CN102430547A - Deep ultraviolet optical film processing device - Google Patents

Abstract

A deep ultraviolet optical film processing device relates to the technical field of application of deep ultraviolet optics and comprises a control module and a processing cavity, wherein the control module is used for setting and controlling running states of the processing cavity, and the processing cavity is used for processing a deep ultraviolet optical film. The control module comprises a transformer, a capacitor, a digital circuit board, a first switch, a second switch and a third switch. The processing cavity comprises a processing cavity shell, an infrared lamp, an ultraviolet lamp, a sample table, a low-temperature thermocouple probe and an isolating baffle. The deep ultraviolet optical film processing device has the cleaning function of the ultraviolet lamp and the heating function of the infrared lamp simultaneously, can quickly and efficiently remove organic pollutant and moisture attached to the inside and the surface of deep ultraviolet optical films, and accordingly overcomes problems of secondary pollution and low efficiency which are caused in use of existing processing devices adopting the conventional ultraviolet cleaning technology and the low-temperature annealing technology independently or respectively.

Description

A deep ultraviolet optical thin film processing device

technical field

The invention relates to the application field of deep ultraviolet optical technology, in particular to a deep ultraviolet optical thin film processing device.

Background technique

In recent years, deep ultraviolet optical applications represented by ArF excimer lasers and free electron lasers with wavelengths below 200nm have received increasing attention and achieved considerable development. In particular, the ArF excimer 193nm laser has achieved great success in many fields including fine microprocessing of materials, deep ultraviolet lithography, material processing, laser marking, etc., excimer laser medical treatment, and scientific research. Widely and important applications, the research on deep ultraviolet optical related technologies has great social and economic value. The continuous development of deep ultraviolet laser optical systems and applications poses new challenges to the performance and long-term stability requirements of deep ultraviolet optical thin film components. The fundamental problem facing the research of deep ultraviolet optical thin films is that because the deep ultraviolet band is close to the forbidden band of most dielectric materials, the existence of intrinsic absorption, impurity absorption, defect absorption, etc. makes only a very small amount of dielectric materials meet the needs of deep ultraviolet thin film applications. . These minor amounts of materials include oxides Al ₂ O ₃ , SiO ₂ , fluorides MgF ₂ , LaF ₃ , AlF _{3 ,} and the like. The limitation of film material selection further brings constraints on the preparation process of deep ultraviolet optical thin films, such as for fluoride, in order to avoid serious absorption caused by the mismatch of stoichiometric ratio of deep ultraviolet optical thin films, and the stress caused by high temperature substrate For large and other problems, usually only the hot boat evaporation preparation process can be selected, and the temperature of the substrate is low. Using this heat-boat evaporation preparation process with a lower substrate temperature, a deep ultraviolet optical film with little absorption can be obtained, but at the same time, the internal structure of the optical film is not dense enough, and the surface of the optical film is rough. Therefore, the deep ultraviolet optical film prepared by the heat boat evaporation process at a lower substrate temperature can meet the application requirements well in the initial stage of application, but as the application time increases, due to the insufficient internal structure of the optical film and the Due to the adsorption effect on the pollutants in the application environment caused by the rough surface of the optical film, the performance of the deep ultraviolet optical film will soon decline. Studies have shown that the degradation of the performance of this deep ultraviolet optical film is concentrated in the absorption of organic pollutants and water vapor inside and on the surface of the deep ultraviolet optical film, resulting in a significant increase in the absorption of the deep ultraviolet optical film. In this regard, researchers have tried effective methods to remove organic pollutants and water vapor adsorbed inside and on the surface of optical films, and found that irradiating deep ultraviolet optical films with UV light is an effective method.

