CN102332515A - LED (light-emitting diode) and manufacturing method thereof - Google Patents
LED (light-emitting diode) and manufacturing method thereof Download PDFInfo
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- CN102332515A CN102332515A CN201110275878A CN201110275878A CN102332515A CN 102332515 A CN102332515 A CN 102332515A CN 201110275878 A CN201110275878 A CN 201110275878A CN 201110275878 A CN201110275878 A CN 201110275878A CN 102332515 A CN102332515 A CN 102332515A
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Abstract
The invention provides an LED (light-emitting diode) and a manufacturing method thereof. The LED comprises a first semiconductor layer and a second semiconductor layer which is arranged above the first semiconductor layer, wherein a multi-quantum well layer is arranged between the first semiconductor layer and the second semiconductor layer and comprises at least two multi-quantum well structures; the adjacent multi-quantum well structures are connected mutually so as to isolate the first semiconductor layer from the second semiconductor layer; the thicknesses of the at least two multi-quantum well structures are different and reduced gradually from a first position to a second position; and an N electrode is deposited at the first position on the first semiconductor layer, and a P electrode is deposited at the second position on the second semiconductor layer. According to the invention, the recombination velocity of carriers can be improved, thereby improving the internal quantum efficiency of the LED, improving the luminous efficiency of the LED, and being in no need of arranging a current expansion layer which is used in the LED of the prior art.
Description
Technical field
The present invention relates to the semiconductor light emitting technical field, be specifically related to a kind of light-emitting diode and manufacturing approach thereof.
Background technology
Light-emitting diode (LED) is applied to various fields owing to have long, advantage such as power consumption is low of life-span, and especially along with the increasing substantially day by day of its illumination performance index, LED is at the lighting field light-emitting device of doing commonly used.Wherein, be the III-V compound semiconductor characteristics such as band gap is wide, luminance is high, electronics is saturated and drift velocity is high owing to having, chemical property is stable of representative with gallium nitride (GaN), caused people's extensive concern.
Please with reference to Fig. 1, be the generalized section of existing a kind of LED structure, this LED comprises: graphic sapphire substrate 11 is formed with predetermined pattern on this substrate; Be positioned at n type semiconductor layer 12, MQW (MQW, Multi-Quantum Well) layer 13 and p type semiconductor layer 14 on the Sapphire Substrate 11 successively.Wherein, n type semiconductor layer 12 is made up of n-GaN usually, and p type semiconductor layer 14 is made up of p-GaN usually.For for purpose of brevity, not shown electrode among Fig. 1, structure shown in Figure 1 also includes first electrode and second electrode that is connected p type semiconductor layer 14 that connects n type semiconductor layer 12 usually.First electrode is connected with power cathode usually, and second electrode is connected with positive source usually.
Please with reference to Fig. 2, Fig. 2 is the generalized section of multiple quantum well layer 13 shown in Figure 1.A plurality of active layers 132 that multiple quantum well layer 13 generally includes a plurality of barrier layers 131 and separated by barrier layer 131.Said active layer also is called as potential well layer or active layer, and the energy bandgaps between the conduction band energy of said active layer 132 and the valence band energy is less than the energy bandgaps of barrier layer 131, and said active layer 132 constitutes by the III-V semiconducting compound with barrier layer 131.
LED is being used for when luminous; First electrode is connected to power cathode, and second electrode is connected to positive source, because the doping type of n type semiconductor layer 12 and p type semiconductor layer 14; The gallium nitride that the n type mixes drives through external voltage and makes electron drift; The gallium nitride that the p type mixes drives through external voltage and makes hole drift, under the PN junction forward bias, near the PN junction district or in the trap; After high-octane electronics in the conduction band was fallen valence band and hole-recombination, unnecessary energy discharged with the form of light and heat.
Summary of the invention
Technical problem to be solved by this invention provides a kind of light-emitting diode and manufacturing approach thereof, need not in light-emitting diode, to be provided with current extending and can avoid or alleviate current gathering effect.The present invention can also improve the internal quantum efficiency of light-emitting diode.
