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CN102356438B - 使用u形芯件形成的磁器件以及运用该器件的功率转换器 - Google Patents

使用u形芯件形成的磁器件以及运用该器件的功率转换器 Download PDF

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CN102356438B
CN102356438B CN201080012450.2A CN201080012450A CN102356438B CN 102356438 B CN102356438 B CN 102356438B CN 201080012450 A CN201080012450 A CN 201080012450A CN 102356438 B CN102356438 B CN 102356438B
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CN102356438A (zh
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S·钱德拉塞卡兰
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/10—Composite arrangements of magnetic circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F30/00—Fixed transformers not covered by group H01F19/00
    • H01F30/06—Fixed transformers not covered by group H01F19/00 characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F37/00—Fixed inductances not covered by group H01F17/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F38/00—Adaptations of transformers or inductances for specific applications or functions
    • H01F38/02—Adaptations of transformers or inductances for specific applications or functions for non-linear operation
    • H01F38/023—Adaptations of transformers or inductances for specific applications or functions for non-linear operation of inductances
    • H01F2038/026—Adaptations of transformers or inductances for specific applications or functions for non-linear operation of inductances non-linear inductive arrangements for converters, e.g. with additional windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/24—Magnetic cores
    • H01F27/26—Fastening parts of the core together; Fastening or mounting the core on casing or support
    • H01F27/263—Fastening parts of the core together
