CN102358951A - Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches - Google Patents
Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches Download PDFInfo
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- CN102358951A CN102358951A CN2011103065273A CN201110306527A CN102358951A CN 102358951 A CN102358951 A CN 102358951A CN 2011103065273 A CN2011103065273 A CN 2011103065273A CN 201110306527 A CN201110306527 A CN 201110306527A CN 102358951 A CN102358951 A CN 102358951A
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Abstract
The invention relates to a thermal system and a technology for producing a float zone doped single crystal silicon having a size phi of 6 inches. The thermal system comprises a coil and a heat preservation cylinder. An upper surface of the coil has an inclined multi-stepped coil structure. An external diameter phi of the coil is in a range of 350+50/-50 millimeters. An internal diameter phi of the coil is in a range of 50+2/-2 millimeters. The thickness of the coil is in a range of 30+2/-2 millimeters. A diameter phi of the heat preservation cylinder is in a range of 350+50/-50 millimeters. The height of the heat preservation cylinder is in a range of 100+20/-20 millimeters. A distance between the coil and the heat preservation cylinder is in a range of 100+50/-50 millimeters. The technology is characterized in that impurity gas is fed into a furnace chamber in shoulder extension, wherein a lower shaft rotating speed is in a range of 7 to 10 revolutions per minute and a shoulder extension angle is in a range of 40+2/-2 degrees; and in equal-diameter growth, a lower shaft has a falling speed of 3 to 4 millimeters per minute and a rotating speed of 3 to 5 revolutions per minute and coil pulser power is 60 to 70% of rated power. Through the thermal system which is a novel thermal system and adjustment on technological parameters, the float zone doped single crystal silicon having a size phi of 6 inches can be successfully prepared by drawing, and dislocation and burr generation problems produced easily in production of a float zone doped single crystal silicon with a large size are solved, and thus market demands on single crystal silicon with a large size are satisfied.
Description
Technical field
The present invention relates to the working method of silicon single-crystal, hot system and technology that the molten gas in 6 inches districts of particularly a kind of Φ of production is mixed silicon single-crystal.
Background technology
Semiconducter device producer all progressively requires to increase the diameter of silicon chip from the consideration of boosting productivity, reduce cost, increase aspects such as profit, and ever-larger diameters is the eternal problem of semiconducter device industry and materials industry.But in the production process of zone-melted silicon single crystal, along with the increase of single crystal diameter, its Cheng Jing is more and more difficult also.
Draw the molten diameter monocrystalline in district, because the heat radiation of monocrystalline center is slower, the edge heat radiation is very fast, so the monocrystalline solid-liquid interface is recessed bowl-shape.The monocrystalline edge solidifies prior to the center, and volumetric expansion when solidify the center can be produced internal stress.In case stress, then can produce the disconnected bud of dislocation greater than the elastic limit of silicon single-crystal.Problem is particularly outstanding when drawing large diameter silicon monocrystal, because diameter is bigger, the inside and outside radiating rate difference of monocrystalline is bigger, and the stress that produces during the solidification and crystallization of center is also bigger, more is easy to generate the disconnected bud of dislocation.Monocrystalline in case run into impurity particle, is easy to produce new nucleus and becomes polycrystalline in process of growth.Monocrystalline is mixed, be, increase the risk of resolving bud to the inner impurity atoms of introducing of single-crystal lattice.To successfully draw the major diameter doped single crystal, thermal field has been proposed requirements at the higher level.
The overall dimension of the zone-melted silicon single crystal under the prior art is 6 inches of 5 inches of Φ or Φ.
Summary of the invention
The hot system and the technology that the object of the present invention is to provide the molten gas in 6 inches districts of a kind of Φ of production to mix silicon single-crystal.
For reaching above purpose, need adjust to hot system, make monocrystalline inside and outside solidify more synchronous, to reduce the probability that stress causes disconnected bud.
The height that increases heat-preservation cylinder is to the 100mm, and increasing diameter adds to 350 ± 50mm, with coil-span from being reduced to 100 ± 50mm; Strengthened its heat insulation effect; Can slow down the outside rate of cooling of monocrystalline, thereby make the inside and outside solidification and crystallization of monocrystalline comparatively synchronous, reduce the thermal stresses that produces.