For solving the problems of the technologies described above, the present invention provides scheme following:
A kind of light-emitting diode comprises:
First semiconductor layer and be positioned at second semiconductor layer of said first semiconductor layer top;
Be folded in the multiple quantum well layer between said first semiconductor layer and second semiconductor layer; Said multiple quantum well layer comprises at least two multi-quantum pit structures; Interconnect between the adjacent multi-quantum pit structure so that first semiconductor layer and second semiconductor layer are isolated, wherein, each is unequal for the thickness of said at least two multi-quantum pit structures; And the direction along primary importance to the second place is successively decreased gradually;
Said primary importance is the position that is used to deposit the N electrode on said first semiconductor layer, and the said second place is the position that is used to deposit the P electrode on said second semiconductor layer.
Preferably, in the above-mentioned light-emitting diode,
The upper surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of second semiconductor layer along the floor height direction.
Preferably, in the above-mentioned light-emitting diode,
The lower surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of first semiconductor layer along the floor height direction.
Preferably, in the above-mentioned light-emitting diode, the lateral length of each said multi-quantum pit structure is all identical.
Preferably, in the above-mentioned light-emitting diode,
The thickness t of the n that begins from a said primary importance said multi-quantum pit structure
n=(r
qt
1-nr
gL)/r
q, n＞1 wherein, t
1Be the thickness of the 1st said multi-quantum pit structure beginning from said primary importance, r
gBe the resistance per unit length of said first semiconductor layer, r
qBe the resistance per unit length of said multi-quantum pit structure, l is the lateral length of said multi-quantum pit structure.
Preferably, in the above-mentioned light-emitting diode,
Along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that descends gradually;
Perhaps, along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that rises gradually;
Perhaps, in the direction along said primary importance to the said second place, the upper surface of said multiple quantum well layer comprises part that is the stair-stepping step surface that descends gradually and the part that is the stair-stepping step surface that rises gradually.
The present invention also provides a kind of manufacturing method for LED, comprising:
Deposit first semiconductor layer;
Said first semiconductor layer is carried out etching, make said first semiconductor layer form the upper surface of a stepped step surface;
On said first semiconductor layer, form multiple quantum well layer; And
On said multiple quantum well layer, form second semiconductor layer;
Form the N electrode be connected with said first semiconductor layer, and the P electrode that is connected with said second semiconductor layer of formation;
Wherein, Said multiple quantum well layer comprises at least two multi-quantum pit structures; Interconnect between the adjacent multi-quantum pit structure so that first semiconductor layer and second semiconductor layer are isolated, wherein, each is unequal for the thickness of said at least two multi-quantum pit structures; And the direction along primary importance to the second place is successively decreased gradually; Said primary importance is the position that is used to deposit the N electrode on said first semiconductor layer, and the said second place is the position that is used to deposit the P electrode on said second semiconductor layer.
Preferably; In the above-mentioned manufacturing approach, saidly on said first semiconductor layer, form multiple quantum well layer, comprising: the multiple quantum well layer of deposition at first with upper horizontal surface; This multiple quantum well layer to deposition carries out etching then; The thickness of each multi-quantum pit structure is not waited, and, successively decrease gradually along the direction of predetermined said primary importance to the predetermined said second place; Wherein, the MQW layer segment that is deposited on each step surface in the upper surface of said first semiconductor layer is a multi-quantum pit structure.
Preferably, in the above-mentioned manufacturing approach, the upper surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of second semiconductor layer along the floor height direction.
Preferably, in the above-mentioned manufacturing approach, the lower surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of first semiconductor layer along the floor height direction.
Preferably, in the above-mentioned manufacturing approach, the lateral length of each said multi-quantum pit structure is all identical.
Preferably, in the above-mentioned manufacturing approach, the thickness t of the n that begins from a said primary importance said multi-quantum pit structure
n=(r
qt
1-nr
gL)/r
q, n＞1 wherein, t
1Be the thickness of the 1st said multi-quantum pit structure beginning from said primary importance, r
gBe the resistance per unit length of said first semiconductor layer, r
qBe the resistance per unit length of said multi-quantum pit structure, l is the lateral length of said multi-quantum pit structure.
