CN102386220A - IGBT with back reinforcing structure and fabrication method thereof - Google Patents
IGBT with back reinforcing structure and fabrication method thereof Download PDFInfo
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Abstract
The invention provides an insulated gate bipolar translator (IGBT) with a back reinforcing structure, and belongs to the transistor structure field. The uniform P+ typed collector regions of the traditional IGBT provided by the invention are changed into convex and concave structures, and the surfaces for contacting the P+ typed collector regions with N- typed shift regions are of convex and concave structures; the corresponding P+ typed collector regions and the collectors are also of convex and concave structures. In addition, the invention further discloses a fabrication method of IGBT with the back reinforcing structure. In the invention, as the surfaces of IGBT for contacting the N- typed shift regions and the P+ typed collector regions are of convex and concave structures, and the corresponding P+ typed collector regions and the collectors are also of convex and concave structures, the sizes of P and N junctions in the collector regions are enlarged and the purpose of reducing the positive connection voltage drop is achieved.
Description
Technical field
The invention belongs to the transistor arrangement field, relate in particular to a kind of IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) that the back of the body is annotated the enhancing structure that has.
Background technology
IGBT is important high-power switch device, and its forward conduction voltage drop is one of most important performance parameter of IGBT.The same with all device for power switching, the voltage-current characteristic under the IGBT on-state is determining its on-state power consumption, for definite current handling capability and important.
The structure of IGBT device derives from VDMOS (vertical double diffusion Metal-Oxide Semiconductor field-effect transistor), and the IGBT device has replaced the N+ material among the VDMOS with the P+ substrate, but its cellular structure is still quite similar.The section of a NPT-IGBT (non-punch through IGBT) cellular is as shown in Figure 1.The surface portion of IGBT cellular region comprises: the N+ type emitter region 101 that is connected with emitter E, the P+ type body contact zone 105 that is connected with emitter E, and the P type tagma 102 that centers on P+ type body contact zone 105 and emitter E; P+ type body contact zone 105 can close with P type tagma 102 and be called the tagma.Below P type tagma 102, form N-type drift region 107, below N-type drift region 107, form P+ type collector area 106.P+ type collector area 106 is connected with collector electrode C.The connection or the shutoff of electric current between grid G control sets electrode C and the emitter E, between grid G and N-type drift region 107, P type tagma 102, the N+ type emitter region 101 across gate oxide 104.Cover insulating barrier 103 on the grid G.Among Fig. 1: the PN junction between P+ type collector area 106 and the N-type drift region 107 is first PN junction, and the substrate between P+ type body contact zone 105 and the N-type drift region 107 is become second PN junction.
Operation for IGBT cellular region under the on-state describes.When emitter E ground connection, collector electrode C, grid G are applied positive voltage.Thereby the partial inversion of in P type tagma 102, facing grid G through gate oxide 104 becomes the N type.Therefore, electronic carrier injects to N-type drift region 107 from N+ type emitter region 101 through the raceway groove that is reversed to the N type, and accumulates in the N-type drift region 107.When electronic carrier was assembled in N-type drift region 107, N-type drift region 107 reduced with the contact potential difference of P+ type collector area 106, thereby holoe carrier is injected into N-type drift region 107 from P+ type collector area 106.In this way, electricity takes place and leads modulation in N-type drift region 107, thereby resistance reduces.Disappear from P+ type collector area 106 injected holes charge carriers and electron recombination, or be discharged into emitter E through P type tagma 102 and P+ type body contact zone 105.
The IGBT of this structure has uniform P+ type collector area, and the collector area area equates with chip area, causes forward conduction voltage drop higher.The same with all device for power switching, the voltage-current characteristic under the IGBT on-state is determining its on-state power consumption, is very important for establishing current handling capability.The forward conduction voltage drop height can cause having higher on-state power consumption in the IGBT use.
