CN102339940A - Light emitting diode packaging structure and manufacturing method thereof - Google Patents

Abstract

The invention relates to a light-emitting diode packaging structure, which includes a substrate, a light-emitting structure, packaging glue and a circuit structure. The substrate includes a first surface and a second surface opposite to the first surface. The light emitting structure is grown on the first surface. The encapsulation glue is formed on the first surface and covers the light emitting structure. The circuit structure is formed on the second surface of the substrate and is electrically connected with the light emitting structure. The invention also relates to a manufacturing method of the light emitting diode packaging structure.

Description

Light emitting diode packaging structure and manufacturing method thereof

technical field

The invention relates to a semiconductor package structure, in particular to a light emitting diode package structure and a manufacturing method thereof.

Background technique

Now, Light Emitting Diode (LED) has been widely used in many fields. LEDs generally emit light of a specific wavelength, such as visible light. In the manufacturing process of the traditional LED packaging structure, it is first necessary to provide a wiring base for carrying the LED chip, and then attach the LED chip to the wiring base and electrically connect with the circuit on the wiring base. During the manufacturing process of the LED packaging structure, it is necessary to clamp and position the LED chip, which results in a long time for the entire manufacturing process and increases the chance of defective products due to numerous steps.

Contents of the invention

In view of this, it is necessary to provide a light-emitting diode packaging structure and a manufacturing method that are easy to manufacture.

A light-emitting diode packaging structure, which includes a substrate, a light-emitting structure, packaging glue and a circuit structure. The substrate includes a first surface and a second surface opposite to the first surface. The light emitting structure is grown on the first surface. The encapsulation glue is formed on the first surface and covers the light emitting structure. The circuit structure is formed on the second surface of the substrate and is electrically connected with the light emitting structure.

A method for manufacturing a light-emitting diode packaging structure, comprising the following steps: providing a substrate, the substrate including a first surface and a second surface opposite to the first surface; growing a light-emitting structure on the first surface; forming a circuit structure on the second surface, and electrically connecting the circuit structure with the light-emitting structure; and forming an encapsulant on the first surface to cover the light-emitting structure.

In the manufacturing method of the light-emitting diode packaging structure provided in the embodiment of the present invention, the growth substrate of the light-emitting structure is directly used as the wiring base of the light-emitting diode packaging structure, and the clamping and positioning of the light-emitting diode chip is omitted during the manufacturing process of the light-emitting diode packaging structure. and other steps make the manufacturing process of the light emitting diode packaging structure simpler, save time, and reduce the chance of defective products.

Description of drawings

Fig. 1 is a cross-sectional view of a light emitting diode package structure provided by an embodiment of the present invention.

2-6 are schematic diagrams of the manufacturing method of the LED package structure in FIG. 1 .

Explanation of main component symbols

LED packaging structure 100

Substrates 10

First Surface 11

Second Surface 12

buffer layer 13

Insulation layer 14

Reflective layer 15

Luminous structure 20

Encapsulant 30

Circuit structure 40

First electrode 41

Second electrode 42

First Groove 111

The first containment unit 111a

The second storage part 111b

Step surface 111c

Second groove 121

Through hole 122

Conductive column 411

Wire 412

Detailed ways

The present invention will be further described in detail below in conjunction with the accompanying drawings.

Referring to FIG. 1 , a light emitting diode packaging structure 100 provided by an embodiment of the present invention includes a substrate 10 , a light emitting structure 20 , a packaging glue 30 and a circuit structure 40 .

The substrate 10 has a first surface 11 and a second surface 12 opposite to the first surface 11 . In this embodiment, a first groove 111 is formed on the first surface 11, and the first groove 111 is a stepped groove, which includes a first accommodating portion 111a and a second accommodating portion 111b. A stepped surface 111c is formed between the first accommodating portion 111a and the second accommodating portion 111b, and the stepped surface 111c is substantially parallel to the first surface 11 . Preferably, both the first accommodating portion 111a and the second accommodating portion 111b are trumpet-shaped to facilitate light reflection, that is, the diameter gradually becomes larger along the direction approaching the first surface 11. Preferably, the first accommodating portion The angle formed by the side walls of the accommodating portion 111 a and the second accommodating portion 111 b is between 90 degrees and 150 degrees. A second groove 121 is formed on the second surface 12 , and the second groove 121 extends from the second surface 12 to the bottom wall of the first groove 111 . A through hole 122 penetrating through the second surface 12 and the stepped surface 111c is also formed on the second surface 12 .

