CN102299234A - Light emitting diode (LED) and manufacturing method thereof - Google Patents
Light emitting diode (LED) and manufacturing method thereof Download PDFInfo
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- CN102299234A CN102299234A CN2011101573721A CN201110157372A CN102299234A CN 102299234 A CN102299234 A CN 102299234A CN 2011101573721 A CN2011101573721 A CN 2011101573721A CN 201110157372 A CN201110157372 A CN 201110157372A CN 102299234 A CN102299234 A CN 102299234A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 84
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 230000004308 accommodation Effects 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000007598 dipping method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
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- 238000005234 chemical deposition Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract 2
- 125000001475 halogen functional group Chemical group 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
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- 239000007787 solid Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000003756 stirring Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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Abstract
The invention discloses a light emitting diode (LED) and a manufacturing method thereof. The LED comprises: a chip, which can emit light ray and possesses a first semiconductor material layer and a second semiconductor material layer, wherein one side is a light extraction side and the other side is a bottom side; a framework, which is formed on the light extraction side of the chip, wherein an inside of the framework forms an accommodation space with a surface of the chip; phosphor materials, which are used to fill in the accommodation space in the framework and can emit colored light after being excited by the light emitted by the chip so as to mix with the light emitted by the chip. Therefore, a structure is simple and tidy; a mixed light color is uniform so that generation of light spots or halos can be minimized.
Description
Technical field
The present invention relates to the chip of gallium nitride LED field, be meant a kind of light-emitting diode and manufacture method thereof especially.
Background technology
Light-emitting diode now utilize two kinds photochromic or three kinds photochromic (i.e. two wavelength or three-wavelengths) carry out colour mixture so that light-emitting diode finally sends white light.For example with GaN base blue-ray LED (Light Emitting Diode, light-emitting diode) collocation phosphor material powder, wherein to give off peak value be blue light about 460nm to LED, and the blue-light excited phosphor material powder of part sends peak value is green-yellow light about 570nm, photochromic by lenticule focusing again with the blue light that another part transmits to mix, and then form white light.Yet, when the phosphor material powder crawling, be easy to generate hot spot or chromosphere, for example yellow circle or blue circle.
In the prior art, one of phosphor material powder collocation form is just phosphor material powder to be added in the epitaxial loayer at the making chip stage, or fills in the appropriate location of epitaxial loayer and substrate in addition; The chip light that excited by electric power to be sent fluorescence excitation powder material more by this.
For example Chinese patent CN101241962 discloses a kind of preparation method of White-light LED chip, and it provides fluorescent material and the allotment of adhesion solvent to mix, and puts in the container of a spray system after stirring.Epitaxial wafer behind the led chip common process does not carry out scribing earlier, makes earlier on the pad of led chip and covers photoresist; LED epitaxial wafer before the scribing is placed on the sample table top and covers with a cover, shower nozzle is in the cover chamber, and the paint finishing pressurization will mix solvent and eject by the shower nozzle on the pipeline, then mixes solvent and is coated on LED epitaxial wafer surface equably; After being attached on the fluorescent material drying on the chip, to the LED epitaxial wafer adhesive process at quarter that delusters, photoresist and fluorescent material on the pad come off exposed pad simultaneously; The LED epitaxial wafer is carried out scribing process make the chip particle separately, obtain each individual chips.Though this kind mode joins the coating process of fluorescent material in the LED production upstream, but it needs to increase the adhesive process at quarter that delusters again, photoresist and fluorescent material on the pad are come off simultaneously with exposed pad, therefore increase processing procedure, and can not guarantee that fluorescent material evenly distributes.
Summary of the invention
The purpose of this invention is to provide a kind of light-emitting diode and manufacture method thereof, light emitting diode construction of the present invention is simplified, and can make phosphor material powder reach even distribution and effectively reach and make light colour mixture effect of uniform.The manufacture method of light-emitting diode of the present invention simple for production and with existing processing procedure compatibility, so can satisfy the functional need of make producing.
For achieving the above object, the present invention by the following technical solutions:
A kind of light-emitting diode comprises:
The chip that can emit beam, it has one first semiconductor material layer and one second semiconductor material layer, and a side is the bright dipping side, and opposite side is the bottom side;
A framework is formed on the bright dipping side of described chip, and its inner surface with described chip forms accommodation space;
In order to the phosphor material powder in the described accommodation space that is placed into described framework inside, the light that sent by described chip excites and sends coloured light, and then produces with light that described chip is sent and to mix.
