CN102445862A - Improved wafer developing method - Google Patents
Improved wafer developing method Download PDFInfo
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- CN102445862A CN102445862A CN2010105037358A CN201010503735A CN102445862A CN 102445862 A CN102445862 A CN 102445862A CN 2010105037358 A CN2010105037358 A CN 2010105037358A CN 201010503735 A CN201010503735 A CN 201010503735A CN 102445862 A CN102445862 A CN 102445862A
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- wafer
- deionized water
- photoresist
- crystal column
- column surface
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000008367 deionised water Substances 0.000 claims abstract description 40
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- 239000007921 spray Substances 0.000 claims description 16
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- -1 tetramethyl aqua ammonia Chemical compound 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 5
- 238000005507 spraying Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 44
- 229920002120 photoresistant polymer Polymers 0.000 description 42
- 239000013078 crystal Substances 0.000 description 33
- 239000000243 solution Substances 0.000 description 26
- 230000002950 deficient Effects 0.000 description 12
- 238000011161 development Methods 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 10
- 238000012822 chemical development Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005950 photosensitized reaction Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides an improved wafer developing method, which comprises the following steps of: A, spraying de-ionized water to an upper surface of an exposed wafer, wherein the de-ionized water completely covers the upper surface of the wafer; B, uniformly spraying developing solution to the upper surface of the wafer; and C, spraying the de-ionized water to the wafer while rotating the wafer at a high speed to realize cleaning of the wafer. Through the scheme provided by the invention, the occurrence of a satellite-shaped defect on the surface of the wafer can be effectively avoided.
Description
Technical field
The present invention relates to SIC (semiconductor integrated circuit) manufacturing technology field, particularly a kind of improved wafer developing method.
Background technology
Photoetching uses photosensitive photoresist (PR) material and controllable exposure to form three-dimensional picture at crystal column surface.Photoetching is in the core of wafer fabrication processes, is considered to the step of most critical in the integrated circuit manufacturing usually, needs to obtain high performance photoetching product so that combine other technologies to obtain high finished product rate.According to estimates, the photoetching cost almost accounts for 1/3rd in whole wafer processing cost.
Photoetching process is the process of a complicacy, has a lot of state-variables that influence its process tolerance.For making things convenient for device, can the figure forming process of photoetching be divided into eight steps, be respectively:
1, gas phase becomes counterdie: at first wafer is carried out cleaning and removing and remove pollutant, dewatering then causes dried baking and banking up with earth, and can carry out film forming then and handle, and generates development bottom antireflective coating (BARC) on the surface of silicon base.The effect of BARC strengthens the adhesiveness between wafer and the photoresist, and prevents ultraviolet reflection.
2, rotation gluing: after film forming is handled, adopt the method for rotation gluing evenly to coat liquid phase photoresist material on the counterdie surface immediately.
3, soft baking: wafer temperature is brought up to 90 degrees centigrade to 100 degrees centigrade bakings about 30 seconds, cooling then, to remove the solvent of photoresist, it is solid-state to make photoresist become.
4, aligning and exposure: cover mask at crystal column surface with the pattern that is provided with in advance; After mask and wafer are accurately aimed at; Shine wafer from the top with ultraviolet ray; The photoresist generation photosensitized reaction of not blocked by mask realizes exposure, and the pattern on the mask just is transferred on the photoresist.
5, bake and bank up with earth after the exposure: this step is necessary for deep ultraviolet light-sensitive lacquer, is optional step for non-deep ultraviolet light-sensitive lacquer.
6, develop: the solubilized zone of photoresist is dissolved by chemical development, and island or window-like figure are stayed crystal column surface; After the development, make the wafer high speed rotating, with deionized water wafer is washed simultaneously, stop to wash the back wafer and continue high speed rotating, wafer is dried.
7, post bake is baked and banked up with earth: the effect of this step is to vapor away residual photoresist solvent, improves the adhesiveness of photoresist to crystal column surface.
8, development back inspection: be used to find out the defective in quality wafer of photoresist.
