[go: up one dir, main page]

CN102419480B - Two-stage beam shrinkage system based on photonic crystal resonant cavity and manufacturing method for two-stage beam shrinkage system - Google Patents

Two-stage beam shrinkage system based on photonic crystal resonant cavity and manufacturing method for two-stage beam shrinkage system Download PDF

Info

Publication number
CN102419480B
CN102419480B CN 201110452806 CN201110452806A CN102419480B CN 102419480 B CN102419480 B CN 102419480B CN 201110452806 CN201110452806 CN 201110452806 CN 201110452806 A CN201110452806 A CN 201110452806A CN 102419480 B CN102419480 B CN 102419480B
Authority
CN
China
Prior art keywords
photonic crystal
resonant cavity
waveguide
strontium titanates
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201110452806
Other languages
Chinese (zh)
Other versions
CN102419480A (en
Inventor
王维彪
梁静秋
梁中翥
周建伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changchun Institute of Optics Fine Mechanics and Physics of CAS
Original Assignee
Changchun Institute of Optics Fine Mechanics and Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changchun Institute of Optics Fine Mechanics and Physics of CAS filed Critical Changchun Institute of Optics Fine Mechanics and Physics of CAS
Priority to CN 201110452806 priority Critical patent/CN102419480B/en
Publication of CN102419480A publication Critical patent/CN102419480A/en
Application granted granted Critical
Publication of CN102419480B publication Critical patent/CN102419480B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Optical Integrated Circuits (AREA)

Abstract

本发明涉及一种基于光子晶体谐振腔的两级缩束系统及制作方法,该系统由W7型光子晶体波导、光子晶体谐振腔、W1型光子晶体波导和纳米线波导顺序密接排列构成;光子晶体谐振腔采用在光子晶体中加入点缺陷构成,并且光子晶体谐振腔与W7型光子晶体波导衔接处分布一行介质柱,该行介质柱构成耦合区;光子晶体谐振腔与W1型光子晶体波导衔接处,且与点缺陷对应位置分布有一个或多个耦合介质柱;整个系统集成在一个基底上。本发明采用两级压缩结构,使光束经过一级压缩和二级压缩两次压缩,从而达到更高的压缩比以及更小的出射光斑,耦合效率高,光信息在器件间传播的损耗低;另外相对于渐变波导,大大的减小了器件的体积,提高了器件的集成度。

Figure 201110452806

The invention relates to a two-stage beam shrinkage system based on a photonic crystal resonant cavity and a manufacturing method thereof. The system is composed of a W7-type photonic crystal waveguide, a photonic crystal resonant cavity, a W1-type photonic crystal waveguide and a nanowire waveguide arranged in close order; the photonic crystal The resonant cavity is formed by adding point defects in the photonic crystal, and a row of dielectric columns is distributed at the junction of the photonic crystal resonator and the W7-type photonic crystal waveguide, and the row of dielectric columns constitutes the coupling area; the junction of the photonic crystal resonator and the W1-type photonic crystal waveguide , and one or more coupling medium columns are distributed corresponding to the point defects; the whole system is integrated on a substrate. The present invention adopts a two-stage compression structure, so that the light beam is compressed twice by one-stage compression and two-stage compression, so as to achieve a higher compression ratio and a smaller exit spot, high coupling efficiency, and low loss of optical information propagating between devices; In addition, compared with the graded waveguide, the volume of the device is greatly reduced, and the integration degree of the device is improved.

Figure 201110452806

Description

基于光子晶体谐振腔的两级缩束系统及其制作方法Two-stage beam shrinkage system based on photonic crystal resonator and its manufacturing method

技术领域:Technical field:

本发明属于光学技术领域,涉及一种微结构光子晶体元件,具体地说是一种基于光子晶体谐振腔的两级缩束系统及其制作方法。The invention belongs to the field of optical technology, and relates to a microstructure photonic crystal element, in particular to a two-stage beam shrinkage system based on a photonic crystal resonant cavity and a manufacturing method thereof.

背景技术:Background technique:

光子晶体是由具有不同介电常数的物质,在空间周期性排列形成的人工微结构。近年来,基于光子晶体材料的光电功能器件得到了广泛的关注,利用光子晶体的光子禁带和光子局域特性,光子晶体波导、滤波器、光开关、耦合器等光子晶体光电器件已见诸报道,为未来大规模光电集成以及全光网络的实现打下了良好的基础。Photonic crystals are artificial microstructures formed by substances with different dielectric constants arranged periodically in space. In recent years, optoelectronic functional devices based on photonic crystal materials have received extensive attention. Photonic crystal optoelectronic devices such as photonic crystal waveguides, filters, optical switches, and couplers have been used The report has laid a good foundation for the realization of large-scale optoelectronic integration and all-optical networks in the future.

光子晶体是由不同折射率的介质周期性排列而成的人工微结构,电磁波在其中传播时由于布拉格散射,电磁波会受到调制而形成能带结构,这种能带结构叫做光子能带。光子能带之间可能出现带隙,即光子带隙。由于带隙中没有任何态存在,频率落在带隙中的电磁波被禁止传播。如果在光子晶体中引入介电缺陷或介电无序,会出现光子局域现象,在光子带隙中将形成相应的缺陷能级,特定频率的光可在这个缺陷能级中出现。通过在完整的二维光子晶体中引入缺陷,破坏光子禁带,引入缺陷态,可用来制作二维光子晶体功能器件。在二维光子晶体中引入线缺陷即去掉数排介质柱,那么相应频率的电磁波就只能在这个线缺陷中传播,离开线缺陷就会迅速衰减,可以通过在二维光子晶体中引入线缺陷来制作光子晶体波导。区别于传统光学波导的内反射原理,光子晶体波导基础原理是不同方向缺陷模共振匹配,故理论上光子晶体波导不受转角限制,弯曲损耗极小,可以用于制作低损耗转弯波导。Photonic crystals are artificial microstructures formed by periodic arrangements of media with different refractive indices. When electromagnetic waves propagate in them due to Bragg scattering, the electromagnetic waves will be modulated to form an energy band structure. This energy band structure is called photonic energy band. There may be a band gap between the photon energy bands, that is, the photonic band gap. Since no state exists in the bandgap, electromagnetic waves whose frequency falls in the bandgap are forbidden to propagate. If a dielectric defect or dielectric disorder is introduced into the photonic crystal, photon localization will occur, and a corresponding defect energy level will be formed in the photonic band gap, and light of a specific frequency can appear in this defect energy level. By introducing defects into the complete two-dimensional photonic crystal, destroying the photonic band gap and introducing defect states, it can be used to make two-dimensional photonic crystal functional devices. Introducing a line defect into a two-dimensional photonic crystal is to remove several rows of dielectric columns, then the electromagnetic wave of the corresponding frequency can only propagate in this line defect, and the line defect will rapidly decay when it leaves the line defect. to fabricate photonic crystal waveguides. Different from the internal reflection principle of traditional optical waveguides, the basic principle of photonic crystal waveguides is the resonance matching of defect modes in different directions. Therefore, theoretically, photonic crystal waveguides are not limited by the rotation angle, and the bending loss is extremely small, which can be used to make low-loss turning waveguides.