Summary of the invention
The present invention solves existing IGBT forward conduction voltage drop technical problems of high, and a kind of forward conduction voltage drop is low, have back of the body notes enhancing structure IGBT and manufacturing approach thereof are provided.
A kind of IGBT with back enhancing structure comprises: collector electrode, P+ type collector area, N-type drift region, first tagma, second tagma, a N+ type emitter region, the 2nd N+ type emitter region, gate oxide, grid, insulating barrier, emitter;
Device up is followed successively by collector electrode, P+ type collector area, N-type drift region from bottom; Top, said N-type drift region is followed successively by first tagma, second tagma, and first tagma and second tagma are kept apart by the outstanding part in N-type drift region; The one N+ type emitter region links to each other with the thin part in first tagma, the 2nd N+ type emitter region links to each other with the thin part in second tagma; Gate oxide links to each other with the outstanding thin part in part, first tagma, the thin part in second tagma, a N+ type emitter region, the 2nd N+ type emitter region in N-type drift region; Grid links to each other with gate oxide; Insulating barrier is between grid and emitter; Emitter links to each other with first tagma, insulating barrier, second tagma respectively;
Said N-type drift region and the contacted face of P+ type collector area are provided with convex-concave structure, and corresponding P+ type collector area, collector electrode also are convex-concave structure.
In addition, the present invention also provides a kind of manufacturing approach that the back of the body is annotated the IGBT that strengthens structure that has, and comprises the steps:
Utilize dry oxidation on N-type drift region, to grow and form gate oxide; Pad amasss polysilicon and polysilicon is carried out etching and forms grid on gate oxide; Utilize the autoregistration effect of polysilicon gate to carry out the ion injection in P type tagma; And the ion that passes through mask formation P+ type body contact zone injects; Utilize N+ mask ion to inject and form N+ type emitter region; The long-pending insulating barrier of pad on grid; The long-pending metal of pad forms emitter on insulating barrier and P+ type body contact zone;
N-type drift region is etched into convex-concave structure; Male and female face to N-type drift region carries out the ion injection, forms the P+ type collector area with convex-concave structure; P+ type collector area is metallized, form collector electrode.
The N-type drift region of IGBT and contacted of P+ type collector area are convex-concave structure among the present invention, and corresponding P+ type collector area, collector electrode also are convex-concave structure.Increase the area of collector area PN junction, reached the purpose that reduces the IGBT forward conduction voltage drop.
Description of drawings
Fig. 1 is the generalized section of the NPT-IGBT cellular that provides of prior art;
Fig. 2 is the simplification equivalent resistance sketch map of the analysis IGBT on-state characteristic that provides of the embodiment of the invention;
Fig. 3 is that the back of the body that has that the embodiment of the invention 1 provides is annotated the IGBT generalized section that strengthens structure;
Fig. 4 is that the back of the body that has that the embodiment of the invention provides is annotated the IGBT Facad structure sketch map that strengthens structure;
Fig. 5 is that the back of the body that has that the embodiment of the invention provides annotate to strengthen sketch map behind the IGBT back-etching of structure;
Fig. 6 is that the back of the body that has that the embodiment of the invention provides is annotated the IGBT back side ion injection sketch map that strengthens structure;
Fig. 7 is that the back of the body that has that the embodiment of the invention provides is annotated the IGBT back side formation convex-concave shape P+ type collector area sketch map that strengthens structure;
Fig. 8 is that the back of the body that has that the embodiment of the invention provides is annotated enhancing structure trench gate IGBT sketch map;
Fig. 9 is that the back of the body that has that the embodiment of the invention 2 provides is annotated enhancing structure I GBT sketch map.
Embodiment
Clearer for technical problem, technical scheme and beneficial effect that the present invention is solved, below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
A kind of phenomenon that conductivity modulation effect among the IGBT base conductivity that to be the P+NP bipolar transistor occurred when big injection condition is worked down increases is called the base conductivity modulation effect again.To the P+NP transistor, big when emitter junction voltage, toward the base injected minority carrier in large quantities---during the hole, a large amount of majority carriers---the accumulation of electronics is arranged also in the base correspondingly, and keeps with the hole identical concentration gradient is arranged.The doping content that this just is equivalent to increase the base makes the resistivity decreased of base; Inject big more, reduction many more.
