CN102456573A - Method for manufacturing thin film transistor - Google Patents
Method for manufacturing thin film transistor Download PDFInfo
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- CN102456573A CN102456573A CN2010105161158A CN201010516115A CN102456573A CN 102456573 A CN102456573 A CN 102456573A CN 2010105161158 A CN2010105161158 A CN 2010105161158A CN 201010516115 A CN201010516115 A CN 201010516115A CN 102456573 A CN102456573 A CN 102456573A
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- film transistor
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- electrode material
- manufacturing
- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims description 32
- 239000007772 electrode material Substances 0.000 claims abstract description 72
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 206010034972 Photosensitivity reaction Diseases 0.000 claims abstract 3
- 230000036211 photosensitivity Effects 0.000 claims abstract 3
- 239000007769 metal material Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 238000013459 approach Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 238000000576 coating method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical group C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910004866 Cd-Zn Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- UMJICYDOGPFMOB-UHFFFAOYSA-N zinc;cadmium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Cd+2] UMJICYDOGPFMOB-UHFFFAOYSA-N 0.000 description 1
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- Thin Film Transistor (AREA)
Abstract
The invention relates to a manufacturing method of a thin film transistor element, which comprises the following steps: providing a substrate; forming a semiconductor layer over the substrate; forming an electrode material having photosensitivity over the substrate; covering the first part of the electrode material and exposing a second part which is exposed; and removing the second portion of the electrode material to leave the first portion to form an electrode structure of the thin film transistor device. The manufacturing method of the thin film transistor element can greatly simplify the manufacturing process of the thin film transistor element.
Description
Technical field
The present invention relates to a kind of manufacturing approach of thin-film transistor element, relate in particular to and utilize electrode material to make the manufacturing approach of thin-film transistor element with photobehavior.
Background technology
Please refer to Fig. 1 a to Fig. 1 g, it is for making the sketch map of flow process about plain conductor in the prior art production thin-film transistor element processing procedure.Produce in the processing procedure of thin-film transistor element in present stage; Mainly can be divided into three production phases; These three production phases are respectively formative stage I, photoresistance definition phase II and etch phase III, and wherein formative stage I comprises substrate 101 is provided, applies steps such as micro-nano metal material 103 of Fig. 1 a and Fig. 1 b; Photoresistance definition phase II comprises steps such as the photoresistance coating, exposure, development of Fig. 1 c, Fig. 1 d and Fig. 1 e; Etch phase III then comprises steps such as the film etching shown in Fig. 1 f and Fig. 1 g, photoresistance removal.
In formative stage I, prior art at first shown in Fig. 1 a, provides with the formed substrate 101 of materials such as glass; And in Fig. 1 b, utilize the rotation modes such as (Spin Coating) that applies that micro-nano metal material 103 rotations are coated on the substrate 101.
In photoresistance definition phase II, Fig. 1 c is coated in photoresistance 105 on the micro-nano metal material 103 through the mode that rotation applies, and it is carried out the exposure of Fig. 1 d and the development step of Fig. 1 e.
At last when etch phase III, the mode that also need utilize the photoresistance of film etching and Fig. 1 g of Fig. 1 f to remove could be accomplished in the manufacturing thin-film transistor element definition about the required electrode pattern of plain conductor making flow process.
The mode that prior art adopted not only need be carried out twice rotation to substrate 101 and applied (promptly; To micro-nano metal material 103 and photoresistance 105) step; At last also need be through etch process to remove the photoresistance on the electrode, therefore the production cycle of a whole set of thin-film transistor element is flooded with the step that applies material unnecessary when removing final output.
Cause the problem of production cycle elongation except being rotated repeatedly to apply with etch process; Prior art also has needs to use vapour deposition high temperature film-plating process; And molding mode that uses such as laser are filled (Laser inject); Laser thermal conversion image (Laser induced thermal imaging; Abbreviate LITI as) with existing thin-film transistor (Thin-film transistor abbreviates TFT as) manufacturing equipment problem such as compatibility mutually not, these complicated steps all let the production of thin-film transistor element more seem time-consuming.
Can learn that from foregoing the processing procedure of existing thin-film transistor element has serious consumption gold-tinted production capacity and increases the shortcoming of making production cost, so the present invention is just with this target as improvement.
Summary of the invention
The object of the invention is exactly the manufacturing approach that is to provide a kind of thin-film transistor element, and it can be simplified processing procedure and reduce production costs.