然而想要将现有的光子晶体器件集成在同一基片上却面临着器件间通光宽度不同以及耦合效率低下等诸多困难,故能在连接功能器件的同时,实现对光束高效的微压缩及微聚焦的缩束系统对多光子晶体功能器件的集成有着极为重要的意义。缩束系统的主要技术参数是光斑大小、压缩率和传输效率。压缩率是指入射光束和出射光束半高宽的比值,其数值根据设计要求越大越好。而传输效率则是出射端和入射端光强的比值,传输效率的高低直接影响着系统的效率。渐变波导可以实现器件连接并对光束进行控制,然而,渐变波导宽度的变化会导致严重的反射损失及模式失配,从而影响传输效率。所以,渐变波导的渐变角通常比较小而长度较长,难以缩小体积并应用于光电集成及全光网络中。为了减小宽度变化带来的损耗,有的研究提出引入抛物面透镜或伽利略望远镜光学系统来增大渐变角,以便能在较小的长度下完成光束宽度的控制。但同时光学器件的引入会使得渐变波导的结构复杂化,降低器件的集成度。另外,在光通信波段光子晶体器件尺度即亚微米尺度下,几何光学器件的衍射效应非常明显,限制了上述两种方法的应用。所以,迫切需要一种能实现亚微米尺度下对光束进行调节,并具有高传输效率的缩束系统以实现光信息在器件间低损耗耦合传播。However, if you want to integrate existing photonic crystal devices on the same substrate, you will face many difficulties such as different light widths between devices and low coupling efficiency. Focused beam shrinking system is of great significance to the integration of multiphotonic crystal functional devices. The main technical parameters of the attenuator system are spot size, compression ratio and transmission efficiency. The compression rate refers to the ratio of the half-height width of the incident beam to the outgoing beam, and the larger the value, the better according to the design requirements. The transmission efficiency is the ratio of the light intensity at the output end to the input end, and the transmission efficiency directly affects the efficiency of the system. The graded waveguide can realize device connection and control the beam, however, the change of the width of the graded waveguide will cause serious reflection loss and mode mismatch, thereby affecting the transmission efficiency. Therefore, the tapered angle of the tapered waveguide is usually relatively small and the length is long, so it is difficult to reduce the volume and apply it to optoelectronic integration and all-optical networks. In order to reduce the loss caused by the width change, some studies propose to introduce a parabolic lens or a Galilean telescope optical system to increase the gradient angle so that the beam width can be controlled at a smaller length. But at the same time, the introduction of optical devices will complicate the structure of the graded waveguide and reduce the integration of the device. In addition, at the sub-micron scale of photonic crystal devices in the optical communication band, the diffraction effect of geometric optical devices is very obvious, which limits the application of the above two methods. Therefore, there is an urgent need for a beam shrinkage system that can adjust the beam at the submicron scale and has high transmission efficiency to achieve low-loss coupling transmission of optical information between devices.

发明内容:Invention content:

本发明要解决的一个技术问题是提供一种能实现亚微米尺度下对光束进行调节,并具有高传输效率,能够实现光信息在器件间低损耗耦合传播的基于光子晶体谐振腔的两级缩束系统。A technical problem to be solved by the present invention is to provide a two-stage contraction system based on photonic crystal resonators that can adjust the light beam at the submicron scale, has high transmission efficiency, and can realize low-loss coupling transmission of optical information between devices. beam system.

为了解决上述技术问题,本发明的基于光子晶体谐振腔的两级缩束系统由W7型光子晶体波导、光子晶体谐振腔、W1型光子晶体波导和纳米线波导顺序密接排列构成;光子晶体谐振腔采用在光子晶体中加入点缺陷构成,并且光子晶体谐振腔与W7型光子晶体波导衔接处分布一行介质柱,该行介质柱构成耦合区;光子晶体谐振腔与W1型光子晶体波导衔接处,且与点缺陷对应位置分布有一个或多个耦合介质柱;整个系统集成在一个基底上。In order to solve the above-mentioned technical problems, the two-stage beam shrinkage system based on the photonic crystal resonator of the present invention is composed of a W7 type photonic crystal waveguide, a photonic crystal resonator, a W1 type photonic crystal waveguide and a nanowire waveguide arranged in close order; the photonic crystal resonator It is formed by adding point defects in the photonic crystal, and a row of dielectric pillars is distributed at the junction of the photonic crystal resonator and the W7-type photonic crystal waveguide, and the row of dielectric pillars constitutes the coupling area; the junction of the photonic crystal resonator and the W1-type photonic crystal waveguide, and One or more coupling medium columns are distributed at the corresponding positions of the point defects; the whole system is integrated on a substrate.

构成W7型光子晶体波导、光子晶体谐振腔及W1型光子晶体波导主体结构的介质柱半径为r。The radius of the dielectric column constituting the main structure of the W7-type photonic crystal waveguide, the photonic crystal resonant cavity and the W1-type photonic crystal waveguide is r.

所述W7型光子晶体波导的缺陷区由半径为r1的介质柱构成,r1大于或小于r。The defect region of the W7-type photonic crystal waveguide is composed of a dielectric column with a radius of r1 , and r1 is larger or smaller than r.

所述光子晶体谐振腔中的点缺陷由半径为r3的一个或多个介质柱构成,r3大于或小于r。The point defect in the photonic crystal resonant cavity is composed of one or more dielectric columns with a radius r3 , where r3 is larger or smaller than r.

所述点缺陷也可为光子晶体中去掉一个或多个介质柱形成的空隙。The point defect can also be a gap formed by removing one or more dielectric pillars in the photonic crystal.

所述光子晶体谐振腔耦合区介质柱的半径为r2,r2大于或小于r。The radius of the dielectric column in the coupling region of the photonic crystal resonator cavity is r 2 , and r 2 is larger or smaller than r.

所述光子晶体谐振腔的耦合介质柱半径为r4,r4大于或小于r。The radius of the coupling medium column of the photonic crystal resonator is r 4 , and r 4 is larger or smaller than r.