In the isometrical process, reduce lower shaft rotating speed to 3 ~ 5rpm; Expand in the shoulder process, reduce lower shaft rotating speed to 7 ~ 10rpm.The both can reduce the relative movement of monocrystalline and surrounding atmosphere, also can slow down the outside rate of cooling of monocrystalline, thereby makes the inside and outside solidification and crystallization of monocrystalline comparatively synchronous, reduces the thermal stresses that produces.
Expand and select when takeing on slowly to expand shoulder, making expansion fillet degree is 40 ° ± 2 °, also can make monocrystalline the solidification and crystallization inner and edge comparatively synchronous, reduces the probability that thermal stresses produces.
Because the monocrystalline rate of cooling has reduced, so the releasability of silicon single-crystal latent heat of phase change has also been reduced, need suitably to reduce the lowering speed of lower shaft, through test of many times, it is comparatively suitable that lowering speed is reduced to 3 ~ 4mm/min.
The single crystal diameter size increases, the also corresponding increase of silicon melt supply that the unit time needs, and the power that need increase the coil producer so is to melt more polysilicon.Through test, the coil generator power can satisfy the requirement of production for 60% ~ 70% of its rated output.
Selecting external diameter is Φ 350 ± 50mm, and internal diameter is Φ 50 ± 2mm, and thickness is 30 ± 2mm, and upper surface is that upper surface is many steps coil that tilts, and then can make electromagnetic field distribution and more even to the heating of polycrystalline charge bar, prevents " going out thorn " problem.
The technical scheme that the present invention taked is: the hot system that the molten gas in 6 inches districts of a kind of Φ of production is mixed silicon single-crystal; Comprise coil and heat-preservation cylinder, it is characterized in that: said coil upper surface is many steps coil that tilts, and coil outer diameter is Φ 350 ± 50mm; Internal diameter is Φ 50 ± 2mm, and thickness is 30 ± 2mm.
Said heat-preservation cylinder diameter is Φ 350 ± 50mm, highly is 100 ± 20mm.
The distance of said coil and heat-preservation cylinder is 100 ± 50mm.
The technology that the molten gas in 6 inches districts of a kind of Φ of production is mixed silicon single-crystal, it is characterized in that: in expanding the shoulder process, in furnace chamber, feed impurity gas, the lower shaft rotating speed is 7～10rpm, expanding the fillet degree is 40 ° ± 2 °; In the isodiametric growth process, the lower shaft lowering speed is about 3～4mm/min, and the lower shaft rotating speed is 3～5rpm, and the coil generator power is 60%～70% of its rated output.
The beneficial effect that the present invention produced is: through adopting newly-designed hot system and having adjusted processing parameter; Can successfully draw out the molten gas in 6 inches districts of Φ and mix silicon single-crystal; Solved large diameter zone melting gas and mixed silicon single-crystal and be easy to generate the disconnected bud of dislocation and " going out thorn " problem, thereby satisfied the demand of market large diameter silicon monocrystal in production process.
Description of drawings
Fig. 1 mixes the hot system architecture synoptic diagram of silicon single-crystal for producing the molten gas in 6 inches districts of Φ.
Embodiment
Below in conjunction with embodiment and accompanying drawing the present invention is described further.With reference to Fig. 1, the hot system that the molten gas in 6 inches districts of a kind of Φ of production is mixed silicon single-crystal comprises coil 1 and heat-preservation cylinder 2, and coil 1 upper surface is many steps coil that tilts, and coil 1 external diameter is Φ 300mm, and internal diameter is Φ 50mm, and thickness is 30mm.Heat-preservation cylinder 2 diameters are Φ 300mm, highly are 100mm.Coil 1 is 100mm with the distance of heat-preservation cylinder 2.The water coolant water route 3 of coil 1 and the water coolant water route 4 of heat-preservation cylinder 2 lay respectively at the two inside.
The equipment that the molten gas in 6 inches districts of production Φ is mixed the silicon single-crystal employing is PVA FZ-30 type, and its technology concrete steps are following:
One, at first with oven door opening, with fibrous paper with the fire door inwall, go up furnace chamber, go up part wipings such as axle, coil and heat-preservation cylinder one time; Chuck is installed in the polycrystal head, and screws up with a wrench, afterwards chuck is installed in the axle low side, adjust polycrystalline charge bar 5 afterwards, make it to be vertical state; Coil 1 and heat-preservation cylinder 2 are installed then, and are carried out horizontal adjustment with water level gauge.Carry out the centering of coil afterwards with special centering instrument.Afterwards graphite annulus is stretched out, decline polycrystalline charge bar makes it to be positioned at the about 3mm in graphite annulus top.
