CN102291097B - Program-controlled variable five-bit nonreciprocal microwave monolithic integrated attenuator - Google Patents
Program-controlled variable five-bit nonreciprocal microwave monolithic integrated attenuator Download PDFInfo
- Publication number
- CN102291097B CN102291097B CN201110169477.9A CN201110169477A CN102291097B CN 102291097 B CN102291097 B CN 102291097B CN 201110169477 A CN201110169477 A CN 201110169477A CN 102291097 B CN102291097 B CN 102291097B
- Authority
- CN
- China
- Prior art keywords
- standing wave
- resistance
- microwave
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 claims abstract description 57
- 230000001105 regulatory effect Effects 0.000 claims description 59
- 238000000034 method Methods 0.000 abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
Images
Landscapes
- Networks Using Active Elements (AREA)
Abstract
The invention discloses a program-controlled variable five-bit nonreciprocal microwave monolithic integrated attenuator, which consists of an input port standing wave regulation module, a microwave attenuation module, an output port standing wave regulation module and a control module (21), wherein the input port standing wave regulation module is completely symmetrical with the output port standing wave regulation module. The program-controlled variable five-bit nonreciprocal microwave monolithic integrated attenuator has the advantages that: all attenuation networks are connected in parallel, the loss of microwave signals is low; all control switches and all microwave single-pole single-throw switches are realized by adopting small gallium arsenide field effect transistors, and have high switching performance, and the operation bandwidth of the attenuator is wide; an attenuation circuit is connected in parallel with a microwave amplitude balancing circuit, so the amount of attenuation in the whole working band is balanced and flat; attenuation control coding is irregular, and if a certain bit is shifted, results may not be influenced greatly; and a novel structure is introduced to reduce the sensitivity of a process and then the yield of a chip is increased from 60 percent to 80 percent.
Description
Technical field
The present invention relates to a kind of microwave monolithic integrated circuit, five nonreciprocal microwave monolithic integrated attenuators of especially a kind of Programmable and Variable.
Background technology
Digital pad is conventional components and parts in microwave communication system.Digital pad is formed by the unit attenuation network cascade of differential declines amount conventionally, by the combination of commensurate not, realizes multiple attenuation, thereby realize, the control of signal is processed.Traditional attenuator adopts PIN or GaAs MESFET as core switching control device, its thinking is all to decay by controlling the attenuation network unit of realization, then the multidigit attenuator that cascade form to need, realizes the decay of signal and unattenuated by the Push And Release of switch passage.And the binary coding that the control code that traditional attenuator is corresponding is standard, the weak point of this attenuator is: when (1) is unattenuated, because multidigit nature insertion loss is superposeed by multidigit, cause the loss of signal; (2) between commensurate, there is not mismatch, be difficult to realize linear superposition, cause attenuation accuracy not high; (3) adopt large scale tube core switch, higher to the requirement on machining accuracy of technique, cause actual rate of finished products not high; (4) once certain be offset, the whole state relevant to this is all offset, and has heredity.
Summary of the invention
The technical problem to be solved in the present invention is to provide five nonreciprocal microwave monolithic integrated attenuators of program control Programmable and Variable that a kind of precision is high, rate of finished products is high.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
Five nonreciprocal microwave monolithic integrated attenuators, are comprised of input port standing wave adjustment module, microwave attenuation module, output port standing wave adjustment module and control module; Described input port standing wave adjustment module and output port standing wave adjustment module are asymmetric;
Described input port standing wave adjustment module forms to the cascade of third level input port standing wave regulating circuit by first; Described first is identical to third level input port standing wave regulating circuit structure, and wherein first order input port standing wave regulating circuit is in series by first order input port standing wave regulating circuit unit and the first control switch;
Described microwave attenuation module is composed in parallel by first to fourth grade of microwave attenuation circuit and microwave magnitude-balancing circuit; Described first to fourth grade of microwave attenuation circuit structure is identical, and wherein first order microwave attenuation circuit is composed in series by the first fixed attenuation unit and the first microwave single pole single throw switch;
Described output port standing wave adjustment module is comprised of the cascade of first to fourth grade of output port standing wave regulating circuit; Described first order output port standing wave regulating circuit is in series by the 4th standing wave regulating circuit unit and the 4th control switch, described second is identical to fourth stage output port standing wave regulating circuit structure, and wherein second level output port standing wave regulating circuit is in series by the 5th standing wave regulating circuit unit and the 5th control switch;
The described first to the 7th control switch, first to fourth microwave single pole single throw switch are connected with the corresponding control output end of control module respectively.
