CN102306693A - Graphical nitride-based luminescent epitaxial wafer and luminescent chip, and manufacturing methods thereof - Google Patents
Graphical nitride-based luminescent epitaxial wafer and luminescent chip, and manufacturing methods thereof Download PDFInfo
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- CN102306693A CN102306693A CN201110293138A CN201110293138A CN102306693A CN 102306693 A CN102306693 A CN 102306693A CN 201110293138 A CN201110293138 A CN 201110293138A CN 201110293138 A CN201110293138 A CN 201110293138A CN 102306693 A CN102306693 A CN 102306693A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 150000004767 nitrides Chemical class 0.000 title abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 238000001039 wet etching Methods 0.000 claims abstract description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 120
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 98
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- 238000004020 luminiscence type Methods 0.000 claims description 11
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000007788 roughening Methods 0.000 abstract 4
- 230000000877 morphologic effect Effects 0.000 abstract 2
- 238000000605 extraction Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
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- 239000004038 photonic crystal Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses a graphical nitride-based luminescent epitaxial wafer and a manufacturing method thereof as well as a graphical nitride-based luminescent chip and a manufacturing method thereof. According to the invention, on the basis of two epitaxial growth and integration of a graphical technology and a nitrogen polar surface roughening technology, a graphical roughening epitaxial layer zone in an inverted hexagonal pyramid shape is placed into an internal structure of an ordinary nitride-based light-emitting diode chip. A primary epitaxial growth coarsenable layer is used as a roughening medium; according to a channel that is in the chip, wet etching is carried out to make a marginal portion of the coarsenable layer be etched into an inverted hexagonal pyramid-shaped morphological zone, wherein the marginal portion is closed to the channel, so that a graphical roughening layer is formed; and then a graphical luminescent epitaxial wafer is formed by a secondary epitaxial growth luminescent layer and an electrode is manufactured to form a graphical luminescent chip. According to the graphical luminescent epitaxial wafer and the luminescent chip provided in the invention, a plurality of inverted hexagonal pyramid-shaped morphological zones are formed in the luminescent epitaxial wafer and the luminescent chip, so that a light extraction efficiency is further improved on the basis of a graphical technology.
Description
Technical field
The present invention relates to a kind of luminous epitaxial wafer and luminescence chip, with and preparation method thereof, more particularly, relate to a kind of graphical gallium nitride base light emitting epitaxial wafer and luminescence chip and preparation method thereof.
Background technology
In recent years, along with semiconductor lighting is popularized gradually, the technical development of gallium nitride (GaN) based light-emitting diode is rapid.In order to improve the luminous efficiency of gallium nitride light-emitting diode, the crystal mass that will improve luminescent material on the one hand then will be got optical efficiency with lifting through the improvement of chip structure and packaging technology on the other hand to improve internal quantum efficiency.In order to promote the optical efficiency of getting of chip; Surface (interface) alligatoring or veining technology are one of simple and effective ways comparatively, have been widely adopted and have obtained positive effect such as patterned substrate, epitaxial surface alligatoring, transparency conducting layer alligatoring, photonic crystal etc. to the coarsening technique of exiting surface or substrate.
In the veining technology of various surfaces (interface), patterned substrate and nitrogen polar surface alligatoring are got light effect because of it and obviously are used widely.The patterned substrate technology can improve crystal mass simultaneously and get optical efficiency, is the main flow manufacturing technology of present conventional gallium nitride LED chip.Can obtain hexagonal awl (pyramid) alligatoring pattern in submicron order cycle to the crystal orientation selectivity alligatoring of nitrogen polar surface gallium nitride; Thereby has a high optical efficiency of getting; But it is used on the film gallium nitride based LED chip structure based on substrate desquamation usually; Conventional gallium nitride based LED chip is a gallium polarity because of aufwuchsplate, so difficult to obtain.