本发明中W7型光子晶体波导、W1型光子晶体波导和纳米线波导的通光宽度不同,尤其W7型光子晶体波导和纳米线波导间通光宽度相差较大。而对于通信波段的W1型光子晶体波导,其通光宽度为几百个纳米,与纳米线波导通光宽度较为接近,故本发明采用W1型光子晶体波导和光子晶体谐振腔作为中介,将W7型光子晶体波导和纳米线波导连接起来,即采用两次压缩的方式实现对光束宽度的控制。其中一级压缩部分由W7型光子晶体波导、光子晶体谐振腔和W1型光子晶体波导构成,二级压缩部分由W1型光子晶体波导和纳米线波导构成。一、二级缩束之间由W1型光子晶体波导连接。由于W7型光子晶体波导、W1型光子晶体波导和纳米线波导的通光宽度依次减小,故只要实现三者之间的高效耦合,即可实现对光束宽度的微控制。In the present invention, the optical widths of the W7-type photonic crystal waveguide, the W1-type photonic crystal waveguide and the nanowire waveguide are different, especially the difference in the optical width between the W7-type photonic crystal waveguide and the nanowire waveguide is relatively large. For the W1 type photonic crystal waveguide in the communication band, its optical width is several hundred nanometers, which is relatively close to the optical width of the nanowire waveguide. Therefore, the present invention uses the W1 type photonic crystal waveguide and the photonic crystal resonator as an intermediary, and the W7 The photonic crystal waveguide is connected with the nanowire waveguide, that is, the control of the beam width is realized by two times of compression. The first-stage compression part is composed of a W7-type photonic crystal waveguide, a photonic crystal resonator and a W1-type photonic crystal waveguide, and the second-stage compression part is composed of a W1-type photonic crystal waveguide and a nanowire waveguide. The primary and secondary constricted beams are connected by a W1-type photonic crystal waveguide. Since the light-passing widths of the W7-type photonic crystal waveguide, the W1-type photonic crystal waveguide, and the nanowire waveguide decrease sequentially, as long as the efficient coupling between the three is realized, the micro-control of the beam width can be realized.

本发明的优点是采用两级压缩结构,使光束经过一级压缩和二级压缩两次压缩,从而达到更高的压缩比以及更小的出射光斑。特别是采用光子晶体谐振腔作为中介,将W7型光子晶体波导与W1型光子晶体波导连接,光子晶体谐振腔与W7型光子晶体波导衔接处分布一行作为耦合区的介质柱,光子晶体谐振腔与W1型光子晶体波导衔接处且与点缺陷对应位置分布有耦合介质柱,大大提高了耦合效率,光信息在器件间传播的损耗低。另外相对于渐变波导,本发明大大的减小了器件的体积,提高了器件的集成度。The invention has the advantage of adopting a two-stage compression structure, so that the light beam undergoes one-stage compression and two-stage compression twice, so as to achieve a higher compression ratio and a smaller exit spot. In particular, a photonic crystal resonator is used as an intermediary to connect the W7-type photonic crystal waveguide to the W1-type photonic crystal waveguide. A line of dielectric columns is distributed at the junction of the photonic crystal resonator and the W7-type photonic crystal waveguide as a coupling area. The photonic crystal resonator and the W1-type photonic crystal waveguide Coupling dielectric columns are distributed at the junction of the W1-type photonic crystal waveguide and corresponding to the point defect, which greatly improves the coupling efficiency, and the loss of optical information propagating between devices is low. In addition, compared with the graded waveguide, the invention greatly reduces the volume of the device and improves the integration of the device.

本发明要解决的另一个技术问题是提供一种基于光子晶体谐振腔的两级缩束系统的制作方法。Another technical problem to be solved by the present invention is to provide a manufacturing method of a two-stage beam shrinkage system based on a photonic crystal resonator.

为了解决上述技术问题,本发明的基于光子晶体谐振腔的两级缩束系统的制作方法通过在基底上制作钛酸锶介质柱阵列和钛酸锶纳米线波导形成缩束系统结构。In order to solve the above technical problems, the fabrication method of the photonic crystal resonator-based two-stage beam shrinkage system of the present invention forms a beam shrinkage system structure by fabricating strontium titanate dielectric column arrays and strontium titanate nanowire waveguides on the substrate.

具体制作过程如下:The specific production process is as follows:

第一步,制备划片所需的划片槽;The first step is to prepare the scribing groove required for scribing;

第二步,制备ICP刻蚀钛酸锶介质柱阵列和钛酸锶纳米线波导所需的光刻胶掩膜;The second step is to prepare the photoresist mask required for ICP etching strontium titanate dielectric column array and strontium titanate nanowire waveguide;

第三步,利用第二步制备的ICP光刻胶掩膜结构进行ICP刻蚀,制作基于光子晶体谐振腔的两级缩束系统主体结构;The third step is to use the ICP photoresist mask structure prepared in the second step to perform ICP etching to make the main structure of the two-stage beam shrinkage system based on the photonic crystal resonator;

第四步,对要求尺寸精度高于10nm的介质柱进行单独加工;The fourth step is to separately process the dielectric column that requires a dimensional accuracy higher than 10nm;

第五步,去除器件结构边缘区。The fifth step is to remove the edge region of the device structure.

第一步,制备划片所需的划片槽;The first step is to prepare the scribing groove required for scribing;

(A)对衬底硅上生长二氧化硅埋层的基底进行清洁处理;(A) cleaning the base of the silicon dioxide buried layer grown on the substrate silicon;

(B)在二氧化硅埋层上利用溶胶凝胶法制备一层钛酸锶薄膜;(B) Utilizing the sol-gel method to prepare a layer of strontium titanate thin film on the silicon dioxide buried layer;

(C)在钛酸锶薄膜上制作一层光刻胶膜;(C) making a photoresist film on the strontium titanate thin film;

(D)将步骤(C)制作完成的结构放入烘箱中前烘;(D) putting the completed structure of step (C) into an oven for drying;

(E)对光刻胶膜进行紫外曝光,得到与刻蚀划片槽所需光刻版相同的图形;(E) UV exposure is carried out to the photoresist film to obtain the same pattern as the photolithography plate required for etching the scribe groove;

(F)经过显影、坚膜,得到制作划片槽所需的光刻胶掩膜结构;(F) After developing and hardening the film, the photoresist mask structure required for making the scribe groove is obtained;

(G)对步骤(F)制作好的光刻胶掩膜结构进行ICP刻蚀,然后去掉光刻胶膜得到带有划片槽的划片结构;(G) carry out ICP etching to the photoresist mask structure that step (F) makes, then remove photoresist film and obtain the scribe structure with scribe groove;

第二步,制备ICP刻蚀钛酸锶介质柱阵列和钛酸锶纳米线波导所需的光刻胶掩膜;The second step is to prepare the photoresist mask required for ICP etching strontium titanate dielectric column array and strontium titanate nanowire waveguide;

(H)在步骤(G)制备好的带有划片槽的划片结构上制作一层光刻胶膜;(H) making a layer of photoresist film on the scribe structure with the scribe groove prepared in step (G);

(I)将步骤(H)制备完成的结构放入烘箱中前烘;(1) putting the structure prepared in step (H) into an oven before drying;

(J)对制备好的光刻胶膜进行电子束曝光;(J) Carrying out electron beam exposure to the prepared photoresist film;