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/10—Composite arrangements of magnetic circuits
    • H01F3/12—Magnetic shunt paths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/10—Composite arrangements of magnetic circuits
    • H01F3/14—Constrictions; Gaps, e.g. air-gaps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1582—Buck-boost converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1584—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
    • H02M3/1586—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel switched with a phase shift, i.e. interleaved
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor

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  • Manufacturing & Machinery (AREA)
  • Dc-Dc Converters (AREA)

Abstract

一种使用U形芯件形成的、在功率转换器中可运用的磁器件及用于形成该磁器件的方法。在一个实施方式中，磁器件包括由磁材料形成的直线芯件(701)、定位在直线芯件(701)上的第一U形芯件(702)和第二U形芯件(703)。该磁器件还包括分别围绕第一U形芯件(702)和第二U形芯件(703)形成的第一导电线圈(NS1)和第二导电线圈(NS2)。

Description

使用U形芯件形成的磁器件以及运用该器件的功率转换器
相关专利的交叉引用
本申请要求于2009年3月31日提交的、主题为“磁器件MagneticDevice Formed With U-Shaped Core Pieces and Power ConverterEmploying The Same”的美国临时申请No.61/165,184的权益，该申请在此通过引用并入本文。
技术领域
本申请总体涉及功率电子器件，并且更具体地涉及可运用于功率转换器中的磁器件。
背景技术
开关模式功率转换器(也称为“功率转换器”或“调节器”)是将输入电压波形转换成特定输出电压波形的电源或功率处理电路。DC-DC功率转换器将直流(“dc”)输入电压转换成dc输出电压。与功率转换器相关联的控制器通过控制在其中运用的功率开关的导通时间段来管理其操作。一般而言，控制器以反馈回路(也称为“控制回路”或“闭合控制回路”)配置耦合在功率转换器的输入和输出之间。
为了生成dc输出电压，功率转换器运用诸如电感器和变压器之类的磁器件。向磁器件的线圈施加高频交流(“ac”)电压，该电压通常通过磁器件的感应动作被转换成另一电压电平。经转换的电压电平由二极管或有源半导体器件整流以生成dc输出电压。
为了产生高水平的功率转换效率，经常使用在单层中绕制的线圈形成磁器件，以减少由在邻近线圈匝中流动的高频电流产生的邻近效应。邻近效应导致高频电流主要仅在导电线圈的部分中流动，从而增加线圈的有效电阻。
常规地由诸如“E”和“I”芯件之类的直线芯件构造磁器件，该直线芯件被运用于形成高频变压器或电感器。根据实际的制造考虑，这类设计要求在磁芯的“E”部的竖直壁上形成单层线圈。使用该线圈结构的设计并不利用磁芯的“E”或“I”芯件的水平壁，并且相应地引入高水平的功率损耗。
因此，本领域所需的是一种磁器件的物理结构和相关方法，其提供一种配置以允许线圈匝的较宽分布以避免现有技术中的缺陷。
发明内容
