CN102339910A - Preparation method of amorphous silicon thin film solar cell module - Google Patents
Preparation method of amorphous silicon thin film solar cell module Download PDFInfo
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- CN102339910A CN102339910A CN2011102976749A CN201110297674A CN102339910A CN 102339910 A CN102339910 A CN 102339910A CN 2011102976749 A CN2011102976749 A CN 2011102976749A CN 201110297674 A CN201110297674 A CN 201110297674A CN 102339910 A CN102339910 A CN 102339910A
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- amorphous silicon
- tco
- azo
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000005341 toughened glass Substances 0.000 claims abstract description 15
- 239000004642 Polyimide Substances 0.000 claims abstract description 9
- 229920001721 polyimide Polymers 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 238000003475 lamination Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of an amorphous silicon thin film solar cell module, relating to the technical field of solar energy application. The cell module comprises a TCO (Transparent Conducting Oxide) glass layer, an amorphous silicon layer, an AZO film, PVB (Polyvinyl Butyral) rubber layer, a toughened glass layer, an AZO film, an amorphous silicon layer, a TCO layer and a PI (polyimide) layer which are arranged in sequence. According to the preparation method disclosed by the invention, the electric energy production on the unit area of the amorphous solar cell can be effectively increased, and the application range of the amorphous solar cell is wider.
Description
Technical field
The present invention relates to application of solar, be specifically related to a kind of preparation method of amorphous silicon film solar battery assembly.
Background technology
Amorphous silicon film solar battery is as third generation solar cell, because its price is low, pollution-free, the low light level responds many advantages such as good, in field of solar energy, has received the many concerns of People more and more.But because conversion efficiency is low, the battery floor space that identical wattage is installed is big more a lot of than crystal silicon, and today this shortcoming rare day by day in the soil seems particularly outstanding.The energy output that how to improve on the amorphous silicon solar cell unit are just becomes present problem demanding prompt solution.
Summary of the invention
Technical problem to be solved by this invention is: a kind of preparation method who improves the amorphous silicon film solar battery assembly of assembly energy output is provided.
Technical solution of the present invention is: a kind of preparation method of amorphous silicon film solar battery assembly; Battery component is to be arranged in order by TCO glassy layer, amorphous silicon layer, AZO rete, PVB glue-line, toughened glass layer, AZO rete, amorphous silicon layer, tco layer and polyimides PI layer, and the preparation method may further comprise the steps:
A. choose TCO glass, carry out sending into PECVD after laser is drawn quarter, the deposited amorphous silicon layer carries out laser to amorphous silicon layer and draws quarter;
B. SPUTTER processing chamber pressure is controlled at (1～1.5) * 10
-6Mbar, AZO target and cell substrates spacing 80～90mm feed the above Ar gas of purity 4N5, and flow is 300～350slh, sputter AZO film, thickness 500～600nm;
C. laser is drawn and is carved the AZO back electrode, makes the electric layer and the front and back electrode conduction of entire cell, connects the positive and negative lead-in wire of battery at the back electrode face down bonding; And lead-in wire caused the cell panel upper edge; Shop PVB glue behind the battery, thickness is 0.6～0.8mm, sends into autoclave behind the lamination backboard toughened glass and carries out lamination;
D. at toughened glass one side deposition AZO rete, thickness 500～600nm, laser draw and carve the AZO layer;
E. send into PECVD deposited amorphous silicon layer, sedimentary sequence is followed successively by n layer, i layer and p layer, n layer thickness 30～50nm, and i layer thickness 200～300nm, p layer thickness 10～20nm, laser is drawn the amorphous silicon layer at quarter;
F. deposit tco layer, thickness 700～800nm, laser draw the tco layer at quarter, make itself and amorphous silicon, AZO layer form circuit turn-on, at TCO rete welding electrode lead-in wire, are connected to terminal box after causing the cell panel upper edge and the front side battery electrode being parallelly connected;
TCO uses the top polyimides PI transparent substrate to encapsulate, and terminal box is introduced in two battery lead series connection backs.
Technique effect of the present invention is: it can effectively improve the energy output on the amorphous silicon solar cell unit are, makes the scope of its application more extensive.
