CN102408114B - Method for producing trichlorosilane by utilizing photovoltaic crystalline silicon processing waste mortar - Google Patents
Method for producing trichlorosilane by utilizing photovoltaic crystalline silicon processing waste mortar Download PDFInfo
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- CN102408114B CN102408114B CN 201110238178 CN201110238178A CN102408114B CN 102408114 B CN102408114 B CN 102408114B CN 201110238178 CN201110238178 CN 201110238178 CN 201110238178 A CN201110238178 A CN 201110238178A CN 102408114 B CN102408114 B CN 102408114B
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- crystalline silicon
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- processing waste
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 40
- 239000002699 waste material Substances 0.000 title claims abstract description 35
- 239000004570 mortar (masonry) Substances 0.000 title claims abstract description 33
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000005052 trichlorosilane Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 33
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000004576 sand Substances 0.000 claims abstract description 18
- 238000000926 separation method Methods 0.000 claims abstract description 14
- 229910052742 iron Inorganic materials 0.000 claims abstract description 9
- 239000005046 Chlorosilane Substances 0.000 claims abstract description 8
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 8
- 125000003118 aryl group Chemical group 0.000 claims abstract description 8
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 8
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000001282 organosilanes Chemical class 0.000 claims abstract description 8
- 229910052939 potassium sulfate Inorganic materials 0.000 claims abstract description 8
- 235000011151 potassium sulphates Nutrition 0.000 claims abstract description 8
- 230000008014 freezing Effects 0.000 claims abstract description 6
- 238000007710 freezing Methods 0.000 claims abstract description 6
- 238000000746 purification Methods 0.000 claims abstract description 4
- 239000003595 mist Substances 0.000 claims description 19
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- -1 compound potassium sulfate Chemical class 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000011084 recovery Methods 0.000 claims description 9
- 239000003337 fertilizer Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 238000003786 synthesis reaction Methods 0.000 claims description 6
- 230000018044 dehydration Effects 0.000 claims description 5
- 238000006297 dehydration reaction Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 27
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 abstract description 9
- 239000006227 byproduct Substances 0.000 abstract description 6
- 239000000428 dust Substances 0.000 abstract description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000047 product Substances 0.000 abstract description 4
- 239000001103 potassium chloride Substances 0.000 abstract description 3
- 235000011164 potassium chloride Nutrition 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000002210 silicon-based material Substances 0.000 abstract description 2
- 239000002202 Polyethylene glycol Substances 0.000 abstract 2
- 229910003822 SiHCl3 Inorganic materials 0.000 abstract 2
- 229920001223 polyethylene glycol Polymers 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010573 double replacement reaction Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 125000000524 functional group Chemical group 0.000 abstract 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 abstract 1
- 230000001376 precipitating effect Effects 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000007789 gas Substances 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 208000006558 Dental Calculus Diseases 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005243 fluidization Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000009997 thermal pre-treatment Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000000375 suspending agent Substances 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The invention relates to a method for producing trichlorosilane by utilizing photovoltaic crystalline silicon processing waste mortar, which comprises the following steps of: separating the photovoltaic crystalline silicon processing waste mortar according to application number 201110101064.7<novel method of comprehensively treating photovoltaic crystalline silicon processing waste mortar>, and recovering PEG (polyethylene glycol) and iron to obtain binary sand containing Si and SiC; carrying out double replacement reaction to potassium chloride and sulfuric acid to obtain potassium sulfate; freezing, dehydrating and preheating byproduct HCl to obtain qualified HCl gas, using the HCl gas to carry the binary sand to an air stream bed reactor to form rotational flow, and separating and precipitating SiC favorable for reaction and non reaction of Si+3HCl=SiHCl3+H2; using the reaction product to carry the non reaction SiC micropowder to a separation purification system, and separating by a dust collection device to recover the SiC micropowder; and separating and purifying according to different physicochemical properties of Si chloride to obtain high-purity SiHCl3, which is used for preparing photovoltaic crystalline silicon materials and organosilane of series of products of organic silicon and alkyl, aryl and organic functional group chlorosilane and the like.
Description
Technical field
The present invention relates to utilize photovoltaic crystalline silicon processing waste mortar to produce the trichlorosilane method, belong to photovoltaic crystalline silicon processing waste comprehensive utilization field.
