CN102376722A - Sensing device and manufacturing method thereof - Google Patents
Sensing device and manufacturing method thereof Download PDFInfo
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- CN102376722A CN102376722A CN2010102558283A CN201010255828A CN102376722A CN 102376722 A CN102376722 A CN 102376722A CN 2010102558283 A CN2010102558283 A CN 2010102558283A CN 201010255828 A CN201010255828 A CN 201010255828A CN 102376722 A CN102376722 A CN 102376722A
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 37
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Abstract
The invention discloses a sensing device. The sensing device comprises a pixel sensing array and a memory unit, wherein the sensing pixel array is formed on a substrate and comprises a plurality of pixels for sensing light rays; the substrate has a first side and a second side opposite to the first side; the sensing pixel array receives the light rays through the first side and senses the light rays; and the memory unit is formed on the second side of the substrate to store data.
Description
Technical field
The present invention relates to a kind of sensing apparatus, particularly relate to a kind of sensing apparatus of back lighting, it comprises the memory cell that is configured in sensor pixel array front side.
Background technology
Existing image sensering device (cmos image sensor for example; CIS) comprise the key element of a plurality of raising imageing sensor usefulness; For instance, the chromatic colour filter, with light convert into the signal of telecommunication the sensor pixel array, receive the signal of telecommunication and be digital signal and then circuit or the like of processing digital signal electrical signal conversion.The CIS technology has and can above-mentioned all elements be incorporated in the advantage on single crystal grain or the chip.
Fig. 1 representes existing frontlighting (front-side illumination, the sectional view of cmos image sensor FSI).Consult Fig. 1, cmos image sensor 1 comprises the pel array 10 with a plurality of pixels 100, a plurality of metal levels 11, chromatic filter 12 and the lenticule (microlens) 13 that forms cmos circuit.Metal level 11 is formed on the pel array 10 with mutual connection.Chromatic filter 12 is formed on the metal level 11.Cmos image sensor 1 receives light 14 through lenticule 12, and the light that receives is sent to pel array 10 through chromatic filter 12 and metal level 11.Since the cmos image sensor of frontlighting 1 need a plurality of not by the light sensing zone that metal wire stopped of metal level 11 to obtain bigger aperture opening ratio, the metal wire that therefore connects interior pixels circuit and peripheral circuit receives serious constraint when formation.For the interconnective constraint of metal wire between pixel 100 and peripheral circuit, limited pixel-available maximum frequency range of periphery contact.Therefore, make that the parameter (for example greatest frame rate, dynamic range or the like) of cmos image sensor is undesirable.In addition, when the size decreases of pixel 100, the usefulness of pel array 10 reduces, comprise quantum efficiency (quantum efficiency, QE), the effect that interacts (cross-talk effect), and dark current or the like.
Therefore, develop the back lighting that cmos image sensor (back-side illumination, BSI).Fig. 2 representes the sectional view of the cmos image sensor of existing back lighting.Consult Fig. 2, cmos image sensor 20 comprises the pel array 20 with a plurality of pixels 200, a plurality of metal levels 21, chromatic filter 22 and the lenticule 23 that forms cmos circuit.Pel array 20 receives light 24 and can not pass through metal level 21 through chromatic filter 22 and lenticule 23.Because when light penetration chromatic filter 22 and lenticule 23, the usefulness of pel array 200 then can not receive the influence of light penetration metal level 21 and stopped.
Summary of the invention
The present invention provides a kind of sensing apparatus, and it comprises pixel sensing array and memory cell.The sensor pixel matrix-like is formed in substrate, and it comprises and is used for a plurality of pixels of light sensing.Substrate has first side and with respect to second side of first side, and the sensor pixel array is received light to carry out the light sensing through first side joint.Memory cell is formed at second side of substrate, with the storage storage data.
In certain embodiments, memory cell comprises the first metal layer, second metal level, a plurality of first metal wire and a plurality of second metal wire.First and second metal level is formed at second side of substrate.Memory cell is formed at the first metal layer and second metal level.A plurality of first metal wires are formed at the first metal layer.A plurality of second metal wires are formed at second metal level and staggered with first metal wire.First metal wire that each group is staggered and second metal wire form memory cell with the storage storage data.When data write to memory cell with the storage storage, first metal wire of corresponding this memory cell connected the second corresponding metal wire through a passage.
The present invention also provides a kind of manufacturing approach of sensing apparatus, may further comprise the steps: substrate is provided; And at substrate formation sensor pixel array.Substrate has first side and with respect to second side of first side, and the sensor pixel array is received light to carry out the light sensing through first side joint.The manufacturing approach of sensing apparatus also comprises: second side in substrate forms memory cell, in order to the storage storage data.
