CN102315758A - Circuit for improving voltage resistance of device - Google Patents
Circuit for improving voltage resistance of device Download PDFInfo
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- CN102315758A CN102315758A CN2010102226019A CN201010222601A CN102315758A CN 102315758 A CN102315758 A CN 102315758A CN 2010102226019 A CN2010102226019 A CN 2010102226019A CN 201010222601 A CN201010222601 A CN 201010222601A CN 102315758 A CN102315758 A CN 102315758A
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- 239000003381 stabilizer Substances 0.000 claims description 26
- 238000004804 winding Methods 0.000 claims description 7
- 230000005284 excitation Effects 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
Abstract
The invention provides a circuit for improving the voltage resistance of a device. The circuit comprises a first capacitor, a first voltage-stabilizing tube, a first diode, an upper N-channel metal oxide semiconductor (NMOS) tube and a lower NMOS tube, wherein a gate of the upper NMOS tube is connected with a cathode of the first diode; an anode of the first diode is connected with a power supply; the first capacitor is connected between the power supply and the ground; the gate of the upper NMOS tube is grounded through the first voltage-stabilizing tube; a source of the upper NMOS tube is connected with a drain of the lower NMOS tube; the source of the lower NMOS tube is grounded; and the gate of the lower NMOS tube is connected with a pulse width modulation (PWM) driving signal. By adoption of the circuit provided by the invention, loss can be reduced.
Description
Technical field
The present invention relates to electric and electronic technical field, particularly a kind of circuit that improves device withstand voltage.
Background technology
For higher line voltage, for example the 480VAC electrical network designs the problem of choosing difficulty that the Switching Power Supply that is suitable for can run into the high-voltage transistor switching device.For the 480VAC electrical network, consider the fluctuation and the design capacity of line voltage, use traditional Switching Power Supply design need select for use the above transistor of withstand voltage 1000V as switching device.But the above transistor of withstand voltage 1000V belongs to relatively special device, therefore will cause and choose difficulty, cost problem of higher.
Choose difficulty in order to solve high pressure resistant transistor in the prior art, problem that cost is high has proposed several schemes, at first referring to Fig. 1, this figure is the circuit diagram of the raising device withstand voltage that provides in the prior art.
Connect with two NMOS pipe Q1 and Q2 in the circuit shown in Figure 1 voltage endurance capability is provided; Wherein manage the direct driving that Q1 receives pwm control circuit down, when Q1 became shutoff by conducting, the drain electrode of Q1 and the voltage between the source electrode raise; When the drain electrode of Q1 and the voltage between the source electrode during near the voltage of voltage-stabiliser tube ZD1; Grid and the voltage between the source electrode of last pipe Q2 will be lower than the conducting threshold voltage, and therefore, Q2 also gets into off state.When Q1 and Q2 all turn-offed, the voltage that Q1 shares was by the voltage stabilizing value decision of voltage-stabiliser tube ZD1.When Q1 transfers conducting to by shutoff, the voltage between its drain electrode and the source electrode will descend, and resistance R 1 will be for Q2 provides drive current, thereby makes also conducting of Q2.
But there is following shortcoming in circuit shown in Figure 1: for last pipe Q2 provides what drive energy is the energy that resistance R 1 is taken from input voltage vin, because input voltage vin is high pressure (usually above a line voltage); R1 receives the restriction of oneself power consumption; Can not bigger drive current be provided when the Q2 conducting, will make the conducting speed of Q2 slow like this, switching loss and the conduction loss of Q2 are bigger; Therefore the efficient of this circuit is low, only is applicable to the occasion that power is very little usually.
Referring to Fig. 2, this figure is the another kind of high voltage bearing circuit diagram that provides in the prior art.
The circuit that Fig. 2 provides (application number 200810028422.4) is similar with circuit shown in Figure 1, and circuit shown in Figure 2 is shunt capacitance C2 on voltage-stabiliser tube D4.
The C2 discharge can improve the driving of going up pipe Q1 during the Q2 conducting.Replace the voltage-stabiliser tube ZD2 among Fig. 1 with resistance R4 and diode D3 series connection between Q1 grid and the source electrode.