Background technology
Trichlorosilane is the intermediate of producing photovoltaic crystalline silicon, also is the synthesis material of organosilane and alkyl, aryl and organo-functional group chlorosilane, main preparation methods: (1) Si and HCl reaction; (2) hydrogen reduction silicon tetrachloride (adopting the catalyzer of aluminum contained compound).Use at most with method (1), its reaction raw materials Si powder adopts the metallurgical grade silica flour: Si 〉=98.5%, Fe≤0.5%, Al≤0.5%, Ca≤0.3%, P
2O
5≤ 0.3%, granularity 80-200 order (75-180um); HCl adopts the H of electrolytic saltwater
2↑ and Cl
2↑ reaction is produced; Si+3HCl ↑=SiHCl
3↑+H
2↑ building-up reactions in fluidized-bed reactor, carry out.
Producing as the raw material metathesis in the Mannheim proeess technique of vitriolate of tartar take Repone K and sulfuric acid, equation 2KCl+H is pressed in reaction
2SO
4==K
2SO
4+ 2HCl ↑ carry out, by-product HCl ↑ by water absorb and to make hydrochloric acid and sell because the market capacity restriction, HCl ↑ be treated as the subject matter that the restriction compound potassium sulfate fertilizer is produced.
Photovoltaic crystalline silicon processing waste mortar is the iron powder (cutting tool lost material) that is mixed with 10-40%PEG (polyoxyethylene glycol-abrasive material suspension agent), 15-30%SiC (cutting abrasive material), 10-1% that forms in the solar-energy photo-voltaic cell process of manufacture, the quaternary mixture system of 65-29%Si micro mist (crystalline silicon cutting abrasive dust).Present treatment technology can only reclaim PEG and SiC micro mist wherein, and the most valuable Si micro mist (crystalline silicon cutting abrasive dust) then because chemical reaction occurs as offal treatment in treating processes, has caused serious resource waste and pollution environment.
The applicant paid close attention to the processing problem of solar-energy photo-voltaic cell crystalline silicon processing waste mortar since 2006, Si technology the most valuable in the waste mortar is recycled in exploratory development.The application for a patent for invention of application number 201110101064.7 " waste mortar formed by processing photovoltaic cell crystalline silicon comprehensive treating process novel method " was proposed on April 22nd, 2011, after finishing separation, reclaim the PEG and iron in the waste mortar according to this patent application technology, the mass ratio of the SiC that obtains, Si binary sand is SiC10-50%, granularity≤30um; Si90-49%, granularity≤10um; Fe≤0.3%, other≤0.7%, granularity≤50um; Comprehensive size range is between the 1000-3000 order.Because the binary fineness of sand is meticulous, can not realize effective fluidisation in traditional fluidized-bed reactor, can't react with traditional fluidized-bed reactor the preparation trichlorosilane; And utilize photovoltaic crystalline silicon processing antiquated sand to prepare trichlorosilane as the synthesis material of producing photovoltaic crystalline silicon and organosilane, alkyl, aryl and organo-functional group chlorosilane, then be the most economical effective approach of waste mortar formed by processing photovoltaic cell crystalline silicon comprehensive utilization.
Summary of the invention
The additional perfect scheme that the purpose of this invention is to provide a kind of " waste mortar formed by processing photovoltaic cell crystalline silicon comprehensive treating process novel method " of application number 201110101064.7 realizes that optimization and the environmental pollution of the utilization of resources minimizes.
The object of the present invention is achieved like this: after finishing separation, reclaim the PEG and iron in the waste mortar according to application number 201110101064.7 " waste mortar formed by processing photovoltaic cell crystalline silicon comprehensive treating process novel method ", the binary sand that is comprised of SiC, Si micro mist is mixed with HCl gas in the spray people air flow bed reactor, press Si+3HC ↑=SiHCl
3↑+H
2↑ reaction, the preparation trichlorosilane, as the synthesis material of preparation photovoltaic crystalline silicon and organosilane, alkyl, aryl and organo-functional group chlorosilane, nonreactive SiC micro mist is by the cleaning apparatus Separation and Recovery of system for separating and purifying.
Mass content SiC5-50%, the granularity≤30um of SiC, Si binary sand; Si95-49%, granularity≤10um; Fe≤0.3%, other≤0.7%, granularity≤50um; Comprehensive size range 1000-3000 order.
The HCl of participation reaction ↑ be compound potassium sulfate fertilizer production (2KCl+H
2SO
4==K
2SO
4+ 2HCl ↑) the HCl gas that produces, this gas is by after freezing, the dehydration, and HCl 〉=95% is above, water content≤0.1%.