Document 1 (L-C Chang; C-H Kuo; C-W Kuo; Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure; Solid-State Electronics 56 (2011) 8 – 12) reported that the n-GaN layer that adopts high temperature sulfuric acid and phosphoric acid corrosion Cutting Road sidewall edge forms the roughed interface of the awl of falling the hexagonal (pyramid) shape, can obtain 27% brightness lifting through optimal conditions.Document 1 forms Cutting Road through the positive scribing of laser; Cutting Road provides the lateral etches passage; The n-GaN layer that has a common boundary with Sapphire Substrate on high temperature phosphoric acid and the sulfuric acid etchant Cutting Road extension sidewall; And the lower surface of this n-GaN layer is nitrogen polarity, thereby forms one around the unsettled hexagonal pyramidal looks band of the reversal of the natural order of things at edge, chip cutting road.
Yet; The technology that adopts document 1 to be proposed can only realize the epitaxial loayer awl of falling the hexagonal alligatoring at edge, formal dress chip cutting road; It is limited that the amplitude of optical efficiency is got in its increase, if can increase the epitaxial loayer zone of the awl of falling hexagonal alligatoring, the light of getting that then can obtain by a larger margin promotes.
Summary of the invention
The object of the invention promptly is to improve the above-mentioned limitation of prior art, nitrogen polarity coarsening technique and patterned substrate technology is combined, with the luminous efficiency of further raising formal dress gallium nitride based light emitting diode.
Technical scheme of the present invention is:
A kind of graphical gallium nitride base light emitting epitaxial wafer, its structure comprises:
Substrate;
Graphical roughened layer is formed on the substrate; It comprises a plurality of raceway grooves and a plurality of gallium nitride layer block; Each gallium nitride layer block is isolated through raceway groove each other, and the lower surface of the fringe region of the close raceway groove of each gallium nitride layer block is for hanging hexagonal taper alligatoring pattern by the feet;
The gallium nitride base light emitting epitaxial loayer is formed on the graphical roughened layer, and fills and leads up all raceway grooves.
A kind of graphical gallium nitride base light emitting chip, its structure comprises:
Substrate;
Graphical roughened layer is formed on the substrate; It comprises a plurality of raceway grooves and a plurality of gallium nitride layers district; Each gallium nitride layer block is isolated through raceway groove each other, and the lower surface of the fringe region of the close raceway groove of each gallium nitride layer block is for hanging hexagonal taper alligatoring pattern by the feet;
The gallium nitride base light emitting epitaxial loayer is formed on the graphical roughened layer and fills and leads up all raceway grooves, and the gallium nitride base light emitting epitaxial loayer comprises n type gallium nitride-based epitaxial layer, active layer and p type gallium nitride-based epitaxial layer successively;
The p electrode is formed on the p type gallium nitride-based epitaxial layer;
The n electrode is formed on the n type gallium nitride-based epitaxial layer.
A kind of manufacture method of graphical gallium nitride base light emitting epitaxial wafer comprises step:
One substrate is provided;
But growth one roughened layer on substrate, its material is a gallium nitride, and its lower surface is nitrogen polarity;
But but graphical roughened layer of definition and the subregional roughened layer of etched part to exposing substrate, but to form the roughened layer block and the raceway groove of a plurality of mutual isolation;
But adopt the wet method mode to be etched into the taper of falling the hexagonal near the fringe region lower surface of the roughened layer block of lateral etch raceway groove;
But the luminous epitaxial loayer of continued growth on roughened layer, and luminous epitaxial loayer laterally fills and leads up raceway groove, forms graphical gallium nitride base light emitting epitaxial wafer.
A kind of manufacture method of graphical gallium nitride base light emitting chip, making step is following:
One substrate is provided;
But growth one roughened layer on substrate, its material is a gallium nitride, and its lower surface is nitrogen polarity;
But but graphical roughened layer of definition and the subregional roughened layer of etched part to exposing substrate, but to form the roughened layer block and the raceway groove of a plurality of mutual isolation;
But adopt the wet method mode to be etched into the taper of falling the hexagonal near the fringe region lower surface of the roughened layer block of raceway groove;
But the luminous epitaxial loayer of continued growth on roughened layer, and luminous epitaxial loayer is is laterally filled and led up raceway groove;
On luminous epitaxial loayer, make p, n electrode respectively to form graphical gallium nitride base light emitting chip.