Two, being evacuated to furnace pressure is 0.1bar, charges into Ar gas afterwards and makes furnace pressure reach 4bar, slowly increases power afterwards and carries out preheating, and be 30 minutes warm up time.Upwards rise monocrystalline 6 about 5mm afterwards, regain graphite annulus, decline polycrystalline charge bar heats.
Three, drawing-down neck: thin neck diameter of phi 2～3mm, length is 150mm.
Four, expand shoulder: in expanding the shoulder process, in stove, feed impurity gas, the lower shaft rotating speed is 7～10rpm, and expanding the fillet degree is 42 °.
Five, isodiametric growth: in the isodiametric growth process, the lower shaft lowering speed is 3.5mm/min, and the lower shaft rotating speed is 5rpm, and the coil generator power is 60%～70% of its rated output.
Six, ending: ending length is >=150mm.
Claims (4)
1. produce the hot system that the molten gas in 6 inches districts of Φ is mixed silicon single-crystal for one kind; Comprise coil (1) and heat-preservation cylinder (2), it is characterized in that: said coil (1) upper surface is many steps coil that tilts, and coil (1) external diameter is Φ 350 ± 50mm; Internal diameter is Φ 50 ± 2mm, and thickness is 30 ± 2mm.
2. the hot system that the molten gas in 6 inches districts of a kind of Φ according to claim 1 is mixed silicon single-crystal, it is characterized in that: said heat-preservation cylinder (2) diameter is Φ 350 ± 50mm, highly is 100 ± 20mm.
3. the hot system that the molten gas in 6 inches districts of a kind of Φ according to claim 1 is mixed silicon single-crystal, it is characterized in that: said coil (1) is 100 ± 50mm with the distance of heat-preservation cylinder (2).
4. produce the technology that the molten gas in 6 inches districts of Φ is mixed silicon single-crystal for one kind, it is characterized in that: in expanding the shoulder process, feed impurity gas to burner hearth, the lower shaft rotating speed is 7～10rpm, and expanding the fillet degree is 40 ° ± 2 °; In the isodiametric growth process, the lower shaft lowering speed is 3～4mm/min, and the lower shaft rotating speed is 3～5rpm, and the coil generator power is 60%～70% of its rated output.
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| CN201110306527.3A CN102358951B (en) | 2011-10-11 | 2011-10-11 | Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches |
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| CN201110306527.3A CN102358951B (en) | 2011-10-11 | 2011-10-11 | Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches |
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| CN102534754A (en) * | 2012-02-29 | 2012-07-04 | 浙江晶盛机电股份有限公司 | Reflection ring lifting device for improving thermal field of zone-melting single-crystal furnace |
| CN102586859A (en) * | 2012-03-10 | 2012-07-18 | 天津市环欧半导体材料技术有限公司 | Method for improving radial resistivity uniformity of float-zone silicon monocrystal |
| CN102808216A (en) * | 2012-08-22 | 2012-12-05 | 北京京运通科技股份有限公司 | Float-zone monocrystalline silicon production process and float-zone thermal field |
| CN103451727A (en) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | Zone melting furnace polycrystalline rod heat preservation device and heat preservation method thereof |
| CN103820847A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Temperature gradient control device for growing large-sized silicon single crystal with zone-melting method and method thereof |
| CN103966658A (en) * | 2013-02-01 | 2014-08-06 | 刘剑 | Double water circuit cooling zone melting induction coil |
| CN103993352A (en) * | 2014-04-18 | 2014-08-20 | 洛阳金诺机械工程有限公司 | Silicon core pulling method for rotating seed crystals |
| WO2014172929A1 (en) * | 2013-04-25 | 2014-10-30 | 浙江晶盛机电股份有限公司 | Auxiliary heating device for float zone furnace and heat preservation method for single crystal rod thereof |
| CN105154966A (en) * | 2015-10-19 | 2015-12-16 | 天津市环欧半导体材料技术有限公司 | Novel heat-insulating cylinder for improving crystallization of zone-melting silicon single crystals |
| CN105177699A (en) * | 2015-10-19 | 2015-12-23 | 天津市环欧半导体材料技术有限公司 | Refection ring for improving uniformity of axial and radial resistivities of float zone silicon single crystal |