In certain embodiments, the step of formation memory cell comprises: second side in substrate forms the first metal layer and second metal level; Form a plurality of first metal wires at the first metal layer; And form a plurality of second metal wires at second metal level.A plurality of second metal wires and a plurality of first metal wire are staggered, and first metal wire and second metal wire that each group is operated form memory cell with the storage storage data.In addition, data write to this corresponding memory cell by through a passage first metal wire being connected the second corresponding metal wire.
Description of drawings
Fig. 1 representes the sectional view of the cmos image sensor of existing frontlighting;
Fig. 2 representes the sectional view of the cmos image sensor of existing back lighting;
Fig. 3 representes the sectional view according to the sensing apparatus of the embodiment of the invention;
The top view of sensing apparatus in Fig. 4 presentation graphs 3; And
Fig. 5 representes the flow chart of the manufacturing approach of sensing apparatus in the embodiment of the invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, hereinafter is special lifts preferred embodiment, and combines accompanying drawing, elaborates as follows.
Fig. 3 representes the sectional view according to the sensing apparatus of the embodiment of the invention.Consult Fig. 3, sensing apparatus 3 comprises pel array 30, a plurality of metal level 31, chromatic filter 32 and lenticule 33.Pel array 30 is formed at substrate 310, and comprises that a plurality of pixels 300, this pixel 300 are configured to a plurality of row and a plurality of row with light sensing.Substrate 310 has the first side 30a and with respect to the second side 30b of the first side 30a.In this embodiment, sensing apparatus 3 uses backside illumination technology.Therefore, lenticule 33 forms 30a, and chromatic filter 32 is formed between lenticule 33 and the sensor pixel array 30.In another embodiment, lenticule 33 can be formed between colored rate light device 32 and the sensor pixel array 30.Metal level 31 is formed at the second side 30b of substrate 310.So sensor pixel array 30 receives light 34 through the lenticule 33 at the first side 30a with chromatic filter 32.Therefore, light 34 31 of the metal wires that can not be positioned at the second side 30b stop.
In this embodiment, with four layers of metal level 31
1～31
4For example is explained.Yet the quantity of metal level is to decide according to the actual requirements.At four layers of metal level 31
1～31
4In, two metal levels are used for forming memory cell.For instance, as shown in Figure 3, metal level 31
1And 31
2Being used for forming memory cell 35 stores to carry out storage.In this embodiment, (read-only memory ROM) realizes memory cell 35 with read-only memory.Fig. 4 representes the top view of sensing apparatus 3.In order to clearly demonstrate, Fig. 4 only presents the sensor pixel array 30 among Fig. 3 and is formed at metal level 31
1And 31
2Memory cell 35.Consult Fig. 4, memory cell 35 comprises and is formed at metal level 31
1A plurality of first metal wire ML1
1～ML1
MAnd be formed at metal level 31
2A plurality of second metal wire ML2
1～ML2
N, wherein, M and N are positive integer.The first metal wire ML1
1～ML1
MWith the second metal wire ML2
1～ML2
NStaggered.Therefore, staggered first metal wire and second metal wire formation memory cell of each group stores to carry out storage.For instance, the first metal wire ML1 that interlocks
1With the second metal wire ML2
1Form memory cell 350
1
In certain embodiments, the first metal wire ML1
1～ML1
MBe formed at metal level 31
2, and the second metal wire ML2
1～ML2
NBe formed at metal level 31
1
Consult Fig. 4, sensing apparatus 3 also comprises reading circuit 37 and memorizer control circuit.Memorizer control circuit comprises column decoding 38, row decoding circuit 39 and decision circuitry 40.As stated, pixel 300 sensings of sensor pixel array 30 are through the light 34 of lenticule 33 with chromatic filter 32.Therefore a plurality of pixels 300 produce detection signal DS respectively according to the light 34 that senses.37 of reading circuits are used for reading the detection signal DS that is produced by selecteed at least one pixel.
In this embodiment, memory cell 35 is that ROM is with the storage data.When data to write to memory cell when storing, at metal level 31
1On correspondence first metal wire be connected at metal level 31 through a passage
2On correspondence second metal wire.For instance, when data to write to memory cell 350
2During with storage, at metal level 31
1On the first metal wire ML1
1Through passage V1
4Be connected at metal level 31
2On the second metal wire ML2
4Memory cell its at metal level 31
1On correspondence first metal wire be not connected metal level 31 through passage
2On correspondence second metal wire, then this memory cell can not stored data.