One of the object of the invention provides a kind of manufacturing approach of thin-film transistor element, and the method comprises following steps: a substrate is provided; Form semi-conductor layer on substrate; To have a photosensitive electrode material is formed on the substrate; Cover the first of electrode material and a second portion that exposes is made public; And remove the second portion of electrode material and stay first and form an electrode structure of thin-film transistor element.
In one embodiment of this invention, the manufacturing approach of aforesaid thin-film transistor element more comprises following steps: form an insulating barrier on electrode material.
In one embodiment of this invention, aforesaid semiconductor layer is amorphous silicon (amorphous silicon) or matal-oxide semiconductor material.
In one embodiment of this invention, aforesaid electrode material comprises a metal material, and metal material is gold (Au), silver (Ag) or nickel (Ni).
In one embodiment of this invention, aforesaid electrode material comprises a photoactive substance, and photoactive substance is benzocyclobutene (Bezocyloutene) or dinitrogen base quinone (Diazonaphthoquinone).
In one embodiment of this invention, aforesaid electrode structure is a gate electrode, one source pole electrode or a show electrode.
In one embodiment of this invention, aforesaid electrode material is formed on the semiconductor layer with a coating method.
In one embodiment of this invention, aforesaid semiconductor layer is formed at the top of electrode material.
In one embodiment of this invention, aforesaid electrode material is formed at the top of semiconductor layer.
Another object of the present invention provides a kind of manufacturing approach of thin-film transistor element, and the method comprises following steps: a substrate is provided; Form semi-conductor layer on substrate; To have a photosensitive electrode material is formed on the substrate; Cover the second portion of electrode material and a first of exposing is made public; And remove the second portion of electrode material and stay first and form an electrode structure of thin-film transistor element.
In one embodiment of this invention, the manufacturing approach of aforesaid thin-film transistor element more comprises following steps: form an insulating barrier on electrode material.
In one embodiment of this invention, aforesaid semiconductor layer is amorphous silicon (amorphous silicon) or matal-oxide semiconductor material.
In one embodiment of this invention, aforesaid electrode material comprises a metal material, and metal material is gold (Au), silver (Ag) or nickel (Ni).
In one embodiment of this invention, aforesaid electrode material comprises a photoactive substance, and photoactive substance is benzocyclobutene (Bezocyloutene) or dinitrogen base quinone (Diazonaphthoquinone).
In one embodiment of this invention, aforesaid electrode structure is a gate electrode, one source pole electrode or a show electrode.
In one embodiment of this invention, aforesaid electrode material is formed on the semiconductor layer with a coating method.
In one embodiment of this invention, aforesaid semiconductor layer is formed at the top of electrode material.
In one embodiment of this invention, aforesaid electrode material is formed at the top of semiconductor layer.
By on can know; The present invention uses on substrate has photosensitive metal material; Therefore follow-up electrode structure or non-electrode structure are partly carried out optionally step of exposure after; As long as just can accomplish the manufacturing of thin-film transistor element again through step of developing, thoroughly improved prior art and must pass through the various shortcoming that steps such as complicated photoresistance coating, film etching, photoresistance removal could define electrode pattern.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Fig. 1 a to Fig. 1 g makes the sketch map of flow process about plain conductor in the prior art production thin-film transistor element processing procedure.
Fig. 2 a and Fig. 2 b are that thin-film transistor component adopts the sketch map of grid structure down.
Fig. 2 c is that thin-film transistor component adopts the sketch map of going up grid structure.
Fig. 3 a is the flow chart of the thin-film transistor element manufacturing approach of first embodiment provided by the present invention.
Fig. 3 b to Fig. 3 f is applied to produce in the thin-film transistor element processing procedure about making the sketch map of metal electrode structure part for the manufacturing approach according to first embodiment proposed by the invention.
Fig. 4 a is the flow chart of the thin-film transistor element manufacturing approach of second embodiment provided by the present invention.
Fig. 4 b and Fig. 4 c are applied to produce in the thin-film transistor element processing procedure about making the sketch map of metal electrode structure part for the manufacturing approach according to second embodiment proposed by the invention.
[main element symbol description]
101,201,301: substrate
103: micro-nano metal material
105: photoresistance
S211～S219, S311～S319: step
202,302: semiconductor layer
203,303: electrode material
204: dielectric layer
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To its embodiment of thin-film transistor element manufacturing approach, method, step, structure, characteristic and the effect that proposes according to the present invention, specify as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can clearly appear in following the cooperation in the graphic preferred embodiment detailed description of reference.Through the explanation of embodiment, can be to reach technological means that predetermined purpose takes and effect to have one more deeply and concrete understanding to the present invention, yet the appended graphic usefulness that only provides reference and explanation be not to be used for the present invention is limited.