Wherein: described first semiconductor material layer is a P type GaN semiconductor material layer, and described second semiconductor material layer is a N type GaN semiconductor material layer.
Wherein: described light-emitting diode also comprises one first electrode and one second electrode, and wherein said first electrode is formed on described first semiconductor material layer, and described first semiconductor material layer that is electrical connected, and is positioned at described accommodation space; Described second electrode, it is formed on described second semiconductor material layer, and described second semiconductor material layer that is electrical connected, and is positioned at described accommodation space.
Wherein: described light-emitting diode also comprises two leads, is to electrically connect described first electrode and described second electrode respectively.
Wherein: the material of described framework is selected from silicon dioxide, titanium dioxide or epoxy resin.
The present invention also provides a kind of manufacturing method for LED, comprising:
Step a, mat extensional mode grown epitaxial layer on a substrate;
Step b, mat manufacture of semiconductor make a plurality of chip structure bodies on epitaxial loayer, and each chip structure body comprises two electrodes;
Step c utilize the coating means to form a framework on each chip structure body, and adjacent framework interosculates;
Steps d is cut to obtain independently chip each chip structure body with the cutting processing procedure;
Step e carries out routing to connect lead respectively to two electrodes on each chip;
Step f is placed into the fluorescent material material in the accommodation space of the chip that is connected with lead.
Wherein: the described phosphor material powder among the step e covers two electrodes and fixes two leads.
Wherein: described coating means comprise evaporation, sputter or chemical deposition.
Wherein: described each chip structure body being cut, is to carry out from the position that adjacent frame is interosculated a minute cutting, so that adjacent chip structure body is separated into independently chip, and each independently all has a framework on the chip.
The invention has the advantages that:
1. owing to be on chip surface, directly to form a framework for filling phosphor material powder, so structure is simplified.
2. because phosphor material powder covers on the chip, and be positioned at the direct of travel of light, so light can more efficiently and more uniform interact with phosphor material powder, and then reach and mix photochromic more evenly, and can reduce generation hot spot or chromosphere by this.
Since shape of the present invention after growth forms epitaxial loayer and forms the chip structure body, utilize modes such as evaporation, sputter or chemical deposition to produce framework again, then carry out solid crystalline substance, routing again and fill phosphor material powder, encapsulate at last and form default LED device; Therefore whole epitaxial growth, form chip structure, form framework, cutting, solid crystalline substance, routing, fill phosphor material powder and encapsulation, all, therefore produce easy helping and under current production devices operates, finish the production of product with processing procedure compatibility now.
Description of drawings
Fig. 1 is a schematic appearance of the present invention;
Fig. 2 is a structural representation of the present invention;
Fig. 3 is manufacture method step a of the present invention and step b schematic diagram;
Fig. 4 is a manufacture method step c schematic diagram of the present invention;
Fig. 5 is a manufacture method steps d schematic diagram of the present invention;
Fig. 6 is a manufacture method step e schematic diagram of the present invention;
Fig. 7 is a manufacture method step f schematic diagram of the present invention.
Embodiment
Below, enumerate preferred embodiment and conjunction with figs. and describe in detail promptly according to purpose of the present invention, effect and structure configuration.
See also Fig. 1, it is embodiments of the invention figure, and it shows a chip 10, has one first semiconductor material layer 12 and one second semiconductor material layer 14; Between first semiconductor material layer 12 and second semiconductor material layer 14, has a luminescent layer 16; Wherein first semiconductor material layer 12 is for being P type GaN semiconductor material layer, and second semiconductor material layer 14 is a N type GaN semiconductor material layer; Luminescent layer 16 is quantum well or multiple quantum trap.
Moreover chip 10 tops surfaces is bright dipping side 18, and surface below is close to substrate 20 and is bottom side 19; When chip 10 is excited by electric power luminescent layer 16 is emitted beam, then light is appeared by the bright dipping side 18 on the chip 10.
Another framework 30 is formed on the chip 10.More specifically, this framework 30 is to extend towards the external world from this bright dipping side 18.These framework 30 inside form accommodation spaces 32 with chip 10 surfaces in addition.Therefore the surface of first semiconductor material layer 12 of chip 10 is all corresponding in accommodation space 32 with the surface of second semiconductor material layer 14.