(K)经过显影、坚膜,得到制作钛酸锶介质柱阵列和钛酸锶纳米线波导所需的ICP光刻胶掩膜结构;(K) After development and film hardening, the ICP photoresist mask structure required for making strontium titanate dielectric column arrays and strontium titanate nanowire waveguides is obtained;

第三步,利用第二步制备的ICP光刻胶掩膜结构进行ICP刻蚀,制作基于光子晶体谐振腔的两级缩束系统主体结构;The third step is to use the ICP photoresist mask structure prepared in the second step to perform ICP etching to make the main structure of the two-stage beam shrinkage system based on the photonic crystal resonator;

(L)对步骤(K)制作好的ICP光刻胶掩膜结构进行ICP刻蚀,得到钛酸锶介质柱阵列和钛酸锶纳米线波导;(L) performing ICP etching on the ICP photoresist mask structure prepared in step (K), to obtain strontium titanate dielectric column arrays and strontium titanate nanowire waveguides;

(M)将钛酸锶介质柱阵列和钛酸锶纳米线波导上的光刻胶去除,并清洗;(M) removing the photoresist on the strontium titanate dielectric column array and the strontium titanate nanowire waveguide, and cleaning;

第四步,对要求尺寸精度高于10nm的介质柱进行单独加工;The fourth step is to separately process the dielectric column that requires a dimensional accuracy higher than 10nm;

(N)在步骤(M)得到的结构上涂覆一层光刻胶作为保护层;(N) coating a layer of photoresist on the structure obtained in step (M) as a protective layer;

(O)对制备好的光刻胶进行光学曝光、显影,得到光刻胶掩膜结构,将需要加工的钛酸锶介质柱所在区域暴露出来;(0) Optically exposing and developing the prepared photoresist to obtain a photoresist mask structure, exposing the area where the strontium titanate dielectric column to be processed is located;

(P)利用FIB工艺对需要加工的钛酸锶介质柱进行加工使其达到所需尺寸,去除光刻胶;(P) process the strontium titanate dielectric column to be processed by using the FIB process to make it reach the required size, and remove the photoresist;

第五步,去除器件结构边缘区;The fifth step is to remove the edge region of the device structure;

(Q)在步骤(P)得到的器件结构表面涂覆PMMA层;(Q) coating the PMMA layer on the device structure surface that step (P) obtains;

(R)对PMMA层进行同步辐射X射线曝光、显影,在器件结构上制作一个保护层;(R) Carrying out synchrotron radiation X-ray exposure and development to the PMMA layer, and making a protective layer on the device structure;

(S)按照划片槽划片,得到由钛酸锶介质柱阵列和钛酸锶纳米线波导构成的基于光子晶体谐振腔的两级缩束系统器件主体结构;(S) Scribing according to the scribing groove to obtain the main structure of the two-stage beam shrinking system device based on a photonic crystal resonator composed of a strontium titanate dielectric column array and a strontium titanate nanowire waveguide;

(T)将步骤(S)得到的基于光子晶体谐振腔的两级缩束系统器件结构放入磨片机中,分别用不同的研磨液或抛光液进行侧面研磨及抛光,去除边缘区并使器件结构侧面平整。(T) put the device structure of the two-stage attenuation system based on the photonic crystal resonator obtained in step (S) into a grinding machine, and use different grinding fluids or polishing fluids for side grinding and polishing, remove the edge area and make The side of the device structure is flat.

本发明应用电子束曝光加ICP刻蚀和FIB刻蚀方法加工,使所述光子晶体两级缩束系统有加工精度高、聚焦效果好,表面粗糙度低等优点,解决了因粗糙度偏高带来的散射大的问题。将同步辐射X射线光刻技术与研磨、抛光技术相结合进行边缘区去除及侧面修整,可以在去除边缘区的过程中有效保护多级二维光子晶体缩束系统结构。The invention applies electron beam exposure plus ICP etching and FIB etching methods to process, so that the photonic crystal two-stage shrinkage system has the advantages of high processing precision, good focusing effect, low surface roughness, etc., and solves the problems caused by high roughness. The problem of large scattering is brought about. Combining synchrotron radiation X-ray lithography technology with grinding and polishing technology for edge area removal and side trimming can effectively protect the multi-level two-dimensional photonic crystal beam shrinkage system structure during the process of edge area removal.

附图说明:Description of drawings:

下面结合附图和具体实施方式对本发明作进一步详细说明。The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

图1是本发明的基于光子晶体谐振腔的两级缩束系统主体平面示意图。FIG. 1 is a schematic plan view of a main body of a two-stage beam shrinkage system based on a photonic crystal resonator according to the present invention.

图2是二级压缩部分示意图。Figure 2 is a schematic diagram of the two-stage compression section.

图3为刻蚀划片槽所需光刻版示意图。FIG. 3 is a schematic diagram of a photolithography plate required for etching a scribe groove.

图4a~4g为制备划片所需的划片槽工艺过程示意图。4a-4g are schematic diagrams of the process for preparing scribe grooves required for scribing.

图5a~5f为制备钛酸锶介质柱的工艺过程示意图。5a-5f are schematic diagrams of the process for preparing the strontium titanate medium column.

图6a~6f为加工要求尺寸精度高于10nm的介质柱的工艺过程示意图。6a to 6f are schematic diagrams of the process for processing dielectric columns that require a dimensional accuracy higher than 10 nm.

图7a~7e为去除器件结构边缘区的工艺过程示意图。7a-7e are schematic diagrams of the process of removing the edge region of the device structure.

具体实施方式:Detailed ways:

如图1、2所示,本发明的基于光子晶体谐振腔的两级缩束系统由W7型光子晶体波导4、光子晶体谐振腔5、W1型光子晶体波导6和纳米线波导7顺序密接排列构成;光子晶体谐振腔5采用在光子晶体中加入点缺陷14构成,并且光子晶体谐振腔5与W7型光子晶体波导4衔接处分布一行介质柱13,该行介质柱构成耦合区;光子晶体谐振腔5与W1型光子晶体波导衔接处,且与点缺陷14对应位置分布有一个或多个耦合介质柱15;整个系统集成在一个基底上。As shown in Figures 1 and 2, the two-stage beam shrinkage system based on photonic crystal resonators of the present invention is arranged closely in sequence by a W7-type photonic crystal waveguide 4, a photonic crystal resonator 5, a W1-type photonic crystal waveguide 6, and a nanowire waveguide 7. Composition; the photonic crystal resonator 5 is formed by adding point defects 14 in the photonic crystal, and a row of dielectric columns 13 is distributed at the joint between the photonic crystal resonator 5 and the W7-type photonic crystal waveguide 4, and the row of dielectric columns constitutes a coupling area; the photonic crystal resonator One or more coupling medium pillars 15 are distributed at the connection between the cavity 5 and the W1-type photonic crystal waveguide, and corresponding to the point defects 14; the whole system is integrated on a substrate.