Embodiment
A kind of preparation method of amorphous silicon film solar battery assembly belongs to field of solar energy.This method is after having prepared first amorphous silicon film solar battery; Another piece amorphous silicon battery of inverted order deposition behind backboard toughened glass; Cause the terminal box of assembly top after the electrode parallel connection of two batteries; Dorsal part battery sensitive surface is opposite with the front side solar cell, thereby makes the entire cell module reach two-sided effect of generating electricity, and has improved the energy output on the amorphous silicon battery unit are.May further comprise the steps:
A. choose light transmittance and surpass the TCO glass more than 90%, carry out first time laser and send into PECVD after drawing quarter, the deposited amorphous silicon layer then carries out second time laser to amorphous silicon layer and draws quarter;
B. SPUTTER processing chamber pressure is controlled at (1～1.5) * 10
-6Mbar, AZO target and cell substrates spacing 80～90mm feed the above Ar gas of purity 4N5, and flow is 300～350slh, sputter AZO film, thickness 500～600nm;
C. laser is drawn and is carved the AZO back electrode, makes the electric layer and the front and back electrode conduction of entire cell, connects the positive and negative lead-in wire of battery at the back electrode face down bonding; And lead-in wire caused the cell panel upper edge; Shop PVB glue behind the battery, thickness is 0.6～0.8mm, sends into autoclave behind the lamination backboard toughened glass and carries out lamination;
D. utilize sputtering technology deposition AZO rete in toughened glass one side, thickness 500～600nm, laser draw and carve the AZO layer;
E. send into PECVD deposited amorphous silicon layer, sedimentary sequence is followed successively by n layer, i layer and p layer, n layer thickness 30～50nm, and i layer thickness 200～300nm, p layer thickness 10～20nm, laser is drawn the amorphous silicon layer at quarter;
F. utilize LPCVD deposition techniques tco layer, thickness 700～800nm.Laser is drawn the tco layer at quarter, makes itself and amorphous silicon, AZO layer form circuit turn-on.At TCO rete welding electrode lead-in wire, be connected to terminal box after causing the cell panel upper edge and the front side battery electrode being parallelly connected;
G. to use light transmittance be that 90%～93% polyimides PI transparent substrate encapsulates TCO top;
Terminal box is introduced in two battery lead series connection backs, and terminal box is welded in the upper edge of entire cell assembly.
This method is after having prepared first amorphous silicon film solar battery; Another piece amorphous silicon battery of inverted order deposition behind backboard toughened glass; Cause the terminal box of assembly top after the electrode parallel connection of two batteries, dorsal part battery sensitive surface is opposite with the front side solar cell, thereby makes the entire cell module reach two-sided effect of generating electricity; Improved the energy output on the amorphous silicon battery unit are, also made the scope of its application more extensive simultaneously.
Embodiment 1:
Choose light transmittance and surpass the TCO glass more than 90%, carry out first time laser and send into PECVD after drawing quarter, the deposited amorphous silicon layer then carries out second time laser to amorphous silicon layer and draws quarter;
SPUTTER processing chamber pressure is controlled at 1*10
-6Mbar, AZO target and cell substrates spacing 80mm feed the above Ar gas of purity 4N5, and flow is 300slh, sputter AZO film, thickness 550nm; Laser is drawn and is carved the AZO back electrode, makes the electric layer and the front and back electrode conduction of entire cell, connects the positive and negative lead-in wire of battery at the back electrode face down bonding; And lead-in wire caused the cell panel upper edge; Shop PVB glue behind the battery, thickness is 0.76mm, sends into autoclave behind the lamination backboard toughened glass and carries out lamination;
Utilize sputtering technology deposition AZO rete in toughened glass one side, thickness 560nm, laser draw and carve the AZO layer; Send into PECVD deposited amorphous silicon layer, sedimentary sequence is followed successively by n layer, i layer and p layer, n layer thickness 30nm, and i layer thickness 200nm, p layer thickness 15nm, laser is drawn the amorphous silicon layer at quarter; Utilize LPCVD deposition techniques tco layer, thickness 750nm.Laser is drawn the tco layer at quarter, makes itself and amorphous silicon, AZO layer form circuit turn-on.At TCO rete welding electrode lead-in wire, be connected to terminal box after causing the cell panel upper edge and the front side battery electrode being parallelly connected;
It is that 90% polyimides PI transparent substrate encapsulates that light transmittance is used in TCO top; Terminal box is introduced in two battery lead series connection backs, and terminal box is welded in the upper edge of entire cell assembly.
Embodiment 2
Choose light transmittance and surpass the TCO glass more than 90%, carry out first time laser and send into PECVD after drawing quarter, the deposited amorphous silicon layer then carries out second time laser to amorphous silicon layer and draws quarter;
SPUTTER processing chamber pressure is controlled at 1.5*10
-6Mbar, AZO target and cell substrates spacing 90mm feed the above Ar gas of purity 4N5, and flow is 350slh, sputter AZO film, thickness 600nm; Laser is drawn and is carved the AZO back electrode, makes the electric layer and the front and back electrode conduction of entire cell, connects the positive and negative lead-in wire of battery at the back electrode face down bonding; And lead-in wire caused the cell panel upper edge; Shop PVB glue behind the battery, thickness is 0.76mm, sends into autoclave behind the lamination backboard toughened glass and carries out lamination;
Utilize sputtering technology deposition AZO rete in toughened glass one side, thickness 600nm, laser draw and carve the AZO layer; Send into PECVD deposited amorphous silicon layer, sedimentary sequence is followed successively by n layer, i layer and p layer, n layer thickness 50nm, and i layer thickness 300nm, p layer thickness 20nm, laser is drawn the amorphous silicon layer at quarter; Utilize LPCVD deposition techniques tco layer, thickness 800nm.Laser is drawn the tco layer at quarter, makes itself and amorphous silicon, AZO layer form circuit turn-on.At TCO rete welding electrode lead-in wire, be connected to terminal box after causing the cell panel upper edge and the front side battery electrode being parallelly connected;
It is that 93% polyimides PI transparent substrate encapsulates that light transmittance is used in TCO top; Terminal box is introduced in two battery lead series connection backs, and terminal box is welded in the upper edge of entire cell assembly.