通过本发明的有利的实施方式，总体上解决了或规避了这些问题和其他一些问题，并且总体上实现了有利的技术优势，本发明的有利实施方式包括使用U形芯件形成的在功率转换器中可运用的磁器件以及形成该磁器件的方法。在一个实施方式中，磁器件包括由磁材料形成的直线芯件、定位在该直线芯件上的第一U形芯件和第二U形芯件。该磁器件还包括分别围绕第一U形芯件和第二U形芯件形成的第一导电线圈和第二导电线圈。
前面的内容已较宽泛地概述了本发明的特征和技术优势，这是为了可以更好地理解随后对本发明的详细描述。下文中将描述本发明的、形成本发明权利要求主题的附加特征和优势。本领域技术人员应该理解，所公开的概念和具体实施方式可以容易地被利用为用于修改或设计用于执行本发明的相同目的的其他结构或过程的基础。本领域技术人员还应该意识到，这类等同构造并不偏离如在所附权利要求中阐述的本发明的精神实质和范围。
附图说明
为了更为完整地理解本发明，现在结合所附附图参考下面的描述，在附图中：
图1图示了根据本发明原理而构造的功率转换器的实施方式的框图；
图2至图4图示了根据本发明的原理而构造的、在功率转换器中可运用的示例性功率链(power train)的示意图；以及
图5至图9图示了根据本发明的原理而构造的磁器件的实施方式的图。
除非另有指示，在不同的附图中对应的标号和符号一般指代对应部件，并且为了简洁起见在第一个实例之后可以不再次描述对应的标号和符号。附图被绘制成图示示例性实施方式的相关方面。
具体实施方式
下面详细论述一些示例性实施方式的制造和使用。然而应该理解，本发明提供许多可以体现在许多具体上下文中的可应用的发明构思。所论述的具体实施方式仅是说明制造和使用本发明的特定方式，并且并非是对本发明范围的限制。
将参照在具体上下文中的一些示例性实施方式描述本发明，即包括U形芯件的磁器件以及形成该磁器件的方法。包括U形芯件的磁器件通过为绕其形成的导电材料的单层线圈的匝供应较大的物理空间来提供改进的功率转换效率。虽然将在用于功率转换器的磁器件的环境中描述本发明的原理，但是受益于该磁器件的任何应用(诸如功率放大器或电机控制器)都在本发明的广泛的范围内。
首先参见图1，图示了包括根据本发明的原理而构造的磁器件的功率转换器的一个实施方式的框图。功率转换器耦合到诸如ac电源之类的电力源，该电力源由提供输入电压Vin的ac电源表示。功率转换器包括由控制器110控制的功率链105。控制器110一般测量功率转换器的操作特性(诸如输出电压Vc)，并且响应于所测量的操作特性控制功率转换器中的一个或多个功率开关的占空比D以调节该特性。功率转换器可以形成电源的一个部分并且可以提供功率给该电源的另一子系统，诸如耦合到电源输出的、向负载提供经调节的电压的隔离的dc-dc功率转换器。功率链105可以运用本文描述的升压拓扑。功率转换器的功率链105可以包括耦合到磁器件以提供功率转换功能的多个功率开关。
现在参见图2，图示了在根据本发明的原理而构造的功率转换器中可运用的示例性功率链(包括升压拓扑)201的示意图。功率转换器的功率链201在其输入处接收来自诸如ac电源之类的电力源的输入电压Vin(例如未经调节的ac输入电压)，并且在功率转换器的输出端子205、206处提供经调节的输出电压VC。根据升压拓扑的原理，输出电压VC一般高于输入电压Vin，从而使得功率转换器的开关操作可以调节输出电压VC。主功率开关S1(例如，N沟道金属氧化物半导体(“NMOS”)有源开关或开关)通过栅极驱动信号GD启用，以导通持续主间隔(primary interval)，并且该主功率开关S1将输入电压Vin通过整流电桥203耦合到升压电感器Lboost。在主间隔D期间，输入电流iin增加并且流过升压电感器到本地电路地。通常使用单层线圈形成升压电感器Lboost以减少邻近效应，从而增加功率转换器的效率。
根据下式，功率链201在稳态中的占空比取决于相应输入电压Vin和输出电压Vc的比率：
D = 1 - V in V c
在互补间隔1-D期间，主功率开关S1转变为非导通状态，而辅功率开关(例如，二极管D1)导通。在备选的电路布置中，辅功率开关D1可以包括第二有源功率开关，其通过互补栅极驱动信号而被控制导通。辅功率开关D1提供路径以维持流过升压电感器Lboost的输入电流iin的连续性。在互补间隔1-D期间，流过升压电感器Lboost的输入电流iin减少，并且输入电流iin可以变为零并且在一段时间内保持为零，从而导致操作的“非持续导通模式”。