Described five nonreciprocal microwave monolithic integrated attenuators of Programmable and Variable, is characterized in that: described first order input port standing wave regulating circuit unit is comprised of field effect transistor T5, resistance R 5 and resistance R 51; Input port standing wave regulating circuit unit, the described second level is comprised of field effect transistor T6, resistance R 6 and resistance R 61; Described third level input port standing wave regulating circuit unit is comprised of field effect transistor T7, resistance R 7 and resistance R 71; After the drain electrode parallel connection of described field effect transistor T5, T6 and T7, be connected with signal input port PORT1, its source electrode is respectively through resistance R 5, R6, R7 ground connection, and grid connects respectively V1, V2, the V3 control port of control module through resistance R 51, R61 and R71;
Described microwave magnitude-balancing circuit 24 connects wire by resistance R 0 and institute and forms, and one end connects input port PORT1, and the other end connects output port PORT2; Described first order microwave attenuation circuit is comprised of field effect transistor T1, resistance R 1 and resistance R 11; Described second level microwave attenuation circuit is comprised of field effect transistor T2, resistance R 2 and resistance R 21; Described third level microwave attenuation circuit is comprised of field effect transistor T3, resistance R 3 and resistance R 31; Described fourth stage microwave attenuation circuit is comprised of field effect transistor T4, resistance R 4 and resistance R 41; After the drain electrode parallel connection of described field effect transistor T1, T2, T3, T4, connect input port PORT1, its source electrode meets output port PORT2 through resistance R 1, R2, R3 and R4 respectively, and grid connects respectively V4, V5, V6 and the V7 port of control module through resistance R 11, R21, R31 and R41;
Described first order output port standing wave regulating circuit is comprised of field effect transistor T111 and T112, resistance R 11 and R111; Described second level output port standing wave regulating circuit is comprised of field effect transistor T10, resistance R 10 and R101; Described third level output port standing wave regulating circuit is comprised of field effect transistor T9, resistance R 9 and R91; Described fourth stage output port standing wave regulating circuit is comprised of field effect transistor T8, resistance R 8 and resistance R 81; The drain electrode of described field effect transistor T111 meets output port PORT2, and its source electrode connects the drain electrode of described field effect transistor T112, and grid is connected the V8 port that connects control module by described resistance R 11 with the grid of described field effect transistor T112; The source electrode of described field effect transistor T112 is through described resistance R 11 ground connection;
After the drain electrode parallel connection of described field effect transistor T10, T9, T8, connect output port PORT2, its source electrode is respectively through resistance R 10, R9 and R8 ground connection, and grid connects respectively V3, V2 and the V1 port of control module through resistance R 101, R91, R81.
First to fourth microwave single pole single throw switch, the first to the 7th control switch control switch adopt gaas fet to realize.
Port is all normalized to 50 ohm.
The fixed attenuation amount ratio of described first to fourth fixed attenuation unit is 1:2:4:8, and the pad value of described microwave magnitude-balancing circuit is 0.5dB.
Described circuit is integrated in single-wafer.
The control coding of described control module and the relation of attenuation are as shown in the table, wherein A1 is minimal attenuation amount, the first to the 3rd control switch, first to fourth microwave single pole single throw switch, control end corresponding to the 4th to the 7th control switch is respectively V1, V2, V3, V4, V5, V6, V7, V8, V3, V2, V1.
| Attenuation | V1 | V2 | V3 | V4 | V5 | V6 | V7 | V8 |
| 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| A1 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 1 |
| 2*A1 | 1 | 0 | 0 | 1 | 0 | 0 | 0 | 0 |
| 3*A1 | 1 | 0 | 0 | 1 | 0 | 0 | 0 | 1 |
| 4*A1 | 1 | 0 | 0 | 0 | 1 | 0 | 0 | 0 |
| 5*A1 | 1 | 0 | 0 | 0 | 1 | 0 | 0 | 1 |
| 6*A1 | 0 | 1 | 0 | 1 | 1 | 0 | 0 | 0 |