特征频率的电磁波(1550nm)从左侧W7型光子晶体波导入射,经过高品质光子晶体谐振腔的耦合作用,光束从W7型光子晶体波导耦合到W1型光子晶体波导,由于W1型光子晶体波导通光孔径尺寸小于W7型光子晶体波导,光束完成一级压缩。W1型光子晶体波导中的光束经过W1型光子晶体波导和纳米线波导的高效耦合,从通光孔径更小的纳米线波导出射,完成光束的二级压缩。The electromagnetic wave (1550nm) of the characteristic frequency is incident from the W7 photonic crystal waveguide on the left side. After the coupling effect of the high-quality photonic crystal resonator, the beam is coupled from the W7 photonic crystal waveguide to the W1 photonic crystal waveguide. Since the W1 photonic crystal waveguide is connected The size of the optical aperture is smaller than that of the W7 photonic crystal waveguide, and the light beam completes one-stage compression. The beam in the W1-type photonic crystal waveguide is efficiently coupled by the W1-type photonic crystal waveguide and the nanowire waveguide, and is emitted from the nanowire waveguide with a smaller optical aperture to complete the secondary compression of the beam.

W7型光子晶体波导、W1型光子晶体波导和纳米线波导的通光宽度不同,尤其W7型光子晶体波导和纳米线波导间通光宽度相差较大。而对于通信波段的W1型光子晶体波导,其通光宽度为几百个纳米,与纳米线波导通光宽度较为接近,故本发明采用W1型光子晶体波导和光子晶体谐振腔作为中介,将W7型光子晶体波导和纳米线波导连接起来,即采用两次压缩的方式实现对光束宽度的控制。两级光子晶体压缩系统由一级压缩和二级压缩两部分组成,其中一级压缩由W7型光子晶体波导、光子晶体谐振腔和W1型光子晶体波导构成,二级压缩由W1型光子晶体波导和纳米线波导构成。一、二级缩束之间由W1型光子晶体波导连接。由于W7型光子晶体波导、W1型光子晶体波导和纳米线波导的通光宽度依次减小,故只要实现三者之间的高效耦合,即可实现对光束宽度的微控制。The optical widths of W7-type photonic crystal waveguide, W1-type photonic crystal waveguide and nanowire waveguide are different, especially the difference in optical width between W7-type photonic crystal waveguide and nanowire waveguide is large. For the W1 type photonic crystal waveguide in the communication band, its optical width is several hundred nanometers, which is relatively close to the optical width of the nanowire waveguide. Therefore, the present invention uses the W1 type photonic crystal waveguide and the photonic crystal resonator as an intermediary, and the W7 The photonic crystal waveguide is connected with the nanowire waveguide, that is, the control of the beam width is realized by two times of compression. The two-stage photonic crystal compression system consists of two parts: one-stage compression and two-stage compression. The one-stage compression consists of W7 photonic crystal waveguide, photonic crystal resonator and W1 photonic crystal waveguide, and the second stage compression consists of W1 photonic crystal waveguide. and nanowire waveguides. The primary and secondary constricted beams are connected by a W1-type photonic crystal waveguide. Since the light-passing widths of the W7-type photonic crystal waveguide, the W1-type photonic crystal waveguide, and the nanowire waveguide decrease sequentially, as long as the efficient coupling between the three is realized, the micro-control of the beam width can be realized.

所述构成W7型光子晶体波导4、光子晶体谐振腔5及W1型光子晶体波导6主体结构的介质柱11半径为r。光子晶体谐振腔5与W1型光子晶体波导4衔接处分布一行半径为r2的耦合区介质柱13;光子晶体谐振腔中的点缺陷14由一个半径为r3的介质柱构成;光子晶体谐振腔5与W1型光子晶体波导衔接处,且与点缺陷14对应位置分布有一个耦合介质柱15,耦合介质柱半径为r4;纳米线波导宽度W=140nm,光子晶体谐振腔中的点缺陷14与纳米线波导7间距离d=1.05μm.The radius of the dielectric pillar 11 constituting the main structure of the W7-type photonic crystal waveguide 4 , the photonic crystal resonant cavity 5 and the W1-type photonic crystal waveguide 6 is r. A row of coupling region dielectric pillars 13 with a radius of r2 is distributed at the junction of the photonic crystal resonator 5 and the W1-type photonic crystal waveguide 4; the point defect 14 in the photonic crystal resonator is composed of a dielectric pillar with a radius of r3 ; the photonic crystal resonator At the joint between the cavity 5 and the W1-type photonic crystal waveguide, and corresponding to the point defect 14, there is a coupling dielectric column 15, the radius of the coupling medium column is r4 ; the width of the nanowire waveguide W=140nm, the point defect in the photonic crystal cavity The distance between 14 and the nanowire waveguide 7 is d=1.05 μm.

当r=102nm,r1=51nm,r2=35nm,r3=75nm时,该缩束系统具有93.1%的出射效率。When r=102nm, r 1 =51nm, r 2 =35nm, r 3 =75nm, the beam shrinking system has an output efficiency of 93.1%.

当r=102nm,r1=51nm,r2=45nm,r3=r4=57nm时,出射效率可达91.87%;When r=102nm, r 1 =51nm, r 2 =45nm, r 3 =r 4 =57nm, the output efficiency can reach 91.87%;

当r=102nm,r1=51nm,r2=170nm,r3=r4=205nm时,出射效率为90.45%;When r=102nm, r 1 =51nm, r 2 =170nm, r 3 =r 4 =205nm, the output efficiency is 90.45%;

当r=102nm,r1=51nm,r2=55nm,r3=r4=235nm时,出射效率为85.6%;When r=102nm, r 1 =51nm, r 2 =55nm, r 3 =r 4 =235nm, the output efficiency is 85.6%;

当r=102nm,r1=51nm,r2=67nm,r3=r4=228nm时,出射效率为87.5%;When r=102nm, r 1 =51nm, r 2 =67nm, r 3 =r 4 =228nm, the output efficiency is 87.5%;

当r=102nm,r1=51nm,r2=40nm,r3=r4=80nm时,出射效率为92.32%;When r=102nm, r 1 =51nm, r 2 =40nm, r 3 =r 4 =80nm, the output efficiency is 92.32%;

当r=102nm,r1=51nm,r2=82nm,r3=r4=160nm时,出射效率为90.49%;When r=102nm, r 1 =51nm, r 2 =82nm, r 3 =r 4 =160nm, the output efficiency is 90.49%;

当r=102nm,r1=51nm,r2=105nm,r3=r4=82nm时,出射效率为85.68%;When r=102nm, r 1 =51nm, r 2 =105nm, r 3 =r 4 =82nm, the output efficiency is 85.68%;

当r=102nm,r1=51nm,r2=95nm,r3=r4=75nm时,出射效率为80.25%。When r=102nm, r 1 =51nm, r 2 =95nm, r 3 =r 4 =75nm, the output efficiency is 80.25%.