The basic principle of ultraviolet light cleaning is the photosensitive oxidation of organic compounds. The detailed mechanism is: UV light source emits high-energy photons with wavelengths of 185nm and 254nm. When these high-energy photons act on the surface of the object to be cleaned, due to most carbon Hydrogen compounds have a strong absorption capacity for ultraviolet light with a wavelength of 185nm, and are decomposed into ions, free atoms, excited molecules and neutrons after absorbing the energy of ultraviolet light with a wavelength of 185nm. In addition, oxygen molecules in the air will also produce ozone and atomic oxygen after absorbing ultraviolet light with a wavelength of 185nm. Ozone also has a strong absorption effect on ultraviolet light with a wavelength of 254nm. Therefore, ozone is further decomposed into atomic oxygen and oxygen. The atomic oxygen produced by the above process is extremely active and has strong oxidizing properties. Under its action, the decomposition products of carbon and hydrocarbons on the surface of the object can be combined into volatile gases, such as carbon dioxide and water vapor. out of the surface, thereby thoroughly removing carbon and organic pollutants adhering to the surface.

Compared with other traditional physical and chemical cleaning technologies, UV cleaning has remarkable features, including: it can remove carbon and organic pollutants on the surface more thoroughly; it is a non-contact cleaning method and will not form new pollution; the process is simple , high speed, high efficiency, high reliability, and the uniformity of surface cleaning treatment is very good. The above characteristics are very suitable for the cleaning and treatment of the surface of deep ultraviolet optical film. However, many experiments have shown that the effect of ultraviolet light cleaning on the treatment of water vapor inside and on the surface of deep ultraviolet optical films is not very satisfactory. Because experiments have shown that the water vapor content inside and on the surface of the deep ultraviolet optical film basically does not change before and after ultraviolet light cleaning. Therefore, in order to remove the water vapor in the deep ultraviolet optical film, before or after ultraviolet light cleaning, it is usually necessary to perform a low-temperature annealing treatment on the deep ultraviolet optical film. This low-temperature annealing method can remove the water vapor in the deep ultraviolet optical film. However, this low-temperature annealing speed is slow and usually takes a long time. Therefore, new pollution adsorption problems are likely to appear in this process, and the efficiency lower.

The basic structure of an existing ultraviolet light cleaning device is shown in FIG. 1 , which is also the most common structure of an ultraviolet light cleaning device at present. The currently known ultraviolet light cleaning device mainly includes several parts such as ultraviolet light lamp 23, transformer 11, capacitor 12, lampshade cavity, exhaust, and protection circuit. Among them, the ultraviolet light lamp 23 is the most important part, and generally adopts a high-pressure Hg lamp or a halogen lamp, and needs to select appropriate parameters such as spectrum, power, and structural shape according to specific application requirements.

Contents of the invention

In order to solve the unsatisfactory effect of ultraviolet cleaning in the prior art on the water vapor inside and on the surface of the deep ultraviolet optical film and the problem that new pollution adsorption may occur during this process, and the problem of low efficiency, a method of the present invention The deep ultraviolet optical thin film processing device will solve the problems existing in the prior art.

A deep ultraviolet optical film processing device, the device includes: a control module and a processing chamber; the control module sets and controls the working state of the processing chamber, and the processing chamber processes the film; the control module includes: a transformer, capacitor, digital circuit board, first switch, second switch and third switch; the processing chamber includes: cavity, infrared lamp, ultraviolet lamp, sample stage, low-temperature thermocouple probe and isolation baffle; one end of the transformer It is connected in series with the capacitor and the ultraviolet lamp, the ultraviolet lamp is fixed on the upper end of the cavity, and the other end of the transformer is connected in series with the power supply, which is controlled by the first switch; Switch control, the low-temperature thermocouple probe is placed under the sample stage and in contact with the sample, the sample stage is fixed in the middle of the cavity; the infrared lamp is fixed at the lower end of the cavity, the digital circuit board is connected to the infrared lamp, and the third switch Control, the two ends of the isolation baffle are connected with the left and right sides of the cavity.