Spray into entrained-flow reactor by calculating proportioning with HCl ↑ carry secretly through fully dry SiC, Si binary sand, the formation eddy flow, in order to Si+3HCl ↑=SiHCl
3↑+H
2The separate and subside with nonreactive SiC is carried out in ↑ reaction, and temperature of reaction is controlled at 200-400 ℃; Reaction product is discharged from air flow bed top, enters system for separating and purifying, and the SiC micro mist that goes out by cyclonic separation regularly reclaims from the air flow bed bottom.
Air flow bed resultant of reaction SiHCl
3↑+H
2↑ carry the part solia particle secretly to leave entrained-flow reactor, enter system for separating and purifying, by the dedusting and purifying device Separation and Recovery solia particles such as SiC wherein; Obtain the trichlorosilane elaboration as the raw material of preparation photovoltaic crystalline silicon or the synthesis material of organosilane and alkyl, aryl and organo-functional group chlorosilane by the rectification and purification device.
Advantage of the present invention is that trichlorosilane is produced in the HCl gas reaction that the SiC, Si binary sand and the compound potassium sulfate fertilizer that directly utilize waste mortar formed by processing photovoltaic cell crystalline silicon to process to obtain are produced by-product, namely simplified the treatment process of waste mortar formed by processing photovoltaic cell crystalline silicon, solved the fluidisation problem that meticulous Si micro mist prepares trichlorosilane, take full advantage of Si resource wherein, solved again compound potassium sulfate fertilizer produce by-product HCl gas processing with utilize problem, saved traditional trichlorosilane production technique and be produce that HCl gas is equipped with prepare CI from electrolytic saltwater
2, H
2The facility investment that generates HCl to reaction consumes with production, has reduced cost.Realized resource circulation utilization truly, comprehensive benefit is best.
Hereby in conjunction with the accompanying drawings and embodiments the present invention is further specified.
Description of drawings
Accompanying drawing is to utilize photovoltaic crystalline silicon processing antiquated sand to produce the trichlorosilane process flow sheet
Box indicating treatment process among the figure, wherein 1 is the separation undertaken by application number 201110101064.7 " waste mortar formed by processing photovoltaic cell crystalline silicon comprehensive treating process novel method ", PEG in the recovery waste mortar and the operation of iron, and 2 is drying process, and 3 is 2KCl+H
2SO
4==K
2SO
4+ 2HCl ↑ reaction process, 4 is HCl ↑ processing (freezing, dehydration, preheating) operation, and 5 is the air flow bed reaction process, and 6 is that reaction product is separated, purification process.Ellipse representation operation material: wherein waste mortar refers to waste mortar formed by processing photovoltaic cell crystalline silicon, after binary sand refers to isolate PEG and iron, contains the binary mixture of Si, SiC, and all the other are process product, the subscript horizontal line be finished product.
Embodiment
Below be specific embodiments of the invention, but method of the present invention and not exclusively being limited, the those skilled in the art can be as required changes or omits wherein step.
Embodiment 1:
As desire to make money or profit and produce shown in the trichlorosilane process flow sheet with photovoltaic crystalline silicon processing antiquated sand: be mixed with 10-40%PEG (polyoxyethylene glycol), 15-30%SiC (cutting abrasive material), the iron powder of 10-1% (cutting tool material), quaternary mixture system---the waste mortar of 65-29%Si micro mist (crystalline silicon cutting abrasive dust), in pressing, operation 1 please number 201110101064.7 " waste mortar formed by processing photovoltaic cell crystalline silicon comprehensive treating process novel methods " separate, reclaim PEG and iron in the waste mortar, obtain containing Si, the binary sand of SiC, its mass content SiC15%, granularity≤30um; Si84%, granularity≤10um; Fe≤0.3%, other≤0.7%, granularity≤50um; Comprehensive size range 1000-3000 order; Through operation 2 abundant drying for standby.
Potassium chloride (KCl) and vitriol oil H
2SO
4Drop in the reactor of mannheim, carry out the 2KCl+H of operation 3
2SO
4==K
2SO
4+ 2HCl ↑ reaction generates vitriolate of tartar K
2SO
4, the preparation compound potassium sulfate fertilizer; By-product HCl ↑ 4 freezing through operation, dehydration, thermal pretreatment obtain that HCl 〉=95% is above, the HCl gas of 50～80 ℃ of water content≤0.1%, temperature.