The photoetching process of prior art is checked in this step after development, tends to find satellite shape defective (Satellite Defect) at crystal column surface.Be illustrated in figure 1 as the local pictures synoptic diagram of after development, checking observed crystal column surface in the step.In crystal column surface 101, can find significantly big protrusion defect 102, and around big protrusion defect 102, can find the less protrusion defect 103 of some.In a single day above-mentioned defective has appearred in wafer, then must do over again, and will cause harmful effect to production efficiency like this.
Summary of the invention
The invention provides a kind of improved wafer developing method, can effectively avoid the appearance of crystal column surface satellite shape defective.
A kind of improved wafer developing method that the embodiment of the invention proposes comprises the steps:
A, the wafer upper surface after the exposure is sprayed deionized water, deionized water covers the upper surface of wafer fully;
B, developer solution evenly is sprayed at the wafer upper surface;
C, when making the wafer high speed rotating, spray deionized water, realize cleaning wafer to wafer.
Preferably, said developer solution is the deionized water solution of tetramethyl aqua ammonia, and concentration is 0.1% to 2.3%.
Preferably, the said sprinkling of deionized water speed of steps A is 50 milliliters/second to 3000 milliliters/second.
Preferably, the said sprinkling of deionized water time of steps A is 1 second to 50 seconds.
Preferably, the said deionized water temperature of steps A is 0 degree centigrade to 60 degrees centigrade.
Can find out from above technical scheme; Before developer solution sprays, deionized water is covered crystal column surface; Can effectively avoid producing air bubble on the photoresist interface; Thereby can make photoresist dissolved more fully, and avoid the photoresist particulate to be attracted to crystal column surface, and then avoid the appearance of satellite shape defective.
Description of drawings
Fig. 1 is a local pictures synoptic diagram of after development, checking observed crystal column surface in the step;
Fig. 2 is a crystal column surface partial cutaway schematic behind the resist exposure;
Fig. 3 is the crystal column surface partial cutaway schematic of developing process incipient stage;
Fig. 4 carries out the crystal column surface partial cutaway schematic in the process for developing process;
The crystal column surface partial cutaway schematic of Fig. 5 when with deionized water wafer being cleaned after the development step;
Fig. 6 is the crystal column surface partial cutaway schematic after drying;
The improved wafer developing method process flow diagram that Fig. 7 proposes for the embodiment of the invention.
Embodiment
The inventor thinks that through photoetching process is analyzed the origin cause of formation of satellite shape defective is to be in the development step, and the photoresist in solubilized zone has a small amount of photoresist remaining not by dissolving fully.
Fig. 2 to Fig. 6 is the generting machanism synoptic diagram of the satellite shape defective of inventor's analysis.Wherein Fig. 2 is a crystal column surface partial cutaway schematic behind the resist exposure, and silicon base 201 upper surfaces cover one deck BARC202, and the upper surface of BARC202 then covers photoresist, and photoresist is divided into unexposed area 203 and exposure area 204.Fig. 3 then shows the crystal column surface partial cutaway schematic of developing process incipient stage.In development phase, chemical development 208 is sprayed on crystal column surface, because photoresist has hydrophobicity, therefore on the interface of chemical development 208 and photoresist, can form small air bubble 207.Fig. 4 shows developing process and carries out the crystal column surface partial cutaway schematic in the process.The exposure area 203 of photoresist is because by chemical development 208 dissolvings, thickness is than significantly minimizing among Fig. 3, but because not dissolved photoresist remaining 209 has appearred in the influence of bubble 207 below bubble 207.Crystal column surface partial cutaway schematic when Fig. 5 shows after the development step and with deionized water wafer to be cleaned.Initial in this stage; Chemical development liquid is greatly diluted the pH value generation acute variation (PH Shock) of the chemical solution that causes the crystal column surface covering by deionized water; This is parsed from solution again by the photoresist of peeling off from crystal column surface and dissolve in developing process for some, forms photoresist particulate 210.Photoresist particulate 210 can not be by deionized water 211 dissolvings, and in the time of near these photoresist particulates 210 are in bubble 207, because the hydrophobicity of photoresist, these photoresist particulates 210 are assembled to bubble 207, and are attracted on the bubble 207.Fig. 6 shows the crystal column surface partial cutaway schematic after the drying.Can find out that photoresist remaining 209 remains on the BARC 202 with photoresist particulate 210, and photoresist particulate 210 is looped around around the photoresist remaining 209, formed satellite shape defective.