| CN106702474A (en) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | Technology for eliminating polycrystalline thorns in FZ silicon growth |
| CN106702473A (en) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | Technology for preventing polycrystalline thorns in growth of floating zone silicon monocrystals |
| US9797062B2 (en) | 2013-04-25 | 2017-10-24 | Zhejiang Jingsheng M & E Co., Ltd | Zone melting furnace thermal field with dual power heating function and heat preservation method |
| CN112334605A (en) * | 2018-06-25 | 2021-02-05 | 硅电子股份公司 | Method for producing a single crystal of semiconductor material, device for carrying out said method and silicon semiconductor wafer |
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| CN102534754B (en) * | 2012-02-29 | 2014-11-12 | 浙江晶盛机电股份有限公司 | Reflection ring lifting device for improving thermal field of zone-melting single-crystal furnace |
| CN102534754A (en) * | 2012-02-29 | 2012-07-04 | 浙江晶盛机电股份有限公司 | Reflection ring lifting device for improving thermal field of zone-melting single-crystal furnace |
| CN102586859A (en) * | 2012-03-10 | 2012-07-18 | 天津市环欧半导体材料技术有限公司 | Method for improving radial resistivity uniformity of float-zone silicon monocrystal |
| CN102808216A (en) * | 2012-08-22 | 2012-12-05 | 北京京运通科技股份有限公司 | Float-zone monocrystalline silicon production process and float-zone thermal field |
| CN103820847A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Temperature gradient control device for growing large-sized silicon single crystal with zone-melting method and method thereof |
| CN103820847B (en) * | 2012-11-16 | 2016-06-15 | 有研半导体材料有限公司 | A kind of zone-melting process growing large-size silicon single crystal thermograde controls device and method |
| CN103966658A (en) * | 2013-02-01 | 2014-08-06 | 刘剑 | Double water circuit cooling zone melting induction coil |
| US9797062B2 (en) | 2013-04-25 | 2017-10-24 | Zhejiang Jingsheng M & E Co., Ltd | Zone melting furnace thermal field with dual power heating function and heat preservation method |
| WO2014172929A1 (en) * | 2013-04-25 | 2014-10-30 | 浙江晶盛机电股份有限公司 | Auxiliary heating device for float zone furnace and heat preservation method for single crystal rod thereof |
| US10138573B2 (en) | 2013-04-25 | 2018-11-27 | Zhejiang Jingsheng M & E Co., Ltd | Auxiliary heating device for zone melting furnace and heat preservation method for single crystal rod thereof |
| CN103451727B (en) * | 2013-08-19 | 2016-10-12 | 浙江晶盛机电股份有限公司 | Zone melting furnace polycrystalline rod attemperator and heat preserving method thereof |
| CN103451727A (en) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | Zone melting furnace polycrystalline rod heat preservation device and heat preservation method thereof |
| CN103993352A (en) * | 2014-04-18 | 2014-08-20 | 洛阳金诺机械工程有限公司 | Silicon core pulling method for rotating seed crystals |
| CN106702474A (en) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | Technology for eliminating polycrystalline thorns in FZ silicon growth |
| CN106702473A (en) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | Technology for preventing polycrystalline thorns in growth of floating zone silicon monocrystals |
| CN106702474B (en) * | 2015-07-20 | 2019-04-12 | 有研半导体材料有限公司 | The technique of polycrystalline thorn is eliminated in a kind of growth of zone-melted silicon single crystal |
| CN106702473B (en) * | 2015-07-20 | 2019-05-21 | 有研半导体材料有限公司 | Prevention polycrystalline goes out the technique pierced in a kind of growth of zone-melted silicon single crystal |
| CN105154966A (en) * | 2015-10-19 | 2015-12-16 | 天津市环欧半导体材料技术有限公司 | Novel heat-insulating cylinder for improving crystallization of zone-melting silicon single crystals |
| CN105177699A (en) * | 2015-10-19 | 2015-12-23 | 天津市环欧半导体材料技术有限公司 | Refection ring for improving uniformity of axial and radial resistivities of float zone silicon single crystal |
| CN112334605A (en) * | 2018-06-25 | 2021-02-05 | 硅电子股份公司 | Method for producing a single crystal of semiconductor material, device for carrying out said method and silicon semiconductor wafer |
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