Please refer to Fig. 2 a and Fig. 2 b, it adopts the sketch map of grid structure down for thin-film transistor component, and compared to Fig. 2 a and Fig. 2 b, what the thin-film transistor component of Fig. 2 c adopted is to go up grid structure.Although framework is slightly different, can find out that semiconductor layer 202, electrode material 203, dielectric layer 204 all are formed at the top of substrate 201.
In each material layer of Fig. 2 a, except the substrate 201 of the bottom, order from bottom to top is respectively: with electrode material 203 formed grids, dielectric layer 204, semiconductor layer 202, and electrode material 203 formed source electrode and drain electrodes.
In each material layer of Fig. 2 b, the top of substrate 201 is respectively: with electrode material 203 formed grids, dielectric layer 204, electrode material 203 formed source electrode and grids, and semiconductor layer 202.Compared to Fig. 2 a, this graphic semiconductor layer 202 is covered in source electrode and the drain electrode that utilizes electrode material 203 to realize.
As for the formation of each material layer of Fig. 2 c order then be: the substrate 201 of the bottom, with electrode material 203 formed source electrodes and drain electrode, dielectric layer 204, semiconductor layer 202, and electrode material 203 formed grids.This graphic main difference with the above two is that grid is formed at the top, therefore is called grid structure.
In simple terms, grid structure or go up grid structure under being that no matter adopts between each material layer, thin-film transistor element manufacturing approach proposed by the invention all can be suitable for.This is that because the present invention focuses on is how various electrode structures to be formed on the substrate with the electrode material with sensing optical activity the stack manner of electrode material and other materials then belongs to the variation when arranging in pairs or groups.
Below can whether be that the part that forms electrode structure is divided into Fig. 3 and two embodiment of Fig. 4 according to part that etching removed about application of the present invention.First embodiment wherein shown in Figure 3 keeps the first that forms electrode structure and make public, and the practice that removes of the second portion of the non-electrode structure of mode such as collocation etching after will making public; Second embodiment shown in Figure 4 makes public to the first that forms electrode structure, the practice that modes such as the etching of then arranging in pairs or groups will remove without the second portion of the non-electrode structure that makes public.
Please refer to Fig. 3 a, it is the flow chart of the thin-film transistor element manufacturing approach of first embodiment provided by the present invention.The thin-film transistor element manufacturing approach of first embodiment proposed by the invention comprises following steps: substrate (step S211) is provided; Form semiconductor layer in substrate top (step S213); To have photosensitive electrode material and be formed at substrate top (step S215); Cover electrode material first and to the second portion that exposes make public (step S217); And remove the second portion of electrode material and stay first and form the electrode structure (step S219) of thin-film transistor element.
Additional disclosure be that the sequencing that semiconductor layer here and electrode material form on substrate need not be defined.Therefore no matter in brief, the present invention is a generation type of improving electrode structure, and which kind of framework what thin-film transistor component adopted is, the manufacturing approach proposed by the invention of all can arranging in pairs or groups.
Please refer to Fig. 3 b to Fig. 2 f, it is applied to produce in the thin-film transistor element processing procedure about making the sketch map of metal electrode structure part for the manufacturing approach according to first embodiment proposed by the invention.For the purpose of simplifying the description, in this preferred embodiment, be to be example, but similarly the practice still can be employed and formerly form the situation of electrode material on substrate to form earlier the order that semiconductor layer, back form electrode material.
In Fig. 3 b, at first utilize materials such as glass that substrate 201 is provided; Then shown in Fig. 3 c, 201 form semiconductor layer 202 on substrate; And in the step of subsequent figures 3d, will have photosensitive electrode material 203 and be coated on the semiconductor layer 202; To have after photosensitive electrode material 203 utilizes photoresistance coating machine (Spin Coater) to be formed on the semiconductor layer 202, for another example shown in Fig. 3 d, after hope covered in order to the first that forms electrode structure, it made public; After the process of Fig. 3 e through exposure lets the photonasty electrode material 203 on the second portion of non-electrode structure that photoresponses take place; Again the thin-film transistor element after the exposure is developed at last, and then accomplish the thin-film transistor element shown in Fig. 3 f with electrode structure.Thus, not only save the processing procedure that prior art must be passed through vapour deposition high temperature plated film, also saved follow-up etch process.