| 7*A1 | 0 | 1 | 0 | 1 | 1 | 0 | 0 | 1 |
| 8*A1 | 0 | 1 | 0 | 0 | 0 | 1 | 0 | 0 |
| 9*A1 | 0 | 1 | 0 | 0 | 0 | 1 | 0 | 1 |
| 10*A1 | 0 | 0 | 1 | 1 | 0 | 1 | 0 | 0 |
| 11*A1 | 0 | 0 | 1 | 1 | 0 | 1 | 0 | 1 |
| 12*A1 | 0 | 0 | 1 | 0 | 1 | 1 | 0 | 0 |
| 13*A1 | 0 | 0 | 1 | 0 | 1 | 1 | 0 | 1 |
| 14*A1 | 1 | 1 | 0 | 1 | 1 | 1 | 0 | 0 |
| 15*A1 | 1 | 1 | 0 | 1 | 1 | 1 | 0 | 1 |
| 16*A1 | 1 | 1 | 0 | 0 | 0 | 0 | 1 | 0 |
| 17*A1 | 1 | 1 | 0 | 0 | 0 | 0 | 1 | 1 |
| 18*A1 | 1 | 0 | 1 | 1 | 0 | 0 | 1 | 0 |
| 19*A1 | 1 | 0 | 1 | 1 | 0 | 0 | 1 | 1 |
| 20*A1 | 1 | 0 | 1 | 0 | 1 | 0 | 1 | 0 |
| 21*A1 | 1 | 0 | 1 | 0 | 1 | 0 | 1 | 1 |
| 22*A1 | 0 | 1 | 1 | 1 | 1 | 0 | 1 | 0 |
| 23*A1 | 0 | 1 | 1 | 1 | 1 | 0 | 1 | 1 |
| 24*A1 | 0 | 1 | 1 | 0 | 0 | 1 | 1 | 0 |
| 25*A1 | 0 | 1 | 1 | 0 | 0 | 1 | 1 | 1 |
| 26*A1 | 0 | 1 | 1 | 1 | 0 | 1 | 1 | 0 |
| 27*A1 | 0 | 1 | 1 | 1 | 0 | 1 | 1 | 1 |
| 28*A1 | 1 | 1 | 1 | 0 | 1 | 1 | 1 | 0 |
| 29*A1 | 1 | 1 | 1 | 0 | 1 | 1 | 1 | 1 |
| 30*A1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 0 |
| 31*A1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
The beneficial effect that adopts technique scheme to produce is:
1,, when not to microwave signature attenuation, all control switchs all cut out, all microwave single pole single throw switch are all opened.Because all attenuation networks are in parallel, so to very little of the loss of microwave signal;
2, all control switchs, all microwave single pole single throw switch all adopt very little gaas fet to realize, and switch performance is very good;
3, dwindling of chip area can be improved brilliant garden utilance greatly;
4, owing to adopting little gaas fet, so the bandwidth of operation of attenuator can non-constant width; All attenuator circuits are in parallel with microwave magnitude-balancing circuit can be realized the smooth attenuation that is in admirable proportion in whole working band;
5, can adopt coded system to realize and automatically control attenuation, coding does not have rule, is not simple binary code, and a certain position is very little to the contribution of state, once a certain position is offset, can not cause great impact to result;
6, port is all normalized to 50 ohm, can cascade use, to realize larger attenuation;
7, the introducing of new construction has reduced the susceptibility of technique, makes chip yield bring up to 80% from 60%.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the circuit diagram of embodiment.
Embodiment
Five nonreciprocal microwave monolithic integrated attenuators, as shown in Figure 1: by input port standing wave adjustment module, microwave attenuation module, output port standing wave adjustment module and control module 21, formed; Described input port standing wave adjustment module and output port standing wave adjustment module are asymmetric;
Described input port standing wave adjustment module forms to the cascade of third level input port standing wave regulating circuit by first; Described first is identical to third level input port standing wave regulating circuit structure, and wherein first order input port standing wave regulating circuit is in series by first order input port standing wave regulating circuit unit 1 and the first control switch 2;
Described microwave attenuation module is composed in parallel by first to fourth grade of microwave attenuation circuit and microwave magnitude-balancing circuit 24; Described first to fourth grade of microwave attenuation circuit structure is identical, and wherein first order microwave attenuation circuit is composed in series by the first fixed attenuation unit 7 and the first microwave single pole single throw switch 8;
Described output port standing wave adjustment module is comprised of the cascade of first to fourth grade of output port standing wave regulating circuit; Described first order output port standing wave regulating circuit is formed in parallel by the 4th standing wave regulating circuit unit 22 and the 4th control switch 23, described second is identical to fourth stage output port standing wave regulating circuit structure, and wherein second level output port standing wave regulating circuit is in series by the 5th standing wave regulating circuit unit 15 and the 5th control switch 16;
The described first to the 7th control switch 2,4,6,16,17,19,21, first to fourth microwave single pole single throw switch 8,10,12,14 are connected with the corresponding control output end of control module 21 respectively.