But still there is following shortcoming in circuit shown in Figure 2: for last pipe Q1 provides what drive energy is the energy that resistance R 1 is taken from input voltage vin; Because input voltage vin is high pressure (usually above a line voltage); Resistance R 1 receives the restriction of oneself power consumption, can not bigger drive current be provided for the Q1 conducting; Instantly manage the Q2 pass and have no progeny, the Q2 drain voltage rises, and C2 charges, and reaches the voltage stabilizing value (being generally several hectovolts) of D4 up to voltage; And at switching tube Q1, during the Q2 conducting, capacitor C 2 can be through the discharge of Q1 gate pole, and up to the gate drive voltage that equals switching tube Q1 (tens volts), though the discharge of C2 can improve the driving force of Q1, discharging and recharging in switching process can produce than lossy.Therefore this circuit is compared the occasion applicable to more high-power grade with circuit shown in Figure 1, but efficient is still lower.
Also provide a kind of improvement project (US2008/0080212) as shown in Figure 3 in the prior art, on when managing the SW2 conducting required big drive current provide by capacitor C B1.Voltage distribution when last pipe SW2 and ShiShimonoseki SW1 turn-off is by the voltage decision of capacitor C B1 and capacitor C B2, and the dividing potential drop of CB1 and CB2 is by the no-load voltage ratio decision of winding NP1 and NP2.
But there is following shortcoming in circuit shown in Figure 3: improve though drive the ability that goes up pipe SW2, and, the device that drives SW2 is capacitor C B1.Have identical problem with the prior art of Fig. 2, promptly capacitor C B1 and capacitor C B2 still discharge and recharge for high pressure.Therefore, capacitor C B1 manages SW2 the process that drives energy is provided on giving, and the equilibrium process of CB1 and CB2 voltage exists than lossy.
In sum, all there is the problem than lossy in the circuit that the prior art of more than discussing provides.
Summary of the invention
The technical problem that the present invention will solve provides a kind of circuit that improves device withstand voltage, can improve the voltage endurance capability of device, and reduces the loss of circuit.
The present invention provides a kind of circuit that improves device withstand voltage, comprising: first electric capacity, first voltage-stabiliser tube, first diode, last NMOS pipe and following NMOS pipe;
The grid of last NMOS pipe connects the negative electrode of first diode, and the anode of first diode connects power supply;
Connect first electric capacity between the ground of power supply;
The grid of last NMOS pipe is through the first voltage-stabiliser tube ground connection;
The source electrode of last NMOS pipe connects the drain electrode of NMOS pipe down, the source ground of following NMOS pipe, and the grid of following NMOS pipe connects the PWM drive signal.
Preferably, also comprise the grid that is parallel to NMOS pipe and second voltage-stabiliser tube between the source electrode.
Preferably, said circuit is as the switching tube that is connected with former limit winding in the circuit of reversed excitation.
Preferably, said circuit is as the switching tube in the BUCK circuit, and the drain electrode of last NMOS pipe connects the anode of the diode in the BUCK circuit.
Preferably, said circuit is as the switching tube in the BOOST circuit, and the drain electrode of last NMOS pipe connects the anode of the diode in the BOOST circuit.
The present invention also provides a kind of circuit that improves device withstand voltage, comprising: first electric capacity, first voltage-stabiliser tube, first diode, last IGBT pipe and following IGBT pipe;
The gate pole of last IGBT pipe connects the negative electrode of first diode, and the anode of first diode connects power supply;
Connect first electric capacity between the ground of power supply;
The gate pole of last IGBT pipe is through the first voltage-stabiliser tube ground connection;
The emitter of last IGBT pipe connects the collector electrode of IGBT pipe down, the grounded emitter of following IGBT pipe, and the gate pole of following IGBT pipe connects the PWM drive signal.
Preferably, also comprise the gate pole that is parallel to IGBT pipe and second voltage-stabiliser tube between the emitter.
Preferably, said circuit is as the switching tube that is connected with former limit winding in the circuit of reversed excitation.