Preferably, in the above-mentioned manufacturing approach, along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that descends gradually;
Perhaps, along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that rises gradually;
Perhaps, in the direction along said primary importance to the said second place, the upper surface of said multiple quantum well layer comprises part that is the stair-stepping step surface that descends gradually and the part that is the stair-stepping step surface that rises gradually.
Can find out that from the above light-emitting diode provided by the invention and manufacturing approach thereof are through increasing the section that multiple quantum well layer contacts with semiconductor layer; Make hole or electronics to be injected into SQW by the semiconductor layer side direction; Make the hole arrive the bottom SQW more easily like this, and the distribution density of charge carrier in whole MQW also become evenly, so the present invention can improve the recombination rate of charge carrier; And then improve the internal quantum efficiency of LED, improve the luminous efficiency of LED.And the present invention is designed with a plurality of MQWs of unique varied in thickness with multiple quantum well layer, has avoided the current gathering effect of N electrode, thereby can need not in LED, to be provided with current extending of the prior art.
Description of drawings
Fig. 1 is the generalized section of existing a kind of LED structure;
Fig. 2 is the generalized section of multiple quantum well layer 13 shown in Figure 1;
Fig. 3 is the sketch map of the carrier density of multiple quantum well layer 13 shown in Figure 1;
Fig. 4 is a kind of sketch map of cross-section structure of the LED of the embodiment of the invention;
Fig. 5 is the sketch map of another kind of cross-section structure of the LED of the embodiment of the invention;
Fig. 6 is the sketch map of another cross-section structure of the LED of the embodiment of the invention;
Fig. 7 A～7G is for making the schematic flow sheet of LED shown in Figure 4.
Embodiment
The invention provides a kind of LED and manufacturing approach thereof; Through changing the multiple quantum well layer of LED in the prior art; It is broken into a plurality of continuous multi-quantum pit structures; And each multi-quantum pit structure has different thickness, when improving the charge carrier recombination rate, can also save current extending of the prior art.Below will combine accompanying drawing, the present invention will be further described through specific embodiment.
Please with reference to Fig. 4, the described LED of the embodiment of the invention specifically comprises:
Be folded in the multiple quantum well layer 23 between said first semiconductor layer 22 and second semiconductor layer 24; Said multiple quantum well layer 23 comprises at least two multi-quantum pit structures 231; Interconnect between the adjacent multi-quantum pit structure 231 so that first semiconductor layer 22 and second semiconductor layer 24 are isolated, wherein, each is unequal for the thickness t of said at least two multi-quantum pit structures 231; And the direction along primary importance to the said second place is successively decreased gradually; Said primary importance is the position that is used to deposit N electrode 25 on said first semiconductor layer, and the said second place is the position that is used to deposit P electrode 26 on said second semiconductor layer.
Among Fig. 4, said LED also comprises: be deposited on the N electrode 25 of said primary importance and be deposited on the P electrode 26 of the said second place.In other words, each is unequal for the thickness t of said at least two multi-quantum pit structures 231, and the direction along said N electrode 25 to said P electrode 26 is successively decreased gradually.
Concrete, in the embodiment of the invention, said first semiconductor layer 22 is the n type semiconductor layer, said second semiconductor layer 24 is the p type semiconductor layer; Wherein the n type semiconductor layer can be made up of n-GaN, and the p type semiconductor layer can be made up of p-GaN.
As can beappreciated from fig. 4; The upper surface of first semiconductor layer 22 is stair-stepping step surface in the embodiment of the invention, and the MQW layer segment that is deposited on each step surface is a multi-quantum pit structure 231, like this; Said multiple quantum well layer 23 is made up of a plurality of multi-quantum pit structures 231 on each step surface; Adjacent multi-quantum pit structure 231 joins end to end, and promptly adjacent multi-quantum pit structure 231 touches in flanked, thereby forms above-mentioned connection.And in the direction along said N electrode 25 to P electrode 26, the thickness of each multi-quantum pit structure 231 successively decreases gradually.
