CN102361038A - Novel main gate electrode of crystalline silicon solar battery - Google Patents
Novel main gate electrode of crystalline silicon solar battery Download PDFInfo
- Publication number
- CN102361038A CN102361038A CN2011103066666A CN201110306666A CN102361038A CN 102361038 A CN102361038 A CN 102361038A CN 2011103066666 A CN2011103066666 A CN 2011103066666A CN 201110306666 A CN201110306666 A CN 201110306666A CN 102361038 A CN102361038 A CN 102361038A
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- Prior art keywords
- silicon solar
- main grid
- electrode
- crystalline silicon
- solar battery
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000002002 slurry Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 7
- 238000003466 welding Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- Photovoltaic Devices (AREA)
Abstract
The invention relates to a novel main gate electrode of a crystalline silicon solar battery. A hollow-out conductive paste layer is formed on an electrode; the hollow-out conductive paste layer comprises H-shaped contact strips which are located in the middle of edge frames at both sides of a main gate electrode and the main gate electrode and uniformly arranged equidistantly; and the H-shaped contact strips are connected with the edge frames integrally. The novel main gate electrode of the crystalline silicon solar battery can be used for avoiding an electrode structure of a tin wire which is generated when a crystalline silicon solar battery sheet is welded, and saving the consumption amount of conductive silver paste when the electrode of the crystalline silicon solar battery is printed, and therefore the purposes of reducing the cost and improving the efficiency are achieved.
Description
Technical field
The present invention relates to the novel main grid electrode of a kind of crystal-silicon solar cell, the novel main grid electrode of particularly a kind of crystal-silicon solar cell (bus-bar) engraved structure.
Background technology
Crystal-silicon solar cell is a kind of semiconductor device that can effectively absorb solar radiation and make it to be converted into electric energy, can be applicable to various electricity generation systems.The main drive that the crystal-silicon solar cell generation technology is applied both ways, high conversion efficiency and low cost.Except silicon chip, the optimized application of conductive silver paste is to realize the emphasis of this two aspects target simultaneously.
The main grid effect of crystal silicon solar energy battery is to collect and conduct charges.In order to reduce the power loss that electrode resistance causes, ensure the solderability of electrode main grid, improve the conversion efficiency of crystal silicon solar energy battery, the electrocondution slurry that crystalline silicon solar battery electrode uses noble metal silver to process usually prepares.Conventional crystalline silicon solar battery electrode main grid is generally by the conductive silver paste complete filling; This has not only increased huge silver slurry unit consumption cost; And in welding process, cause the tin overflow easily, and produce the tin silk, " drawing the tin phenomenon " not only causes bad order; Cause rework rate, fragment rate and scrappage to rise, further raise cost.Therefore, designing a kind of main grid electrode structure, improve the welding yields, guarantee that charge-trapping and transmission are not affected, is a kind of effective way of cost efficiency.
Summary of the invention
The purpose of this invention is to provide the novel main grid electrode of a kind of crystal-silicon solar cell; Can avoid crystal silicon solar cell sheet when welding, to produce the electrode structure of tin silk; Can practice thrift the consumption of crystalline silicon solar battery electrode printing conductive silver slurry, thereby reach the purpose of cost efficiency.
The technical scheme that the present invention takes is:
The novel main grid electrode of a kind of crystal-silicon solar cell; Electrode is provided with the hollow out formula conductive paste bed of material; The hollow out formula conductive paste bed of material comprises middle equidistant evenly distributed " worker " font bow strip of frame, main grid electrode that is positioned at main grid electrode both sides, and " worker " font bow strip and frame are connected as a single entity.
There are the electrocondution slurry lines to connect between described adjacent two " worker " font bow strips.
Described electrocondution slurry lines preferably have the 1-3 bar, between frame, form the figure that contains 2-4 rectangle hollow out.
" worker " of main grid electrode of the present invention but the font bow strip can provide certain bonding area; Ensure the adhesive strength and the welding reliability of welding; Solid line wherein connects frame can effectively reduce main grid electrode body resistance, can guarantee the continuity of employee's welding operation simultaneously.There is the rectangle pierced pattern between adjacent two " worker " font bow strips, can effectively reduces the consumption of conductive silver paste; The rectangle hollow out can store the scolding tin that overflows when welding, can avoid the appearance of tin silk, improves the yields of welding; Rectangular hollow out can also reduce the contact area of conductive silver paste and silicon chip surface, thereby it is compound to reduce charge carrier, improves open circuit voltage and short circuit current.Adopt the crystal silicon solar energy battery main grid structure of aforesaid way preparation, can not only reduce crystalline silicon too can production cost of cells, but also can improve the yields of battery component, reduces the production cost of assembly.