在互补间隔1-D期间，流过升压电感器Lboost的输入电流iin流动通过二极管D1(即辅功率开关)到输出滤波电容器C。一般而言，可以调节主功率开关S1的占空比(以及辅功率开关D1的互补占空比)以维持功率转换器的输出电压VC的调节。本领域技术人员理解，可以通过使用“缓冲器”电路元件(未示出)或通过控制电路时序而将主功率开关和辅功率开关的导通时间段分开一个小的时间间隔以避免这两者之间的交叉导通电流，并且有利地减少了与功率转换器相关联的开关损耗。用以避免功率开关之间的交叉导通电流的电路和控制技术为本领域所理解，并且为了简便起见不对其进行进一步描述。优选地使用如之前描述的单层线圈来形成升压电感器Lboost以减少与邻近效应相关联的功率损耗。
现在参见图3，图示了在根据本发明的原理而构造的功率转换器中可运用的示例性功率链(包括升压拓扑)300的示意图。功率链300包括第一升压调节器子电路，该第一升压调节器子电路包括第一升压电感器Lboost1、第一二极管D 1和接收第一驱动信号GDS1的第一功率开关S1。功率链300包括第二升压调节器子电路，该第二升压调节器子电路包括第二升压电感器Lboost2、第二二极管D2和接收第二驱动信号GDS2的第一功率开关S2。第一升压调节器子电路和第二升压调节器子电路一般地被控制为相对于彼此相差约180度地操作。升压调节器子电路的异相操作提供了以下交织效果：使纹波频率加倍，并且减少了汲取自整流电桥303的纹波幅度因而减少了汲取自输入电流iin的纹波幅度。对供应到输出滤波电容器C的电流实现了类似的效果。输入电流iin中开关纹波幅度的减少帮助减少对输入滤波器(未示出)减少不期望的高频分量的滤波要求，该不期望的高频分量可能被传导回诸如ac电源之类的电力源。实质益处来自两个升压调节器子电路之间的交织效果。使用磁结构中的单层线圈形成第一升压电感器和第二升压电感器。图3和相继的附图中的其余电路元件类似于图2中的电路元件，并且为了简洁起见省略对其进行描述。
现在参见图4，图示了在根据本发明的原理而构造的功率转换器中可运用的示例性功率链的示意图。更具体而言，该功率链运用具有两个交织的升压调节器子电路的升压拓扑和由磁器件形成的升压电感器Lboost。该磁器件包括公共导电线圈或线圈NC(耦合在磁器件的端子1和端子2之间)、第一导电线圈或线圈NS1(耦合在端子2和端子3之间)以及第二导电线圈或线圈NS2(耦合在端子2和端子4之间)。第一线圈NS1和第二线圈NS2电耦合并且磁耦合到公共线圈NC。在一个示例性实施方式中，第一线圈NS1和第二线圈NS2具有相等数目的匝，并且在下文中使用参考符号NS表示。在图4中邻近线圈图示点以指示每个线圈的指向(即线圈方向和在其中所引起的磁感应电压的指向)。
在一个示例性实施方式中，交织的升压调节器子电路由控制电路或控制器(未示出)控制，以提供具有高功率因子的输入电流。一个升压调节器子电路包括第一二极管D1和第一功率开关S1，以及磁器件的、包括公共线圈NC和第一线圈NS1的部分。另一升压调节器子电路包括第二二极管D2和第二功率开关S2，以及磁器件的、包括公共线圈NC和第一线圈NS2的部分。来自功率链的升压调节器子电路的输出电流i1、i2被交织，并且分别流动通过第一二极管D 1和第二二极管D2到输出滤波电容器C。类似地，升压调节器子电路的输入电流被交织并且形成通过公共线圈NC的输入电流iin。第一功率开关S1和第二功率开关S2由第一控制信号GDS1和第二控制信号GDS2分别控制，以提供对两个交织的升压调节器子电路中每一个的占空比控制。第一控制信号GDS1和第二控制信号GDS2被控制成相对于彼此相差180度，并且为每个升压调节子电路提供公共的占空比D。由电流源408表示的负载被耦合到功率转换器的输出端子405、406，并且汲取输出电流io。
在此已将具有选定匝的公共线圈NC描述为围绕磁器件的磁芯的中心柱形成。在一个备选的实施方式中，具有选定匝的公共线圈NC可以围绕磁芯的公共柱形成，该公共柱并非是几何上的中心柱。因此，在此关于磁芯的柱使用和说明的术语“中心”和“公共”具有相似的意义，并且包括可以在几何上并非定位为中心柱的磁芯柱。