Generting machanism through above-mentioned satellite shape defective can find out that the small air bubble that forms on the interface of developer and photoresist and the acute variation of pH value (or being called the PH impact) are the major reasons that produces satellite shape defective.
For fear of the generation of this problem, a kind of possible means are that board equipment is improved, and will spray a developer solution and spray developer solution instead twice: after wafer is sprayed the developer solution of normal concentration, wafer is dried; Developer solution with dilution sprays wafer once more, and then with the deionized water cleaning wafer and dry wafer, so just can avoid occurring the PH impact.But this improved procedure is very high to the hardware requirement of board equipment, can't not realize if board hardware is not supported above-mentioned functions.And this method also can't stop to form on developer and the photoresist interface small air bubble.
The present invention program improves the cleaning of the back wafer that develops, and the online method for cleaning wafer that the embodiment of the invention proposes need not board equipment is done the improvement of hardware aspect, appearance that also can satellite shape defective.
The improved wafer developing method that the embodiment of the invention proposes is applied to after the step of exposure in the photoetching process, and to replace the developing process of existing photoetching process, its flow process is as shown in Figure 7, comprises the steps:
Step 701: the deionized water shower nozzle is placed directly over the crystal circle center after the exposure;
Step 702: the deionized water shower nozzle is to wafer upper surface spray deionized water, and deionized water covers the upper surface of wafer fully.
Step 703: remove the deionized water shower nozzle, the developer solution sprayer is placed initial position.
Step 704: the developer solution sprayer is moved to end position from initial position, and the developer solution sprayer passes through the upper surface of wafer in the moving process, and developer solution evenly is sprayed at the wafer upper surface.
Step 705: the deionized water shower nozzle is placed directly over the crystal circle center after the exposure, and when making the wafer high speed rotating, the deionized water shower nozzle sprays deionized water to wafer, realizes the cleaning to wafer.
Preferably, the developer solution that uses in the embodiment of the invention is the deionized water solution of tetramethyl aqua ammonia (TMAH), and concentration is 0.1% to 2.3%.And the TMAH concentration of normally used developer solution is 2.38% in the prior art.
Preferably, in the embodiment of the invention, the sprinkling of deionized water speed of step 702 is 50 milliliters/second to 3000 milliliters/second, and spraying time is 1 second to 50 seconds, and temperature is 0 degree centigrade to 60 degrees centigrade.
In the prior art; The major reason that produces air bubble on the interface of photoresist and developer solution is that the developer solution sprayer is to spray a developer solution with the mode of scanning at crystal column surface; The duration of spray developing liquid is shorter, therefore is difficult to avoid on the interface of photoresist and developer solution, producing air bubble.In the technical scheme of the embodiment of the invention; Be crystal column surface to be continued to spray in the step 702 with the deionized water shower nozzle; Its duration will be much larger than the duration of spray developing liquid in the prior art, can effectively avoid producing air bubble on the interface of photoresist and deionized water.Owing to there be not stopping of air bubble, the reaction of developer solution and photoresist is more abundant, can avoid occurring photoresist remnants; In addition, PH impacts and generation photoresist particulate even occurred in the subsequent step, owing to there is not the suction-operated of air bubble, the photoresist particulate also is difficult to attached to crystal column surface under the flushing of deionized water.Therefore, the present invention program can effectively avoid the generation of satellite shape defective.
Embodiment of the invention scheme is different from the preparatory wetting scheme of other any wafers, and the preparatory wetting scheme of said wafer need dry wafer, and before developer solution sprays, keeps crystal column surface dry.The present invention program covers crystal column surface with deionized water before developer solution sprays, during spray developing liquid, crystal column surface is covered with deionized water.
Say from principle,, also can reach the effect of avoiding occurring air bubble, but, do obviously to make production cost rise like this because the cost of developer solution is more much higher than deionized water if crystal column surface is continued to spray with developer solution.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being made, is equal to replacement, improvement etc., all should be included within the scope that the present invention protects.
Claims (5)
1. an improved wafer developing method is characterized in that, comprises the steps:
A, the wafer upper surface after the exposure is sprayed deionized water, deionized water covers the upper surface of wafer fully;
B, developer solution evenly is sprayed at the wafer upper surface;
C, when making the wafer high speed rotating, spray deionized water, realize cleaning wafer to wafer.