The total conduction voltage drop of IGBT can equivalence become raceway groove pressure drop V
Ch, drift region pressure drop V
D, with diode forward pressure drop V
jSum, as shown in Figure 2.Drift region pressure drop V wherein
DThe size emitter hole that depends primarily on IGBT back side P+NP bipolar transistor inject situation, the i.e. power of conductivity modulation effect.
The present invention is mainly through changing the forward conduction voltage drop that IGBT back side pattern reduces IGBT.As shown in Figure 3, for the back of the body that has that the embodiment of the invention 1 provides is annotated the non-punch through IGBT generalized section that strengthens structure; Comprise: collector electrode C, P+ type collector area 301, N-type drift region 302, first tagma 303, second tagma 304, a N+ type emitter region 305, the 2nd N+ type emitter region 306, gate oxide 307, grid G, insulating barrier 308, emitter E.
The IGBT device up is followed successively by collector electrode C, P+ type collector area 301, N-type drift region 302 from bottom; 302 tops, said N-type drift region are followed successively by first tagma 303,304, the first tagmas 303, second tagma and second tagma 304 and are kept apart by N-type drift region 302 outstanding parts; The one N+ type emitter region 305 links to each other with the thin part in first tagma 303, the 2nd N+ type emitter region 306 links to each other with the thin part in second tagma 304; The outstanding part in gate oxide 307 and N-type drift region 302, the thin part in first tagmas 303, the thin part in second tagma 304, a N+ type emitter region 305, the 2nd N+ type emitter region 306 link to each other; Grid G links to each other with gate oxide 307; Insulating barrier 38 is between grid G and emitter E; Emitter E links to each other with first tagma 303, insulating barrier 308, second tagma 304 respectively.
Said N-type drift region 302 is provided with convex-concave structure with P+ type collector area 301 contacted faces, and corresponding P+ type collector area 301, collector electrode C also are convex-concave structure.
Being shaped as of said convex-concave structure is trapezoidal, and be as shown in Figure 9 in addition, and convex-concave structure also can be fan-shaped, and convex-concave structure can also be rectangle in addition; As long as can increase the area of collector area PN junction, and realize getting final product than being easier on the technology.
According to the difference of area thickness, said first tagma 303 can be divided into: a P type tagma, a P+ type body contact zone, and a said P type tagma is littler than a P+ type body contact zone thickness; Said second tagma 304 can be divided into: the 2nd P type tagma, the 2nd P+ type body contact zone, said the 2nd P type tagma is littler than the 2nd P+ type body contact zone thickness.
The back P+ type collector area of conventional I GBT structure is evenly distributed, and the collector area area equates with chip area.The present invention forms concavo-convex structure with the P+ collector area of IGBT structure, has increased collector area PN junction area.When the IGBT conducting, inject the hole of N-type drift region by back side diode PN junction and increase, conductivity modulation effect strengthens, and the base resistance rate reduces, thereby has reduced drift region pressure drop V
D, realized reducing the purpose of IGBT forward conduction voltage drop.In addition, because the concavo-convex pattern of back side semiconductor, make metal and semi-conductive contact area become big, reduced the ohmic contact resistance between the P+ type collector area 109 and collector electrode among the IGBT, realized the purpose of reduction IGBT forward conduction voltage drop equally.
