CN102376826B - Semiconductor optoelectronic element and manufacturing method thereof - Google Patents

Abstract

The invention provides a semiconductor photoelectric element and a manufacturing method thereof. The semiconductor photoelectric element comprises an operation substrate; the semiconductor epitaxial lamination unit is arranged on the operating substrate; the semiconductor epitaxial laminated unit comprises a first semiconductor material layer with a first conductive characteristic and arranged on the operation substrate, and a second semiconductor material layer with a second conductive characteristic and arranged on the first semiconductor material layer; the transparent conducting layer is arranged on the second semiconductor material layer, comprises a first surface, a direct contact part, a second surface and a direct contact corresponding part, is arranged on the first surface, is in direct contact with the second semiconductor material layer, is substantially parallel to the first surface, and is arranged on the second surface opposite to the direct contact part; the first electrode is arranged on the operation substrate and is electrically connected with the semiconductor epitaxial lamination layer through the transparent conducting layer; the first electrode and the transparent conductive layer are electrically connected with each other through the direct contact part and the area outside the direct contact corresponding part.

Description

Semiconductor optoelectronic element and manufacturing method thereof

technical field

The invention relates to a semiconductor optoelectronic element and a manufacturing method thereof, in particular to a semiconductor optoelectronic element transferred and arranged on a carrying operation substrate and a manufacturing method of the semiconductor optoelectronic element.

Background technique

With the rapid development of science and technology, semiconductor optoelectronic components have made great contributions to the transmission of information and the conversion of energy. Taking the application of systems as an example, such as optical fiber communication, optical storage and military systems, etc., semiconductor optoelectronic components can all play a role. Divided by the way of energy conversion, semiconductor optoelectronic components can generally be divided into three categories: converting electrical energy into light emission, such as light-emitting diodes and laser diodes; converting light signals into electrical signals, such as photodetectors; The radiant energy is converted into electrical energy, such as solar cells.

In semiconductor optoelectronic devices, the growth substrate plays a very important role. The necessary semiconductor epitaxial structures for forming semiconductor optoelectronic devices are all grown on the substrate, and are supported by the substrate. Therefore, selecting a suitable growth substrate often becomes an important factor in determining the growth quality of semiconductor optoelectronic components.

However, sometimes a good component growth substrate is not necessarily a good component carrier substrate. Taking light-emitting diodes as an example, in the known process of red light components, in order to improve the growth quality of the components, a GaAs substrate whose lattice constant is close to that of the semiconductor epitaxial structure but is opaque is selected as the growth substrate. However, for the light-emitting diode device whose operation purpose is to emit light, the opaque growth substrate will cause the luminous efficiency of the device to decrease during the operation process.

In order to meet the different requirements of semiconductor optoelectronic components for growth substrates and carrier substrates, substrate transfer technology has emerged accordingly. That is, the semiconductor epitaxial structure is grown on the growth substrate first, and then the grown semiconductor epitaxial structure is transferred to the carrier substrate to facilitate subsequent device operations. After the semiconductor epitaxial structure is combined with the carrier substrate, the removal of the original growth substrate becomes one of the keys of this transfer technology.

The known removal methods of the growth substrate mainly include etching and dissolving the original growth substrate with an etching solution, cutting and grinding off the original growth substrate in a physical way, or generating a sacrificial layer between the growth substrate and the semiconductor epitaxial structure in advance, and then removing the sacrificial layer by etching The way to separate the growth substrate from the semiconductor, etc. However, whether the substrate is dissolved by etching solution or the substrate is removed by physical cutting, it is a kind of damage to the original growth substrate. The growth substrate cannot be reused. In the modern world that emphasizes environmental protection and energy saving, it is undoubtedly a waste of materials. However, if a sacrificial layer structure is used for separation, how to effectively perform selective transfer for semiconductor photoelectric elements is one of the current research directions.

Contents of the invention

In order to selectively transfer semiconductor optoelectronic elements efficiently, the present invention provides a semiconductor optoelectronic element and its manufacturing method, especially a semiconductor optoelectronic element transferred on an operating substrate and a manufacturing method of the semiconductor optoelectronic element.

An embodiment of the present invention provides a semiconductor optoelectronic element, comprising: an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate, including a first semiconductor material layer having a first conductive characteristic disposed on the operating substrate, and an On the first semiconductor material layer, a second semiconductor material layer with second conductive properties; a transparent conductive layer, disposed on the second semiconductor material layer, the transparent conductive layer includes a first surface and a direct contact portion, disposed on the first surface And in direct contact with the second semiconductor material layer, the second surface is substantially parallel to the first surface, and directly contacts the corresponding part, and is arranged on the second surface opposite to the direct contact part; and the first electrode is arranged on the operation substrate, through transparent conduction The layer is electrically connected with the semiconductor epitaxial stack unit; wherein, the first electrode and the transparent conductive layer are electrically connected to each other through the direct contact part and the area other than the direct contact corresponding part.

According to an embodiment of the present invention, the semiconductor epitaxial stack unit further includes a light emitting layer disposed between the first semiconductor material layer and the second semiconductor material layer.