The battery electrical property correction data such as the following table 1 of the present invention and the complete non-hollow out main grid of grid formula electrode:
Table 1
Description of drawings
Fig. 1 is the structure chart of the embodiment of the invention 1;
Fig. 2 is the structure chart of the embodiment of the invention 2;
Fig. 3 is the structural representation of the embodiment of the invention 3;
Wherein: 1 frame, 2 secondary grid, 3 " worker " font bow strip, 4 rectangle hollow out figures.
Embodiment
The novel main grid electrode of a kind of crystal-silicon solar cell; Electrode is provided with the hollow out formula conductive paste bed of material; The hollow out formula conductive paste bed of material comprises middle equidistant evenly distributed " worker " font bow strip 3 of frame 1, main grid electrode that is positioned at main grid electrode both sides, and " worker " font contact point bar 3 is connected as a single entity with frame 1.
Crystal silicon battery electrode main grid two ends are by the solid border 1 of electrocondution slurry complete filling, and the electrode main grid links to each other with secondary grid 2 through the frame solid line, and electrode main grid mid portion is filled for the electrocondution slurry selectivity.
Between adjacent two " worker " font bow strips of crystal-silicon solar cell main grid electrode is hollow out, and no electrocondution slurry lines connect.
There are the electrocondution slurry lines to connect between adjacent two " worker " font bow strips of crystal-silicon solar cell main grid electrode.
Described electrocondution slurry lines have 1, between frame, form the figure that contains 2 rectangle hollow outs.
There are the electrocondution slurry lines to connect between adjacent two " worker " font bow strips of crystal-silicon solar cell main grid electrode.
Described electrocondution slurry lines have 3, between frame, form the figure that contains 4 rectangle hollow outs.
Claims (3)
1. novel main grid electrode of crystal-silicon solar cell; It is characterized in that; Electrode is provided with the hollow out formula conductive paste bed of material; The hollow out formula conductive paste bed of material comprises middle equidistant evenly distributed " worker " font bow strip of frame, main grid electrode that is positioned at main grid electrode both sides, and " worker " font bow strip and frame are connected as a single entity.
2. crystal-silicon solar cell main grid electrode according to claim 1 is characterized in that, has the electrocondution slurry lines to connect between described adjacent two " worker " font bow strips.
3. crystal-silicon solar cell main grid electrode according to claim 2 is characterized in that described electrocondution slurry lines preferably have the 1-3 bar, between frame, forms the figure that contains 2-4 rectangle hollow out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103066666A CN102361038A (en) | 2011-10-11 | 2011-10-11 | Novel main gate electrode of crystalline silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103066666A CN102361038A (en) | 2011-10-11 | 2011-10-11 | Novel main gate electrode of crystalline silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102361038A true CN102361038A (en) | 2012-02-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103066666A Pending CN102361038A (en) | 2011-10-11 | 2011-10-11 | Novel main gate electrode of crystalline silicon solar battery |
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| Country | Link |
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| CN (1) | CN102361038A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340547A (en) * | 2016-08-31 | 2017-01-18 | 浙江尚越新能源开发有限公司 | Welding structure and method for reducing cost of photovoltaic cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05267705A (en) * | 1991-10-04 | 1993-10-15 | Telefunken Syst Technik Ag | Thin solar cell and manufacturing method |
| CN1472775A (en) * | 2002-07-29 | 2004-02-04 | 联华电子股份有限公司 | Method for correcting terminal contraction effect of linear thin film layer |
| WO2011021655A1 (en) * | 2009-08-19 | 2011-02-24 | 三洋電機株式会社 | Solar battery, solar battery module and solar battery system |
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| CN202231020U (en) * | 2011-10-11 | 2012-05-23 | 润峰电力有限公司 | Novel main grid electrode of crystalline silicon solar cell |
-
2011
- 2011-10-11 CN CN2011103066666A patent/CN102361038A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05267705A (en) * | 1991-10-04 | 1993-10-15 | Telefunken Syst Technik Ag | Thin solar cell and manufacturing method |
| CN1472775A (en) * | 2002-07-29 | 2004-02-04 | 联华电子股份有限公司 | Method for correcting terminal contraction effect of linear thin film layer |
| WO2011021655A1 (en) * | 2009-08-19 | 2011-02-24 | 三洋電機株式会社 | Solar battery, solar battery module and solar battery system |
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| CN202231020U (en) * | 2011-10-11 | 2012-05-23 | 润峰电力有限公司 | Novel main grid electrode of crystalline silicon solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340547A (en) * | 2016-08-31 | 2017-01-18 | 浙江尚越新能源开发有限公司 | Welding structure and method for reducing cost of photovoltaic cell |
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Application publication date: 20120222 |