See also Fig. 2, phosphor material powder 50 is placed into accommodation space 32 inside of framework 30; Above-mentioned phosphor material powder 50 is mixed by fluorescent material and colloid, and the light that phosphor material powder 50 can be sent by chip 10 excites generation coloured light, and then produces with light that chip 10 is sent and to mix.
In addition, two leads 46 and 48 are not to be subjected to stopping of phosphor material powder 50 with the situation that conducts that an end electrically connects two electrodes 42 and 44, two leads 46 and 48 and two electrodes 42 and 44 respectively.That is to say,, can not cause two leads 46 and 48 and two electrodes 42 and 44 to produce the situation that opens circuit though phosphor material powder 50 covers two electrodes 42 and 44.Phosphor material powder 50 has the effect of fixing two leads 46 and 48 in addition.
About each step of manufacture method of the present invention, following explanation:
See also Fig. 3, it discloses the step a of manufacture method of the present invention and the schematic diagram of step b.Particularly, step a is a mat extensional mode grown epitaxial layer 60 on a substrate 20.First semiconductor material layer 12 during above-mentioned epitaxial loayer comprises (for P type GaN semiconductor material layer), second semiconductor material layer 14 (for N type GaN semiconductor material layer), and luminescent layer 16, it is quantum well or multiple quantum trap, and between first semiconductor material layer 12 and second semiconductor material layer 14.
And rapid b makes a plurality of chip structure bodies 62 with manufacture of semiconductor on epitaxial loayer 60.Wherein each chip structure body 62 comprises two electrodes 42 and 44.
See also Fig. 4, it discloses the schematic diagram that step c of the present invention forms framework 30.Particularly, be to utilize the coating means on each chip structure body 62, to form a framework 30, and the framework 30 on the adjacent chip structure body 62 can interosculate.And its manufacturing materials of framework 30 is selected from silicon dioxide, titanium dioxide or epoxy resin; The coating means comprise evaporation, sputter or chemical deposition.By the time after framework 30 was finished, the inside of the framework 30 of this moment and the surface of chip structure body 62 constituted an accommodation space 32.
See also Fig. 5, it is for the schematic diagram of steps d of the present invention.Particularly, be each chip structure body 62 to be cut to obtain independently chip 10 with the cutting processing procedure.Particularly, each chip structure body 62 is cut, be to carry out from the position that adjacent frame 30 is interosculated a minute cutting make adjacent chip structure body 62 be separable into by this and be chip 10 independently, and each is independently all had a framework 30 on the chip 10.
See also Fig. 6, it discloses step e schematic diagram of the present invention.Particularly, be that two electrodes 42 on each chip 10 are carried out routing (bounding line) to be connected lead 46 and 48 respectively with 44.This routing processing procedure can be carried out after chip 10 is fixed in base 64 with solid crystal type again.
See also Fig. 7, it discloses the schematic diagram of step f of the present invention.Particularly, be the goods of getting behind the crystalline substance admittedly that previous step obtains, and fluorescent material material 50 be placed in the accommodation space 32 of the chip 10 that is connected with lead 46 and 48.It should be noted that, though these phosphor material powder 50 meeting coated electrodes 42 and 44, yet finished to be electrical connected with electrode 42 and 44 by aforementioned content known lead 46 and 48, thus phosphor material powder 50 and unlikely cause lead 46 and 48 with electrode 42 and 44 formation off states.In addition, lead 46 and 48 some be positioned at accommodation space 32, and be subjected to the coating of phosphor material powder 50, so can make lead 46 and 48 obtain firm locating effect, and then make lead 46 and 48 in encapsulation procedure subsequently, difficultly break away from electrode 42 and 44 because of being subjected to spurring.
In addition, the substrate 20 that is disclosed among Fig. 6 or Fig. 7 can be by suitable processing procedure with its thin typeization or remove, and for example handles by mechanical lapping, hot soarfing or mode such as laser lift-off makes substrate 20 thin typeizations or removes.
The above is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (9)
1. a light-emitting diode is characterized in that, comprising:
The chip that can emit beam, it has one first semiconductor material layer and one second semiconductor material layer, and a side is the bright dipping side, and opposite side is the bottom side;
A framework is formed on the bright dipping side of described chip, and its inner surface with described chip forms accommodation space;
In order to the phosphor material powder in the described accommodation space that is placed into described framework inside, the light that sent by described chip excites and sends coloured light, and then produces with light that described chip is sent and to mix.
2. light-emitting diode as claimed in claim 1 is characterized in that: described first semiconductor material layer is a P type GaN semiconductor material layer, and described second semiconductor material layer is a N type GaN semiconductor material layer.