According to an embodiment of the present invention, wherein the semiconductor optoelectronic element is a light emitting diode.

According to an embodiment of the present invention, it further includes a second electrode disposed between the operation substrate and the semiconductor epitaxial stack unit or on the opposite side of the operation substrate to the semiconductor epitaxial stack unit.

According to an embodiment of the present invention, the light transmittance of the transparent conductive layer is greater than 90%.

According to an embodiment of the present invention, wherein the semiconductor photoelectric element is a solar cell.

According to an embodiment of the present invention, wherein the material of the transparent conductive layer is selected from indium tin oxide, cadmium tin oxide, zinc oxide, indium oxide, tin oxide, copper aluminum oxide, copper gallium oxide, strontium copper oxide, aluminum zinc oxide, A group consisting of zinc gallium oxide and any combination of the above materials.

According to an embodiment of the present invention, it further includes a plurality of metal wires extending from the first electrode to directly contacting corresponding portions of the transparent conductive layer.

According to an embodiment of the present invention, wherein the metal wire has a width less than 20 μm.

According to an embodiment of the present invention, the first electrode and the metal wire are made of different materials.

According to an embodiment of the present invention, the material of the first electrode is a single-layer or multi-layer metal structure composed of titanium, aluminum, gold, chromium, nickel, germanium or any alloy thereof.

According to an embodiment of the present invention, the handle substrate further has a rough surface facing the semiconductor epitaxial stack unit, and the rough surface includes at least one protrusion and/or at least one cavity.

Another embodiment of the present invention provides a method for manufacturing a semiconductor optoelectronic element, including providing a growth substrate; forming a sacrificial layer on the growth substrate; forming a semiconductor epitaxial stack on the sacrificial layer; separating the semiconductor epitaxial stack into a plurality of semiconductor epitaxial stacks Stack the unit and expose the sacrificial layer under the semiconductor epitaxial stack unit; form a patterned photoresist to cover part of the semiconductor epitaxial stack unit and part of the exposed sacrificial layer; remove the unpatterned photoresist Covering the sacrificial layer; providing a transfer structure to transfer the semiconductor epitaxial stack unit with the lower sacrificial layer removed to the transfer structure; providing an operation substrate with a plurality of electrode regions and a plurality of epitaxial regions, the electrode regions and the epitaxial regions are specified The distance is separated; the semiconductor epitaxial stack unit on the transfer structure is transferred to the epitaxial region of the operation substrate; and a plurality of first electrodes are formed on the electrode region of the operation substrate, and the first electrodes are electrically connected to the transferred semiconductor epitaxial stack unit. sexual connection.

According to another embodiment of the present invention, the material of the growth substrate is selected from sapphire (Al ₂ O ₃ ), silicon (Si), silicon carbide (SiC), gallium nitride (GaN) and gallium arsenide (GaAs) composed of ethnic groups.

According to another embodiment of the present invention, the material of the growth substrate is selected from the group consisting of PCB substrate and FR4 substrate.

According to another embodiment of the present invention, the transfer structure is mainly composed of organic polymer materials.

According to another embodiment of the present invention, it further includes forming an adhesive layer between the operation substrate and the semiconductor epitaxial stack unit, the material of the adhesive layer is selected from the group consisting of organic polymer materials, metal materials and metal alloys.

According to another embodiment of the present invention, wherein the semiconductor epitaxial stack unit is a light emitting diode epitaxial stack area and/or a solar cell epitaxial stack area.

According to another embodiment of the present invention, the method further includes roughening the surface of the operation substrate, so that the surface includes at least one protrusion and/or at least one concave hole.

According to another embodiment of the present invention, the material of the operating substrate is selected from sapphire (Al ₂ O ₃ ), silicon (Si), silicon carbide (SiC), aluminum nitride (AlN), gallium nitride (GaN) and the group consisting of gallium arsenide (GaAs).

According to another embodiment of the present invention, it further includes forming at least one second electrode between the semiconductor epitaxial stack unit and the handle substrate or the side of the handle substrate opposite to the semiconductor epitaxial stack unit.

According to another embodiment of the present invention, wherein the transfer structure has a transfer surface having adhesiveness and/or at least one protrusion corresponding to the semiconductor epitaxial stack unit from which the underlying sacrificial layer is removed.

Another embodiment of the present invention provides a light emitting diode element structure, including an operation substrate, having a surface, including a plurality of first epitaxial regions and a plurality of second epitaxial regions; a plurality of first light emitting diode epitaxial stacked units are arranged on the first On an epitaxial region, the first main emission wavelength can be radiated, wherein any one of the first light-emitting diode epitaxial stacked units is parallel to the first side of the surface of the operating substrate, and the extension lines of the first side have a first extension direction that is substantially parallel to each other a plurality of second light-emitting diode epitaxial stacked units are arranged on the second epitaxial region, and can emit the second main emission wavelength, wherein any second light-emitting diode epitaxial stacked unit has a second side corresponding to the first side, And the extension lines of the second sides have second extension directions that are substantially parallel to each other; and the first direction is parallel to the surface of the operation substrate, wherein the first extension direction and the first direction have an included angle θ ₁ , and the second extension direction and the first direction One direction has an included angle θ ₂ , and θ ₁ is not equal to θ ₂ .