The material of the substrate 10 can be selected from silicon, silicon carbide, sapphire and the like. In order to reduce the cost and improve the heat dissipation performance of the substrate 10, in this embodiment, the material of the substrate 10 is silicon. In order to ensure that the circuit structure 40 subsequently formed on the substrate 10 can stably supply power to the light-emitting structure 20 and avoid occurrence of short circuits, etc., in this embodiment, on the second surface 12 of the substrate 10, the first groove 111 An insulating layer 14 is formed on the inner wall of the second groove 121 and the inner wall of the through hole 122 . The material of the insulating layer 14 can be selected from silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ) and the like. A reflective layer 15 is further formed on the insulating layer 14 on the inner wall of the first groove 111 . The material of the reflective layer 15 can be selected from aluminum, silver and other metals. In order to avoid electrical connection between the reflective layer 15 and the light emitting structure 20 , in this embodiment, the reflective layer 15 and the light emitting structure 20 are arranged at intervals.

The light emitting structure 20 is directly grown on the bottom wall of the first groove 111 of the substrate 10 . In order to improve the quality of the grown light emitting structure 20 , preferably, before growing the light emitting structure 20 , a buffer layer 13 is first formed on the bottom wall of the first groove 111 , and then the light emitting structure 20 is formed on the buffer layer 13 . In this embodiment, the buffer layer 13 is a silicon carbide layer formed by directly carbonizing the bottom wall of the first groove 111 . The light emitting structure 20 generally includes an N-type semiconductor layer, a P-type semiconductor layer, and a light-emitting layer located between the N-type semiconductor layer and the P-type semiconductor layer.

The circuit structure 40 includes a first electrode 41 and a second electrode 42 . Both the first electrode 41 and the second electrode 42 are disposed on the second surface 12 of the substrate 10 and are respectively electrically connected to two electrodes (not shown) on the light emitting structure 20 . The first electrode 41 is electrically connected to the light emitting structure 20 through the conductive column 411 and the wire 412 located in the through hole 122 . The second electrode 42 is electrically connected to the light emitting structure 20 through the second groove 121 . In this embodiment, since the step surface 111c is substantially parallel to the first surface 11, it is convenient to wire the light emitting structure 20 to the conductive column 411. In addition, because the step surface 111c is located in the first groove 111, the encapsulation glue 30 The wire 412 can be covered well. The first electrode 41 and the second electrode 42 are made of thermally and electrically conductive materials, so as to be electrically connected to the light emitting structure 20 and at the same time improve the heat dissipation efficiency of the light emitting structure 20. Preferably, the first electrode 41 and the second electrode The second electrode 42 is made of metal or metal alloy.

The encapsulant 30 is filled in the first groove 111 for protecting the light emitting structure 20 from dust, moisture and the like. The encapsulant 30 can be selected from one or a mixture of epoxy resins, silicone resins, and the like. Preferably, the encapsulation glue 30 can be doped with phosphor, and the phosphor can be selected from one or more of yttrium aluminum garnet, terbium yttrium aluminum garnet, nitride, sulfide and silicate The combination.

It can be understood that the light emitting diode package structure 100 in this embodiment is only one of many preferred embodiments of the present invention, the shape of the first groove 111 on the substrate 10, the circuit structure 40 and the light emitting structure 20 The connection method, the formation position of the insulating layer 14, and the like are not limited to this embodiment. In other implementation manners, the light emitting diode package structure 100 may not have the above-mentioned first groove 111 , but the light emitting structure 20 is directly grown on the first surface of the substrate 10 .

Please refer to FIGS. 2-6 , the manufacturing method of the light emitting diode packaging structure 100 includes the following steps:

A substrate 10 is provided, and a first groove 111 is formed on the first surface 11 of the substrate 10 . The first groove 111 can be formed on the first surface 11 of the substrate 10 by means of chemical etching or the like. A boss can be formed at the center of the bottom wall of the first groove 111 , of course, the bottom wall of the first groove 111 can also be a smooth bottom wall.

The light emitting structure 20 is grown on the bottom wall of the first groove 111 of the substrate 10 . The growth refers to a process in which the light emitting structure 20 grows gradually from the crystal nucleus. When a boss is formed at the center of the bottom wall, the light emitting structure 20 may be formed on the boss. Preferably, before growing the light emitting structure 20 , the buffer layer 13 is formed on the bottom wall of the first groove 111 . In this embodiment, the substrate 10 is a silicon substrate. Before growing the light-emitting structure 20, the bottom wall of the first groove 111 is carbonized by passing propane and hydrogen at high temperature to form silicon carbide as the buffer layer 13, and then the carbonization The light emitting structure 20 is grown on the silicon. It can be understood that, in order to improve the quality of the light-emitting structure 20 grown on silicon carbide, other buffer materials can be further formed on silicon carbide. In addition, in order to avoid that the first surface 11 of the substrate 10 and other areas of the inner wall of the first groove 111, such as side walls, are also carbonized during the carbonization process of the bottom wall of the first groove 111, the Before the bottom wall of the first groove 111 is carbonized, an insulating layer 14 is first formed on the first surface 11 of the substrate 10 and the inner wall of the first groove 111 except the area to be carbonized. In this embodiment, the light emitting structure 20 is grown on the buffer layer 13 on the bottom wall of the first groove 111 of the substrate 10 by metal organic chemical vapor deposition (MOCVD).

