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CN102384486A - Ni-Cr alloy thin film igniter with low ignition voltage and preparation method thereof - Google Patents

Ni-Cr alloy thin film igniter with low ignition voltage and preparation method thereof Download PDF

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CN102384486A
CN102384486A CN2011103107030A CN201110310703A CN102384486A CN 102384486 A CN102384486 A CN 102384486A CN 2011103107030 A CN2011103107030 A CN 2011103107030A CN 201110310703 A CN201110310703 A CN 201110310703A CN 102384486 A CN102384486 A CN 102384486A
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igniter
alloy
ignition
thin film
film
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景涛
颜志红
谢贵久
何迎辉
金忠
龙悦
吴迪
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CETC 48 Research Institute
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Abstract

本发明公开了一种低发火电压的Ni-Cr合金薄膜桥点火器及其制备方法,属于火工品技术领域,所述低发火电压的Ni-Cr合金薄膜桥点火器包括基底,所述基底上设有隔离膜,该隔离膜上设有发火元件,在发火元件设有发火器引线焊盘区;所述发火元件的材料为Ni-Cr合金。本发明采用微机械加工技术制备该点火器。本发明实现了在较低发火电压下可靠发火,点火电压低至4.8V/10μF,点火能量低至110mJ,且具有良好的抗振性能。

Figure 201110310703

The invention discloses a Ni-Cr alloy film bridge igniter with low firing voltage and a preparation method thereof, belonging to the technical field of pyrotechnics. The Ni-Cr alloy film bridge igniter with low firing voltage includes a base, and the base An isolation film is provided on the isolation film, an ignition element is arranged on the isolation film, and an igniter lead pad area is arranged on the ignition element; the material of the ignition element is Ni-Cr alloy. The invention adopts micro-machining technology to prepare the igniter. The invention realizes reliable ignition at lower ignition voltage, the ignition voltage is as low as 4.8V/10μF, the ignition energy is as low as 110mJ, and has good vibration resistance.

Figure 201110310703

Description

一种低发火电压的Ni-Cr合金薄膜桥点火器及其制备方法A Ni-Cr alloy film bridge igniter with low ignition voltage and its preparation method

技术领域 technical field

本发明属于火工品技术领域,是一种基于微机械加工技术的合金薄膜桥点火器及其制备方法。更具体地说,本发明涉及一种点火器,其点火元件由Ni-Cr合金薄膜桥组成,并且能在较低的发火电压和能量下可靠发作。The invention belongs to the technical field of pyrotechnics, and relates to an alloy film bridge igniter based on micromachining technology and a preparation method thereof. More specifically, the present invention relates to an igniter whose igniter element is composed of Ni-Cr alloy film bridges and can reliably fire at relatively low igniting voltage and energy.

背景技术 Background technique

电火工品主要包括桥丝式电火工品、薄膜桥火工品。其中薄膜桥火工品包括半导体桥火工品、金属薄膜桥火工品及爆炸薄膜桥火工品等。桥丝式火工品是人们一直普遍使用的点火方式,是由一跟悬吊式电阻加热丝和两个电极相连组成,这种技术主要存在以下几个缺点:Electrical explosives mainly include bridge wire electrical explosives and film bridge electrical explosives. The film bridge pyrotechnics include semiconductor bridge pyrotechnics, metal film bridge pyrotechnics and explosive film bridge pyrotechnics. The bridge wire pyrotechnic device is an ignition method commonly used by people. It is composed of a suspended resistance heating wire and two electrodes. This technology mainly has the following disadvantages:

a)桥丝式点火器生产中工艺一致性水平较差,在使用过程中不能准确预测点火器的性能;a) The process consistency level in the production of the bridge wire igniter is poor, and the performance of the igniter cannot be accurately predicted during use;

b)在较强的振动环境下,桥丝径向存在的拉伸作用容易导致桥丝发生变形,可能造成桥丝断裂及焊点破裂脱焊,造成点火器不能正常工作,降低桥丝式点火器可靠性水平;b) In a strong vibration environment, the radial stretching effect of the bridge wire is likely to cause the deformation of the bridge wire, which may cause the breakage of the bridge wire and the cracking and desoldering of the solder joints, resulting in the igniter not working normally and reducing the bridge wire ignition. level of device reliability;

c)桥丝式点火器不能满足低发火能量和快速发火的要求。c) The bridge wire igniter cannot meet the requirements of low ignition energy and rapid ignition.