Suppose that column decoding 38 is according to address signal AS
ROWSelect the first metal wire ML1
1To detect the first metal wire ML1
1Voltage level, and row decoding circuit 39 is according to address signal AS
COLUMNSelect the second metal wire ML2
1To detect the second metal wire ML2
1Voltage level.Because the first metal wire ML1
1Do not connect the second metal wire ML2 through passage
1Writing data, so decision circuitry 40 is judged the first metal wire ML1
1Voltage level be not equal to the second metal wire ML2
1Voltage level.So decision circuitry 40 judgment data do not write to memory cell 350
1And produce corresponding numerical value, for example the logic high standard is worth " 0 ".
According to the sensing apparatus 3 of embodiment, sensor pixel array 30 receives light 24 with light sensing 24 through the first side 30a of substrate 310, and is formed at metal level 31
1With 31
2 Memory cell 35 be configured in the second side 30b with respect to the first side 30a.Therefore, light 24 can be by metal level 31
1The first metal wire ML1
1～ML1
MWith metal level 31
2The second metal wire ML2
1～ML2
NInstitute stops.In addition, the memory cell 24 that further is provided with can be used to store storage data, and can not reduce sensing apparatus 3 quantum efficiency (quantum efficiency, QE), the effect that interacts (cross-talk effect), and dark current or the like.
Fig. 5 representes the flow chart of the manufacturing approach of sensing apparatus in the embodiment of the invention.Hereinafter, manufacturing approach will be consulted Fig. 3～5 and explained.In Fig. 5, substrate 310 (step S50) is provided, and sensor pixel array 30 is formed at substrate 310 (step S51).Sensor pixel array 30 comprises a plurality of pixels 300 that are configured to a plurality of row and a plurality of row.Metal level 31
1With 31
2Be formed at the second side 30b (step S52) of substrate 310.Then, the first metal wire ML1
1～ML1
MBe formed at metal level 31
1(step S53), and the second metal wire ML2
1～ML2
NBe formed at metal level 31
2(step S54).The first metal wire ML1
1～ML1
MWith the second metal wire ML2
1～ML2
NStaggered, and one group of first staggered metal wire and second metal wire form the memory cell of memory cell 35, in order to store storage data.By with metal level 31
1First metal wire be connected to metal level 31 through passage
2Second metal wire, can data be write to corresponding memory cell to store.Column decoder 38 configurations come according to address signal AS
ROWSelect the first metal wire ML1
1～ML1
MOne of in, to detect the voltage level of selecteed first metal wire.Row decoder 39 configurations come according to address signal AS
COLUMNSelect the second metal wire ML2
1～ML2
NOne of in, to detect the voltage level of selecteed second metal wire.Decision circuitry 40 configurations judge whether the voltage level of selecteed first metal wire equals the voltage level of selecteed second metal wire.The voltage level of judging selecteed first metal wire when decision circuitry 40 equals the voltage level of selecteed second metal wire, and 40 judgment data of decision circuitry have write to corresponding stored born of the same parents 350
2And produce corresponding numerical value, for example the accurate value of logic high " 1 ".The voltage level of judging selecteed first metal wire when decision circuitry 40 is not equal to the voltage level of selecteed second metal wire, and 40 judgment data of decision circuitry do not write to the corresponding stored born of the same parents and produce corresponding numerical value, for example the accurate value of logic high " 0 ".Then, the first side 30a of cutter mill substrate 310 is to reduce the thickness (step S55) of substrate 310.Lenticule 33 and chromatic filter 32 are formed at the first side 30a (step S56) of substrate 310.Therefore, sensor pixel array 30 receives light through lenticule 33 and chromatic filter 32.
In step S56, chromatic filter 32 is formed between lenticule 33 and the substrate 310.In another embodiment, lenticule 33 can be formed between chromatic filter 32 and the substrate 310.
Though the present invention discloses as above with preferred embodiment; So it is not in order to limit scope of the present invention; Any those skilled in the art; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the accompanying Claim person of defining.
Claims (12)
1. sensing apparatus comprises:
The sensor pixel array is formed at substrate, comprises being used for a plurality of pixels of light sensing, and wherein, said substrate has first side and with respect to second side of said first side, and said sensor pixel array is received light to carry out the light sensing through said first side joint; And
Memory cell is formed at said second side of said substrate, with the storage storage data.
