CN102313866B - Two-step scanning test method for minimum output voltage drop - Google Patents
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Abstract
Description
技术领域 technical field
本发明涉及半导体成品特性参数的测试方法，特别是涉及一种最小输出压降的二分步扫描测试方法。 The invention relates to a test method for characteristic parameters of semiconductor finished products, in particular to a two-step scan test method for minimum output voltage drop.
背景技术 Background technique
现有技术中，半导体封装后进行成品测试时，某些参数（例如：LDO最小输出压降Vdrop，所谓最小输出压降为产品输出电压为产品实际输出电压的98%时，输入电压Ｖin与输出电压Vout的压差），由于其是无法直接通过量取产品输出获得，因此，为获取产品的这些参数，现有技术常采用从高到低或者从低到高的直线扫描方式，通过观测产品的状态变化，以获得这些参数。 In the prior art, when the finished product is tested after semiconductor packaging, some parameters (such as: LDO minimum output voltage drop Vdrop, the so-called minimum output voltage drop is when the product output voltage is 98% of the actual output voltage of the product, the input voltage Vin and the output voltage Vout), because it cannot be directly obtained by measuring the output of the product, therefore, in order to obtain these parameters of the product, the existing technology often adopts a linear scanning method from high to low or from low to high, by observing the product state changes to obtain these parameters.
例如：采用直线扫描方式测试LDO最小输出压降Vdrop时，所需的测试时间为T1＝（Vdrop典型值/步长）*读值等待时间，设半导体产品的实际输出电压为1.25Ｖ，Vdrop典型值为0.6Ｖ，那么输入电压Ｖin至少需要从1.25V*0.98的状态触发点开始以固定步长往上扫描，选取固定步长为1mV，此时，上述通过直线扫描的方式进行测试的时间为：T3＝0.6V(Vdrop典型值)/1mV（步长）*0.1mS（读值等待时间）=60mS。 For example: when using the linear scan method to test the minimum output voltage drop Vdrop of the LDO, the required test time is T1 = (Vdrop typical value / step size) * reading waiting time, assuming that the actual output voltage of the semiconductor product is 1.25V, Vdrop typical If the value is 0.6V, then the input voltage Vin needs to scan up at least from the state trigger point of 1.25V*0.98 with a fixed step size, and select a fixed step size of 1mV. At this time, the time for the above-mentioned linear scan method to test is : T3＝0.6V (typical value of Vdrop)/1mV (step size)*0.1mS (reading waiting time)=60mS.
如果对半导体成品的输出电压的精度要求越高，则所需的扫描步长则越小，扫描时间花费则越长，进而测试时间也会增加，产出则变的较低，上述采用直线扫描方式进行测试不利于工业化大批量的半导体成品的测试。 If the accuracy of the output voltage of semiconductor products is higher, the required scan step size will be smaller, the scan time will be longer, and the test time will increase, and the output will become lower. The above-mentioned linear scan Testing in this way is not conducive to the testing of industrialized large-scale semiconductor finished products.
因此，为解决上述问题，亟需提供一种在保证测试精度的情况下，能够缩短测试时间、提升产出，同时显著降低了产品测试环节成本的最小输出压降的二分步扫描测试方法。 Therefore, in order to solve the above problems, it is urgent to provide a two-step scanning test method with the minimum output voltage drop that can shorten the test time, increase the output, and significantly reduce the cost of the product test process while ensuring the test accuracy.
发明内容 Contents of the invention
本发明的目的在于避免现有技术中的不足之处而提供一种在保证测试精度的情况下，能够缩短测试时间、提升产出，同时显著降低了产品测试环节成本的最小输出压降的二分步扫描测试方法。 The purpose of the present invention is to avoid the deficiencies in the prior art and to provide a minimum output pressure drop secondary method that can shorten the test time, improve the output, and significantly reduce the cost of the product test link while ensuring the test accuracy. Step-by-step scan test method.
本发明的目的通过以下技术方案实现： The object of the present invention is achieved through the following technical solutions:
提供一种最小输出压降的二分步扫描测试方法，包括有以下步骤： A two-step scan test method for minimum output voltage drop is provided, including the following steps:
步骤一，以第一步长在半导体产品参数范围内进行初步扫描，寻找状态触发点的输出电压A；其中，所述状态触发点的输出电压A为半导体产品实际输出电压的98％； Step 1: Carry out a preliminary scan within the parameter range of the semiconductor product with the first step to find the output voltage A of the state trigger point; wherein, the output voltage A of the state trigger point is 98% of the actual output voltage of the semiconductor product;
步骤二，将半导体产品参数范围锁定在以Ａ±（N*第一步长）的小区间内；其中，N为测试安全系数； Step 2, lock the parameter range of semiconductor products within the small interval of A±(N*the length of the first step); where, N is the test safety factor;
步骤三，以第二步长在所述步骤二中锁定的小区间内，依次开始扫描，获得所需的半导体产品的最小输出压降，完成扫描。 Step 3: Start scanning sequentially within the cells locked in Step 2 with the second step length to obtain the required minimum output voltage drop of the semiconductor product, and complete the scanning.