Spray into entrained-flow reactor by calculating proportioning with HCl ↑ carry secretly through the fully dry SiC of operation 2, Si binary sand, the formation eddy flow, in order to Si+3HCl ↑=SiHCl
3↑+H
2The separate and subside with nonreactive SiC is carried out in ↑ reaction, and temperature of reaction is controlled at 200-400 ℃; Reaction product SiHCl
3↑+H
2↑ carry the part solia particle secretly to discharge from air flow bed top, enter system for separating and purifying; Regularly discharge recovery by the nonreactive SiC micro mist that cyclonic separation goes out from the air flow bed bottom, finish the air flow bed reaction of operation 5.
Reaction product is carried nonreactive SiC micro mist secretly and is entered the system for separating and purifying of operation 6, at first passes through the solid dusts such as tornado dust collector, sack cleaner Separation and Recovery SiC; Then according to the muriatic different physico-chemical property of Si, carry out separating-purifying at rectifying and purifying system, obtain highly purified SiHCl
3And H
2↑, for the preparation of the photovoltaic crystalline silicon material.
Embodiment 2:
As desire to make money or profit and produce shown in the trichlorosilane process flow sheet with photovoltaic crystalline silicon processing antiquated sand: quaternary mixture system---the waste mortar that is mixed with PEG, iron powder, SiC micro mist, Si micro mist, separate, reclaim wherein PEG and iron according to application number 201110101064.7 " waste mortar formed by processing photovoltaic cell crystalline silicon comprehensive treating process novel method " in operation 1, obtaining mass ratio is SiC 30%, granularity≤30um; Si 69.4%, granularity≤10um; Fe≤0.3%, other≤0.7% granularity≤50um; Comprehensive size range 1000-3000 order; Through operation 2 abundant drying for standby.
Potassium chloride (KCl) and vitriol oil H
2SO
4Drop in the reactor of mannheim, carry out the 2KCl+H of operation 3
2SO
4==K
2SO
4+ 2HCl ↑ reaction generates vitriolate of tartar K
2SO
4, the preparation compound potassium sulfate fertilizer; By-product HCl ↑ process operation is 4 freezing, dehydration, thermal pretreatment, obtains that HCl 〉=95% is above, the HCl gas of 50～80 ℃ of water content≤0.1%, temperature.
Spray into entrained-flow reactor by calculating proportioning with HCl ↑ carry secretly through the fully dry SiC of operation 2, Si binary sand, the formation eddy flow, in order to Si+3HCl ↑=SiHCl
3↑+H
2The separate and subside with nonreactive SiC is carried out in ↑ reaction, is the micro mist of 0-10um granularity owing to participate in the Si of reaction, and speed of response is very fast, control temperature of reaction 200-300; Reaction product SiHCl
3↑+H
2↑ carry the part solia particle secretly to discharge from air flow bed top, enter system for separating and purifying; Regularly discharge recovery by the nonreactive SiC micro mist that cyclonic separation goes out from the air flow bed bottom, finish the air flow bed reaction of operation 5.
Reaction product is carried nonreactive SiC micro mist secretly and is entered the system for separating and purifying of operation 6, at first passes through the solid dusts such as tornado dust collector, sack cleaner Separation and Recovery SiC; Then according to the muriatic different physico-chemical property of Si, carry out separating-purifying at rectifying and purifying system, obtain highly purified SiHCl
3, for the preparation of organosilicon series product: organosilane and alkyl, aryl and organo-functional group chlorosilane etc.
Claims (5)
1. utilize photovoltaic crystalline silicon processing waste mortar to produce the trichlorosilane method, it is characterized in that: for the different physico-chemical properties of photovoltaic crystalline silicon processing waste mortar system four large components, guaranteeing that Si micro mist does not wherein occur under the prerequisite of chemical reaction, separate, reclaim PEG and iron in the waste mortar, the remaining binary sand that is comprised of SiC, Si micro mist mixed spraying in the entrained-flow reactor with HCl gas, press Si+3HCl ↑=SiHCl
3↑+H
2↑ reaction, the preparation trichlorosilane, as the synthesis material of preparation photovoltaic crystalline silicon and organosilane, alkyl, aryl and organo-functional group chlorosilane, nonreactive SiC micro mist is by the cleaning apparatus Separation and Recovery of system for separating and purifying.
2. the photovoltaic crystalline silicon processing waste mortar that utilizes according to claim 1 is produced the trichlorosilane method, and it is characterized in that: SiC, Si binary chiltern amount content are SiC5-50%, granularity≤30um; Si95-49%, granularity≤10um; Fe≤0.3%, other≤0.7%, granularity≤50um; Comprehensive size range 1000-3000 order.