Innovation part of the present invention is through twice epitaxial growth, and pattern technology and nitrogen polar surface coarsening technique are integrated, and in conventional gallium nitride LED chip internal structure, inserts the patterned awl of falling hexagonal alligatoring epitaxial loayer band.But an epitaxial growth roughened layer is as the alligatoring medium; Through being positioned at the raceway groove of chip internal; But wet etching can be etched into the taper of falling hexagonal pattern band with the roughened layer marginal portion near raceway groove; Thereby form graphical roughened layer, and then form graphical luminous epitaxial wafer and make electrode through the secondary epitaxy light-emitting layer grows and form graphical luminescence chip.Graphical luminous epitaxial wafer of the present invention and luminescence chip, its inside has a plurality of looks of falling hexagonal pyramidal bands, can on the basis of pattern technology, further improve like this and get optical efficiency.
In the present invention, but the graphical roughened layer that forms after roughened layer and the alligatoring is undoped gallium nitride or n type gallium nitride, like this crystal mass of the luminous epitaxial loayer of secondary epitaxy growth can the reduction; In order to obtain the alligatoring pattern of enough yardsticks, but roughened layer must guarantee enough thickness, and comparatively desirable thickness must be more than 1 micron; In order not increase luminous epitaxial loayer cross growth difficulty, lateral etch raceway groove Breadth Maximum must be less than or equal to 10 microns; But the wet etching roughened layer both can adopt the phosphoric acid and the sulfuric acid mixed solution of high temperature (more than 100 ℃), also can adopt high-temperature alkaline solution, and was like potassium hydroxide, NaOH, ammoniacal liquor etc., perhaps auxiliary to accelerate etch-rate by ultraviolet light; The lateral etches degree of depth also must be optimized obtaining preferable alligatoring size and to prevent that epitaxial loayer from peeling off, but the etched border width suggestion of roughened layer is no more than 10 microns.
Other features and advantages of the present invention will be set forth in specification subsequently, and, partly from specification, become apparent, perhaps understand through embodiment of the present invention.The object of the invention can be realized through the structure that in specification, claims and accompanying drawing, is particularly pointed out and obtained with other advantages.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used to explain the present invention with embodiments of the invention, is not construed as limiting the invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is the graphical gallium nitride base light emitting epitaxial slice structure sketch map of the preferred embodiment of the present invention.
Fig. 2 is the graphical gallium nitride base light emitting chip structure sketch map of the preferred embodiment of the present invention.
Fig. 3 ~ Fig. 7 is the graphical gallium nitride base light emitting epitaxial wafer and the luminescence chip manufacturing process sketch map of the preferred embodiment of the present invention.
Fig. 8 is a kind of pattern that can be used for graphical gallium nitride base light emitting epitaxial wafer and luminescence chip of the preferred embodiment of the present invention.
Parts symbol description among the figure:
10: Sapphire Substrate; 11: nucleating layer; 12: but roughened layer; 120: graphical roughened layer; 121: the gallium nitride layer block; 122: raceway groove; The 13:n-GaN layer; 14: Multiple Quantum Well (MQW); The 15:p-GaN layer; The 20:ITO layer; The 21:p electrode; The 22:n electrode; 100: the lateral etch channel region; 200:SiO
2Mask.
Embodiment
Below will combine accompanying drawing and embodiment to describe execution mode of the present invention in detail, how the application technology means solve technical problem to the present invention whereby, and the implementation procedure of reaching technique effect can make much of and implement according to this.Need to prove that only otherwise constitute conflict, each embodiment among the present invention and each characteristic among each embodiment can mutually combine, formed technical scheme is all within protection scope of the present invention.