The beneficial effects of the present invention are: the device has both the cleaning function of the ultraviolet lamp and the heating function of the infrared lamp, can quickly and efficiently remove the organic pollutants and water vapor components adsorbed on the inside and surface of the deep ultraviolet optical film, and overcomes the previous single or separate cleaning by ultraviolet light The problems of secondary pollution and low efficiency in technology and low temperature annealing technology.

Description of drawings

Fig. 1 is a schematic diagram of the structure of the current technology ultraviolet light cleaning device.

Fig. 2 is a schematic structural diagram of a deep ultraviolet optical film post-processing device according to the present invention.

As shown in the figure: 11, transformer, 12, capacitor, 13, digital circuit board, 14, first switch, 15, second start-up, 16, third switch, 21, processing chamber, 22, infrared lamp, 23, ultraviolet lamp , 24, sample stage, 25, low temperature thermocouple probe, 26, isolation baffle.

Detailed ways

As shown in Figure 2, a deep ultraviolet optical thin film processing device, the device includes: a control module 1 and a processing chamber 2; the control module 1 sets and controls the working state of the processing chamber 2, and the processing chamber 2 controls the film Processing; the control module 1 includes: a transformer 11, a capacitor 12, a digital circuit board 13, a first switch 14, a second switch 15 and a third switch 16; the processing chamber 2 includes: a cavity 21, an infrared lamp 22 , UV lamp 23, sample stage 24, low temperature thermocouple probe 25 and isolation baffle 26; one end of the transformer 11 is connected in series with the capacitor 12 and the UV lamp 23, the UV lamp 23 is fixed on the upper end of the cavity, and the other end of the transformer 11 It is connected in series with the power supply and controlled by the first switch 14; the digital circuit board 13 is connected to the sample stage 24, the low-temperature thermocouple probe 25 and the power supply, and is controlled by the second switch 15. The low-temperature thermocouple probe 25 is placed under the sample stage 24, And in contact with the sample, the sample stage 24 is fixed in the middle of the cavity; the infrared lamp 22 is fixed at the lower end of the cavity, the digital circuit board 13 is connected with the infrared lamp 22, controlled by the third switch 16, and the two ends of the isolation baffle 26 Connect with the left and right sides of the cavity.

The device of the invention has two functions of ultraviolet light cleaning and infrared heating respectively, which can be selected and switched by function buttons. During ultraviolet cleaning, the output power and irradiation time of the ultraviolet lamp 23 can be set. During infrared heating, the output power of the infrared lamp 22 can also be set, and the temperature of the sample heating can be controlled by a set of temperature control circuit to realize constant temperature heating.

The control module includes the transformer 11 required by the ultraviolet lamp 23, the capacitor 12, the low-temperature thermocouple probe 25 required by the infrared lamp 22, and the digital circuit board 13, etc. Among them, the transformer 11 adopts a magnetic flux leakage transformer, and its primary winding selects 220V input, and the output of the secondary winding can be adjusted between 220v and 3000V; it adopts a double capacitor 12 connection structure; by changing the variable voltage range and the parameters of the capacitor 12, the ultraviolet lamp 23 is realized. Tuning of output power. Both the ultraviolet lamp circuit and the infrared lamp circuit are equipped with insulation resistance and safety protection switch. The digital circuit board 13 is used to set and control the working state of the processing device.

The shell of the cavity 21 is made of stainless steel plate or polished Al plate, which can effectively reflect ultraviolet light and infrared light. The size of the cavity is about 50cm*50cm*40cm length*width*height, and the upper end can be opened and closed freely.

The infrared lamp 22 adopts a milky white quartz tube with a heating wire wound inside. This milky white quartz tube infrared heater has no coating, no pollution, no harmful radiation, good chemical stability, high temperature resistance, various shapes, long-term use without deformation, good thermal stability, and heating temperature can be selected. The voltage of the infrared lamp 22 is 220V, the outer diameter is 30mm, the length is 400mm, and the power is between 300-6000W. Its infrared radiation spectrum has an emission efficiency greater than 0.85 between 2-5 μm.

