be general voltage booster common framework.Corresponding variation like this also belongs to scope of the present invention.
Those skilled in the art should be appreciated that the definition of high potential assembly and low pressure assembly among the present invention can use transistorized critical voltage (Threshold Voltage), transistorized gate oxide layer thickness (Gate Oxide thickness), transistorizedly connect face breakdown voltage (Junction Breakdown Voltage), transistorized trap doping density (Well Doping Density), transistorized static leakage current (Static Leakage Current) or above-mentioned arbitrary combination and define.Among the above embodiment, the low pressure assembly is to be made by identical semiconductor technology with high potential assembly (being discharge transistor), in other embodiment, also can come to make respectively by different semiconductor technologies, all belongs to category of the present invention place.
In sum; The present invention forms the power supply clamped circuit of different electric pressing system through the string multistage low pressure assembly that changes; Need use high potential assembly, middle pressure assembly and low pressure assembly to realize the power supply clamped circuit of different electric pressing system respectively compared to known technology; The present invention not only can save circuit area, also can improve the protection efficient of static discharge.
The above is merely the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (15)
1. an electrostatic discharge protective equipment that is used for a multivoltage system is characterized in that, comprising:
One first circuit blocks operates in one first supply voltage;
One second circuit block operates in a second source voltage, and this second source voltage is greater than this first supply voltage;
One first power supply clamped circuit is coupled to this first circuit blocks, has a breakdown voltage between this first supply voltage and this second source voltage, and one keeps voltage more than or equal to this first supply voltage; And
One second source clamped circuit; Repeatedly be connected to this first power supply clamped circuit; And be coupled to this second circuit block; The breakdown voltage summation of this second source clamped circuit and this first power supply clamped circuit is greater than this second source voltage, this second source clamped circuit and this first power supply clamped circuit keep the voltage summation more than or equal to this second source voltage.
2. electrostatic protection device as claimed in claim 1 is characterized in that, this first power supply clamped circuit has identical breakdown voltage and keeps voltage with this second source clamped circuit.
3. electrostatic protection device as claimed in claim 1 is characterized in that, this first power supply clamped circuit and this second source clamped circuit have different breakdown voltage and keep voltage.
4. electrostatic protection device as claimed in claim 1 is characterized in that, this first power supply clamped circuit and this second source clamped circuit are made up of at least one power supply strangulation assembly respectively.
5. electrostatic protection device as claimed in claim 4 is characterized in that, each power supply strangulation assembly all is the low pressure assembly.
6. electrostatic protection device as claimed in claim 1; It is characterized in that; When this first circuit blocks suffers the electrostatic discharge event greater than the breakdown voltage of this first power supply clamped circuit; This first power supply clamped circuit collapses conducting, and this first supply voltage is clamped to the voltage of keeping of this first power supply clamped circuit.
7. electrostatic protection device as claimed in claim 1; It is characterized in that; When this second circuit block suffers the electrostatic discharge event greater than the breakdown voltage summation of this second source clamped circuit and this first power supply clamped circuit; This first power supply clamped circuit and this second source clamped circuit collapse conducting simultaneously, and this second source voltage clamping is kept the voltage summation in this second source clamped circuit and this first power supply clamped circuit.
8. electrostatic protection device as claimed in claim 1 is characterized in that, this first circuit blocks comprises:
One first internal circuit;
One first connection pad is coupled to this first internal circuit; And
One first diode has an anode and is coupled to this first connection pad, and a negative terminal is coupled to this first power supply clamped circuit.
9. electrostatic protection device as claimed in claim 8 is characterized in that, this first connection pad is a signal bonding pad.
10. electrostatic protection device as claimed in claim 9 is characterized in that, this first circuit blocks comprises one in addition
The power supply connection pad is coupled to this negative terminal and this first power supply clamped circuit of this first diode, is used for receiving this first supply voltage.
11. electrostatic protection device as claimed in claim 8 is characterized in that, this first connection pad is a power supply connection pad, is used for receiving this first supply voltage.
12. electrostatic protection device as claimed in claim 1 is characterized in that, this second circuit block comprises:
One second internal circuit;
One second connection pad is coupled to this second internal circuit; And
One second diode has an anode and is coupled to this second connection pad, and a negative terminal is coupled to this second source clamped circuit.
13. electrostatic protection device as claimed in claim 12 is characterized in that, this second connection pad is a signal bonding pad.
14. electrostatic protection device as claimed in claim 13 is characterized in that, this second circuit block comprises a power supply connection pad in addition, is coupled to this negative terminal and this second source clamped circuit of this second diode, is used for receiving this second source voltage.
15. electrostatic protection device as claimed in claim 12 is characterized in that, this second connection pad is a power supply connection pad, is used for receiving this second source voltage.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105197605A CN102457053A (en) | 2010-10-18 | 2010-10-18 | Electrostatic discharge protection device applicable to multi-voltage system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105197605A CN102457053A (en) | 2010-10-18 | 2010-10-18 | Electrostatic discharge protection device applicable to multi-voltage system |
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| CN102457053A true CN102457053A (en) | 2012-05-16 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5946177A (en) * | 1998-08-17 | 1999-08-31 | Motorola, Inc. | Circuit for electrostatic discharge protection |
| CN1414678A (en) * | 2001-10-23 | 2003-04-30 | 联华电子股份有限公司 | Electrostatic Discharge Protection Circuit Using Substrate Triggered Silicon Controlled Rectifier |
| CN1835315A (en) * | 2005-01-05 | 2006-09-20 | 因芬尼昂技术股份公司 | Device, arrangement and system for ESD protection |
| CN101258597A (en) * | 2005-07-08 | 2008-09-03 | Nxp股份有限公司 | Integrated Circuits with Electrostatic Discharge Protection |
| CN101689545A (en) * | 2007-06-21 | 2010-03-31 | Nxp股份有限公司 | Esd protection circuit |
-
2010
- 2010-10-18 CN CN2010105197605A patent/CN102457053A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5946177A (en) * | 1998-08-17 | 1999-08-31 | Motorola, Inc. | Circuit for electrostatic discharge protection |
| CN1414678A (en) * | 2001-10-23 | 2003-04-30 | 联华电子股份有限公司 | Electrostatic Discharge Protection Circuit Using Substrate Triggered Silicon Controlled Rectifier |
| CN1835315A (en) * | 2005-01-05 | 2006-09-20 | 因芬尼昂技术股份公司 | Device, arrangement and system for ESD protection |
| CN101258597A (en) * | 2005-07-08 | 2008-09-03 | Nxp股份有限公司 | Integrated Circuits with Electrostatic Discharge Protection |
| CN101689545A (en) * | 2007-06-21 | 2010-03-31 | Nxp股份有限公司 | Esd protection circuit |
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Application publication date: 20120516 |