Preferably, said circuit is as the switching tube in the BUCK circuit, and the collector electrode of last IGBT pipe connects the anode of the diode in the BUCK circuit.
Preferably, said circuit is as the switching tube in the BOOST circuit, and the collector electrode of last IGBT pipe connects the anode of the diode in the BOOST circuit.
Compared with prior art, the present invention has the following advantages:
The circuit of raising device withstand voltage provided by the invention, the driving voltage that offers the NMOS pipe directly comes from power supply, does not therefore need any change-over circuit.When last NMOS managed conducting, needed driving energy when power supply only need provide the conducting of NMOS pipe gate pole did not have other loss; When the NMOS pipe turn-offed instantly, first diode separated the power supply and first voltage-stabiliser tube, did not therefore also produce extra loss.Therefore, the circuit that provides of the embodiment of the invention can reduce the wastage.
Description of drawings
Fig. 1 is the circuit diagram of the raising device withstand voltage that provides in the prior art;
Fig. 2 is that another that provide in the prior art improves the circuit diagram of device withstand voltage;
Fig. 3 is the circuit diagram that the another kind that provides in the prior art improves device withstand voltage;
Fig. 4 is the circuit diagram that the embodiment of the invention one provides;
Fig. 5 is the circuit of the raising device withstand voltage that provides of the embodiment of the invention two;
Fig. 6 is a kind of application circuit of circuit provided by the invention;
Fig. 7 is another application circuit of circuit provided by the invention;
Fig. 8 is the another kind of application circuit of circuit provided by the invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Referring to Fig. 4, this figure is the circuit diagram that the embodiment of the invention one provides.
The circuit of the raising device withstand voltage that the embodiment of the invention provides comprises: first capacitor C 1, the first voltage-stabiliser tube ZD1, the first diode D1, go up NMOS pipe Q2, NMOS pipe Q1 down;
Wherein, the grid of last NMOS pipe Q2 connects the negative electrode of the first diode D1, and the anode of the first diode D1 connects power Vcc.
Be connected first capacitor C 1 between power Vcc and the ground.
The grid of last NMOS pipe is through the first voltage-stabiliser tube ZD1 ground connection;
The source electrode of last NMOS pipe connects the drain electrode of NMOS pipe down, the source ground of following NMOS pipe, and the grid of following NMOS pipe connects PWM drive signal Vd.
Specify the operation principle of this circuit that the embodiment of the invention provides below in conjunction with Fig. 4.
Following NMOS pipe Q1 receives the direct driving of pwm control circuit, and wherein Vd is the PWM drive signal.
When Q1 receives the driving of PWM drive signal to become shutoff by conducting; The drain electrode of Q1 and the voltage between the source electrode raise; The first diode D1 bears back-pressure and turn-offs; When the voltage between the DS of Q1 drain electrode and the source electrode during near the voltage stabilizing value of the first voltage-stabiliser tube ZD1, grid and the voltage between the source electrode that last NMOS manages Q2 are lower than the conducting threshold voltage, and Q2 also will get into off state.When Q1 and Q2 turn-offed, the voltage that Q1 shares was by the voltage stabilizing value decision of the first voltage-stabiliser tube ZD1.
When the grid of Q1 has high level to drive, drain electrode and the voltage between the source electrode of Q1 will descend until complete conducting.When the voltage at the drain electrode of Q1 and source electrode two ends is low, the first diode D1 conducting, Vcc and then for Q2 provides enough driving voltage and electric currents makes also conducting of Q2.Vcc is owing to the gate drive voltage that the conducting of Q2 ability only need be provided, so amplitude is very low, can meet the demands about general tens V.
Among the present invention, the driving voltage that offers Q2 directly comes from Vcc, does not need any change-over circuit, and when the Q2 conducting, Vcc only provides the gate pole conducting to drive energy needed, does not have other loss; When Q1 turn-offed, the first diode D1 opened Vcc and first voltage-stabiliser tube ZD1 branch, does not also produce extra loss.Therefore, the circuit that provides of the embodiment of the invention can reduce the wastage.
The embodiment of the invention also provides a kind of circuit that improves device withstand voltage, and referring to Fig. 5, this figure is the circuit of the raising device withstand voltage that provides of the embodiment of the invention two.