The ultraviolet lamp 23 adopts a double-wavelength high-pressure Hg lamp with a row tube, and the row tube adopts a high-permeability quartz tube with an outer diameter of 30mm, a length of 300mm, a width of 200mm, and a power of 150W. The emission spectrum contains dual UV wavelengths of 185nm and 254nm with low infrared radiation.

The sample stage 24 is made of glass-ceramics, and when heated by infrared rays, the infrared rays located at the lower end of the cavity can radiate into the sample through the glass-ceramics. A small hole is opened at the bottom of the center of the glass-ceramic plate, and a low-temperature thermocouple probe 25 is placed. The low-temperature thermocouple probe 25 just touches the bottom of the sample from below, so that the temperature of the sample can be accurately detected, and the real-time measurement of the sample temperature in the infrared heating constant temperature experiment can be realized. monitor. Using the temperature control system, the temperature of the sample can be controlled between 100-200 degrees.

The isolation baffle 26 is made of polished Al alloy, which is highly reflective to both ultraviolet and infrared. Its position can be changed, and when infrared heating, isolating baffle 26 is placed between sample table 24 and ultraviolet lamp 23, is used for isolating the radiation of infrared to ultraviolet lamp 23, when ultraviolet lamp 23 cleans, isolating baffle 26 is placed on the sample stage 24, and then the sample is placed on it, thereby isolating the radiation of ultraviolet light to the infrared lamp 22.

Claims (6)

1. deep ultraviolet optics film device, it is characterized in that: this device comprises: control module (1) and process chamber (2); Said control module (1) is set and is controlled the duty of process chamber (2), and process chamber (2) is handled deep ultraviolet optics film; Said control module (1) comprising: transformer (11), electric capacity (12), digital circuit board (13), first switch (14), second switch (15) and the 3rd switch (16); Said process chamber (2) comprising: cavity (21), infrared lamp (22), ultraviolet lamp (23), sample stage (24), low temperature thermocouple probe (25) and partitions (26); Said transformer (11) one ends are connected with electric capacity (12) and ultraviolet lamp (23), and ultraviolet lamp (23) is fixed on cavity (21) upper end, and transformer (11) other end is connected with power supply, is controlled by first switch (14); Said digital circuit board (13) is connected with power supply with low temperature thermocouple probe (25), and by second switch (15) control, low temperature thermocouple probe (25) is positioned under the sample stage (24), and contacts with sample, and said sample stage (24) is fixed in the middle of the cavity (21); Said infrared lamp (22) is fixed on cavity (21) lower end, and digital circuit board (13) is connected with infrared lamp (22), and by the 3rd switch (16) control, partitions (26) two ends are connected with cavity (21) left and right sides.

2. a kind of deep ultraviolet optics film device as claimed in claim 1 is characterized in that: said transformer (11) adopts leakage transformer, and its elementary winding is selected the 220V input, and secondary windings is output as between 220v～3000V.

3. a kind of deep ultraviolet optics film device as claimed in claim 1 is characterized in that: said cavity (21) shell adopts corrosion resistant plate or polishing Al plate to process.

4. a kind of deep ultraviolet optics film device as claimed in claim 1 is characterized in that: said cavity (21) upper end can upwards be turned over and open.

5. a kind of deep ultraviolet optics film device as claimed in claim 1; It is characterized in that: said sample stage (24) adopts devitrified glass to process; Perforate in the middle of the sample stage (24), low temperature thermocouple probe (25) is from perforate contact sample bottom, through the real-time measurement to the sample bottom temp; Reach control, and then the sample heating-up temperature is accurately controlled the infrared lamp duty.

6. a kind of deep ultraviolet optics film device as claimed in claim 1 is characterized in that: said partitions (26) adopts surface finish Al alloy.

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