金属薄膜桥点火器是通过物理气相淀积(PVD)方法在基片上沉积桥体材料,薄膜桥阻值大小由其几何形状决定,实际中可以通过改变薄膜桥长度、宽度及厚度获得不同的电阻值。换句话说,金属薄膜桥外形结构可以根据不同的性能要求进行设计以满足不同的功能,这是金属薄膜桥点火器最为突出的优点之一。由于金属薄膜桥点火器是将金属薄膜通过物理气相沉积的方式直接淀积在基底上,金属薄膜与基底之间的粘附力较强,并且在承受过载的过程中,金属薄膜桥径向不存在拉伸作用,不会出现金属薄膜桥的断裂及脱落等。利用微机械加工技术在基底上制备金属薄膜桥点火器,可以在一片基底上同时制造数百上千个金属薄膜桥发火元件,提高加工效率、加工重复性和加工尺寸的可控性水平,并大大降低制造成本。The metal film bridge igniter deposits the bridge material on the substrate by physical vapor deposition (PVD). The resistance value of the film bridge is determined by its geometric shape. In practice, different resistances can be obtained by changing the length, width and thickness of the film bridge. value. In other words, the shape structure of the metal film bridge can be designed according to different performance requirements to meet different functions, which is one of the most prominent advantages of the metal film bridge igniter. Since the metal film bridge igniter deposits the metal film directly on the substrate by physical vapor deposition, the adhesion between the metal film and the substrate is strong, and in the process of bearing overload, the metal film bridge does not move radially. There is a stretching effect, and there will be no breakage and shedding of the metal film bridge. The use of micromachining technology to prepare metal thin film bridge igniters on the substrate can simultaneously manufacture hundreds of thousands of metal thin film bridge ignition elements on a substrate, improve processing efficiency, processing repeatability and controllability of processing dimensions, and Greatly reduce manufacturing costs.

针对上述问题,需要一种能在较低发火电压下可靠发火的金属薄膜桥点火器。In view of the above problems, there is a need for a metal film bridge igniter that can ignite reliably at a lower ignition voltage.

发明内容 Contents of the invention

针对现有技术发火电压相对较高,发火时间相对较长的缺陷,本发明旨在提供一种Ni-Cr合金薄膜桥点火器及其制备方法,该点火器可在较低发火电压下可靠发火,且具有良好的抗振性能。Aiming at the defects of relatively high ignition voltage and relatively long ignition time in the prior art, the present invention aims to provide a Ni-Cr alloy film bridge igniter and its preparation method, which can reliably ignite at a relatively low ignition voltage , and has good anti-vibration performance.

为了实现上述目的,本发明所采用的技术方案是:所述低发火电压的Ni-Cr合金薄膜桥点火器,包括基底,其结构特点是,所述基底上设有隔离膜,该隔离膜上设有发火元件,在发火元件设有发火器引线焊盘区,所述发火元件的材料为Ni-Cr合金。In order to achieve the above object, the technical solution adopted in the present invention is: the Ni-Cr alloy film bridge igniter with low ignition voltage includes a base, and its structural feature is that an isolation film is arranged on the base, and An ignition element is provided, and the ignition element is provided with an igniter lead pad area, and the material of the ignition element is Ni-Cr alloy.