2. method according to claim 1 is characterized in that, said developer solution is the deionized water solution of tetramethyl aqua ammonia, and concentration is 0.1% to 2.3%.
3. method according to claim 1 is characterized in that, the said sprinkling of deionized water speed of steps A is 50 milliliters/second to 3000 milliliters/second.
4. method according to claim 1 is characterized in that, the said sprinkling of deionized water time of steps A is 1 second to 50 seconds.
5. method according to claim 1 is characterized in that, the said deionized water temperature of steps A is 0 degree centigrade to 60 degrees centigrade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105037358A CN102445862A (en) | 2010-09-30 | 2010-09-30 | Improved wafer developing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105037358A CN102445862A (en) | 2010-09-30 | 2010-09-30 | Improved wafer developing method |
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| Publication Number | Publication Date |
|---|---|
| CN102445862A true CN102445862A (en) | 2012-05-09 |
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| CN2010105037358A Pending CN102445862A (en) | 2010-09-30 | 2010-09-30 | Improved wafer developing method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849967A (en) * | 2015-05-20 | 2015-08-19 | 中国航天科技集团公司第九研究院第七七一研究所 | Photoetching development method capable of eliminating photoetching development defects |
| CN107942623A (en) * | 2017-11-21 | 2018-04-20 | 上海华虹宏力半导体制造有限公司 | A kind of method for strengthening post-develop photoresist adhesiveness |
| CN111508821A (en) * | 2020-04-01 | 2020-08-07 | 上海华虹宏力半导体制造有限公司 | Wafer cleaning method |
| WO2022095483A1 (en) * | 2020-11-09 | 2022-05-12 | 长鑫存储技术有限公司 | Developing method and device |
| US12276914B2 (en) | 2020-11-09 | 2025-04-15 | Changxin Memory Technologies, Inc. | Developing method and apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2521849B2 (en) * | 1980-08-11 | 1996-08-07 | ディスコビジョン アソシエイツ | Method of developing photoresist layer |
| US6159662A (en) * | 1999-05-17 | 2000-12-12 | Taiwan Semiconductor Manufacturing Company | Photoresist development method with reduced cycle time and improved performance |
| JP2004094241A (en) * | 2002-08-12 | 2004-03-25 | Air Products & Chemicals Inc | Acetylenic diol surfactant solution and usage of the same |
| CN101609269A (en) * | 2008-06-17 | 2009-12-23 | 东京毅力科创株式会社 | Developing method and development processing apparatus |
-
2010
- 2010-09-30 CN CN2010105037358A patent/CN102445862A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2521849B2 (en) * | 1980-08-11 | 1996-08-07 | ディスコビジョン アソシエイツ | Method of developing photoresist layer |
| US6159662A (en) * | 1999-05-17 | 2000-12-12 | Taiwan Semiconductor Manufacturing Company | Photoresist development method with reduced cycle time and improved performance |
| JP2004094241A (en) * | 2002-08-12 | 2004-03-25 | Air Products & Chemicals Inc | Acetylenic diol surfactant solution and usage of the same |
| CN101609269A (en) * | 2008-06-17 | 2009-12-23 | 东京毅力科创株式会社 | Developing method and development processing apparatus |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849967A (en) * | 2015-05-20 | 2015-08-19 | 中国航天科技集团公司第九研究院第七七一研究所 | Photoetching development method capable of eliminating photoetching development defects |
| CN107942623A (en) * | 2017-11-21 | 2018-04-20 | 上海华虹宏力半导体制造有限公司 | A kind of method for strengthening post-develop photoresist adhesiveness |
| CN111508821A (en) * | 2020-04-01 | 2020-08-07 | 上海华虹宏力半导体制造有限公司 | Wafer cleaning method |
| WO2022095483A1 (en) * | 2020-11-09 | 2022-05-12 | 长鑫存储技术有限公司 | Developing method and device |
| US12276914B2 (en) | 2020-11-09 | 2025-04-15 | Changxin Memory Technologies, Inc. | Developing method and apparatus |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121121 |
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Effective date of registration: 20121121 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20120509 |