Described five nonreciprocal microwave monolithic integrated attenuators of Programmable and Variable (as shown in Figure 2), described first order input port standing wave regulating circuit unit is comprised of field effect transistor T5, resistance R 5 and resistance R 51; Input port standing wave regulating circuit unit, the described second level is comprised of field effect transistor T6, resistance R 6 and resistance R 61; Described third level input port standing wave regulating circuit unit is comprised of field effect transistor T7, resistance R 7 and resistance R 71; After the drain electrode parallel connection of described field effect transistor T5, T6 and T7, be connected with signal input port PORT1, its source electrode is respectively through resistance R 5, R6, R7 ground connection, and grid connects respectively V1, V2, the V3 control port of control module 21KZQ through resistance R 51, R61 and R71;
Described microwave magnitude-balancing circuit 24 connects wire by resistance R 0 and institute and forms, and one end connects input port PORT1, and the other end connects output port PORT2; Described first order microwave attenuation circuit is comprised of field effect transistor T1, resistance R 1 and resistance R 11; Described second level microwave attenuation circuit is comprised of field effect transistor T2, resistance R 2 and resistance R 21; Described third level microwave attenuation circuit is comprised of field effect transistor T3, resistance R 3 and resistance R 31; Described fourth stage microwave attenuation circuit is comprised of field effect transistor T4, resistance R 4 and resistance R 41; After the drain electrode parallel connection of described field effect transistor T1, T2, T3, T4, connect input port PORT1, its source electrode meets output port PORT2 through resistance R 1, R2, R3 and R4 respectively, and grid connects respectively V4, V5, V6 and the V7 port of control module 21KZQ through resistance R 11, R21, R31 and R41;
Described first order output port standing wave regulating circuit is comprised of field effect transistor T111 and T112, resistance R 11 and R111; Described second level output port standing wave regulating circuit is comprised of field effect transistor T10, resistance R 10 and R101; Described third level output port standing wave regulating circuit is comprised of field effect transistor T9, resistance R 9 and R91; Described fourth stage output port standing wave regulating circuit is comprised of field effect transistor T8, resistance R 8 and resistance R 81; The drain electrode of described field effect transistor T11 meets output port PORT2, and its source electrode connects the drain electrode of described field effect transistor T112, and grid is connected the V8 port that meets control module 21KZQ by described resistance R 11 with the grid of described field effect transistor T112; The source electrode of described field effect transistor T112 is through described resistance R 11 ground connection; After the drain electrode parallel connection of described field effect transistor T10, T9, T8, connect output port PORT2, its source electrode is respectively through resistance R 10, R9 and R8 ground connection, and grid connects respectively V3, V2 and the V1 port of control module 21KZQ through resistance R 101, R91, R81.
R11～R111 is taken as 2000 ohm～3000 ohm conventionally.
First to fourth microwave single pole single throw switch 8,10,12,14, the first to the 7th control switch 2,4,6,16,17,19,21 adopt gaas fet to realize.
Port is all normalized to 50 ohm.
The fixed attenuation amount ratio of described first to fourth fixed attenuation unit 9,11,13,15,17 is 1:2:4:8, and the pad value of described microwave magnitude-balancing circuit 24 is 0.5dB.
Described circuit is integrated on the brilliant garden of monolithic.
The control coding of described control module 21KZQ and the relation of attenuation are as shown in the table, wherein A1 is minimal attenuation amount, the first to the 3rd control switch, first to fourth microwave single pole single throw switch, control end corresponding to the 4th to the 7th control switch is respectively V1, V2, V3, V4, V5, V6, V7, V8, V3, V2, V1.