所述隔离膜为一种导热率较低的介质薄膜,优选为SiO2隔离膜,厚度为0.5μm~1μm。其中,上述基底的材料选自FR-4、聚酰亚胺、Al2O3中的至少一种,基底直径为50mm~100mm,厚度0.5mm~1mm。其中,上述发火器引线焊盘区的材料选自铝、铜、金、银中的至少一种,发火器引线焊盘区的厚度0.1μm~1μm。The isolation film is a dielectric film with low thermal conductivity, preferably a SiO2 isolation film, with a thickness of 0.5 μm˜1 μm. Wherein, the material of the substrate is selected from at least one of FR-4, polyimide, and Al 2 O 3 , the diameter of the substrate is 50mm-100mm, and the thickness is 0.5mm-1mm. Wherein, the material of the pad area of the lead wire of the igniter is selected from at least one of aluminum, copper, gold, and silver, and the thickness of the pad area of the lead wire of the igniter is 0.1 μm˜1 μm.

使用时,所述发火器引线焊盘区通过引线与一用于安装所述点火器的基座上的引线焊盘区相连。In use, the lead pad area of the igniter is connected with a lead pad area on a base for installing the igniter through wires.

进一步地,薄膜厚度作为影响点火器性能的决定性因素之一,可根据产品特性与要求决定薄膜厚度取值,以获取不同的产品性能,上述发火元件的厚度优选不大于2×10-7m~5×10-6m。Furthermore, the thickness of the film is one of the decisive factors affecting the performance of the igniter. The value of the film thickness can be determined according to the product characteristics and requirements to obtain different product performances. The thickness of the above-mentioned ignition element is preferably not greater than 2×10 -7 m~ 5×10 -6 m.

所述发火元件中Ni和Cr比例优选为80∶20。The ratio of Ni and Cr in the ignition element is preferably 80:20.

进一步地,本发明提供了一种上述低发火电压的Ni-Cr合金薄膜桥点火器的制备方法,其包括如下步骤:Further, the present invention provides a method for preparing the above-mentioned Ni-Cr alloy film bridge igniter with low ignition voltage, which comprises the following steps:

1)、对基底进行清洗,去除基底表面油污及杂质;1) Clean the substrate to remove oil and impurities on the surface of the substrate;

2)、在基底上淀积隔离膜,在隔离膜上淀积Ni-Cr合金薄膜;2), depositing an isolation film on the substrate, and depositing a Ni-Cr alloy thin film on the isolation film;

3)、在所述Ni-Cr合金薄膜上制备出光刻胶掩膜层,利用光刻胶作为掩膜材料刻蚀出发火元件,刻蚀深度为Ni-Cr合金薄膜的厚度;3), preparing a photoresist mask layer on the Ni-Cr alloy film, using photoresist as a mask material to etch the ignition element, and the etching depth is the thickness of the Ni-Cr alloy film;

4)、在发火元件层上制备出光刻胶掩膜层,利用物理气相淀积技术淀积发火器引线焊盘区;4), prepare a photoresist mask layer on the igniter element layer, and use physical vapor deposition technology to deposit the igniter lead pad area;

5)、采用切片机进行切片,制得Ni-Cr合金薄膜桥点火器。5) Slicing with a slicer to produce a Ni-Cr alloy film bridge igniter.

在所述步骤3)中,在所述Ni-Cr合金薄膜上利用光刻工艺制备出发火元件形状的光刻胶掩膜层,再利用干法刻蚀技术将Ni-Cr合金薄膜刻蚀成发火元件。In the step 3), a photoresist mask layer in the shape of an ignition element is prepared by a photolithography process on the Ni-Cr alloy film, and then a dry etching technique is used to etch the Ni-Cr alloy film into Ignition element.

在所述步骤4)中,在发火元件层上利用光刻工艺制备出发火器引线焊盘区形状的光刻胶掩膜层,利用物理气相淀积技术淀积发火器引线焊盘区。In the step 4), a photoresist mask layer in the shape of the pad area of the lead wire of the igniter is prepared on the ignition element layer by photolithography, and the pad area of the lead wire of the igniter is deposited by physical vapor deposition technology.