According to yet another embodiment of the present invention, wherein the first dominant emission wavelength is between 600 nm and 650 nm.

According to yet another embodiment of the present invention, wherein the first dominant emission wavelength is between 510 nm and 550 nm.

According to yet another embodiment of the present invention, wherein the first dominant emission wavelength is between 390 nm and 440 nm.

According to yet another embodiment of the present invention, wherein the first main emission wavelength is not equal to the second main emission wavelength.

According to yet another embodiment of the present invention, any one of the first light-emitting diode epitaxial stack unit and any second light-emitting diode epitaxial stack unit further includes a semiconductor epitaxial stack disposed on the surface of the operating substrate, and the semiconductor epitaxial stack It includes a first semiconductor material layer with a first conductive characteristic arranged on the surface of the operation substrate; a second semiconductor material layer with a second conductive characteristic arranged on the first semiconductor material layer; and a light emitting layer arranged on the first semiconductor material layer. Between the semiconductor material layer and the second semiconductor material layer.

According to yet another embodiment of the present invention, any one of the first light-emitting diode epitaxial stack units and/or any second light-emitting diode epitaxial stack units further include a first electrode disposed on the semiconductor epitaxial stack unit corresponding to the operation The opposite side of the substrate, between the surface of the semiconductor epitaxial stack unit and the handle substrate, or the opposite side of the handle substrate to the semiconductor epitaxial stack unit.

Description of drawings

1A is a schematic diagram showing a schematic side view of the first step of the semiconductor optoelectronic device manufacturing method;

1B is a schematic diagram showing a schematic top view of the first step of the semiconductor optoelectronic device manufacturing method;

Fig. 1C is a schematic diagram showing a schematic side view cut according to the C-C' line segment of top view 1B;

FIG. 2 is a schematic diagram showing a schematic top view of a colorful display device;

3A is a schematic diagram showing a schematic top view of the second step of the semiconductor optoelectronic device manufacturing method;

Fig. 3B is a schematic diagram showing a side view of the second step of cutting according to the B-B' line segment of the plan view 3A;

3C is a schematic diagram showing a partial side view of the third step of the semiconductor optoelectronic device manufacturing method;

FIG. 4A is a schematic diagram showing a partial side view of the fourth step of the semiconductor optoelectronic device manufacturing method;

4B is a schematic diagram showing a schematic side view of an optional step in the fourth step of the semiconductor optoelectronic device manufacturing method;

4C is a schematic diagram showing a schematic side view of an optional step in the fourth step of the semiconductor optoelectronic device manufacturing method;

4D is a schematic diagram showing a schematic side view of an optional step in the fourth step of the semiconductor optoelectronic device manufacturing method;

4E is a schematic diagram showing a schematic side view of an optional step in the fourth step of the semiconductor optoelectronic device manufacturing method;

5A is a schematic diagram showing a schematic top view of the fifth step of the semiconductor optoelectronic device manufacturing method;

Fig. 5B is a schematic diagram showing a side view schematic diagram of the fifth step of cutting according to the B-B' line segment of the plan view 5A;

6 is a schematic diagram showing a schematic top view of the sixth step of the semiconductor optoelectronic device manufacturing method;

7A is a schematic diagram showing a schematic side view of the structure of a semiconductor photoelectric element according to another embodiment of the present invention;

7B is a schematic diagram showing a schematic side view of a portion of the semiconductor epitaxial stack unit 4 according to the side view 7A;

7C is a schematic diagram showing a perspective view of the semiconductor epitaxial stack unit 4 and the transparent conductive layer 16 according to the side view 7A;

Fig. 8 is a schematic diagram showing a schematic side view of the structure of a semiconductor photoelectric element according to another embodiment of the present invention;

FIG. 9A is a schematic diagram showing a side view of a structure of a light emitting diode element according to another embodiment of the present invention;

9B is a schematic diagram showing a schematic side view of the semiconductor epitaxial stack unit part according to the side view 9A;

FIG. 10 is a schematic diagram showing a side view of the structure of a light emitting diode device according to another embodiment of the present invention.