Fig. 3 is the sketch map of the carrier density of prior art LED; As can beappreciated from fig. 3; Among the LED of prior art, the hole density on the top layer SQW adjacent with p type semiconductor layer 14 is very big, and reduces gradually from the hole density of top layer SQW each SQW down.Similarly, the electron density on the bottom SQW adjacent with n type semiconductor layer 12 is very big, and reduces gradually from the electron density of bottom SQW each SQW up.That is, top layer SQW hole density is big, and low layer SQW electron density is big.Because there is These characteristics in the carrier density in the MQW, the charge carrier recombination rate among the existing LED is restricted, thereby has seriously limited the internal quantum efficiency (IQE, Internal Quantum Efficiency) of LED.
Review embodiment of the invention LED shown in Figure 4; Can find out; The upper surface of multiple quantum well layer 23 is stair-stepping step surface, and like this, multiple quantum well layer 23 can form and second semiconductor layer, 24 contacted sections along the floor height direction; Make the hole to be injected into MQW, thereby can solve in the prior art because the limited problem of charge carrier recombination rate that the hole crowding effect between second semiconductor layer 24 and the multiple quantum well layer 23 causes from this section side direction.Similarly; The lower surface of multiple quantum well layer 23 also is stair-stepping step surface, and like this, multiple quantum well layer 23 can form and first semiconductor layer, 22 contacted sections along the floor height direction; Make electronics to be injected into MQW from this section side direction; Present embodiment can improve the charge carrier recombination rate thus, and then improves the internal quantum efficiency of LED, has improved the luminous efficiency of LED.
And; The LED of prior art shown in Figure 3 need be employed in the electrode below usually current extending is set, so that the CURRENT DISTRIBUTION of whole epitaxial loayer is even; In order to alleviate or to avoid the LED electric current to be prone to concentrate on the subregion of electrode below; Thereby very easily produce current gathering effect, cause LED luminous, the heating inhomogeneous, degradation problem under useful life.
Review embodiment of the invention LED shown in Figure 4; Can find out; Because the thickness of each multi-quantum pit structure 231 is successively decreasing on said primary importance to the direction of the said second place gradually in the embodiment of the invention; Arrive the resistance on the path of P electrodes 26 via each multi-quantum pit structure 231 thereby changed,, thereby make that to arrive the distribution of electric current of P electrodes 26 along each multi-quantum pit structure 231 more even for the current expansion in the whole LED structure provides better current path from the N electrode; Avoid the current gathering effect of N electrode, thereby can need not to be provided with current extending of the prior art.
As shown in Figure 4, in the embodiment of the invention, shown in LED can also comprise:
The lateral length of each said multi-quantum pit structure 231 can be identical in the present embodiment, also can be different.As a preferred implementation, at the lateral length homogeneous phase of each said multi-quantum pit structure 231 simultaneously, the thickness of the 1st the said multi-quantum pit structure of supposing to begin from said primary importance is t
1, the thickness t of the n that then begins from a said primary importance said multi-quantum pit structure
n=(r
qt
1-nr
gL)/r
q, n＞1 here, r
gBe the resistance per unit length of said first semiconductor layer, r
qBe the resistance per unit length of said multi-quantum pit structure, l is the lateral length (i.e. the tread run of the upper surface step surface of first semiconductor layer 22) of said multi-quantum pit structure.Thickness according to determined each multi-quantum pit structure of above formula; Make from the N electrode via the resistance approximately equal on each path of each multi-quantum pit structure 231 arrival P electrodes 26; Thereby can make electric current in the whole LED structure, be evenly distributed; Overcome current gathering effect of the prior art well, thereby made and need not to be provided with current extending of the prior art among the said LED of present embodiment.
Among Fig. 4, in the direction along said N electrode 25 to said P electrode 26, the upper surface of said multiple quantum well layer 23 is the stair-stepping step surface that descends gradually.Below please with reference to Fig. 5～6, further specify the structure of the LED that the embodiment of the invention can adopt, these structures should not be counted as restriction of the present invention certainly.