As shown in Figure 1; A kind of graphical gallium nitride base light emitting epitaxial wafer; Its structure comprises Sapphire Substrate 10, nucleating layer 11, graphical roughened layer 120 and luminous epitaxial loayer, and luminous epitaxial loayer comprises n-GaN layer 13, Multiple Quantum Well (MQW) 14 and p-GaN layer 15 successively.Wherein, nucleating layer 11 is formed on the Sapphire Substrate 10, and its material is Doped GaN not; Graphical roughened layer 120 is formed on the nucleating layer 11, is made up of with raceway groove 122 a plurality of gallium nitride layer blocks 121, and its material is n-GaN or unadulterated GaN, 2 microns of thickness.The pattern of graphical roughened layer as shown in Figure 8, graphical roughened layer 120 is divided into the circular block 121 of periodicity of mutual isolation through raceway groove 122, the single cycle is 13 microns, wherein round diameter is 10 microns, 3 microns of minimum channel width; The lower surface in 3 microns zones, edge of the close lateral etch raceway groove 122 of each circular block is hangs hexagonal taper alligatoring pattern by the feet; The luminous epitaxial loayer of being made up of n-GaN layer 13, Multiple Quantum Well (MQW) 14 and p-GaN layer 15 is formed on the graphical roughened layer 120 and fills and leads up all raceway grooves 122.
As shown in Figure 2; On the basis of above-mentioned graphical gallium nitride base light emitting epitaxial wafer, can form graphical gallium nitride base light emitting chip through electric polarization, its structure comprises Sapphire Substrate 10, nucleating layer 11, graphical roughened layer 120, luminous epitaxial loayer (comprising n-GaN layer 13, Multiple Quantum Well (MQW) 14 and p-GaN layer 15 successively), ITO transparency conducting layer 20, p electrode 21 and n electrode 22.Wherein, nucleating layer 11 is formed on the Sapphire Substrate 10, and its material is Doped GaN not; Graphical roughened layer 120 is formed on the nucleating layer 11, and its material is n-GaN or unadulterated GaN, 2 microns of thickness.The pattern of graphical roughened layer as shown in Figure 8,, graphical roughened layer 120 is divided into the circular block 121 of periodicity of mutual isolation through raceway groove 122, the single cycle is 13 microns, wherein round diameter is 10 microns, 3 microns of minimum channel width; The lower surface in 3 microns zones, edge of the close ditch 122 of each circular block is hangs hexagonal taper alligatoring pattern by the feet; The luminous epitaxial loayer of being made up of n-GaN layer 13, Multiple Quantum Well (MQW) 14 and p-GaN layer 15 is formed on the graphical roughened layer 120 and fills and leads up all raceway grooves 122; ITO transparency conducting layer 20 is formed on the p-GaN layer 15; P electrode 21 is formed on the ITO transparency conducting layer 20; N electrode 22 is formed on the n-GaN layer 13.
In the pattern of the graphical roughened layer shown in Fig. 8, gallium nitride layer block 121 is circular block, is periodic distribution, should notice that this kind distribution is a kind of preferred implementation wherein, also can be non-periodic distribution.The shape of gallium nitride layer block 121 is not limited to circle, and square, ellipse etc. also can be arranged.
Above-mentioned graphical gallium nitride base light emitting epitaxial wafer manufacture method as shown in Figure 1, its making step comprises:
As shown in Figure 3, on Sapphire Substrate 10, adopt metal organic chemical vapor deposition (MOCVD) epitaxial growth successively: but nucleating layer 11 and roughened layer 12, and nucleating layer 11 materials are Doped GaN not, but roughened layer 12 is the n-GaN layer of 2 microns of thickness.
As shown in Figure 4, but adopt photoetching and be etched on the roughened layer 12 and define SiO
2Mask regions 200 and lateral etch channel region 100.Lithography layout can be made up of the raceway groove 122 and the circular block that periodically repeat with reference to adopting Fig. 8 to design, and total cycle is 13 microns; Wherein round diameter is 10 microns; 3 microns of minimum channel width, raceway groove 122 is a lateral etch channel region 100, circular block is a mask regions 200.After having defined mask regions 200 and lateral etch channel region 100, but the roughened layer 12 that can adopt dry plasma etch lateral etch channel region 100 and nucleating layer 11 are until exposing Sapphire Substrate 10 fully.