其中，所述步骤三进一步包括，从Ａ-（N*第一步长）开始由低到高依次开始扫描。 Wherein, the step three further includes, starting from A-(N*first step length) and starting scanning from low to high.
其中，所述步骤三进一步包括，从Ａ+（N*第一步长）开始由高到低依次开始扫描。 Wherein, the step 3 further includes, starting from A+(N*the first step length) and starting to scan sequentially from high to low.
其中，所述步骤一中的第一步长为设定的半导体产品输出电压精度的5倍。 Wherein, the length of the first step in the first step is 5 times of the set output voltage precision of the semiconductor product.
其中，所述步骤三中的第二步长为设定的半导体产品输出电压精度的1/2。 Wherein, the second step size in the third step is 1/2 of the set precision of the output voltage of the semiconductor product.
其中，所述设定的半导体产品输出电压精度为2mv。 Wherein, the output voltage accuracy of the semiconductor product set is 2mv.
其中，所述第一步长为10mv，所述第二步长为1mv。 Wherein, the first step size is 10mv, and the second step size is 1mv.
其中，所述设定的半导体产品输出电压精度为1mv。 Wherein, the output voltage accuracy of the semiconductor product set is 1mv.
其中，所述第一步长为5mv，所述第二步长为0.5mv。 Wherein, the first step size is 5mv, and the second step size is 0.5mv.
其中，N为2。 Wherein, N is 2.
本发明的有益效果： Beneficial effects of the present invention:
本发明的最小输出压降的二分步扫描测试方法，包括有以下步骤：步骤一，以第一步长在半导体产品参数范围内进行初步扫描，寻找状态触发点的输出电压A；其中，所述状态触发点的输出电压A为半导体产品实际输出电压的98％；步骤二，将半导体产品参数范围锁定在以Ａ±（N*第一步长）的小区间内；其中，N为测试安全系数；步骤三，以第二步长在所述步骤二中锁定的小区间内，依次开始扫描，获得所需的半导体产品的最小输出压降，完成扫描。与现有技术的直线扫描相比，半导体产品的最小输出压降Vdrop项的测试时间由直线扫描的60mS缩短至8mS,由于减少了测试时间的花费，使得测试产出得到提升，同时还显著降低了产品测试环节的成本。 The two-step scanning test method of the minimum output voltage drop of the present invention includes the following steps: step 1, conduct a preliminary scan within the parameter range of the semiconductor product with the first step, and find the output voltage A of the state trigger point; wherein, the The output voltage A of the trigger point of the above state is 98% of the actual output voltage of the semiconductor product; step 2, lock the parameter range of the semiconductor product within the small interval of A±(N*the length of the first step); where N is the test safety Coefficient; step 3, start scanning sequentially within the cell locked in the step 2 with the second step length, obtain the required minimum output voltage drop of the semiconductor product, and complete the scanning. Compared with the linear scan of the prior art, the test time of the minimum output voltage drop Vdrop item of the semiconductor product is shortened from 60mS of the linear scan to 8mS. Due to the reduction of the cost of the test time, the test output is improved, and at the same time it is significantly reduced. cost of product testing.
附图说明 Description of drawings
利用附图对发明作进一步说明，但附图中的实施例不构成对本发明的任何限制，对于本领域的普通技术人员，在不付出创造性劳动的前提下，还可以根据以下附图获得其它的附图。 Utilize accompanying drawing to further illustrate the invention, but the embodiment in the accompanying drawing does not constitute any limitation to the present invention, for those of ordinary skill in the art, under the premise of not paying creative work, can also obtain other according to following accompanying drawing Attached picture.
图1是本发明的最小输出压降的二分步扫描测试方法的测试时间比对图。 FIG. 1 is a test time comparison chart of the two-step scan test method for the minimum output voltage drop of the present invention.
在图1中包括有：1——直线扫描时间曲线、2——二分步扫描时间曲线、T1——第一扫描时间、T2——第二扫描时间、T3——直线扫描时间。 In Fig. 1 there are: 1—straight line scan time curve, 2—two-step scan time curve, T1—first scan time, T2—second scan time, T3—straight line scan time.