Please, comprise graphic sapphire substrate 31, n type semiconductor layer 32, multiple quantum well layer 33, p type semiconductor layer 34, N electrode 35 that is connected with n type semiconductor layer 32 and the N electrode 36 that is connected with p type semiconductor layer 34 with reference to LED shown in Figure 5.Wherein, multiple quantum well layer 33 comprises a plurality of continuous multi-quantum pit structures equally, and wherein adjacent multi-quantum pit structure joins end to end in order to isolate n type semiconductor layer 32 and p type semiconductor layer 34.Can find out that the upper surface of the multiple quantum well layer 33 among Fig. 5 in the direction of the second place along the primary importance of the said N electrode 35 of deposition to the said P electrode 36 of deposition, is the stair-stepping step surface that rises gradually.
LED shown in Figure 6 comprises graphic sapphire substrate 41, n type semiconductor layer 42, multiple quantum well layer 43, p type semiconductor layer 44, N electrode 45 that is connected with n type semiconductor layer 42 and the N electrode 46 that is connected with p type semiconductor layer 44.Wherein, multiple quantum well layer 43 comprises a plurality of continuous multi-quantum pit structures equally, and wherein adjacent multi-quantum pit structure joins end to end in order to isolate n type semiconductor layer 42 and p type semiconductor layer 44.Can find out; The upper surface of the multiple quantum well layer 43 among Fig. 6; In the direction of the second place along the primary importance of the said N electrode 35 of deposition to the said P electrode 36 of deposition, at first be to be the stair-stepping step surface that rises gradually, be to be the stair-stepping step surface that descends gradually then.Certainly, the upper surface of the multiple quantum well layer 43 of present embodiment along said primary importance to the direction of the said second place, can also be at first to be the stair-stepping step surface that descends gradually, is then to be the stair-stepping step surface that rises gradually; Or the various combinations of the stair-stepping step surface that rises and descend.That is, the upper surface of the multiple quantum well layer 43 of the embodiment of the invention had both comprised the part that is the stair-stepping step surface that descends gradually, also comprised the part that is the stair-stepping step surface that rises gradually.
Can find out that from the above multiple quantum well layer comprises a plurality of multi-quantum pit structures in the embodiment of the invention, adjacent multi-quantum pit structure joins end to end, and in the direction along said N electrode to the P electrode, the thickness of each multi-quantum pit structure successively decreases gradually.
At last, the embodiment of the invention has provided the concrete steps that prepare LED shown in Figure 4, comprising:
Deposition specifically can be deposited on the graphic sapphire substrate 21 as the n-GaN layer of first semiconductor layer 22;
Said first semiconductor layer 22 is carried out etching, make said first semiconductor layer form the upper surface of a stepped step surface;
On said first semiconductor layer 22, form multiple quantum well layer 23; And
On said multiple quantum well layer 23, form second semiconductor layer 24;
Wherein, Said multiple quantum well layer comprises at least two multi-quantum pit structures 231; Interconnect between the adjacent multi-quantum pit structure 231 so that first semiconductor layer and second semiconductor layer are isolated, wherein, each is unequal for the thickness of said at least two multi-quantum pit structures 231; And the direction along primary importance to the second place is successively decreased gradually; Said primary importance is the position that is used to deposit the N electrode on said first semiconductor layer, and the said second place is the position that is used to deposit the P electrode on said second semiconductor layer.
Below in conjunction with Fig. 7 A～7G, above step is done further explain.
Form said first semiconductor layer 22, can at first deposit first semiconductor layer (shown in Fig. 7 A), then first semiconductor layer is carried out etching, make it formation and have stair-stepping step surface (shown in Fig. 7 B) with same thickness.
