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CN102403560A - 封装耦合器 - Google Patents

封装耦合器 Download PDF

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CN102403560A
CN102403560A CN2011102721839A CN201110272183A CN102403560A CN 102403560 A CN102403560 A CN 102403560A CN 2011102721839 A CN2011102721839 A CN 2011102721839A CN 201110272183 A CN201110272183 A CN 201110272183A CN 102403560 A CN102403560 A CN 102403560A
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CN102403560B (zh
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希拉勒·伊兹丁
克莱尔·拉波特
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STMicroelectronics Tours SAS
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/18Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
    • H01P5/184Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
    • H01P5/185Edge coupled lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

本发明公开了一种封装耦合器。一种分布式耦合器,所述分布式耦合器包括用以传输其两个端部之间的无线电信号的第一线和用以通过耦合对所述信号的部分进行采样的第二线,其中:所述第一线和第二线中的一个线形成在绝缘基板上;以及另一线形成在支撑所述基板的引线框上,一个线位于另一线的上方。

Description

封装耦合器
技术领域
本发明总的来说涉及电子工业,且更具体地涉及无线电收发系统。本发明更具体地涉及形成封装体中的耦合器。
背景技术
耦合器通常用来获得所谓的主要或主传输线上存在的部分功率并将其提供给位于附近的另一所谓的耦合线或副线。耦合器根据它们是由分立无源元件构成还是由互相靠近以耦合的导线构成而分成集总元件耦合器和分布式耦合器两类。本公开内容与第二类耦合器有关。主线的端口通常称为IN(输入)和OUT(输出)。耦合线的在端子IN侧的端口通常称为CPL(耦合),在端子OUT侧的端口通常称为ISO(隔离)。
分布式耦合器通常以薄绝缘基板上的导线的形式制造。形成衰减器的电阻元件也可以与该耦合器结合。一旦完成,将该组件封装在封装体中,该封装体设置有例如连接到电子电路板的导电凸块。
当在基板上形成时,通常利用接地板包围耦合器的导线。
发明人已注意到,该接地板对耦合器的性能且尤其是对定向性造成影响,定向性对应于从端口IN开始的端口ISO和CPL之间的传输损耗的差。而且,导电凸块的尺寸也对所述性能造成影响。凸块越大,定向性越不佳。
发明内容
一实施方式提供了克服常见耦合器的所有缺点或部分缺点的耦合器。
另一实施方式提供了小体积的耦合器
再一实施方式避免了耦合器的定向性因接地板的影响而降低。
实施方式提供了一种分布式耦合器,所述分布式耦合器包括用以传输其两个端部之间的无线电信号的第一线和用以通过耦合对所述信号的部分进行采样的第二线,其中:
所述线中的一个线形成在绝缘基板上;以及
另一线形成在支撑所述基板的引线框上,一个线位于另一线上方。
根据实施方式,所述第二线的端部连接到电阻衰减器。