Explanation of reference signs

1: growth substrate;

2: sacrificial layer;

2': Sacrificial layer side wall;

3: Semiconductor epitaxy stack;

4: Semiconductor epitaxy stack unit;

4': the first semiconductor epitaxial stack unit;

4": the second semiconductor epitaxial stack unit;

5: patterning photoresist layer;

6, 6": transfer structure;

6': transfer surface;

7: Operating the substrate;

7": operation substrate surface;

8: electrode area;

9: extension area;

10: Adhesive layer;

11: the first electrode;

12: metal wire;

13: a first semiconductor material layer;

14: a second semiconductor material layer;

15: luminous layer;

16: transparent conductive layer;

16': first surface;

16": second surface;

17: insulating layer;

18: direct contact part;

18': direct contact with the corresponding part;

19: the first epitaxial region;

20, 30: semiconductor optoelectronic components;

21: the second epitaxial region;

22: the first light-emitting diode epitaxial stack unit;

23: the second light-emitting diode epitaxial stack unit;

24: first direction;

25, 27: the first side;

26: first extension direction;

28: second extension direction;

40, 50: LED structure;

61: protrusions on the transfer surface;

62: protrusions on the transfer surface;

71: operate the lower surface of the substrate;

101: Red light semiconductor epitaxial stack unit;

102: Green light semiconductor epitaxial stack unit;

103: Blu-ray semiconductor epitaxial stack unit.

Detailed ways

Please refer to FIG. 1 . FIG. 1 is a manufacturing method of a semiconductor optoelectronic device according to an embodiment of the present invention. First, according to the side view 1A, a growth substrate 1 is firstly provided, and a sacrificial layer 2 is formed on the growth substrate 1 , and then a semiconductor epitaxial stack 3 is formed on the sacrificial layer 2 . Wherein, the material of the growth substrate 1 can be selected from the group consisting of sapphire (Al ₂ O ₃ ), silicon (Si), silicon carbide (SiC), gallium nitride (GaN) and gallium arsenide (GaAs), for example, The material of the sacrificial layer 2 can be, for example, aluminum arsenide (AlAs), gallium arsenide (AlGaAs), and zinc oxide (ZnO), and the semiconductor epitaxial stack 3 can be, for example, a light emitting diode epitaxial stack and/or a solar cell epitaxial stack. Next, please refer to the top view 1B and the side view 1C respectively, and divide the semiconductor epitaxial stack into a plurality of semiconductor epitaxial stack units 4 by known manufacturing methods, such as dry etching, wet etching or laser cutting. After separation, as shown in FIG. 1C , the sidewalls 2 ′ of the sacrificial layer 2 under the plurality of semiconductor epitaxial stacked units 4 are exposed. Likewise, the semiconductor epitaxial stack unit 4 may be, for example, a light emitting diode epitaxial stack area and/or a solar cell epitaxial stack area.

After forming a plurality of semiconductor epitaxial stacked units 4 on the growth substrate 1 in the above manner, the semiconductor epitaxial stacked units 4 will selectively transfer the semiconductor epitaxial stacked units to the operating substrate according to subsequent processes or application requirements. Taking FIG. 2 as an example, it shows a multicolor display device composed of a red semiconductor epitaxial stack unit 101 , a green semiconductor epitaxial stack unit 102 , and a blue semiconductor epitaxial stack unit 103 . In order to cooperate with this colorful display device, when multiple semiconductor epitaxial stacked units 4 on the growth substrate radiate red wavelengths, according to the configuration of the red semiconductor epitaxial stacked units 101 on the colorful display device, the semiconductor epitaxial stacked units 4 will alternate The ground is selectively transferred from the growth substrate 1 to the operation substrate, that is, the multi-color display device.

The transfer process is as described in FIGS. 3A to 3C . The second semiconductor epitaxial stack unit 4 ″ that needs to be transferred and the first semiconductor epitaxial stack unit 4 ′ that does not need to be transferred are covered by different photoresists. The method can reach the effect of selective transfer according to the subsequent steps. In order to selectively transfer the semiconductor epitaxial stack unit 4 of a specific part, as shown in the side view 3B of the BB' line segment in the top view 3A and the top view 3A, pattern Thinned photoresist layer 5 covers part of the semiconductor epitaxial stack unit 4: for the first semiconductor epitaxial stack unit 4' that does not need to be transferred, it covers the surface containing the semiconductor epitaxial stack and its lower surface in a completely covered manner Exposed sidewalls 2' of the sacrificial layer; for the second semiconductor epitaxial stacked unit 4" to be transferred, the covering part achieves the effect of simple fixation and exposes the sidewalls 2' of the sacrificial layer. Then, use a known etching technique, such as wet etching, to remove the sacrificial layer 2 under the second semiconductor epitaxial stack unit 4" through the exposed sacrificial layer sidewall 2' with an etching solution. After this step, part of the semiconductor The sacrificial layer 2 below the epitaxial stack unit 4 is selectively removed, as shown in side view 3C, which shows the result of part of the sacrificial layer 2 being removed after the removal step on line segment BB' in top view 3A.

In this way, when all the semiconductor epitaxial stacked units 4 on the growth substrate are removed, the original growth substrate can be reused after going through the normal cleaning process because it has not been damaged.

In addition, wet oxygen etching can also be used to oxidize the material of the sacrificial layer 2 by adding high-temperature and high-humidity oxygen, so that the volume of the material of the sacrificial layer 2 itself expands, reducing the distance between the sacrificial layer 2 and the semiconductor epitaxial stack unit 4. Adhesion (not shown in the figure), and can actively separate the semiconductor epitaxial stack unit 4 from the sacrificial layer 2 . After the two are separated from each other, the partially oxidized sacrificial layer 2 remaining on the surface of the semiconductor epitaxial stack unit 4 is removed with an etching solution.