When forming said multiple quantum well layer 23; Can be at first shown in deposition has upper horizontal surface on first semiconductor layer 22 multiple quantum well layer (shown in Fig. 7 C); Then multiple quantum well layer is carried out etching; The thickness of each multi-quantum pit structure is not waited, and along the direction of predetermined said primary importance to the predetermined said second place, (shown in Fig. 7 D) gradually successively decrease.Here, the MQW layer segment that is deposited on each step surface in the upper surface of first semiconductor layer 22 is a multi-quantum pit structure.
Then, on the multiple quantum well layer shown in Fig. 7 D, deposit second semiconductor layer 24, obtain the structure shown in Fig. 7 E.
Then, etching is removed the multiple quantum well layer 23 and second semiconductor layer 24 on said first semiconductor layer, the 22 part upper surfaces, makes that the said primary importance on said first semiconductor layer 22 exposes, shown in Fig. 7 F.
Then; Said primary importance place on said first semiconductor layer 22 forms the N electrode 25 that is connected with said first semiconductor layer 22; And the said second place place on said second semiconductor layer 24 forms the P electrode 26 be connected with said second semiconductor layer 24, obtains the structure shown in Fig. 7 G.
Preferably, in the above method, the upper surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of second semiconductor layer along the floor height direction.
Preferably, in the above method, the lower surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of first semiconductor layer along the floor height direction.
Preferably, in the above method, the lateral length of each said multi-quantum pit structure is all identical.More concrete, the thickness t of the n that begins from a said primary importance said MQW
n=(r
qt
1-nr
gL)/r
q, n＞1 wherein, t
1Be the thickness of the 1st said multi-quantum pit structure beginning from said primary importance, r
gBe the resistance per unit length of said first semiconductor layer, r
qBe the resistance per unit length of said multi-quantum pit structure, l is the lateral length of said multi-quantum pit structure.
Preferably, in the above method, along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that descends gradually;
Perhaps, along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that rises gradually;
Perhaps, in the direction along said primary importance to the said second place, the upper surface of said multiple quantum well layer comprises part that is the stair-stepping step surface that descends gradually and the part that is the stair-stepping step surface that rises gradually.
The above only is an execution mode of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (13)
1. a light-emitting diode is characterized in that, comprising:
First semiconductor layer and be positioned at second semiconductor layer of said first semiconductor layer top;
Be folded in the multiple quantum well layer between said first semiconductor layer and second semiconductor layer; Said multiple quantum well layer comprises at least two multi-quantum pit structures; Interconnect between the adjacent multi-quantum pit structure so that first semiconductor layer and second semiconductor layer are isolated, wherein, each is unequal for the thickness of said at least two multi-quantum pit structures; And the direction along primary importance to the second place is successively decreased gradually;
Said primary importance is the position that is used to deposit the N electrode on said first semiconductor layer, and the said second place is the position that is used to deposit the P electrode on said second semiconductor layer.
2. light-emitting diode as claimed in claim 1 is characterized in that,
The upper surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of second semiconductor layer along the floor height direction.
3. according to claim 1 or claim 2 light-emitting diode is characterized in that,
The lower surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of first semiconductor layer along the floor height direction.
4. light-emitting diode as claimed in claim 1 is characterized in that the lateral length of each said multi-quantum pit structure is all identical.
5. light-emitting diode as claimed in claim 4 is characterized in that,
The thickness t of the n that begins from a said primary importance said multi-quantum pit structure
n=(r
qt
1-nr
gL)/r
q, n＞1 wherein, t
1Be the thickness of the 1st said multi-quantum pit structure beginning from said primary importance, r
gBe the resistance per unit length of said first semiconductor layer, r
qBe the resistance per unit length of said multi-quantum pit structure, l is the lateral length of said multi-quantum pit structure.
6. light-emitting diode as claimed in claim 1 is characterized in that,
Along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that descends gradually;
Perhaps, along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that rises gradually;
Perhaps, in the direction along said primary importance to the said second place, the upper surface of said multiple quantum well layer comprises part that is the stair-stepping step surface that descends gradually and the part that is the stair-stepping step surface that rises gradually.