为了达到缩束的目的,本发明利用W7型光子晶体波导、高品质光子晶体谐振腔和W1型光子晶体波导的高效耦合,将光束进行压缩。制作过程中要求在完整的光子晶体结构中分别对W7型光子晶体波导缺陷区介质柱和光子晶体谐振腔的耦合区介质柱、构成点缺陷的介质柱和耦合介质柱的半径进行优化。其中,缩束系统主体上的介质柱均为钛酸锶介质柱,钛酸锶介质柱制备于基底上。钛酸锶介质柱为正方晶格结构,其晶格周期为510nm。钛酸锶介质柱高度h=220nm,基底的二氧化硅埋层102厚度h2=3μm,衬底硅101厚度h3=600μm。In order to achieve the purpose of shrinking the beam, the present invention utilizes the high-efficiency coupling of the W7 photonic crystal waveguide, the high-quality photonic crystal cavity and the W1 photonic crystal waveguide to compress the light beam. During the production process, it is required to optimize the radii of the W7-type photonic crystal waveguide defect region dielectric pillar, the coupling region dielectric pillar of the photonic crystal resonator, the dielectric pillar constituting point defects, and the coupling dielectric pillar in the complete photonic crystal structure. Wherein, the dielectric columns on the main body of the attenuation system are all strontium titanate dielectric columns, and the strontium titanate dielectric columns are prepared on the substrate. The strontium titanate dielectric column has a square lattice structure, and its lattice period is 510nm. The height of the strontium titanate dielectric column is h=220nm, the thickness of the buried silicon dioxide layer 102 of the substrate is h 2 =3 μm, and the thickness of the substrate silicon 101 is h 3 =600 μm.

图3为刻蚀划片槽所需光刻版示意图。光刻版为边长为A=2cm的正方形结构,正方形结构被分为16个正方形小单元,每个单元变长为a=0.5cm。所设计的二维光子晶体缩束系统制作于小单元内,经过划片一次曝光可得16组两级缩束系统。FIG. 3 is a schematic diagram of a photolithography plate required for etching a scribe groove. The photoresist plate is a square structure with a side length A=2cm, and the square structure is divided into 16 small square units, and the length of each unit becomes a=0.5cm. The designed two-dimensional photonic crystal beam reduction system is fabricated in a small unit, and 16 groups of two-stage beam reduction systems can be obtained after scribing and one exposure.

本发明的两级缩束系统制作于基底上,基底上排列有数十个至数百个钛酸锶介质柱和一个钛酸锶纳米线波导。基底由二氧化硅埋层(低折射率层)102和衬底硅101构成。钛酸锶介质柱阵列及纳米线波导与二氧化硅埋层接触。The two-stage attenuation system of the present invention is fabricated on a substrate, and tens to hundreds of strontium titanate dielectric columns and a strontium titanate nanowire waveguide are arranged on the substrate. The base is composed of a silicon dioxide buried layer (low refractive index layer) 102 and substrate silicon 101 . The strontium titanate dielectric column array and the nanowire waveguide are in contact with the silicon dioxide buried layer.

本发明的具体制作过程如下:Concrete manufacturing process of the present invention is as follows:

第一步,制备划片所需的划片槽;The first step is to prepare the scribing groove required for scribing;

(A)对衬底硅101为600μm厚,其上生长3μm厚二氧化硅埋层102的基底(如图4a所示)进行清洁处理;(A) Cleaning the substrate silicon 101 with a thickness of 600 μm and growing a buried silicon dioxide layer 102 with a thickness of 3 μm (as shown in FIG. 4 a );

(B)如图4b所示,在二氧化硅埋层102上利用溶胶凝胶法制备一层钛酸锶薄膜103;(B) As shown in FIG. 4b, a strontium titanate thin film 103 is prepared on the silicon dioxide buried layer 102 by a sol-gel method;

(C)如图4c所示,在钛酸锶薄膜103上制作一层厚度为2-3μm的光刻胶膜104;(C) As shown in FIG. 4c, a photoresist film 104 with a thickness of 2-3 μm is formed on the strontium titanate thin film 103;

(D)将步骤(C)制作完成的结构放入烘箱中前烘;(D) putting the completed structure of step (C) into an oven for drying;

(E)如图4d所示,对光刻胶膜104进行紫外曝光,得到与刻蚀划片槽所需光刻版相同的图形;(E) As shown in FIG. 4d, the photoresist film 104 is exposed to ultraviolet light to obtain the same pattern as the photolithography plate required for etching the scribe groove;

(F)如图4e所示,经过显影、坚膜,得到制作划片槽所需的光刻胶掩膜结构;(F) As shown in Figure 4e, after developing and hardening the film, the photoresist mask structure required for making the scribe groove is obtained;

(G)如图4f所示,对步骤(F)制作好的光刻胶掩膜结构进行ICP(感应耦合等离子体刻蚀)刻蚀,刻蚀深度为4μm;如图4g所示,去掉光刻胶膜104得到带有划片槽的划片结构;(G) As shown in Figure 4f, perform ICP (Inductively Coupled Plasma Etching) etching on the photoresist mask structure prepared in step (F), and the etching depth is 4 μm; as shown in Figure 4g, remove the photoresist The resist film 104 obtains a scribe structure with scribe grooves;

第二步,制备ICP刻蚀钛酸锶介质柱阵列和钛酸锶纳米线波导所需的掩膜;The second step is to prepare the mask required for ICP etching strontium titanate dielectric column array and strontium titanate nanowire waveguide;

(H)如图5a、5b所示,在步骤(G)制备好的带有划片槽的划片结构上制作一层厚度为100nm的光刻胶膜201;(H) As shown in Figures 5a and 5b, make a layer of photoresist film 201 with a thickness of 100nm on the scribe structure with scribe grooves prepared in step (G);

(I)将步骤(H)制备完成的结构放入烘箱中前烘;(1) putting the structure prepared in step (H) into an oven before drying;

(J)如图5c所示,对制备好的光刻胶膜201进行电子束曝光;(J) As shown in FIG. 5c, electron beam exposure is carried out to the prepared photoresist film 201;

(K)如图5d所示,经过显影、坚膜,得到制作基于光子晶体谐振腔的两级缩束系统主体结构所需的ICP光刻胶掩膜结构;(K) As shown in Figure 5d, after development and film hardening, the ICP photoresist mask structure required for making the main structure of the two-stage beam shrinkage system based on the photonic crystal resonator is obtained;

第三步,利用第二步制备的ICP光刻胶掩膜结构进行ICP刻蚀,制作基于光子晶体谐振腔的两级缩束系统主体结构;The third step is to use the ICP photoresist mask structure prepared in the second step to perform ICP etching to make the main structure of the two-stage beam shrinkage system based on the photonic crystal resonator;