As shown in Figure 5; Adopt 250 ℃ the sulfuric acid and the epitaxial loayer at phosphoric acid (ratio 3:2) lateral etch raceway groove 122 two ends; Etching period was controlled at 2 minutes; Can obtain the fall hexagonal pyramidal looks band of the lateral etches degree of depth about 3 microns like this, thereby form graphical roughened layer 120 around lateral etch raceway groove 100.In addition, also can adopt high-temperature alkaline to dissolve (like potassium hydroxide, NaOH, ammoniacal liquor etc.), raceway groove is carried out lateral etch liquid, perhaps auxiliary to accelerate etch-rate by ultraviolet light.
Shown in accompanying drawing 6; On graphical roughened layer 120, continue the epitaxial growth luminescent layer; Comprise n-GaN layer 13, Multiple Quantum Well (MQW) 14 and p-GaN layer 15 successively, and luminous epitaxial loayer laterally fills and leads up raceway groove 100, thereby form graphical gallium nitride base light emitting epitaxial wafer.
As shown in Figure 7; On the basis of above-mentioned graphical gallium nitride base light emitting epitaxial wafer manufacture method; Make graphical gallium nitride base light emitting chip; Comprise that the subregional luminous epitaxial loayer of etched part is to exposing n-GaN layer 13; On p-GaN layer 15, make ITO transparency conducting layer 20, on ITO layer 20, make p electrode 21; Manufacturing n electrode 22 on n-GaN layer 13.
Clearly, explanation of the present invention should not be construed as and is limited only within the foregoing description, but comprises the whole execution modes that utilize the present invention to conceive.
Claims (20)
1. graphical gallium nitride base light emitting epitaxial wafer, its structure comprises:
Substrate;
Graphical roughened layer is formed on the substrate; It comprises a plurality of raceway grooves and a plurality of gallium nitride layer block; Each gallium nitride layer block is isolated through raceway groove each other, and the lower surface of the fringe region of the close raceway groove of each gallium nitride layer block is for hanging hexagonal taper alligatoring pattern by the feet;
The gallium nitride base light emitting epitaxial loayer is formed on the graphical roughened layer, and fills and leads up all raceway grooves.
2. graphical gallium nitride base light emitting epitaxial wafer according to claim 1, the material of graphical roughened layer wherein are undoped gallium nitride or n type gallium nitride.
3. graphical gallium nitride base light emitting epitaxial wafer according to claim 1, graphical roughened layer thickness wherein is greater than or equal to 1 micron.
4. graphical gallium nitride base light emitting epitaxial wafer according to claim 1, raceway groove Breadth Maximum wherein is less than or equal to 10 microns.
5. graphical gallium nitride base light emitting epitaxial wafer according to claim 1 wherein has the gallium nitride layer block border width of hanging hexagonal awl alligatoring pattern by the feet and is less than or equal to 10 microns.
6. graphical gallium nitride base light emitting chip, its structure comprises:
Substrate;
Graphical roughened layer is formed on the substrate; It comprises a plurality of raceway grooves and a plurality of gallium nitride layer block; Each gallium nitride layer block is isolated through raceway groove each other, and the lower surface of the fringe region of the close raceway groove of each gallium nitride layer block is for hanging hexagonal taper alligatoring pattern by the feet;
The gallium nitride base light emitting epitaxial loayer is formed on the graphical roughened layer and fills and leads up all raceway grooves, and the gallium nitride base light emitting epitaxial loayer comprises n type gallium nitride-based epitaxial layer, active layer and p type gallium nitride-based epitaxial layer successively;
The p electrode is formed on the p type gallium nitride-based epitaxial layer;
The n electrode is formed on the n type gallium nitride-based epitaxial layer.