Claims (3)
1. the preparation method of an amorphous silicon film solar battery assembly; It is characterized in that; Battery component is to be arranged in order by TCO glassy layer, amorphous silicon layer, AZO rete, PVB glue-line, toughened glass layer, AZO rete, amorphous silicon layer, tco layer and polyimides PI layer, and the preparation method may further comprise the steps:
A, choose TCO glass, carry out sending into PECVD after laser is drawn quarter, the deposited amorphous silicon layer carries out laser to amorphous silicon layer and draws quarter;
B, SPUTTER processing chamber pressure are controlled at (1～1.5) * 10
-6Mbar, AZO target and cell substrates spacing 80～90mm feed the above Ar gas of purity 4N5, and flow is 300～350slh, sputter AZO film, thickness 500～600nm;
C, laser are drawn and are carved the AZO back electrode, make the electric layer and the front and back electrode conduction of entire cell, connect the positive and negative lead-in wire of battery at the back electrode face down bonding; And lead-in wire caused the cell panel upper edge; Shop PVB glue behind the battery, thickness is 0.6～0.8mm, sends into autoclave behind the lamination backboard toughened glass and carries out lamination;
D, at toughened glass one side deposition AZO rete, thickness 500～600nm, laser draw and carve the AZO layer;
E, send into PECVD deposited amorphous silicon layer, sedimentary sequence is followed successively by n layer, i layer and p layer, n layer thickness 30～50nm, and i layer thickness 200～300nm, p layer thickness 10～20nm, laser is drawn the amorphous silicon layer at quarter;
F, deposition tco layer, thickness 700～800nm, laser draw the tco layer at quarter, make itself and amorphous silicon, AZO layer form circuit turn-on, at TCO rete welding electrode lead-in wire, are connected to terminal box after causing the cell panel upper edge and the front side battery electrode being parallelly connected;
G, TCO top use polyimides PI transparent substrate to encapsulate, and terminal box is introduced in two battery lead series connection backs.
2. the preparation method of amorphous silicon film solar battery assembly as claimed in claim 1 is characterized in that, chooses TCO glass light transmittance among the said step a and surpasses 90%.
3. the preparation method of amorphous silicon film solar battery assembly as claimed in claim 1 is characterized in that, the polyimides PI transparent substrate light transmittance in the said step g is 90%～93%.
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| CN2011102976749A CN102339910A (en) | 2011-09-27 | 2011-09-27 | Preparation method of amorphous silicon thin film solar cell module |
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| CN2011102976749A CN102339910A (en) | 2011-09-27 | 2011-09-27 | Preparation method of amorphous silicon thin film solar cell module |
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| CN102339910A true CN102339910A (en) | 2012-02-01 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6063996A (en) * | 1996-07-17 | 2000-05-16 | Canon Kabushiki Kaisha | Solar cell module and hybrid roof panel using the same |
| CN201011003Y (en) * | 2007-02-05 | 2008-01-23 | 李毅 | Solar Photovoltaic Sound Barrier |
| CN101789458A (en) * | 2010-02-26 | 2010-07-28 | 刘莹 | Variable band gap double-side transparent electrode thin film solar battery |
| US20110203642A1 (en) * | 2008-12-02 | 2011-08-25 | Skc Co., Ltd. | Envelope material sheet for solar cell module and solar cell module including same |
-
2011
- 2011-09-27 CN CN2011102976749A patent/CN102339910A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6063996A (en) * | 1996-07-17 | 2000-05-16 | Canon Kabushiki Kaisha | Solar cell module and hybrid roof panel using the same |
| CN201011003Y (en) * | 2007-02-05 | 2008-01-23 | 李毅 | Solar Photovoltaic Sound Barrier |
| US20110203642A1 (en) * | 2008-12-02 | 2011-08-25 | Skc Co., Ltd. | Envelope material sheet for solar cell module and solar cell module including same |
| CN101789458A (en) * | 2010-02-26 | 2010-07-28 | 刘莹 | Variable band gap double-side transparent electrode thin film solar battery |
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Application publication date: 20120201 |