(L)如图5e所示,对步骤(K)制作好的ICP光刻胶掩膜结构进行ICP刻蚀,刻蚀深度为220nm,得到钛酸锶介质柱阵列和钛酸锶纳米线波导;(L) As shown in Figure 5e, perform ICP etching on the ICP photoresist mask structure prepared in step (K), the etching depth is 220nm, and obtain strontium titanate dielectric column array and strontium titanate nanowire waveguide;

(M)如图5f所示,将钛酸锶介质柱阵列和钛酸锶纳米线波导上的光刻胶去除,并清洗;(M) As shown in Figure 5f, the photoresist on the strontium titanate dielectric column array and the strontium titanate nanowire waveguide is removed and cleaned;

第四步,对要求尺寸精度高于10nm的介质柱进行单独加工;The fourth step is to separately process the dielectric column that requires a dimensional accuracy higher than 10nm;

(N)如图6a、6b所示,在步骤(M)得到的结构上涂覆一层光刻胶301作为保护层;(N) As shown in Figures 6a and 6b, coat a layer of photoresist 301 as a protective layer on the structure obtained in step (M);

(O)如图6c、6d所示,对制备好的光刻胶301进行光学曝光、显影,得到光刻胶掩膜结构,将需要加工的钛酸锶介质柱(包括一级光子晶体缺陷区介质柱12、光子晶体谐振腔耦合区介质柱13、光子晶体谐振腔点缺陷介质柱14、光子晶体谐振腔耦合介质柱15,图中以介质柱14为例)所在区域暴露出来;(O) As shown in Figures 6c and 6d, optically expose and develop the prepared photoresist 301 to obtain a photoresist mask structure, and place the strontium titanate dielectric column (including the primary photonic crystal defect area) that needs to be processed Dielectric column 12, photonic crystal resonator coupling area dielectric column 13, photonic crystal resonator point defect dielectric column 14, photonic crystal resonator coupling dielectric column 15, the area where dielectric column 14 is taken as an example) is exposed;

(P)如图6e、6f所示,利用聚焦离子束(FIB)工艺对需要加工的钛酸锶介质柱进行高精度加工使其达到所需尺寸,去除光刻胶(图中介质柱11为W7型光子晶体波导4、光子晶体谐振腔5及W1型光子晶体波导6主体结构介质柱,为不需要单独加工的介质柱);(P) As shown in Figures 6e and 6f, use the focused ion beam (FIB) process to process the strontium titanate dielectric column to be processed with high precision so that it reaches the required size, and remove the photoresist (the dielectric column 11 in the figure is W7-type photonic crystal waveguide 4, photonic crystal resonator 5 and W1-type photonic crystal waveguide 6 have a main structure dielectric column, which is a dielectric column that does not need to be processed separately);

第五步,去除器件结构边缘区;The fifth step is to remove the edge region of the device structure;

(Q)如图7a、7b所示,在步骤(P)得到的器件结构表面涂覆PMMA层401;(Q) as shown in Figure 7a, 7b, the device structure surface that obtains in step (P) is coated with PMMA layer 401;

(R)如图7c、7d所示,对PMMA层401进行同步辐射X射线曝光、显影,在器件结构上制作一个保护层;(R) as shown in Figure 7c, 7d, carry out synchrotron radiation X-ray exposure, development to PMMA layer 401, make a protective layer on device structure;

(S)按照划片槽划片,即得到16个由钛酸锶介质柱阵列和钛酸锶纳米线波导构成的基于光子晶体谐振腔的两级缩束系统器件主体结构;(S) Scribing according to the scribing groove to obtain 16 main structures of the two-stage beam shrinking system device based on the photonic crystal resonator composed of the strontium titanate dielectric column array and the strontium titanate nanowire waveguide;

(T)如图7e所示,将步骤(S)得到的基于光子晶体谐振腔的两级缩束系统器件结构放入磨片机中,分别用不同的研磨液或抛光液进行侧面研磨及抛光,去除边缘区并使器件结构侧面平整。(T) As shown in Figure 7e, put the device structure of the two-stage beam shrinkage system based on the photonic crystal resonator obtained in step (S) into the grinding machine, and use different grinding fluids or polishing fluids for side grinding and polishing , remove the edge region and flatten the side of the device structure.

由于PMMA折射率小于硅材料,满足在垂直器件方向上的全反射条件,故保留PMMA作为器件的保护结构,增加器件的牢固度,不易损坏。Since the refractive index of PMMA is lower than that of silicon material, it satisfies the condition of total reflection in the direction perpendicular to the device, so PMMA is kept as the protective structure of the device, which increases the firmness of the device and is not easy to be damaged.

Claims (7)