The circuit of the raising device withstand voltage that present embodiment provides and the difference of embodiment one are to have increased the clamping protection circuit.As shown in Figure 5, parallelly connected clamping protection circuit between the grid of Q2 and the source electrode can be clamped at the grid voltage of Q2 within the safe range.Clamping protection circuit in the present embodiment is a voltage-stabiliser tube, the second voltage-stabiliser tube ZD2 as shown in Figure 5.
Need to prove that going up in the circuit of the raising device withstand voltage that above embodiment provides managed and following Guan Jun is the NMOS pipe, it is understandable that pipe and following pipe also can be for IGBT manage, except last pipe was different with following pipe, the circuit of other parts was all identical.Therefore, its operation principle repeats no more at this.
The circuit of the raising device withstand voltage that present embodiment provides comprises: first electric capacity, first voltage-stabiliser tube, first diode, last IGBT pipe and following IGBT pipe;
The gate pole of last IGBT pipe connects the negative electrode of first diode, and the anode of first diode connects power supply;
Connect first electric capacity between the ground of power supply;
The gate pole of last IGBT pipe is through the first voltage-stabiliser tube ground connection;
The emitter of last IGBT pipe connects the collector electrode of IGBT pipe down, the grounded emitter of following IGBT pipe, and the gate pole of following IGBT pipe connects the PWM drive signal.
Need to prove that the circuit integral body of the raising device withstand voltage that the embodiment of the invention provides can be used as a switching tube and uses, the essence of its operation principle is with two switching tubes increase voltage endurance capability that is together in series.Introduce the application scenario of several kinds of typical these circuit below as switching tube.
Referring to Fig. 6, this figure is a kind of application circuit of circuit provided by the invention.
The switching tube that present embodiment provides is to be applied to circuit of reversed excitation.
As shown in Figure 6; In the empty frame is the circuit of raising device withstand voltage provided by the invention; Its integral body is used as a switching tube, and the drain electrode of last NMOS pipe Q2 connects the end of the same name of the former limit winding of transformer T1, and the end of the same name of the secondary winding of transformer T1 connects output plus terminal through the second diode D2.Parallelly connected second capacitor C 2 between output plus terminal and the output negative terminal.
Wherein the typical application of circuit of reversed excitation is to be applied in the Switching Power Supply, and its input voltage is Vin, and output voltage is Vo.If input voltage vin is bigger, just need the voltage endurance capability of switching tube stronger this moment, withstand voltage higher.
Referring to Fig. 7, this figure is another application circuit of circuit provided by the invention.
The switching tube that present embodiment provides is to be applied to the BUCK circuit.
As shown in Figure 7, in the empty frame circuit of raising device withstand voltage provided by the invention, its integral body is used as a switching tube, and the drain electrode of last NMOS pipe Q2 connects the anode of the second diode D2 in the BUCK circuit.
The negative electrode of the second diode D2 connects the anode of input voltage vin, and anode also connects an end of first inductance L 1, and the other end of first inductance L 1 connects the negative terminal of output voltage V o, parallelly connected second capacitor C 2 between the anode of output voltage V o and the negative terminal.
Referring to Fig. 8, this figure is another application circuit of circuit provided by the invention.
The switching tube that present embodiment provides is to be applied to the BOOST circuit.
As shown in Figure 8, in the empty frame circuit that device withstand voltage is provided provided by the invention, its integral body is used as a switching tube, and the drain electrode of last NMOS pipe Q2 connects the anode of second diode in the BUCK circuit.
The anode of the second diode D2 is through the anode of first inductance L, 1 connection input voltage vin, and negative electrode connects the anode of output voltage V o.
Parallelly connected second capacitor C 2 between the anode of output voltage V o and the negative terminal.
Need to prove; Below only be the typical application circuit figure of switching tube, it is understandable that the high voltage bearing switching tube that using the embodiment of the invention provides does not limit to and is applied to this several kinds of occasions; The occasion of using at other switching tubes is suitable for too, introduces for example no longer one by one at this.