| Attenuation | V1 | V2 | V3 | V4 | V5 | V6 | V7 | V8 |
| 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| A1 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 1 |
| 2*A1 | 1 | 0 | 0 | 1 | 0 | 0 | 0 | 0 |
| 3*A1 | 1 | 0 | 0 | 1 | 0 | 0 | 0 | 1 |
| 4*A1 | 1 | 0 | 0 | 0 | 1 | 0 | 0 | 0 |
| 5*A1 | 1 | 0 | 0 | 0 | 1 | 0 | 0 | 1 |
| 6*A1 | 0 | 1 | 0 | 1 | 1 | 0 | 0 | 0 |
| 7*A1 | 0 | 1 | 0 | 1 | 1 | 0 | 0 | 1 |
| 8*A1 | 0 | 1 | 0 | 0 | 0 | 1 | 0 | 0 |
| 9*A1 | 0 | 1 | 0 | 0 | 0 | 1 | 0 | 1 |
| 10*A1 | 0 | 0 | 1 | 1 | 0 | 1 | 0 | 0 |
| 11*A1 | 0 | 0 | 1 | 1 | 0 | 1 | 0 | 1 |
| 12*A1 | 0 | 0 | 1 | 0 | 1 | 1 | 0 | 0 |
| 13*A1 | 0 | 0 | 1 | 0 | 1 | 1 | 0 | 1 |
| 14*A1 | 1 | 1 | 0 | 1 | 1 | 1 | 0 | 0 |
| 15*A1 | 1 | 1 | 0 | 1 | 1 | 1 | 0 | 1 |
| 16*A1 | 1 | 1 | 0 | 0 | 0 | 0 | 1 | 0 |
| 17*A1 | 1 | 1 | 0 | 0 | 0 | 0 | 1 | 1 |
| 18*A1 | 1 | 0 | 1 | 1 | 0 | 0 | 1 | 0 |
| 19*A1 | 1 | 0 | 1 | 1 | 0 | 0 | 1 | 1 |
| 20*A1 | 1 | 0 | 1 | 0 | 1 | 0 | 1 | 0 |
| 21*A1 | 1 | 0 | 1 | 0 | 1 | 0 | 1 | 1 |
| 22*A1 | 0 | 1 | 1 | 1 | 1 | 0 | 1 | 0 |
| 23*A1 | 0 | 1 | 1 | 1 | 1 | 0 | 1 | 1 |
| 24*A1 | 0 | 1 | 1 | 0 | 0 | 1 | 1 | 0 |
| 25*A1 | 0 | 1 | 1 | 0 | 0 | 1 | 1 | 1 |
| 26*A1 | 0 | 1 | 1 | 1 | 0 | 1 | 1 | 0 |
| 27*A1 | 0 | 1 | 1 | 1 | 0 | 1 | 1 | 1 |
| 28*A1 | 1 | 1 | 1 | 0 | 1 | 1 | 1 | 0 |
| 29*A1 | 1 | 1 | 1 | 0 | 1 | 1 | 1 | 1 |
| 30*A1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 0 |
| 31*A1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Three grades of standing wave regulating circuits that microwave signal is passed through input port standing wave adjustment module successively, carry out the adjusting of input port standing wave; So be divided into five tunnel microwave signals and enter respectively Pyatyi microwave attenuation circuit and the microwave magnitude-balancing circuit 24 of microwave attenuation module, realize the decay of signal; Finally gather and enter output port standing wave adjustment module, pass through successively the level Four standing wave regulating circuit in output port standing wave adjustment module, carry out after output port standing wave regulates exporting.
Suppose that incident power is p1 (unit: watt), be divided into five tunnels, enter respectively level Four microwave attenuation circuit and microwave magnitude-balancing circuit 24.Suppose that proportion is a1, a2, a3, a4, a5, a1*p1 so, a2*p1, a3*p1, a4*p1, a5*p1 is respectively the signal power being about to by level Four microwave attenuation circuit and microwave magnitude-balancing circuit 24.In side circuit, due to the intrinsic attenuation attributes of attenuator circuit, cause it all not pass through, suppose that its percent of pass is respectively b1, b2, b3, b4, b5, if five tunnels all do not form signal reflex so, under the signal power perfect condition of passing through is so:
a1*b1*p1,a2*b2*p1,a3*b3*p1,a4*b4*p1,a5*b5*p1。
After final output, gathering the power obtaining is:
a1*b1*p1+a2*b2*p1+a3*b3*p1+a4*b4*p1+a5*b5*p1。
Signal is because the loss of signal that each road natural attenuation characteristic causes is:
p1-?(a1*b1*p1+a2*b2*p1+a3*b3*p1+a4*b4*p1+a5*b5*p1)
=p1*(1-a1*b1-a2*b2-a3*b3-a4*b4-a5*b5)。
The intrinsic insertion loss of this attenuator that namely microwave attenuation module causes.This part loss is conventionally far below the insertion loss of traditional attenuator so.
When microwave single pole single throw switch disconnects, microwave signal is reflected by microwave single pole single throw switch after by attenuator circuit, and reflected wave is transfused to port adjustment module circuit and absorbs and do not enter line output port standing wave adjustment module; When microwave single pole single throw switch is closed, microwave signal is by attenuator circuit unit, although signal is attenuated, attenuation is little.When all microwave single pole single throw switch short circuits, realize the minimal attenuation to signal; When disconnecting, realize all microwave single pole single throw switch the maximum attenuation to signal.
When the whole reflex times of signal of all branch roads, during maximum attenuation, percent of pass b1=b2=b3=b4=0, so loss of signal is whole power p1-a5*b5*p1.