In order to effectively and selectively transfer the part of the semiconductor epitaxial stack unit removed from the lower sacrificial layer 2, that is, the second semiconductor epitaxial stack unit 4″, the transfer process is performed using the transfer structure 6. The material of the transfer structure 6 is mainly made of organic high Composed of molecular materials, such as foam glue or PI adhesive tape (tape). The transfer structure 6 has a transfer surface 6' towards the semiconductor epitaxial stack unit 4, wherein the transfer surface 6' can be an adhesive surface or include at least one The protrusion 61 corresponding to the second semiconductor epitaxial stack unit 4" to be transferred. Through the adhesive force of the transfer surface 6' or by the electrostatic attraction generated by the charge accumulated between the transfer surface protrusion 61 and the surface of the second semiconductor epitaxial stack unit 4", the second semiconductor epitaxial stack can be selectively The unit 4" is adsorbed, and the second semiconductor epitaxial stack unit 4" is transferred to the transfer structure 6, as shown in FIG. 4A.

In addition, part of the patterned photoresist layer 5 is still attached to the second semiconductor epitaxial stack 4" transferred to the transfer structure 6. Therefore, in order to remove the patterned photoresist layer 5 or according to the structural design requirements When it is necessary to place the second semiconductor epitaxial stack unit 4" upside down on the handle substrate, the secondary transfer technique can be selectively performed. That is, as shown in FIGS. 4B to 4D, when the second semiconductor epitaxial stack unit 4" is transferred to the transfer structure 6, the patterned photoresist that originally covered part of the upper surface of the second semiconductor epitaxial stack unit 4" The agent layer 5 is still attached to the second semiconductor epitaxial stack unit 4" and the transfer structure 6 has not been removed. At this time, the second semiconductor epitaxial stack unit 4" on the transfer structure 6 can be transferred to the second transfer structure 6", after removing the patterned photoresist layer 5 still attached to the second semiconductor epitaxial stack unit 4" with a photoresist remover, a second transfer is performed to transfer the second transfer structure 6". The second semiconductor epitaxial stack unit 4 ″ is transferred onto the handle substrate 7 . Similarly, the material of the second transfer structure 6" is mainly composed of organic polymer materials, such as styrofoam or PI tape. The second transfer structure 6" has a transfer surface facing the transferred semiconductor epitaxial stack unit 4" , wherein the transfer surface may be an adhesive surface or include at least one protrusion 62 corresponding to the second semiconductor epitaxial stack unit 4" to be transferred. Through the adhesive force on the surface of the second transfer structure 6" or the electrostatic attraction generated by the charge accumulated between the protrusion 62 on the transfer surface and the surface of the second semiconductor epitaxial stack unit 4", selectively to the second semiconductor epitaxial The stacked unit 4" is adsorbed again to transfer the second semiconductor epitaxial stacked unit 4" to the second transfer structure 6".

Finally, as shown in FIG. 4E , the second semiconductor epitaxial unit 4 ″ is transferred from the second transfer structure 6 ″ to the operation substrate 7 . Of course, if only one transfer step is performed, the second semiconductor epitaxial unit 4 ″ can also be directly transferred from the transfer structure 6 to the operation substrate 7 in a similar manner.

As shown in FIG. 5A , there are a plurality of electrode regions 8 and a plurality of epitaxial regions 9 on the operating substrate 7, wherein the electrode regions 8 and the epitaxial regions 9 are separated by a certain distance, and the material of the operating substrate 7 can be, for example, sapphire (Al ₂ O ₃ ), silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or aluminum nitride (AlN). Alternatively, the operation substrate 7 is a PCB substrate or an FR4 substrate. The FR4 substrate is a glass cloth substrate, which is a plate-shaped laminated product made of glass cloth impregnated with epoxy phenolic resin and other materials and subjected to high temperature and high pressure hot pressing. A plurality of second semiconductor epitaxial stacked units 4" placed on the transfer structure 6 (or the second transfer structure 6") is transferred to the operation substrate 7 by, for example, forming an adhesive layer 10 on the operation substrate 7 and the first operation substrate. Between the two semiconductor epitaxial stack units 4", the operation substrate 7 is adhered to the second semiconductor epitaxial stack unit 4" by means of heating. Because of the effect of heating, the adsorption force between the second semiconductor epitaxial stack unit 4 "and the transfer structure 6 (6 ") can be reduced (the adhesiveness of the transfer surface 6' is reduced due to heating), and the adhesive layer 10 The adsorption force of the second semiconductor epitaxial stack unit 4 ″ and the handling substrate 7 can transfer the second semiconductor epitaxial stack unit 4 ″ from the transfer structure 6 (6 ″) to the handling substrate 7. Wherein, the adhesive layer 10 The material can be an organic polymer material, a metal material or a metal alloy material. In addition, in order to increase the light extraction efficiency of the element or other purposes, it is also possible to selectively roughen the surface 7" of the operating substrate 7, so that the surface 7" includes At least one protrusion (not shown) and/or at least one cavity (not shown).As shown in BB' line segment side view 5B among Fig. 5A, selectively transfer part of the second semiconductor epitaxial stack unit 4 " It is on the epitaxial region 9 of the operation substrate 7 and is separated from the electrode region 8 by a specific distance.