现在参见图5，图示了根据本发明的原理而构造的磁器件的实施方式的图。该磁器件是具有直线构造和具有单层线圈的升压电感器Lboost。该磁器件包括围绕磁芯的公共柱505(其可以是磁芯的中心柱)缠绕的公共线圈NC，并且该公共线圈NC电耦合并且磁耦合到第一线圈NS1和第二线圈NS2，该第一线圈NS1和第二线圈NS2均形成在单层中并且均围绕磁芯的单独的柱(例如，分别围绕第一外柱510和第二外柱515)缠绕。公共通量φc流过磁芯的公共柱505。第一通量φ1和第二通量φ2分别流过磁芯的第一外柱510和第二外柱515。第一线圈NS1和第二线圈NS2均常规地形成为磁芯的“E”部的竖直壁上的单层，这限制了这些线圈的导电性。
图5中图示的磁器件的端子1、2、3和4对应于关于图4类似地编号和描述的端子。在图5中图示的磁器件的实施方式中，间隙520(例如，气间隙或其他基本非磁性材料的间隙)形成于磁芯的公共柱505的上表面和上横梁525的下表面之间。在一个备选实施方式中，优选为等长的间隙可以形成于第一外柱510和第二外柱515的上表面和/或上横梁525的下表面之间。在又一实施方式中，并不必须都为等长的间隙形成于所有的柱505、510、515的上表面和上横梁525的下表面之间。线圈方向的指向通过图5中的线圈NC、NS1和NS2的绘图图示。当然，所有线圈NC、NS1和NS2的指向可以反向以产生相同结果，只是磁通量在相反方向上流动。在磁器件的又一备选实施方式中，第一线圈NS1和第二线圈NS2可以在磁器件外电耦合在一起。在磁器件的又一备选实施方式中，公共线圈NC可以被分为两个线圈部件，这两个线圈部件可以在磁器件外电耦合在一起。
现在参见图6，图示了根据本发明的原理而构造的磁器件的实施方式的图。磁器件包括由直线芯件或中心直线芯件601(由磁材料形成)隔开的第一U形芯件602和第二U形芯件603。第一U形芯件602和第二U形芯件603形成环形芯的部分并且优选地由高磁导率磁材料(诸如软铁氧体)形成。诸如第一导电线圈NS1和第二导电线圈NS2之类的导电线圈均分别围绕沿第一U形芯件602和第二U形芯件603的基本整个跨距或基本整个弯曲长度形成。第三导电线圈或线圈(例如，公共或中心导电线圈)NC绕直线芯件601形成，并且电耦合到第一导电线圈NS1和第二导电线圈NS2。在此示出的磁器件将这三个电感器集成并且耦合成一个磁器件。
现在参见图7，图示了根据本发明的原理而构造的磁器件的实施方式的图。磁器件包括第一U形芯件702和第二U形芯件703。第一U形芯件702和第二U形芯件703现在定位在直线芯件或中心直线芯件701的公共表面上。同样地，第一U形芯件702和第二U形芯件703优选地由高磁导率磁材料(诸如具有大于50的相对磁导率的磁材料)形成。例如，并且不加限制地，第一U形芯件702和第二U形芯件703可以由软铁氧体形成。第一导电线圈NS1或第二导电线圈NS2可以均分别围绕或基本上沿第一U形芯件702和第二U形芯件703的整个跨距形成。为了简化图7中图示的绘图，第一导电线圈NS1和第二导电线圈NS2被示出为仅分别跨第一U形芯件702和第二U形芯件703的一部分。可以形成为U字形(staple)的第三导电线圈(例如，公共或中心导电线圈)NC同样地围绕直线芯件701形成。
如图5所示，磁器件的中心柱505包括间隙或低磁导率“间隔件”520，在其中存储有磁器件的大部分磁能。为了减少因电流分别在第一导电线圈NS1和第二导电线圈NS2中的流动而导致图6和图7中的第一U形芯件和第二U形芯件磁通量失配，可以在由第一U形芯件和第二U形芯件形成的外柱的通量路径中包括间隙。不加限制地，可以由非磁性材料或低磁导率磁材料(诸如空气)、塑料材料或分布在诸如树脂或环氧树脂之类的非磁性基质中粉状软铁氧体来形成间隙。
现在参见图8，图示了根据本发明的原理而构造的磁器件实施方式的图。磁器件包括定位在直线芯件或中心直线芯件801的公共表面上的第一U形芯件802和第二U形芯件803。可以由非磁性间隔件形成的第一间隙804和第二间隙805分别被定位在第一U形芯件802和第二U形芯件803与直线芯件801之间，以减少因电流在第一导电线圈NS1或第二导电线圈NS2中流动导致的第一U形芯件802和第二U形芯件803中磁通量的失配。同样地，围绕直线芯件801形成第三导电线圈(例如，公共或中心导电线圈)NC。