If the attenuation of five attenuators that require is respectively: A1, A2, A3, A4, A5, has so: A5=2*A4=4*A3=8*A2=16*A1, also cascade attenuator circuit calculates respectively with a level cascade attenuator circuit, so:
10*log(a2+a3+a4+a5)=-abs(A2),
10*log(a3+a4+a5)=A2=-abs(2*A2),
10*log(a2+a4+a5)=A3=-abs(4*A2),
10*log(a1+a5)=A4=-abs(8*A2),
10*log(a5)=A1+A2+A3+A4=-abs(15*A2),
When A2=1, can push away to obtain a1=0.13, a2=0.16, a3=0.39, a4=0.21, a5=0.03, the ratio that is to say the resistance of four tunnels decay in parallel branch road when opening is respectively 13:16:39:21. in actual conditions, and control switch and microwave single pole single throw switch are non-ideal switches, under opening state, there is spurious impedance Zon, under off state, have spurious impedance Zoff.The impedance of opening or turn-off of supposing described field effect transistor T1～T4 is respectively Zon1, Zoff1, Zon2, Zoff2, Zon3, Zoff3, Zon4, Zoff4, unified with Z1～Z4, represent, the impedance of microwave amplitude balance module is Zp=R0, and whether the impedance of input port standing wave adjustment module, output port standing wave adjustment module is respectively Z5～Z7(and defines impedance and be respectively Zon5 according to opening, Zoff5, Zon6, Zoff6, Zon7, Zoff7, symmetrical and whether impedance is extended for to Z8～Z10 according to whether).There is (Zon1+R1): (Zon2+R2): (Zon3+R3): (Zon4+R4)=13:16:39:21, the following computing formula of simultaneous is determined each component value so again:
During Insertion Loss state, attenuation is 0 o'clock:
A1=20*log (Zx1* Zy1+50* Zx1+50* Zy1)/(50* Zy1), Zy1=Zoff5 ∥ Zoff6 ∥ Zoff7 wherein, Zx1=Zon1 ∥ Zon2 ∥ Zon3 ∥ Zon4 ∥ Zp;
During the state that decays arbitrarily:
A2=20*log (Zx2* Zy2+50* Zx2+50* Zy2)/(50* Zy2), Zy2=Z5 ∥ Z6 ∥ Z7 wherein, Zx1=Z1 ∥ Z2 ∥ Z3 ∥ Z4 ∥ Zp, and only need be according to coding requirement by Z1～Z7` on behalf of corresponding Zon or Zoff.
The computing formula of attenuation is: At=A2-A1
Due to voltage standing wave ratio requirement, also must meet following formula simultaneously:
50=?Zy1*(Zx1*Zy1+50*Zx1+50*Zy1)/((50+Zy1)*(Zy1+Zx1)+50*Zy1)
50=?Zx2*(Zy2*Zx2+50*Zy2+50*Zx2)/((50+Zx2)*(Zx2+Zy2)+50*Zx2)
According to four attenuators attenuation of totally 16 states, and the standing wave state of totally 16 states, can obtain 32 equations, in addition the corresponding proportionate relationship (3 variablees can disappear) between four attenuation module before, can determine three control switchs (6 variable: Zon5 completely, Zoff5, Zon6, Zoff6, Zon7, Zoff7), four attenuation units (4 variable: R1, R2, R3, R4), four microwave single pole single throw switch (8 variable: Zon1, Zoff1, Zon2, Zoff2, Zon3, Zoff3, Zon4, Zoff4), 24(1 variable of a microwave magnitude-balancing circuit: R0), three standing wave regulating circuit unit (3 variable: R5, R6, R7), be total to (22-3=19) individual variable.
And form the field effect transistor T111 of level cascade attenuator circuit, and T112 is identical, and the corresponding impedance of opening or turn-off is respectively Zon11, Zoff11, according to computing formula:
A1=?20*log[(2*Zoff11+R11)∥50]
=?20*log（(2*Zoff11+R11)*50/(2*Zoff11+R11+50)）
A2=?20*log[(2*Zon11+R11)∥50]
=?20*log（(2*Zon11+R11)*50/(2*Zon11+R11+50)）
And A2-A1=0.5 meets voltage standing wave ratio condition simultaneously:
50=(2*Zoff11+R11)*50/(2*Zoff11+R11+50)
50=(2*Zon11+R11)*50/(2*Zon11+R11+50)
Simultaneously according to insertion loss condition: A1=20*log[(2*Zoff11+R11) ∥ 50]
=20*log((2*Zoff11+R11) * 50/ (2*Zoff11+R11+50)) must be less than certain required value;
Four equations can be determined Zoff11, Zon11, the relation of R11.Obviously the solution meeting the demands is many groups.