Finally, as shown in FIG. 6, a first electrode 11 is formed on the electrode region 8 of the operation substrate 7, and the first electrode 11 passes through a metal wire 12 extending from its body or through other conductive media, such as indium tin oxide, oxide Transparent conductive materials such as cadmium tin, zinc oxide, indium oxide, tin oxide, copper aluminum oxide, copper gallium oxide, strontium copper oxide, aluminum zinc oxide, zinc gallium oxide or any combination of the above materials are transferred and arranged in the corresponding epitaxial The second semiconductor epitaxial stack units 4" in the region 9 are electrically connected to each other.

In addition, in order to achieve the purpose of conducting the element, the manufacturing step may also include forming a second electrode (not shown) between the second semiconductor epitaxial stack unit 4" and the operation substrate 7 or between the operation substrate 7 and the second semiconductor epitaxial stack. Opposite side of layer unit 4".

Please refer to FIG. 7A and FIG. 8 , which are side views of a single semiconductor optoelectronic device 20 and a semiconductor optoelectronic device 30 manufactured according to the above manufacturing method according to the spirit of the present invention. The semiconductor optoelectronic elements 20 and 30 can be, for example, solar cells or light emitting diodes.

As shown in FIGS. 7A to 7C , the semiconductor photoelectric element 20 includes an operating substrate 7 , and the semiconductor epitaxial stack unit 4 is disposed on the operating substrate 7 . Next, enlarge the semiconductor epitaxial stack unit 4, as shown in FIG. 7B, the semiconductor epitaxial stack unit 4 includes a first semiconductor material layer 13 with a first conductivity characteristic, such as a p-type semiconductor material layer, disposed on the operation substrate 7 , and disposed on the first semiconductor material layer 13, the second semiconductor material layer 14 having a second conductivity characteristic is, for example, an n-type semiconductor material layer. When the semiconductor optoelectronic elements 20 and 30 are light emitting diode elements, the semiconductor epitaxial stack unit 4 may further include a light emitting layer 15 disposed between the first semiconductor material layer 13 and the second semiconductor material layer 14 .

Referring to FIG. 7A , the semiconductor optoelectronic element 20 also includes a transparent conductive layer 16 disposed on the operating substrate 7 . The transparent conductive layer 16 includes a first surface 16' and a second surface 16" substantially parallel to the first surface. On the first surface 16', the second semiconductor material layer 14 is partially in direct contact with the transparent conductive layer 16, defined as a Direct contact portion 18. The position of the direct contact portion of the second surface 16" relative to the first surface 16' is referred to as a direct contact corresponding portion 18', as shown in enlarged view in FIG. 7C. Please note that FIG. 7C clearly shows the relative position where the transparent conductive layer 16 is in contact with the second semiconductor material layer 14 in the semiconductor epitaxial stack unit 4 , so the two are slightly separated, but they are substantially in contact with each other. Wherein, the material of the transparent conductive layer 16 can be indium tin oxide, cadmium tin oxide, zinc oxide, indium oxide, tin oxide, copper aluminum oxide, copper gallium oxide, strontium copper oxide, aluminum zinc oxide, zinc gallium oxide or the above materials random combination. In order to increase the light-emitting or light-absorbing efficiency of the element, in a preferred situation, the light transmission efficiency of the transparent conductive layer 16 covering the semiconductor epitaxial stack unit 4 should be greater than 90%.

Continuing to refer to FIG. 7A , in order to achieve the electrical connection between the element and the outside world, in this embodiment, on the operation substrate 7 , there is also a first electrode 11 arranged on the transparent conductive layer 16 and the direct contact portion 18 and the direct contact portion 18 Areas other than the contact corresponding portion 18 ′ are electrically connected to the semiconductor epitaxial stack unit 4 through the transparent conductive layer 16 . Through such a design, since the semiconductor epitaxial stack unit 4 is covered with a transparent material, the efficiency of the semiconductor photoelectric element 20 in terms of light output or light absorption can be greatly improved. It is worth noting that, in order to increase the stability and efficiency of the device structure, part of the surface of the semiconductor epitaxial stack unit 4 can also be selectively protected with an insulating material layer 17. The insulating material can be, for example, common silicon oxide or silicon nitride. Material. In addition, as described in the above manufacturing method, in this structure, an adhesive layer 10 can also be optionally provided between the semiconductor epitaxial stack unit 4 and the handle substrate 7 to achieve the effect of mutual adhesion.