根据实施方式,接地板彼此紧靠层叠地形成在所述基板上和所述引线框中。
根据实施方式,所述第二线形成于所述基板的第一表面上,所述基板的另一表面在所述主线上方。
根据实施方式,所述第二线形成于所述基板的第一表面上,所述基板通过导电凸块位于所述引线框上
接合附图,在以下具体实施方式的非限制性描述中,将详细地讨论上述的和其他的目的、特征和优势。
附图说明
图1是分布式耦合器的简化图;
图2是位于常见耦合器中的基板上的导电层的简化俯视图;
图3是耦合器的实施方式的简化图;
图4示出了图3的耦合器的一部分的实施方式;
图5是图3的耦合器的封装体的俯视图;
图6示出了封装耦合器的实施方式的截面图;以及
图7示出了封装耦合器的另一实施方式的截面图。
具体实施方式
在不同的附图中,用相同的附图标记表示相同的元件,所述不同附图不按比例绘制。为了清楚,仅示出了那些对于理解本发明有用的元件,并将对这些元件进行描述。具体地,未详述能够连接到耦合器的不同的上游电路和下游电路,本发明的实施方式与无线电收发电路中目前使用的耦合器相容。而且,也未详述实际的耦合器制造步骤,本发明的实施方式同样与传统的步骤相容。
图1示意性地示出了分布式耦合器1。所述耦合器包括用于传输(接收或发送)无线电信号的主线12。所谓的输入端口或通道IN位于信号接收侧上(根据传输方向,位于放大器侧或天线侧上),而所谓的输出端口或通道OUT(有时还称为DIR)相反地位于天线侧或接收放大器侧上。耦合器1的耦合线或副线14对主线的部分功率采样。耦合器的端口CPL对应于端口IN侧上的副线的端部并提供与测量有关的信息。该线的另一端部限定端口ISO。
在图1的示例中,耦合器是对称的,即其端口或通道的定义取决于外部连接。
图2是通过薄层沉积而在绝缘基板2上形成的耦合器的简化俯视图。
若干导电层(图2示出了其中的单个导电层22)堆叠在基板2上,导电层中插入有绝缘层。在导电层22中形成接地板M,各个主线12和副线14以导电路径的形式形成在接地板的开口24中。端口IN、OUT、CPL和ISO位于形成有导电凸块的区域26上。副线的端部142和端部144不直接连接到相应焊盘26,而通过由方块表示的电阻衰减器28连接到相应焊盘26。这样的衰减器包括与各个端部144和关注的焊盘26的连接线(由图2中的虚线表示的连接线)以及接地连接。
为了简化,图2中示出了一个导电层,但应当注意到,实际上整个耦合器通常需要三个导电层。
一旦在绝缘基板上形成,该组件被封装在封装体中。在图2的示例中,电路表面积强烈依赖于导电凸块26的尺寸。
而且,一旦位于电子电路板上,该耦合器通常必须距离该电路板的接地板近。这影响耦合器性能且通常需要考虑最终嵌入以定耦合器的尺寸,这很不方便。
图3是封装耦合器的实施方式的非常简化的图。
根据将要描述的实施方式,提供了在绝缘基板上形成耦合器的副线14且在封装体中形成耦合器的主线12,绝缘基板用虚线4示意性地示出,封装体由虚线3表示。颠倒当然也是可能的。
在图3的示例中,线14的端部不直接连接到端子CPL和ISO,而经过电阻衰减器5连接到CPL和ISO。这些衰减器为pi(π)型衰减器并且各包括三个电阻器R。这些电阻器中的第一电阻器将线14的端部分别连接到端子CPL或ISO,而每一衰减器的其他两个电阻器R使该衰减器的第一电阻器的端部接地。
图4是绝缘基板4上的耦合器的副线部分的实施方式的简化俯视图。和图2的实施方式一样,若干导电层用来形成不同的元件。在图4的示例中,副线以直线导电路径14的形式形成在第一导电层中。接地板42和线14同时形成在基板4的表面上。电阻衰减器5形成在接地板42的上方。导电路径44和46不一定在相同的导电层上,它们分别将路径14的端部142和144连接到各个衰减器的第一端子。这些衰减器的第二端子连接到导电焊盘45或47,导电焊盘45和47限定端子CPL和ISO。衰减器的第三端子连接到接地板42。焊盘49用来将接地板接点转移到封装体的外部。
相对于传统的实施方式(图2),该绝缘板的尺寸减小,尤其是因为单个耦合线形成于其中。而且,仅需要提供所述接点的一半,而不是需要提供用于容纳凸块的大区域。