Below only be to be the application scenario that example is introduced, it is understandable that Application of I GBT pipe also can be accomplished identical functions, therefore, repeats no more at this with the NMOS pipe.
The switching tube that the embodiment of the invention provides, thus two switching tube series connection are improved voltage endurance capability, and circuit structure is simple, and power consumption is little.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (10)
1. a circuit that improves device withstand voltage is characterized in that, comprising: first electric capacity, first voltage-stabiliser tube, first diode, last NMOS pipe and following NMOS pipe;
The grid of last NMOS pipe connects the negative electrode of first diode, and the anode of first diode connects power supply;
Connect first electric capacity between the ground of power supply;
The grid of last NMOS pipe is through the first voltage-stabiliser tube ground connection;
The source electrode of last NMOS pipe connects the drain electrode of NMOS pipe down, the source ground of following NMOS pipe, and the grid of following NMOS pipe connects the PWM drive signal.
2. circuit according to claim 1 is characterized in that, also comprises the grid that is parallel to NMOS pipe and second voltage-stabiliser tube between the source electrode.
3. circuit according to claim 1 and 2 is characterized in that, said circuit is as the switching tube that is connected with former limit winding in the circuit of reversed excitation.
4. circuit according to claim 1 and 2 is characterized in that, said circuit is as the switching tube in the BUCK circuit, and the drain electrode of last NMOS pipe connects the anode of the diode in the BUCK circuit.
5. circuit according to claim 1 and 2 is characterized in that, said circuit is as the switching tube in the BOOST circuit, and the drain electrode of last NMOS pipe connects the anode of the diode in the BOOST circuit.
6. a circuit that improves device withstand voltage is characterized in that, comprising: first electric capacity, first voltage-stabiliser tube, first diode, last IGBT pipe and following IGBT pipe;
The gate pole of last IGBT pipe connects the negative electrode of first diode, and the anode of first diode connects power supply;
Connect first electric capacity between the ground of power supply;
The gate pole of last IGBT pipe is through the first voltage-stabiliser tube ground connection;
The emitter of last IGBT pipe connects the collector electrode of IGBT pipe down, the grounded emitter of following IGBT pipe, and the gate pole of following IGBT pipe connects the PWM drive signal.
7. circuit according to claim 6 is characterized in that, also comprises the gate pole that is parallel to IGBT pipe and second voltage-stabiliser tube between the emitter.
8. according to claim 6 or 7 described circuit, it is characterized in that said circuit is as the switching tube that is connected with former limit winding in the circuit of reversed excitation.
9. according to claim 6 or 7 described circuit, it is characterized in that said circuit is as the switching tube in the BUCK circuit, the collector electrode of last IGBT pipe connects the anode of the diode in the BUCK circuit.
10. according to claim 6 or 7 described circuit, it is characterized in that said circuit is as the switching tube in the BOOST circuit, the collector electrode of last IGBT pipe connects the anode of the diode in the BOOST circuit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102226019A CN102315758A (en) | 2010-07-07 | 2010-07-07 | Circuit for improving voltage resistance of device |
| PCT/CN2010/078657 WO2012003685A1 (en) | 2010-07-07 | 2010-11-12 | Circuit for improving voltage-resistance of devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102226019A CN102315758A (en) | 2010-07-07 | 2010-07-07 | Circuit for improving voltage resistance of device |
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|---|---|
| CN102315758A true CN102315758A (en) | 2012-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102226019A Pending CN102315758A (en) | 2010-07-07 | 2010-07-07 | Circuit for improving voltage resistance of device |