与现有技术相比,本发明的有益效果是:本发明采用微机械加工技术,有利于提高加工工艺的一致性和点火器使用的可靠性水平,并可实现点火器的批量生产,有效降低制造成本。本发明采用Ni-Cr合金薄膜桥,使点火电压低至4.8V/10μF,点火能量低至110mJ,满足对较低点火能量点火器件的需求。本发明采用热传导率较小的基底材料和隔离膜材料,有效较小了热量的散失,提高点火器反应速率,缩短发火时间。本发明采用离子束刻蚀技术制备Ni-Cr合金薄膜桥发火元件,可获得侧面陡直度高、片间与片内均匀性好的Ni-Cr合金薄膜桥结构,大大提高了加工工艺一致性水平和点火器工作的可靠性水平。本发明利用微机械加工技术可以在一片基底上同时制造数百上千个金属薄膜桥发火元件,提高加工效率、加工重复性和加工尺寸的可控性水平,并大大降低制造成本。Compared with the prior art, the beneficial effect of the present invention is: the present invention adopts the micromachining technology, which is conducive to improving the consistency of the processing technology and the reliability level of the igniter, and can realize the mass production of the igniter, effectively reducing the manufacturing cost. The invention adopts a Ni-Cr alloy thin film bridge, so that the ignition voltage is as low as 4.8V/10μF, and the ignition energy is as low as 110mJ, which meets the requirement for ignition devices with lower ignition energy. The invention adopts the base material and the isolation film material with lower thermal conductivity, which effectively reduces the loss of heat, improves the reaction rate of the igniter, and shortens the ignition time. The invention adopts ion beam etching technology to prepare Ni-Cr alloy thin film bridge ignition element, which can obtain Ni-Cr alloy thin film bridge structure with high side steepness and good uniformity between sheets and inside sheet, and greatly improves the consistency of processing technology level and reliability level of igniter operation. The invention utilizes the micromachining technology to simultaneously manufacture hundreds or even thousands of metal thin film bridge ignition elements on a substrate, improves processing efficiency, processing repeatability and controllability level of processing size, and greatly reduces manufacturing cost.

以下结合附图和实施例对本发明作进一步地阐述。The present invention will be further elaborated below in conjunction with the accompanying drawings and embodiments.

附图说明 Description of drawings

图1是本发明一种实施例的俯视图;Fig. 1 is a top view of an embodiment of the present invention;

图2是图1的剖面图;Fig. 2 is a sectional view of Fig. 1;

图3是图1的阵列排布俯视图;Fig. 3 is a top view of the array arrangement in Fig. 1;

图4是图1带引线焊接的俯视图;Fig. 4 is a top view of Fig. 1 with lead wire welding;

图5是本发明的点火电路示意图。Fig. 5 is a schematic diagram of the ignition circuit of the present invention.

在图中:In the picture:

1-Ni-Cr合金薄膜桥点火器;    2-基底;        3-隔离膜;1-Ni-Cr alloy film bridge igniter; 2-substrate; 3-isolation film;

4-发火元件;    5A,5B-点火器引线焊盘区;    6-引线焊盘区;4-ignition element; 5A, 5B-igniter lead pad area; 6-lead pad area;

7-基座;        8-引线。7-base; 8-lead.