Please refer to Fig. 4 a, it is the flow chart of the thin-film transistor element manufacturing approach of second embodiment provided by the present invention.Do not influence the conception that utilization of the present invention has the electrode material formation electrode structure of sensitization character owing to form the order of semiconductor layer and electrode material; Therefore the preferred embodiment below is the example that is configured to that is formed at the semiconductor layer top with electrode material; But similarly the practice still can be employed and formerly form electrode material, the back forms the situation of semiconductor layer in the substrate top, and what therefore no matter adopt is that any structure among Fig. 2 a to Fig. 2 c all can adopt manufacturing approach proposed by the invention.
The thin-film transistor element manufacturing approach of second embodiment proposed by the invention comprises following steps: substrate (step S311) is provided; Form semiconductor layer in substrate top (step S313); To have photosensitive electrode material and be formed at substrate top (step S315); Cover electrode material second portion and to the first of exposing make public (step S317); And remove the second portion of electrode material and stay first and form the electrode structure (step S319) of thin-film transistor element.
Please refer to Fig. 4 b and Fig. 4 c, it is applied to produce in the thin-film transistor element processing procedure about making the sketch map of metal electrode structure part for the manufacturing approach according to second embodiment proposed by the invention.Because the initial flow process of the thin-film transistor element manufacturing approach of two embodiment proposed by the invention is quite similar, therefore has step such as photosensitive electrode material 303 with coating and just no longer give unnecessary details about on substrate 301, forming semiconductor layer 302.
In Fig. 4 b; Cover in order to the second portion that forms electrode structure non-; And let the having after photosensitive electrode material makes public of the first that forms electrode structure; Electrode material on the semiconductor layer will distribute according to the entity of electrode structure form two kinds of materials, then utilize mode such as development that the part (being second portion) of non-electrode structure is removed again after, just form the thin-film transistor element shown in Fig. 4 c with electrode structure.
Having photosensitive electrode material among the present invention can be micro-nano metal material to be mixed the back form with photoactive substance, and is formed on the semiconductor layer with the mode that applies.Have in the photosensitive electrode material in formation; Metal material can be gold (Au), silver (Ag), nickel (Ni) wait each metalloid; And photoactive substance benzocyclobutene capable of using (Bezocyloutene abbreviates BCB as), dinitrogen base quinone photosensitive materials such as (Diazonaphthoquinone abbreviate DNQ as).Certainly, during practical application, the selection of metal material and photoactive substance is not exceeded with the above-mentioned person of enumerating, every can provide have photosensitive material all can among the present invention in order to form the electrode material of electrode structure.And formed according to the method for the invention electrode structure can be used as gate electrode, source electrode or show electrode.On the other hand, be used for then can carrying out through repeating the stepping exposure machine to having the process that photosensitive electrode material makes public.
Except utilization have photosensitive electrode material form electrode structure on semiconductor layer and substrate, further the formation insulating barrier is on it above electrode material.
Semiconductor layer as for being formed between substrate and electrode structure then can be amorphous silicon (amorphoussilicon; Abbreviate a-Si as), matal-oxide semiconductor (oxide metal semiconductor) material; As: indium gallium zinc oxide (IGZO), indium-zinc oxide (indium zinc oxide abbreviates IZO as), zinc oxide (Zn Oxide), magnesium-zinc oxide (Mg-Zn Oxide), cadmium zinc oxide (Cd-Zn Oxide), cadmium oxide (Cd Oxide) etc.
In other words; According to technology proposed by the invention; Can let the manufacture process of whole thin-film transistor element all in yellow light area, accomplish; Let the processing procedure of thin-film transistor element be able to significantly simplify and let production capacity be able to promote, and whole processing procedures all can carry out in relatively low temperature (being lower than 200 degree Celsius) environment, to reduce the inconvenience of manufacture process.
With the practice of the present invention compared with prior art; Can clearly find out; The practice of the present invention has photosensitive micro-nano metal material on substrate because use; Therefore follow-up electrode structure or non-electrode structure are partly carried out optionally step of exposure after; As long as just can accomplish the manufacturing of thin-film transistor element again through step of developing, thoroughly improved prior art and must pass through the various shortcoming that steps such as complicated photoresistance coating, film etching, photoresistance removal could define electrode pattern.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the technology contents of above-mentioned announcement capable of using is made a little change or is modified to the equivalent embodiment of equivalent variations; In every case be not break away from technical scheme content of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (14)
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