现在参见图9，图示了根据本发明的原理而构造的磁器件实施方式的图。磁器件包括定位在直线芯件或中心直线芯件901的公共表面上的第一U形芯件902和第二U形芯件903。直线芯件901由具有分布式间隙的磁材料构造而成。换言之，使用具有比第一U形芯件902和第二U形芯件903的相对磁导率低的磁导率的磁材料(诸如，分布在诸如树脂或环氧树脂之类的基质中的粉状软铁氧体)构造直线芯件901。以此方式，形成与磁结构的公共或中心柱(例如直线芯件901)中流动的通量相连的间隙，以及形成与在外柱(例如，第一U形芯件902和第二U形芯件903)中流动的通量相连的间隙。如此地使用不同的磁性材料，诸如相比于直线芯件901的相对磁导率，第一U形芯件902和第二U形芯件903的相对磁导率更高，这允许一种磁结构的构造，其无需插入物理间隔件以生成一系列的低磁导率间隙并且无需精确缩短“E”芯件的中心或公共柱以生成一系列空气间隙以供通量在其中流动，从而降低了制造成本。
因此，在此介绍了包括U形芯件的磁器件以及用于形成该磁器件的方法。在一个实施方式中，磁器件包括由磁性材料形成的直线芯件。直线芯件可以被形成为具有分布式空气间隙。磁器件还包括由高相对磁导率磁性材料形成并且定位在直线芯件上的第一U形芯件和第二U形芯件。第一U形芯件和第二U形芯件可以定位在直线芯件的公共表面上，并且可以形成环形芯的一部分。非磁性间隔件可以定位在第一U形芯件和第二U形芯件之一与直线芯件的表面之间。典型地，直线芯件的相对磁导率基本上低于第一U形芯件和第二U形芯件的相对磁导率。
磁器件还包括分别围绕第一U形芯件和第二U形芯件形成的第一导电线圈和第二导电线圈。第一导电线圈和第二导电线圈可以分别在第一U形芯件和第二U形芯件的基本整个弯曲长度之上形成。磁器件还可以包括围绕直线芯件形成并且电耦合到第一导电线圈和第二导电线圈的第三导电线圈(例如，公共或中心导电线圈)。
本领域技术人员应当理解，仅出于示例目的而提出了一种包括定位在直线芯件上的U形芯件的磁器件的功率转换器及其相关形成方法的前述实施例。尽管已经在功率转换器的环境中描述了磁结构，但是磁结构也可以应用于其它系统，这些系统诸如但不限于功率放大器和电机控制器。
为了更好地理解功率转换器，参见纽约州纽约市Van NostrandReinhold公司的Rudolph P.Severns和Gordon Bloom的“ModernDC-to-DC Power Switch-mode Power Converter Circuits”(1985)和J.G.Kassakian、M.F.Schlecht和G.C.Verghese的“Principles ofPower Electronics”Addison-Wesley(1991)。前述参考文献通过引用整体结合于此。
另外，虽然已经详细描述了本发明及其优点，但是应当理解可以对其进行各种改变、替换和变更而不脱离如所附权利要求书限定的本发明精神实质和范围。例如，上文讨论的诸多过程可以用不同方法实施并且可以用其它过程取代，或者其组合。
另外，本申请的范围并不旨在限于在说明书中描述的过程、机器、制品、物质组成、装置、方法和步骤的具体实施例。如本领域普通技术人员将根据本发明的公开内容容易理解的那样，可以根据本发明利用执行与这里描述的对应实施例基本上相同的功能或者实现基本上相同的结果的、当前存在或者以后将开发的过程、机器、制品、物质组成、装置、方法或者步骤。因而，所附权利要求书旨在于将这样的过程、机器、制品、物质组成、装置、方法或者步骤包括在它们的范围内。

Claims (30)

1.一种磁器件，包括：
由磁性材料形成的直线芯件；
将其端部定位在所述直线芯件的公共表面上的第一U形芯件和第二U形芯件；
分别围绕所述第一U形芯件和所述第二U形芯件形成的第一导电线圈和第二导电线圈；以及
第三导电线圈，其围绕所述直线芯件被形成并且在公共端子处被电耦合到所述第一导电线圈和所述第二导电线圈。
2.根据权利要求1的磁器件，其中所述第一导电线圈和所述第二导电线圈分别在所述第一U形芯件和所述第二U形芯件的基本整个弯曲长度之上形成。
3.根据权利要求1的磁器件，其中所述第一U形芯件和所述第二U形芯件由软铁氧体形成。