A through hole 122 and a second groove 121 are formed on the second surface 12 of the substrate 10 . The through hole 122 and the second groove 121 can be formed on the second surface 12 of the substrate 10 by chemical etching or the like.

A circuit structure 40 is formed on the second surface 12 of the substrate 10 and electrically connected to the light emitting structure 20 . In this step, in order to ensure that the circuit structure 40 can stably supply power to the light-emitting structure 20 and avoid short circuits, etc., firstly, on the second surface 12 of the substrate 10, on the inner wall of the first groove 111, on the second The insulating layer 14 is formed on the inner wall of the groove 121 and the inner wall of the through hole 122 .

The light emitting structure 20 is covered with encapsulation glue 30 . In this embodiment, the liquid encapsulant 30 can be injected into the first groove 111 and then cured to protect the light emitting structure 20 .

Before using the encapsulant 30 to cover the light-emitting structure 20 , a reflective layer 15 may be formed on the inner wall of the first groove 111 .

In the manufacturing method of the light-emitting diode packaging structure provided in the embodiment of the present invention, the growth substrate of the light-emitting structure is directly used as the wiring base of the light-emitting diode packaging structure, and the clamping and positioning of the light-emitting diode chip is omitted during the manufacturing process of the light-emitting diode packaging structure. and other steps make the manufacturing process of the light emitting diode packaging structure simpler, save time, and reduce the chance of defective products.

It can be understood that, for those skilled in the art, various other corresponding changes and deformations can be made according to the technical concept of the present invention, and all these changes and deformations should belong to the protection scope of the claims of the present invention .

Claims (10)

1. A light-emitting diode packaging structure, which includes a substrate, a light-emitting structure, packaging glue and a circuit structure, the substrate includes a first surface and a second surface opposite to the first surface, it is characterized in that the light-emitting The structure is grown on the first surface, the encapsulant is formed on the first surface and covers the light emitting structure, the circuit structure is formed on the second surface of the substrate, and is connected with the light emitting structure electrical connection. 2. The light emitting diode packaging structure according to claim 1, wherein a first groove is formed on the first surface, the light emitting structure is grown on the bottom wall of the first groove, and the The encapsulation glue is filled in the first groove. 3. The light-emitting diode packaging structure according to claim 2, wherein the first groove is a stepped groove, which includes a first accommodating portion and a second accommodating portion, and the first accommodating portion A stepped surface is formed between the placing portion and the second accommodating portion, and the stepped surface is substantially parallel to the first surface. 4. The light emitting diode packaging structure according to claim 3, wherein: the circuit structure includes a first electrode and a second electrode; a second electrode extending from the second surface is formed on the second surface of the substrate. A second groove to the bottom wall of the first groove, and a through hole passing through the second surface and the stepped surface; the first electrode is punched with a light-emitting structure through a conductive column located in the through hole The second electrode is electrically connected to the light emitting structure through the second groove. 5. The light emitting diode package structure according to claim 4, wherein the first electrode and the second electrode are made of thermally and electrically conductive materials. 6. A method for manufacturing a light-emitting diode packaging structure, comprising the following steps: providing a substrate comprising a first surface and a second surface opposite the first surface; growing a light emitting structure on the first surface; forming a circuit structure on the second surface and electrically connecting the circuit structure to the light emitting structure; and An encapsulant is formed on the first surface to cover the light emitting structure. 7. The method for manufacturing a light emitting diode packaging structure according to claim 6, wherein a first groove is formed on the first surface, and the light emitting structure is grown on the bottom wall of the first groove, And the packaging glue is filled in the first groove. 8. The manufacturing method of the light emitting diode packaging structure according to claim 7, wherein the first groove is a step-shaped groove, which includes a first accommodating portion and a second accommodating portion, the A stepped surface is formed between the first accommodating portion and the second accommodating portion, and the stepped surface is substantially parallel to the first surface; the circuit structure includes a first electrode and a second electrode; the second electrode of the substrate A second groove extending from the second surface to the bottom wall of the first groove is formed on the two surfaces, and a through hole passing through the second surface and the stepped surface; the first electrode passes through A conductive column of the through hole is connected to the light-emitting structure by wire bonding, and the second electrode is electrically connected to the light-emitting structure through the second groove. 9. The manufacturing method of the light emitting diode packaging structure according to claim 8, wherein the first electrode and the second electrode are made of thermally and electrically conductive materials. 10. The method for manufacturing a light-emitting diode packaging structure according to claim 7, wherein the substrate is a silicon substrate, and before growing the light-emitting structure, the bottom wall of the first groove is first carbonized to form a silicon carbide layer .

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