具体实施方式 Detailed ways
结合以下实施例对本发明作进一步描述。 The present invention is further described in conjunction with the following examples.
实施例1Example 1
本发明的最小输出压降的二分步扫描测试方法的具体实施方式之一，包括有以下步骤： One of the specific implementations of the two-step scanning test method of the minimum output voltage drop of the present invention includes the following steps:
步骤一，以第一步长在半导体产品参数范围内进行初步扫描，寻找状态触发点的输出电压A；其中，状态触发点的输出电压A为半导体产品实际输出电压的98％。初步扫描的的目的是寻找状态触发点，以便锁定一个较小的区间供细致扫描使用，因此，第一步长可以选取的较大些，使得测试扫描阶段花费的时间大为节省。步骤一中的扫描花费的第一扫描时间T1为（Vdrop典型值/第一步长）*读值等待时间。 Step 1: Perform a preliminary scan within the parameter range of the semiconductor product with the first step to find the output voltage A of the state trigger point; wherein, the output voltage A of the state trigger point is 98% of the actual output voltage of the semiconductor product. The purpose of the preliminary scan is to find the state trigger point in order to lock a smaller interval for the detailed scan. Therefore, the length of the first step can be selected to be larger, which greatly saves the time spent in the test scan phase. The first scan time T1 spent by the scan in step 1 is (typical value of Vdrop/length of the first step)*reading waiting time.
步骤二，将半导体产品参数范围锁定在以Ａ±（N*第一步长）的小区间内；其中，N为测试安全系数。 Step 2, lock the parameter range of the semiconductor product within the small interval of A±(N*the length of the first step); where, N is the test safety factor.
步骤三，以第二步长在步骤二中锁定的小区间内，依次开始扫描，获得所需的半导体产品的最小输出压降，完成扫描。 Step 3: Start scanning sequentially within the cells locked in Step 2 with the second step length, obtain the required minimum output voltage drop of the semiconductor product, and complete the scanning.
步骤二中的扫描花费的第二扫描时T2为（N*第一步长/第二步长）*读值等待时间。其中，第二步长可以采用与直线扫描同等步长进行扫描，其扫描得出的精度结果与直线扫描一致，故整个测试精度要求将不会影响，但测试时间花费方面，则会因初步扫描使用较大步长扫描的原因，而得到缩减。 The second scanning time T2 spent by the scanning in step 2 is (N*first step size/second step size)*reading waiting time. Among them, the second step length can be scanned with the same step length as the linear scan, and the accuracy result obtained by the scanning is consistent with the linear scan, so the entire test accuracy requirement will not be affected, but the test time cost will be due to the initial scan The reason for scanning with a larger step size is reduced.
从图1中的直线扫描时间曲线和二分步扫描时间曲线可知，与现有技术的直线扫描相比，半导体产品的最小输出压降Vdrop项的测试时间缩短,由于减少了测试时间的花费，使得测试产出得到提升，同时还显著降低了产品测试环节的成本。 As can be seen from the linear scan time curve and the two-step scan time curve in Fig. 1, compared with the linear scan of the prior art, the test time of the minimum output voltage drop Vdrop item of the semiconductor product is shortened, because the cost of the test time is reduced, The test output is improved, and the cost of product testing is also significantly reduced.
具体的，步骤一中的第一步长为设定的半导体产品输出电压精度的5倍。 Specifically, the length of the first step in the first step is 5 times of the set output voltage accuracy of the semiconductor product.
具体的，步骤三中的第二步长为设定的半导体产品输出电压精度的1/2。 Specifically, the second step size in step three is 1/2 of the set output voltage accuracy of the semiconductor product.
具体的，N选取为2。为防止边缘值问题，故设２个扫描步长保证测试的安全性，防止漏扫，此外，N还可以选取2.5、3或者其它的数值。 Specifically, N is selected as 2. In order to prevent edge value problems, 2 scan steps are set to ensure the safety of the test and prevent missed scans. In addition, N can also choose 2.5, 3 or other values.
实施例2Example 2
本发明的最小输出压降的二分步扫描测试方法的具体实施方式之二，本实施例的主要技术方案与实施例1相同，在本实施例中未解释的特征，采用实施例1中的解释，在此不再进行赘述。本实施例与实施例1的区别在于，步骤三进一步包括，从Ａ-（N*第一步长）开始由低到高依次开始扫描。 The second specific embodiment of the two-step scanning test method of the minimum output voltage drop of the present invention, the main technical solution of this embodiment is the same as that of embodiment 1, and the features not explained in this embodiment are adopted in embodiment 1 explanation, and will not repeat them here. The difference between this embodiment and Embodiment 1 is that Step 3 further includes starting from A-(N*first step length) and starting scanning from low to high.