7. a manufacturing method for LED is characterized in that, comprising:
Deposit first semiconductor layer;
Said first semiconductor layer is carried out etching, make said first semiconductor layer form the upper surface of a stepped step surface;
On said first semiconductor layer, form multiple quantum well layer; And
On said multiple quantum well layer, form second semiconductor layer;
Wherein, Said multiple quantum well layer comprises at least two multi-quantum pit structures; Interconnect between the adjacent multi-quantum pit structure so that first semiconductor layer and second semiconductor layer are isolated, wherein, each is unequal for the thickness of said at least two multi-quantum pit structures; And the direction along primary importance to the second place is successively decreased gradually; Said primary importance is the position that is used to deposit the N electrode on said first semiconductor layer, and the said second place is the position that is used to deposit the P electrode on said second semiconductor layer.
8. manufacturing approach as claimed in claim 7 is characterized in that,
Saidly on said first semiconductor layer, form multiple quantum well layer, comprising:
At first deposit multiple quantum well layer with upper horizontal surface; This multiple quantum well layer to deposition carries out etching then; The thickness of each multi-quantum pit structure is not waited, and, successively decrease gradually along the direction of predetermined said primary importance to the predetermined said second place; Wherein, the MQW layer segment that is deposited on each step surface in the upper surface of said first semiconductor layer is a multi-quantum pit structure.
9. manufacturing approach as claimed in claim 7 is characterized in that,
The upper surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of second semiconductor layer along the floor height direction.
10. like each described manufacturing approach of claim 7～9, it is characterized in that,
The lower surface of said multiple quantum well layer is stair-stepping step surface, so that said multiple quantum well layer is forming and the contacted section of first semiconductor layer along the floor height direction.
11. manufacturing approach as claimed in claim 7 is characterized in that, the lateral length of each said multi-quantum pit structure is all identical.
12. manufacturing approach as claimed in claim 11 is characterized in that,
The thickness t of the n that begins from a said primary importance said multi-quantum pit structure
n=(r
qt
1-nr
g1)/r
q, n＞1 wherein, t
1Be the thickness of the 1st said multi-quantum pit structure beginning from said primary importance, r
gBe the resistance per unit length of said first semiconductor layer, r
qBe the resistance per unit length of said multi-quantum pit structure, l is the lateral length of said multi-quantum pit structure.
13. manufacturing approach as claimed in claim 7 is characterized in that,
Along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that descends gradually;
Perhaps, along said primary importance to the direction of the said second place, the upper surface of said multiple quantum well layer is the stair-stepping step surface that rises gradually;
Perhaps, in the direction along said primary importance to the said second place, the upper surface of said multiple quantum well layer comprises part that is the stair-stepping step surface that descends gradually and the part that is the stair-stepping step surface that rises gradually.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110571311A (en) * | 2019-07-30 | 2019-12-13 | 中国科学技术大学 | A multi-quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device |
| WO2021102666A1 (en) * | 2019-11-26 | 2021-06-03 | 重庆康佳光电技术研究院有限公司 | Light-emitting diode structure |
| CN113054063A (en) * | 2021-02-04 | 2021-06-29 | 中国科学院宁波材料技术与工程研究所 | Ultraviolet light emitting diode, ultraviolet LED epitaxial layer structure and preparation method thereof |
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| US20010032976A1 (en) * | 2000-04-21 | 2001-10-25 | Fujitsu Limited | Semiconductor light-emitting device |
| CN101369531A (en) * | 2007-08-16 | 2009-02-18 | 夏普株式会社 | Semiconductor device and manufacturing method thereof |
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| CN110571311A (en) * | 2019-07-30 | 2019-12-13 | 中国科学技术大学 | A multi-quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device |
| CN110571311B (en) * | 2019-07-30 | 2021-12-14 | 中国科学技术大学 | A multiple quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device |
| WO2021102666A1 (en) * | 2019-11-26 | 2021-06-03 | 重庆康佳光电技术研究院有限公司 | Light-emitting diode structure |
| US11984530B2 (en) | 2019-11-26 | 2024-05-14 | Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. | Light emitting diode structure |
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