具体实施方式 Detailed ways

一种低发火电压的Ni-Cr合金薄膜桥点火器,如图1~3所示,包括基底2,所述基底2上设有SiO2隔离膜3,该隔离膜3上设有厚度不大于5×10-6m的发火元件4,在发火元件4设有发火器引线焊盘区5A,5B,如图4所示,该发火器引线焊盘区5A,5B通过引线8与一用于安装所述点火器1的基座7上的引线焊盘区6相连;所述发火元件4的材料为Ni-Cr合金,其中Ni和Cr比例为80∶20。所述基底2的材料选自FR-4、聚酰亚胺、Al2O3中的至少一种;所述发火器引线焊盘区5A,5B的材料选自铝、铜、金、银中的至少一种。A Ni-Cr alloy film bridge igniter with low ignition voltage, as shown in Figures 1 to 3, includes a base 2, and the base 2 is provided with a SiO2 isolation film 3, and the isolation film 3 is provided with a thickness not greater than The ignition element 4 of 5×10 -6 m is provided with the igniter lead pad area 5A, 5B on the igniter element 4, as shown in Figure 4, the igniter lead pad area 5A, 5B is connected with a wire 8 for The lead pad area 6 on the base 7 where the igniter 1 is installed is connected; the material of the ignition element 4 is Ni-Cr alloy, wherein the ratio of Ni and Cr is 80:20. The material of the base 2 is selected from at least one of FR-4, polyimide, and Al 2 O 3 ; the material of the igniter lead pad area 5A, 5B is selected from aluminum, copper, gold, and silver. at least one of .

本发明的低发火电压的Ni-Cr合金薄膜桥点火器的制备方法,依次按照以下步骤进行:The preparation method of the Ni-Cr alloy film bridge igniter of low firing voltage of the present invention, carries out according to the following steps successively:

a)对直径50mm~100mm、厚度0.5mm~1mm的FR-4基底2进行清洗,去除基底抛光面的油污及杂质玷污等;a) cleaning the FR-4 substrate 2 with a diameter of 50 mm to 100 mm and a thickness of 0.5 mm to 1 mm to remove oil stains and impurities on the polished surface of the substrate;

b)利用离子束溅射沉积厚度0.5μm~1μm的SiO2隔离膜3,减少热量向基底2的散失,并用以增强Ni-Cr合金薄膜层与基底层2的结合力;b) using ion beam sputtering to deposit a SiO2 isolation film 3 with a thickness of 0.5 μm to 1 μm to reduce heat loss to the substrate 2 and to enhance the bonding force between the Ni-Cr alloy thin film layer and the substrate layer 2;

c)离子束溅射沉积厚度0.2μm~5μm的Ni-Cr合金薄膜层,用作发火材料;c) Ion beam sputtering deposits a Ni-Cr alloy thin film layer with a thickness of 0.2 μm to 5 μm, which is used as an ignition material;

d)在Ni-Cr合金薄膜上利用光刻工艺制作与发火元件形状的光刻胶掩膜层,利用离子束干法刻蚀工艺去除不需要的合金薄膜区域,形成Ni-Cr合金薄膜桥结构;d) On the Ni-Cr alloy film, use photolithography to make a photoresist mask layer in the shape of the firing element, and use ion beam dry etching to remove unnecessary alloy film regions to form a Ni-Cr alloy film bridge structure ;

e)利用光刻工艺制作光刻胶掩膜层,对引线压焊区域之外的薄膜层进行保护;e) Making a photoresist mask layer by using a photolithography process to protect the thin film layer outside the wire bonding area;

f)离子束溅射沉积厚度0.1μm~1μm的Au引线焊接区5A,5B,剥离清洗后完成Ni-Cr合金薄膜桥点火器1的制备。f) Ion beam sputtering deposits the Au wire bonding regions 5A, 5B with a thickness of 0.1 μm˜1 μm, and completes the preparation of the Ni—Cr alloy thin film bridge igniter 1 after stripping and cleaning.

如图5所示为本实施例所述Ni-Cr合金薄膜桥点火器点火电路示意图,本实施例所述较低发火电压的Ni-Cr合金薄膜桥点火器发火电压低于4.8V,发火能量约为110微焦,或者换句话说本发明的点火器可在1.1×10-4J这样非常低的能量下可靠发火。As shown in Figure 5, it is a schematic diagram of the ignition circuit of the Ni-Cr alloy thin film bridge igniter described in this embodiment. About 110 microjoules, or in other words, the igniter of the present invention can reliably ignite at a very low energy of 1.1×10 -4 J.