实施例3Example 3
本发明的最小输出压降的二分步扫描测试方法的具体实施方式之三，本实施例的主要技术方案与实施例1相同，在本实施例中未解释的特征，采用实施例1中的解释，在此不再进行赘述。本实施例与实施例1的区别在于，步骤三进一步包括，从Ａ+（N*第一步长）开始由高到低依次开始扫描。 The third specific embodiment of the two-step scanning test method of the minimum output voltage drop of the present invention, the main technical solution of this embodiment is the same as that of embodiment 1, and the features not explained in this embodiment are adopted in embodiment 1 explanation, and will not repeat them here. The difference between this embodiment and Embodiment 1 is that Step 3 further includes starting from A+(N*first step length) to start scanning in order from high to low.
实施例4Example 4
本发明的最小输出压降的二分步扫描测试方法的具体实施方式之四，本实施例的主要技术方案与实施例1相同，在本实施例中未解释的特征，采用实施例1中的解释，在此不再进行赘述。本实施例与实施例1的区别在于，选取设定的半导体产品输出电压精度为2mv，则第一步长为10mv，第二步长为1mv。较为常用。 The fourth specific embodiment of the two-step scanning test method of the minimum output voltage drop of the present invention, the main technical solution of this embodiment is the same as that of embodiment 1, and the features not explained in this embodiment are adopted in embodiment 1 explanation, and will not repeat them here. The difference between this embodiment and Embodiment 1 is that the output voltage accuracy of the selected semiconductor product is 2mv, the first step length is 10mv, and the second step length is 1mv. More commonly used.
选取Vdrop典型值为0.6Ｖ进行计算，采用二分步扫描测试方法的总测试时间包括T1＝0.6V(Vdrop典型值)/10mV（步长）*0.1mS（读值等待时间）=6mS；T2＝0.02V(小区间范围)/1mV（步长）*0.1mS（读值等待时间）=2mS，则总测试时间为Ｔ＝T1+T2=8mS。 The typical value of Vdrop is selected as 0.6V for calculation, and the total test time using the two-step scanning test method includes T1=0.6V (Vdrop typical value)/10mV (step size)*0.1mS (reading value waiting time)=6mS; T2 =0.02V (inter-cell range)/1mV (step size)*0.1mS (reading waiting time)=2mS, then the total test time is T=T1+T2=8mS.
实施例5Example 5
本发明的最小输出压降的二分步扫描测试方法的具体实施方式之五，本实施例的主要技术方案与实施例2相同，在本实施例中未解释的特征，采用实施例2中的解释，在此不再进行赘述。本实施例与实施例2的区别在于，选取设定的半导体产品输出电压精度为2mv，则第一步长为10mv，第二步长为1mv。较为常用。 The fifth specific embodiment of the two-step scan test method of the minimum output voltage drop of the present invention, the main technical solution of this embodiment is the same as that of embodiment 2, and the features not explained in this embodiment are adopted in embodiment 2 explanation, and will not repeat them here. The difference between this embodiment and Embodiment 2 is that the output voltage accuracy of the selected semiconductor product is 2mv, the first step length is 10mv, and the second step length is 1mv. More commonly used.
选取Vdrop典型值为0.6Ｖ进行计算，采用二分步扫描测试方法的总测试时间包括T1＝0.6V(Vdrop典型值)/10mV（步长）*0.1mS（读值等待时间）=6mS；T2＝0.02V(小区间范围)/1mV（步长）*0.1mS（读值等待时间）=2mS，则总测试时间为Ｔ＝T1+T2=8mS。 The typical value of Vdrop is selected as 0.6V for calculation, and the total test time using the two-step scanning test method includes T1=0.6V (Vdrop typical value)/10mV (step size)*0.1mS (reading value waiting time)=6mS; T2 =0.02V (inter-cell range)/1mV (step size)*0.1mS (reading waiting time)=2mS, then the total test time is T=T1+T2=8mS.
实施例6Example 6
本发明的最小输出压降的二分步扫描测试方法的具体实施方式之六，本实施例的主要技术方案与实施例3相同，在本实施例中未解释的特征，采用实施例3中的解释，在此不再进行赘述。本实施例与实施例3的区别在于，选取设定的半导体产品输出电压精度为2mv，则第一步长为10mv，第二步长为1mv。较为常用。 The sixth specific implementation method of the two-step scanning test method of the minimum output voltage drop of the present invention, the main technical solution of this embodiment is the same as that of embodiment 3, and the features not explained in this embodiment are adopted in embodiment 3 explanation, and will not repeat them here. The difference between this embodiment and Embodiment 3 is that the output voltage accuracy of the selected semiconductor product is 2mv, the first step length is 10mv, and the second step length is 1mv. More commonly used.