Claims (5)
1. five nonreciprocal microwave monolithic integrated attenuators of Programmable and Variable, is characterized in that: input port standing wave adjustment module, microwave attenuation module, output port standing wave adjustment module and control module (21), consist of; Described input port standing wave adjustment module and output port standing wave adjustment module are asymmetric;
Described input port standing wave adjustment module forms to the cascade of third level input port standing wave regulating circuit by first; Described first is identical to third level input port standing wave regulating circuit structure, and wherein first order input port standing wave regulating circuit is in series by first order input port standing wave regulating circuit unit (1) and the first control switch (2);
Described microwave attenuation module is composed in parallel by first order microwave attenuation circuit, second level microwave attenuation circuit, third level microwave attenuation circuit, fourth stage microwave attenuation circuit and microwave magnitude-balancing circuit (24); Described first to fourth grade of microwave attenuation circuit structure is identical, and wherein first order microwave attenuation circuit is composed in series by the first fixed attenuation unit (7) and the first microwave single pole single throw switch (8);
Described output port standing wave adjustment module is comprised of the cascade of first to fourth grade of output port standing wave regulating circuit; Described first order output port standing wave regulating circuit is formed in parallel by the 4th standing wave regulating circuit unit (22) and the 4th control switch (23), described second is identical to fourth stage output port standing wave regulating circuit structure, and wherein second level output port standing wave regulating circuit is in series by the 5th standing wave regulating circuit unit (15) and the 5th control switch (16);
First to the control switch of third level input port standing wave regulating circuit, the microwave single pole single throw switch of first to fourth grade of microwave attenuation circuit be connected with the corresponding control output end of control module (21) respectively.
2. five nonreciprocal microwave monolithic integrated attenuators of Programmable and Variable according to claim 1, is characterized in that: described first order input port standing wave regulating circuit unit is comprised of field effect transistor T5, resistance R 5 and resistance R 51; The input port standing wave regulating circuit unit of second level input port standing wave regulating circuit is comprised of field effect transistor T6, resistance R 6 and resistance R 61; The input port standing wave regulating circuit unit of third level input port standing wave regulating circuit is comprised of field effect transistor T7, resistance R 7 and resistance R 71; After the drain electrode parallel connection of described field effect transistor T5, T6 and T7, be connected with signal input port PORT1, its source electrode is respectively through resistance R 5, R6, R7 ground connection, and grid connects respectively V1, V2, the V3 control port of control module (21) through resistance R 51, R61 and R71;
Described microwave magnitude-balancing circuit (24) connects wire by resistance R 0 and institute and forms, and one end connects input port PORT1, and the other end connects output port PORT2; Described first order microwave attenuation circuit is comprised of field effect transistor T1, resistance R 1 and resistance R 11; Described second level microwave attenuation circuit is comprised of field effect transistor T2, resistance R 2 and resistance R 21; Described third level microwave attenuation circuit is comprised of field effect transistor T3, resistance R 3 and resistance R 31; Described fourth stage microwave attenuation circuit is comprised of field effect transistor T4, resistance R 4 and resistance R 41; After the drain electrode parallel connection of described field effect transistor T1, T2, T3, T4, connect input port PORT1, its source electrode meets output port PORT2 through resistance R 1, R2, R3 and R4 respectively, and grid connects respectively V4, V5, V6 and the V7 port of control module through resistance R 11, R21, R31 and R41;
Described first order output port standing wave regulating circuit is comprised of field effect transistor T111 and T112, resistance R 11 and R111; Described second level output port standing wave regulating circuit is comprised of field effect transistor T10, resistance R 10 and R101; Described third level output port standing wave regulating circuit is comprised of field effect transistor T9, resistance R 9 and R91; Described fourth stage output port standing wave regulating circuit is comprised of field effect transistor T8, resistance R 8 and resistance R 81; The drain electrode of described field effect transistor T111 meets output port PORT2, and its source electrode connects the drain electrode of described field effect transistor T112, and grid is connected the V8 port that connects control module by described resistance R 111 with the grid of described field effect transistor T112; The source electrode of described field effect transistor T112 is through described resistance R 11 ground connection;
After the drain electrode parallel connection of described field effect transistor T10, T9, T8, connect output port PORT2, its source electrode is respectively through resistance R 10, R9 and R8 ground connection, and grid connects respectively V3, V2 and the V1 port of control module through resistance R 101, R91, R81.
3. five nonreciprocal microwave monolithic integrated attenuators of Programmable and Variable according to claim 1, is characterized in that: first to fourth microwave single pole single throw switch, the first to the 7th control switch adopt gaas fet to realize.
4. five nonreciprocal microwave monolithic integrated attenuators of Programmable and Variable according to claim 1, is characterized in that: port is all normalized to 50 ohm.