Referring next to FIG. 8 , FIG. 8 is another semiconductor optoelectronic device 30 fabricated according to the spirit of the present invention. In this embodiment, the structure similar to that of the previous embodiment will not be repeated. The difference is that in this embodiment, the first electrode 11 on the semiconductor optoelectronic element 30 also includes a plurality of metal wires 12 extending from the first electrode to directly contact the corresponding portion 18', which increases the resistance of the element through the lower resistance of the metal. For the conductivity efficiency, its top view can be referred to FIG. 6 together. Wherein, the material of the first electrode 11 can be a single-layer or multi-layer metal structure composed of titanium, aluminum, gold, chromium, nickel, germanium, or any of the above-mentioned alloys. The metal wire 12 preferably has a width less than 20 μm, and the metal wire 12 can also be selectively made of different materials from the first electrode 11 .

In addition, in order to achieve the purpose of element conduction, the structure may also include forming a second electrode (not shown) between the semiconductor epitaxial stack unit 4 and the operation substrate 7 or the operation substrate 7 on the opposite side to the semiconductor epitaxial stack unit 4 , that is, the lower surface 71 of the operating substrate. In order to increase the light extraction efficiency of the device or other purposes, the surface of the operating substrate 7 may also include a roughened structure with at least one protrusion (not shown) and/or at least one concave hole (not shown).

FIG. 9A shows an LED structure 40 fabricated according to the spirit of the present invention. In the structure 40, the operation substrate 7 is included, and the operation substrate 7 has a surface 7 ", and the surface includes a plurality of first epitaxial regions 19 and a plurality of second epitaxial regions 21. Each of the epitaxial regions includes one of the above-mentioned semiconductor photoelectric Components (light-emitting diode elements here). That is to say, each epitaxial region includes a light-emitting diode epitaxial stacked unit. It is worth noting that the first epitaxial region 19 includes the first The first light-emitting diode epitaxial stack unit 22 of the main emission wavelength, in this embodiment, the first main emission wavelength is to emit red light, and the wavelength is between 600nm and 650nm. Of course, according to different requirements, the first main emission wavelength Or it can be green light, the wavelength is between 510nm and 550nm, or it can be blue light, the wavelength is between 390nm and 440nm; and the second epitaxial region 21 includes the second main emission wavelength. Light-emitting diode epitaxial stack unit 23, in the present embodiment, the second main emission wavelength is to emit green light, and the wavelength is between 510nm and 550nm. As can be seen from the embodiment, the first main emission wavelength may not be equal to the second main emission wavelength .

Through the manufacturing method of the semiconductor optoelectronic element described in the above-mentioned embodiments, even if there are two (such as this structure 40) or more different epitaxial stacked units (here, light-emitting diodes with different main emission wavelengths) on a single operation substrate Epitaxial stacked units) can be easily transferred according to the needs once, and can selectively transfer multiple light-emitting diode epitaxial stacked units grown on a single same growth substrate at different positions but emitting the same main emission wavelength from the growth substrate to the operating board. Therefore, taking the structure 40 in FIG. 9A as an example, only two transfer operations are required, that is, the first transfer of the red epitaxial stack unit from the growth substrate for growing the red light emitting diode element, and the second transfer of the green light emitting diode from the growth substrate. By transferring the green light epitaxial stacking unit from the growth substrate of the component, the preliminary structure of all the epitaxial stacking units on the operating substrate can be completed, without the need for manual selection or robotic arm clamping, etc. to transfer unit by unit, which can shorten Craft time.

Similarly, please refer to FIG. 9B, in the LED structure 40, each of the LED epitaxial stack units 22 and 23 respectively includes a first semiconductor material layer 13 having a first conductivity characteristic, such as a p-type semiconductor material layer, Arranged on the first semiconductor material layer 13, the second semiconductor material layer 14 having a second conductivity characteristic, such as an n-type semiconductor material layer, and the light emitting layer 15 are arranged on the first semiconductor material layer 13 and the second semiconductor material layer. Between layers 14.

In addition, as described in the above-mentioned embodiments, in order to achieve the purpose of element conduction, in the structure 40, each first light-emitting diode epitaxial stack unit 22 and/or the second light-emitting diode epitaxial stack unit 23 may further include a first An electrode (not shown) is disposed on the opposite side of the semiconductor epitaxial stack unit relative to the operation substrate 7, in this embodiment, it is disposed on the semiconductor epitaxial stack unit; or disposed on the semiconductor epitaxial stack unit and between the surface 7" of the operation substrate 7; or the opposite side of the operation substrate 7 relative to the semiconductor epitaxial stack unit, that is, the lower surface of the operation substrate. In order to increase the light extraction efficiency of the element or other purposes, the surface of the operation substrate 7 is also A roughened structure having at least one protrusion (not shown) and/or at least one cavity (not shown) may be included.