3. light-emitting diode as claimed in claim 1, it is characterized in that: also comprise one first electrode and one second electrode, wherein said first electrode is formed on described first semiconductor material layer, and described first semiconductor material layer that is electrical connected, and is positioned at described accommodation space; Described second electrode, it is formed on described second semiconductor material layer, and described second semiconductor material layer that is electrical connected, and is positioned at described accommodation space.
4. light-emitting diode as claimed in claim 3 is characterized in that: also comprising two leads, is to electrically connect described first electrode and described second electrode respectively.
5. light-emitting diode as claimed in claim 1 is characterized in that: the material of described framework is selected from silicon dioxide, titanium dioxide or epoxy resin.
6. a manufacturing method for LED is characterized in that, comprising:
Step a, mat extensional mode grown epitaxial layer on a substrate;
Step b, mat manufacture of semiconductor make a plurality of chip structure bodies on epitaxial loayer, and each chip structure body comprises two electrodes;
Step c utilize the coating means to form a framework on each chip structure body, and adjacent framework interosculates;
Steps d is cut to obtain independently chip each chip structure body with the cutting processing procedure;
Step e carries out routing to connect lead respectively to two electrodes on each chip;
Step f is placed into the fluorescent material material in the accommodation space of the chip that is connected with lead.
7. manufacturing method for LED as claimed in claim 6 is characterized in that: the described phosphor material powder among the step e covers two electrodes and fixes two leads.
8. manufacturing method for LED as claimed in claim 6 is characterized in that: described coating means comprise evaporation, sputter or chemical deposition.
9. manufacturing method for LED as claimed in claim 6, it is characterized in that: described each chip structure body is cut, be to carry out from the position that adjacent frame is interosculated to a minute cutting, so that adjacent chip structure body is separated into independently chip, and each independently all has a framework on the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101573721A CN102299234A (en) | 2011-06-13 | 2011-06-13 | Light emitting diode (LED) and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011101573721A CN102299234A (en) | 2011-06-13 | 2011-06-13 | Light emitting diode (LED) and manufacturing method thereof |
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| CN102299234A true CN102299234A (en) | 2011-12-28 |
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| CN201069780Y (en) * | 2007-07-18 | 2008-06-04 | 宁波安迪光电科技有限公司 | High power white light LED and its chip |
| CN101388426A (en) * | 2007-09-10 | 2009-03-18 | 亿光电子工业股份有限公司 | Method for producing a light-emitting semiconductor wafer and light-emitting semiconductor component |
| JP2009134965A (en) * | 2007-11-29 | 2009-06-18 | Stanley Electric Co Ltd | LIGHTING DEVICE AND LIGHTING DEVICE MANUFACTURING METHOD |
| CN101663767A (en) * | 2007-01-22 | 2010-03-03 | 美商克立股份有限公司 | A Wafer-Level Phosphor Coating Method and Devices Fabricated Using the Method |
| CN101719492A (en) * | 2009-10-27 | 2010-06-02 | 东莞市精航科技有限公司 | Packaging structure and packaging method of light emitting diode |
| CN102047456A (en) * | 2008-03-31 | 2011-05-04 | 克里公司 | Emission tuning methods and devices fabricated utilizing methods |
-
2011
- 2011-06-13 CN CN2011101573721A patent/CN102299234A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101663767A (en) * | 2007-01-22 | 2010-03-03 | 美商克立股份有限公司 | A Wafer-Level Phosphor Coating Method and Devices Fabricated Using the Method |
| CN201069780Y (en) * | 2007-07-18 | 2008-06-04 | 宁波安迪光电科技有限公司 | High power white light LED and its chip |
| CN101388426A (en) * | 2007-09-10 | 2009-03-18 | 亿光电子工业股份有限公司 | Method for producing a light-emitting semiconductor wafer and light-emitting semiconductor component |
| JP2009134965A (en) * | 2007-11-29 | 2009-06-18 | Stanley Electric Co Ltd | LIGHTING DEVICE AND LIGHTING DEVICE MANUFACTURING METHOD |
| CN102047456A (en) * | 2008-03-31 | 2011-05-04 | 克里公司 | Emission tuning methods and devices fabricated utilizing methods |
| CN101719492A (en) * | 2009-10-27 | 2010-06-02 | 东莞市精航科技有限公司 | Packaging structure and packaging method of light emitting diode |
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Application publication date: 20111228 |