The present invention also provides a kind of manufacturing approach that the back of the body is annotated the IGBT that strengthens structure that has, and comprises the steps:
A, utilize dry oxidation on N-type drift region, to grow to form gate oxide; Pad amasss polysilicon and polysilicon is carried out etching and forms grid on gate oxide; Utilize the autoregistration effect of polysilicon gate to carry out the ion injection in P type tagma; And the ion that passes through mask formation P+ type body contact zone injects; Utilize N+ mask ion to inject and form N+ type emitter region; The long-pending insulating barrier of pad on grid; The long-pending metal of pad forms emitter on insulating barrier and P+ type body contact zone;
B, N-type drift region is etched into convex-concave structure; Male and female face to N-type drift region carries out the ion injection, forms the P+ type collector area with convex-concave structure; P+ type collector area is metallized, form collector electrode.
For a kind of in this invention of detail knowledge more has the manufacturing approach that the back of the body is annotated the IGBT that strengthens structure, method step is specifically described in conjunction with accompanying drawing.
In the manufacturing process of IGBT, as shown in Figure 4, utilize dry oxidation on N-type drift region 408, to grow earlier and form gate oxide 405; Pad amasss polysilicon and polysilicon is formed grid G on gate oxide 504; Utilize the autoregistration effect of polysilicon gate to carry out ion injection formation P type tagma 402, and form the ion injection of P+ type body contact zone 406 through mask; Utilize N+ mask ion to inject and form N+ type emitter region 401; The long-pending insulating barrier 403 of pad; The long-pending metal of pad forms emitter E; The technology of IGBT Facad structure has just been accomplished.
When back process begins, etching is carried out in N-type drift region, obtain structure as shown in Figure 5 through traditional handicrafts such as photo-resistive mask plate and etchings.Remove photoresist and masking layer after etching is accomplished and carry out back side ion injection, as shown in Figure 6.The annealing back forms the P+ type collector area with convex-concave structure, structure as shown in Figure 7.This structure makes back side PN junction have the junction area bigger than traditional handicraft, and the hole is injected manyly when conducting, and conductivity modulation effect is stronger, and IGBT has lower forward conduction voltage drop.After back face metalization is accomplished, finally form the IGBT of structure as shown in Figure 3.
Fig. 8 has the back of the body to annotate the trench gate IGBT sketch map that strengthens structure.Forward structure is constant, and characteristics are to have N-type drift region 801, P+ type collector area 802 and the collector electrode G of convex-concave structure.When trench gate IGBT conducting, inject the hole of N-type drift region 801 by back side diode PN junction and increase, conductivity modulation effect strengthens, and the base resistance rate reduces, thereby has reduced the drift region pressure drop, has realized reducing the purpose of trench gate IGBT forward conduction voltage drop.In addition; Because the concavo-convex pattern of back side semiconductor; Make metal and semi-conductive contact area become big, reduced the ohmic contact resistance between the P+ type collector area 802 and collector electrode G among the trench gate IGBT, realized the purpose of reduction trench gate IGBT forward conduction voltage drop equally.
The N-type drift region of IGBT and contacted of P+ type collector area are convex-concave structure among the present invention, and corresponding P+ type collector area, collector electrode also are convex-concave structure.Increase the area of collector area PN junction, reached the purpose that reduces the IGBT forward conduction voltage drop.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. one kind has the IGBT that the back of the body is annotated the enhancing structure, comprising: collector electrode, P+ type collector area, N-type drift region, first tagma, second tagma, a N+ type emitter region, the 2nd N+ type emitter region, gate oxide, grid, insulating barrier, emitter;
Device up is followed successively by collector electrode, P+ type collector area, N-type drift region from bottom; Top, said N-type drift region is followed successively by first tagma, second tagma, and first tagma and second tagma are kept apart by the outstanding part in N-type drift region; The one N+ type emitter region links to each other with the thin part in first tagma, the 2nd N+ type emitter region links to each other with the thin part in second tagma; Gate oxide links to each other with the outstanding thin part in part, first tagma, the thin part in second tagma, a N+ type emitter region, the 2nd N+ type emitter region in N-type drift region; Grid links to each other with gate oxide; Insulating barrier is between grid and emitter; Emitter links to each other with first tagma, insulating barrier, second tagma respectively;
It is characterized in that: N-type drift region and the contacted face of P+ type collector area are provided with convex-concave structure, and corresponding P+ type collector area, collector electrode also are convex-concave structure.