3. the photovoltaic crystalline silicon processing waste mortar that utilizes according to claim 1 is produced the trichlorosilane method, it is characterized in that: the HCl of participation reaction ↑ and be that compound potassium sulfate fertilizer is produced 2KCl+H
2SO
4==K
2SO
4The HCl gas of+2HCl ↑ generation, this gas is by after freezing, the dehydration, above, water content≤0.1% of HCl 〉=95%.
4. the photovoltaic crystalline silicon processing waste mortar that utilizes according to claim 1 is produced the trichlorosilane method, it is characterized in that: spray into entrained-flow reactor by calculating proportioning with HCl ↑ carry secretly through fully dry SiC, Si binary sand, form eddy flow, in order to Si+3HCl ↑=SiHCl
3↑+H
2The separate and subside with nonreactive SiC is carried out in ↑ reaction, and temperature of reaction is controlled at 200-400 ℃; Reaction product is discharged from air flow bed top, enters system for separating and purifying, and the SiC micro mist that goes out by cyclonic separation regularly reclaims from the air flow bed bottom.
5. the photovoltaic crystalline silicon processing waste mortar that utilizes according to claim 1 is produced the trichlorosilane method, it is characterized in that: air flow bed resultant of reaction SiHCl
3↑+H
2↑ carry the part solia particle secretly to leave entrained-flow reactor, enter system for separating and purifying, by dedusting and purifying device Separation and Recovery SiC solia particle wherein; Obtain the trichlorosilane elaboration as the raw material of preparation photovoltaic crystalline silicon or the synthesis material of organosilane and alkyl, aryl and organo-functional group chlorosilane by the rectification and purification device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110238178 CN102408114B (en) | 2011-08-12 | 2011-08-12 | Method for producing trichlorosilane by utilizing photovoltaic crystalline silicon processing waste mortar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110238178 CN102408114B (en) | 2011-08-12 | 2011-08-12 | Method for producing trichlorosilane by utilizing photovoltaic crystalline silicon processing waste mortar |
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| CN102408114A CN102408114A (en) | 2012-04-11 |
| CN102408114B true CN102408114B (en) | 2013-10-30 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203998968U (en) * | 2013-06-17 | 2014-12-10 | 储晞 | A kind of for recycling the device of the isolated solid white residue of silicon cutting waste mortar |
| CN105883815B (en) * | 2016-04-14 | 2018-07-03 | 镇江环太硅科技有限公司 | A kind of method that discarded silicon slurry recycling of silicon chip cutting prepares porous silicon carbide |
| CN108069428B (en) * | 2016-11-18 | 2023-10-10 | 江苏中能硅业科技发展有限公司 | Device and process for treating polysilicon byproduct slag slurry |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1370635A (en) * | 2001-12-21 | 2002-09-25 | 尹克胜 | Comprehensive treating process for waste crystal procesing oily sand |
| CN1689718A (en) * | 2004-04-21 | 2005-11-02 | 尹克胜 | Waste sand treating method in crystal processing |
| CN101367524A (en) * | 2008-10-10 | 2009-02-18 | 广州吉必盛科技实业有限公司 | Improved trichlorosilane synthesis method and apparatus |
| CN101792142A (en) * | 2009-12-31 | 2010-08-04 | 唐康宁 | Method for recovering polysilicon ingots, carborundum powder and polyethylene glycol from cutting waste mortar |
| CN101817526A (en) * | 2010-04-08 | 2010-09-01 | 浙江源盛硅晶材料有限公司 | Method for recovering polyethylene glycol and silicon carbide from silicon crystal cutting waste liquid |
-
2011
- 2011-08-12 CN CN 201110238178 patent/CN102408114B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1370635A (en) * | 2001-12-21 | 2002-09-25 | 尹克胜 | Comprehensive treating process for waste crystal procesing oily sand |
| CN1689718A (en) * | 2004-04-21 | 2005-11-02 | 尹克胜 | Waste sand treating method in crystal processing |
| CN101367524A (en) * | 2008-10-10 | 2009-02-18 | 广州吉必盛科技实业有限公司 | Improved trichlorosilane synthesis method and apparatus |
| CN101792142A (en) * | 2009-12-31 | 2010-08-04 | 唐康宁 | Method for recovering polysilicon ingots, carborundum powder and polyethylene glycol from cutting waste mortar |
| CN101817526A (en) * | 2010-04-08 | 2010-09-01 | 浙江源盛硅晶材料有限公司 | Method for recovering polyethylene glycol and silicon carbide from silicon crystal cutting waste liquid |
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| CN102408114A (en) | 2012-04-11 |
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