4.根据权利要求1的磁器件，还包括定位在所述第一U形芯件和所述第二U形芯件中至少之一的所述端部与所述直线芯件的所述公共表面之间的非磁性间隔件。
5.根据权利要求1的磁器件，其中所述第一U形芯件和所述第二U形芯件被所述直线芯件的所述公共表面的一部分所分开。
6.根据权利要求1的磁器件，其中所述第三导电线圈形成为U字形。
7.根据权利要求1的磁器件，其中所述第一导电线圈和所述第二导电线圈相应地被形成为围绕所述第一U形芯件和所述第二U形芯件的单层。
8.根据权利要求1的磁器件，其中所述直线芯件被形成为具有分布式间隙。
9.根据权利要求1的磁器件，其中所述直线芯件的相对磁导率基本上低于所述第一U形芯件和所述第二U形芯件的相对磁导率。
10.根据权利要求1的磁器件，其中所述第一U形芯件和所述第二U形芯件均形成为环形芯的一部分。
11.一种用于形成磁器件的方法，包括：
提供为磁材料的直线芯件；
将第一U形芯件的端部和第二U形芯件的端部定位在所述直线芯件的公共表面上；
形成分别围绕所述第一U形芯件和所述第二U形芯件的第一导电线圈和第二导电线圈；以及
形成第三导电线圈，其围绕所述直线芯件并且在公共端子处被电耦合到所述第一导电线圈和所述第二导电线圈。
12.根据权利要求11的方法，其中所述第一导线线圈和所述第二导电线圈分别在所述第一U形芯件和所述第二U形芯件的基本整个弯曲长度之上形成。
13.根据权利要求11的方法，其中所述第一U形芯件和所述第二U形芯件由软铁氧体形成。
14.根据权利要求11的方法，还包括将非磁性间隔件定位在所述第一U形芯件和所述第二U形芯件中至少之一的所述端部与所述直线芯件的所述公共表面之间。
15.根据权利要求11的方法，其中所述第一U形芯件和所述第二U形芯件被所述直线芯件的所述公共表面的一部分所分开。
16.根据权利要求11的方法，其中所述第三导电线圈形成为U字形。
17.根据权利要求11的方法，其中所述第一导电线圈和所述第二导电线圈相应地被形成为围绕所述第一U形芯件和所述第二U形芯件的单层。
18.根据权利要求11的方法，其中所述直线芯件被形成为具有分布式间隙。
19.根据权利要求11的方法，其中所述直线芯件的相对磁导率基本上低于所述第一U形芯件和所述第二U形芯件的相对磁导率。
20.根据权利要求11的方法，其中所述第一U形芯件和所述第二U形芯件均形成为环形芯的一部分。
21.一种功率转换器，包括：
磁器件，包括：
由磁性材料形成的直线芯件；
将其端部定位在所述直线芯件的公共表面上的第一U形芯件和第二U形芯件；
分别围绕所述第一U形芯件和所述第二U形芯件形成的第一导电线圈和第二导电线圈；以及
第三导电线圈，其围绕所述直线芯件被形成并且在公共端子处被电耦合到所述第一导电线圈和所述第二导电线圈；
耦合到所述第一导电线圈的第一功率开关；
耦合到所述第二导电线圈的第二功率开关；以及
配置成提供控制信号给所述第一功率开关和所述第二功率开关的控制器。
22.根据权利要求21的功率转换器，其中所述第一导电线圈和所述第二导电线圈分别在所述第一U形芯件和所述第二U形芯件的基本整个弯曲长度之上形成。
23.根据权利要求21的功率转换器，其中所述第一U形芯件和所述第二U形芯件由软铁氧体形成。
24.根据权利要求21的功率转换器，其中所述磁器件还包括定位在所述第一U形芯件和所述第二U形芯件中至少之一的所述端部与所述直线芯件的所述公共表面之间的非磁性间隔件。
25.根据权利要求21的功率转换器，其中所述第一U形芯件和所述第二U形芯件被所述直线芯件的所述公共表面的一部分所分开。
26.根据权利要求21的功率转换器，其中所述第三导电线圈形成为U字形。
27.根据权利要求21的功率转换器，其中所述第一导电线圈和所述第二导电线圈相应地被形成为围绕所述第一U形芯件和所述第二U形芯件的单层。
28.根据权利要求21的功率转换器，其中所述直线芯件被形成为具有分布式间隙。
29.根据权利要求21的功率转换器，其中所述直线芯件的相对磁导率基本上低于所述第一U形芯件和所述第二U形芯件的相对磁导率。
30.根据权利要求21的功率转换器，其中所述第一U形芯件和所述第二U形芯件均形成为环形芯的一部分。
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