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| CN (1) | CN102315758A (en) |
| WO (1) | WO2012003685A1 (en) |
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| CN102594103A (en) * | 2012-03-20 | 2012-07-18 | 思源清能电气电子有限公司 | High-voltage input fly-back topology-based series-wound field effect tube driving circuit |
| CN102892239A (en) * | 2012-10-31 | 2013-01-23 | 杭州士兰微电子股份有限公司 | Flyback constant-current driving circuit and flyback constant-current driving control system containing flyback constant-current driving circuit |
| CN103795243A (en) * | 2014-01-17 | 2014-05-14 | 无锡市金赛德电子有限公司 | Double-tube series-connection booster circuit |
| CN104092383A (en) * | 2014-07-01 | 2014-10-08 | 浙江海得新能源有限公司 | High-voltage input auxiliary power supply circuit and working method thereof |
| CN109314472A (en) * | 2016-06-10 | 2019-02-05 | Ntn株式会社 | Device for improving power factor |
| WO2020012583A1 (en) * | 2018-07-11 | 2020-01-16 | 株式会社日立産機システム | Switching power supply circuit and power conversion device including same |
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| US8653881B2 (en) | 2012-01-31 | 2014-02-18 | Infineon Technologies Austria Ag | Half bridge flyback and forward |
| CN104682696B (en) * | 2012-11-05 | 2019-07-16 | 矽力杰半导体技术(杭州)有限公司 | A kind of self-powered source electrode drive circuit and the Switching Power Supply using it |
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2010
- 2010-07-07 CN CN2010102226019A patent/CN102315758A/en active Pending
- 2010-11-12 WO PCT/CN2010/078657 patent/WO2012003685A1/en active Application Filing
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| RU2236745C1 (en) * | 2003-02-26 | 2004-09-20 | Федеральное Государственное Унитарное Предприятие "Нижегородский Научно-Исследовательский Институт Радиотехники" | Emitter-controlled transistor switch |
| US7596004B2 (en) * | 2006-09-29 | 2009-09-29 | Schneider Toshiba Inverter Europe Sas | Switched-mode power supply system and speed variator comprising such a system |
| CN201509153U (en) * | 2009-08-14 | 2010-06-16 | 上海鹰泰德创电器电子有限公司 | Switching power supply |
| CN201766489U (en) * | 2010-07-07 | 2011-03-16 | 英飞特电子（杭州）有限公司 | Circuit for enhancing voltage endurance of component |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102594103A (en) * | 2012-03-20 | 2012-07-18 | 思源清能电气电子有限公司 | High-voltage input fly-back topology-based series-wound field effect tube driving circuit |
| CN102892239A (en) * | 2012-10-31 | 2013-01-23 | 杭州士兰微电子股份有限公司 | Flyback constant-current driving circuit and flyback constant-current driving control system containing flyback constant-current driving circuit |
| CN102892239B (en) * | 2012-10-31 | 2014-11-26 | 杭州士兰微电子股份有限公司 | Flyback constant-current driving circuit and flyback constant-current driving control system containing flyback constant-current driving circuit |
| CN103795243A (en) * | 2014-01-17 | 2014-05-14 | 无锡市金赛德电子有限公司 | Double-tube series-connection booster circuit |
| CN104092383A (en) * | 2014-07-01 | 2014-10-08 | 浙江海得新能源有限公司 | High-voltage input auxiliary power supply circuit and working method thereof |
| CN109314472A (en) * | 2016-06-10 | 2019-02-05 | Ntn株式会社 | Device for improving power factor |
| CN109314472B (en) * | 2016-06-10 | 2021-10-26 | Ntn株式会社 | Power factor improving device |
| WO2020012583A1 (en) * | 2018-07-11 | 2020-01-16 | 株式会社日立産機システム | Switching power supply circuit and power conversion device including same |
| JPWO2020012583A1 (en) * | 2018-07-11 | 2021-06-24 | 株式会社日立産機システム | Switching power supply circuit and power converter equipped with it |
| JP7122379B2 (en) | 2018-07-11 | 2022-08-19 | 株式会社日立産機システム | SWITCHING POWER SUPPLY CIRCUIT AND POWER CONVERSION DEVICE INCLUDING THE SAME |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012003685A1 (en) | 2012-01-12 |
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Address after: Hangzhou City, Zhejiang province 310053 Binjiang District Dongxin Road No. 66 East communication B block 309 Applicant after: LED One (Hangzhou) Co.,Ltd. Address before: Hangzhou City, Zhejiang province 310053 Binjiang District Dongxin Road No. 66 East communication B block 309 Applicant before: Inventronics (Hangzhou) Co., Ltd. |
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Application publication date: 20120111 |