1. the two-stage contracting beam system based on photonic crystal resonant cavity is characterized in that connecting airtight arrangement by W7 type photon crystal wave-guide (4), photonic crystal resonant cavity (5), W1 type photon crystal wave-guide (6) and Nanowire Waveguides (7) order consists of; Photonic crystal resonant cavity (5) adopts and add point defect (14) formation in photonic crystal, and photonic crystal resonant cavity (5) and W7 type photon crystal wave-guide (4) joining place distribution delegation's medium post (13), and this row medium post consists of coupled zone; Photonic crystal resonant cavity (5) and W1 type photon crystal wave-guide joining place, and be distributed with one or more couplant posts (15) with point defect (14) correspondence position; Whole system is integrated in the substrate.
2. the method for making of the two-stage contracting beam system based on photonic crystal resonant cavity as claimed in claim 1, it is characterized in that consisting of contracting beam system structure by make strontium titanates medium post array and strontium titanates Nanowire Waveguides in substrate, concrete manufacturing process is as follows:
The first step, the required scribe line of preparation scribing;
Second step, preparation ICP etching strontium titanates medium post array and the required photoresist mask of strontium titanates Nanowire Waveguides;
The 3rd step, utilize the ICP photoresist mask structure of second step preparation to carry out the ICP etching, make the two-stage contracting beam system agent structure based on photonic crystal resonant cavity;
In the 4th step, the medium post that requires dimensional accuracy to be higher than 10nm is processed separately;
The 5th step, removal devices structural edge district.
3. the method for making of the two-stage contracting beam system based on photonic crystal resonant cavity according to claim 2, the step that it is characterized in that preparing the required scribe line of scribing is as follows:
(A) cleaning is carried out in substrate; Described substrate is made of silicon dioxide buried regions (102) and substrate silicon (101), and silicon dioxide buried regions (102) is grown on the substrate silicon (101);
(B) utilize sol-gal process to prepare one deck strontium titanate film (103) at silicon dioxide buried regions (102);
(C) make one deck photoresist film (104) at strontium titanate film (103);
(D) structure that step (C) is completed is put into the baking oven front baking;
(E) photoresist film (104) is carried out uv-exposure, obtain the figure identical with the required reticle of etching scribe line;
(F) through development, post bake, obtain making the required photoresist mask structure of scribe line;
(G) the photoresist mask structure of step (F) being made carries out the ICP etching, then removes photoresist film (104) and obtains scribing structure with scribe line.
4. the method for making of the two-stage contracting beam system based on photonic crystal resonant cavity according to claim 3 is characterized in that preparing the required photoresist mask step of ICP etching strontium titanates medium post array and strontium titanates Nanowire Waveguides as follows:
(H) the scribing structure with scribe line for preparing in step (G) is made one deck photoresist film (201);
(I) structure of step (H) preparation being finished is put into the baking oven front baking;
(J) photoresist film (201) for preparing is carried out electron beam exposure;
(K) through development, post bake, obtain making strontium titanates medium post array and the required ICP photoresist mask structure of strontium titanates Nanowire Waveguides.
5. the method for making of the two-stage contracting beam system based on photonic crystal resonant cavity according to claim 4, it is characterized in that utilizing the ICP photoresist mask structure of second step preparation to carry out the ICP etching, make as follows based on the two-stage contracting beam system agent structure step of photonic crystal resonant cavity:
(L) the ICP photoresist mask structure of step (K) being made carries out the ICP etching, obtains strontium titanates medium post array and strontium titanates Nanowire Waveguides;
(M) photoresist on strontium titanates medium post array and the strontium titanates Nanowire Waveguides is removed, and cleaned.
6. the method for making of the two-stage contracting beam system based on photonic crystal resonant cavity according to claim 5 is characterized in that the step that the medium post that requires dimensional accuracy to be higher than 10nm is processed separately is as follows:
(N) structure that obtains in step (M) applies one deck photoresist (301) as protective seam;
(O) photoresist (301) for preparing is carried out optical exposure, development, obtain the photoresist mask structure, come out in the strontium titanates medium post region of needs processing;
(P) utilize FIB technique that the strontium titanates medium post of needs processing is processed and make it reach required size, remove photoresist.
7. the method for making of the two-stage contracting beam system based on photonic crystal resonant cavity according to claim 6 is characterized in that removal devices structural edge district step is as follows:
(Q) apply PMMA layer (401) on the device architecture surface that step (P) obtains;
(R) PMMA layer (401) is carried out the synchrotron radiation X-ray exposure, develops, make a protective seam at device architecture;
(S) according to the scribe line scribing, obtain the two-stage contracting beam system device main body structure based on photonic crystal resonant cavity that is consisted of by strontium titanates medium post array and strontium titanates Nanowire Waveguides;
(T) the two-stage contracting beam system device architecture based on photonic crystal resonant cavity that step (S) is obtained is put into wafer lapping machine, carries out the side with different lapping liquids or polishing fluid respectively and grinds and polish, and removes the marginarium and also makes the device architecture flat side down.
CN 201110452806 2011-12-30 2011-12-30 Two-stage beam shrinkage system based on photonic crystal resonant cavity and manufacturing method for two-stage beam shrinkage system Expired - Fee Related CN102419480B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201110452806 CN102419480B (en) 2011-12-30 2011-12-30 Two-stage beam shrinkage system based on photonic crystal resonant cavity and manufacturing method for two-stage beam shrinkage system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201110452806 CN102419480B (en) 2011-12-30 2011-12-30 Two-stage beam shrinkage system based on photonic crystal resonant cavity and manufacturing method for two-stage beam shrinkage system

Publications (2)

Publication Number Publication Date
CN102419480A CN102419480A (en) 2012-04-18
CN102419480B true CN102419480B (en) 2013-01-23

Family

ID=45943969

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201110452806 Expired - Fee Related CN102419480B (en) 2011-12-30 2011-12-30 Two-stage beam shrinkage system based on photonic crystal resonant cavity and manufacturing method for two-stage beam shrinkage system

Country Status (1)

Country Link
CN (1) CN102419480B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103033879B (en) * 2012-12-20 2015-04-08 中国电子科技集团公司第三十八研究所 Method of manufacturing directional coupler of photonic crystal
CN112113691B (en) * 2019-06-21 2022-01-25 南京邮电大学 Gallium arsenide photonic crystal pressure sensor considering temperature influence
CN113376738B (en) * 2021-05-25 2022-06-17 太原理工大学 A funnel-shaped photonic crystal waveguide structure for unidirectional transmission of light waves

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101963736A (en) * 2010-08-11 2011-02-02 中国科学院半导体研究所 Slow light waveguide structure based on photonic crystal air bridge structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4398275B2 (en) * 2003-11-25 2010-01-13 株式会社リコー Light control element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101963736A (en) * 2010-08-11 2011-02-02 中国科学院半导体研究所 Slow light waveguide structure based on photonic crystal air bridge structure

Also Published As

Publication number Publication date
CN102419480A (en) 2012-04-18

Similar Documents

Publication Publication Date Title
Chutinan et al. Diffractionless flow of light in all-optical microchips
US11500218B2 (en) Three-port silicon beam splitter chip and its fabrication method
JP4398275B2 (en) Light control element
US8027556B2 (en) Waveguide coupling structure
US8412007B2 (en) 3-D waveguide coupling device capable of two-step coupling and manufacture method thereof
JP4735259B2 (en) Photonic crystal structure
US20170160473A1 (en) Integrated Impedance-Matched Photonic Zero-Index Metamaterials
CN113885132B (en) A mode spot converter coupled with an optical fiber and an optical waveguide and a manufacturing method thereof
CN113933941B (en) Vertical coupling grating coupler based on binary blazed sub-wavelength grating and preparation method
CN102419480B (en) Two-stage beam shrinkage system based on photonic crystal resonant cavity and manufacturing method for two-stage beam shrinkage system
CN102520521B (en) Three-stage two-dimensional photonic crystal beam compression device and manufacturing method thereof
CN112987183A (en) Interlayer coupler
CN114995010B (en) Silicon-based three-dimensional waveguide mode optical switch based on phase change material
CN112630886A (en) End-face coupler and manufacturing method thereof
CN102565935B (en) Resonant-coupling two-way transmission photon crystal waveguide and manufacturing method thereof
CN102419479B (en) Two-stage beam shrinkage system based on photonic crystal resonant cavity
CN115877506A (en) Thin-film lithium niobate end-face coupler covering visible light wave band and preparation method thereof
CN111799533A (en) Terahertz angle filter with open double-ring structure and manufacturing method thereof
CN102565936B (en) Side surface coupling unidirectional transmission photonic crystal waveguide device
CN113204075B (en) Micro-nano optical fiber-waveguide-superconducting nanowire single photon detector and preparation method thereof
JP3766844B2 (en) Lattice modulation photonic crystal
JP4146788B2 (en) Optical waveguide connection module and method for fabricating the same
CN102590949B (en) Photonic crystal edge-coupled dual-channel optical waveguide transmission system
CN102520522B (en) Multi-stage two-dimensional photonic crystal beam compression device
CN102540329B (en) Two-dimensional side coupling photonic crystal waveguide single-channel system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130123

Termination date: 20141230

EXPY Termination of patent right or utility model