It is worth noting that every time the transfer process is performed, there is a possibility of alignment errors between the operation substrate 7 and the transfer structure 6 (6"). Therefore, the light-emitting diode structure that undergoes the selective transfer process will likely occur Situation as shown in Fig. 10. Taking light emitting diode structure 50 as an example, defining first direction 24 to operate parallel to the surface 7 of substrate 7", because the first light emitting diode epitaxial stacked unit 22 that radiates the first main emission wavelength is transferred at the same time During the process, they are transferred to the operation substrate 7 together. Therefore, the angle deviation of the transfer structure itself will indirectly affect the situation that all the first light-emitting diode epitaxial stacked units 22 attached to the transfer structure produce the same alignment angle deviation together. . Similarly, the second light-emitting diode epitaxial stack unit 23 emitting the second main emission wavelength is transferred to the handle substrate 7 together in the same transfer process, so the same alignment angle offset may also be generated together . Taking one of the first light-emitting diode epitaxial stack units 22 as an example, there is any first side 25 parallel to the surface 7" of the operating substrate 7. For each first side of the first light-emitting diode epitaxial stack unit 22 25 as an extension line, it will be found that all the extension lines will have a substantially parallel first extension direction 26. Similarly, taking any one of the second light-emitting diode epitaxial stacked unit 23 as an example, there will be a corresponding to the first light-emitting The diode epitaxial stack unit 22 is parallel to the first side 27 of the surface 7 ″ of the operating substrate 7 . By drawing extension lines from the first side 27 of each second LED epitaxial stack unit 23 , it can be found that all the extension lines have second extension directions 28 that are substantially parallel. Since the alignment angle offsets produced by the two transfers are not the same, based on the originally defined first direction 24, the first extension direction 26 and the first direction 24 will form an angle θ ₁ , while the second extension Another included angle θ ₂ is formed between the direction 28 and the first direction 24 , and θ ₁ is not equal to θ ₂ . In this embodiment, θ ₁ is approximately equal to 70 degrees and θ ₂ is approximately equal to 90 degrees.

Through the above description, it can be understood that the method for transferring semiconductor optoelectronic elements disclosed in the present invention can not only keep the growth substrate of semiconductor optoelectronic elements intact and can be reused, but also can selectively transfer multiple A semiconductor optoelectronic element unit is placed on the operation substrate, which simplifies the process. This method has the good effect of saving costs and shortening the process time for the manufacture of multi-color light-emitting elements or multi-color displays under development.

The various embodiments listed in the present invention are only used to illustrate the present invention, and are not intended to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention will not depart from the spirit and scope of the present invention.

Claims (10)

1. A semiconductor optoelectronic element, comprising: Operating the substrate; The semiconductor epitaxial stack unit is arranged on the operation substrate, and the semiconductor epitaxial stack unit includes: a first semiconductor material layer having a first conductivity characteristic disposed on the handle substrate; and a second semiconductor material layer having a second conductivity characteristic disposed on the first semiconductor material layer; A transparent conductive layer disposed on the second semiconductor material layer, the transparent conductive layer comprising: a first surface having a direct contact portion in direct contact with the second layer of semiconductor material; a second surface, substantially parallel to the first surface, having a direct contact counterpart opposite to the direct contact portion; and The first electrode is arranged on the operation substrate and is electrically connected to the semiconductor epitaxial stack unit through the transparent conductive layer, wherein the first electrode and the transparent conductive layer pass through the direct contact portion and the direct contact corresponding portion The areas of the two are electrically connected to each other, and the first electrode is disposed in an area other than the direct contact portion and the direct contact corresponding portion. 2. The semiconductor optoelectronic device according to claim 1, wherein the semiconductor epitaxial stack unit further comprises a light emitting layer disposed between the first semiconductor material layer and the second semiconductor material layer. 3. The semiconductor optoelectronic device according to claim 1, further comprising a second electrode disposed between the operation substrate and the semiconductor epitaxial stack unit or on an opposite side of the operation substrate to the semiconductor epitaxial stack unit. 4. The semiconductor optoelectronic device as claimed in claim 1, wherein the light transmittance of the transparent conductive layer is greater than 90%. 5. The semiconductor optoelectronic device according to claim 1, wherein the semiconductor optoelectronic device is a solar cell or a light emitting diode. 6. The semiconductor photoelectric element as claimed in claim 1, wherein the transparent conductive layer material is selected from the group consisting of indium tin oxide, cadmium tin oxide, zinc oxide, indium oxide, tin oxide, copper aluminum oxide, copper gallium oxide, strontium oxide A group consisting of copper, aluminum zinc oxide, zinc gallium oxide, and any combination of the above materials. 7. The semiconductor optoelectronic device as claimed in claim 1, further comprising a plurality of metal wires extending from the first electrode to the directly contacting corresponding portion of the transparent conductive layer. 8. The semiconductor optoelectronic device as claimed in claim 7, wherein the metal wire has a width less than 20 μm, and/or the material of the plurality of metal wires is different from that of the first electrode. 9. The semiconductor optoelectronic device as claimed in claim 1, wherein the material of the first electrode is a single-layer or multi-layer metal structure composed of titanium, aluminum, gold, chromium, nickel, germanium or any alloy thereof. 10. The semiconductor optoelectronic device as claimed in claim 1, wherein the operating substrate further has a rough surface, and the rough surface comprises at least one protrusion and/or at least one concave hole.