上述实施例阐明的内容应当理解为这些实施例仅用于更清楚地说明本发明,而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。The above-mentioned embodiments should be understood that these embodiments are only used to illustrate the present invention more clearly, and are not intended to limit the scope of the present invention. After reading the present invention, those skilled in the art will understand the various equivalent forms of the present invention All modifications fall within the scope defined by the appended claims of the present application.

Claims (10)

1.一种低发火电压的Ni-Cr合金薄膜桥点火器,包括基底(2),其特征是,所述基底(2)上设有隔离膜(3),该隔离膜(3)上设有发火元件(4),在发火元件(4)设有发火器引线焊盘区(5A,5B);所述发火元件(4)的材料为Ni-Cr合金。1. a kind of Ni-Cr alloy thin film bridge igniter of low firing voltage, comprise substrate (2), it is characterized in that, described substrate (2) is provided with barrier film (3), and this barrier film (3) is provided with There is an ignition element (4), and the ignition element (4) is provided with an igniter lead pad area (5A, 5B); the material of the ignition element (4) is Ni-Cr alloy. 2.根据权利要求1所述的低发火电压的Ni-Cr合金薄膜桥点火器,其特征是,该发火器引线焊盘区(5A,5B)通过引线(8)与一用于安装所述点火器(1)的基座(7)上的引线焊盘区(6)相连。2. the Ni-Cr alloy thin film bridge igniter of low ignition voltage according to claim 1, is characterized in that, this igniter lead pad area (5A, 5B) is used for installing described by lead wire (8) and one. The lead pad area (6) on the base (7) of the igniter (1) is connected. 3.根据权利要求1所述的低发火电压的Ni-Cr合金薄膜桥点火器,其特征是,所述基底(2)的材料选自FR-4、聚酰亚胺、Al2O3中的至少一种,基底(2)直径为50mm~100mm,厚度0.5mm~1mm。3. the Ni-Cr alloy film bridge igniter of low firing voltage according to claim 1, is characterized in that, the material of described substrate (2) is selected from FR-4, polyimide, Al 2 O 3 At least one of the substrates (2) has a diameter of 50 mm to 100 mm and a thickness of 0.5 mm to 1 mm. 4.根据权利要求1所述的低发火电压的Ni-Cr合金薄膜桥点火器,其特征是,所述发火器引线焊盘区(5A,5B)的材料选自铝、铜、金、银中的至少一种,发火器引线焊盘区(5A,5B)的厚度0.1μm~1μm。4. the Ni-Cr alloy thin film bridge igniter of low firing voltage according to claim 1 is characterized in that, the material of described igniter lead pad area (5A, 5B) is selected from aluminum, copper, gold, silver At least one of them, the thickness of the igniter lead pad area (5A, 5B) is 0.1 μm˜1 μm. 5.根据权利要求1所述的低发火电压的Ni-Cr合金薄膜桥点火器,其特征是,所述发火元件(4)的厚度2×10-7m~5×10-6m。5. The Ni-Cr alloy film bridge igniter with low ignition voltage according to claim 1, characterized in that the thickness of the ignition element (4) is 2×10 -7 m˜5×10 -6 m. 6.根据权利要求1所述的低发火电压的Ni-Cr合金薄膜桥点火器,其特征是,所述发火元件(4)中Ni和Cr比例为80∶20。6. The Ni-Cr alloy film bridge igniter with low ignition voltage according to claim 1, characterized in that the ratio of Ni and Cr in the ignition element (4) is 80:20. 7.根据权利要求1所述的低发火电压的Ni-Cr合金薄膜桥点火器,其特征是,所述隔离膜(3)的材料为SiO2,厚度为0.5μm~1μm。7. The Ni-Cr alloy film bridge igniter with low firing voltage according to claim 1, characterized in that the material of the isolation film (3) is SiO 2 and the thickness is 0.5 μm-1 μm. 8.