图5是根据该实施方式的封装体3的仰视图。图5的视图被随意地称为仰视图。根据封装体所放置的方向,其也可以是顶视图。该封装体包括用以形成耦合器的主线的导电路径12。该路径的两个端部连接到导电焊盘32和34,导电焊盘32和34限定耦合器的端子IN和OUT。路径12靠近路径14地位于路径14(图5中由虚线示出的基板4的主体)的上方。
因此,现在耦合是竖直的,而不是水平的。
优选地,接地板36形成在路径12的层上,靠近接地板42地位于接地板42的上方。板36连接到接地焊盘39,通过镀通孔还连接到基板4的焊盘49。最后,导电焊盘35和37形成在焊盘45和47的上方以将它们的接点转移到封装体的外部。
优选地,在封装层上形成的导电元件被限定在一引线框中,当封装基板4时基板4位于引线框上。通常在封装之前预备使用这样的通道以形成接地板和接点区域。路径12也形成于其中。
发明人已注意到,当在形成有主线和副线的层中接地板以尽可能相似的形状彼此面对时,获得较好的定向性。在图4和图5的实施方式中,接地板36线对称。作为变型,如果接地板在副线周围延伸,则将在引线框中形成相似的接地板。
图6是由图3到图5示出的结构的第一实施方式的截面图。
图6非常简化且仅沿着封装体3的厚度示出了不同元件的各个位置。在该示例中,假定基板4的后表面(与形成有路径12的表面相对)位于引线框上。该引线框包括区域62,该区域62用于接收引线61以将来自基板4的上表面的接点(45、47、49,图4)转移。在封装体3的下表面可以看到主线14。实际上,绝缘层位于该下表面上并仅留有通向接点的通道。该类型的封装体例如用来位于印刷电路板(未示出)上。
线12和线14之间的基板4的厚度决定耦合器的定向性且该厚度是根据设定阻抗匹配的导线的阻抗选择的。
图7示出了另一实施方式,其中基板4限定用于容纳导电凸块72的区域。接着,将基板4置于支撑线12和接点区域62的引线框上,基板4的前表面(支撑线14)朝下。接着将该组件封装在树脂中以形成封装体3。高度H是由导电凸块的厚度决定的。
作为实施方式的特定示例,主线和副线之间的几百微米的间隔H提供良好的定向性。
所描述的实施方式的优点是:利用了电子电路的制造厚度的明显差异,而非增大相同板中的路径之间的距离。这使得能够节省耦合器表面积。
已描述了各种实施方式,本领域的专业技术人员会想到各种变型和改动。具体而言,基于上文给出的功能性描述和耦合器所需的阻抗,本发明的可行实现方式在本领域的专业技术人员的能力之内。而且,也可以根据应用来改变导线的尺寸和为电阻器定的值。再者,可以设想其他的封装体结构,规定沿厚度获得耦合线之间的距离。例如,各支撑所述线中的一个线的两个基板(和接地板)可以堆叠。

Claims (5)

1.一种分布式耦合器,所述分布式耦合器包括用以传输其两个端部之间的无线电信号的第一线(12)和用以通过耦合对所述信号的部分进行采样的第二线(14),其中:
所述第一线和所述第二线中的一个是在绝缘基板(4)上形成的;以及
所述第一线和所述第二线中的另一个是在支撑所述基板的引线框上形成的,所述第一线和所述第二线中有一个线位于另一个线的上方。
2.如权利要求1所述的耦合器,其中,所述第二线的端部连接到电阻衰减器(5)。
3.如权利要求1所述的耦合器,其中接地板(36、42)彼此靠近地一上一下地形成在所述基板(4)上和所述引线框中。
4.如权利要求1所述的耦合器,其中所述第二线(14)位于所述基板(4)的第一表面上,所述基板的另一表面在所述主线(12)的上方。
5.如权利要求1所述的耦合器,其中所述第二线(14)位于所述基板(4)的第一表面上,所述基板(4)通过导电凸块(72)置于所述引线框上。
CN201110272183.9A 2010-09-10 2011-09-13 封装耦合器 Expired - Fee Related CN102403560B (zh)

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US8797121B2 (en) 2014-08-05
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