选取Vdrop典型值为0.6Ｖ进行计算，采用二分步扫描测试方法的总测试时间包括T1＝0.6V(Vdrop典型值)/10mV（步长）*0.1mS（读值等待时间）=6mS；T2＝0.02V(小区间范围)/1mV（步长）*0.1mS（读值等待时间）=2mS，则总测试时间为Ｔ＝T1+T2=8mS。 The typical value of Vdrop is selected as 0.6V for calculation, and the total test time using the two-step scanning test method includes T1=0.6V (Vdrop typical value)/10mV (step size)*0.1mS (reading value waiting time)=6mS; T2 =0.02V (inter-cell range)/1mV (step size)*0.1mS (reading waiting time)=2mS, then the total test time is T=T1+T2=8mS.
实施例7Example 7
本发明的最小输出压降的二分步扫描测试方法的具体实施方式之七，本实施例的主要技术方案与实施例1相同，在本实施例中未解释的特征，采用实施例1中的解释，在此不再进行赘述。本实施例与实施例1的区别在于，设定的半导体产品输出电压精度为1mv，第一步长为5mv，第二步长为0.5mv。 The seventh specific implementation of the two-step scanning test method of the minimum output voltage drop of the present invention, the main technical solution of this embodiment is the same as that of embodiment 1, and the features not explained in this embodiment are adopted in embodiment 1 explanation, and will not repeat them here. The difference between this embodiment and Embodiment 1 is that the precision of the output voltage of the semiconductor product is set to 1mv, the first step is 5mv, and the second step is 0.5mv.
实施例8Example 8
本发明的最小输出压降的二分步扫描测试方法的具体实施方式之八，本实施例的主要技术方案与实施例2相同，在本实施例中未解释的特征，采用实施例2中的解释，在此不再进行赘述。本实施例与实施例2的区别在于，设定的半导体产品输出电压精度为1mv，第一步长为5mv，第二步长为0.5mv。 The eighth specific embodiment of the two-step scanning test method of the minimum output voltage drop of the present invention, the main technical solution of this embodiment is the same as that of embodiment 2, and the features not explained in this embodiment are adopted in embodiment 2 explanation, and will not repeat them here. The difference between this embodiment and Embodiment 2 is that the precision of the output voltage of the semiconductor product is set to 1mv, the first step is 5mv, and the second step is 0.5mv.
实施例9Example 9
本发明的最小输出压降的二分步扫描测试方法的具体实施方式之九，本实施例的主要技术方案与实施例3相同，在本实施例中未解释的特征，采用实施例3中的解释，在此不再进行赘述。本实施例与实施例3的区别在于，设定的半导体产品输出电压精度为1mv，第一步长为5mv，第二步长为0.5mv。 Ninth of the specific implementation manner of the two-step scan test method of the minimum output voltage drop of the present invention, the main technical solution of this embodiment is the same as that of embodiment 3, and the features not explained in this embodiment are adopted in embodiment 3 explanation, and will not repeat them here. The difference between this embodiment and Embodiment 3 is that the precision of the output voltage of the semiconductor product is set to 1mv, the first step is 5mv, and the second step is 0.5mv.
最后应当说明的是，以上实施例仅用以说明本发明的技术方案，而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细地说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。 Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting the protection scope of the present invention, although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand , the technical solution of the present invention may be modified or equivalently replaced without departing from the spirit and scope of the technical solution of the present invention.
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| CN103105570B (en) * | 2013-01-23 | 2016-09-07 | 无锡华润上华科技有限公司 | The method of testing of a kind of cut-in voltage and system |
| CN103995222B (en) * | 2013-02-20 | 2017-02-01 | 无锡华润上华科技有限公司 | Turn-on voltage testing method of switching tube |
| CN104007332B (en) * | 2013-02-22 | 2017-07-11 | 无锡华润上华科技有限公司 | The substrate leakage method of testing of switching tube |
| CN105044495B (en) * | 2015-06-30 | 2018-02-16 | 株洲南车时代电气股份有限公司 | A kind of method of quick test protection threshold value |
| CN109270425A (en) * | 2018-11-02 | 2019-01-25 | 上海华力微电子有限公司 | A kind of scan testing methods |
| CN116008770B (en) * | 2023-03-28 | 2023-07-21 | 合肥新晶集成电路有限公司 | Scan test method, scan test device, and computer-readable storage medium |
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