2. the IGBT with back of the body notes enhancing structure as claimed in claim 1 is characterized in that: trapezoidal, the fan-shaped or rectangle of being shaped as of said convex-concave structure.
3. the IGBT with back of the body notes enhancing structure as claimed in claim 1, it is characterized in that: said first tagma comprises: a P type tagma, a P+ type body contact zone, a said P type tagma is littler than a P+ type body contact zone thickness; Said second tagma comprises: the 2nd P type tagma, the 2nd P+ type body contact zone, said the 2nd P type tagma is littler than the 2nd P+ type body contact zone thickness.
4. one kind has the manufacturing approach that the back of the body is annotated the IGBT that strengthens structure, it is characterized in that, comprises the steps:
A, utilize dry oxidation on N-type drift region, to grow to form gate oxide; Pad amasss polysilicon and polysilicon is carried out etching and forms grid on gate oxide; Utilize the autoregistration effect of polysilicon gate to carry out the ion injection in P type tagma; And the ion that passes through mask formation P+ type body contact zone injects; Utilize N+ mask ion to inject and form N+ type emitter region; The long-pending insulating barrier of pad on grid; The long-pending metal of pad forms emitter on insulating barrier and P+ type body contact zone;
B, N-type drift region is etched into convex-concave structure; Male and female face to N-type drift region carries out the ion injection, forms the P+ type collector area with convex-concave structure; P+ type collector area is metallized, form collector electrode.
5. the manufacturing approach with IGBT of back of the body notes enhancing structure as claimed in claim 4, it is characterized in that: said IGBT is the non-through insulated-gate bipolar transistor npn npn.
6. the manufacturing approach with IGBT of back of the body notes enhancing structure as claimed in claim 4, it is characterized in that: said IGBT is the trench gate insulated gate bipolar transistor.
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| CN102983160A (en) * | 2012-12-26 | 2013-03-20 | 无锡凤凰半导体科技有限公司 | Insulated gate bipolar transistor |
| CN103681813A (en) * | 2012-09-02 | 2014-03-26 | 朱江 | Insulated gate bipolar transistor with back groove structure and preparation method thereof |
| CN103811336A (en) * | 2014-02-21 | 2014-05-21 | 成都方舟微电子有限公司 | IGBT (Insulated Gate Bipolar Translator) power device applied at low power and manufacturing method thereof |
| CN104701355A (en) * | 2013-12-04 | 2015-06-10 | 上海华虹宏力半导体制造有限公司 | Reverse conducting igbt semiconductor device and manufacturing method thereof |
| CN105428209A (en) * | 2014-09-12 | 2016-03-23 | 英飞凌科技股份有限公司 | Semiconductor Device Arrangement And A Method For Forming A Semiconductor Device Arrangement |
| CN109273529A (en) * | 2017-07-18 | 2019-01-25 | 比亚迪股份有限公司 | MOS type power device and preparation method thereof |
| CN110676314A (en) * | 2019-10-23 | 2020-01-10 | 广东美的白色家电技术创新中心有限公司 | Insulated gate bipolar transistor, power module and domestic electrical appliance |
| US12279441B2 (en) | 2019-10-23 | 2025-04-15 | Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd. | Insulated gate bipolar transistor, power module, and living appliance |
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| CN110676314A (en) * | 2019-10-23 | 2020-01-10 | 广东美的白色家电技术创新中心有限公司 | Insulated gate bipolar transistor, power module and domestic electrical appliance |
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| CN110676314B (en) * | 2019-10-23 | 2021-05-04 | 广东美的白色家电技术创新中心有限公司 | An insulated gate bipolar transistor, a power module and a living appliance |
| US12279441B2 (en) | 2019-10-23 | 2025-04-15 | Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd. | Insulated gate bipolar transistor, power module, and living appliance |
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Application publication date: 20120321 |