7. graphical gallium nitride base light emitting chip according to claim 6, the material of graphical roughened layer wherein are undoped gallium nitride or n type gallium nitride.
8. graphical gallium nitride base light emitting chip according to claim 6, graphical roughened layer thickness wherein is greater than or equal to 1 micron.
9. graphical gallium nitride base light emitting chip according to claim 6, raceway groove Breadth Maximum wherein is less than or equal to 10 microns.
10. graphical gallium nitride base light emitting chip according to claim 6 wherein has the gallium nitride layer block border width of hanging hexagonal awl alligatoring pattern by the feet and is less than or equal to 10 microns.
11. the manufacture method of a graphical gallium nitride base light emitting epitaxial wafer comprises step:
One substrate is provided;
But growth one roughened layer on substrate, its material is a gallium nitride, and its lower surface is nitrogen polarity;
But but graphical roughened layer of definition and the subregional roughened layer of etched part to exposing substrate, but to form the roughened layer block and the raceway groove of a plurality of mutual isolation;
But adopt the wet method mode to be etched into the taper of falling the hexagonal near the fringe region lower surface of the roughened layer block of lateral etch raceway groove;
But the luminous epitaxial loayer of continued growth on roughened layer, and luminous epitaxial loayer laterally fills and leads up raceway groove, forms graphical gallium nitride base light emitting epitaxial wafer.
12. the manufacture method of a graphical gallium nitride base light emitting chip comprises step:
One substrate is provided;
But growth one roughened layer on substrate, its material is a gallium nitride, and its lower surface is nitrogen polarity;
But but graphical roughened layer of definition and the subregional roughened layer of etched part to exposing substrate, but to form the roughened layer block and the raceway groove of a plurality of mutual isolation;
But adopt the wet method mode to be etched into the taper of falling the hexagonal near the fringe region lower surface of the roughened layer block of lateral etch raceway groove;
But the luminous epitaxial loayer of continued growth on roughened layer, and luminous epitaxial loayer is is laterally filled and led up raceway groove;
On luminous epitaxial loayer, make p, n electrode respectively to form graphical gallium nitride base light emitting chip.
13. the manufacture method of graphical gallium nitride base light emitting chip according to claim 12, but the material of roughened layer wherein is undoped gallium nitride or n type gallium nitride.
14. the manufacture method of graphical gallium nitride base light emitting chip according to claim 12, but roughened layer thickness wherein is greater than or equal to 1 micron.
15. the manufacture method of graphical gallium nitride base light emitting chip according to claim 12, raceway groove Breadth Maximum wherein is less than or equal to 10 microns.
16. the manufacture method of graphical gallium nitride base light emitting chip according to claim 12, but wherein the etched border width of roughened layer is less than or equal to 10 microns.
17. the manufacture method of graphical gallium nitride base light emitting epitaxial wafer according to claim 12 and luminescence chip, but wherein the wet etching roughened layer adopts phosphoric acid and sulfuric acid mixed solution.
18. the manufacture method of graphical gallium nitride base light emitting epitaxial wafer according to claim 17 and luminescence chip, wherein the temperature of phosphoric acid and sulfuric acid mixed solution is greater than or equal to 100 ℃.
19. the manufacture method of graphical gallium nitride base light emitting epitaxial wafer according to claim 12 and luminescence chip, but wherein the wet etching roughened layer adopts alkaline solution.
20. the manufacture method of graphical gallium nitride base light emitting epitaxial wafer according to claim 19 and luminescence chip is wherein through heating or the auxiliary speed of accelerating wet etching of shining of ultraviolet light.
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| CN104465899A (en) * | 2014-11-28 | 2015-03-25 | 西安神光皓瑞光电科技有限公司 | Preparation method for LED perpendicular structure |
| CN109308992A (en) * | 2018-09-21 | 2019-02-05 | 苏州汉骅半导体有限公司 | The method for recycling silicon carbide substrates |
| CN113921670A (en) * | 2021-09-26 | 2022-01-11 | 天津三安光电有限公司 | Light-emitting element and preparation method thereof |
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