一种如权利要求1~7之一所述低发火电压的Ni-Cr合金薄膜桥点火器(1)的制备方法,其特征是:其包括如下步骤:8. A method for preparing a Ni-Cr alloy film bridge igniter (1) with low ignition voltage as claimed in one of claims 1 to 7, characterized in that: it comprises the steps of: 1)、对基底(2)进行清洗,去除基底(2)表面油污及杂质;1) Clean the base (2) to remove oil and impurities on the surface of the base (2); 2)、在基底(2)上淀积隔离膜(3),在隔离膜(3)上淀积Ni-Cr合金薄膜;2), depositing an isolation film (3) on the substrate (2), and depositing a Ni-Cr alloy thin film on the isolation film (3); 3)、在所述Ni-Cr合金薄膜上制备出光刻胶掩膜层,以光刻胶作掩膜材料刻蚀出发火元件(4),刻蚀深度为Ni-Cr合金薄膜的厚度;3), prepare a photoresist mask layer on the Ni-Cr alloy film, use photoresist as a mask material to etch the ignition element (4), and the etching depth is the thickness of the Ni-Cr alloy film; 4)、在发火元件(4)层上制备出光刻胶掩膜层,利用物理气相淀积技术淀积发火器引线焊盘区(5A,5B);4), preparing a photoresist mask layer on the ignition element (4) layer, and depositing the igniter lead pad area (5A, 5B) by physical vapor deposition technology; 5)、采用切片机进行切片,制得Ni-Cr合金薄膜桥点火器(1)。5) Slicing with a microtome to prepare the Ni-Cr alloy film bridge igniter (1). 9.根据权利要求8所述的低发火电压的Ni-Cr合金薄膜桥点火器(1)的制备方法,其特征是:所述步骤3)中,在所述Ni-Cr合金薄膜上利用光刻工艺制备出发火元件(4)形状的光刻胶掩膜层,利用干法刻蚀技术将Ni-Cr合金薄膜刻蚀成发火元件(4)。9. the preparation method of the Ni-Cr alloy thin film bridge igniter (1) of low firing voltage according to claim 8 is characterized in that: in described step 3), utilize light on described Ni-Cr alloy thin film A photoresist mask layer in the shape of the ignition element (4) is prepared by an etching process, and a Ni-Cr alloy thin film is etched into the ignition element (4) by using a dry etching technique. 10.根据权利要求8所述的低发火电压的Ni-Cr合金薄膜桥点火器(1)的制备方法,其特征是:所述步骤4)中,在发火元件(4)层上利用光刻工艺制备出发火器引线焊盘区(5A,5B)形状的光刻胶掩膜层,利用物理气相淀积技术淀积发火器引线焊盘区(5A,5B)。10. the preparation method of the Ni-Cr alloy thin film bridge igniter (1) of low ignition voltage according to claim 8, it is characterized in that: in described step 4), utilize photoetching on the ignition element (4) layer The process prepares a photoresist mask layer in the shape of the pad area (5A, 5B) of the lead wire of the igniter, and deposits the pad area (5A, 5B) of the lead wire of the igniter by using a physical vapor deposition technique.
CN2011103107030A 2011-09-23 2011-09-23 Ni-Cr alloy thin film igniter with low ignition voltage and preparation method thereof Pending CN102384486A (en)

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CN102927590A (en) * 2012-10-26 2013-02-13 中国电子科技集团公司第四十八研究所 Metal film bridge igniter and preparation method thereof
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CN105674808B (en) * 2016-02-26 2017-10-31 中国振华集团云科电子有限公司 A kind of chip Alloy Foil firing resistor and preparation method thereof
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CN111174652A (en) * 2019-09-30 2020-05-19 深圳市开步电子有限公司 Detonation resistor and blasting device

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