2. sensing apparatus as claimed in claim 1, wherein, said memory cell comprises:
The first metal layer is formed at said second side of said substrate;
Second metal level is formed at said second side of said substrate, and wherein, said memory cell is formed at said the first metal layer and said second metal level;
A plurality of first metal wires are formed at said the first metal layer; And
A plurality of second metal wires are formed at said second metal level and staggered with said first metal wire;
Wherein, staggered said first metal wire and said second metal wire of each group forms memory cell with the storage storage data.
3. sensing apparatus as claimed in claim 2, wherein, when data write to said memory cell with the storage storage, said first metal wire of corresponding said memory cell connected corresponding said second metal wire through passage.
4. sensing apparatus as claimed in claim 2 also comprises:
First decoding circuit is in order to receive first address signal and one of to select in said first metal wire according to said first address signal is each, to detect the voltage level of selecteed said first metal wire;
Second decoding circuit is in order to receive second address signal and one of to select in said second metal wire according to said second address signal, to detect the voltage level of selecteed said second metal wire; And
Whether decision circuitry equals the voltage level of selecteed said second metal wire in order to the voltage level that detects selecteed said first metal wire;
Wherein, the voltage level of judging selecteed said first metal wire when said decision circuitry equals the voltage level of selecteed said second metal wire, and said decision circuitry judgment data is to write to corresponding said memory cell.
5. sensing apparatus as claimed in claim 1, wherein, said pixel arrangement becomes a plurality of row and a plurality of row, and said sensing apparatus also comprises:
Reading circuit, in order to read detection signal, wherein, said detection signal is produced by the light of at least one said pixel according to sensing.
6. sensing apparatus as claimed in claim 1, wherein, said sensing apparatus uses backside illumination technology.
7. sensing apparatus as claimed in claim 1 also comprises:
Lenticule and chromatic filter are disposed at said first side of said substrate;
Wherein, said sensor pixel array receives light through said lenticule and said chromatic filter.
8. the manufacturing approach of a sensing apparatus comprises:
Substrate is provided;
Form the sensor pixel array in said substrate, wherein, said substrate has first side and with respect to second side of said first side, and said sensor pixel array is received light to carry out the light sensing through said first side joint; And
Said second side in said substrate forms memory cell, in order to the storage storage data.
9. the manufacturing approach of sensing apparatus as claimed in claim 8, wherein, the step that forms said memory cell comprises:
Said second side in said substrate forms the first metal layer and second metal level;
Form a plurality of first metal wires in said the first metal layer; And
Form a plurality of second metal wires in said second metal level;
Wherein, said second metal wire and said first metal wire are staggered, and said first metal wire and said second metal wire that each group is operated form memory cell with the storage storage data.
10. the manufacturing approach of sensing apparatus as claimed in claim 9, wherein, data write to corresponding said memory cell by through passage said first metal wire being connected corresponding said second metal wire.
11. the manufacturing approach of sensing apparatus as claimed in claim 8, wherein, said sensing apparatus uses backside illumination technology.
12. the manufacturing approach of sensing apparatus as claimed in claim 8 also comprises:
Said first side of the said substrate of cutter mill; And
Said first side in said substrate forms lenticule and chromatic filter;
Wherein, said sensor pixel array receives light through said lenticule and said chromatic filter.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102558283A CN102376722A (en) | 2010-08-16 | 2010-08-16 | Sensing device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102558283A CN102376722A (en) | 2010-08-16 | 2010-08-16 | Sensing device and manufacturing method thereof |
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| CN102376722A true CN102376722A (en) | 2012-03-14 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1421871A (en) * | 2001-11-22 | 2003-06-04 | 富士通株式会社 | Storage circuit with odd-even check unit array |
| US20060022962A1 (en) * | 2002-11-15 | 2006-02-02 | Gerald Morrison | Size/scale and orientation determination of a pointer in a camera-based touch system |
| WO2006129762A1 (en) * | 2005-06-02 | 2006-12-07 | Sony Corporation | Semiconductor image sensor module and method for manufacturing same |
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2010
- 2010-08-16 CN CN2010102558283A patent/CN102376722A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1421871A (en) * | 2001-11-22 | 2003-06-04 | 富士通株式会社 | Storage circuit with odd-even check unit array |
| US20060022962A1 (en) * | 2002-11-15 | 2006-02-02 | Gerald Morrison | Size/scale and orientation determination of a pointer in a camera-based touch system |
| WO2006129762A1 (en) * | 2005-06-02 | 2006-12-07 | Sony Corporation | Semiconductor image sensor module and method for manufacturing same |
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Application publication date: 20120314 |