5. five nonreciprocal microwave monolithic integrated attenuators of Programmable and Variable according to claim 1, it is characterized in that: the fixed attenuation amount ratio of the fixed attenuation unit of first to fourth grade of microwave attenuation circuit is 1:2:4:8, and the pad value of described microwave magnitude-balancing circuit (24) is 0.5dB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110169477.9A CN102291097B (en) | 2011-06-22 | 2011-06-22 | Program-controlled variable five-bit nonreciprocal microwave monolithic integrated attenuator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110169477.9A CN102291097B (en) | 2011-06-22 | 2011-06-22 | Program-controlled variable five-bit nonreciprocal microwave monolithic integrated attenuator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102291097A CN102291097A (en) | 2011-12-21 |
| CN102291097B true CN102291097B (en) | 2014-02-19 |
Family
ID=45337248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110169477.9A Expired - Fee Related CN102291097B (en) | 2011-06-22 | 2011-06-22 | Program-controlled variable five-bit nonreciprocal microwave monolithic integrated attenuator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102291097B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111865266A (en) * | 2020-07-23 | 2020-10-30 | 慧讯圆成电子科技(南通)有限公司 | Adjustable step attenuation device and electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5101507A (en) * | 1989-04-26 | 1992-03-31 | Samsung Electronics Co., Ltd. | Radio-frequency power level control circuit of mobile radio telephone |
| CN201467081U (en) * | 2009-07-31 | 2010-05-12 | 成都亚光电子股份有限公司 | High-precision digitally controlled attenuator for X bands |
-
2011
- 2011-06-22 CN CN201110169477.9A patent/CN102291097B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5101507A (en) * | 1989-04-26 | 1992-03-31 | Samsung Electronics Co., Ltd. | Radio-frequency power level control circuit of mobile radio telephone |
| CN201467081U (en) * | 2009-07-31 | 2010-05-12 | 成都亚光电子股份有限公司 | High-precision digitally controlled attenuator for X bands |
Non-Patent Citations (4)
| Title |
|---|
| Broadband, Low-Loss 5- and 6-Bit Digital Attenuators;Dave Krafcsik等;《Microwave Symposium Digest, 1995., IEEE MTT-S International》;19950520;第3卷;第1627-1630页 * |
| Dave Krafcsik等.Broadband, Low-Loss 5- and 6-Bit Digital Attenuators.《Microwave Symposium Digest, 1995., IEEE MTT-S International》.1995,第3卷第1627-1630页. |
| 一种新颖的4bit和5bit超宽带GaAs单片数字衰减器;王会智等;《半导体学报》;20050308;第26卷(第3期);第585-589页 * |
| 王会智等.一种新颖的4bit和5bit超宽带GaAs单片数字衰减器.《半导体学报》.2005,第26卷(第3期),第585-589页. |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102291097A (en) | 2011-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103427781B (en) | Silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator | |
| CN110380708B (en) | Ultra-wideband amplitude-phase compensation digital switch attenuator circuit | |
| CN107707218A (en) | The embedded five-digit number control attenuator of switch based on low-pass filter network | |
| CN108111155B (en) | Radio frequency switch circuit for improving nonlinearity | |
| CN103684332B (en) | Distributed type adjustable negative group time-delay circuit | |
| CN110855266A (en) | Single-voltage positive-voltage driven single-chip numerical control attenuator chip | |
| US10141926B2 (en) | Ultra-low power cross-point electronic switch apparatus and method | |
| CN111865244B (en) | Digital control variable gain amplifier | |
| CN111953311B (en) | Attenuator circuit and radio frequency front end architecture | |
| CN102394590B (en) | Program-controlled variable 5-bit reciprocal microwave monolithic integrated attenuator | |
| CN102455732B (en) | Improve the circuit of multichannel big current matching degree | |
| US7786822B2 (en) | Four-state digital attenuator having two-bit control interface | |
| CN102291097B (en) | Program-controlled variable five-bit nonreciprocal microwave monolithic integrated attenuator | |
| KR20100049002A (en) | Switching device with selectable phase shifting modes for reduced intermodulation distortion | |
| US20140361847A1 (en) | Low loss multiple output switch with integrated distributed attenuation | |
| CN207766238U (en) | 6 attenuators of DC-20GHz | |
| CN102355219B (en) | Program-controlled variable four-digit microwave one-chip integrated attenuator | |
| CN113437948A (en) | Switch type low-additional phase-shift digital step attenuator of all NMOS transistor | |
| CN115955214B (en) | Circuit and method for eliminating switching overshoot of attenuator | |
| CN106911327A (en) | Difference transceiving radio frequency is switched and rf terminal | |
| CN115913173B (en) | Attenuator and method for eliminating switching overshoot | |
| CN117595851A (en) | A broadband five-pole five-throw switch chip | |
| CN216904832U (en) | Attenuator | |
| CN207184435U (en) | A kind of C-band numerical-control attenuator | |
| CN212518947U (en) | High-isolation low-insertion-loss switch circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140219 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |